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MATSUURA Takashi  松浦 孝

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… Alternative Names

松浦 学  マツウラ マナブ

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Researcher Number 60181690
Other IDs
External Links
Affiliation (based on the past Project Information) *help 2003: Tohoku University, Research Institute of Electrical Communication, Assistant Professor, 電気通信研究所, 助教授
1993 – 2001: TOHOKU UNIVERSITY, RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION, ASSOCIATE PRO, 電気通信研究所, 助教授
1991 – 1992: 東北大学, 工学部, 助手
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / 電子材料工学
Except Principal Investigator
Electronic materials/Electric materials / Applied materials science/Crystal engineering / 電子デバイス・機器工学 / 電子材料工学 / Science and Engineering
Keywords
Principal Investigator
ECRプラズマ / ECR Plasma / ラングミュア吸着 / 原子層エッチング / Ultrasmall MOS / Silicon / 分数原子層 / イオン誘起反応 / 自己制限 / Si … More / 極微細MOS / ゲルマニウム / 低エネルギーAr^+イオン照射 / シリコン / 自己制限型吸着 / Germanium / Low-Energy Ion Irradiation / Chlorine / Self-Limited / Atomic-Layr-Etching / 低エネルギーイオン照射 / 塩素 / 自己制限型 / germanium / Low-Energy-Ar^+ Ion Irradiation / ECR chlorine plasma / Substrate Orientation Dependence / Self-Limited Adsorption / Atomic-Layr Etching / ECR塩素プラズマ / 面方位依存性 / Ion Irradiation / Radical / Adsorption & Reaction / Epitaxy / Etching / Plasma CVD / Selectivity / イオン照射 / ラジカル / 吸着・反応 / エピタキシ / エッチング / プラズマCVD / 選択性 / Nitrogen Addition / Ultraclean / Selective Epitaxy / Anisotropy / Perfect Selectivity / Etching Delay Time / Langmuir's Adsorption / 窒素添加効果 / 超高清浄化 / 選択エピタキシ / 異方性 / 完全選択性 / エッチング遅れ時間 / XPS / 高清浄雰囲気 / 表面吸着・反応 / Arイオン照射 / 励起水素 / Si窒化膜 … More
Except Principal Investigator
CVD / 原子層成長 / IV族半導体 / SiGeC / SiGe / 極微細デバイス / Si / ヘテロ構造 / 原子層エッチング / 原子層 / シリコン / HBT / MOS / ドーピング / 水素終端 / SiH_4 / B / P / atomic layer / N / C / Ge / CMOS / SOI / Impurity Doping / GeH_4 / MOSFET / ヘテロデバイス / ゲルマニウム / 高選択異方性エッチング / 不純物拡散 / in-situ不純物ドーピング / CVD低温選択成長 / 不純物ドーピング / 低温ヘテロエピタキシャル成長 / ラングミュア吸着・反応 / W低温選択成長 / 表面水素終端 / ラングミュア吸着 / 一原子層熱窒化 / contact resistance / impurity doping / IV group semiconductor / CDV / IV族半導体結晶 / 半導体接触抵抗 / 金属 / heterostructure / resonant tunneling diode / テヘロ構造 / 共鳴トンネルダイオード / High Selective Anisotropic Etching / Impurity Diffusion / in-situ Impurity Doping / CVD Low-Temperature Selective Growth / hot carrier / low-frequency noise / high speed / low power / hetero-structure / 極浅ソース・ドレイン / チャージポンピング法 / ヘテロ界面準位 / ホットキャリア / 低周波雑音 / 超高速 / 低消費電力 / Low-Temperature Heteroepitaxial Growth / Hydrogen Termination / Atomic-Layer Etching / Atomic-Layer Growth / Ultrasmall Devices / Group IV Semiconductor / Langmuir-type Adsorption and Reaction / 表面処理 / Langmuir-type Adsorption / Low Temperature Selective Deposition of W / Ultra small Devices / Plasma Surface Treatment / Flash Heating CVD / Si-Based Superlattice Devices / Atomically Controlling CVD / Si極薄窒化膜 / ド-ピング制御 / 超微細MOSFET / Langmuir型吸着 / 不純物ド-ピング / プラズマ表面処理 / 瞬時加熱CVD法 / Si系超格子デバイス / 原子制御CVD装置 / Resonant Tunneling / Flash Heating / Chemical Vapor Deposition / Atomic Layr Epitaxy / エピタキシャル成長 / 集積回路 / 共鳴トンネル / 瞬時加熱 / Ultrasmall Device / Heterodevice / Heterostructure / Silicon-Germanium / Silicon / 超微細デバイス / シリコン-ゲルマニウム / ラングミュア型 / ボロン / リン / エピタキシャル / 高精度エッチング / 選択成長 / WF_6 / ド-ピング / タングステン / W低温選択的成長 Less
  • Research Projects

    (19 results)
  • Co-Researchers

    (14 People)
  •  Formation of Very Low Contact Resistance between Metal and Semiconductor using Semiconductor Structures with Ultra High Carrier Concentration

    • Principal Investigator
      MUROTA Junichi
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tohoku University
  •  Fabrication of Resonant Tunneling Diode by Atomic Layer-by-Layer Epitaxial Growth of Si-Ge-C-N System

    • Principal Investigator
      SAKURABA Masao
    • Project Period (FY)
      2000 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発

    • Principal Investigator
      室田 淳一
    • Project Period (FY)
      1999 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Tohoku University
  •  Si-Ge系エピタキシャル成長による超高濃度不純物半導体の形成とその物性

    • Principal Investigator
      室田 淳一
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  Research on extremely low-power and scaled Si-based CMOS devices making the best use of SiGe and SOI

    • Principal Investigator
      TSUCHIYA Toshiaki
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Shimane University
  •  Development of SiGe System MOS-HBT Technology for Fabrication of High Integrated Communication System

    • Principal Investigator
      MUROTA Junichi
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Tohoku University
  •  IV族半導体極微細構造形成プロセスに関する研究

    • Principal Investigator
      室田 淳一
    • Project Period (FY)
      1998
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Tohoku University
  •  Si系アモルファス絶縁薄膜の表面構造敏感エッチングと原子制御Principal Investigator

    • Principal Investigator
      松浦 孝
    • Project Period (FY)
      1998
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tohoku University
  •  IV族半導体薄膜へのタングステンのデルタド-ピング

    • Principal Investigator
      室田 淳一
    • Project Period (FY)
      1997
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  IV族半導体極微細構造形成プロセスに関する研究

    • Principal Investigator
      MUROTA Junichi
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tohoku University
  •  IV族半導体極微細構造形成プロセスに関する研究

    • Principal Investigator
      室田 淳一
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tohoku University
  •  Langmuir Adsorption and Reaction Control in Process for Fabrication of Ultrasmall Group IV Semiconductor Devices

    • Principal Investigator
      MUROTA Junichi
    • Project Period (FY)
      1996 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      TOHOKU UNIVERSITY
  •  Development of Atomically Controlling CVD Apparatus for Fabrication of Si-Based Superlattice Devices

    • Principal Investigator
      MUROTA Junichi
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      TOHOKU UNIVERSITY
  •  A Study on Elementary Process of Self-limited Surface Adsorption and Reaction Si Atomic Layr EtchingPrincipal Investigator

    • Principal Investigator
      MATSUURA Takashi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      TOHOKU UNIVERSITY
  •  A Development of Atomic Layr Etching Technology of Si with Self-limited Mechanism for Directional Ultrafine Pattern FabricationPrincipal Investigator

    • Principal Investigator
      MATSUURA Takashi
    • Project Period (FY)
      1994 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      TOHOKU UNIVERSITY
  •  A STUDY OF ULTRASMALL DEVICE CONTAINING NANOMETER-CONTROLLED Si-Ge HETEROLAYER

    • Principal Investigator
      MUROTA Junichi
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      TOHOKU UNIVERSITY
  •  STUDY ON DEVELOPMENT OF ATOMIC LAYER CONTROLLED CVD APPARATUS FOR FABRICATION PROCESS OF EXTREMELY LARGE SCALE INTEGRATED CIRCUITS

    • Principal Investigator
      MUROTA Junnichi
    • Project Period (FY)
      1992 – 1994
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      TOHOKU UNIVERSITY
  •  Selectivity inversion in plasma processing at low temperaturesPrincipal Investigator

    • Principal Investigator
      MATSUURA Takashi
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Tohoku University
  •  DEVELOPMENT OF ANISOTROPIC ETCHING TECHNOLOGY WITH PERFECT SELECTIVITY USING LANGMUIR'S ADSORPTION LAYERPrincipal Investigator

    • Principal Investigator
      MATSUURA Takashi
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      TOHOKU UNIVERSITY
  • 1.  MUROTA Junichi (70182144)
    # of Collaborated Projects: 19 results
    # of Collaborated Products: 0 results
  • 2.  SAKURABA Masao (30271993)
    # of Collaborated Projects: 10 results
    # of Collaborated Products: 0 results
  • 3.  ONO Shoichi (00005232)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 4.  SAWADA Yasuji (80028133)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 5.  TSUCHIYA Toshiaki (20304248)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 6.  OHMI Tadahiro (20016463)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 7.  MEGURO Toshiyasu (50182150)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 8.  栗野 浩之 (70282093)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  小柳 光正 (60205531)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  SATO Taketoshi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  NAKAMURA Naoto
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  KUROKAWA Harushige
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  杉山 直治
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  山本 裕司
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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