TAKEUCHI Misaichi 武内道一

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TAKEUCHI Masaichi 竹内道一

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Researcher Number	60284585
Other IDs
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Affiliation (based on the past Project Information) *help	2012: 立命館大学, 立命館グローバル, 准教授 2009 – 2011: Ritsumeikan University, 立命館グローバル・イノベーション研究機構, 准教授 2010: 立命館大学, 立命館グローバル・イノベーション推進機構, 准教授 2007: 東京工業大学, 大学院・総合理工学研究科, 研究員 2007: Riken Institute, Nano-science Research Program, Researcher 2000 – 2002: 理化学研究所, 半導体工学研究室, 研究員 1997 – 1999: 九州工業大学, 工学部, 助手
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Science and Engineering Except Principal Investigator Applied physics, general / Electronic materials/Electric materials / 極微細構造工学 / Electron device/Electronic equipment
Keywords	Principal Investigator 結晶成長 / 縦型発光素子 / AlGaN / AlN / 量子井戸 / III族窒化物半導体 / 深紫外発光素子 / レーザーリフトオフ / AIGaN / AIN … More / その場観察 / クリティカルシックネス / アンチサーファクタント / 長波長帯レーザー / 量子ドット / InGaAsN / 格子欠陥 / 長波長発光素子 / 化合物半導体 / 波動関数光学 / 光電流分工法 / 二重量子井戸 / 電気光学効果素子 / アルミニウムヒ素 / ガリウムヒ素 / 波動関数工学 / 光電流分光法 / ワニエ・シュタルク局在現象 / 半導体超格子 … More Except Principal Investigator GaAs / 光電気効果 / 光電流スペクトル / 半導体超格子 / AlGaN / temperature modulation technique / boron oxide material / flax crystal growth technique / anti-surfactant method / hetero nonlinear photonic crystal / vertical type Deep UV LED / two light beam in-situ monitoring system / deep UV LED / ワイドバンドギャップ / LED / ドーピング / p型 / Al N / ナノテクノロジー / 半導体発光デバイス / 深紫外 / 低転位化 / レーザーリフトオフ / 低転移化 / 縦型LED / 結晶成長 / 深紫外線 / Al GaN / MOCVD / p型ZnO / フラックス法 / 高効率深紫外波長変換 / 非線型フォトニック結晶 / 量子ドットAlInGaN / 表面核生成機構 / 良質AlGaN / 縦型深紫外LED / 温度変調結晶成長法 / ボロン酸化物 / フラックス結晶成長法 / アンチサーファクタント / ヘテロ非線形フォトニック結晶 / 縦型深紫外発光素子 / 2光束その場観測システム / 深紫外半導体発光素子 / CARBONNANOTUBE / NITRIDE SEMICONDUCTOR / INFRARED CONTROL / SPIN / SINGLE-ELECTRON / QUANTUM DOTS / 単一電子トランジスタ / AlN / GaN / 赤外光 / 電子スピン / 選択成長法 / MBE / クーロンブロッケード / 単一電子スピン / 半導体量子ドット / 窒化物 / カーボンナノチューブ / 窒化物半導体 / 赤外制御 / スピン / 単一電子 / 量子ドット / photo-excited carrier transport / photo-electric effect / scanning tunneling microscopy (STM) / quantum well / local probe / photocurrent / tuneling / ピエゾ素子 / トンネル電流 / 光生成キャリア / 共鳴励起 / 走査型トンネル電子顕微鏡 / 光励起キャリアー伝導 / 走査型トンネル顕微鏡 / 量子井戸 / 局所プローブ / 光電流 / トンネル効果 / resonant tunneling / photoelectric effect / excitonic effect / Stark effect / optical transition / Photocurrent spectra / quantum structure / semiconductor superlattice / 励起+効果 / 共鳴トンネル効果 / 励起子効果 / シュタルク効果 / 光学遷移 / 量子構造 / 水殺菌 / 高効率 / 水銀灯 / スパッタ装置 / 2光速同時その場観測法 / 高品質GaAlN結晶 / 高出力 / 医療応用 / 水浄化 / 深紫外発光素子 / MIPE / マイクロプラズマ / 深紫外光 Less

Development of new high power deep UV light emitting device
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Ritsumeikan University
2光束成長その場観察技法を用いた縦型深紫外発光素子の高出力化に関する研究Principal Investigator
- Principal Investigator
  
  武内道一
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Ritsumeikan University
Research on vertical-type deep UV LEDs using new-concept substrate lift-off techniquesPrincipal Investigator
- Principal Investigator
  
  TAKEUCHI Misaichi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Ritsumeikan University
Development of deep UV light emitting devices using nano-technology and the application
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  2003 – 2007
- Research Category
  
  Grant-in-Aid for Creative Scientific Research
- Research Institution
  Ritsumeikan University
  Tokyo Institute of Technology
INFRARED LIGHT CONTROL OF SINGLE-ELECTRON SPIN IN THE NITRIDE QUANTUM DOTS AND ITS APPLICATION
- Principal Investigator
  
  KAWASAKI KOJI, 青柳克信
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied physics, general
- Research Institution
  Tokyo Institute of Technology
長波長帯半導体量子ドットレーザーのための新素材・新形成法に関する研究Principal Investigator
- Principal Investigator
  
  武内道一
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The Institute of Physical and Chemical Research
Trial manufacturing of nanometer-scale-area photocurrent response measurement apparatus under local and resonant photoexcitation
- Principal Investigator
  
  FIJIWARA Kenzo
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYUSHU INSTITUTE OF TECHNOLOGY
非対称二重周期超格子のワニエ・シュタルク局在現象に関する研究Principal Investigator
- Principal Investigator
  
  武内道一
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu Institute of Technology
Electric field control of opical transitions in semiconductor superlattice spaces
- Principal Investigator
  
  FUJIWARA Kenzo
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  極微細構造工学
- Research Institution
  KYUSHU INSTITUTE OF TECHNOLOGY

All 2012 2011 2010 2009 2008 2007 2006 2005

All Journal Article Presentation Patent

[Journal Article] Formation of AlGaN and GaN epitxial layer with high p-carrier concentration by pulse supply of source2012
- Author(s)
  Y. Aoyagi, M. Takeuchi, S. Iwai, H. Hirayama
- Journal Title
  
  AIP Advances
  
  Volume: 2 Issue: 1 Pages: 0012177-0012183
- DOI
  10.1063/1.3698156
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246051
[Journal Article] III-Nitride epitaxy on atomically controlled surface of sapphire substrate with slight misorientation2012
- Author(s)
  H. Aida, S. W. Kim, K. Sunakawa, N. Aota, K. Koyama, M. Takeuchi, and T. Suzuki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Pages: 25502-25502
- NAID
  210000140156
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360013
[Journal Article] High-sensitivity ozone sensing using 280nm deep ultraviolet light-emitting diode for depletion of natural hazard ozone2012
- Author(s)
  Y. Aoyagi, M. Takeuchi, K. Yoshida, M. Kurouchi, Y. Nanishi, H. Sugano, Y. Ahiko, H. Nakamura
- Journal Title
  
  Journal of Environmental Protection
  
  Volume: 3 Pages: 695-699
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246051
[Journal Article] III-Nitride epitaxy on atomically controlled surface of sapphire substrate with slight misorientation2012
- Author(s)
  H.Aida, S.W.Kim, K.Sunakawa, N.Aota, K.Koyama, M.Takeuchi, T.Suzuki
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 51 Issue: 2R Pages: 25502-25509
- DOI
  10.1143/jjap.51.025502
- NAID
  210000140156
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360013
[Journal Article]2012
- Author(s)
  Y. Aoyagi, M. Takeuchi, S. Iwai, H.Hirayama
- Journal Title
  
  AIP Advances
  
  Pages: 12177-12183
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246051
[Journal Article]2012
- Author(s)
  Y. Aoyagi, M. Takeuchi, K. Yoshida, M. Kurouchi, Y. Nanishi, H. Sugano, Y. Ahiko,H. Nakamura
- Journal Title
  
  Journal of Environmental Protection
  
  Volume: 137 Pages: 1215-1218
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246051
[Journal Article] High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition2011
- Author(s)
  Y.Aoyagi, M.Takeuchi, S.Iwai, H.Hirayama
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 99 Issue: 11
- DOI
  10.1063/1.3641476
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360013, KAKENHI-PROJECT-22246051
[Journal Article]2011
- Author(s)
  Y. Aoyagi, M. Takeuchi, S. Iwai, H.Hirayama
- Journal Title
  
  Appl. Phys. Letters
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246051
[Journal Article] High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor depositioN2011
- Author(s)
  Y. Aoyagi, M. Takeuchi, S. Iwai, and H. Hirayama
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 99 Pages: 112110-112110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360013
[Journal Article] Inactivation of Bacterial Viruses in Water Using Deep Ultraviolet Semiconductor Light-Emitting Diode2011
- Author(s)
  Y. Aoyagi, M. Takeuchi, K. Yoshida, M. Kurouchi, N. Yasui, N. Kamiko, T. Araki and Y. Nanishi
- Journal Title
  
  J. Environ. Eng
  
  Volume: 137 Pages: 1215-1215
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360013
[Journal Article] AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current2009
- Author(s)
  T.Nanjo, M.Takeuchi, A.Imai, M.Suita, T.Oishi, Y.Abe, E.Yagyu, T.Kurata, Y.Tokuda, Y.Aoyagi.
- Journal Title
  
  ELECTRONICS LETTERS 45
  
  Pages: 1346-1347
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360013
[Journal Article] AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current2009
- Author(s)
  T.Nanjo, M.Takeuchi, A.Imai, M.Suita, T.Oishi, Y.Abe, E.Yagyu, T.Kurata, Y.Tokuda, Y.Aoyagi
- Journal Title
  
  ELECTRONICS LETTERS 45
  
  Pages: 1346-1347
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016007
[Journal Article] AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current2009
- Author(s)
  T. Nanjo, M. Takeuchi, A. Imai, M. Suita, T. Oishi, Y. Abe, E. Yagyu, T. Kurata, Y. Tokuda and Y. Aoyagi
- Journal Title
  
  ELECTRONICS LETTERS
  
  Volume: 94 Pages: 1346-1346
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360013
[Journal Article] Improvement of Al-Polar AlN Layer Quality by Three-Stage Flow-Modulati on Metalorganic Chemical Vapor Deposition2008
- Author(s)
  M. Takeuchi
- Journal Title
  
  Appl. Phys. Express 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] 高効率大面積AlGaN深紫外発光素子実現のためのMOCVD成長2008
- Author(s)
  武内道一、
- Journal Title
  
  日本結晶成長学会特別講演会・日本学術振興会第161委員会第54回研究会資料
  
  Pages: 21-28
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Improvement of Al-Polar AIN Layer Quality by Three-StageFlow-Modulation Metalorganic Chemical Vapor Deposition2008
- Author(s)
  M.Takeuchi
- Journal Title
  
  Appl.Phys.Express 1
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Improvement of Al-Polar MN Layer Quality by Three-Stage Flow-Modulation Metalorganic Chemical Vapor Deposition2008
- Author(s)
  M. Takeuchi
- Journal Title
  
  Appl. Phys. Express 1
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Improvement of crystalline quality of N-polar MN layers on c-plane sapphire by low-pressure flow-modulated MOCVD2007
- Author(s)
  M. Takeuchi
- Journal Title
  
  J. Crystal. Growth 298
  
  Pages: 336-340
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Al-and N-polar AIN layers grown on c-plane sapphire substrates bymodified flow-modulation MOCVD2007
- Author(s)
  M.Takeuchi
- Journal Title
  
  J.Crystal Growth 305
  
  Pages: 360-365
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Al- and N-polar A1N layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD2007
- Author(s)
  M. Takeuchi
- Journal Title
  
  Crystal Growth 305
  
  Pages: 360-365
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Al-and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD2007
- Author(s)
  M. Takeuchi,
- Journal Title
  
  J. Crystal Growth 305
  
  Pages: 360-365
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD2007
- Author(s)
  M.Takeuchi, H.Shimizu, R.Kajitani, K.Kawasaki, Y.Kumagai, A.Koukits, Y.Aoyagi
- Journal Title
  
  J. Crystal Growth, 298
  
  Pages: 336-336
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Improvement of crystalline quality of N-polar AIN layers on c-planesapphire by low-pressure flow-modulated MOCVD2007
- Author(s)
  M.Takeuchi
- Journal Title
  
  J.Crystal Growth 298
  
  Pages: 336-340
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Combinatorial Experimentation and Materials Informatics2006
- Author(s)
  I.Takeuchi
- Journal Title
  
  MRS Bulletin 31
  
  Pages: 999-1003
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Combinatorial Experimentation and Materials Informatics2006
- Author(s)
  I. Takeuchi
- Journal Title
  
  MRS Bulletin. 31
  
  Pages: 999-1003
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique2006
- Author(s)
  K.Kawasaki, C.Koike, Y.Aoyagi, M.Takeuchi
- Journal Title
  
  Appl. Phys. Lett. 89・25
  
  Pages: 261114-261114
- Data Source
  KAKENHI-PROJECT-15GS0207
[Patent] AlN層の製造方法およびAlN2011
- Inventor(s)
  青柳克信武内道一
- Industrial Property Rights Holder
  立命館大学
- Industrial Property Number
  2011-151137
- Filing Date
  2011-07-07
- Data Source
  KAKENHI-PROJECT-22246051
[Patent] オゾン濃度測定装置2011
- Inventor(s)
  吉田薫, 武内道一, 青柳克信, 菅野裕靖, 阿彦由美, 菅野勝靖, 中村広隆
- Industrial Property Rights Holder
  吉田薫, 武内道一, 青柳克信, 菅野裕靖, 阿彦由美, 菅野勝靖, 中村広隆
- Industrial Property Number
  2011-038925
- Filing Date
  2011-02-24
- Data Source
  KAKENHI-PROJECT-22246051
[Patent] オゾン濃度測定装置2011
- Inventor(s)
  吉田薫、武内道一、青柳克信、中村広隆、菅野裕晴、阿彦由美、菅野勝靖
- Industrial Property Rights Holder
  (有)光電鍍工業、(独)都立産業技術研究センタ-、(学)立命館
- Industrial Property Number
  2011-038925
- Filing Date
  2011-02-24
- Data Source
  KAKENHI-PROJECT-21360013
[Patent] 結晶成長方法および半導体素子2011
- Inventor(s)
  青柳克信, 武内道一, 上田吉裕, 太田征孝
- Industrial Property Rights Holder
  青柳克信, 武内道一, 上田吉裕, 太田征孝
- Industrial Property Number
  2011-042479
- Filing Date
  2011-02-28
- Data Source
  KAKENHI-PROJECT-22246051
[Patent] AlN層の製造方法およびAlN層2011
- Inventor(s)
  武内道一、青柳克信
- Industrial Property Rights Holder
  立命館大学
- Industrial Property Number
  2011-151137
- Filing Date
  2011-07-07
- Data Source
  KAKENHI-PROJECT-21360013
[Patent] 結晶成長方法および半導体素子2011
- Inventor(s)
  青柳克信、武内道一、上田吉裕、太田征孝
- Industrial Property Rights Holder
  立命館大学、シャープ
- Industrial Property Number
  2011-042479
- Filing Date
  2011-02-28
- Data Source
  KAKENHI-PROJECT-21360013
[Patent] オゾン濃度測定装置2011
- Inventor(s)
  吉田薫、武内道一、青柳克信、中村広隆、菅野裕晴、阿彦由美、菅野勝靖
- Industrial Property Rights Holder
  (有)光電鍍工業、(独)都立産業技術研究センター、(学)立命館
- Industrial Property Number
  2011-038925
- Filing Date
  2011-02-24
- Data Source
  KAKENHI-PUBLICLY-21016007
[Patent] 結晶成長方法および半導体素子2010
- Inventor(s)
  青柳克信、武内道一、上田吉裕、太田征孝
- Industrial Property Rights Holder
  (学)立命館、シャープ(株)
- Industrial Property Number
  2010-155388
- Filing Date
  2010-07-08
- Data Source
  KAKENHI-PROJECT-21360013
[Patent] 結晶成長方法および半導体素子2010
- Inventor(s)
  青柳克信、武内道一、上田吉裕、太田征孝
- Industrial Property Rights Holder
  青柳克信、武内道一、上田吉裕、太田征孝
- Industrial Property Number
  2010-155388
- Filing Date
  2010-07-08
- Data Source
  KAKENHI-PROJECT-22246051
[Patent] 結晶成長方法および半導体素子2010
- Inventor(s)
  青柳克信、武内道一、上田吉裕、太田征孝
- Industrial Property Rights Holder
  (学)立命館、シャープ(株)
- Industrial Property Number
  2010-155388
- Filing Date
  2010-07-08
- Data Source
  KAKENHI-PUBLICLY-21016007
[Patent] 結晶成長方及び半導体素子2010
- Inventor(s)
  青柳克信武内道一
- Industrial Property Rights Holder
  立命館大学
- Industrial Property Number
  2010-155388
- Filing Date
  2010-07-08
- Data Source
  KAKENHI-PROJECT-22246051
[Patent] 窒化物半導体の製造方法2005
- Inventor(s)
  武内道一
- Industrial Property Rights Holder
  東京工業大学
- Patent Publication Number
  2006-278402
- Filing Date
  2005-03-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] ウェハそりを制御した厚膜AlNテンプレート上の265nm帯深紫外LEDの作製2012
- Author(s)
  黒内正仁, 武内道一, 青柳克信
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、新宿区(東京都)
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 極性混在AlN上へのAlGaN量子ドット状キャリア局在構造2012
- Author(s)
  武内道一, 黒内正仁, 黄恩淑, 青柳克信
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、新宿区(東京都)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] InN overgrowth through in situ AlN nano-mask on sapphire substrate2012
- Author(s)
  王科, 荒木努, 武内道一, 山口智広, 名西やすし
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、新宿区(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] ウェハそりを制御した厚膜AlNテンプレート上の265nm帯深紫外LEDの作製2012
- Author(s)
  黒内正仁, 武内道一, 青柳克信
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] InN overgrowth through in situ AlN nano-mask on sapphire substrate2012
- Author(s)
  王科, 荒木努, 武内道一, 山口智広, 名西やすし
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] マイクロプラズマを用いた深紫外発光素子の原理実証研究2012
- Author(s)
  黒瀬範子, 黒内正仁, 武内道一, 青柳克信
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、新宿区(東京都)
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] マイクロプラズマを用いた深紫外発光素子の原理実証研究2012
- Author(s)
  黒瀬範子, 黒内正仁, 武内道一, 青柳克信
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 極性混在AlN上へのAlGaN量子ドット状キャリア局在構造2012
- Author(s)
  武内道一、黒内正仁、青柳克信
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 高パワー深紫外半導体発光デバイスの開発2011
- Author(s)
  武内道一、青柳克信、渡辺正幸、荒川彰
- Organizer
  京都ナノクラスター第二回グループミーティング
- Place of Presentation
  JSTイノベーションプラザ(京都)(Invited)
- Year and Date
  2011-03-11
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 市販MOCVD装置によるAlGaN系深紫外LEDとその素子応用2011
- Author(s)
  武内道一、黒内正仁、青柳克信
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学、山形市(山形県)
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Development of III-Nitride based deep-UV LEDs2011
- Author(s)
  Misaichi Takeuchi
- Organizer
  Lecture ofdeep UV LEDs
- Place of Presentation
  Seoul Semiconductors安山市・韓国(Invited)
- Year and Date
  2011-02-17
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 成長レート増加によるAlN成長中のウェハそり低減2011
- Author(s)
  黒内正仁、武内道一、青柳克信
- Organizer
  第72会応用物理学会学術講演会
- Place of Presentation
  山形大学、山形市(山形県)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] GaN～AlN窒化物半導体MOCVD結晶成長2011
- Author(s)
  武内道一
- Organizer
  窒化物半導体セミナー
- Place of Presentation
  東京農工大学(東京)(Invited)
- Year and Date
  2011-02-04
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Development of III-Nitride based deep-UV LEDs2011
- Author(s)
  Misaichi Takeuchi
- Organizer
  Lecture of deep UV LEDs
- Place of Presentation
  Seoul Semiconductors安山市・韓国(Invited)
- Year and Date
  2011-02-17
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Over 1 mW Emission Achieved by Polarity-Inversion MOCVD Growth for AlGaN-Based Deep UV LEDs (λ〓265 nm)2011
- Author(s)
  M.Takeuchi, M.Kurouchi, Y.Aoyagi
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 成長レート増加によるAlN成長中のウェハそり低減2011
- Author(s)
  黒内正仁, 武内道一, 青柳克信
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] GaN～AlN窒化物半導体MOCVD結晶成長2011
- Author(s)
  武内道一
- Organizer
  窒化物半導体セミナー
- Place of Presentation
  東京農工大学(東京)(Invited)
- Year and Date
  2011-02-04
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] 高効率・高出力縦型深紫外発光素子の開発とその環境、バイオ・計測への応用2011
- Author(s)
  武内道一, 黒内正仁, 青柳克信
- Organizer
  京都ナノクラスター生活資源グループ平成22年度第2回グループミーティング
- Place of Presentation
  JSTイノベーションプラザ京都(京都府)
- Year and Date
  2011-03-11
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] 2光束成長その場観察技法を用いた縦型深紫外発光素子の高出力化に関する研究2011
- Author(s)
  武内道、黒内正仁、青柳克信
- Organizer
  窒化物光半導体のフロンティア-材料潜在能力の極限発現-
- Place of Presentation
  長浜・滋賀(Invited)
- Year and Date
  2011-03-01
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] Recent progress in our AlGaN deep UV LEDs-over 6 mW operation2011
- Author(s)
  M.Takeuchi, M. Kurouchi, Y.Aoyagi
- Organizer
  The 8^<th> SNU-Ritsumeikan University Joint Workshop on Compound Semiconductors
- Place of Presentation
  韓国、ソウル(招待講演)
- Year and Date
  2011-12-09
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 2光束成長その場観察技法を用いた縦型深紫外発光素子の高出力化に関する研究2011
- Author(s)
  武内道一、黒内正仁、青柳克信
- Organizer
  窒化物光半導体のフロンティア-材料潜在能力の極限発現-
- Place of Presentation
  長浜ロイヤルホテル・滋賀(Invited)
- Year and Date
  2011-03-01
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] 市販MOCVD装置によるAlGaN系深紫外LEDとその素子応用2011
- Author(s)
  武内道一、黒内正仁、青柳克信
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Over 1 mW Emission Achieved by Polarity-Inversion MOCVD Growth for AlGaN-Based Deep UV LEDs(λ265 nm)2011
- Author(s)
  M. Takeuchi, M. Kurouchi, Y. Aoyagi
- Organizer
  9th International Conference on Nitride Semiconductors(ICNS-9)
- Place of Presentation
  グラスゴー(英国)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Suppression of wafer curvature increment during AlN groth by increasing growth rate2011
- Author(s)
  黒内正仁、武内道一、青柳克信
- Organizer
  30th Electronic Materials Symposium(EMS30)
- Place of Presentation
  ラフォーレ琵琶湖、守山市(滋賀県)
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 2光束成長その場観察技法を用いた縦型深紫外発光素子の高出力化に関する研究2011
- Author(s)
  武内道一、黒内正仁、青柳克信
- Organizer
  窒化物光半導体のフロンティア-材料潜在能力の極限発現-
- Place of Presentation
  長浜ロイヤルホテル(滋賀)(Invited)
- Year and Date
  2011-03-01
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Recent progress in our AlGaN deep UV LEDs-over 6 mW operation(Invited)2011
- Author(s)
  M. Takeuchi, M. Kurouchi, Y. Aoyagi
- Organizer
  The 8th SNU-Ritsumeikan University Joint Workshop on Compound Semiconductors
- Place of Presentation
  ソウル(韓国)
- Year and Date
  2011-12-09
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 高パワー深紫外半導体発光デバイスの開発2011
- Author(s)
  武内道一、青柳克信、渡辺正幸、荒川彰
- Organizer
  京都ナノクラスター第二回グループミーティング
- Place of Presentation
  JSTイノベーションプラザ(京都)(Invited)
- Year and Date
  2011-03-11
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Water Sterilization by AlGaN base DUV Light Emitting Diodes2010
- Author(s)
  K.Yoshida, M, Kurouchi, M.Takeuchi, N.Yasui, N.Kamiko, Y.Nanishi, T.Araki, Y, Aoyagi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 水殺菌、およびオゾン検知へのAlGaN系深紫外LEDの実応用2010
- Author(s)
  武内道一、吉田薫、黒内正仁、荒木努、名西やすし、青柳克信
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会「GaN系プラネットコンシャスデバイス・材料の現状」
- Place of Presentation
  東北大学(宮城)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Formation of three-dimensional AlN structure for initial growth by an nealing AlN buffer layer2010
- Author(s)
  M.Kurouchi, M.Takeuchi, Y.Aoyagi
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  タンパ、フロリダ州
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Formation of three-dimensional AlN structure for initial growth by annealing AlN buffer layer2010
- Author(s)
  M.Kurouchi, M.Takeuchi, Y.Aoyagi
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  タンパ、フロリダ州
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] 深紫外線LEDを用いたオゾン濃度測定2010
- Author(s)
  吉田薫、黒内正仁、武内道一、荒木努、名西やすし、菅野裕靖、阿彦由美、中村広隆、青柳克信
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] III-Nitride based deep UV light emitting devices for environmental issues2010
- Author(s)
  M.Takeuchi
- Organizer
  The 7th Scientific Conference of University of Science
- Place of Presentation
  ホーチミン市、ベトナム(Invited)
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Water Sterilization by AlGaN base DUV Light Emitting Diodes2010
- Author(s)
  K. Yoshida, M, Kurouchi, M. Takeuchi, N. Yasui, N. Kamiko, Y. Nanishi, T. Araki, and Y. Aoyagi
- Organizer
  29th Electronic Materials Symposium(EMS29)
- Place of Presentation
  ラフォーレ修善寺、伊豆市(静岡県)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 深紫外LEDによる水処理・オゾンセンサー(Invited)2010
- Author(s)
  武内道一
- Organizer
  第三回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  東北大学、仙台市(宮城県)
- Year and Date
  2010-10-25
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] GaN系結晶成長とその場観察法2010
- Author(s)
  武内道一
- Organizer
  窒化物半導体セミナー
- Place of Presentation
  東京大学(東京)(Invited)
- Year and Date
  2010-10-27
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] III族窒化物半導体深紫外光源による水処理2010
- Author(s)
  武内道一、黒内正仁、青柳克信、安井宣仁、神子直之
- Organizer
  第13回日本水環境学会シンポジウム
- Place of Presentation
  京都大学(京都)(Invited)
- Year and Date
  2010-09-09
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlNボイド形成法によるSi基板上へのクラックフリーAlGaN層成長2010
- Author(s)
  武内道一、林洋平、荒木努、名西やすし、青柳克信
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、平塚市(神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 深紫外LEDによる水処理・オゾンセンサー2010
- Author(s)
  武内道一
- Organizer
  第三回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2010-10-26
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] 深紫外線LEDを用いたオゾン濃度測2010
- Author(s)
  吉田薫、黒内正仁、武内道山、荒木努、名西〓之、菅野裕靖、阿彦由美、中村広隆、青柳克信
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] 極性混在AlNバッファ層のアニール処理による新しい核形成法2010
- Author(s)
  黒内正仁、武内道一、黄恩淑、青柳克信
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] III-Nitride based deep UV light emitting devices for environmental issues(Invited)2010
- Author(s)
  M. Takeuchi
- Organizer
  The 7th Scientific Conference of University of Science
- Place of Presentation
  ホーチミンシティ(ベトナム)
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 水殺菌、およびオゾン検知へのAlGaN系深紫外LEDの実応用2010
- Author(s)
  武内道一、吉田薫、黒内正仁、荒木努、名西やすし、青柳克信
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会「GaN系プラネットコンシャスデバイス・材料の現状」
- Place of Presentation
  東北大学(宮城)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 深紫外線LEDを用いた水の消毒2010
- Author(s)
  吉田薫、黒内正仁、安井宣仁、武内道一、荒木努、神子直之、名西やすし、青柳克信
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2010-03-28
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] Water Sterilization by AlGaN base DUV Light Emitting Diodes2010
- Author(s)
  K.Yoshida, M, Kurouchi, M.Takeuchi, N.Yasui, N.Kamiko, Y.
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺(静岡県)
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] GaN系結晶成長とその場観察法2010
- Author(s)
  武内道一
- Organizer
  窒化物半導体セミナー
- Place of Presentation
  東京大学(東京)(Invited)
- Year and Date
  2010-10-27
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlGaN系深紫外発光素子対応半導体層のMOCVD成長2010
- Author(s)
  武内道一
- Organizer
  第52回CVD研究会
- Place of Presentation
  京都私学会館(京都)(Invited)
- Year and Date
  2010-12-13
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] III族窒化物半導体深紫外光源による水処理2010
- Author(s)
  武内道一、黒内正人、青柳克信、安井宣仁、神子直之
- Organizer
  第13回日本水環境学会シンポジウム
- Place of Presentation
  京都大学(京都府)
- Year and Date
  2010-09-09
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] III-Nitride based deep UV light emitting devices for environmental issues2010
- Author(s)
  Misaichi Takeuchi
- Organizer
  The 7th Scientific Conference of University of Science
- Place of Presentation
  Ho Chi Minh, Viet Nam
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] Formation of Three-dimensional AlN Structure for Initial Growth by Annealing AlN Buffer Layer2010
- Author(s)
  M. Kurouchi, Misaichi Takeuchi, Yoshinobu Aoyagi
- Organizer
  International Workshop on Nitride Semiconductors 2010(IWN2010)
- Place of Presentation
  タンパ(米国)
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 深紫外線LEDを用いた水の消毒2010
- Author(s)
  吉田薫、黒内正仁、安井宣仁、武内道一、、荒木努、神子直之、名西やすし、青柳克信
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlGaN系深紫外発光素子対応半導体層のMOCVD成長2010
- Author(s)
  武内道一
- Organizer
  第52回CVD研究会
- Place of Presentation
  京都私学会館(京都)(Invited)
- Year and Date
  2010-12-13
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] III-Nitride based deep UV light emitting devices for environmental issues2010
- Author(s)
  M.Takeuchi
- Organizer
  The 7th Scientific Conference of University of Science
- Place of Presentation
  ホーチミン市、ベトナム(Invited)
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Growth and Application of AlGaN Deep UV LEDs-Water Purification and Ozone Sensing-(Invited)2010
- Author(s)
  M. Takeuchi, K. Yoshida, M. Kurouchi, T. Araki, Y. Nanishi, Y. Aoyagi
- Organizer
  The 6th SNU-Ritsumeikan Joint Workshop on Compound Semiconductors
- Place of Presentation
  ソウル(韓国)
- Year and Date
  2010-11-10
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 極性混在AINバッファ層のアニール処理による新しい核形成法2010
- Author(s)
  黒内正仁、武内道一、黄恩淑、青柳克信
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 水殺菌、およびオゾン検知へのAlGaN系深紫外LEDの実応用2010
- Author(s)
  武内道一、吉田薫、黒内正人、荒木努、名西〓之、青柳克信
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会GaN系プラネットコンシャスデバイス・材料の現状
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] AlGaN-based deep UV light emitting devices for environment issues2010
- Author(s)
  武内道一
- Organizer
  MICINN-JST Joint Workshop on "Nanoscience and New Materials for Environmental Challenges"
- Place of Presentation
  バルセロナ(スペイン)
- Year and Date
  2010-03-11
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] 極性混在AlNバッファ層のアニール処理による新しい核形成法2010
- Author(s)
  黒内正仁, 武内道一, 黄恩淑, 青柳克信
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学、長崎市(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] III族窒化物半導体深紫外光源による水処理2010
- Author(s)
  武内道一、黒内正仁、青柳克信、安井宣仁、神子直之
- Organizer
  第13回日本水環境学会シンポジウム
- Place of Presentation
  京都大学(京都)(Invited)
- Year and Date
  2010-09-09
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Field Plate構造を適用したAlGaN channel HEMTの特性2010
- Author(s)
  南條拓真、武内道一、今井章文、鈴木洋介、塩沢勝臣、吹田宗義、阿部雄次、柳生栄治、吉新喜市、青柳克信
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 深紫外線LEDを用いた水の消毒2010
- Author(s)
  吉田薫、黒内正仁、安井宣仁、武内道一、荒木努、神子直之、名西やすし、青柳克信
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Growth and Application of AlGaN Deep UV LEDs -Water Purification and Ozone Sensing2010
- Author(s)
  M.Takeuchi, K.Yoshida, M.Kurouchi, T.Araki, Y.Nanishi, Y.Aoyagi
- Organizer
  The 6th SNU-Ritsumeikan University Joint Workshop
- Place of Presentation
  Soeul, Korea
- Year and Date
  2010-11-10
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] 極性混在AlNバッファ層のアニール処理による新しい核形成法2010
- Author(s)
  黒内正人、武内道一、青柳克信
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] Crack-free AlGaN/AlN Templates Grown on Si(111) Substrates by In-situ Void Formation Technique2010
- Author(s)
  M. Takeuchi, Y. Aoyagi
- Organizer
  International Workshop on Nitride Semiconductors 2010(IWN2010)
- Place of Presentation
  タンパ(米国)
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlGaN-based deep UV light emitting devices for environment issues(Invited)2010
- Author(s)
  M. Takeuchi
- Organizer
  MICINN-JST JointWorkshop on "Nanoscience and New Materials for Environmental Challenges"
- Place of Presentation
  マドリード(スペイン)
- Year and Date
  2010-03-11
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Formation of Three-dimensional AlN Structure for Initial Growth by Annealing AlN Buffer Love2010
- Author(s)
  Masahiro Kurouchi, Misaichi Takeuchi, Yoshinobu Aoyagi
- Organizer
  The International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] Crack-free AlGaN/AlN Templates Grown on Si(111) Substrates by In-situ Void Formation Technique2010
- Author(s)
  Misaichi Takeuchi, Yoshinobu Aoyagi
- Organizer
  The International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] AlNボイド形成法によるSi基板上へのクラックフリーAlGaN層成長2010
- Author(s)
  武内道一、林洋平、荒木努、名西やすし、青柳克信
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2010-03-29
- Data Source
  KAKENHI-PROJECT-22246051
[Presentation] Field Plate構造を適用したAlGaN channel HEMTの特性2010
- Author(s)
  南條拓真、武内道一、今井章文、鈴木洋介、塩沢勝臣、吹田宗義、阿部雄次、柳生栄治、吉新喜市、青柳克信
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学、長崎市(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 深紫外LEDによる水処理・オゾンセンサー2010
- Author(s)
  武内道一
- Organizer
  第三回窒化物半導体の高品質結晶とその素子応用
- Place of Presentation
  東北大学(宮城)(Invited)
- Year and Date
  2010-10-26
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Crack-free AlGaN/AlN templates grown on Si(III)substrates by in-situ void formation technique2010
- Author(s)
  M.Takeuchi, Y.Aoyagi
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  タンパ、フロリダ州
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Growth and Application of AlGaN Deep UV LEDs-Water Purification and Ozone Sensing-2010
- Author(s)
  M.Takeuchi, K.Yoshida, M.Kurouchi, T.Araki, Y.Nanishi, Y.Aoyagi
- Organizer
  The 6th SNU-Ritsumeikan University Joint Workshop
- Place of Presentation
  ソウル、韓国(Invited)
- Year and Date
  2010-11-10
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] AlNボイド形成法によるSi基板上へのクラックフリーAlGaN層成長2010
- Author(s)
  武内道一、林洋平、荒木努、名西やすし、青柳克信
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Water Sterilization by AlGaN base DUV Light Emitting Diodes2010
- Author(s)
  K.Yoshida, M, Kurouchi, M.Takeuchi, N.Yasui, N.Kamiko, Y.Nanishi, T.Araki, Y, Aoyagi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] AlGaN-based deep UV light emitting devices for environment issues2010
- Author(s)
  M.Takeuchi
- Organizer
  MICINN-JST Joint Workshop on "Nanoscience and New Materials for Environmental Challenges"
- Place of Presentation
  バルセロナ(スペイン)
- Year and Date
  2010-03-11
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 水殺菌、およびオゾン検知へのAlGaN系深紫外LEDの実応用2010
- Author(s)
  武内道一、吉田薫、黒内正人、荒木努、名西.之、青柳克信
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会GaN系プラネットコンシャスデバイス・材料の現状
- Place of Presentation
  東北大学、仙台市(宮城県)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 深紫外LEDによる水処理・オゾンセンサー2010
- Author(s)
  武内道一
- Organizer
  第三回窒化物半導体の高品質結晶とその素子応用
- Place of Presentation
  東北大学(宮城)(Invited)
- Year and Date
  2010-10-26
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] 深紫外線LEDを用いたオゾン濃度測定2010
- Author(s)
  吉田薫、黒内正仁、武内道一、荒木努、名西.之、菅野裕靖、阿彦由美、中村広隆、青柳克信
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  発表場所:長崎大学、長崎市(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Crack-free AlGaN/AlN templates grown on Si(III) substrates by in-situ void formation technique2010
- Author(s)
  M.Takeuchi, Y.Aoyagi
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  タンパ、フロリダ州
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] III族窒化物半導体深紫外光源による水処理(Invited)2010
- Author(s)
  武内道一、黒内正人、青柳克信、安井宣仁、神子直之
- Organizer
  第13回日本水環境学会シンポジウム
- Place of Presentation
  京都大学、京都市(京都府)
- Year and Date
  2010-09-09
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 深紫外線LEDを用いたオゾン濃度測定2010
- Author(s)
  吉田薫、黒内正仁、武内道一、荒木努、名西やすし、菅野裕靖、阿彦由美、中村広隆、青柳克信
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Field Plate構造を適用したAlGaN chamel HEMTの特性2010
- Author(s)
  南條拓真、武内道一、今井章文、鈴木洋介、塩沢勝臣、吹田宗義、阿部雄次、柳生栄治、吉新喜市、青柳克信
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] AlGaN系深紫外発光素子対応半導体層のMOCVD成長2010
- Author(s)
  武内道一
- Organizer
  第52回CVD研究会
- Place of Presentation
  京都私学会館、京都市(京都府)
- Year and Date
  2010-12-13
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Growth and Application of AlGaN Deep UV LEDs-Water Purification and Ozone Sensing-2010
- Author(s)
  M.Takeuchi, K.Yoshida, M.Kurouchi, T.Araki, Y.Nanishi, Y.Aoyagi
- Organizer
  The 6th SNU-Ritsumeikan University Joint Workshop
- Place of Presentation
  ソウル、韓国(Invited)
- Year and Date
  2010-11-10
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlNボイド形成法によるSi基板上へのクラックフリーAlGaN層成長2010
- Author(s)
  武内道一、林洋平、荒木努、名西やすし、青柳克信
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Investigation of AlN MOCVD Growth by Two-light-Beam in-situ Monitoring System2009
- Author(s)
  武内道一, 青柳克信
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  済州島(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Drivability Enhancement of AlGaN Channel HEMTs2009
- Author(s)
  T.Nanjo, M.Takeuchi, A.Imai, M.Suita, T.Oishi, Y.Abe, E.Yagyu, T.Kurata, Y.Tokuda, Y.Aoyagi
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  済州島(韓国)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] SiドープAlGaNの反りと結晶成長2009
- Author(s)
  武内道一
- Organizer
  第2回窒化物半導体の高品質結晶成長と素子応用
- Place of Presentation
  東北大(宮城)
- Year and Date
  2009-12-23
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlN～AlGaN MOCVD成長その場観察-縦型深紫外発光素子実現にむけて-2009
- Author(s)
  武内道一、青柳克信
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大(東京)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] SiドープAlGaNの反りと結晶成長2009
- Author(s)
  武内道一
- Organizer
  第2回窒化物半導体の高品質結晶成長と素子応用
- Place of Presentation
  東北大(宮城)
- Year and Date
  2009-12-23
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] EpiCurve R-TTを用いた薄膜光干渉信号の分光学的解釈-成長,再蒸発,3D化,2D化,etc.-2009
- Author(s)
  武内道一
- Organizer
  レイテックセミナー
- Place of Presentation
  丸文東京本社(東京)
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 超格子はく離層を用いたAlGaN系レーザリフトオフ法によるダメージの評価2009
- Author(s)
  高橋聡、武内道一、荒木努、名西やすし、青柳克信
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山)
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] AlN～AlGaN系窒化物半導体による大面積縦型発光素子のための結晶成長技術の確立2009
- Author(s)
  武内道一
- Organizer
  第1回窒化物半導体の高品質結晶成長と素子応用
- Place of Presentation
  東北大(宮城)
- Year and Date
  2009-07-31
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Wafer bowing control by polarity management of MOCVD AlN growth2009
- Author(s)
  武内道一
- Organizer
  Laytec Seminar
- Place of Presentation
  済州島(韓国)
- Year and Date
  2009-10-18
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Drivability Enhancement of AlGaN Channel HEMTs2009
- Author(s)
  T.Nanjo, M.Takeuchi, A.Imai, M.Suita, T.Oishi, Y.Abe, E.Yagyu, T.Kurata, Y.Tokuda, Y.Aoyagi
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  済州島(韓国)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Designing of multiple quantum well structures to increase emission intensity from AlGaN LEDs2009
- Author(s)
  M.Kurouchi, Y.Hayashi, M.Takeuchi, T.Araki, Y.Nanishi, Y.Aoyagi
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(滋賀)
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlN～AlGaN MOCVD成長その場観察-縦型深紫外発光素子実現にむけて-2009
- Author(s)
  武内道一、青柳克信
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大(東京)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] 高出力深紫外縦型半導体発光素子の開発と水浄化への応用2009
- Author(s)
  武内道一、青柳克信
- Organizer
  第12回日本水環境学会シンポジウム
- Place of Presentation
  お茶の水女子大(東京)
- Year and Date
  2009-09-14
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Discussion about the growth model of AlN flow-modulation MOCVD2009
- Author(s)
  M. Takeuchi and Y. Aoyagi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖、守山市(滋賀県)
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] SiドープAlGaNの反りと結晶成長(Invited)2009
- Author(s)
  武内道一
- Organizer
  第2回窒化物半導体の高品質結晶成長と素子応用
- Place of Presentation
  東北大学、仙台市(宮城県)
- Year and Date
  2009-12-22
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Investigation of AlN MOCVD Growth by Two-light-Beam in-situ Monitoring System2009
- Author(s)
  M. Takeuchi, Y. Aoyagi
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  済州島(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlN MOCVD成長の二光束成長その場観察2009
- Author(s)
  武内道一, 青柳克信
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山市(富山県)
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] EpiCurve R-TTを用いた薄膜光干渉信号の分光学的解釈-成長,再蒸発,3D化,2D化,etc.-2009
- Author(s)
  武内道一
- Organizer
  レイテックセミナー
- Place of Presentation
  丸文大阪支社(大阪)
- Year and Date
  2009-11-27
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Development of AlGaN-based vertical-type deep UV LEDs2009
- Author(s)
  武内道一
- Organizer
  Seoul National University Seminar
- Place of Presentation
  ソウル国立大(韓国)
- Year and Date
  2009-10-27
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] AlGaN量子井戸構造に対するIII族元素を用いたポストアニール効果2009
- Author(s)
  吉田薫, 武内道一, 荒木努, 名西やすし, 青柳克信
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山市(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Drivability Enhancement of AlGaN Channel HEMTs2009
- Author(s)
  T. Nanjo, M. Takeuchi, A. Imai, M. Suita, T. Oishi, Y. Abe, E. Yagyu, T. Kurata, Y. Tokuda, Y. Aoyagi
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  済州島(韓国)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlN MOCVD成長の二光東成長その場観察2009
- Author(s)
  武内道一、青柳克信
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山)
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Designing of multiple quantum well structures to increase emission intensity from AlGaN LEDs2009
- Author(s)
  M. Kurouchi, Y. Hayashi, M. Takeuchi, T. Araki, Y. Nanishi, and Y. Aoyagi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖、守山市(滋賀県)
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Designing of multiple quantum well structures to increase emission intensity from AlGaN LEDs2009
- Author(s)
  M.Kurouchi, Y.Hayashi, M.Takeuchi, T.Araki, Y.Nanishi, Y.Aoyagi
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(滋賀)
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] AlN～AlGaN MOCVD成長その場観察-縦型深紫外発光素子実現にむけて-(Invited)2009
- Author(s)
  武内道一、青柳克信
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学、小金井市(東京都)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 超格子はく離層を用いたAlGaN系レーザリフトオフ法によるダメージの評価2009
- Author(s)
  高橋聡, 武内道一, 荒木努, 名西やすし, 青柳克信
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山市(富山県)
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 高出力深紫外縦型半導体発光素子の開発と水浄化への応用2009
- Author(s)
  武内道一、青柳克信
- Organizer
  第12回日本水環境学会シンポジウム
- Place of Presentation
  お茶の水女子大(東京)
- Year and Date
  2009-09-14
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] 高出力深紫外縦型半導体発光素子の開発と水浄化への応用2009
- Author(s)
  武内道一、青柳克信
- Organizer
  第12回日本水環境学会シンポジウム
- Place of Presentation
  お茶の水女子大、文京区(東京都)
- Year and Date
  2009-09-14
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Disussion about the growth model of AlN folw-modulation MOCVD2009
- Author(s)
  M.Takeuchi, Y.Aoyagi
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(滋賀)
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlN～AlGaN系窒化物半導体による大面積縦型発光素子のための結晶成長技術の確立2009
- Author(s)
  武内道一
- Organizer
  第1回窒化物半導体の高品質結晶成長と素子応用
- Place of Presentation
  東北大(宮城)
- Year and Date
  2009-07-31
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlGaN量子井戸構造に対するIII族元素を用いたポストアニール効果2009
- Author(s)
  吉田薫、武内道一、荒木努、名西やすし、青柳克信
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] AlN MOCVD成長の二光束成長その場観察2009
- Author(s)
  武内道一、青柳克信
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山)
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] EpiCurve R-TTを用いた薄膜光干渉信号の分光学的解釈-成長, 再蒸発, 3D化, 2D化, etc.-2009
- Author(s)
  武内道一
- Organizer
  レイテックセミナー
- Place of Presentation
  丸文東京本社(東京)
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] Discussion about the growth model of AlN flow-modulation MOCVD2009
- Author(s)
  武内道一, 青柳克信
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(滋賀)
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] 超格子はく離層を用いたAlGaN系レーザリフトオフ法によるダメージの評価2009
- Author(s)
  高橋聡、武内道一、荒木努、名西やすし、青柳克信
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山)
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] AlGaN量子井戸構造に対するIII族元素を用いたポストアニール効果2009
- Author(s)
  吉田薫、武内道一、荒木努、名西やすし、青柳克信
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Wafer bowing control by polarity management of MOCVD AlN growth2009
- Author(s)
  M.Takeuchi
- Organizer
  Laytec Seminar
- Place of Presentation
  済州島(韓国)
- Year and Date
  2009-10-18
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Development of AlGaN-based vertical-type deep UV LEDs2009
- Author(s)
  M.Takeuchi
- Organizer
  Seoul National University Seminar
- Place of Presentation
  ソウル国立大(韓国)
- Year and Date
  2009-10-27
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] EpiCurve R-TTを用いた薄膜光干渉信号の分光学的解釈-成長, 再蒸発, 3D化, 2D化, etc.-2009
- Author(s)
  武内道一
- Organizer
  レイテックセミナー
- Place of Presentation
  丸文大阪支社(大阪)
- Year and Date
  2009-11-27
- Data Source
  KAKENHI-PUBLICLY-21016007
[Presentation] AlN～AlGaN系窒化物半導体による大面積縦型発光素子のための結晶成長技術の確立(Invited)2009
- Author(s)
  武内道一
- Organizer
  第1回窒化物半導体の高品質結晶成長と素子応用
- Place of Presentation
  東北大学、仙台市(宮城県)
- Year and Date
  2009-07-31
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] Investigation of AlN MOCVD Growth by Two-light-Beam in-situ Monitoring System2009
- Author(s)
  M.Takeuchi, Y.Aoyagi
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  済州島(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-21360013
[Presentation] 深紫外発光デバイス・超高耐圧電子デバイス対応A1GaN層用A1N/サファイアテンプレート2008
- Author(s)
  武内道一,
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  日本大学理工学部
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] 終端バリア層厚制御によるA1GaN系深紫外LEDの注入効率の向上2007
- Author(s)
  武内道一
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] MOCVD growth of vertical-type A1GaN deep-UV light emitting diodes2007
- Author(s)
  武内道一
- Organizer
  第26回電子材料シンポジウム(EMS-26)
- Place of Presentation
  滋賀県守山
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] 高品質A1Nと流量変調法短周期超格子層を用いた280nm帯深紫外LED2007
- Author(s)
  武内道一
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] N-polar AIN sacrificial layers grown by MOCVD for free-standing AlNsubstrates(Invited Talk2007
- Author(s)
  M.Takeuchi
- Organizer
  5th International Workshop on Bulk Nitride Semiconductors(IWBNS-5)
- Place of Presentation
  Salvador,Brazil
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] Two-dimensional electron gas formation in AlGaN/AlGaN heterostructures grown by MOCVD2007
- Author(s)
  M. Takeuchi,
- Organizer
  7th International Conference on Nitride Semiconductores (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] N-polar A1N sacrificial layers grown by MOCVD for free-standing A1N substrates2007
- Author(s)
  M. Takeuchi,
- Organizer
  5th International Workshop on Bulk Nitride Semiconductors (IWBNS-5)
- Place of Presentation
  Salvador, Brazil
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] MOCVD crystal growth for large scalc high efficient A1GaN Deep UV LED(invited talk)2007
- Author(s)
  M. Takeuchi
- Organizer
  Jpn. Society of Crystal growth
- Place of Presentation
  Tokyo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] Photoluminescence study of AlGaN/AlGaN quantum well structures for deep UV emitters - barrier height and well width dependence, and growth interruption effect -2007
- Author(s)
  M. Takeuchi,
- Organizer
  7th International Conference on Nitride Semiconductores (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] 高効率大面積AlGaN深紫外発光素子実現のためのMOCVD成長(招待講演)2007
- Author(s)
  武内道一
- Organizer
  日本結晶成長学会特別講演会、日本学術振興会第161委員会第54会研究会「窒化物半導体の結晶成長の現状と課題
- Place of Presentation
  東京
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] N-polar AIN sacrificial layers grown by MOCVD for free-standing A1N substrates, (invited talk)2007
- Author(s)
  M. Takeuchi
- Organizer
  Semiconductors(IWBNS-5)
- Place of Presentation
  Salvador, Brazil
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] Improvement of crystalline quality for Al- and N-polar A1N layers by modified flow-modulation MOCVD growth, (invited talk)2006
- Author(s)
  M. Takeuchi
- Organizer
  4th International Workshop on Bulk Nitride. Semiconductors(IWBNS-4)
- Place of Presentation
  Shiga, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] Improvement of crystalline quality for Al-and N-polar AlN layers bymodified flow-modulation MOCVD growth(Invited Talk)2006
- Author(s)
  M.Takeuchi
- Organizer
  4th International Workshop on Bulk Nitride Semiconductors(IWBNS-4)
- Place of Presentation
  Shiga,Japan
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207

1. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 4 results

# of Collaborated Products: 41 results
2. KUROUCHI Masahito (10452187)

# of Collaborated Projects: 3 results

# of Collaborated Products: 56 results
3. KAWASAKI KOJI (10234056)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
4. FUJIWARA Kenzo (90243980)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. KAWASHIMA Kenji (50284584)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. SATO Kazuo (30315163)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. ISHIBASHI KOJI (30211048)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. INOUE Shinnichiro (20391865)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. HIRAYAMA Hideki (70270593)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. MATSUMOTO Yuji (60302981)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. KOINUMA Hideomi (70011187)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 前田瑞夫 (10165657)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 荒川泰彦 (30134638)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. KUROSE Noriko

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

TAKEUCHI Misaichi 武内 道一

TAKEUCHI Masaichi 竹内 道一

Research Projects

Research Products

Co-Researchers

Development of new high power deep UV light emitting device

Principal Investigator

Project Period (FY)

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2光束成長その場観察技法を用いた縦型深紫外発光素子の高出力化に関する研究Principal Investigator

Principal Investigator

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Review Section

Research Institution

Research on vertical-type deep UV LEDs using new-concept substrate lift-off techniquesPrincipal Investigator

Principal Investigator

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Research Institution

Development of deep UV light emitting devices using nano-technology and the application

Principal Investigator

Project Period (FY)

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Research Institution

INFRARED LIGHT CONTROL OF SINGLE-ELECTRON SPIN IN THE NITRIDE QUANTUM DOTS AND ITS APPLICATION

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

長波長帯半導体量子ドットレーザーのための新素材・新形成法に関する研究Principal Investigator

Principal Investigator

Project Period (FY)

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Research Institution

Trial manufacturing of nanometer-scale-area photocurrent response measurement apparatus under local and resonant photoexcitation

Principal Investigator

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Research Institution

非対称二重周期超格子のワニエ・シュタルク局在現象に関する研究Principal Investigator

Principal Investigator

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Research Institution

Electric field control of opical transitions in semiconductor superlattice spaces

Principal Investigator

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[Journal Article] Formation of AlGaN and GaN epitxial layer with high p-carrier concentration by pulse supply of source2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] III-Nitride epitaxy on atomically controlled surface of sapphire substrate with slight misorientation2012

Author(s)

Journal Title

NAID

Data Source

[Journal Article] High-sensitivity ozone sensing using 280nm deep ultraviolet light-emitting diode for depletion of natural hazard ozone2012

Author(s)

Journal Title

Data Source

[Journal Article] III-Nitride epitaxy on atomically controlled surface of sapphire substrate with slight misorientation2012

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article]2012

Author(s)

TAKEUCHI Misaichi 武内道一

TAKEUCHI Masaichi 竹内道一