Inoue Naohisa 井上直久

… Alternative Names

Researcher Number	60275287
Other IDs
External Links
Affiliation (Current)	2020: 東京農工大学, 工学(系)研究科(研究院), 客員教授
Affiliation (based on the past Project Information) *help	2005: 大阪府立大学, 産学官連携機構, 教授 2005: Osaka Prefecture University, PIAST, Professor, 産業官連機構, 教授 2004: 大阪府立大学, 先端科学研究所, 教授 1996 – 2000: Osaka Prefecture University Professor, 先端科学研究所, 教授
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Applied materials science/Crystal engineering / 固体物性Ⅱ(磁性・金属・低温)
Keywords	Principal Investigator SIMS / 化合物半導体 / 歪系 / 分子線成長 / 三次元成長 / その場観察 / 走査電子顕微鏡 / シミュレーション / 自己組織化 / モンテカルロシミュレーション … More Except Principal Investigator 量子井戸構造 / タイプII構造 / As / バンド不連続 / ヘテロ界面 / 量子効果光デバイス / 分子線エピタキシ- / 長波長レーザ / Sb系 / 高品質単分子膜 / ナノメートル領域AFMI-V測定 / 原子間力顕微鏡(AFM) / 電子授受 / 整流特性 / 分子ダイオード / マイクロ波測定 / サイクロトロン共鳴 / 表面インピーダンス / 電子スピン共鳴 / CeRu_2 / Yb_4AS_3 / α-(BEDT-TTF)_2NX_4Hg(SCN)_4 / Yb_4As_3 / 低密度磁性金属 / 強相関電子系 / マイクロ波吸収 / 超伝導体 / 重い電子系 / 有機伝導体 / Microwave / Cyclotron resonance / Surface impedance / Electron spin resonance / CeRuィイD22ィエD2 / YbィイD24ィエD2AsィイD23ィエD2 / α-(BEDT-TTF)ィイD22ィエD2NHィイD24ィエD2Hg(SCN)ィイD24ィエD2 / 分子線エピタキシー / タイプI構造 / 非対称量子井戸構造 / quantum well structure / molecular beam epitaxy / photonic devices / type II structure / Sb system / band off-set / hetero-interface / quantum effect devices Less

Research on the behavior and concentration measurement of nitrogen in silicon crystalsPrincipal Investigator
- Principal Investigator
  
  INOUE Naohisa
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka Prefecture University
Research of new functional photonic devices using asymmetric type II quantum well structure.
- Principal Investigator
  
  KAWAMURA Yuichi
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Research Institute for Advanced Science and Technology(RIAST), Osaka Prefecture University
光電変換機能性有機薄膜界面の電気化学的形成と高効率太陽電池の構築
- Principal Investigator
  
  上原赫
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Osaka Prefecture University
Microwave Absorption in Low-Carrier Density and Strongly Correlated Electron Systems at Low Temperature under High Magnetic Field
- Principal Investigator
  
  TOYOTA Naoki
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  固体物性Ⅱ(磁性・金属・低温)
- Research Institution
  TOHOKU UNIVERSITY
  Osaka Prefecture University
タイプII量子井戸構造を用いた低温度依存性長波長帯レーザの研究
- Principal Investigator
  
  KAWAMURA Yuichi
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka Prefecture University
In situ SEM study of 2D to 3D transition process of strained MBEPrincipal Investigator
- Principal Investigator
  
  INOUE Naohisa
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka Prefecture University

All 2006 2005 2004

All Journal Article Book

[Book] Infrared absorption measurement of carbon in silicon crystals, in Semiconductor Silicon 20062006
- Author(s)
  N.Inoue, M.Nakatsu
- Publisher
  The Electrochemical Society
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Book] Semiconductor Silicon 20062006
- Author(s)
  N.Inoue, K.Masumoto, M.Shinomiya, K.Kashima, K.Eifuku, M.Koizumi, T.Takahashi, T.Takenawa, A.Karen, K.Shingu, H.Yagi
- Publisher
  Standardization of Measurement of Nitrogen Concentration in CZ Silicon Crystals(5月予定)
- Data Source
  KAKENHI-PROJECT-16560014
[Book] Standardization of Measurement of Nitrogen Concentration in CZ Silicon Crystals, in Semiconductor Silicon 20062006
- Author(s)
  N.Inoue, K.Masumoto, K.Shinomiya, K.Kashima, K.Eifuku, M.Koizumi, T.Takahashi, T.Takenawa, A.Karen, K.Shingu, H.Yagi
- Publisher
  The Electrochemical Society
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Book] Semiconductor Silicon 20062006
- Author(s)
  N.Inoue, M.Nakatsu
- Publisher
  High sensitivity infrared absorption measurement of carbon in silicon crystals(5月予定)
- Data Source
  KAKENHI-PROJECT-16560014
[Book] Standardization of nitrogen analysis in CZ-Si by charged-particle activation analysis, in High Purity Silicon VIII2004
- Author(s)
  K.Masumoto, T.Nozaki, H.Yagi, Y.Minai, S.Saito, S.Futatsugawa, N.Inoue
- Publisher
  The Electrochemical Society
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Book] Behavior of nitrogen in CZ silicon in annealing revealed by infrared absorption spectroscopy, in Proc. 4^<th> Int.Symp.Advanced Science and Technology of Silicon Materials2004
- Author(s)
  N.Inoue, M.Nakatsu, K.Takahashi, H.Yamada-Kaneta
- Publisher
  日本学術振興協会
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Book] Measurement of Nitrogen Concentration in CZ-Si below 10^<14>/cm^3 by IR Absorption Spectroscopy, in High Purity Silicon VIII2004
- Author(s)
  M.Nakatsu, A.Hashimoto, A.Natsume, N.Inoue, H.Ono
- Publisher
  The Electrochemical Society
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Book] IR Measurement of Carbon Concentration in Silicon Crystals. in Proc.4^<th> Int. Symp. Advanced Science and Technology of Silicon Materials2004
- Author(s)
  N.Inoue, M.Nakatsu
- Publisher
  日本学術振興協会
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Infrared absorption measurement of carbon in silicon crystals2006
- Author(s)
  N.Inoue, M.Nakatsu
- Journal Title
  
  Semiconductor Silicon 2006 (The Electrochemical Society)
  
  Pages: 461-470
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Infrared absorption peaks in nitrogen doped CZ silicon2006
- Author(s)
  N.Inoue, M.Nakatsu, H.Ono
- Journal Title
  
  Materials Science & Engineering B (予定)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Local vibration modes of shallow thermal donors in nitrogen-doped CZ silicon crystals2006
- Author(s)
  N.Inoue, M.Nakatsu, H.Ono
- Journal Title
  
  Physica B B376-B377
  
  Pages: 101-104
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Local vibration modes of shallow thermal donors in nitrogen-doped CZ silicon crystals2006
- Author(s)
  N.Inoue, M.Nakatsu, H.Ono
- Journal Title
  
  Physica B 376-377
  
  Pages: 101-104
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Determination of low concentrations of N and C in CZ-Si by precise, FTIR spectroscopy2006
- Author(s)
  V.D.Akhmetov, H.Richter, N.Inoue
- Journal Title
  
  Physica B
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Determination of low concentrations of N and C in CZ-Si by precise FTIR spectroscopy2006
- Author(s)
  V.D.Akhmetov, H.Richter, N.Inoue
- Journal Title
  
  Physica B (予定)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Standardization of Measurement of Nitrogen Concentration in CZ Silicon Crystals2006
- Author(s)
  N.Inoue, K.Masumoto, M.Shinomiya, K.Kashima, K.Eifuku, M.Koizumi, T.Takahashi, T.Takenawa, A.Karen, K.Shingu, H.Yagi
- Journal Title
  
  Semiconductor Silicon 2006 (The Electrochemical Society)
  
  Pages: 453-460
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Local vibration modes of shallow thermal donors in nitrogen-doped CZ silicon crystals2006
- Author(s)
  N.Inoue, M.Nakatsu, H.Ono
- Journal Title
  
  Physica B 376, 377
  
  Pages: 101-104
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Infrared absorption peaks in nitrogen doped CZ silicon2006
- Author(s)
  N.Inoue, M.Nakatsu, H.Ono
- Journal Title
  
  Materials Science & Engineering B
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] 赤外吸収法によるCZシリコン中の窒素の濃度測定と熱処理挙動解析2005
- Author(s)
  井上直久, 中津雅臣, 棚橋克人, 金田寛, 小野春彦
- Journal Title
  
  シリコンテクノロジー No.68
  
  Pages: 35-38
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] 赤外吸収法によるCZシリコン中の窒素の濃度測定と熱処理挙動解析2005
- Author(s)
  井上直久, 中津雅臣, 棚橋克人, 金田寛, 小野春彦
- Journal Title
  
  シリコンテクノロジー 68
  
  Pages: 35-38
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Annealing Behavior of New Nitrogen Infrared Absorption Peaks in CZ Silicon2005
- Author(s)
  N.Inoue, M.Nakatsu, K.Tanahashi, H.Yamada-Kaneta, H.Ono, V.D.Akhmetov, O.Lysytskiy, H.Richter
- Journal Title
  
  Solid State Phenomena 108-109
  
  Pages: 609-614
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Annealing Behavior of New Nitrogen Infrared Absorption Peaks in CZ Silicon2005
- Author(s)
  N.Inoue, M.Nakatsu, K.Tanahashi, H.Yamada-Kaneta, H.Ono, V.D.Akhmetov, O.Lysytskiy, H.Richter
- Journal Title
  
  GADEST 2005 (発表予定)
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Infrared Absorption Measurement of Carbon Concentration Down to 1×10^<14>/cm^3 in CZ Silicon2005
- Author(s)
  N.Inoue, M.Nakatsu
- Journal Title
  
  Solid State Phenomena 108, 109
  
  Pages: 621-626
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Nitrogen concentration and thermal behavior characterized by infrared absorption spectroscopy2005
- Author(s)
  N.Inoue, M.Nakatsu, K.Tanahashi, H.Yamada-Kaneta, H.Ono
- Journal Title
  
  Silicon technology (in Japanese) No.68
  
  Pages: 35-38
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Annealing Behavior of New Nitrogen Infrared Absorption Peaks in CZ slicon2005
- Author(s)
  N.Inoue, M.Nakatsu, K.Tanahashi, H.Yamada-Kaneta, H.Ono, V.D.Akhmetov, O.Lysytskiy, H.Richter
- Journal Title
  
  Solid State Phenomena 108, 109
  
  Pages: 609-614
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Infrared Absorption Measurement of Carbon Concentration Down to 1×10^<14>/cm^3 in CZ Silicon2005
- Author(s)
  N.Inoue, M.Nakatsu
- Journal Title
  
  Solid State Phenomena 108-109
  
  Pages: 621-626
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] IR Measurement of Carbon Concentration in Silicon Crystals2004
- Author(s)
  N.Inoue, M.Nakatsu
- Journal Title
  
  Proc.4^<th> Int.Symp.Advanced Science and Technology of Silicon materials (JSPS)
  
  Pages: 119-122
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Behavior of nitrogen in CZ silicon in annealing revealed by infrared absorption spectroscopy2004
- Author(s)
  N.Inoue, M.Nakatsu, K.Tanahashi, H.Yamada-Kaneta
- Journal Title
  
  Proc.4^<th> Int.Symp.Advanced Science and Technology of Silicon materials (JSPS)
  
  Pages: 115-118
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Standardization of nitrogen analysis in CZ-Si by charged-particle activation analysis2004
- Author(s)
  K.Masumoto, T.Nozaki, H.Yagi, Y.Minai, S.Saito, S.Futatsugawa, N.Inoue
- Journal Title
  
  High Purity Silicon VIII (The Electrochemical Society)
  
  Pages: 69-76
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Behavior of nitrogen in CZ silicon in annealing revealed by infrared absorption spectroscopy2004
- Author(s)
  N.Inoue, M.Nakatsu, K.Tanahashi, H.Yamada-Kaneta
- Journal Title
  
  Proc.4^<th> Int.Symp.Advanced Science and Technology of Silicon Materials
  
  Pages: 115-118
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Measurement of Nitrogen Concentration in CZ Silicon Crystals2004
- Author(s)
  N.Inoue, A.Hashimoto, K.Shingu K.Masumoto
- Journal Title
  
  Solid State Phenomena 95, 96
  
  Pages: 489-494
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Standardization of nitrogen analysis in CZ-Si by charged-particle activation analysis2004
- Author(s)
  K.Masumoto, T.Nozaki, H.Yagi, Y.Minai, S.Saito, S.Futatsugawa, N.Inoue
- Journal Title
  
  High Purity Silicon VIII
  
  Pages: 69-76
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Measurement of Nitrogen Concentration in CZ Silicon Crystals2004
- Author(s)
  N.Inoue, A.Hashimoto, K.Shingu, K.Masumoto
- Journal Title
  
  Solid State Phenomena 95-96
  
  Pages: 489-494
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] IR Measurement of Carbon Concentration in Silicon Crystals2004
- Author(s)
  N.Inoue, M.Nakatsu
- Journal Title
  
  Proc.4^<th> Int.Symp.Advanced Science and Technology of Silicon Materials
  
  Pages: 119-122
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Measurement of Nitrogen Concentration in CZ-Si below 10^<14>/cm^3 by IR Absorption Spectroscopy2004
- Author(s)
  M.Nakatsu, A.Hashimoto, A.Ntsume, N.Inoue, H.Ono
- Journal Title
  
  High Purity Silicon VIII
  
  Pages: 102-108
- Data Source
  KAKENHI-PROJECT-16560014
[Journal Article] Measurement of Nitrogen Concentration in CZ-Si below 10^<14>/cm^3 by IR Absorption Spectroscopy2004
- Author(s)
  M.Nakatsu, A.Hashimoto, A.Natsume, N.Inoue, H.Ono
- Journal Title
  
  High Purity Silicon VIII (The Electrochemical Society)
  
  Pages: 102-108
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560014

1. KAWAMURA Yuichi (80275289)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
2. TOYOTA Naoki (50124607)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. HONMA Yoshikazu (30385512)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. HUJIMURA Norihumi (50199361)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. MATSUI Hiroshi (30275292)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. MASUMOTO Kazuyoshi (60124624)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
7. 上原赫 (60081329)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 岩田耕一 (20081242)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 杉本晃 (00081323)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 水野一彦 (10109879)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 落合明 (90183772)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. ANDREI Lebed (10281990)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Inoue Naohisa 井上 直久

INOUE Naohisa 井上 直久

Research Projects

Research Products

Co-Researchers

Research on the behavior and concentration measurement of nitrogen in silicon crystalsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research of new functional photonic devices using asymmetric type II quantum well structure.

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

光電変換機能性有機薄膜界面の電気化学的形成と高効率太陽電池の構築

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Microwave Absorption in Low-Carrier Density and Strongly Correlated Electron Systems at Low Temperature under High Magnetic Field

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

タイプII量子井戸構造を用いた低温度依存性長波長帯レーザの研究

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

In situ SEM study of 2D to 3D transition process of strained MBEPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] Infrared absorption measurement of carbon in silicon crystals, in Semiconductor Silicon 20062006

Author(s)

Publisher

Description

Data Source

[Book] Semiconductor Silicon 20062006

Author(s)

Publisher

Data Source

[Book] Standardization of Measurement of Nitrogen Concentration in CZ Silicon Crystals, in Semiconductor Silicon 20062006

Author(s)

Publisher

Description

Data Source

[Book] Semiconductor Silicon 20062006

Author(s)

Publisher

Data Source

[Book] Standardization of nitrogen analysis in CZ-Si by charged-particle activation analysis, in High Purity Silicon VIII2004

Author(s)

Publisher

Description

Data Source

[Book] Behavior of nitrogen in CZ silicon in annealing revealed by infrared absorption spectroscopy, in Proc. 4^<th> Int.Symp.Advanced Science and Technology of Silicon Materials2004

Author(s)

Publisher

Description

Data Source

[Book] Measurement of Nitrogen Concentration in CZ-Si below 10^<14>/cm^3 by IR Absorption Spectroscopy, in High Purity Silicon VIII2004

Author(s)

Publisher

Description

Data Source

[Book] IR Measurement of Carbon Concentration in Silicon Crystals. in Proc.4^<th> Int. Symp. Advanced Science and Technology of Silicon Materials2004

Author(s)

Publisher

Description

Data Source

[Journal Article] Infrared absorption measurement of carbon in silicon crystals2006

Author(s)

Inoue Naohisa 井上直久

INOUE Naohisa 井上直久