TSUKAMOTO TAKAHIRO 塚本貴広

… Alternative Names

TSUKAMOTO Takahiro 塚本貴広

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Researcher Number	50640942
Other IDs
Affiliation (Current)	2025: 電気通信大学, 大学院情報理工学研究科, 准教授
Affiliation (based on the past Project Information) *help	2025: 電気通信大学, 大学院情報理工学研究科, 准教授 2022 – 2023: 電気通信大学, 大学院情報理工学研究科, 准教授 2017 – 2021: 電気通信大学, 大学院情報理工学研究科, 助教 2013 – 2017: 東京農工大学, 工学(系)研究科(研究院), 助教 2014: 東京農工大学, 工学(系)研究院(研究科), 助教 2014: 東京農工大学, 大学院工学研究院, 助教
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Electron device/Electronic equipment / Electronic materials/Electric materials
Keywords	Principal Investigator スパッタエピタキシー / スパッタエピタキシー法 / GeSn / 結晶成長 / RTD / GeSiSn / 量子効果デバイス / 半導体 / ラマン分光法 / ヘテロ接合 … More / Sn析出 / Sn拡散 / 量子井戸 / 電子・電気材料 / 電子デバイス・機器 / Ⅳ族半導体 / 共鳴トンネルダイオード / ゲルマニウム / ゲルマニウムスズ … More Except Principal Investigator 電子デバイス・機器 / 共鳴トンネルダイオード / 量子エレクトロニクス / 電子デバイイス・機器 / 界面電位 / 先端機能デバイス / 界面準位 / ＳｉＣ / クロスポイント型配列 / ＰＮダイオード / 抵抗変化型メモリ / 不揮発性メモリ / 半導体メモリ / 高速デバイス / ヘテロ接合 / サファクタント / エピタキシー / 仮想基板 / ゲルマニウム Less

結晶性酸化膜／半導体ヘテロ接合による量子積層構造と高周波発振素子への展開Principal Investigator
- Principal Investigator
  
  塚本貴広
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  The University of Electro-Communications
GeSn結晶成長技術の高度化とⅣ族レーザへの展開Principal Investigator
- Principal Investigator
  
  塚本貴広
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  The University of Electro-Communications
Development of high-frequency devices using GeSiSn/GeSn quantum wellsPrincipal Investigator
- Principal Investigator
  
  TSUKAMOTO TAKAHIRO
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  The University of Electro-Communications
High-performance Si/SiGe RTD with fully compressively strained SiGe of high Ge composition ratio formed by sputtering method
- Principal Investigator
  
  Suda Yoshiyuki
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Agriculture and Technology
Group-IV lattice-matched heterostructure and its application to high-frequency devicesPrincipal Investigator
- Principal Investigator
  
  TSUKAMOTO TAKAHIRO
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Electro-Communications
  Tokyo University of Agriculture and Technology
Development of memory diode and its application to densest array memory
- Principal Investigator
  
  Suda Yoshiyuki
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Agriculture and Technology
Technology of Formation of Ge Virtual Substrates by Growth of Ge Flat Films Directly on Si Using Sputter Epitaxy Method
- Principal Investigator
  
  SUDA Yoshiyuki
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology
Formation of GeSn layers by sputter epitaxy methodPrincipal Investigator
- Principal Investigator
  
  TSUKAMOTO TAKAHIRO
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation Patent

[Journal Article] Hole-tunneling S♪i_<0.82>♪G♪e_<0.18>♪/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/c♪m^2♪ fabricated by sputter epitaxy2024
- Author(s)
  Yoshiyuki Suda, Nobumitsu Hirose, Takahiro Tsukamoto, Minoru Wakiya, Ayaka Shinkawa, Akifumi Kasamatsu, Toshiaki Matsui
- Journal Title
  
  Applied Physics Letters
  
  Volume: 124 Issue: 9
- DOI
  10.1063/5.0180934
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03245
[Journal Article] Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method2023
- Author(s)
  Tsukamoto Takahiro、Ikeno Kento、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 604 Pages: 127045-127045
- DOI
  10.1016/j.jcrysgro.2022.127045
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04949
[Journal Article] Direct Growth of Patterned Ge on Insulators Using Graphene2021
- Author(s)
  Tsukamoto Takahiro、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
- Journal Title
  
  The Journal of Physical Chemistry C
  
  Volume: 125 Issue: 25 Pages: 14117-14121
- DOI
  10.1021/acs.jpcc.1c03567
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04487
[Journal Article] Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy2021
- Author(s)
  Tsukamoto Takahiro、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
- Journal Title
  
  Thin Solid Films
  
  Volume: 726 Pages: 138646-138646
- DOI
  10.1016/j.tsf.2021.138646
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04487
[Journal Article] Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth2020
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Journal Title
  
  Electronic Materials Letters
  
  Volume: 16 Issue: 1 Pages: 9-13
- DOI
  10.1007/s13391-019-00179-y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03245, KAKENHI-PROJECT-19K04487
[Journal Article] Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode2020
- Author(s)
  Tsukamoto Takahiro、Kurihara Shota、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
- Journal Title
  
  Electronic Materials Letters
  
  Volume: 16 Issue: 1 Pages: 41-46
- DOI
  10.1007/s13391-019-00185-0
- Data Source
  KAKENHI-PROJECT-19K04487
[Journal Article] Crystallinity control of SiC grown on Si by sputtering method2017
- Author(s)
  Ryosuke Watanabe, Takahiro Tsukamoto, Koichi Kamisako, Yoshiyuki Suda
- Journal Title
  
  J. Crystal Growth
  
  Volume: 463 Pages: 67-71
- DOI
  10.1016/j.jcrysgro.2017.01.042
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289099
[Journal Article] p-Cu2O/SiOx/n-SiC/n-Si memory diode fabricated with room-temperature-sputtered n-SiC and SiOx2016
- Author(s)
  Atsushi Yamashita, Takahiro Tsukamoto, Yoshiyuki Suda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 12 Pages: 124103-124103
- DOI
  10.7567/jjap.55.124103
- NAID
  210000147298
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289099
[Journal Article] p-Cu2O/AlOx/n-SiC/n-Si構造の不揮発性pnメモリダイオードと低電圧動作2016
- Author(s)
  土屋充沙、塚本貴弘、須田良幸
- Journal Title
  
  信学技報
  
  Volume: 116 Pages: 17-20
- Data Source
  KAKENHI-PROJECT-26289099
[Journal Article] Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method2015
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, and Yoshiyuki Suda
- Journal Title
  
  Journal of Materials Science
  
  Volume: 50 Issue: 12 Pages: 4366-4370
- DOI
  10.1007/s10853-015-8990-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25630123, KAKENHI-PROJECT-25820121
[Journal Article] Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy2015
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Yoshiyuki Suda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106 Issue: 5 Pages: 052103-052103
- DOI
  10.1063/1.4907863
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25820121
[Journal Article] p-Cu2O/SiCxOy/n-SiC/n-Si memory diode having resistive nonvolatile memory and rectifying behaviors2014
- Author(s)
  Atsushi Yamashita, Yoshihiko Sato, Takahiro Tsukamoto, and Yoshiyuki Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 7 Pages: 074203-074203
- DOI
  10.7567/apex.7.074203
- NAID
  210000137173
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289099
[Journal Article] p-Cu2O/SiOx/n-SiC構造pnメモリダイオードの低温形成2014
- Author(s)
  山下敦史、塚本貴広、須田良幸
- Journal Title
  
  信学技報
  
  Volume: 114 Pages: 43-47
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289099
[Journal Article] Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method2013
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, and Yoshiyuki Suda
- Journal Title
  
  Applied Physics Letter
  
  Volume: 103 Issue: 17 Pages: 172103-172103
- DOI
  10.1063/1.4826501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25630123, KAKENHI-PROJECT-25820121
[Patent] Manufacturing Method for Semiconductor Laminated Film, and Semiconductor Laminated Film2022
- Inventor(s)
  須田良幸、塚本貴広、本橋叡、出蔵恭平、大久保克己、八木拓馬、笠松章史、広瀬信光、松井敏明
- Industrial Property Rights Holder
  東京農工大学、情報通信研究機構
- Industrial Property Rights Type
  特許
- Acquisition Date
  2022
- Overseas
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] スパッタエピタキシー法により作製したGe/GeSnヘテロ構造におけるSn拡散2022
- Author(s)
  塚本貴広, 池野憲人, 広瀬信光, 笠松章史, 松井敏明, 須田良幸
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] Direct growth of patterned Ge on insulators using graphene2021
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  ISSS-9
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] グラフェンを用いた絶縁膜上におけるGe選択形成技術2021
- Author(s)
  塚本貴広，広瀬信光，笠松章史，松井敏明，須田良幸
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] スパッタエピタキシー法を用いたGe/GeSiSnヘテロ構造形成2020
- Author(s)
  塚本貴広，広瀬信光，笠松章史，松井敏明，須田良幸
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] スパッタエピキシー法を用いた Ge/GeSiSnヘテロ構造形成2020
- Author(s)
  塚本貴広，広瀬信光，笠松章史，松井敏明，須田良幸
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] Lattice-matched GeSiSn/Ge double-barrier resonant tunneling diodes2019
- Author(s)
  Takahiro Tsukamoto, Shota Kurihara, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  The 17th E-MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] Lattice-matched GeSiSn/Ge double-barrier resonant tunneling diodes2019
- Author(s)
  Takahiro Tsukamoto, Minoru Wakiya, Kazuaki Haneda, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  E-MRS Conference Fall meeting 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] スパッタエピタキシー法を&用いたSiGe HEMTの製造技術と特性制御2019
- Author(s)
  青柳耀介、本橋叡、出蔵恭平、大久保克己、広瀬信光、笠松章史、松井敏明、塚本貴広、須田良幸
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] スパッタエピタキシー法で作製した高電流密度のSi/SiGe 正孔トンネル型RTD2018
- Author(s)
  脇谷実、塚本貴広、須田良幸
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] 金属/GeO2/n-Ge電極構造におけるTi薄膜の効果2018
- Author(s)
  栗原祥太，塚本貴広，須田良幸
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18076
[Presentation] スパッタエピタキシー法を用いたSi/SiGe 正孔トンネル型RTDの作製技術と特性制御2018
- Author(s)
  脇谷実、塚本貴広、須田良幸
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] 格子定数整合GeSiSn/Ge系p-RTDの試作2018
- Author(s)
  栗原祥太，脇谷実，塚本貴広，須田良幸
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18076
[Presentation] 格子定数整合GeSiSn/Ge系p-RTDの試作2018
- Author(s)
  栗原祥太、脇谷実、塚本貴広、須田良幸
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] p-Cu2O/SiNx/n-SiC/n-Si構造の抵抗変化型不揮発性メモリダイオード2017
- Author(s)
  素村晃浩, 塚本貴広, 加藤格, 雑賀章浩, 須田良幸
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県、横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] Effects of low-temperature GeSn buffer layer on Sn surface segregation during GeSn epitaxial growth2017
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  10th. International Conference On Silicon Epitaxy and Heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] 格子定数整合系GeSiSn/Ge n-RTDの作製2017
- Author(s)
  羽田一暁, 塚本貴広, 広瀬信光，笠松章史，松井敏明, 須田良幸
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PROJECT-16K18076
[Presentation] Formation of lattice-matched GeSiSn/Ge quantum well structure by sputter epitaxy method2017
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  2017 Materials Research Society Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18076
[Presentation] Epitaxial growth of GeSn and GeSiSn by sputter epitaxy method2017
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  2017 EMN/CC Barcelona Meeting Energy Materials Nanotechnology
- Invited
- Data Source
  KAKENHI-PROJECT-16K18076
[Presentation] Epitaxial growth of GeSn and GeSiSn by sputter epitaxy method2017
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  Energy Materials Nanotechnology Meeting on Epitaxy
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] SiCxOyおよびSiOx電子捕獲層を用いた不揮発性pnメモリダイオードの特性制御SiCxOyおよびSiOx電子捕獲層を用いた不揮発性pnメモリダイオードの特性制御2017
- Author(s)
  土屋充沙，塚本貴広，加藤格，雑賀章浩，須田良幸
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県、横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] Formation of Lattice-Matched GeSiSn/Ge Quantum Well Structure by Sputter Epitaxy2017
- Author(s)
  Takahiro Tsukamoto, Kazuaki Haneda, Hiroto Iwamori, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  2017 Material Research Society Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] p-Cu2O/AlOx/n-SiC/n-Si構造の不揮発性pnメモリダイオードと低電圧動作2016
- Author(s)
  土屋充沙、塚本貴弘、須田良幸
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  首都大学東京（東京都、八王子市）
- Year and Date
  2016-07-23
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] p-Cu2O/AlOx/n-SiC/n-Si-structured nonvolatile pn memory diode with low switching voltages2016
- Author(s)
  Misa Tsuchiya, Tsukamoto Tsukamoto and Yoshiyuki Suda
- Organizer
  29th Int. Microprocesses and Nanotechnology Conf.
- Place of Presentation
  ANA Crowne Plaza Kyoto (Kyoto, Japan)
- Year and Date
  2016-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] Au/CuOx/(CuxNiySiz)mOn/n-Si構造の抵抗変化型不揮発性メモリ2016
- Author(s)
  岩佐太陽、塚本貴広、須田良幸
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都、目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] SiGe Sputter Epitaxy and Its Application to SiGe 2D Devices2015
- Author(s)
  Yoshiyuki Suda, Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Takashi Mimura
- Organizer
  Collaborative Conference on Crystal Growth
- Place of Presentation
  Eaton Hotel (Hong Kong, China)
- Year and Date
  2015-12-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] Effects of DC Sputtering Conditions on Formation of Ge Layers on Si Substrates by Sputter Epitaxy method2014
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, and Yoshiyuki Suda
- Organizer
  2014 Int. SiGe Technology and Device Meeting
- Place of Presentation
  Singapore, Singapore
- Data Source
  KAKENHI-PROJECT-25630123
[Presentation] SiGe Processes and Their Device Applications Using Sputter Epitaxy Method2014
- Author(s)
  Yoshiyuki Suda, Takahiro Tsukamoto, Sohei Fujimura, Satoshi Tamanyu, Akira Motohashi, Midori Ikeda, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura and Toshiaki Matsui
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku University, Miyagi
- Invited
- Data Source
  KAKENHI-PROJECT-25630123
[Presentation] Effect of Boron Dopant of Si (001) Substrates on Growth of Ge Layers using Sputter Epitaxy Method2013
- Author(s)
  Takahiro Tsukamoto, Akifumi Kasamatsu*, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui and Yoshiyuki Suda
- Organizer
  8th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Kyushu University, Fukuoka
- Data Source
  KAKENHI-PROJECT-25630123
[Presentation] Formation of GeSn Layers on Si (001) Ssubstrates by Sputter Epitaxy method
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  Materials Research Society Spring Meeting
- Place of Presentation
  サンフランシスコ（アメリカ）
- Year and Date
  2015-04-06 – 2015-04-10
- Data Source
  KAKENHI-PROJECT-25820121
[Presentation] Au/CuOx/NiOx/n-Si 2層金属酸化物構造の抵抗変化型不揮発性メモリ
- Author(s)
  岩佐太陽、塚本貴広、須田良幸
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県、平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] Si直上Ge薄膜形成におけるスパッタ電力の効果と表面平坦化の試み
- Author(s)
  塚本貴広、広瀬信光、笠松章史、三村高志、松井敏明、須田良幸
- Organizer
  第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学、札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25630123
[Presentation] Mechanism of Sn surface segregation during GeSn epitaxial growth
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  モントリオール（カナダ）
- Year and Date
  2015-05-17 – 2015-05-22
- Data Source
  KAKENHI-PROJECT-25820121
[Presentation] p-Cu2O/SiOx/n-SiC pnダイオード構造抵抗変化型メモリの低温形成技術
- Author(s)
  山下敦史、塚本貴広、須田良幸
- Organizer
  第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学（北海道、札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] GeSn薄膜形成におけるSn析出の挙動
- Author(s)
  塚本貴広，広瀬信光，笠松章史，三村高志，松井敏明，須田良幸
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25820121
[Presentation] Si直上Ge薄膜形成におけるスパッタ電力の効果と表面平坦化の試み
- Author(s)
  塚本貴広，広瀬信光，笠松章史，三村高志，松井敏明，須田良幸
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（札幌）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25820121
[Presentation] Effects of DC Sputtering Conditions on Formation of Ge Layers on Si Ssubstrates by Sputter Epitaxy method
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  ISTDM 2014
- Place of Presentation
  シンガポール（シンガポール）
- Year and Date
  2014-06-02 – 2014-06-04
- Data Source
  KAKENHI-PROJECT-25820121
[Presentation] スパッタエピタキシー法を用いたSi直上へのGeSn薄膜の形成
- Author(s)
  塚本貴広，広瀬信光，笠松章史，三村高志，松井敏明，須田良幸
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（札幌）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25820121
[Presentation] Effect of boron dopant of Si (001) substrates on growth of Ge layers using sputter epitaxy method
- Author(s)
  T. Tsukamoto, A. Kasamatsu, N. Hirose, T. Mimura, T. Matsui, Y. Suda
- Organizer
  8th International Conference on Silicon epitaxy and heterostructures
- Place of Presentation
  Centennial Hall of School of Medicine, Kyushu University, Fukuoka
- Data Source
  KAKENHI-PROJECT-25820121
[Presentation] Al/AlOx/SiCxOy/SiC/n-Si Structured Resistive Nonvolatile Memory Formed by Autoxidation of Al
- Author(s)
  Kyohei. Kida, Takahiro Tsukamoto and Yoshiyuki Suda
- Organizer
  27th Int. Microprocesses and Nanotechnology Conf.
- Place of Presentation
  ヒルトン福岡シーホーク（福岡県、福岡市）
- Year and Date
  2014-11-04 – 2014-11-07
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] スパッタエピタキシー法を用いたSi直上へのGeSn薄膜の形成
- Author(s)
  塚本貴広、広瀬信光、笠松章史、三村高志、松井敏明、須田良幸
- Organizer
  第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学、札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25630123
[Presentation] p-Cu2O/AlOx/n-SiC pnダイオード構造の抵抗変化型不揮発性メモリ
- Author(s)
  土屋充沙、山下敦史、塚本貴広、須田良幸
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県、平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26289099

1. SUDA Yoshiyuki (10226582)

# of Collaborated Projects: 4 results

# of Collaborated Products: 41 results
2. 広瀬信光 (90212175)

# of Collaborated Projects: 2 results

# of Collaborated Products: 16 results

TSUKAMOTO TAKAHIRO 塚本 貴広

TSUKAMOTO Takahiro 塚本 貴広

Research Projects

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Co-Researchers

結晶性酸化膜／半導体ヘテロ接合による量子積層構造と高周波発振素子への展開Principal Investigator

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GeSn結晶成長技術の高度化とⅣ族レーザへの展開Principal Investigator

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Development of high-frequency devices using GeSiSn/GeSn quantum wellsPrincipal Investigator

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High-performance Si/SiGe RTD with fully compressively strained SiGe of high Ge composition ratio formed by sputtering method

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Group-IV lattice-matched heterostructure and its application to high-frequency devicesPrincipal Investigator

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Development of memory diode and its application to densest array memory

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Technology of Formation of Ge Virtual Substrates by Growth of Ge Flat Films Directly on Si Using Sputter Epitaxy Method

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Formation of GeSn layers by sputter epitaxy methodPrincipal Investigator

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[Journal Article] Hole-tunneling S♪i_<0.82>♪G♪e_<0.18>♪/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/c♪m^2♪ fabricated by sputter epitaxy2024

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[Journal Article] Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method2023

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[Journal Article] Direct Growth of Patterned Ge on Insulators Using Graphene2021

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[Journal Article] Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy2021

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[Journal Article] Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth2020

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[Journal Article] Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode2020

Author(s)

TSUKAMOTO TAKAHIRO 塚本貴広

TSUKAMOTO Takahiro 塚本貴広