Okamoto Dai 岡本大

Researcher Number	50612181
Other IDs
Affiliation (Current)	2025: 富山県立大学, 工学部, 准教授
Affiliation (based on the past Project Information) *help	2021 – 2023: 富山県立大学, 工学部, 准教授 2015 – 2020: 筑波大学, 数理物質系, 助教 2014: 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究員
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials / Electron device/Electronic equipment Except Principal Investigator Electronic materials/Electric materials
Keywords	Principal Investigator MOSFET / シリコンカーバイド / チャネル移動度 / 炭化ケイ素 / 界面準位 / ＭＯＳＦＥＴ / 炭化珪素 / 熱酸化 / ゲート酸化膜 / 界面準位密度 … More / SiC / しきい値変動 / SiC MOSFET / 酸化膜信頼性 / 信頼性 / MOS界面 / チャージポンピング / NBTI / しきい値電圧変動 / ＭＯＳ界面 / パワーデバイス / パッシベーション / ボロン … More Except Principal Investigator MOS界面 / 電子・電気材料 / pMOS / ｐ型ＭＯＳ / 超接合 / パワーデバイス / 炭化ケイ素 Less

Development of High Mobility and High Reliability SiC MOSFETs by Fluorine-Enhanced Thermal OxidationPrincipal Investigator
- Principal Investigator
  
  岡本大
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Toyama Prefectural University
Understanding of NBTI phenomenon and its control guidelines for high reliability SiC power devicesPrincipal Investigator
- Principal Investigator
  
  Okamoto Dai
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Toyama Prefectural University
  University of Tsukuba
Tailoring the dierectric-SiC Interface using a new oxidation procedure with precursors and its application to MOSFETsPrincipal Investigator
- Principal Investigator
  
  Okamoto Dai
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
Fundamental research and development of low-loss p-type SiC superjunction power MOSFETs
- Principal Investigator
  
  Yano Hiroshi
- Project Period (FY)
  2016 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
Development of SiC MOSFETs with High Channel Mobility by Incorporation of New Interface Passivation ElementsPrincipal Investigator
- Principal Investigator
  
  Okamoto Dai
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Tsukuba
  National Institute of Advanced Industrial Science and Technology

All 2023 2022 2021 2020 2019 2018 2017 2016 2014 Other

All Journal Article Presentation

[Journal Article] Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method2021
- Author(s)
  Sakata Hiroki、Okamoto Dai、Sometani Mitsuru、Okamoto Mitsuo、Hirai Hirohisa、Harada Shinsuke、Hatakeyama Tetsuo、Yano Hiroshi、Iwamuro Noriyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 6 Pages: 060901-060901
- DOI
  10.35848/1347-4065/abff38
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04574
[Journal Article] Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs2020
- Author(s)
  Nemoto Hiroki、Okamoto Dai、Zhang Xufang、Sometani Mitsuru、Okamoto Mitsuo、Hatakeyama Tetsuo、Harada Shinsuke、Iwamuro Noriyuki、Yano Hiroshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 4 Pages: 044003-044003
- DOI
  10.35848/1347-4065/ab7ddb
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors2018
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57
- NAID
  210000149219
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors2018
- Author(s)
  Y. Karamoto, X. Zhang, D. Okamoto, M. Sometani, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57
- NAID
  210000149221
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Characterization of Near-Interface Traps at 4H-SiC Metal-Oxide-Semiconductor Interfaces Using a Modified Distributed Circuit Model2017
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, R. Kosugi, N. Iwamuro, and H. Yano
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 10 Issue: 6 Pages: 064101-064101
- DOI
  10.7567/apex.10.064101
- NAID
  210000135889
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation2014
- Author(s)
  D. Okamoto, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa, and H. Yano
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 35 Issue: 12 Pages: 1176-1178
- DOI
  10.1109/led.2014.2362768
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26820136
[Presentation] SiF4添加酸化によるSiO2/4H-SiC 構造における界面準位密度の低減2023
- Author(s)
  高林知輝, 岡本大, 染谷満, 平井悠久, 岡本光央, 畠山哲夫
- Organizer
  令和５年度(2023年) 応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-23K03974
[Presentation] pチャネルSiC MOSFETにおけるCharge Pumping電流のチャネル長依存性2023
- Author(s)
  田口雄大, 岡本大, 染谷満, 平井悠久, 岡本光央, 畠山哲夫
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K03974
[Presentation] SiC MOSFETのSplit CV特性を説明する等価回路モデルの検討2023
- Author(s)
  酒井彰人, 岡本大, 染谷満, 平井悠久, 岡本光央, 畠山哲夫
- Organizer
  令和５年度(2023年) 応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-23K03974
[Presentation] pチャネルSiC MOSFETにおけるストレス印加・緩和時のしきい値電圧不安定性評価2023
- Author(s)
  小橋明希斗, 岡本大, 染谷満, 平井悠久, 岡本光央, 畠山哲夫
- Organizer
  令和５年度(2023年) 応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-23K03974
[Presentation] Understanding Negative Bias Temperature Instability in 4H-SiC MOSFETs by Fast Threshold Voltage Measurements2022
- Author(s)
  Dai Okamoto, Mitsuru Sometani, Hirohisa Hirai, Mitsuo Okamoto, Tetsuo Hatakeyama
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04574
[Presentation] SiC MOSFETにおけるCharge pumping電流の素子形状依存性2022
- Author(s)
  石塚巧真、岡本大、染谷満、平井悠久、岡本光央、畠山哲夫
- Organizer
  令和4年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-20K04574
[Presentation] On-the-fly charge pumpingの温度依存性測定によるSiC MOSFETのNBTI特性の解析2021
- Author(s)
  岡野夏樹, 岡本大, 染谷満, 平井悠久, 岡本光央, 畠山哲夫
- Organizer
  令和3年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-20K04574
[Presentation] 改良高速On-the-fly法によるSiC MOSFETのNBTI評価2021
- Author(s)
  坂田大輝, 岡本大, 染谷満, 平井悠久, 岡本光央, 原田信介, 畠山哲夫, 矢野裕司, 岩室憲幸
- Organizer
  先進パワー半導体分科会第８回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20K04574
[Presentation] On-the-fly Charge Pumping法によるSiC MOSFET NBTI劣化メカニズムの解析2021
- Author(s)
  岡本大, 染谷満, 平井悠久, 岡本光央, 原田信介, 畠山哲夫
- Organizer
  第26回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-20K04574
[Presentation] Negative Bias Temperature Instability in 4H-SiC MOSFETs Investigated by On-the-fly Methods2021
- Author(s)
  Dai Okamoto, Mitsuru Sometani, Hirohisa Hirai, Mitsuo Okamoto, Tetsuo Hatakeyama
- Organizer
  IEEE International Meting for Future of Electron Devices, Kansai (IMFEDK 2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04574
[Presentation] SiC pチャネルMOSFETの正孔輸送機構の解析2020
- Author(s)
  岡本大, 周星炎, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  第25回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-17K14653
[Presentation] 改良高速On-the-fly法によるSiC MOSFETの正確なNBTI評価2020
- Author(s)
  坂田大輝, 岡本大, 染谷満, 平井悠久, 岡本光央, 原田信介, 畠山哲夫, 矢野裕司, 岩室憲幸
- Organizer
  先進パワー半導体分科会第７回講演会
- Data Source
  KAKENHI-PROJECT-20K04574
[Presentation] SiC pチャネルMOSFETの正孔輸送機構の解析2020
- Author(s)
  岡本大, 周星炎, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－第25回研究会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Influence of Interface Traps on Split C-V Characteristics of 4H-SiC MOSFETs2020
- Author(s)
  Gyozen Sai, Dai Okamoto, Noriyuki Iwamoro, and Hiroshi Yano
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] On-the-flyチャージポンピング法によるSiC MOSFET 負バイアスストレス時の界面トラップ生成解析2020
- Author(s)
  岡本大, 染谷満, 坂田大輝, 張旭芳, 松谷優汰, 畠山哲夫, 岡本光央, 原田信介, 矢野裕司, 岩室憲幸
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K14653
[Presentation] Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides2019
- Author(s)
  Xufang Zhang, Dai Okamoto, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method2019
- Author(s)
  D. Okamoto, H. Nemoto, X. Zhang, X. Zhou, M. Somenati, M. Okamoto, S. Harada, T. Hatakeyama, N. Iwamuro, H, Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019
- Data Source
  KAKENHI-PROJECT-17K14653
[Presentation] ｐチャネル4H-SiC MOSFETのチャネルドリフト移動度の導出と散乱機構の解明2019
- Author(s)
  周星炎, 岡本大, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17K14653
[Presentation] Interface Characterization of Nitrided a- and m-Face 4H-SiC MOS Structures Using Distributed Circuit Mode2019
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－第24回研究会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method2019
- Author(s)
  Dai Okamoto, Hiroki Nemoto, Xufang Zhang, Xingyan Zhou, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Tetsuo Hatakeyama, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Accurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs2019
- Author(s)
  Xingyan Zhou, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Noriyuki Iwamuro, Hirosi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Analysis of three-level charge pumping characteristics of 4H-SiC MOSFETs considering near-interface traps2019
- Author(s)
  Yuta Matsuya, Xufang Zhang, Dai Okamoto, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias2019
- Author(s)
  Hiroki Nemoto, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Accurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs2019
- Author(s)
  X. Zhou, D. Okamoto, X. Zhang, M. Sometani, M. Okamoto, S. Harada, N. Iwamuro, H. Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019
- Data Source
  KAKENHI-PROJECT-17K14653
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜正孔リーク電流伝導機構の解析2019
- Author(s)
  根本宏樹, 岡本大, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] ｐチャネル4H-SiC MOSFETのチャネルドリフト移動度の導出と散乱機構の解明2019
- Author(s)
  周星炎, 岡本大, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 高速緩和なし法によるpチャネル4H-SiC MOSFETのしきい値電圧変動評価2019
- Author(s)
  坂田大輝, 岡本大, 染谷満, 岡本光央, 原田信介, 畠山哲夫, 根本宏樹, 張旭芳, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17K14653
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜正孔リーク電流伝導機構の解析2019
- Author(s)
  根本宏樹, 岡本大, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 高速緩和なし法によるpチャネル4H-SiC MOSFETのしきい値電圧変動評価2019
- Author(s)
  坂田大輝, 岡本大, 染谷満, 岡本光央, 原田信介, 畠山哲夫, 根本宏樹, 張旭芳, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 界面近傍酸化膜トラップを考慮した4H-SiC MOSFETの3レベルチャージポンピング特性の解析2019
- Author(s)
  松谷優汰, 張旭芳, 岡本大, 岩室憲幸, 矢野裕司
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 界面近傍酸化膜トラップを考慮した4H-SiC MOSFETにおける3レベルチャージポンピング特性の解析2019
- Author(s)
  松谷優汰，張旭芳，岡本大，岩室憲幸，矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides2019
- Author(s)
  X. Zhang, D. Okamoto, M. Sometani, S. Harada, N. Iwamuro, H. Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019
- Data Source
  KAKENHI-PROJECT-17K14653
[Presentation] Mobility limiting mechanisms in p-channel 4H-SiC MOSFETs investigated by Hall-effect measurements2018
- Author(s)
  X. Zhou, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, X. Zhang, N. Iwamuro, H. Yano
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14653
[Presentation] Difference of NIT Density Distribution in 4H-SiC MOS Interfaces for Si- and C-faces2018
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－　第23回研究会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Analysis of leakage current conduction mechanisms in thermally grown oxides on p-channel 4H-SiC MOSFETs2018
- Author(s)
  H. Nemoto, D. Okamoto, M. Sometani, Y. Kiuchi, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano,
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Hall効果測定によるpチャネル4H-SiC MOSFETのチャネル輸送機構の解明2018
- Author(s)
  周星炎，岡本大，畠山哲夫，染谷満，原田信介，岡本光央，張旭芳，岩室憲幸，矢野裕司
- Organizer
  先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Hall効果測定によるpチャネル4H-SiC MOSFETのチャネル輸送機構の解明2018
- Author(s)
  周星炎，岡本大，畠山哲夫，染谷満，原田信介，岡本光央，張旭芳，岩室憲幸，矢野裕司
- Organizer
  先進パワー半導体分科会第5回講演
- Data Source
  KAKENHI-PROJECT-17K14653
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜リーク電流伝導機構の解析2018
- Author(s)
  根本宏樹，岡本大，染谷満，木内祐治，岡本光央，畠山哲夫，原田信介，岩室憲幸，矢野裕司
- Organizer
  先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜リーク電流伝導機構の解析2018
- Author(s)
  根本宏樹, 岡本大, 染谷満, 木内祐治, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Mobility limiting mechanisms in p-channel 4H-SiC MOSFETs investigated by Hall-effect measurements2018
- Author(s)
  X. Zhou, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, X. Zhang, N. Iwamuro, and H. Yano
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Impact of passivation treatments on channel mobility for p-channel 4H-SiC MOSFETs2018
- Author(s)
  X. Zhou, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, Y. Karamoto, X. Zhang, N. Iwamuro, and H. Yano
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] コンダクタンス法によるp型SiC MOS界面の高速及び低速応答準位の解析2017
- Author(s)
  唐本祐樹, 張旭芳, 岡本大, 染谷満, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Impact of Oxide Thickness on the Density Distribution of Near-interface Traps in 4H-SiC MOS Capacitors2017
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano
- Organizer
  2017 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (2017IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 4H-SiC MOS 界面におけるNIT 密度分布の膜厚依存性2017
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] コンダクタンス法によるp型SiC MOSキャパシタ界面特性の解析2017
- Author(s)
  唐本祐樹, 張旭芳, 岡本大, 染谷満, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Verification of Modified Distributed Circuit Model for Near-Interface Traps in 4H-SiC MOS Interface2017
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－　第22回研究会
- Place of Presentation
  東レ研修センター（静岡県・三島市）
- Year and Date
  2017-01-20
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Analysis of Fast and Slow Responses of Interface Traps in p-type SiC MOS Capacitors by Conductance Method2017
- Author(s)
  Y. Karamoto, X.Zhang, D. Okamoto, M. Sometani, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano
- Organizer
  2017 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (2017IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Verification of density distribution of near-interface traps in 4H-SiC MOS capacitors with different oxide thicknesses2017
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 窒化したp 型SiC MOS キャパシタにおける反転層の形成2016
- Author(s)
  唐本祐樹, 岡本大, 原田信介, 染谷満, 畠山哲夫, 小杉亮治, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場（茨城県・つくば市）
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors2016
- Author(s)
  X. F. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, R. Kosugi, N. Iwamuro, and H. Yano
- Organizer
  47th IEEE Semiconductor interface Specialist Conference (SISC2016)
- Place of Presentation
  San Diego (USA)
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors2016
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 窒化したp型SiC MOSキャパシタにおける反転層の形成2016
- Author(s)
  唐本祐樹, 岡本大, 原田信介, 染谷満, 畠山哲夫, 小杉亮治, 岩室憲幸, 矢野裕司
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Quantitative estimation of near-interface traps with distributed circuit model for 4H-SiC MOS capacitors2016
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場（茨城県・つくば市）
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 直列抵抗を考慮したインピーダンス測定によるSiC MOS界面解析2016
- Author(s)
  岡本大, 張旭芳, 畠山哲夫, 染谷満, 原田信介, 小杉亮治, 岩室憲幸, 矢野裕司
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] B導入による高移動度4H-SiC MOSFETの作製と界面トラップ評価
- Author(s)
  岡本大，染谷満，原田信介，小杉亮治，米澤喜幸，矢野裕司
- Organizer
  第20回ゲートスタック研究会ゲートスタック研究会 -材料・プロセス・評価の物理-
- Place of Presentation
  東レ研修センター（静岡県三島市）
- Year and Date
  2015-01-29 – 2015-01-31
- Data Source
  KAKENHI-PROJECT-26820136
[Presentation] Demonstration of High Channel Mobility in 4H-SiC MOSFETs by Utilizing Boron-Doped Gate Oxide
- Author(s)
  D. Okamoto, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa, and H. Yano
- Organizer
  45th IEEE Semiconductor Interface Specialists Conference (SISC)
- Place of Presentation
  San Diego (CA, USA)
- Year and Date
  2014-12-10 – 2014-12-13
- Data Source
  KAKENHI-PROJECT-26820136

1. Yano Hiroshi (40335485)

# of Collaborated Projects: 1 results

# of Collaborated Products: 38 results
2. 岩室憲幸 (50581203)

# of Collaborated Projects: 1 results

# of Collaborated Products: 37 results

Okamoto Dai 岡本 大

Research Projects

Research Products

Co-Researchers

Development of High Mobility and High Reliability SiC MOSFETs by Fluorine-Enhanced Thermal OxidationPrincipal Investigator

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Understanding of NBTI phenomenon and its control guidelines for high reliability SiC power devicesPrincipal Investigator

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Tailoring the dierectric-SiC Interface using a new oxidation procedure with precursors and its application to MOSFETsPrincipal Investigator

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Fundamental research and development of low-loss p-type SiC superjunction power MOSFETs

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Development of SiC MOSFETs with High Channel Mobility by Incorporation of New Interface Passivation ElementsPrincipal Investigator

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[Journal Article] Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method2021

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Journal Title

DOI

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[Journal Article] Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs2020

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DOI

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[Journal Article] Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors2018

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NAID

Data Source

[Journal Article] Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors2018

Author(s)

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NAID

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[Journal Article] Characterization of Near-Interface Traps at 4H-SiC Metal-Oxide-Semiconductor Interfaces Using a Modified Distributed Circuit Model2017

Author(s)

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DOI

NAID

Data Source

[Journal Article] Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation2014

Author(s)

Journal Title

DOI

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[Presentation] SiF4添加酸化によるSiO2/4H-SiC 構造における界面準位密度の低減2023

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Organizer

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[Presentation] pチャネルSiC MOSFETにおけるCharge Pumping電流のチャネル長依存性2023

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Organizer

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[Presentation] SiC MOSFETのSplit CV特性を説明する等価回路モデルの検討2023

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[Presentation] pチャネルSiC MOSFETにおけるストレス印加・緩和時のしきい値電圧不安定性評価2023

Author(s)

Organizer

Okamoto Dai 岡本大