MATSUURA Hideharu 松浦秀治

… Alternative Names

Matsuura Hideharu 松浦秀治

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Researcher Number	60278588
Other IDs
External Links
Affiliation (Current)	2025: 大阪電気通信大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2020 – 2023: 大阪電気通信大学, 工学部, 教授 2014 – 2016: 大阪電気通信大学, 工学部, 教授 2003 – 2007: 大阪電気通信大学, 工学部, 教授 1998 – 1999: 大阪電気通信大学, 工学部, 助教授 1997: Osaka Electro-Communication University, Dept.of Electronics, Lecturer., 工学部・電子工学科, 専任講師 1996: 大阪電気通信大学, 工学部, 専任講師
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electron device/Electronic equipment / Electronic materials/Electric materials Except Principal Investigator 電子デバイス・機器工学 / Electron device/Electronic equipment
Keywords	Principal Investigator 4H-SiC / ホール係数 / 電気伝導機構 / Al添加4H-SiC / 高濃度Al添加4H-SiC / IGBT / p型4H-SiC / XRD / ホッピング伝導 / バンド伝導 … More / 抵抗率 / 電気伝導 / Alドープ / SiC / XRD分析 / Hall係数の符号反転 / Hall係数 / VRH伝導 / NNH伝導 / radiation-resistance / semi-insulating semiconductor / silicon drift detector / X-ray fluorescence / X-ray detector / 耐放射線性 / 半絶縁性半導体 / Silicon Drift Detector / 蛍光X線 / X線検出素子 / 有機半導体／有機半導体へテロ接合 / 欠陥評価 / 有機半導体／無機半導体へテロ接合 / 薄膜 / 有機半導体／有機半導体ヘテロ接合 / 有機半導体／無機半導体ヘテロ接合 / 有機半導体 / 接合特性 / バルクへテロ接合 / 有機／無機半導体ヘテロ接合 / 有機薄膜太陽電池 … More Except Principal Investigator MBE / AlInAs / superlattice / InGaSb / InAs / GaSb / Type II / InGaAs / Infrared / Cascade laser / InP substrate / AlGaAsSb barrier layer / InGaAs super lattice / Miniband Transition / Super lattice laser / ミニバンド間遷移 / 赤外 / カスケードレーザ / InP基板 / AlGaAsSb障壁層 / InGaAs超格子 / ミニバンド遷移 / 超格子レーザ / doping / MBE with a water cooling System / infrared semiconductor laser / Type II bandstructure / Type I band structure / AlGaSb / InGaSb) / (InAs / quantum well / InGaAsSb / AlGaAsSb / GaSb based infrared laser / TypeII / ドーピング / 超格子 / 水冷式分子線成長法 / 赤外半導体レーザ / multiple reflecting film / diffusion / disorder / surface emitting / strained quantum well / heterostructure / micro laser / 多重反射膜 / 拡散 / ディスオーダ / 面発光 / 歪量子井戸 / ヘテロ構造 / マイクロレーザ Less

Investigation of Electrical Conduction Mechanisms in Heavily Al-doped 4H-SiC for collector of SiC-IGBTPrincipal Investigator
- Principal Investigator
  
  松浦秀治
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Osaka Electro-Communication University
Physical Models of Temperature-dependent Resitivity and Hall Coefficient in Heavily Al-doped 4H-SiCPrincipal Investigator
- Principal Investigator
  
  Matsuura Hideharu
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Osaka Electro-Communication University
Investigation of organic semiconductor/inorganic semiconductor heterojunctions and organic semiconductor heterojunctionsPrincipal Investigator
- Principal Investigator
  
  MATSUURA Hideharu
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka Electro-Communication University
Investigation of high energy X-ray detectors to detect a trace of pollutant capable of operating at room temperaturePrincipal Investigator
- Principal Investigator
  
  MATSUURA Hideharu
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Electro-Communication University
Infrared Semiconductor Laser by Subband Transition at 3μmwavelength Band
- Principal Investigator
  
  SUSAKI Wataru
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Electro-Communication University
室温動作赤外半導体レーザの長波長化に関する研究
- Principal Investigator
  
  SUSAKI Wataru
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka Electro-Communication University
Disordering by Diffusion of Impurities in InGaAs/AlGa/GaAs Multiple Layrs and Its Application to Vertical Cavity Surface Emitting Micro Lasers
- Principal Investigator
  
  SUSAKI Wataru
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka Electro-Communication University

All 2023 2022 2021 2020 2015 2008 2007 2006 Other

All Journal Article Presentation Patent

[Journal Article] Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition2023
- Author(s)
  Hidaka Atsuki、Kondo Yuki、Takeshita Akinobu、Matsuura Hideharu、Eto Kazuma、Ji Shiyang、Kojima Kazutoshi、Kato Tomohisa、Yoshida Sadafumi、Okumura Hajime
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: 10 Pages: 1010011-6
- DOI
  10.35848/1347-4065/acfb64
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K03946
[Journal Article] Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC2023
- Author(s)
  Matsuura Hideharu、Hidaka Atsuki、Ji Shiyang、Eto Kazuma、Ishida Yuuki、Yoshida Sadafumi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 134 Issue: 11 Pages: 1157011-10
- DOI
  10.1063/5.0165404
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K03946
[Journal Article] Electrical Properties of Heavily Al-Doped 4H-SiC2023
- Author(s)
  Matsuura Hideharu、Takeshita Akinobu、Nishihata Rinya、Kondo Yuuki、Hidaka Atsuki
- Journal Title
  
  Materials Science Forum
  
  Volume: 1093 Pages: 73-86
- DOI
  10.4028/p-cmryy7
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K03946
[Journal Article] Electrical Properties of Heavily Al-Doped 4H-SiC2023
- Author(s)
  Hideharu Matsuura, Akinobu Takeshita, Rinya Nishihata, Yuuki Kondo, and Atsuki Hidaka
- Journal Title
  
  Materials Science Forum
  
  Volume: -
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04565
[Journal Article] Sign and Activation Energy of Hall Coefficient for Hopping Conduction in Heavily Al-Doped 4H-SiC2022
- Author(s)
  Hideharu Matsuura, Rinya Nishihata, and Atsuki Hidaka
- Journal Title
  
  Journal of Physics and Chemistry Research
  
  Volume: 4 Issue: 1 Pages: 1-8
- DOI
  10.36266/jpcr/145
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04565
[Journal Article] Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC2021
- Author(s)
  Matsuura Hideharu、Kondo Yuki、Iida Kosuke、Hidaka Atsuki、Ji Shiyang、Eto Kazuma、Kojima Kazutoshi、Kato Tomohisa、Yoshida Sadafumi、Okumura Hajime
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 3 Pages: 031008-031008
- DOI
  10.35848/1347-4065/abe645
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04565
[Journal Article] Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC2020
- Author(s)
  Hidaka Atsuki、Takeshita Akinobu、Ogawa Kohei、Imamura Tatsuya、Takano Kota、Okuda Kazuya、Matsuura Hideharu、Ji Shi Yang、Eto Kazuma、Mitani Takeshi、Kojima Kazutoshi、Kato Tomohisa、Yoshida Sadafumi、Okumura Hajime
- Journal Title
  
  Materials Science Forum
  
  Volume: 1004 Pages: 224-230
- DOI
  10.4028/www.scientific.net/msf.1004.224
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04565
[Journal Article] Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region2020
- Author(s)
  Matsuura Hideharu、Nishihata Rinya、Takeshita Akinobu、Ogawa Kohei、Imamura Tatsuya、Takano Kota、Okuda Kazuya、Hidaka Atsuki、Ji Shi Yang、Eto Kazuma、Kojima Kazutoshi、Kato Tomohisa、Yoshida Sadafumi、Okumura Hajime
- Journal Title
  
  Materials Science Forum
  
  Volume: 1004 Pages: 215-223
- DOI
  10.4028/www.scientific.net/msf.1004.215
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04565
[Journal Article] Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC2020
- Author(s)
  Matsuura Hideharu、Takeshita Akinobu、Hidaka Atsuki、Ji Shiyang、Eto Kazuma、Mitani Takeshi、Kojima Kazutoshi、Kato Tomohisa、Yoshida Sadafumi、Okumura Hajime
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 5 Pages: 051004-051004
- DOI
  10.35848/1347-4065/ab8701
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04565
[Journal Article] Characterization of Intrinsic Defects in High-Purity High-Resistivity p-Type 6H-SiC2008
- Author(s)
  H.Matsuura, H.Yanase, and M.Takahashi
- Journal Title
  
  Japanese Journal of Applied Physice (in press)
- NAID
  40016294912
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation2008
- Author(s)
  H.Matsuura, N.Minohara, and T.Ohshima
- Journal Title
  
  Japanese Journal of Applied Physice (in press)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy2008
- Author(s)
  M.Takahashi and H.Matsuura
- Journal Title
  
  Materials Science Forum (in press)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Characterization of deep centers in semi-insulating SiC and HgI_2:Application of discharge current transient spectroscopy2008
- Author(s)
  H.Matsuura, M.Takahashi, S.Nagata, and K.Taniguchi
- Journal Title
  
  Journal of Materials Science:Materials in Electronics (in press)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Mechanisms of Reduction in Hole Concentration in Al-Implanted p-type 6H-SiC by 1 MeV Electron Irradiation2008
- Author(s)
  H.Matsuura, K.Izawa, N.Minohara, and T.Ohshima
- Journal Title
  
  Japanese Journal of Applied Physice (in press)
- NAID
  40016161753
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Mechanisms of Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons2007
- Author(s)
  H.Matsuura, N.Minohara, Y.Inagawa, M.Takahashi, T.Ohshima, and H.Itoh
- Journal Title
  
  Materials Science Forum 556-557
  
  Pages: 379-382
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Mechanisms of Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons2007
- Author(s)
  H. Matsuura
- Journal Title
  
  Materials Science Forum. 556-557
  
  Pages: 379-382
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Characterization of deep centers in semi-insulating SiC and HigI_2 : Application of discharge current transientr spectroscopy
- Author(s)
  H. Matsuura
- Journal Title
  
  Journal of Materials Science : Materials in Electronics (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation
- Author(s)
  H. Matsuura
- Journal Title
  
  Journal of Applied Physics (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Mechanisms of Reduction in Hole Concentration in Al-Implanted p-type 6H-SiC by 1 MeV Electron irradiation
- Author(s)
  H. Matsuura
- Journal Title
  
  Japanese Journal of Applied Physics (in press)
- NAID
  40016161753
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
- Author(s)
  M. Takahashi and H. Matsuura
- Journal Title
  
  Materials Science Forum (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Journal Article] Characterization of Intrinsic Defects in High-Purity High-Resistivity p-Type 6H-SiC
- Author(s)
  H. Matsuura
- Journal Title
  
  Japanese Journal of Applied Physics (in press)
- NAID
  40016294912
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Patent] 放射線検出器2007
- Inventor(s)
  松浦秀治, 谷口一雄, 宇高忠
- Industrial Property Rights Holder
  松浦秀治, 谷口一雄, 宇高忠
- Industrial Property Number
  2007-098037
- Filing Date
  2007-04-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Patent] 放射線検出器2006
- Inventor(s)
  松浦秀治, 谷ロ一雄, 宇高忠
- Industrial Property Rights Holder
  松浦秀治, 谷ロ一雄, 宇高忠
- Industrial Property Number
  2006-336727
- Filing Date
  2006-12-14
- Data Source
  KAKENHI-PROJECT-18560356
[Patent] 放射線検出器2006
- Inventor(s)
  松浦秀治, 谷口一雄, 宇高忠
- Industrial Property Rights Holder
  松浦秀治, 谷口一雄, 宇高忠
- Industrial Property Number
  2006-336727
- Filing Date
  2006-12-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC2023
- Author(s)
  Hideharu Matsuura, Akinobu Takeshita, Rinya Nishihata, Yuki Kondo, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Yuuki Ishida, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, and Hajime Okumura
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03946
[Presentation] Al濃度1E20 cm^-3台前半でのp型4H-SiC CVDエピ膜の結晶性と電気特性との関係2022
- Author(s)
  近藤佑樹, 日高淳輝, 松浦秀治, 紀世陽, 江藤数馬, 児島一聡, 加藤智久, 吉田貞史, 奥村元
- Organizer
  第64回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04565
[Presentation] Electrical Properties of Heavily Al-Doped 4H-SiC2022
- Author(s)
  Hideharu Matsuura, Akinobu Takeshita, Rinya Nishihata, Yuuki Kondo, and Atsuki Hidaka
- Organizer
  3rd Asia-Pacific Conference on Silicon Carbide and Related Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04565
[Presentation] Al濃度10^20 cm^-3台前半でのp型4H-SiCエピ膜の電気抵抗率の温度依存性とAl濃度との関係2020
- Author(s)
  近藤佑樹, 竹下明伸, 今村辰哉, 高野晃大, 奥田和也, 日高淳輝, 松浦秀治, 紀世陽, 江藤数馬, 児島一聡, 加藤智久, 吉田貞史, 奥村元
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04565
[Presentation] 逆型有機薄膜太陽電池の経年劣化に関して2015
- Author(s)
  鍔優、松浦秀治
- Organizer
  電気関係学会関西連合大開
- Place of Presentation
  摂南大学(大阪府・寝屋川市)
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-26420283
[Presentation] Characterization of deep centers in semi-insulating SiC and HgI_2:application of discharge current transient spectroscopy2007
- Author(s)
  H.Matsuura, M.Takahashi, S.Nagata, and K.Taniguchi
- Organizer
  14th Semiconducting and Insulating Materials Conference (SIMC XIV 2007)
- Place of Presentation
  Feyatteville, Arkansas, USA
- Year and Date
  2007-05-19
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Hall測定によるワイドギャップ半導体中の不純物の評価2007
- Author(s)
  松浦秀治
- Organizer
  第12回結晶工学セミナー(結晶工学スクール応用編)「電気・光学素子技術の基礎と応用」-ワイドバンドギャップ半導体編-
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2007-10-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] 200keV電子線照射におけるAl-doped 4H-SiCエビ膜の耐放射線性2007
- Author(s)
  蓑原伸正、稲川祐介、高橋美雪、松浦秀治、大島武、伊藤久義
- Organizer
  SiC及び関連ワイドギャップ半導体研究会第16回講演会
- Place of Presentation
  愛知県女性総合センター
- Year and Date
  2007-11-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Characterization of deep centers in semi-insulating SiC and HgI_2 : application of discharge current transient spectroscopy2007
- Author(s)
  H. Matsuura
- Organizer
  14th Semiconducting and Insulating Materials Conference
- Place of Presentation
  Feyatteville, Arkansas, USA
- Year and Date
  2007-05-19
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] 高純度半絶縁性4H-SiCを用いた室温動作可能なx線検出素子の可能性2007
- Author(s)
  高橋美雪、前田健寿、山本和代、松浦秀治
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Characterization of deep centers in semi-insulating SiC and HgI_2:application of discharge current transient spectroscopy2007
- Author(s)
  H.Matsuura, M.Takahashi, S.Nagata, and K.Taniguchi
- Organizer
  14th Semiconducting and Insulating Materials Conference(SIMC XIV 2007)
- Place of Presentation
  Feyatteville,Arkansas,USA
- Year and Date
  2007-05-19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy2007
- Author(s)
  M.Takahashi, H.Matsuura
- Organizer
  International Conference on SiC and Related Materials 2007
- Place of Presentation
  Otsu,Shiga,Japan
- Year and Date
  2007-10-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] 200keV電子線照射実験からのAl-doped 4H-SiCエビ膜中の深いアクセプタの起源の考察2007
- Author(s)
  蓑原伸正, 稲川祐介, 高橋美雪, 松浦秀治, 大島武, 伊藤久義
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] 放電電流過渡分光法による高純度半絶縁性4H-SiC中の欠陥評価2007
- Author(s)
  高橋美雪、松浦秀治
- Organizer
  SiC及び関連ワイドギャップ半導体研究会第16回講演会
- Place of Presentation
  愛知県女性総合センター
- Year and Date
  2007-11-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Possibility of High-Purity Semi-Insulating 4H-SiC Being Used as Portable X-Ray Detector Operating at Room Temperature2007
- Author(s)
  H.Matsuura and M.Takahashi
- Organizer
  International Conference on SiC and Related Materials 2007
- Place of Presentation
  Otsu,Shiga,Japan
- Year and Date
  2007-10-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] 1MeV電子線照射によるAl-doped 6H-SiCの正孔密度とアクセプタ密度の変化2007
- Author(s)
  井澤圭亮, 蓑原伸正, 外館憲、松浦秀治, 大島武, 伊藤久義
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] 200keV電子線照射実験からのAl-doped 4H-SiCエピ膜中の深いアクセプタの起源の考察2007
- Author(s)
  蓑原伸正, 稲川祐介, 高橋美雪、松浦秀治, 大島武, 伊藤久義
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Possibility of High-Purity Semi-Insulating 4H-SiC Being Used as Portable X-Ray Detector Operating at Room Temperature2007
- Author(s)
  H. Matsuura
- Organizer
  International Conference on SiC and Related Materials 2007
- Place of Presentation
  Otsu, Shiga, Japan
- Year and Date
  2007-10-18
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] 簡易型SDD素子の開発に向けて2007
- Author(s)
  松浦秀治
- Organizer
  大阪電気通信大学エレクトロ基礎研究所ワークショップ
- Place of Presentation
  大阪電気通信大学
- Year and Date
  2007-03-23
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy2007
- Author(s)
  M. Takahashi, H. Matsuura
- Organizer
  International Conference on SiC and Related Materials 2007
- Place of Presentation
  Otsu, Shiga, Japan
- Year and Date
  2007-10-18
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] p型4H-SiCの耐放射線性2006
- Author(s)
  松浦秀治、蓑原伸正、高橋美雪、大島武、伊藤久義
- Organizer
  SiC及び関連ワイドギャップ半導体研究会第15回講演会
- Place of Presentation
  高崎シティーギャラリー
- Year and Date
  2006-11-09
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV electrons2006
- Author(s)
  H. Matsuura
- Organizer
  7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
- Place of Presentation
  Takasaki City Gallery, Takasaki, Japan
- Year and Date
  2006-10-17
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Si Substrate Suitable for Radiation-Resistant Space Solar Cells2006
- Author(s)
  H.Matsuura, S.Kawasaki, T.Ohshima, and H.Itoh
- Organizer
  7th International Workshop on Radiation Effects on Semi conductor Devices for Space Application
- Place of Presentation
  Takasaki City Gallery,Takasaki,Japan
- Year and Date
  2006-10-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Mechanisms of Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons2006
- Author(s)
  H.Matsuura, N.Minohara, Y.Inagawa, M.Takahashi, T.Ohshima, and H.Itoh
- Organizer
  6th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Newcastle upon Tyne,UK
- Year and Date
  2006-09-05
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons2006
- Author(s)
  N.Minohara, Y.Inagawa, M.Takahashi, H.Matsuura, T.Ohshima, and H.Itoh
- Organizer
  2nd International Student Conference at Ibaraki University
- Place of Presentation
  Ibaraki University,Ibaraki,Japan
- Year and Date
  2006-10-05
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Si Substrate Suitable for Radiation-Resistant Space Solar Cells2006
- Author(s)
  H. Matsuura
- Organizer
  7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
- Place of Presentation
  Takasaki City Gallery, Takasaki, Japan
- Year and Date
  2006-10-17
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Mechanisms of Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons2006
- Author(s)
  H. Matsuura
- Organizer
  6th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Newcastle upon Tyne, UK
- Year and Date
  2006-09-05
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Al-doped 4H-SiCエビ膜中の正孔密度の200keV電子線照射量依存性2006
- Author(s)
  蓑原伸正, 稲川祐介, 高橋美雪, 松浦秀治, 大島武, 伊藤久義
- Organizer
  第67回応用物理学会学術講演会
- Place of Presentation
  立命館大学草津キャンパス
- Year and Date
  2006-08-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV electrons2006
- Author(s)
  H.Matsuura, N.Minohara, M.Takahashi, T.Ohshima, and H.Itoh
- Organizer
  7th International Workshop on Radiation Effects on Semi conductor Devices for Space Application
- Place of Presentation
  Takasaki City Gallery,Takasaki,Japan
- Year and Date
  2006-10-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560356
[Presentation] Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons2006
- Author(s)
  N. Minohara, H. Matsuura
- Organizer
  2nd International Student Conference at Ibaraki University
- Place of Presentation
  Ibaraki University, Ibaraki
- Year and Date
  2006-10-05
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560356

1. SUSAKI Wataru (00268294)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
2. SHIBATA Noboru (90076836)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. OHNO Nobuhito (20194251)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. TOMIOKA Akihiro (10211400)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. TANIGUCHI Kazuo (50076832)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results

MATSUURA Hideharu 松浦 秀治

Matsuura Hideharu 松浦 秀治

Research Projects

Research Products

Co-Researchers

Investigation of Electrical Conduction Mechanisms in Heavily Al-doped 4H-SiC for collector of SiC-IGBTPrincipal Investigator

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Physical Models of Temperature-dependent Resitivity and Hall Coefficient in Heavily Al-doped 4H-SiCPrincipal Investigator

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Investigation of organic semiconductor/inorganic semiconductor heterojunctions and organic semiconductor heterojunctionsPrincipal Investigator

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Investigation of high energy X-ray detectors to detect a trace of pollutant capable of operating at room temperaturePrincipal Investigator

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Infrared Semiconductor Laser by Subband Transition at 3μmwavelength Band

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室温動作赤外半導体レーザの長波長化に関する研究

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Disordering by Diffusion of Impurities in InGaAs/AlGa/GaAs Multiple Layrs and Its Application to Vertical Cavity Surface Emitting Micro Lasers

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[Journal Article] Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition2023

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[Journal Article] Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC2023

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[Journal Article] Electrical Properties of Heavily Al-Doped 4H-SiC2023

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[Journal Article] Electrical Properties of Heavily Al-Doped 4H-SiC2023

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[Journal Article] Sign and Activation Energy of Hall Coefficient for Hopping Conduction in Heavily Al-Doped 4H-SiC2022

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[Journal Article] Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC2021

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[Journal Article] Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC2020

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DOI

MATSUURA Hideharu 松浦秀治

Matsuura Hideharu 松浦秀治