Togashi Rie 富樫理恵

… Alternative Names

TOGASHI Rie 富樫理恵

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Researcher Number	50444112
Other IDs
Affiliation (Current)	2025: 上智大学, 理工学部, 准教授
Affiliation (based on the past Project Information) *help	2024: 上智大学, 理工学部, 准教授 2022: 上智大学, 理工学部, 准教授 2018 – 2022: 上智大学, 理工学部, 助教 2015 – 2017: 東京農工大学, 工学(系)研究科(研究院), 助教 2011 – 2013: 東京農工大学, 工学(系)研究科(研究院), 助教
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Medium-sized Section 30:Applied physics and engineering and related fields / Basic Section 30010:Crystal engineering-related / Science and Engineering / Crystal engineering
Keywords	Principal Investigator 熱力学解析 / 気相成長 / 酸化ガリウム / エピタキシャル成長 / 結晶成長 / エピタキシャル / 酸化インジウム半導体結晶 / 酸化ガリウム半導体結晶 / β型酸化ガリウム / HVPE法 … More / ワイドギャップ半導体 / ハライド気相成長 / 結晶工学 / HVPE / 窒化インジウム … More Except Principal Investigator InGaN / ナノコラム / 量子構造 / 薄膜 / 赤色発光 / 気相法 / 高純度 / 熱力学計算 / OVPE / 酸化ガリウム / レーザ / LED / 三原色集積型光デバイス / 拡張熱力学解析 / 相整合混晶 / 相混在面 / 反応解析 / 相混在 / バンドエンジニアリング / 格子引き込み / 混晶成長 / 発現相制御 / 非熱平衡 / 熱平衡 / Ⅲ族セスキ酸化物半導体 / ハライド気相成長法 / ミスト化学気相堆積法 / 非熱平衡成長 / 熱平衡成長 / 準安定相 / 安定相 / Ⅲ族セスキ酸化物半導体結晶 / PVT法 / 導電性制御 / バルク結晶 / エピタキシャル成長 / 結晶工学 / エッチピット / 転位 / Siドーピング / ショットキーバリアダイオード / HVPE法 / ドーピング / 不純物 / n形導電性 / 点欠陥 / 窒化アルミニウム Less

赤色発光素子応用に資するInGaNマトリクスの構造制御
- Principal Investigator
  
  山口智広
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Kogakuin University
水ガスを用いた原料分子種生成制御反応の解明による高品質酸化インジウム結晶の創出Principal Investigator
- Principal Investigator
  
  富樫理恵
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Sophia University
Growth technique of High quality gallium oxide crystal by toxic gas-free OVPE method
- Principal Investigator
  
  Imanishi Masayuki
- Project Period (FY)
  2021 – 2022
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Osaka University
Generation of high-purity gallium oxide semiconductor crystals by studying the formation mechanism of new source material speciesPrincipal Investigator
- Principal Investigator
  
  Togashi Rie
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Sophia University
Innovation of Three Primary Colors Emitting Devices by Nanocolumn Crystals
- Principal Investigator
  
  KISHINO Katsumi
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Sophia University
Investigation of the effect of hydrogen on gallium oxide growth by comparison of growth using completely non-hydrogen system and hydrogen systemPrincipal Investigator
- Principal Investigator
  
  Togashi Rie
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Sophia University
  Tokyo University of Agriculture and Technology
Bottom up creation of singularities by utilization of equilibrium and non-equilibrium crystal growth from vapor phase
- Principal Investigator
  
  Kumagai Yoshinao
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Realization of n-type AlN by clarifying the mechanism of point defect formation in bulk AlN crystal
- Principal Investigator
  
  Kumagai Yoshinao
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Investigation of Preferential Source Generation Mechanism for the Realization of Bulk Crystal Growth of Indium NitridePrincipal Investigator
- Principal Investigator
  
  TOGASHI Rie
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology

All 2022 2021 2020 2019 2018 2017 2016 2015 2013 2012 2011 Other

All Journal Article Presentation

[Journal Article] Photonic band characterization in InGaN/GaN nanocolumn arrays with triangular and honeycomb lattices by angle-resolved micro-photoluminescence measurements2021
- Author(s)
  T. Oto, M. Okamura, Y. Matsui, K. Motoyama, S. Ishizawa, R. Togashi and K. Kishino
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 60 Issue: 6 Pages: 060904-060904
- DOI
  10.35848/1347-4065/abfeaa
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00874, KAKENHI-PROJECT-21K14483
[Journal Article] Comparison of surface plasmon polariton characteristics of Ag- and Au-based InGaN/GaN nanocolumn plasmonic crystals2021
- Author(s)
  Takao Oto, Masato Namazuta, Shotaro Hayakawa, Koichi Okamoto, Rie Togashi and Katsumi Kishino
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 14 Issue: 10 Pages: 105002-105002
- DOI
  10.35848/1882-0786/ac2632
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H05627, KAKENHI-PROJECT-19H00874, KAKENHI-PROJECT-21K14483
[Journal Article] Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0001) substrates2021
- Author(s)
  Hidetoshi Nakahata, Rie Togashi, Ken Goto, Bo Monemar, Yoshinao Kumagai
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 563 Pages: 1261111-6
- DOI
  10.1016/j.jcrysgro.2021.126111
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Journal Article] Comparison of O2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy2018
- Author(s)
  Keita Konishi, Ken Goto, Rie Togashi, Hisashi Murakami, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Yoshinao Kumagai
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 492 Pages: 39-44
- DOI
  10.1016/j.jcrysgro.2018.04.009
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PROJECT-16K04944
[Journal Article] High rate growth of In2O3 at 1000℃ by halide vapor phase epitaxy2016
- Author(s)
  R. Togashi, S. Numata, M. Hayashida, T. Suga, K. Goto, A. Kuramata, S. Yamakoshi, P. Paskov, B. Monemar, and Y. Kumagai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1202B3-1202B3
- DOI
  10.7567/jjap.55.1202b3
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PROJECT-16K04944
[Journal Article] Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H22016
- Author(s)
  R. Togashi, Y. Kisanuki, K. Goto, H. Murakami, A. Kuramata, S. Yamakoshi, B. Monemar, A. Koukitu, and Y. Kumagai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1202BE-1202BE
- DOI
  10.7567/jjap.55.1202be
- NAID
  210000147274
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PROJECT-16K04944
[Journal Article] Influence of high-temperature processing on the surface properties of bulk AlN substrates2016
- Author(s)
  S. Tojo, R. Yamamoto, R. Tanaka, Q.-T. Thieu, R. Togashi, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, H. Murakami, R. Collazo, A. Koukitu, B. Monemar, Z. Sitar, Y. Kumagai
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 446 Pages: 33-38
- DOI
  10.1016/j.jcrysgro.2016.04.030
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555, KAKENHI-PROJECT-26790043, KAKENHI-PROJECT-16K04945
[Journal Article] Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy2015
- Author(s)
  T. Kinoshita, T. Nagashima, T. Obata, S. Takashima, R. Yamamoto, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, and Z. Sitar
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 6 Pages: 0610031-3
- DOI
  10.7567/apex.8.061003
- NAID
  210000137521
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Journal Article] Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates2013
- Author(s)
  Rie Togashi, Sho Yamamoto, K. Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz, and Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52
- NAID
  210000142640
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760006
[Journal Article] Effect of High NH_3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates2013
- Author(s)
  Rie Togashi, Sho Yamamoto, K. Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz, and Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol. 52
- URL
  http://jjap.jsap.jp/cgi-bin/getarticle?magazine=JJAP&volume=52&page=08JD05
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] OVPE法によるβ相酸化ガリウム結晶のエピタキシャル成長2022
- Author(s)
  今西正幸, 細川敬介, 奥村加奈子, 宇佐美茂佳, 富樫理恵, 湊雅彦, 森勇介
- Organizer
  第51回結晶成長国内会議（JCCG-51）
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] 赤色発光MQWｓを有するＩｎＧａＮ系ナノコラムにおけるＡｌＧａＮ小壁装のＡｌ組成非依存性2022
- Author(s)
  山田順平、本田達也、水野愛、富樫理恵、野村一郎、山口智広、本田徹、岸野克巳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] InGaNナノコラムプラズモニック結晶における発光増強ダイナミクス2022
- Author(s)
  大音隆男, 菊地主馬, 岡本晃一, 富樫理恵, 岸野克巳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] OVPE法によるサファイア及びGa2O3基板上β-Ga2O3結晶成長2022
- Author(s)
  今西正幸, 小林大也, 奥村加奈子, 細川敬介, 宇佐美茂佳, 富樫理恵, 秦雅彦, 森勇介
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] Ga2O, H2O原料ガスを用いた高温・高速酸化ガリウム成長の熱力学的検討2022
- Author(s)
  富樫理恵，鈴木明香里，石田遥夏, 宇佐美茂佳,今西正幸，秦雅彦，森勇介
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] OVPE法によるサファイア及びGa2O3基板上β-Ga2O3結晶成長2022
- Author(s)
  今西正幸, 小林大也, 奥村加奈子, 細川敬介, 宇佐美茂佳, 富樫理恵, 秦雅彦, 森勇介
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] InGaNナノコラムプラズモニック結晶の構造設計と赤色発光の高効率化2021
- Author(s)
  大音隆男、岡本晃一、富樫理恵、岸野克巳
- Organizer
  第2回半導体ナノフォトニクス研究会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Ga2O, H2O原料ガスを用いたβ型酸化ガリウム成長の熱力学解析2021
- Author(s)
  富樫理恵，鈴木明香里，石田　遥夏, 今西正幸，秦雅彦，森勇介
- Organizer
  第2回半導体ナノフォトニクス研究会
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] 下地コラムトップ角度によるInGaN/GaN ナノコラムの発光スペクトル制御2021
- Author(s)
  吉村賢哉、高橋昂司、滝本啓司、本田達也、山田純平、富樫理恵、野村一郎、岸野克巳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Mechanism of red emission enhancement in InGaN nanocolumn plasmonic crystals with honeycomb lattice2021
- Author(s)
  T. Oto, A. Aihara, K. Okamoto, R. Togashi, K. Kishino
- Organizer
  8th Asian Conference on Crystal Growth and Crystal Technology,
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] InGaN ナノコラムアレイにおいてコラムの分割が発光特性に与える影響2021
- Author(s)
  宮崎聡太郎、浅井佑太、松井祐三、富樫理恵、岸野克巳、大音隆男
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] ナノコラムのクラスタ配列化による発光強度増大と偏光制御2021
- Author(s)
  宮崎聡太郎、浅井佑太、松井祐三、富樫理恵、岸野克巳、大音隆男
- Organizer
  応用物理学会東北支部第76回学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Growth of stable and/or metastable phases of Ga2O3 and In2O3 by halide vapor phase epitaxy and mist chemical vapor deposition2021
- Author(s)
  Yoshinao Kumagai, Ken Goto, Rie Togashi, Tomohiro Yamaguchi, Hisashi Murakami
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 酸化物半導体結晶Ga2O3およびIn2O3の準安定相発現機構の検討2021
- Author(s)
  熊谷義直，後藤健，富樫理恵，山口智広，村上尚
- Organizer
  第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] nGaN系ナノコラムの形状制御とその発光特性2021
- Author(s)
  山田純平、本田達也、水野愛、富樫理恵、野村一郎、岸野克巳
- Organizer
  第2回半導体ナノフォトニクス研究会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] ナノコラムプラズモニック結晶を用いたプラズモン共鳴波長制御と発光増強特性2021
- Author(s)
  大音隆男，鯰田優人，早川将太朗，岡本晃一，富樫理恵，岸野克巳
- Organizer
  第17回プラズモニクスシンポジウム
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Agプラズモニック結晶の導入がInGaN系ナノコラムアレイのバンド構造に与える影響2021
- Author(s)
  早川将太朗、岡本晃一、富樫理恵、岸野克巳、大音隆男
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] GaN系ナノコラムにおけるn-GaN平坦層がInGaN/AlGaN MQWs発光層に与える影響2021
- Author(s)
  山田純平、本田達也、吉田圭吾、富樫理恵、野村一郎、山口智広、本田徹、岸野克巳
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] InGaNナノコラムプラズモニック結晶の構造設計と赤色発光の高効率化2021
- Author(s)
  大音隆男、岡本晃一、富樫理恵、岸野克巳
- Organizer
  ワイドギャップ半導体学会第4回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Thermodynamic study of etching characteristics of HVPE-grown In2O3 layers by hydrogen-environment anisotropic thermal etching2021
- Author(s)
  Rie Togashi, Ryo Kasaba, Yuki Ooe, Ken Goto, Yoshinao Kumagai, Akihiko Kikuchi
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] (0001)および（10-11）面InGaN/GaNナノコラム上InGaN/AlGaN MQWsの発光特性2021
- Author(s)
  山田純平、本田達也、水野愛、富樫理恵、野村一郎、山口智広、本田徹、岸野克巳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Fabrication process of GaInN/GaN honeycomb array nanocolumn LEDs for integration of surface plasmonic resonance scheme2020
- Author(s)
  Akihiro Ueno, Gyo Imamura, Keigo Yoshida, Keiji Takimoto, Ichirou Nomura, Rie Togashi, Tomohiro Yamaguchi, Tohru Honda, Katsumi Kishino
- Organizer
  8th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] 水素雰囲気異方性熱エッチング(HEATE)法によるHVPE-In2O3成長層のエッチング特性評価2020
- Author(s)
  富樫理恵，笠羽遼，大江優輝，長井研太，後藤健，熊谷義直，菊池昭彦
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 低充填率と高充填率InGaN/GaN規則配列ナノコラムにおける発光色変化メカニズムの比較検討2020
- Author(s)
  吉村賢哉、滝本啓司、成田一貴、富樫理恵、野村一郎、岸野克巳
- Organizer
  第３回結晶工学×ISYSE合同研究会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] 水素雰囲気異方性熱エッチング(HEATE)法によるHVPE-In2O3成長層のエッチング特性の熱力学的検討2020
- Author(s)
  富樫理恵，笠羽遼，大江優輝，後藤健，熊谷義直，菊池昭彦
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Halide Vapor Phase Epitaxy of Group-III Sesquioxides2020
- Author(s)
  Yoshinao Kumagai, Ken Goto, Rie Togashi, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki
- Organizer
  2020 Virtual MRS Spring Meeting & Exhibit
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] GaInN/GaN規則配列ナノコラム結晶における活性層の構造と光学特性の関係2020
- Author(s)
  吉田圭吾、滝本啓司、富樫理恵、野村一郎、山口智広、尾沼猛儀、本田徹、岸野克巳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] ナノコラムプラズモニック結晶を用いた赤色発光増強技術2020
- Author(s)
  大音隆男, 岡本晃一, 富樫理恵, 岸野克巳
- Organizer
  Sophia Open Research Weeks 半導体ナノフォトニクス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] 特異格子配列InGaNナノコラムプラズモニック結晶における赤色発光増強メカニズム2020
- Author(s)
  相原碧人, 岡本晃一, 富樫理恵, 岸野克巳, 大音隆男
- Organizer
  応用物理学東北支部第75回学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] 水素雰囲気異方性熱エッチング (HEATE)法による HVPE-In2O3成長層のエッチング特性評価2020
- Author(s)
  富樫理恵，笠羽遼，大江優輝，後藤健，熊谷義直，菊池昭彦
- Organizer
  Sophia Open Research Weeks 2020半導体ナノフォトニクス研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] InGaN/GaNナノコラムプラズモニック結晶における発光増強特性～金と銀の比較～2020
- Author(s)
  大音隆男, 鯰田優人, 岡本晃一, 富樫理恵, 岸野克巳
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] InGaN 系ナノコラム側面への金ナノ構造導入による発光増強2020
- Author(s)
  大井川道崇, 岡本晃一, 富樫理恵, 岸野克巳, 大音隆男
- Organizer
  応用物理学東北支部第75回学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] I nGaN/GaNハニカム構造ナノコラム結晶の成長と評価2019
- Author(s)
  吉田圭吾, 今村暁, 滝本啓司, 富樫理恵, 山口智広, 尾沼猛儀, 本田徹, 岸野克巳
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Investigation of etching characteristics of HVPE-grown In2O3 layers by hydrogen-environment anisotropic thermal etching2019
- Author(s)
  R. Kasaba, Y. Ooe, K. Nagai, K. Goto, R. Togashi, A. Kikuchi, and Y. Kumagai
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15457
[Presentation] In2O3及びGa2O3のHVPE成長におけるIII族原料の熱力学的比較2019
- Author(s)
  田中那実，税本雄也，長井研太，富樫理恵，竹川直，後藤健，熊谷義直
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Ga源にGaCl3又はGaClを用いるGa2O3 HVPE成長の熱力学解析2019
- Author(s)
  加茂崇，三浦遼，竹川直，富樫理恵，後藤健，熊谷義直
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Investigation of Thermal and Chemical Stabilities of (001), (010), and (-201) β-Ga2O3 substrates in a flow of either N2 or H22019
- Author(s)
  R. Togashi, S. Yamanobe, K. Goto, H. Murakami, S. Yamakoshi, and Y. Kumagai
- Organizer
  The 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15457
[Presentation] 水素・窒素気流中におけるβ-Ga2O3(001)，(010)，(-201)基板の熱的・化学的安定性の検討2019
- Author(s)
  富樫理恵，山野邉咲子，後藤健，村上尚，山腰茂伸，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-19K15457
[Presentation] InGaN/GaN Honeycomb Lattice Nanocolumun LEDs2019
- Author(s)
  G. Imamura, K. Yoshida, A. Ueno, R. Togashi, T. Yamaguchi, T. Honda and K. Kishino
- Organizer
  2019 Materials Research Society (MRS) Fall Meeting & Exhibit (2019MRS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Red Emitting InGaN-based Ordered Nanocolumns Exhibiting Photonic Crystal Effects at 671 nm2019
- Author(s)
  K. Takimoto, K. Narita, K. Yoshida, T. Oto, T. Yamaguchi, T. Honda, T. Onuma, R. Togashi, I. Nomura and K. Kishino
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Fabrication of nanocolumn photonic crystal (NC-PC) structure with enhanced optical confinement by controlling NC diameter2019
- Author(s)
  D. Hatakeyama, Y. Matsui, R. Togashi and K. Kishino
- Organizer
  Nanowire Week 2019 （NWW2019）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] HVPE法で成長したサファイア基板上In2O3単結晶薄膜の電気伝導特性2019
- Author(s)
  後藤健，長井研太，税本雄也，田中那実，竹川直，富樫理恵，熊谷義直
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] III-N Nanocolumn Visible LEDs2019
- Author(s)
  K. Kishino, K. Narita, A. Yanagihara, D. Hatakeyama, K. Takimoto, N. Sakakibara, T. Oto and R. Togashi
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS 13)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Surface Plasmon Coupling around Lateral Interface toward InGaN Nanocolumn Based Plasmonic LEDs with High Efficiencies2019
- Author(s)
  M. Oigawa, K. Okamoto, R. Togashi, K. Kishino and T. Oto
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Thermodynamic study on halide vapor phase epitaxy of Ga2O3 using GaCl or GaCl3 as a group-III precursor2019
- Author(s)
  T. Kamo, R. Miura, N. Takekawa, R. Togashi, K. Goto, and Y. Kumagai
- Organizer
  2019 International Workshop on Gallium Oxide and Other Related Materials (IWGO 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Study on halide vapor phase epitaxy growth of twin-free cubic-indium oxide and its carrier properties2019
- Author(s)
  Ken Goto, Kenta Nagai, Yuya Saimoto, Nami Tanaka, Nao Takekawa, Rie Togashi, and Yoshinao Kumagai
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 規則配列InGaNナノコラムを用いた赤色域発光結晶2019
- Author(s)
  滝本啓司、成田一貴、吉田圭吾、大音隆男、山口智広、本田徹、尾沼猛儀、富樫理恵、野村一郎、岸野克巳
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル分科会「第11回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Influence of substrate constraint on the emergence of metastable α-Ga2O32019
- Author(s)
  Chika Ohashi, Takashi Kamo, Ryo Miura, Nao Takekawa, Rie Togashi, Ken Goto, and Yoshinao Kumagai
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] ハニカム・カゴメ格子配列ナノコラムプラズモニック結晶を用いたInGaN からの赤色発光増強2019
- Author(s)
  相原碧人, 菊地主馬，岡本晃一，富樫理恵，岸野克巳，大音隆男
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] β-Ga2O3(001), (010), (-201)基板の熱的・化学的安定性の面方位依存性2019
- Author(s)
  富樫理恵，山野邉咲子，後藤健，村上尚，山腰茂伸，熊谷義直
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] AlNバッファ層Si基板上のInGaN/GaNナノコラム成長2019
- Author(s)
  十河康治、山野晃司、野村一郎、富樫理恵、岸野克巳
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] 高効率プラズモニックLEDに向けたナノコラム側面での表面プラズモン結合に関する検討2019
- Author(s)
  大井川道崇，岡本晃一，富樫理恵，岸野克巳，大音隆男
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Comparison of thermodynamics on growth of In2O3 and Ga2O3 by halide vapor phase epitaxy using mono- and tri-halides2019
- Author(s)
  Nami Tanaka, Yuya Saimoto, Kenta Nagai, Rie Togashi, Nao Takekawa, Ken Goto, and Yoshinao Kumagai
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] ハニカム格子ナノコラムプラズモニック結晶を用いたInGaNからの赤色発光増強2019
- Author(s)
  相原碧人, 菊地主馬，岡本晃一，富樫理恵，岸野克巳，大音隆男
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル分科会「第11回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] GaCl及びGaCl3をGa源とするGa2O3 HVPE成長の熱力学解析2019
- Author(s)
  加茂崇，三浦遼，竹川直，富樫理恵，後藤健，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] β-Ga2O3(001), (010), (-201)基板の熱的・化学的安定性の面方位依存性2019
- Author(s)
  富樫理恵，山野邉咲子，後藤健，村上尚，山腰茂伸，熊谷義直
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PROJECT-19K15457
[Presentation] 水素・窒素気流中におけるβ-Ga2O3(001)，(010)，(-201)基板の熱的・化学的安定性の検討2019
- Author(s)
  富樫理恵，山野邉咲子，後藤健，村上尚，山腰茂伸，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Recent Activities on Visible Range Nanocolumn (NC) Emitting Devices - New development on micro LED-2019
- Author(s)
  K. Kishino, K. Narita, A. Yanagihara, D. Hatakeyama, K. Takimoto, N. Sakakibara1, T. Oto, I. Nomura and R. Togashi
- Organizer
  39th Electronic Materials Symposium (EMS-39)
- Invited
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Regularly Arranged GaN Nanocolumns and Related Emitting Devices2019
- Author(s)
  K. Kishino, K. Yamano, A. Yanagihara and R. Togashi
- Organizer
  PDI Topical Workshop on Epitaxial III-Nitride Semiconductor Nanowires
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Investigation of Thermal and Chemical Stabilities of (001), (010), and (-201) β-Ga2O3 substrates in a flow of either N2 or H22019
- Author(s)
  R. Togashi, S. Yamanobe, K. Goto, H. Murakami, S. Yamakoshi, and Y. Kumagai
- Organizer
  2019 International Workshop on Gallium Oxide and Other Related Materials (IWGO 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 水素雰囲気異方性熱エッチング(HEATE)法によるHVPE-In2O3成長層のエッチング特性評価2019
- Author(s)
  富樫理恵、笠羽遼、大江優輝、長井研太、後藤健、熊谷義直、菊池昭彦
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K15457
[Presentation] Red emission enhancement from InGaN using nanocolumn plasmonic crystals with honeycomb and kagome lattices2019
- Author(s)
  Aoto Aihara, Kz. Kikuchi, K. Okamoto, R. Togashi, K. Kishino and T. Oto
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Investigation of Etching Characteristics of HVPE-Grown In2O3 Layers by Hydrogen-Environment Anisotropic Thermal Etching2019
- Author(s)
  Ryo Kasaba, Yuki Ooe, Kenta Nagai, Ken Goto, Rie Togashi, Akihiko Kikuchi, and Yoshinao Kumagai
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] In2O3のハライド気相成長におけるIn原料分子種の影響2019
- Author(s)
  長井研太，田中那実，税本雄也，富樫理恵，竹川直，後藤健，熊谷義直
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 規則配列GaNナノコラムの光導波路形成”,規則配列InGaNナノコラムを用いた赤色域発光結晶2019
- Author(s)
  畠山大輝, 松井祐三, 富樫理恵, 岸野克巳
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル分科会「第11回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] c面sapphire基板上c-In2O3のHVPE成長における成長速度の影響2017
- Author(s)
  長井研太，須賀隆之，中畑秀利，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第6回結晶工学未来塾
- Data Source
  KAKENHI-PROJECT-16K04944
[Presentation] 高温AlN-HVPEにおける系内酸素がSiドープ量に与える影響2017
- Author(s)
  小西敬太，山本玲緒，富樫理恵，永島徹，木下亨，Rafael Dalmau，Raoul Schlesser，村上尚，Ramon Collazo，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] c面sapphire基板上c-In2O3のHVPE成長における成長速度の影響2017
- Author(s)
  長井研太，須賀隆之，中畑秀利，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第6回結晶工学未来塾
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] ハライド気相成長法によるIn2O3成長の温度依存性2017
- Author(s)
  中畑秀利，須賀隆之，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 異なる酸素源を用いた酸化ガリウムハライド気相成長の比較2017
- Author(s)
  小西敬太，後藤健，富樫理恵，村上尚，東脇正高，倉又朗人，山腰茂伸，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K04944
[Presentation] ハライド気相成長法によるIn2O3成長の温度依存性2017
- Author(s)
  中畑秀利，須賀隆之，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K04944
[Presentation] 高品質窒化アルミニウムのハイドライド気相成長におけるSiドープ量制御2017
- Author(s)
  小西敬太，山本玲緒，富樫理恵，永島徹，木下亨，Rafael Dalmau，Raoul Schlesser，村上尚，Ramon Collazo，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Temperature dependence of In2O3 growth on (0001) sapphire by HVPE2017
- Author(s)
  Takayuki Suga, Shiyu Numata, Rie Togashi, Hisashi Murakami, Bo Monemar, and Yoshinao Kumagai
- Organizer
  International Conference on Light-Emitting Devices and Their Industrial Applications '17 (LEDIA ’17)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Development of bulk AlN substrates for deep-UV optoelectronic devices by HVPE method2017
- Author(s)
  Yoshinao Kumagai, Rie Togashi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramon Collazo, Akinori Koukitu, Bo Monemar, and Zlatko Sitar
- Organizer
  11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE法を用いたIn2O3成長における成長速度の影響2017
- Author(s)
  須賀隆之，中畑秀利，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Halide Vapor Phase Epitaxy of β-Ga2O3 Homoepitaxial Layers Using O2 and H2O as Oxygen Sources2017
- Author(s)
  K. Konishi, K. Goto, R. Togashi, H. Murakami, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and Y. Kumagai
- Organizer
  2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04944
[Presentation] Influence of Growth Rate on Halide Vapor Phase Epitaxy of c-In2O3 on c-Plane Sapphire Substrates2017
- Author(s)
  T. Suga, H. Nakahata, K. Konishi, R. Togashi, H. Murakami, P. P. Paskov, B. Monemar, and Y. Kumagai
- Organizer
  2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04944
[Presentation] Temperature dependence of In2O3 growth on (0001) sapphire by HVPE2017
- Author(s)
  Takayuki Suga, Shiyu Numata, Rie Togashi, Hisashi Murakami, Bo Monemar, and Yoshinao Kumagai
- Organizer
  International Conference on Light-Emitting Devices and Their Industrial Applications '17 (LEDIA '17)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04944
[Presentation] Influence of ambient oxygen on Si incorporation during hydride vapor phase epitaxy of AlN at high temperature2017
- Author(s)
  Keita Konishi, Reo Yamamoto, Rie Togashi, Toru Nagashima, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramon Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
- Organizer
  11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Influence of Growth Rate on Halide Vapor Phase Epitaxy of c-In2O3 on c-Plane Sapphire Substrates2017
- Author(s)
  T. Suga, H. Nakahata, K. Konishi, R. Togashi, H. Murakami, P. P. Paskov, B. Monemar, and Y. Kumagai
- Organizer
  2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] HVPE法を用いたIn2O3成長における成長速度の影響2017
- Author(s)
  須賀隆之，中畑秀利，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K04944
[Presentation] Halide Vapor Phase Epitaxy of β-Ga2O3 Homoepitaxial Layers Using O2 and H2O as Oxygen Sources2017
- Author(s)
  K. Konishi, K. Goto, R. Togashi, H. Murakami, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and Y. Kumagai
- Organizer
  2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 異なる酸素源を用いた酸化ガリウムハライド気相成長の比較2017
- Author(s)
  小西敬太，後藤健，富樫理恵，村上尚，東脇正高，倉又朗人，山腰茂伸，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Progress of homoepitaxial growth technique of thick β-Ga2O3 layers by halide vapor phase epitaxy2016
- Author(s)
  Y. Kumagai, K. Nomura, K. Goto, Q.-T. Thieu, R. Togashi, K. Sasaki, K. Konishi, H. Murakami, A. Kuramata, S. Yamakoshi, B. Monemar, A. Koukitu, M. Higashiwaki
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center（愛知県名古屋市熱田区）
- Year and Date
  2016-08-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Growth of In2O3 by Halide Vapor Phase Epitaxy2016
- Author(s)
  Shiyu. Numata, Rie Togashi, Ken Goto, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, and Yoshinao Kumagai
- Organizer
  The 4th International Conference on Light-Emitting Devices and Their Industrial Applications ’16 (LEDIA ’16)
- Place of Presentation
  Pacifico Yokohama, Japan
- Year and Date
  2016-05-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04944
[Presentation] HVPE法によるn形AlNバルク基板作製の検討2016
- Author(s)
  熊谷義直，富樫理恵，山本玲緒，永島徹，木下亨，村上尚，Monemar Bo，纐纈明伯
- Organizer
  応用物理学会結晶工学分科会第145回研究会
- Place of Presentation
  名古屋大学東山キャンパス（愛知県名古屋市千種区）
- Year and Date
  2016-06-03
- Invited
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Recent Progress in the Growth of AlN by HVPE on Native AlN Substrates2016
- Author(s)
  T. Kinoshita, T. Nagashima, T. Obata, R. Togashi, R. Schlesser, R. Collazo, A. Koukitu, Y. Kumagai and Z. Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN 2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, FL, U.S.A.
- Year and Date
  2016-10-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] ハライド気相成長法によるc-In2O3の高温成長2016
- Author(s)
  沼田至優，富樫理恵，林田真由子，須賀隆之，後藤健，倉又朗人，山腰茂伸，Plamen Paskov，Bo Monemar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第5回結晶工学未来塾
- Place of Presentation
  東京農工大学小金井キャンパス（東京都小金井市）
- Year and Date
  2016-11-07
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Growth of AlN substrates by hydride vapor phase epitaxy for opto-electronic devices2016
- Author(s)
  T. Kinoshita, T. Nagashima, T. Obata, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, Z. Sitar
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center（愛知県名古屋市熱田区）
- Year and Date
  2016-08-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE法AlN単結晶基板表面のSi蓄積の原因調査および制御の検討2016
- Author(s)
  佐藤圭介，寺尾真人，三井太朗，山本玲緒，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，纐纈明伯，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第5回結晶工学未来塾
- Place of Presentation
  東京農工大学小金井キャンパス（東京都小金井市）
- Year and Date
  2016-11-07
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE growth of AlN substrates for opto-electronic applications2015
- Author(s)
  Toru Kinoshita, Toru Nagashima, Toshiyuki Obata, Shinya Takashima, Reo Yamamoto, Rie Togashi, Yoshinao Kumagai, Raoul Schlesser, Ramon Collazo, Akinori Koukitu, and Zlatko Sitar
- Organizer
  The 2015 E-MRS Fall Meeting and Exhibit
- Place of Presentation
  Warsaw University of Technology, Warsaw, Poland
- Year and Date
  2015-09-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy2015
- Author(s)
  R. Yamamoto, T. Kinoshita, T. Nagashima, T. Obata, S. Takashima, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, and Z. Sitar
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Act City Hamamatsu（静岡県浜松市）
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE法によるn型AlN基板作製と縦型ショットキーダイオードへの適用2015
- Author(s)
  山本玲緒，木下亨，永島徹，小幡俊之，高島信也，富樫理恵，熊谷義直，Raoul Schlesser，Ramon Collazo，纐纈明伯，Zlatko Sitar
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE法によるSiドープn形AlN基板作製と縦型ショットキーバリアダイオード試作への適用2015
- Author(s)
  寺尾真人，山本玲緒，木下亨，永島徹，小幡俊之，高島信也，富樫理恵，村上尚，Raoul Schlesser，Ramon Collazo，纐纈明伯，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  第45回結晶成長国内会議（NCCG-45）
- Place of Presentation
  北海道大学学術交流会館（北海道札幌市）
- Year and Date
  2015-10-20
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Demonstration of high-speed growth of InN by HVPE with a two-step precursor generation scheme2013
- Author(s)
  Naoto Fujita, Ryota Imai, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha University, Kyoto, Japan(17p-M6-3.)
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] High-Speed InN Growth Using a Novel Two-Stage Source Generation Hydride Vapor Phase Epitaxy System2013
- Author(s)
  Rie Togashi, Naoto Fujita, Ryota Imai, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Kloster Seeon, Seeon, Germany
- Year and Date
  2013-10-03
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] Temperature Dependence of InN Growth by a Novel HVPE System with Two-Step Generation of InCl_32013
- Author(s)
  Naoto Fujita, Ryota Imai, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gaylord National Resort & Convention Center, Washington, D.C., U.S.A.(A1.05.)
- Year and Date
  2013-08-26
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] Comparative Study on High-Speed InN Growth in Both In- and N-Polarities Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System2013
- Author(s)
  Rie Togashi, Naoto Fujita, Ryota Imai, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gaylord National Resort & Convention Center, Washington, D.C., U.S.A.(A1.04.)
- Year and Date
  2013-08-26
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] High-Speed Growth of In- and N-polarity InN Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System2013
- Author(s)
  Rie Togashi, Naoto Fujita, Ryota Imai, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  Conference on LED and its industrial application '13 (LEDIA '13)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan(LEDp3-15.)
- Year and Date
  2013-04-24
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] Effect of high NH_3 input partial pressure on hydride vapor phase epitaxy of InN using nitrided (0001) sapphire substrates2012
- Author(s)
  Rie Togashi, Sho Yamamoto, Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo Convention Center, Sapporo, Japan(TuP-GR-55.)
- Year and Date
  2012-10-16
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] High-Speed Growth of InN Using a Two-Stage Source Generation HVPE System2012
- Author(s)
  Rie Togashi, Ryota Imai, Sho Yamamoto, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Place of Presentation
  Tohoku University, Sendai, Japan
- Year and Date
  2012-10-22
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE2012
- Author(s)
  Ryota Imai, Sho Yamamoto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo Convention Center, Sapporo, Japan(TuP-GR-60.)
- Year and Date
  2012-10-16
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] HVPE法によるInN/sapphire(0001)テンプレート上InN高速成長の検討2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第3回　窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学　筑紫キャンパス
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] HVPE法によるInN/sapphire(0001)MBEテンプレート上へのInN成長の検討2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] InN/sapphire(0001)MBEテンプレート上へのInN HVPEにおける成長速度の影響2011
- Author(s)
  山本翔,東川義弘,富樫理恵,村上尚,熊谷義直,山口智弘,荒木努,名西やすし,纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス(30a-ZE-12.)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] InN/sapphire(0001)MBEテンプレート上へのInN HVPEにおける成長速度の影響2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学　小白川キャンパス
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] Temperature Dependence of InN Growth by a Novel HVPE System with Two-Step Generation of InCl3
- Author(s)
  Naoto Fujita, Ryota Imai, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gaylord National Resort & Convention Center, Washington, D.C., U.S.A.
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] Improvement of crystalline and optical properties of InN grown on nitrided (0001) sapphire with high NH3 input partial pressures by HVPE
- Author(s)
  R. Togashi, S. Yamamoto, K. F. Karlsson, H. Murakami, Y. Kumagai, P. O. Holtz, A. Koukitu
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山大学文京キャンパス
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] Comparative Study on High-Speed InN Growth in Both In- and N-Polarities Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System
- Author(s)
  Rie Togashi, Naoto Fujita, Ryota Imai, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gaylord National Resort & Convention Center, Washington, D.C., U.S.A.
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] 前駆体二段階生成HVPE法によるIn, N各極性InN高速成長の比較検討
- Author(s)
  斉藤広伸, 藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] Demonstration of high-speed growth of InN by HVPE with a two-step precursor generation scheme
- Author(s)
  Naoto Fujita, R. Imai, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha University, Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE
- Author(s)
  Ryota Imai, Sho Yamamoto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo Convention Center, Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] 前駆体二段階生成HVPE法により作製したInN成長層の特性評価
- Author(s)
  富樫理恵, 斉藤広伸，藤田直人，今井亮太，村上尚，熊谷義直，纐纈明伯
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] HVPE法を用いたsapphire(0001)基板上InN成長におけるNH3供給分圧依存性
- Author(s)
  富樫理恵，山本翔，K. F. Karlsson，村上尚，熊谷義直，P. O. Holtz，纐纈明伯
- Organizer
  第42回結晶成長国内会議（NCCG-42）
- Place of Presentation
  九州大学筑紫キャンパス
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] GaN自立基板上InNハイドライド気相成長における基板極性の影響
- Author(s)
  富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第4回窒化物半導体結晶成長講演会(プレIWN2012講演会)
- Place of Presentation
  東京大学生産技術研究所 An棟　コンベンションホール
- Invited
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] High-Speed InN Growth on Yttria-Stabilized Zirconia (111) Substrates by a Two-Step Precursor Generation HVPE System
- Author(s)
  C. Kojima, R. Togashi, R. Imai, N. Fujita, H. Saito, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and its industrial application '14 (LEDIA ’14)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] High-Speed InN Growth Using a Novel Two-Stage Source Generation Hydride Vapor Phase Epitaxy System
- Author(s)
  R. Togashi, N. Fujita, R. Imai, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Kloster Seeon, Seeon, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] 2段階原料生成HVPE法によるGaN/sapphire(0001)テンプレート上InN成長
- Author(s)
  今井亮太，山本翔，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第42回結晶成長国内会議（NCCG-42）
- Place of Presentation
  九州大学筑紫キャンパス
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] High-Speed Growth of InN Using a Two-Stage Source Generation HVPE System
- Author(s)
  R. Togashi, R. Imai, S. Yamamoto, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Place of Presentation
  Tohoku University, Sendai, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] 前駆体二段階生成HVPE装置を用いたIn極性およびN極性InN成長の比較検討
- Author(s)
  斉藤広伸，藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学銀杏会館
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] 前駆体二段階生成HVPE法によるInNの高速成長の実現
- Author(s)
  藤田直人，斉藤広伸，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学銀杏会館
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] 前駆体二段階生成HVPE法によるIn極性およびN極性InNの高速成長
- Author(s)
  斉藤広伸, 藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] High-speed growth of InN over 10 μm/h by a novel HVPE system
- Author(s)
  N. Fujita, R. Imai, H. Saito, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and its industrial application '13 (LEDIA ’13)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] 前駆体二段階生成HVPE法によるInN成長の温度依存性
- Author(s)
  藤田直人, 斉藤広伸，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] Effect of high NH3 input partial pressure on hydride vapor phase epitaxy of InN using nitrided (0001) sapphire substrates
- Author(s)
  Rie Togashi, Sho Yamamoto, Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo Convention Center, Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] High-Speed Growth of In- and N-polarity InN Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System
- Author(s)
  R. Togashi, N. Fujita, R. Imai, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and its industrial application '13 (LEDIA ’13)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760006
[Presentation] ２段階原料生成機構を有する新規HVPE法によるInNの高速成長の検討
- Author(s)
  今井亮太，山本翔，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山大学文京キャンパス
- Data Source
  KAKENHI-PROJECT-23760006

1. 山口智広 (50454517)

# of Collaborated Projects: 3 results

# of Collaborated Products: 11 results
2. Kumagai Yoshinao (20313306)

# of Collaborated Projects: 2 results

# of Collaborated Products: 47 results
3. 村上尚 (90401455)

# of Collaborated Projects: 2 results

# of Collaborated Products: 24 results
4. KISHINO Katsumi (90134824)

# of Collaborated Projects: 1 results

# of Collaborated Products: 36 results
5. Imanishi Masayuki (00795487)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
6. 後藤健 (50572856)

# of Collaborated Projects: 1 results

# of Collaborated Products: 24 results
7. 小西敬太 (50805257)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
8. 野村一郎 (00266074)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
9. 大音隆男 (20749931)

# of Collaborated Projects: 1 results

# of Collaborated Products: 23 results
10. 宇佐美茂佳 (30897947)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
11. 佐々木拓生 (90586190)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. SITAR Zlatko

# of Collaborated Projects: 1 results

# of Collaborated Products: 13 results
13. KINOSHITA Toru

# of Collaborated Projects: 1 results

# of Collaborated Products: 13 results
14. TUOMISTO Filip

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. OKAMOTO Koichi

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Togashi Rie 富樫 理恵

TOGASHI Rie 富樫 理恵

Research Projects

Research Products

Co-Researchers

赤色発光素子応用に資するInGaNマトリクスの構造制御

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水ガスを用いた原料分子種生成制御反応の解明による高品質酸化インジウム結晶の創出Principal Investigator

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Growth technique of High quality gallium oxide crystal by toxic gas-free OVPE method

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Generation of high-purity gallium oxide semiconductor crystals by studying the formation mechanism of new source material speciesPrincipal Investigator

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Innovation of Three Primary Colors Emitting Devices by Nanocolumn Crystals

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Investigation of the effect of hydrogen on gallium oxide growth by comparison of growth using completely non-hydrogen system and hydrogen systemPrincipal Investigator

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Bottom up creation of singularities by utilization of equilibrium and non-equilibrium crystal growth from vapor phase

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Realization of n-type AlN by clarifying the mechanism of point defect formation in bulk AlN crystal

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Investigation of Preferential Source Generation Mechanism for the Realization of Bulk Crystal Growth of Indium NitridePrincipal Investigator

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[Journal Article] Photonic band characterization in InGaN/GaN nanocolumn arrays with triangular and honeycomb lattices by angle-resolved micro-photoluminescence measurements2021

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[Journal Article] Comparison of surface plasmon polariton characteristics of Ag- and Au-based InGaN/GaN nanocolumn plasmonic crystals2021

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[Journal Article] Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0001) substrates2021

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[Journal Article] Comparison of O2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy2018

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[Journal Article] High rate growth of In2O3 at 1000℃ by halide vapor phase epitaxy2016

Togashi Rie 富樫理恵

TOGASHI Rie 富樫理恵