INOUE Tomoyasu 井上知泰

Researcher Number	60193596
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2008 – 2016: Iwaki Meisei University, 科学技術学部, 教授 1995 – 2000: いわき明星大学, 理工学部, 教授
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Applied materials science/Crystal engineering / Thin film/Surface and interfacial physical properties Except Principal Investigator Applied materials science/Crystal engineering
Keywords	Principal Investigator 電子ビーム照射 / 複合面方位 / 表面界面物性 / 方位選択エピタキシ / 表面・界面物性 / 超薄膜 / 結晶成長 / 方位選択エピタキシャル成長 / 薄膜 / Electron Beam Irradiation … More / Epitaxial Growth / Silicon / Cerium Dioxide / シリコン / 絶縁物薄膜 / イオン化蒸着 / ヘテロエピタキシ / 二酸化セリウム(CeO_2) / 表面海面物性 / トレンチ / 絶縁層上シリコン膜(SOI) / 方位選択エピタキシー / 極薄膜 / 複合面方位構造 / エピタキシャル成長 / 吸収電流像 / 反応性スパッタ / エピタキシ / 方位選択成長 … More Except Principal Investigator IBIEC / SOI / SiGe / CeO_2 / Ion Beam Sputtering / Interface Reaction / Amorphous Silicon / Hetro Epitaxy / 核的散乱 / イオンの電子 / 固相エピタキシ / ランプ加熱 / イオンビームスパッタ / 界面反応 / アモルファスシリコン / イオンビーム誘起結晶化 / ヘテロエピタキシ Less

Perfect separation between different orientation regions in hybrid orientation structure grown by orientation selective epitaxyPrincipal Investigator
- Principal Investigator
  
  Inoue Tomoyasu
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Iwaki Meisei University
Hybrid orientation structure formation by electron beam induced orientation selective epitaxial growthPrincipal Investigator
- Principal Investigator
  
  INOUE Tomoyasu
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Iwaki Meisei University
Study on two dimensional control of orientation selective epitaxial growth of oxide thin filmsPrincipal Investigator
- Principal Investigator
  
  INOUE Tomoyasu
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Iwaki Meisei University
Epitaxial growth of Si on Insulator using Ion Beam Induced Epitaxial Crystallization
- Principal Investigator
  
  YAMAMOTO Yasuhiro
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hosei University
Epitaxial Growth of CeO_2(110) Layrs on Si(100) SubstratesPrincipal Investigator
- Principal Investigator
  
  INOUE Tomoyasu
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Iwaki Meisei University

All 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 Other

All Journal Article Presentation Book Patent

[Book] Oxide Thin Film Technology Kelara, India2010
- Author(s)
  T. Inoue, T. Chikyow
- Total Pages
  174
- Publisher
  Transworld Research Network, Trivandrum
- Data Source
  KAKENHI-PROJECT-20560024
[Book] Orientation Selectivity Control by Surface Potential Modification in Oxide Thin Film Epitaxial Growth New York2009
- Author(s)
  T. Inoue
- Publisher
  Nova Science Publishers Inc.
- Data Source
  KAKENHI-PROJECT-20560024
[Book] Recent Advances in Dielectric Materials(全19章の内、第4章34頁分を執筆)2009
- Author(s)
  T.Inoue
- Total Pages
  792
- Publisher
  Nova Science Publishers Inc., New York
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] An Overview of Studies on Epitaxial Growth of CeO2 Layers on Si Substrates2017
- Author(s)
  T. Inoue, S. Shida and N. Sakamoto
- Journal Title
  
  いわき明星大学科学技術学部研究紀要
  
  Volume: 30 Pages: 3-10
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26390067
[Journal Article] Perfect Separation of Hybrid Orientation Structure of CeO2(100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches2016
- Author(s)
  T. Inoue and S. Shida
- Journal Title
  
  ECS J. Solid State Sci. Technol.
  
  Volume: 5 Issue: 12 Pages: N97-N101
- DOI
  10.1149/2.0161612jss
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26390067
[Journal Article] Perfect Separation of Hybrid Orientation Structure of CeO2(100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches2016
- Author(s)
  T. Inoue and S. Shida
- Journal Title
  
  ECS Trans.
  
  Volume: 72 Issue: 19 Pages: 35-45
- DOI
  10.1149/07219.0035ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26390067
[Journal Article] Development in Hybrid Orientation Technology by Electron Beam Induced Orientation Selective Epitaxial Growth2016
- Author(s)
  Tomoyasu Inoue and Shigenari Shida
- Journal Title
  
  いわき明星大学科学技術学部研究紀要
  
  Volume: 28 Pages: 9-17
- NAID
  40020414517
- Data Source
  KAKENHI-PROJECT-26390067
[Journal Article] HIghly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy2014
- Author(s)
  Tomoyasu Inoue and Shigenari Shida
- Journal Title
  
  J. Vac.Sci. Technol.
  
  Volume: 32
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26390067
[Journal Article] Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy2014
- Author(s)
  T. Inoue and S. Shida
- Journal Title
  
  J. Vac. Sci. Technol. B
  
  Volume: 32 Issue: 3
- DOI
  10.1116/1.4863301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Hybrid orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates2013
- Author(s)
  T. Inoue and S. Shida
- Journal Title
  
  Proc. 12th International Symposium on Sputtering and Plasma Processes
  
  Volume: 12 Pages: 87-90
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Hybrid Orientation Selective Orientation Epitaxial Growth of CeO_2(100) and (110) Regions on Si(100) Sub- strates2013
- Author(s)
  T. Inoue and S. Shida
- Journal Title
  
  Proc. 12th International Symposi- um on Sputtering & Plasma Processes
  
  Pages: 87-90
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Hybrid Orientation Substrate Fabrication using Electron Beam induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Layers on Si(100) Substrates2012
- Author(s)
  T. Inoue and S. Shida
- Journal Title
  
  Electrochemical Society Transaction
  
  Volume: 45 Pages: 443-451
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Spatially varied orientation selective epitaxial growth of Ce2(100) and (110) regions on Si(100) substrates by reactive magnetron sputtering utilizing electron beam irradiation2012
- Author(s)
  Tomoyasu Inoue and Shigenari Shida
- Journal Title
  
  Thin Sokid Films
  
  Volume: 520 Pages: 6179-6182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Spacially Varied Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Sub- strates by Reactive Magnetron Sputtering Utilizing Electron Beam Irradiation2012
- Author(s)
  T. Inoue and S. Shida
- Journal Title
  
  Thin Solid Films
  
  Volume: 520 Pages: 6179-6182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Two Dimensional Control of Electron Beam Induced Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Regions on Si(100) Substrates2011
- Author(s)
  T. Inoue, N. Igarashi, Y. Kanno and S. Shida
- Journal Title
  
  Thin Solid Films
  
  Volume: 519 Pages: 5775-5779
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Two dimensional control of electron beam induced orientation selective epitaxial growth of (100) and (110) CeO2 regions on Si(100) substrates2011
- Author(s)
  Tomoyasu Inoue and Shigenari Shida
- Journal Title
  
  Thin Solid Films
  
  Volume: 519 Pages: 5775-5779
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Two Dimensional Control of Electron Beam Induced Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Regions on Si(100) Substrates2011
- Author(s)
  T.Inoue, N.Igarashi, Y.Kanno, S.Shida
- Journal Title
  
  Thin Solid Films
  
  Volume: 519 Pages: 5775-5779
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Two Dimensional Control of Electron Beam Induced Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Regions on Si (100) Substrates2011
- Author(s)
  T. Inoue, N. Igarashi, Y. Kanno, S. Shida
- Journal Title
  
  Thin Solid Films
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Spatially Varied Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Layers on Si(100) Substrates using Absorbed Electron Imaging System2011
- Author(s)
  T.Inoue, H.Ohtake, J.Otani, S.Shida
- Journal Title
  
  いわき明星大学科学技術学部研究紀要
  
  Volume: 24 Pages: 1-6
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Spatially Varied Orientation Selective Epi- taxial Growth of (100) and (110) CeO_2 Layers on Si(100) Substrates using Absorbed Elec- tron Imaging System2011
- Author(s)
  T. Inoue, H. Ohtake, J. Otani and S. Shida
- Journal Title
  
  いわき明星大学科学技術学部研究紀要
  
  Volume: 24 Pages: 1-8
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Spatially Varied Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Layers on Si(100) Substrates using Absorbed Electron Imaging System2011
- Author(s)
  T. Inoue, H. Ohtake, J. Otani, S. Shida
- Journal Title
  
  いわき明星大学科学技術学部研究紀要 24
  
  Pages: 1-6
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Hybrid Orientation Substrate Fabrication using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Substrates by Reactive Magnetron Sputtering2011
- Author(s)
  T. Inoue and S. Shida
- Journal Title
  
  Proc. 4th Int. Conf. Advanced Plasma Technol.
  
  Pages: 168-170
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Hybrid orientation substrate fabrication using electron beam induced orientation selective epitaxial growth of CeO2(100) and (110) areas on Si(100) substrates by reactive magnetron sputtering2011
- Author(s)
  Tomoyasu Inoue and Shigenari Shida
- Journal Title
  
  Proceedings of 4th International Conference on Advanced Plasma Technologies
  
  Volume: - Pages: 168-170
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560028
[Journal Article] Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100)/Si(100) Structures using Absorption Electron Imaging System2009
- Author(s)
  T. Inoue, S. Shida
- Journal Title
  
  Electrochem.Soc.Trans. 25
  
  Pages: 187-197
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100)/Si(100)Structures using Absorption Electron Imaging System2009
- Author(s)
  T.Inoue, S.Shida
- Journal Title
  
  Electrochem.Soc.Trans. 25
  
  Pages: 187-197
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of C_eO_2(100)/Si(100) Structures2008
- Author(s)
  T. Inoue, H. Ohtake, J. Ota ni, S. Shida
- Journal Title
  
  Electrochem. Soc. Trans. 13
  
  Pages: 341-351
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Electron Beam Induced Orientation Selective Epitaxial Growth of C_eO_2(100) Layers on Si(100)Substrates by dc Magnetron Sputtering2008
- Author(s)
  T. Inoue, Y. Nakata, S. Shida
- Journal Title
  
  J. Phys. Conf. Ser. 100
  
  Pages: 82014-82014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of C_eO_2(100)/Si(100)Structures2008
- Author(s)
  T. Inoue, H. Ohtake, J. Ota ni, S. Shida
- Journal Title
  
  J. Electrochem. Soc. 155
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2 (100) Layers on Si(100)/Si(100) Structures2008
- Author(s)
  T. Inoue, H. Ohtake, J. Otani, S. Shida
- Journal Title
  
  Electrochem.Soc.Trans. 13
  
  Pages: 341-351
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Optimization of Growth Parameters in Electron Beam Induced Orientation Selec-tive Epi-taxial Growth of CeO_2(100)/Si(100) Structures2008
- Author(s)
  T. Inoue, H. Ohtake, J. Otani, S. Shida
- Journal Title
  
  J.Electrochem.Soc. 155
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560024
[Journal Article] Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2 (100) Layers on Si (100) Substrates by Reactive Magnetron Sputtering2008
- Author(s)
  T. Inoue, Y. Nakata, S. Shida
- Journal Title
  
  J.Phys.Conf.Ser. 100
  
  Pages: 82014-82014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560024
[Patent] Semiconductor device and manufactur-ing method thereof2008
- Inventor(s)
  Ichiro Mizushima, Tomoyasu Inoue
- Industrial Property Rights Holder
  Toshiba Corp.
- Filing Date
  2008-01-10
- Overseas
- Data Source
  KAKENHI-PROJECT-20560024
[Patent] 半導体装置及びその製造方法2007
- Inventor(s)
  水島一郎、井上知泰
- Industrial Property Rights Holder
  (株)東芝
- Patent Publication Number
  2008-160086
- Filing Date
  2007-11-22
- Data Source
  KAKENHI-PROJECT-20560024
[Patent] 半導体装置及びその製造方法2006
- Inventor(s)
  水島一郎、井上知泰
- Industrial Property Rights Holder
  (株)東芝
- Patent Publication Number
  2008-160086
- Filing Date
  2006-11-30
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] Si(100)基板上の複合面方位CeO2領域間の分SOI 基板を用いた Si(100) 上の複合面方位CeO2 領域間の完全分離2017
- Author(s)
  井上知泰、信田重成
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26390067
[Presentation] Perfect Separation of Hybrid Orientation Structure of CeO2(100) and (110) Regions Grown on SOI Substrates with Lithographically Formed Trenches2016
- Author(s)
  T. Inoue and S. Shida
- Organizer
  229th ECS Meeting
- Place of Presentation
  San Diego, CA USA
- Year and Date
  2016-05-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390067
[Presentation] Hybrid Orientation Structure of CeO2(100) and (110) Regions on SOI Substrates with Lithographically Formed Trenches2016
- Author(s)
  T. Inoue and S. Shida
- Organizer
  European Materials Research Society Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2016-09-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390067
[Presentation] SOI基板を用いたSi(100)上の複合面方位CeO2領域間の完全分離2016
- Author(s)
  井上知泰、信田重成
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26390067
[Presentation] Perfect Isolation of Hybrid Orientation Structure Fabricated on SOI Substrates with Lithographically Formed Trenches2015
- Author(s)
  Tomoyasu Inoue and Shigenari Shida
- Organizer
  European Materials Research Society Spring Meeting
- Place of Presentation
  Lille, France
- Year and Date
  2015-05-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390067
[Presentation] Hybrid Orientation Structure of CeO2(100) and (110) Regions on SOI Substrates with Lithographically Formed Trenches2015
- Author(s)
  Tomoyasu Inoue and Shigenari Shida
- Organizer
  31st European Conference on Surface Science
- Place of Presentation
  Barcelona, Spain
- Year and Date
  2015-08-31
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390067
[Presentation] Si(100)基板上の複合面方位CeO2領域間の分離2014
- Author(s)
  井上知泰、信田重成
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Si(100)基板上の複合面方位CeO_2領域間の分離2014
- Author(s)
  井上知泰、信田重成
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Hybrid Orientation Substrate Fabrication using Electron Beam induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Areas on Si(100) Substrates by Reactive Magnetron Sputtering2013
- Author(s)
  T. Inoue and S. Shida
- Organizer
  15th International Conference on Solid Surfaces
- Place of Presentation
  Kyoto Research Park
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Hybrid Orientation Structure of CeO_2(100) and (110) Regions on Si(100) Substrates Formed by Orientation Selective Epitaxial Growth2013
- Author(s)
  T. Inoue and S. Shida
- Organizer
  15th Inter- national Conference on Solid Surfaces
- Place of Presentation
  Paris , France
- Year and Date
  2013-09-11
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Hybrid orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates2013
- Author(s)
  T. Inoue and S. Shida
- Organizer
  12th International Symposium on Sputtering and Plasma Processes
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Hybrid Orientation Substrate Fabrication using Electron Beam induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Areas on Si(100) Substrates by Reactive Magnetron Sputtering2013
- Author(s)
  T. Inoue and S. Shida
- Organizer
  12th International Symposium on Sputtering and Plasma Processes
- Place of Presentation
  Palais des Congres de Paris
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Si(100)基板上の複合面方位CeO_2層の形成2013
- Author(s)
  井上知泰、信田重成
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-27
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Hybrid Orientation Structure of CeO_2(100) and (110) Regions on Si(100) Substrates2013
- Author(s)
  T. Inoue and S. Shida
- Organizer
  12th International Symposium on Sputtering & Plasma Processes
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2013-07-10
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Hybrid orientation structure of CeO2(100) and (110) regions on Si(100) substrates formed by orientation selective epitaxial growth2013
- Author(s)
  T. Inoue and S. Shida
- Organizer
  15th International Conference on Solid Surfaces
- Place of Presentation
  Paris, France
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Si(100)基板上の複合面方位CeO2層の形成 -遷移領域幅の縮小 -2012
- Author(s)
  井上知泰、信田重成
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Si(100)基板上の複合面方位CeO2層の形成2012
- Author(s)
  井上知泰, 信田重成
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Hybrid Orientation Substrate Fabrication using Electron Beam induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Layers on Si(100) Substrates2012
- Author(s)
  T. Inoue and S. Shida
- Organizer
  221st Electrochemical Society Meeting
- Place of Presentation
  Washington State Convention Center (Seattle)
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Si(100) 基板上の複合面方位CeO2 層の形成{基板比抵抗依存性{2012
- Author(s)
  井上知泰, 信田重成
- Organizer
  第59 回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Hybrid Orientation Structure Fabrication using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Substrates2012
- Author(s)
  T. Inoue and S. Shida
- Organizer
  Electrochemical Soci- ety 221st Meeting
- Place of Presentation
  Seattle, WA USA
- Year and Date
  2012-05-08
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Si(100)基板上の複合面方位CeO_2層の形成―遷移領域幅の縮小―2012
- Author(s)
  井上知泰、信田重成
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Si(100)基板上の複合面方位CeO_2 層の形成2011
- Author(s)
  井上知泰、信田重成
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] Spacially Varied Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Substrates by Reactive Magnetron Sputtering Utilizing Electron Beam Irradiation2011
- Author(s)
  T. Inoue and S. Shida
- Organizer
  American Vacuum Society 58th International Symposium
- Place of Presentation
  Nashville, TN USA
- Year and Date
  2011-11-01
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Spatially varied orientation selective epitaxial growth of CeO2(100) and (110) areas on Si(100) substrates by reactive magnetron sputtering utilizing electron beam irradiation2011
- Author(s)
  Tomoyasu Inoue and Shigenari Shida
- Organizer
  Ameriacn Vacuum Society 58th International Symposium
- Place of Presentation
  Nashville, TN, USA
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Si(100)基板上の複合面方位CeO2層の形成 -遷移領域幅の縮小 -2011
- Author(s)
  井上知泰、信田重成
- Organizer
  第72回応用物理学学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Si(100)基板上の複合面方位CeO_2層の形成-基板比抵抗依存性-2011
- Author(s)
  井上知泰、信田重成
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] Si(100)基板上の複合面有, 519, 2011, 5775-5779.方位CeO_2層の形成―遷移領域幅の縮小―2011
- Author(s)
  井上知泰、信田重成
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Hybrid Orientation Structure Fabrication using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Substrates Reactive Magnetron Sputtering2011
- Author(s)
  T. Inoue and S. Shida
- Organizer
  4th International Conference on Advanced Plasma Technologies
- Place of Presentation
  Strunjan, Slovenia
- Year and Date
  2011-09-11
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] Hybrid orientation substrate fabrication using electron beam induced orientation selective epitaxial growth of CeO2(100) and (110) areas on Si(100) substrates by reactive magnetron sputtering2011
- Author(s)
  Tomoyasu Inoue and Shigenari Shida
- Organizer
  4th International Conference on Advanced Plasma Technologies
- Place of Presentation
  Strunjan, Slovenia
- Data Source
  KAKENHI-PROJECT-23560028
[Presentation] 電子ビーム誘起方位選択エピタキシャル成長によるSi(100)基板上の複合面方位CeO_2層の形成II2010
- Author(s)
  井上知泰、信田重成
- Organizer
  第71回応用物理学学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] Two Dimensional Control of Electron Beam Induced Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Regions on Si (100) Substrates2010
- Author(s)
  井上知泰, 五十嵐永将, 菅野雄樹, 信田重成
- Organizer
  European Mat.Res.Soc.2010 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2010-06-08
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] 電子ビーム誘起方位選択エピタキシャル成長によるSi(100)基板上の複合面方位CeO_2層の形成2010
- Author(s)
  井上知泰、信田重成
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川県平塚市、東海大学
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] 電子ビーム誘起方位選択エピタキシャル成長によるSi(100)基板上の複合面方位CeO_2層の形成2010
- Author(s)
  井上知泰、五十嵐永将、菅野雄樹、信田重成
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] Two Dimensional Control of Electron Beam Induced Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Regions on Si(100) Substrates2010
- Author(s)
  T.Inoue, N.Igarashi, Y.Kanno, S.Shida
- Organizer
  European Research Society 2010 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2010-06-08
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] 電子ビーム誘起方位選択エピタキシャル成長へのAEI観察の応用II2009
- Author(s)
  井上知泰、信田重成
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] 電子ビーム誘起方位選択エピタキシャル成長によるCeO_2(100)/Si(100)構造の形成2009
- Author(s)
  井上知泰、信田重成
- Organizer
  第69回応用物理学学術講演会
- Place of Presentation
  富山県富山市、富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] 電子ビーム誘起方位選択エピタキシャル成長へのAEI観察の応用2009
- Author(s)
  井上知泰、信田重成
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  茨城県つくば市、筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100)/Si(100)Structrues using Absorption Electron Imaging System2009
- Author(s)
  T.Inoue, S.Shida
- Organizer
  216th Electrochemical Society Meeting
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] 電子ビーム誘起方位選択エピタキシャル成長へのAEI観察の応用2009
- Author(s)
  井上知泰、大竹秀幸、大谷純一郎、信田重成
- Organizer
  第56 回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] Effect of Electron Incidence in Epitaxial Growth of CeO_2 (100) Layers on Si (100) Substrates2009
- Author(s)
  井上知泰, 信田重成
- Organizer
  216th Electro chem.Soc.Meeting
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-05
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] 電子ビーム誘起方位選択エピタキシャル成長へのAEI観察の応用2009
- Author(s)
  井上知泰, 信田重成
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] 電子ビーム誘起方位選択エピタキシャルCeO_2(100)/Si(100)構造の成長条件最適化II2008
- Author(s)
  井上知泰、信田重成
- Organizer
  第69回応用物理学学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of C_eO_2(100)/Si(100) Structures2008
- Author(s)
  T. Inoue, H. Ohtake, J. Otani, S. Shida
- Organizer
  213th Electrochemical Society Meeting
- Place of Presentation
  Phoenix, AZ USA
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] 電子ビーム誘起方位選択エピタキシャルCe02(100)/Si(100)構造の成長条件最適化II2008
- Author(s)
  井上知泰, 信田重成
- Organizer
  第69回応用物理学学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2 (100) Layers on Si(100)/Si(100) Structures2008
- Author(s)
  井上知泰, 大竹秀幸, 大谷純一郎, 信田重成
- Organizer
  213th Electrochem.Soc.Meeting
- Place of Presentation
  Phoenix, AZ USA
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-20560024
[Presentation] Hybrid orientation structure fabrication on SOI substrates using orientation selective epitaxy
- Author(s)
  Tomoyasu Inoue and Shigenari Shida
- Organizer
  Science & Application of Thin Films Conference & Exhibition
- Place of Presentation
  Cesme, Izmir, Turkey
- Year and Date
  2014-09-15 – 2014-09-19
- Data Source
  KAKENHI-PROJECT-26390067
[Presentation] Si(100)基板上の複合面方位CeO2領域間の分離
- Author(s)
  井上知泰、信田重成
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学　湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26390067

1. YAMAMOTO Yasuhiro (50139383)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. SATOH Masataka (40215843)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

INOUE Tomoyasu 井上 知泰

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Perfect separation between different orientation regions in hybrid orientation structure grown by orientation selective epitaxyPrincipal Investigator

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Hybrid orientation structure formation by electron beam induced orientation selective epitaxial growthPrincipal Investigator

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Study on two dimensional control of orientation selective epitaxial growth of oxide thin filmsPrincipal Investigator

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Epitaxial growth of Si on Insulator using Ion Beam Induced Epitaxial Crystallization

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Epitaxial Growth of CeO_2(110) Layrs on Si(100) SubstratesPrincipal Investigator

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[Book] Oxide Thin Film Technology Kelara, India2010

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[Book] Orientation Selectivity Control by Surface Potential Modification in Oxide Thin Film Epitaxial Growth New York2009

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[Book] Recent Advances in Dielectric Materials(全19章の内、第4章34頁分を執筆)2009

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[Journal Article] An Overview of Studies on Epitaxial Growth of CeO2 Layers on Si Substrates2017

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[Journal Article] Perfect Separation of Hybrid Orientation Structure of CeO2(100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches2016

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[Journal Article] Perfect Separation of Hybrid Orientation Structure of CeO2(100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches2016

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[Journal Article] Development in Hybrid Orientation Technology by Electron Beam Induced Orientation Selective Epitaxial Growth2016

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[Journal Article] HIghly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy2014

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[Journal Article] Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy2014

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[Journal Article] Hybrid orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates2013

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INOUE Tomoyasu 井上知泰