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遠藤 敏明  エンドウ トシアキ

ORCIDConnect your ORCID iD *help
Researcher Number 60002903
Affiliation (based on the past Project Information) *help 1996: 室蘭工業大学, 工学部, 助手
1994: 室蘭工業大学, 工学部, 助手
Review Section/Research Field
Except Principal Investigator
Electronic materials/Electric materials
Keywords
Except Principal Investigator
絶縁破壊特性 / 電子捕獲 / 急速熱処理 / 極薄シリコン酸化膜 / シリコン酸窒化膜 / 酸窒化膜 / 界面準位密度 / 一酸化二窒素 / シリコン酸化膜
  • Research Projects

    (2 results)
  • Co-Researchers

    (2 People)
  •  N_2O酸窒化急速熱処理による高性能極薄シリコン酸化膜の形成

    • Principal Investigator
      野村 滋
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Muroran Institute of Technology
  •  N_2O酸窒化急速熱処理による高性能極薄シリコン酸化膜の形成

    • Principal Investigator
      野村 滋
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Muroran Institute of Technology
  • 1.  野村 滋 (10002859)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 2.  福田 永 (10261380)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results

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