Machida Ryuto 町田龍人

… Alternative Names

町田龍人マチダリュウト

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Researcher Number	50806560
Affiliation (Current)	2025: 国立研究開発法人情報通信研究機構, 未来ICT研究所小金井フロンティア研究センター, 研究員 2025: 国立研究開発法人情報通信研究機構, Beyond5G研究開発推進ユニット, 研究員
Affiliation (based on the past Project Information) *help	2021 – 2023: 国立研究開発法人情報通信研究機構, 未来ICT研究所小金井フロンティア研究センター, 研究員 2020: 国立研究開発法人情報通信研究機構, 未来ICT研究所フロンティア創造総合研究室, 研究員 2017 – 2018: 東京理科大学, 基礎工学部電子応用工学科, 助教
Review Section/Research Field	Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Electron device/Electronic equipment
Keywords	Except Principal Investigator 極限性能トランジスタ / InGaSb / HEMT / テラヘルツ領域 / ナローギャップ半導体 / 遅延時間解析 / fmax / fT / 歪みバンドエンジニアリング / GaInSb … More / 電子・電気材料 / 低消費電力・高エネルギー密度 / テラヘルツ/赤外材料・素子 / 電子デバイス・機器 / 量子補正モンテカルロシミュレーション / ラフネス散乱 / InSb / 遮断周波数 / 電子移動度 / 格子歪 / 電子有効質量 / 高電子移動度トランジスタ Less

Development of Ultra-high Performance InGaSb Channel THz Transistors
- Principal Investigator
  
  Fujishiro Hiroki
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo University of Science
Development of Ultra-High Performance Sb-Based Teraherts Transistors
- Principal Investigator
  
  Fujishiro Hiroki
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Science

All 2024 2023 2022 2021 2020 2019 2018 2017

All Journal Article Presentation

[Journal Article] AlSb/GaSb バッファ層を用いたGaInSb HEMT 構造の低転位化2024
- Author(s)
  河野亮介，海老原怜央，吉田陸人，神内智揮，町田龍人，渡邊一世，山下良美，原紳介，笠松章史，遠藤聡，藤代博記
- Journal Title
  
  国立研究開発法人情報通信研究機構2023年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] 300 GHz 超fT, fmax ダブルドープ構造GaInSb HEMT2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Journal Title
  
  第71回応用物理学会春季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] InSb/Ga0.22In0.78Sb複合チャネルHEMT構造の高電子移動度化2024
- Author(s)
  神内智揮，海老原怜央，吉田陸人，河野亮介，町田龍人，渡邊一世，山下良美，原紳介，笠松章史，遠藤聡，藤代博記
- Journal Title
  
  国立研究開発法人情報通信研究機構2023年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] GaInSb HEMT のバリア層薄膜化による真性遅延時間低減2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Journal Title
  
  第71回応用物理学会春季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] GaInSb n-チャネル HEMT 構造におけるチャネル歪みの電子輸送特性への影響2023
- Author(s)
  藤代博記，遠藤聡，羽鳥小春，吉武優輔，吉田陸人，海老原怜央，町田龍人，渡邊一世，山下良美，原紳介，笠松章史
- Journal Title
  
  国立研究開発法人情報通信研究機構2022年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Reduction of Defects in GaInSb HEMT Structure by Using AlSb/GaSb Buffer2023
- Author(s)
  R. Ebihara, G. Ogane, M. Hiraoka, T. Hayashi, M. Kunisawa, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Journal Title
  
  Proc. Compound Semiconductor Week 2023 (CSW2023)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Effect of Strain in Channel on Electron Transport Properties of Ga1－xInxSb High Electron Mobility Transistor Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2023
- Author(s)
  Akira Endoh, Koharu Hatori, Naoyuki Kishimoto, Mizuho Hiraoka, Yuta Kemmochi, Yuki Endoh, Koki Osawa, Takuya Hayashi, Ryuto Machida, Issei Watanabe, Yoshimi Yamashita, Shinsuke Har
- Journal Title
  
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  
  Volume: 220 Issue: 8 Pages: 2200529-2200529
- DOI
  10.1002/pssa.202200529
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Performance Comparison of Al0.40In0.60Sb/Ga0.22In0.78Sb HEMT with Undoped- and Doped-cap Layers to Improve RF Characteristics2023
- Author(s)
  R. Machida, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, A. Endoh, H. I. Fujishiro, Y. Yamashita, S. Hara, A. Kasamatsu, I. Watanabe
- Journal Title
  
  Proc. Compound Semiconductor Week 2023 (CSW2023)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] アンドープキャップAl0.40In0.60Sb/Ga0.22In0.78Sb HEMTの特性2023
- Author(s)
  町田龍人、岸本尚之、礒前雄人、林拓也、國澤宗真、遠藤聡、藤代博記、山下良美、原紳介、笠松章史、渡邊一世
- Journal Title
  
  第84回応用物理学会秋季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022
- Author(s)
  K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Journal Title
  
  Proc. Compound Semiconductor Week 2022 (CSW2022)
  
  Volume: - Pages: 67-67
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] エピタキシャル構造に対してスケーリングを施したGaInSbチャネルHEMT2022
- Author(s)
  藤代博記、遠藤　聡、礒前雄人、吉武優輔、國澤宗真、羽鳥小春、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史
- Journal Title
  
  国立研究開発法人情報通信研究機構2021年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Development of GaInSb n-Channel HEMTs Using Experiments and Simulations2022
- Author(s)
  A. Endoh, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, K. Sawamura, T. Kawasaki, Y. Satou, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu and H. I. Fujishiro
- Journal Title
  
  Abstracts of 14th Topical Workshop on Heterostructure Microelectronics (TWHM2022)
  
  Volume: - Pages: 12-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures2021
- Author(s)
  Y. Isomae, N. Kishimoto, T. Hayashi, M. Kunisawa, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Journal Title
  
  Proc. Compound Semiconductor Week 2021 (CSW2021)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021
- Author(s)
  礒前雄人、岸本尚之、林　拓也、國澤宗真、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史、遠藤　聡、藤代博記
- Journal Title
  
  信学技報
  
  Volume: 121 Pages: 44-47
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] AlSb/GaSbバッファがGaInSb HEMTの電気的特性に与える影響2021
- Author(s)
  藤代博記、遠藤　聡、林　拓也、岸本尚之、國澤宗真、礒前雄人、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史
- Journal Title
  
  国立研究開発法人情報通信研究機構2020年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] ミリ波・テラヘルツ波帯無線通信用電子デバイスの研究開発2018
- Author(s)
  渡邊一世,山下良美,遠藤聡,原紳介,笠松章史, 吉田智洋,井上和孝,中田健,眞壁勇夫,磯野恭佑,岡直希,原田義彬,竹内淳,町田龍人,藤代博記
- Journal Title
  
  電気学会電子デバイス研究会技術報告
  
  Volume: EDD-18
- Data Source
  KAKENHI-PROJECT-16K06316
[Journal Article] アンチモン系トランジスタの開発2017
- Author(s)
  藤代博記、磯野恭佑、高橋択斗、原田義彬、岡直希、竹内淳、藤澤由衣、藤川紗千恵、町田龍人、渡邊一世、山下良美、遠藤聡、原紳介、笠松章史
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 117 Pages: 33-36
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Enhanced electron mobility in InSb/Ga0.22In0.78Sb composite channel HEMT structure2024
- Author(s)
  T. Jinnai, T. Oba, W. Nakajima, R. Ebihara, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2024 (CSW2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] High fT and fmax of double δ-doped GaInSb channel HEMTs2024
- Author(s)
  R. Kouno, R. Yoshida, R. Ebihara, T. Jinnai, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2024 (CSW2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] GaInSb HEMT のバリア層薄膜化による真性遅延時間低減2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] 300 GHz 超fT, fmax ダブルドープ構造GaInSb HEMT2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Reduction of Defects in GaInSb HEMT Structure by Using AlSb/GaSb Buffer2023
- Author(s)
  R. Ebihara, G. Ogane, M. Hiraoka, T. Hayashi, M. Kunisawa, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2023 (CSW2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] アンドープキャップAl0.40In0.60Sb/Ga0.22In0.78Sb HEMTの特性2023
- Author(s)
  町田龍人、岸本尚之、礒前雄人、林拓也、國澤宗真、遠藤聡、藤代博記、山下良美、原紳介、笠松章史、渡邊一世
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Performance Comparison of Al0.40In0.60Sb/Ga0.22In0.78Sb HEMT with Undoped- and Doped-cap Layers to Improve RF Characteristics2023
- Author(s)
  R. Machida, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, A. Endoh, H. I. Fujishiro, Y. Yamashita, S. Hara, A. Kasamatsu, I. Watanabe
- Organizer
  Compound Semiconductor Week 2023 (CSW2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022
- Author(s)
  K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2021 (CSW2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022
- Author(s)
  K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2022 (CSW2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Ｘ線回折極点図測定を用いたGaInSb HEMT構造中の双晶評価2022
- Author(s)
  海老原怜央、國澤宗真、羽鳥小春、吉田陸人、渡邊一世、町田龍人、山下良美、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Development of GaInSb n-Channel HEMTs Using Experiments and Simulations2022
- Author(s)
  A. Endoh, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, K. Sawamura, T. Kawasaki, Y. Satou, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu and H. I. Fujishiro
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics (TWHM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] GaInSb HEMT構造の電気的特性への熱処理の影響2022
- Author(s)
  吉田陸人、國澤宗真、羽鳥小春、海老原怜央、渡邊一世、町田龍人、山下良美、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] 歪超格子バッファを用いたGaInSb HEMTの電気的特性と膜厚の評価2021
- Author(s)
  國澤宗真、林　拓也、平岡瑞穂、大金剛毅、渡邊一世、山下良美、原　紳介、町田龍人、笠松章史、遠藤　聡、藤代博記
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures2021
- Author(s)
  Y. Isomae, N. Kishimoto, T. Hayashi, M. Kunisawa, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2021 (CSW2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021
- Author(s)
  礒前雄人、岸本尚之、林　拓也、國澤宗真、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  電子情報通信学会電子デバイス研究会「ミリ波・テラヘルツ波デバイス・システム」
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021
- Author(s)
  岸本尚之、礒前雄人、林　拓也、國澤宗真、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] AlSb/GaSbバッファがGaInSb HEMTの電気的特性に与える影響2020
- Author(s)
  林　拓也、平岡瑞穂、大金剛毅、國澤宗真、岸本尚之、渡邊一世、山下良美、原　紳介、町田龍人、笠松章史、遠藤　聡、藤代博記
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Improved Electron Transport Properties of Ga1-xInxSb Quantum Well Channel Using Strained-Al0.40In0.60Sb/Al1-yInySb Stepped Buffer2019
- Author(s)
  M. Hiraoka, Y. Endoh, K. Osawa, N. Kishimoto, T. Hayashi, R. Machida, A. Endoh, and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2019 (CSW2019) (16th International Symposium on Compound Simiconductor (ISCS2019) & 31th International Conference on Indium Phosphide and Related Materials (IPRM 2019))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Effects of Channel Scaling on Electron Transport Properties of Sb-based HEMTs2019
- Author(s)
  N. Kishimoto, Y. Endoh, T. Hayashi, M. Hiraoka, R. Machida, A. Endoh, and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2019 (CSW2019) (16th International Symposium on Compound Simiconductor (ISCS2019) & 31th International Conference on Indium Phosphide and Related Materials (IPRM 2019))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] GaInSbチャネルHEMT構造のゲート・チャネル間距離パラメータが電気的特性に与える影響2019
- Author(s)
  岸本尚之, 遠藤勇輝, 林拓也, 平岡瑞穂, 町田龍人, 遠藤聡, 藤代博記
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] ミリ波・テラヘルツ波帯無線通信用電子デバイスの研究開発2018
- Author(s)
  渡邊一世,山下良美,遠藤聡,原紳介,笠松章史, 吉田智洋,井上和孝,中田健,眞壁勇夫,磯野恭佑,岡直希,原田義彬,竹内淳,町田龍人,藤代博記
- Organizer
  電気学会電子デバイス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer2018
- Author(s)
  K. Osawa, M. Hiraoka, T. Kishi, Y. Endoh, J. Takeuchi, R. Machida and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2018 (CSW2018) (15th International Symposium on Compound Simiconductor (ISCS2018) & 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering2018
- Author(s)
  T. Suzuki, Y. Fujisawa, S. Kawamura, K. Kumasaka, R. Machida, and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2018 (CSW2018) (15th International Symposium on Compound Simiconductor (ISCS2018) & 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] アンチモン系トランジスタの開発2017
- Author(s)
  藤代博記、磯野恭佑、高橋択斗、原田義彬、岡直希、竹内淳、藤澤由衣、藤川紗千恵、町田龍人、渡邊一世、山下良美、遠藤聡、原紳介、笠松章史
- Organizer
  電子デバイス研究会-ミリ波・テラヘルツ波デバイス・システム-
- Invited
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] LT-AlSb成長がInSb HEMT構造の電気的特性に与える影響2017
- Author(s)
  遠藤勇輝, 原田義彬, 竹内淳, 岩木拓也, 町田龍人, 藤代博記
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] InSb-based HEMTs fabricated by using two-step-recessed gate procedure2017
- Author(s)
  N. Oka, K. Isono, Y. Harada, J. Takeuchi, T. Iwaki, Y. Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, R. Machida, A. Kasamatsu and H. I. Fujishiro
- Organizer
  12th Topical Workshop on Heterostructure Microelectronics (TWHM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316

1. Fujishiro Hiroki (60339132)

# of Collaborated Projects: 2 results

# of Collaborated Products: 42 results
2. 藤川紗千恵 (90550327)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
3. 遠藤聡 (60417110)

# of Collaborated Projects: 1 results

# of Collaborated Products: 32 results
4. 渡邊一世 (20450687)

# of Collaborated Projects: 1 results

# of Collaborated Products: 32 results

Machida Ryuto 町田 龍人

町田 龍人 マチダ リュウト

Research Projects

Research Products

Co-Researchers

Development of Ultra-high Performance InGaSb Channel THz Transistors

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Development of Ultra-High Performance Sb-Based Teraherts Transistors

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[Journal Article] AlSb/GaSb バッファ層を用いたGaInSb HEMT 構造の低転位化2024

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[Journal Article] 300 GHz 超fT, fmax ダブルドープ構造GaInSb HEMT2024

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[Journal Article] InSb/Ga0.22In0.78Sb複合チャネルHEMT構造の高電子移動度化2024

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[Journal Article] GaInSb HEMT のバリア層薄膜化による真性遅延時間低減2024

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[Journal Article] GaInSb n-チャネル HEMT 構造におけるチャネル歪みの電子輸送特性への影響2023

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[Journal Article] Reduction of Defects in GaInSb HEMT Structure by Using AlSb/GaSb Buffer2023

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[Journal Article] Effect of Strain in Channel on Electron Transport Properties of Ga1－xInxSb High Electron Mobility Transistor Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2023

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DOI

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[Journal Article] Performance Comparison of Al0.40In0.60Sb/Ga0.22In0.78Sb HEMT with Undoped- and Doped-cap Layers to Improve RF Characteristics2023

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[Journal Article] アンドープキャップAl0.40In0.60Sb/Ga0.22In0.78Sb HEMTの特性2023

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[Journal Article] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022

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[Journal Article] エピタキシャル構造に対してスケーリングを施したGaInSbチャネルHEMT2022

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[Journal Article] Development of GaInSb n-Channel HEMTs Using Experiments and Simulations2022

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[Journal Article] Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures2021

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[Journal Article] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021

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[Journal Article] AlSb/GaSbバッファがGaInSb HEMTの電気的特性に与える影響2021

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Journal Title

Data Source

[Journal Article] ミリ波・テラヘルツ波帯無線通信用電子デバイスの研究開発2018

Author(s)

Machida Ryuto 町田龍人

町田龍人マチダリュウト