HORIKOSHI Yoshiji 堀越佳治

… Alternative Names

堀越佳治ホリコシヨシジ

HORIKOSHI , Yoshiji 堀越佳治

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Researcher Number	60287985
Other IDs
Affiliation (Current)	2025: 早稲田大学, 理工学術院, 名誉教授
Affiliation (based on the past Project Information) *help	2015 – 2016: 早稲田大学, 理工学術院, 名誉教授 2010 – 2015: 早稲田大学, 理工学術院, 教授 2004 – 2008: 早稲田大学, 理工学術院, 教授 2007: Waseda University, 理工学術部, 教授 2004: 早稲田大学, 理工学術院(理工学部), 教授 1999 – 2004: 早稲田大学, 理工学部, 教授
Review Section/Research Field	Principal Investigator Science and Engineering / Electronic materials/Electric materials / Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Nanomaterials/Nanobioscience / Applied materials science/Crystal engineering / 電子デバイス・機器工学 / Crystal engineering
Keywords	Principal Investigator MEE / MBE / 選択エピタキシャル成長 / 半導体ナノ構造 / 希薄磁性半導体 / 量子ドット / ナノデバイス / ballistic transport characteristics / area-selective epitaxy / photonic crystals … More / migration-enhanced epitaxy / molecular beam epitaxy / quantum dots / quantum wires / semiconductor nano-structures / AIGaAs / 収束イオン注入 / GaAsヘテロ構造 / AlGaAs / δドーピング / 弾道輸送現象 / フォトニック結晶 / 量子細線 / ヘテロ構造 / 結晶評価 / エピタキシャル成長 / 界面 / 表面 / 作成・評価技術 / 薄膜・量子構造 / 半導体 / Si/SiO2 / 解放電圧 / AlGaAs/GaAs / 励起子吸収 / タンデム太陽電池 / 超格子 / スパッタリング / Si/SiO2超格子 / AlGaAs/GaAs超格子 / 超格子太陽電池 / 分子線エピタキシー / 励起子吸収効果 / 温度安定性 / 太陽電池 / ナノチャネル / 高周波デバイス / 巨大磁気抵抗 / バリスティック / フラーレン / 弾道電子デバイス / III-V族化合物半導体 / マイグレーション・エンハンストエピタキシー(MEE) / 分子線エピタキシー(MBE) / 磁化率 / GMR / MnAs / GaMnAs / スピントロニクス / スピンFET / スピントランジスタ / 強磁性クラスター / スピンナノデバイス / シングルイオン注入 / 選択成長 / 量子構造 / 光学素子 … More Except Principal Investigator GaAs / MBE / ZnTe / PL / TEM / AlGaAs / 量子ドット / フラーレン / 深い準位 / 太陽電池 / 光スイッチ / HEMT / 有機・無機半導体ヘテロ界面 / Transistor / Impurity doping / Ordered dopant array / Radom dopant fluctuation / Impurity atom / Silicon / Semiconductor / Single ion implantation / 閾値電圧 / MOSFET / 半導体デバイス / 点欠陥 / ナノデバイス / シングルイオン注入法 / トランジスタ / 不純物ドーピング / 不純物規則配列 / 不純物ゆらぎ / 不純物原子 / シリコン / 半導体 / 単一イオン注入法 / Superlattice / UV-sensor / Homo-Substrate / Moleclaur Beam Epitaxy / ZnCdMgS / 超格子 / 紫外線センサ / ホモエピタキシャル基板 / 分子線エピタキシ / model experiment / detector / HBT structure / heretojunction / millimeter wave / マイクロ波帯モデル実験 / HBT / サブミリ波 / マイクロ波モデル実験 / 検出器 / HBT構造 / ヘテロ接合 / ミリ波 / XPS / BAlN / BGaN / B固体ソース / RFプラズマ / ダメージ / ホール / ラマン / 窒素プラズマ / BN / AlN / 窒化物半導体 / グラフェン / 有機半導体デバイス / ナノ表面界面 / 薄膜・量子材料 / 電気・電子材料 / RHEED / MEE / ウエット処理 / ナノテクノロジー / 分子認識 / マイクロシステム / 分子ナノ工学 / ウェット処理 / ナノ改質 / ナノ構造配列 / 酵素センサ / マイクロ流路 / 酸素富化膜 / 磁気記録 / 酸素センサ / 一分子観察 / 生体分子 / プロトタイプ / ナノ理工学研究機構 Less

Growth of BN on graphene by RF-MBE
- Principal Investigator
  
  Makimoto Toshiki
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Waseda University
Memory devices using heterointerfaces of fullerene and GaAs
- Principal Investigator
  
  Nishinaga Jiro
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
  Waseda University
Development of solar cells with high stability at elevated temperaturesPrincipal Investigator
- Principal Investigator
  
  HORIKOSHI Yoshiji
- Project Period (FY)
  2011 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Waseda University
Development of new devices using fullerene and GaAs heterostructures.
- Principal Investigator
  
  NISHINAGA Jiro
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Waseda University
Development of new high-speed electronic devices using 1D quantum structuresPrincipal Investigator
- Principal Investigator
  
  HORIKOSHI , Yoshiji
- Project Period (FY)
  2005 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Waseda University
Novel semiconductors with controlled both single-atom number and position
- Principal Investigator
  
  ODOMARI Iwao
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  Waseda University
イオン注入法を利用したナノ構造スピンデバイスに関する研究Principal Investigator
- Principal Investigator
  
  堀越佳治
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Waseda University
Active Compensation of the substrate temperature for the growth of high quality II-VI compound films
- Principal Investigator
  
  KOBAYASHI Masakazu
- Project Period (FY)
  2004 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Waseda University
単一イオン注入法による半導体ナノ構造スピンデバイスPrincipal Investigator
- Principal Investigator
  
  堀越佳治
- Project Period (FY)
  2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Waseda University
微小ディスクレーザー結合による、集積デバイスに関する研究Principal Investigator
- Principal Investigator
  
  堀越佳治
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Waseda University
Electron Quantum Correlation in in Semiconductor Quantum-Dot lattice StructuresPrincipal Investigator
- Principal Investigator
  
  HORIKOSHI Yoshiji
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Waseda University
ナノ構造配列を基盤とする分子ナノ工学の構築とマイクロシステムへの展開
- Principal Investigator
  
  OHDOMARI Iwao
- Project Period (FY)
  2001 – 2005
- Research Category
  
  Grant-in-Aid for COE Research
- Research Institution
  Waseda University
Development of a Heterojunction Structure Detector in the Submillimeter Wave Region
- Principal Investigator
  
  SUZUKI Tetsu
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Sendai National College of Technology

[Book] Molecular beam epitaxy2012
- Author(s)
  Yoshiji Horikoshi
- Total Pages
  7
- Publisher
  Migration enhanced epitaxy for low dimensional structures
- Data Source
  KAKENHI-PROJECT-23360163
[Book] Growth and characterization of fullerene/GaAs interfaces and C <60> doped GaAs layers, Crystal Growth : Theory, Mechanism, and Morphology (Editors : N.A.Mancuso and J.P.Isaac)2011
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Publisher
  Nova Science Publishers (printing)
- Data Source
  KAKENHI-PROJECT-20760203
[Book] Crystal Growth : Theory, Mechanism, and Morphology2011
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Total Pages
  30
- Publisher
  Nova Science Publishers
- Data Source
  KAKENHI-PROJECT-20760203
[Book] Progress in Fullerene Research2007
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Publisher
  Nova Science Publishers
- Data Source
  KAKENHI-PROJECT-17201026
[Book] Progress in Fullerene Research2007
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Total Pages
  21
- Publisher
  Nova Science Publishers
- Data Source
  KAKENHI-PROJECT-17206031
[Book] "Epitaxial growth of undoped and multivalent impurity-doped C60 films by molecular beam epitaxy", Progress in Fullerene Research2007
- Author(s)
  J. Nishinaga and Y. Horikoshi(分担執筆)
- Publisher
  Nova Science Publishers
- Data Source
  KAKENHI-PROJECT-17206031
[Book] "Semiconductor Microstructure Fabrication by Area Selective Epitaxy for Optical Integrated Circuit Applications" Photonics Based on Wavelength Integration and Manipulation2005
- Author(s)
  Yoshiji Horikoshi, Koji Onomitsu
- Publisher
  IPAP Books 2
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] High absorption efficiency of AlGaAs/GaAs superlattice solar cells2015
- Author(s)
  Jiro Nishinaga, Atsushi Kawaharazuka and Yoshiji. Horikoshi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54
- NAID
  210000145127
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-23360163
[Journal Article] High absorption efficiency of AlGaAs/GaAs superlattice solar cells2015
- Author(s)
  Jiro Nishinaga, Atsushi Kawaharazuka and Yoshiji Horikoshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 5 Pages: 052301-052301
- DOI
  10.7567/jjap.54.052301
- NAID
  210000145127
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420298, KAKENHI-PROJECT-25420299
[Journal Article] Effects of surface barrier layer in AlGaAs/GaAs solar cells2015
- Author(s)
  39.Hiroyuki Urabe, Makoto Kuramoto, Tomohiro Nakano, Atsushi Kawaharazuka, Toshiki Makimoto, Yoshiji Horikoshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: in print Pages: 22742-22742
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-23360163
[Journal Article] Optical properties of AlxGa1−xAs/GaAs superlattice solar cells2015
- Author(s)
  Makoto Kuramoto, Hiroyuki Urabe, Tomohiro Nakano, Atsushi Kawaharazuka, Jiro Nishinaga, Toshiki Makimoto, Yoshiji Horikoshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: in press Pages: 333-336
- DOI
  10.1016/j.jcrysgro.2015.03.024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420298, KAKENHI-PROJECT-25420299
[Journal Article] Recombination current in AlGaAs/GaAs superlattice solar-cells grown by molecular beam epitaxy2015
- Author(s)
  A. Kawaharazuka, J. Nishinaga, Y. Horikoshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: in press Pages: 326-329
- DOI
  10.1016/j.jcrysgro.2015.03.047
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420298, KAKENHI-PROJECT-25420299
[Journal Article] Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy2015
- Author(s)
  .Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto and Yoshiji Horikoshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: in print Pages: 203-206
- DOI
  10.1016/j.jcrysgro.2015.02.059
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-23360163
[Journal Article] Optical properties of AlxGa1-xAs/GaAs superlattice solar cells2015
- Author(s)
  40.Makoto Kuramoto, Hiroyuki Urabe, Tomohiro Nakano, Atsushi Kawaharazuka, Jiro Nishinaga, Toshiki Makimoto and Yoshiji Horikoshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: in print Pages: 22770-22770
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-23360163
[Journal Article] Optical Properties of Amorphous and Nanostructure Si/SiO2 Quantum Wells2014
- Author(s)
  30.T. Takeuchi, M. Kondo, M. Fujuta, A. Kawaharazuka, and Y. Horikoshi
- Journal Title
  
  J. Nano. Res.
  
  Volume: 26 Pages: 59-62
- DOI
  10.4028/www.scientific.net/jnanor.26.59
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-23360163
[Journal Article] Selective area growth of InAs nanostructures on faceted GaAs microstructure by migration enhanced epitaxy2013
- Author(s)
  M. Zander, J. Nishinaga, and Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 378 Pages: 480-484
- DOI
  10.1016/j.jcrysgro.2012.12.089
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-23760293, KAKENHI-PROJECT-25420299
[Journal Article] Crystalline and electrical characteristics of C60 uniformly doped GaAs layers2013
- Author(s)
  J. Nishinaga and Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 378 Pages: 81-84
- DOI
  10.1016/j.jcrysgro.2012.12.044
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-23760293, KAKENHI-PROJECT-25420299
[Journal Article] Controlled nucleation and optical properties of InAs quantum dots grown on faceted GaAs microstructures2013
- Author(s)
  M. Zander, J. Nishinaga, H. Gotoh, and Y. Horikoshi
- Journal Title
  
  Phys. Status Solidi
  
  Volume: C 10, Issue: 11 Pages: 1500-1504
- DOI
  10.1002/pssc.201300274
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-25420299
[Journal Article] High Absorption Efficiency Superlattice Solar Cells by Excitons2013
- Author(s)
  J. Nishinaga, A. Kawaharazuka, K. Onomitsu, and Y. Horikoshi
- Journal Title
  
  J. Appl. Phys. 52
  
  Volume: 52 Issue: 11R Pages: 112302-112302
- DOI
  10.7567/jjap.52.112302
- NAID
  40019883484
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-25420298, KAKENHI-PROJECT-25420299
[Journal Article] Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe22013
- Author(s)
  S. Thiru, M. Fujita, A. Kawaharazuka, and Y. Horikoshi
- Journal Title
  
  Appl. Phys. A
  
  Volume: 113 Issue: 2 Pages: 257-261
- DOI
  10.1007/s00339-013-7951-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-25420298
[Journal Article] Characteristics of CuGaSe2 layers grown on GaAs substrates2013
- Author(s)
  M.Fujita, A. Kawaharazuka, and Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 378 Pages: 154-157
- DOI
  10.1016/j.jcrysgro.2012.12.171
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-25420298
[Journal Article] Successful growth of Cu2Se-free CuGa2Se2 by Migration-Enhanced Epitaxy2012
- Author(s)
  M.Fujita, T.Sato, T.Kitada, A.Kawaharazuka, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B
  
  Volume: 30 Issue: 2
- DOI
  10.1116/1.3690456
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760233, KAKENHI-PROJECT-23360163
[Journal Article] Growth of CuGaSe2 Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy2011
- Author(s)
  M.FUJITA, A.KAWAHARAZUKA, J.NISHINAGA, K.H.PLOOG, Y.HORIKOSHI
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50 Issue: 12R Pages: 125502-125502
- DOI
  10.1143/jjap.50.125502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760233, KAKENHI-PROJECT-23360163
[Journal Article] Effect of excitons in AlGaAs/GaAs superlattice solar cells2011
- Author(s)
  J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50 Issue: 5R Pages: 052302-052302
- DOI
  10.1143/jjap.50.052302
- NAID
  40018812632
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760233, KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-23760293
[Journal Article] Area selective epitaxy of InAs on GaAs(001) and GaAs(111) A by migration enhanced epitaxy2011
- Author(s)
  M.Zander, J.Nishinaga, K.Iga, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth
  
  Volume: (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy2011
- Author(s)
  A.Kawaharazuka, K.Onomitsu, J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth
  
  Volume: 323 Issue: 1 Pages: 504-507
- DOI
  10.1016/j.jcrysgro.2010.12.051
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760233, KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-23760293
[Journal Article] Growth and characterization of C60/GaAs interfaces and C60 doped GaAs2011
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth
  
  Volume: (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Effect of excitons in AlGaAs/GaAs superlattice solar cells2011
- Author(s)
  J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: (in press)
- NAID
  40018812632
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy2011
- Author(s)
  A.Kawaharazuka, K.Onomitsu, J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth
  
  Volume: (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Growth and characterization of C60/GaAs interfaces and C60 doped GaAs2011
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth
  
  Volume: 323 Issue: 1 Pages: 135-139
- DOI
  10.1016/j.jcrysgro.2010.11.068
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-23760293
[Journal Article] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2011
- Author(s)
  J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
- Journal Title
  
  Physica Status solidi
  
  Volume: C9(2) Pages: 330-333
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163
[Journal Article] Electrical properties of C60 delta-doped GaAs and AlGaAs layers grown by MBE2010
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Journal Title
  
  Physica Status solidi C
  
  Volume: 7 Pages: 2486-2489
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Electrical properties of C <60> delta-doped GaAs and AlGaAs layers grown by MBE2010
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Journal Title
  
  Physica Status solidi C 7
  
  Pages: 2486-2489
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Structural properties of C60-multivalent metal composite layers grown by molecular beamepitaxy2010
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B
  
  Volume: 28
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Structural properties of C60-multivalent metal composite layers grown by molecular beam epitaxy2010
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] GaAs基板上フラーレンC60の結晶成長とC60 doped GaAsの電気的特性2010
- Author(s)
  西永慈郎、堀越佳治
- Journal Title
  
  表面科学
  
  Volume: 31 Pages: 632-636
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Structural properties of C <60> multivalent metal composite layers grown by molecular beam epitaxy2010
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B 28
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] GaAs基板上フラーレンC <60>の結晶成長とC <60> doped GaAsの電気的特性2010
- Author(s)
  西永慈郎、堀越佳治
- Journal Title
  
  表面科学 31
  
  Pages: 632-636
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Electrical properties of C60 delta-doped CaAs and AlGaAs layers grown by MBE2010
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Journal Title
  
  Physica Status solidi C (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] The effects of rapid thermal annealing of doubled quantum dots grown by molecular beam epitaxy2009
- Author(s)
  S. Suraprapapioh, Y. M. Shen, Y. Fainman, Y. Horikoshi, C. W. Tu
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 1791-1794
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Investigation of C60 Epitaxial Growth Mechanism on GaAs Substrates2009
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  120001351264
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] RHEED intensity oscillation of C60 layer epitaxial growth2009
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 2227-2231
- NAID
  120001351265
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Effect of the MgO substrate on the growth of GaN2009
- Author(s)
  R. Suzuki. A. Kawaharazuka., Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 2021-2024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Crystallne and electrical characteristics of C60-doped GaAs films2009
- Author(s)
  J. Nishinaga, T. Takada, T. Hayashi, Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 2232-2235
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Growth of GaN with warm ammonia by molecular beam epitaxy2009
- Author(s)
  A. Kawaharazuka, T. Yoshizaki, K. H. PIoog, Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 2025-2028
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Investigation of C60 Epitaxial Growth Mechanism on GaAs Substrates2009
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Journal Title
  
  Jpn. J. Appl. Phys. 48
- NAID
  120001351264
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Crystalline and electrical characteristics of C60?doped GaAs films2009
- Author(s)
  J. Nishinaga, T. Takada, T. Hayashi, Y. Horikoshi
- Journal Title
  
  Journal of Crystal Growth (in press)
- NAID
  120001351266
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Area selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources2008
- Author(s)
  A. Kawaharazuka, I. Yoshiba, Y. Horikoshi
- Journal Title
  
  Appl. Surf. Sci. 255
  
  Pages: 737-739
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Area selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources2008
- Author(s)
  A. Kawaharazuka, I. Yoshiba, and Y. Horikoshi
- Journal Title
  
  Appl. Surf. Sci. 255
  
  Pages: 737-739
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] RHEED intensity oscillations of C60 growth on GaAs substrates2008
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Journal Title
  
  Appl. Surf. Sci. 255
  
  Pages: 682-684
- NAID
  120001351263
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] High resolution X-ray photoelectron speotrosoopy of beta gallium oxide films deposited by ultra high vacuum radio frequency magnetron sputtering2008
- Author(s)
  T. Takeuohi, H. Ishikawa, N. Takeuchi, Y. Horikoshi
- Journal Title
  
  Thin Solid Films 516
  
  Pages: 4593-4597
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Amorphous CuxGa1-xO Films Deposition by Ultrahigh Vacuum Radio Frequency Magnetron Sputtering2007
- Author(s)
  H.Ishikawa, N.Takeuchi, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 46
  
  Pages: 2527-2529
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy2007
- Author(s)
  T.Chavanapanee, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 225-229
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Area selective epitaxy of GaAs native oxide mask by molecular beam epitaxy2007
- Author(s)
  I.Yoshida, T.Iwai, T.Uehara, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 190-193
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Area selective growth of GaAs by migration-enhanced epitaxy2007
- Author(s)
  Y. Horikoshi, T. Uehara, T. Iwai, and I. Yoshiba
- Journal Title
  
  Phys. Stat. Sol. B 244
  
  Pages: 2697-2706
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] ZnO epitaxial films grown by flux-modulated RF-MBE2007
- Author(s)
  K.Hirano, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 370-372
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Be and Mg co-doping in GaN2007
- Author(s)
  A. Kawaharazuka, T. Tanimoto, K. Nagai, Y. Tanaka, Y. Horikoshi
- Journal Title
  
  J. Crystal Growth 301-302
  
  Pages: 414-416
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Enhanced magnetization by modulated Mn delta doping in GaAs2007
- Author(s)
  K. Yanagisawa, S. Takeuchi, H. Yoshitake, K. Onomitsu, Y. Horikoshi
- Journal Title
  
  J. Crystal Growth 301-302
  
  Pages: 634-637
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Characteristics of multivalent impurity doped C60 films grown by MBE2007
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 687-691
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Growth mechanism of GaAs microdisk structures by Area-Selective Epitaxy using Migration-Enhanced Epitaxy2007
- Author(s)
  T.Iwai, T.Toda, T.Uehara, I.Yoshiba, Y.Horikoshi
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 514-517
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Be and Mg co-doping in GaN2007
- Author(s)
  A.Kawaharazuka, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 414-416
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Growth mechanism of GaAs microdisk structures by Area-Selective Epitaxy using Migration-Enhanced Epitaxy2007
- Author(s)
  t.Iwai, T.Toda, T.Uehara, I.Yoshiba, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys 46
  
  Pages: 514-517
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Enhanced magnetization by modulated Mn delta doping in GaAs2007
- Author(s)
  K.Yanagisawa, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 634-637
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Enhanced magnetization by modulated Mn delta doping in GaAs2007
- Author(s)
  K.yanagisawa, S.takeuchi, H.Yoshitake, Y.horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 634-637
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Area selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources2007
- Author(s)
  A.Kawaharazuka, I.Yoshiba, Y.Horikoshi
- Journal Title
  
  Appl.Surf.Sci. (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Area-selective epitaxial growth of GaAs(111)A substrates by Migration-Enhanced Epitaxy2007
- Author(s)
  T.Uehara, T.Iwai, I.Yoshiba, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys 46
  
  Pages: 496-501
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Low-temperature transport and ferromagnetism in GaAs-based structures with Mn2007
- Author(s)
  V.A. Kulbachinskii, P.V. Gurin, Y.A. Danilov, E.I. Malysheva, Y. Horikoshi, K. Onomitsu
- Journal Title
  
  J. Exp. Theo. Phys. 105
  
  Pages: 170-173
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy2007
- Author(s)
  T. Chavanapanee, Y. Horikoshi
- Journal Title
  
  J. Crystal Growth 301-302
  
  Pages: 225-229
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Characterization of heavily Sn-doped GaAs grown by migration-enhanJced2007
- Author(s)
  T.Chavanapanee, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 225-229
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] 12007
- Author(s)
  I.Yoshiba, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 190-193
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Low-temperature transport and ferromagnetism in GaAs-based structures with Mn2007
- Author(s)
  V.A.Kulbachinskii, Y.Horikoshi
- Journal Title
  
  J.Exp.Theo.Phys 105
  
  Pages: 170-173
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] RHEED intensity oscillations,of C60 growth2007
- Author(s)
  J.Nishinaga, A.Kawaharazuka, Y.Horikoshi
- Journal Title
  
  Appl.Surf.Sci. (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Area-selective epitaxial growth of GaAs on GaAs (111)A substrates by Migration-Enhanced Epitaxy2007
- Author(s)
  Uehara, T. Iwai, I. Yoshiba, and Y. Horikoshi
- Journal Title
  
  Jpn. J. Appl. Phys 46
  
  Pages: 496-501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] ZnO epitaxial films grown by flux-modulated RF-MBE2007
- Author(s)
  K.Hirano, M.Fujita, M.Sasajima, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 370-372
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Characteristics of multivalent impurity doped C60 films grown by MBE2007
- Author(s)
  J.Nishinaga, T.Akihara, A.Kawaharazuka, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 687-691
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Be and Mg co-doping in GaN2007
- Author(s)
  A.Kawaharazuka, T.Tanimoto, K.Nagai, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 414-416
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Area selective growth of GaAs by migration-enhanced epitaxy2007
- Author(s)
  Y.Horikoshi
- Journal Title
  
  Phys.Stat.Sol.B 244
  
  Pages: 2697-2706
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Area selective growth of GaAs by migration-enhanced epitaxy2007
- Author(s)
  Y.Horikoshi, T.Uehara
- Journal Title
  
  Phys.Stat.Sol.B 244
  
  Pages: 2697-2706
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] MBE growth of GaN on MgO substrate2007
- Author(s)
  R.Suzuki, A.Kawaharazuka, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 478-481
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Characteristics of multivalent impurity doped C60 films grown by MBE2007
- Author(s)
  J. Nishinaga, T. Aihara, A. Kawaharazuka, Y. Horikoshi
- Journal Title
  
  J. Crystal Growth 301-302
  
  Pages: 687-691
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures2006
- Author(s)
  T.Chavanapranee, Y.Horikoshi
- Journal Title
  
  J. Appl. Phys. Vol. 100(5)
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN2006
- Author(s)
  K.T.Liu, Y.Horikoshi
- Journal Title
  
  Microelectronics Journal 37(5)
  
  Pages: 417-420
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Area-selective epitaxial growth of GaAs on GaAs(111)A substrates by Migration-Enhanced Epitaxy2006
- Author(s)
  T.Uehara, T.Iwai, I.Yoshiba, Y.Horikoshi
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 496-501
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Transparent RuOx contacts on n-ZnO2006
- Author(s)
  T.K.Lin, S.J.Chang, K.T.Lam, Y.S.Sun, Y.Horikoshi
- Journal Title
  
  J. Electrochem. Soc. Vol. 153(7)
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Transparent RuOx contacts on n-ZnO2006
- Author(s)
  T.K.Lin, S.J.Chang, B.R.Huang, K.T.Lam, Y.S.Sun, Y.Horikoshi
- Journal Title
  
  J.Electrochem.Soc. 153(7)
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Molecular beam epitaxial growth of ZnMgO/ZnO/ZnMgO single quantum well structure on Si(111) substrate2006
- Author(s)
  M.Fujita, T.Kosaka, Y.Deesirapipat, Y.Horikoshi
- Journal Title
  
  J. Vac. Sci. Technol. B. Vol. 24(3)
  
  Pages: 1668-1670
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN2006
- Author(s)
  K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang, Y. Horikoshi
- Journal Title
  
  Microelectronics Journal 37(5)
  
  Pages: 417-420
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN2006
- Author(s)
  K.T.Liu, Y.K.Su, R.W.Chuang, S.J.Chang, Y.horikoshi
- Journal Title
  
  Microelectronics Journal Vol.37(5)
  
  Pages: 417-420
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Electrical and structural properties of heavily Ge-doped GaAs grown by molecular-beam epitaxy2006
- Author(s)
  T.Chavanapranee, D.Ichiryu, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.45(6A)
  
  Pages: 4921-4925
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Electrical and structural properties of heavily Ge-doped GaAs grown by molecular-beam epitaxy2006
- Author(s)
  T.Chavanapranee, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 45(6A)
  
  Pages: 4921-4925
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Electrical and structural properties of heavily Ge-doped GaAs grown by molecular-beam epitaxy2006
- Author(s)
  T. Chavanapranee, D. Ichiryu, Y. Horikoshi
- Journal Title
  
  Jpn. J. Appl. Phys. 45(6A)
  
  Pages: 4921-4925
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Molecular beam epitaxial growth of ZnMgO/ZnO/ZnMgO single quantum well structure on Si(111) substrate2006
- Author(s)
  M.Fujita, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B. 24(3)
  
  Pages: 1668-1670
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Nanoscale selective area epitaxy of C_<60> crystals on GaAs by molecular beam epitaxy2006
- Author(s)
  J. Nishinaga, T. Aihara, T. Toda, F. Matsutani, Y. Horikoshi
- Journal Title
  
  J. Vac. Sci. Technol. B. 24(3)
  
  Pages: 1587-1590
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Molecular beam epitaxial growth ob ZnMgO/ZnO/ZnMgO single quantum well structure on Si(111) substrate2006
- Author(s)
  M.Fujita, R.Suzuki, M.Sasajima, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B Vol.24(3)
  
  Pages: 1668-1670
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures2006
- Author(s)
  T.Chavanapranee, Y.Horikoshi
- Journal Title
  
  J.Appl.Phvs. Vol.100(5)
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Molecular beam epitaxial growth of ZnMgO/ZnO/ZnMgO single quantum well structure on Si(111) substrate2006
- Author(s)
  M. Fujita, R. Suzuki, M. Sasajima, T. Kosaka, Y. Deesirapipat, Y. Horikoshi
- Journal Title
  
  J. Vac. Sci. Technol. B. 24(3)
  
  Pages: 1668-1670
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Nanoscale selective area epitaxy of C60 crystals on GaAs by molecular beam epitaxy2006
- Author(s)
  J.Nishinaga, T.Aihara, T.Toda, F.Matsutani, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B Vol.24(3)
  
  Pages: 1587-1590
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Electrical and structural properties of heavily Ge-doped GaAs grown by molecular-beam epitaxy2006
- Author(s)
  T.Chavanapranee, D.Ichiryu, Y.Horikoshi
- Journal Title
  
  Jpn. J. Appl. Phys. Vol. 45(6A)
  
  Pages: 4921-4925
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Nanoscale selective area epitaxy of C_<60> crystals on GaAs by molecular beam epitaxy2006
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B 24(3)
  
  Pages: 1587-1590
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures2006
- Author(s)
  T.Chavanapranee, Y.Horikoshi
- Journal Title
  
  J.Appl.Phys. 100(5)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Nanoscale selective area epitaxy of C60 crystals on GaAs by molecular beam epitaxy2006
- Author(s)
  J.Nishinaga, T.Aihara, T.Toda, F.Matsutani, Y.Horikoshi
- Journal Title
  
  J. Vac. Sci. Technol. B. Vol. 24(3)
  
  Pages: 1587-1590
- NAID
  120001351262
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures2006
- Author(s)
  T. Chavanapranee, Y. Horikoshi
- Journal Title
  
  J. Appl. Phys. 100(5), No.054505
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices2005
- Author(s)
  M.Kobayashi, J.Ueno, M.Enami, S.Katsuta, A.Ichiba, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 273-277
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Mechanical and optical characteristics of A1-doped C60 films2005
- Author(s)
  J.Nishinaga, T.Aihara, H.Yamagata, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 633-637
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] C and N co-implantation in Be-doped GaN2005
- Author(s)
  K.T.Liu, Y.K.Su, R.W.Chuang, S.J.Chang, Y.Horikoshi
- Journal Title
  
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20
  
  Pages: 740-744
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE"2005
- Author(s)
  K.Onomitsu, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth 278
  
  Pages: 699-703
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] ZnO MSM photodetectors with Ru contact electrodes2005
- Author(s)
  T.K.Lin, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 281
  
  Pages: 513-517
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005
- Author(s)
  K.Onomitsu, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth 278
  
  Pages: 699-703
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] C and N co-implantation in Be-doped GaN2005
- Author(s)
  K.T. Liu, Y.K. Su, R.W. Chuang, S. I. Chang, Y. Horikoshi
- Journal Title
  
  Semi. Sci. Technol. 20(8)
  
  Pages: 740-744
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Crack-free ZnO layer growth on glass substrates by MgO-buffer Layer2005
- Author(s)
  Y.Deesirapipat, C.Antarasena, H.Fujita, M.Sasajima, R.Suzuki, Y.Horikoshi
- Journal Title
  
  Inst.Phys.Conf.Ser (in press)
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN2005
- Author(s)
  K.T.Liu, Y.K.Su, S.J.Chang, Y.Horikoshi
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 73702-73702
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Effects of MgO-buffer layer on the structural and optical properties of polycrystalline ZnO films grown on glass substrate2005
- Author(s)
  Y.Deesirapipat, M.Fujita, M.Sasajima, R.Suzuki, C.Antarasena, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 44
  
  Pages: 5150-5155
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Molecular abeam epitaxial growth of hexagonal ZnMgO films on Si(111) substrates using thin MgO buffer Layer2005
- Author(s)
  M.Fujita, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 293-298
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005
- Author(s)
  K.Onomitsu, H.Fukui, Y.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth, (in press)
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] C and N co-implantation in Be-doped GaN2005
- Author(s)
  K.T.Liu, Y.Horikoshi
- Journal Title
  
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20(8)
  
  Pages: 740-744
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Mechanical and optical characteristics of Al-doped C60 films2005
- Author(s)
  J.Nishinaga, T.Aihara, H.Yamagata, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 633-637
- NAID
  120001351261
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Crack-free ZnO layer growth on glass substrates by MgO-buffer Layer2005
- Author(s)
  Y.Deesirapipat, C.Antarasena, M.Fujita, M.Sasajima, Y.Horikoshi
- Journal Title
  
  Inst.Phys.Conf.Ser. 184
  
  Pages: 307-310
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN2005
- Author(s)
  K.T.Liu, Y.K.Su, S.J.Chang, Y.Horikoshi
- Journal Title
  
  J.Appl.Phys. 98.(7)
  
  Pages: 73702-73702
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] ZnO MSM photodetectors with Ru contact electrodes2005
- Author(s)
  T.K.Lin, S.J.Chang, Y.K.Su, B.R.Huang, M.Fujita, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 281
  
  Pages: 513-517
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] Crack-free ZnO laver growth on glass substrates by MgO-buffer Layer2005
- Author(s)
  Y.Deesirapipat, C.Antarasena, M.Fujita, M.Sasajima, Y.Horikoshi
- Journal Title
  
  Inst.Phys.Conf.Ser. 184
  
  Pages: 307-310
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] Molecular abeam epitaxial growth of hexagonal ZnMgO films on Si(111)substrates using thin MgO buffer Layer2005
- Author(s)
  M.Fujita, M.Sasajima, Y.Deesirapipat, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 293-298
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Mechanical and optical characteristics of Al-doped C60 films2005
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 633-637
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Effects of MgO-buffer layer on the structural and optical properties of polycrystalline ZnO films grown on glass substrate2005
- Author(s)
  Y.Deesirapipat, M.Fujita, M.Sasajima, C.Antarasena, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys.PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44
  
  Pages: 5150-5155
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Crack-free ZnO layer growth on glass substrates by MgO-buffer Layer2005
- Author(s)
  Y.Deesirapipat, M.Sasajima, Y.Horikoshi
- Journal Title
  
  Inst.Phys.Conf.Ser. 184
  
  Pages: 307-310
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Magnesium/nitrogen and beryllium/nitrogen co-implantation into GaN"2005
- Author(s)
  K.T.Liu, Y.Horikoshi
- Journal Title
  
  J.Appl.Phys. 98(7)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth 278
  
  Pages: 699-703
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] Crack-free ZnO layer growth on grass substrates by MgO-buffer Layer2005
- Author(s)
  Y.Deesirapipat, Y.Horikoshi
- Journal Title
  
  Inst.Phys.Conf.Ser. 184
  
  Pages: 307-310
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Mechanical and optical characteristics of Al-doped C60 films2005
- Author(s)
  J.Nishinaga, T.Aihara, H.Yamagata, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth (in press)
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Mechanical and optical characteristics of Al-doped C_<60> films2005
- Author(s)
  J. Nishinaga, T. Aihara, H. Yamagata, Y. Horikoshi
- Journal Title
  
  J. Crystal Growth 278
  
  Pages: 633-637
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices2005
- Author(s)
  M.Kobayashi, J.Ueno, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 273-277
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] ZnO MSM photodetectors with Ru contact electrodes2005
- Author(s)
  T.K.Lin, S.J.Chang, Y.K.Su, B.R.Huang, M.Fujita, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 281
  
  Pages: 513-517
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Effects of MgO-buffer layer on the structural and optical properties of polycrystalline ZnO films grown on glass substrate2005
- Author(s)
  Y.Deesirapipat, M.Fujita, M.Sasajima, R.Suzuki, C.Antarasena, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.44(7A)
  
  Pages: 5150-5155
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Mechanical and optical characteristics of Al-doped C_<60> films2005
- Author(s)
  J.Nishinaga, T.Aihara, H.Yamagata, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 633-637
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Molecular abeam epitaxial growth of hexagonal ZnMgO films on Si(111) substrates using thin MgO buffer Layer2005
- Author(s)
  M.Fujita, M.Sasajima, Y.Deesirapipat, Y.Horikoshi
- Journal Title
  
  Crystal Growth (in press)
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth (in press)
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Molecular abeam epitaxial growth of hexagonal ZnMgO films on Si(111)substrates using thin MgO buffer Layer2005
- Author(s)
  M.Fujita, M.Sasajima, Y.Deesirapipat, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth Vol.278
  
  Pages: 293-298
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Effects of MgO-buffer layer on the structural and optical properties of polycrystalline ZnO films grown on glass substrate2005
- Author(s)
  Y.Deesirapipat, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys.PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 (7A)
  
  Pages: 5150-5155
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth Vol.278
  
  Pages: 699-703
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] C and N co-implantation in Be-doped GaN2005
- Author(s)
  K.T.Liu, Y.K.Su, R.W.Chuang, S.J.Chang, Y.Horikoshi
- Journal Title
  
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20(8)
  
  Pages: 740-744
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices2005
- Author(s)
  M.Kobayashi, J.Ueno, M.Enami, S.Katsuta, A.Ichiba, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 273-277
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] Molecular abeam epitaxial growth of hexagonal ZnMgO films on Si(111) substrates using thin MgO buffer Layer2005
- Author(s)
  M.Fujita, M.Sasajima, Y.Deesirapipat, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 293-298
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN2005
- Author(s)
  K.T.Liu, Y.K.Su, S.J.Chang, Y.Horikoshi
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 73702-73702
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] C and N co-implantation in Be-doped GaN2005
- Author(s)
  K.T.Liu, Y.Horikoshi
- Journal Title
  
  Semi.Sci.Technol. 20(8)
  
  Pages: 740-744
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] ZnO MSM photodetectors with Ru contact electrodes"2005
- Author(s)
  T.K.Lin, S.J.Chang, Y.K.Su, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 281
  
  Pages: 513-517
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Mechanical and optical characteristics of Al-doped C60 films2005
- Author(s)
  J.Nishinaga, T.Aihara, H.Yamagata, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 633-637
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] Molecular abeam epitaxial growth of hexagonal ZnMgO films on Si(111) substrates using thin MgO buffer Layer2005
- Author(s)
  M.Fujita, M.Sasajima, Y.Deesirapipat, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 293-298
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth (in press)
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices2005
- Author(s)
  M.Kobayashi, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 273-277
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices2005
- Author(s)
  M.Kobayashi, J.Ueno, M.Enami, S.Katsuta, A.Ichiba, K.Ogura, K.Onomitsu, Y.Horikoshi
- Journal Title
  
  Crystal Growth (in press)
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Effects of MgO-buffer layer on the structural and optical properties of polycrystalline ZnO films grown on glass substrate2005
- Author(s)
  Y.Deesirapipat, M.Fujita, M.Sasajima, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 44(7A)
  
  Pages: 5150-5155
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Effects of MgO-buffer layer on the structural and optical properties of polycrystalline ZnO films grown on glass substrate2005
- Author(s)
  Y.Deesirapipat, M.Fujita, M.Sasajima, C.Antarasena, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys.PART 1-REGULAR PAPERS BRIEF CONJMUNICATIONS & REVIEW PAPERS 44
  
  Pages: 5150-5155
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005
- Author(s)
  K. Onomitsu, H. Fukui, T. Maeda, Y. Hirayama, Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth 278
  
  Pages: 699-703
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Mechanical and optical characteristics of Al-doped C_<60> films2005
- Author(s)
  J.Nishinaga, T.Aihara, H.Yamagata, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth Vol.278
  
  Pages: 633-637
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Magnesium/nitrogen and beryllium/nitrogen co-implantation into GaN2005
- Author(s)
  K.T. Liu, Y.K. Su, S.J. Chang, Y. Horikoshi
- Journal Title
  
  J. Appl. Phys. 98(7), No.073702
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Molecular abeam epitaxial growth of hexagonal ZnMgO films on Si(111) substrates using thin MgO buffer Layer2005
- Author(s)
  M.Fujita, M.Sasajima, Y.Deesirapipat, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 293-298
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth 278
  
  Pages: 699-703
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Mechanical and optical characteristics of Al-doped C_<60> films2005
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth 278
  
  Pages: 633-637
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201026
[Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth 278
  
  Pages: 699-703
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN2005
- Author(s)
  K.T.Liu, Y.Horikoshi
- Journal Title
  
  J.Appl.Phys. 98, (7), No.073702
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] C and N co-implantation in Be-doped GaN2005
- Author(s)
  K.T.Liu, Y.K.Su, R.W.Chuang, S.J.Chang, Y.Horikoshi
- Journal Title
  
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20
  
  Pages: 740-744
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] Magnetic and electric field effect of photoluminescence of excitons bound to nitrogen atom pairs in GaAs2004
- Author(s)
  K.Onomitsu, T.Okabe, T.Makimoto, H.Saito, M.Ramsteiner, H.Zhu, A.Kawaharazuka, K.Ploog, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 43
- NAID
  10013161178
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitacy2004
- Author(s)
  T.Tatsumi, M.Fujita, N.Kawamoto, M.Sasajima, Y.Horikoshi
- Journal Title
  
  Jpn J.Appl.Phys 43
  
  Pages: 2602-2606
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Molecular beam epitaxy growth of ZnO2004
- Author(s)
  M.Fujita, N.Kawamoto, M.Sasajima, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B Vol.22, No.3
  
  Pages: 1484-1486
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Magnetic and electric field effect of photoluminescence of excitons bound to nitrogen atom pairs in GaAs2004
- Author(s)
  K.Onomitsu, T.Okabe, T.Makimoto, H.Saito, M.Ramsteiner, H.Zhu, A.Kawaharazuka, K.Ploog, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.43, No.6B
  
  Pages: 756-758
- NAID
  10013161178
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Modulated beam growth method for MBE grown GaN layers2004
- Author(s)
  K.T.Liu, T.Tezuka, S.Sugita, Y.Watari, Y.Horikoshi, Y.K.Su, S.J.Chang
- Journal Title
  
  J.Crystal Growth 263
  
  Pages: 400-405
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy2004
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B Vol.22, No.4
  
  Pages: 1746-1749
- Data Source
  KAKENHI-PROJECT-16031213
[Journal Article] Selective growth of C60 GaAs and the optical characteristic2004
- Author(s)
  M.Ogawa, J.Nishinaga, Y.Kida, H.Yamagata, T.Aihara, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B 22
  
  Pages: 1441-1443
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Selective growth of C_<60> layers on GaAs and their crystalline characteristics2004
- Author(s)
  J.Nishinaga, M.Ogawa, Y.Horikoshi
- Journal Title
  
  Thin solid Films vol.464/465
  
  Pages: 323-326
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy2004
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B Vol.22
  
  Pages: 1746-1749
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Magnetic and electric Field Effect of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs2004
- Author(s)
  K.Onomitsu, T.Okabe, T.Makimoto, H.Saito, M.Ramsteiner, H.Zhu, A.Kawaharazuka, K.Ploog, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 756-758
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Magnetic and electric Field Effect of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs2004
- Author(s)
  Ramsteiner, K.Ploog, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.43,No.6B
- NAID
  10013161178
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Selective growth of C_<60> GaAs and the optical characteristic2004
- Author(s)
  M.Ogawa, J.Nishinaga, Y.Kida, H.Yamagata, T.Aihara, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B 22
  
  Pages: 1441-1443
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Selective growth of C60 layers on GaAs and their crystalline characteristics2004
- Author(s)
  J.Nishinaga, M.Ogawa, Y.Horikoshi
- Journal Title
  
  Thin solid Films Vol464/465
  
  Pages: 323-326
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy2004
- Author(s)
  T.Toda, T.Hasegawa, T.Iwai, T.Uehara, Y.Horikoshi
- Journal Title
  
  Physica E Vol.23
  
  Pages: 315-319
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Molecular beam epitaxy growth of ZnO2004
- Author(s)
  M.Fujita, N.Kawamoto, M.Sasajima, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B 22
  
  Pages: 1484-1486
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy2004
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B Vol.22, No.4
  
  Pages: 1746-1749
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy2004
- Author(s)
  T.Toda, T.Hasegawa, T.Iwai, T.Uehara Y.Horikoshi
- Journal Title
  
  Physica E 23
  
  Pages: 315-319
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
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  KAKENHI-PROJECT-14350170
[Journal Article] Selective growth of C_<60> layers on GaAs and their crystalline characteristics2004
- Author(s)
  J.Nishinaga, M.Ogawa, Y.Horikoshi
- Journal Title
  
  Thin solid Films 464/465
  
  Pages: 323-326
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers2004
- Author(s)
  K.T.Liu, Y.K.Su, S.J.Chang, K.Onomitsu, Y.Horikoshi
- Journal Title
  
  Phys.Status Solidi B Vol.241 No.12
  
  Pages: 2693-2697
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- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] High quality GaN epitaxial layers grown by modulated beam growth method2004
- Author(s)
  K.T.Liu, T.Tezuka, S.Sugita, Y.Watari, Y.Horikoshi, Y.K.Su, S.J.Chang
- Journal Title
  
  Materials Chemistry and Physics 86
  
  Pages: 161-164
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
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  KAKENHI-PROJECT-14350170
[Journal Article] Selective growth of C60 GaAs and the optical characteristic2004
- Author(s)
  M.Ogawa, J.Nishinaga, Y.Kida, H.Yamagata, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B Vol.22,No.3
  
  Pages: 1441-1443
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy2004
- Author(s)
  T.Toda, T.Hasegawa, T.Iwai, T.Uehara, Y.Horikoshi
- Journal Title
  
  Physica E vol.23
  
  Pages: 315-319
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] High quality GaN epitaxial layers grown by modulated beam growth method2004
- Author(s)
  K.T.Liu, T.Tezuka, S.Sugita, Y.Watari, Y.Horikoshi, Y.K.Su, S.J.Chang
- Journal Title
  
  Materials Chemistry and Physics 86/1
  
  Pages: 161-164
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Selective growth of C60 layers on GaAs and their crystalline characteristics2004
- Author(s)
  I.Nishinaga, M.Ogawa, Y.Horikoshi
- Journal Title
  
  Thin solid Films 464/465
  
  Pages: 323-326
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Selective growth of C_<60> GaAs and the optical characteristic2004
- Author(s)
  M.Ogawa, J.Nishinaga, Y.Kida, H.Yamagata, T.Aihara, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B 22, No.3
  
  Pages: 1441-1443
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy2004
- Author(s)
  T.Tatsumi, M.Fujita, N.Kawamoto, M.Sasajima, Y.Horikoshi
- Journal Title
  
  Jpn J.Appl.Phys. Vol.43, No.5A
  
  Pages: 2602-2606
- Description
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- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] High quality GaN epitaxial layers grown by modulated beam growth method2004
- Author(s)
  K.T.Liu, T.Tezuka, S.Sugita, Y.Watari, Y.Horikoshi, Y.K.Su, S.J.Chang
- Journal Title
  
  Materials Chemistry and Physics Vol.86/1
  
  Pages: 161-164
- Description
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- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy2004
- Author(s)
  T.Tatsumi, M.Fujita, N.Kawamoto, M.Sasajima, Y.Horikoshi
- Journal Title
  
  Jpn J.Appl.Phys. 43
  
  Pages: 2602-2606
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
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  KAKENHI-PROJECT-14350170
[Journal Article] Modulated beam growth method for MBE grown GaN layers2004
- Author(s)
  K.T.Liu, T.Tezuka, S.Sugita, Y.Watari, Y.Horikoshi, Y.K.Su, S.J.Chang
- Journal Title
  
  J.Crystal Growth 263
  
  Pages: 400-405
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers2004
- Author(s)
  K.T.Liu, Y.K.Su, S.J.Chang, K.Onomitsu, Y.Horikoshi
- Journal Title
  
  Phys.Status Solidi B 241
  
  Pages: 2693-2697
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy2004
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B 22
  
  Pages: 1746-1749
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
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[Journal Article] Modulated beam growth method for MBE grown GaN layers2004
- Author(s)
  K.T.Liu, T.Tezuka, S.Sugita, Y.Watari, Y.Horikoshi, Y.K.Su, S.J.Chang
- Journal Title
  
  J.Crystal Growth Vol.263
  
  Pages: 400-405
- Description
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- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Molecular beam epitaxy growth of ZnO2004
- Author(s)
  M.Fujita, N.Kawamoto, M.Sasajima, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B 22
  
  Pages: 1484-1486
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy2004
- Author(s)
  T.Toda, T.Hasegawa, T.Iwai, T.Uehara, Y.Horikoshi
- Journal Title
  
  Physica E 23
  
  Pages: 315-319
- Data Source
  KAKENHI-PROJECT-13CE2003
[Journal Article] Compositional nonuniformity in molecular beam epitaxy grown InAsSb on GaAs(111)A substrates2003
- Author(s)
  R.Suzuki, H.Amano, T.Kuroki, J.Nishinaga, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42
  
  Pages: 6260-6264
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Comparative study of p-type dopants, Mg and Be in GaN grown by RF-MBE2003
- Author(s)
  S.Sugita, Y.Watari, G.Yoshizawa, J.Sodesawa, H.Yamamizu, K.T.Liu, Y.K.Su, Y.Horikoshi
- Journal Title
  
  Inst.Phys.Conf.Ser.Vol. 174
  
  Pages: 29-32
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Area selective epitaxy of anti-dot structure by solid source MBE using MEE deposition sequence2003
- Author(s)
  D.Okada, H.Hasegawa, T.Hasegawa, Y.Horikoshi, T.Saitoh.
- Journal Title
  
  Inst.Phys.Conf.Ser. 174
  
  Pages: 33-36
- Description
  「研究成果報告書概要(和文)」より
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  KAKENHI-PROJECT-14350170
[Journal Article] 極性制御によるBeドープp型GaNの成長2003
- Author(s)
  杉田茂宣、渡也寸雅、吉澤銀河、袖澤純、山水大史、堀越佳治
- Journal Title
  
  表面科学 24
  
  Pages: 538-542
- NAID
  10011735137
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Compositional nonuniformity in molecular beam epitaxy grown InAsSb on GaAs(111)A substrates2003
- Author(s)
  R.Suzuki, H.Amano, T.Kuroki, J.Nishinaga, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 6260-6264
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Area selective epitaxy of anti-dot structure by solid source MBE using MEE deposition sequence2003
- Author(s)
  D.Okada, H.Hasegawa, T.Hasegawa, Y.Horikoshi, T.Saitoh
- Journal Title
  
  Inst.Phys.Conf.Ser. Vol.174
  
  Pages: 33-36
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Growth of Be-doped p-type GaN under Invariant Polarity Conditions2003
- Author(s)
  S.Sugita, Y.Watari, G.Yoshizawa, J.Sodesawa, H.Yamamizu, Kuan-Ting Liu, Yan-Kuin Su, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42
  
  Pages: 7194-7197
- NAID
  10011735137
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Molecular Beam Epitaxial Growth of ZnO on Si Substrate by Using Ozone as an Oxygen Source2003
- Author(s)
  M.Fujita, N.Kawamoto, T.Tatsumi, K.Yamagishi, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42
  
  Pages: 67-70
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Growth of Be-doped p-type GaN under Invariant Polarity Conditions2003
- Author(s)
  S.Sugita, Y.Watari, G.Yoshizawa, J.Sodesawa, H.Yamamizu, Kuan-Ting Liu, Yan-Kuin Su, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 7194-7197
- NAID
  10011735137
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy2003
- Author(s)
  N.Kawamoto, M.Fujita, T.Tatsumi, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42
  
  Pages: 7209-7212
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Molecular Beam Epitaxial Growth of ZnO on Si Substrate by Using Ozoneas an Oxygen Source2003
- Author(s)
  M.Fujita, N.Kawamoto, T.Tatsumi, K.Yamagishi, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 67-70
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Comparative study of p-type dopants, Mg and Be in GaN grown by RF-MBE2003
- Author(s)
  S.Sugita, Y.Watari, G.Yoshizawa, J.Sodesawa, H.Yamamizu, K.T.Liu, Y.K.Su, Y.Horikoshi
- Journal Title
  
  Inst.Phys.Conf.Ser. Vol.174
  
  Pages: 29-32
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy2003
- Author(s)
  N.Kawamoto, M.Fujita, T.Tatsumi, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 7209-7212
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure2002
- Author(s)
  A.Kawaharazuka, T.Saku, CA.Kikuchi, Y.Horikoshi, Y.Hirayama
- Journal Title
  
  Physica E-Low-Dimensional Systems & Nanostructures 13
  
  Pages: 663-666
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Sb surface segregation effect on the phase separation of MBE grown in InAsSb2002
- Author(s)
  H.Miyoshi, R.Suzuki, H.Amano, Y.Horikoshi
- Journal Title
  
  Journal of Crystal Growth 237-239
  
  Pages: 1519-1524
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Growth of GaAs/InAs antidote structure by solid-source MBE2002
- Author(s)
  H.Hasegawa, D.Okada, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol. 41
  
  Pages: 2205-2207
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Modulation of PL recombination processes in N doped GaAs/Al_<0.33>Ga_<0.67>As SQW by electric field2002
- Author(s)
  K.Onomitsu, A.Kawaharazuka, T.Okabe, T.Makimoto, H.Saito, Y.Horikoshi
- Journal Title
  
  Inst.Phys.Conf.Ser. 170
  
  Pages: 407-411
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Modulation of PL recombination processes in N doped GaAs/Al_<0.33>Ga_<0.67>As SQW by electric field)2002
- Author(s)
  K.Onomitsu, A.Kawaharazuka, T.Okabe, T.Makimoto, H.Saito, Y.Horikoshi
- Journal Title
  
  Inst.Phys.Conf.Ser. No.170, Chapter 6
  
  Pages: 407-411
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs2002
- Author(s)
  K.Onomitsu, A.Kawaharazuka, T.Okabe, T.Makimoto, H.Saito, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.41
  
  Pages: 5503-5506
- NAID
  110006341764
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs2002
- Author(s)
  K.Onomitsu, A.Kawaharazuka, T.Okabe, T.Makimoto, H.Saito, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 41
  
  Pages: 5503-5506
- NAID
  110006341764
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure2002
- Author(s)
  A.Kawaharazuka, T.Saku, CA.Kikuchi, Y.Horikoshi, Y.Hirayama
- Journal Title
  
  Physics E-Low-Dimensional Systems & Nanostructures vol.13
  
  Pages: 663-666
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Journal Article] Growth of GaAs/InAs antidote structure by solid-source MBE2002
- Author(s)
  H.Hasegawa, D.Okada, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys. 41
  
  Pages: 2205-2207
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14350170
[Patent] 太陽電池2013
- Inventor(s)
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Holder
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Type
  特許
- Filing Date
  2013-03-18
- Data Source
  KAKENHI-PROJECT-23360163
[Patent] CIS-CGS 太陽電池2013
- Inventor(s)
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Holder
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Type
  特許
- Filing Date
  2013-03-25
- Overseas
- Data Source
  KAKENHI-PROJECT-23360163
[Patent] 太陽電池2012
- Inventor(s)
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Holder
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Type
  特許
- Filing Date
  2012-07-27
- Data Source
  KAKENHI-PROJECT-23360163
[Patent] 半導体における不鈍物ドーピング2007
- Inventor(s)
  堀越佳治, 他4名
- Industrial Property Rights Holder
  住友電気工業(株)
- Industrial Property Number
  2007-024659
- Filing Date
  2007-02-02
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Patent] 半導体における不純物ドーピング法2007
- Inventor(s)
  堀越佳治,河原塚篤,田辺達也,中西文毅,森大樹
- Industrial Property Rights Holder
  住友電気工業(株)
- Industrial Property Number
  2007-024659
- Filing Date
  2007-02-02
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] 高温時における超格子太陽電池の吸収係数2015
- Author(s)
  西永慈郎、河原塚篤、堀越佳治
- Organizer
  第3４回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Effect of excitonic absorption on the efficiency of AlGaAs/GaAs solar cells2013
- Author(s)
  . Y. Horikoshi
- Organizer
  JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] GaAs基板上にMEE成長したCuGaSe2の電気的特性(17pC1-8)2012
- Author(s)
  藤田実樹, 佐藤友博, 北田剛, 堀越佳治
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] CuInSe2/CuGaSe2超格子の吸収効率(17pC1-3)2012
- Author(s)
  河原塚篤, 藤田実樹, 堀越佳治
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] 励起子吸収を利用したAlGaAs/GaAs超格子太陽電池(31pH-11)2011
- Author(s)
  西永慈郎、河原塚篤、小野満恒二、クラウスプローク、堀越佳治
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] 選択成長したInAs微細構造とGaAs(001)、(111)A基板の界面特性2011
- Author(s)
  マレーネツァンダー、西永慈郎、堀越佳治
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Excitonic Effect on the Semiconductor Solar-Cells with AlGaAs/GaAs Superlattices2011
- Author(s)
  A.Kawaharazuka, J.Nishinaga, Y.Horikoshil
- Organizer
  21st International Photovoltaic Science and Engineering Conference (PVSEC-21)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2011-12-02
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] AlGaAs/GaAs超格子太陽電池における励起子吸収2011
- Author(s)
  西永慈郎、河原塚篤、小野満恒二、クラウスプローク、堀越佳治
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Electrical properties of C60 and Si codoped GaAs layers2011
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Organizer
  28th North American Molecular Beam Epitaxy
- Place of Presentation
  San Diego, USA
- Year and Date
  2011-08-14
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] C60, Si codoped GaAsの光電流スペクトル2011
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2011
- Author(s)
  J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
- Organizer
  38th International Symposium on Compound Semiconductors
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Successful growth of Cu2Se-free CuGaSe2 by Migration-Enhanced Epitaxy2011
- Author(s)
  M.Fujita, T.Sato, T.Kitada, Y.Horikoshi
- Organizer
  28th North American Molecular Beam Epitaxy
- Place of Presentation
  San Diego, USA
- Year and Date
  2011-08-14
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] AlGaAs/GaAs超格子太陽電池の吸収効率の評価(31pH-12)2011
- Author(s)
  河原塚篤、西永慈郎、堀越佳治
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Structural properties of InAs-basad nanostructures on GaAs(001) and GaAs(111) A grown by area selective epitaxy2011
- Author(s)
  M.Zander, J.Nishinaga, K.Iga, Y.Horikoshi
- Organizer
  38th International Symposium on Compound Semiconductors
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] MEE法によるGaAs基板上CuGaSe2薄膜の界面特性(30aH-7)2011
- Author(s)
  佐藤友博、藤田実樹、北田剛、堀越佳治
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] C60 -doped GaAs, AlGaAsのトラップ準位2010
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  応用物理学会結晶工学分科会主催年末講演会
- Place of Presentation
  学習院大学
- Year and Date
  2010-12-27
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] C60 doped GaAs, AlGaAsのトラップ準位2010
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] GaAs(111)A基板上InAs薄膜成長のヒロック形成抑制2010
- Author(s)
  伊賀一貴、西永慈郎、マレーネツァンダー、堀越佳治
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] 太陽電池における励起子吸収について2010
- Author(s)
  西永慈郎、菱田清、小野満恒二、堀越佳治
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Effect of excitons on the absorption in solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy2010
- Author(s)
  A.Kawaharazuka, K.Onomitsu, J.Nsihinaga, Y.Horikoshi
- Organizer
  16th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-08-22
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] C60・Ge複合体薄膜を用いた有機薄膜太陽電池2010
- Author(s)
  林剛史、西永慈郎、菱田清、堀越佳治
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Electrical properties of C60 delta-doped GaAs layers grown by MBE2010
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  修善寺、静岡県
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Area-selective epitaxy of InAs by migration enhanced epitaxy (MEE)2010
- Author(s)
  M.Zander, J.Nishinaga, Y.Horikoshi
- Organizer
  16th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-08-22
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] AiGaAs/GaAs超格子構造太陽電池における励起子吸収の効果2010
- Author(s)
  河原塚篤、小野満恒二、西永慈郎、堀越佳治
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Migration-enhanced epitaxyによるGaAs(001)上のInAs選択成長2010
- Author(s)
  マレーネツァンダー、西永慈郎、堀越佳治
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] C60 delta-doped Be-GaAsの電気的特性2010
- Author(s)
  西永慈郎、菱田清、堀越佳治
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] AlGaAs中へのフラーレンC60添加による電子トラップセンターの解析2009
- Author(s)
  西永慈郎、林剛史、菱田清、堀越佳治
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Electrical properties of C60-delta-doped GaAs layers grown by MBE2009
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Organizer
  36th International Symposiun on Compound Semiconductor
- Place of Presentation
  Santa Barbara, USA
- Year and Date
  2009-08-30
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Structural properties of C <60>-multivalent metal composite layers grown by MBE2009
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Organizer
  26th North American Molecular Beam Epitaxy
- Place of Presentation
  Princeton, USA
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] In-Plane構造デバイスの製作と電気的特性2009
- Author(s)
  小松崎優治, 東千博, 京極智輝, 小野満恒二, 河原塚篤, 堀越佳治
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] 透過電子顕微鏡による多価金属・フラーレン複合体の構造解析2009
- Author(s)
  西永慈郎, 杉本敬哉, 堀越佳治
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] Structural propert ies of C60-multivalent matal composite layers grown by MBE2009
- Author(s)
  J.Nishinaga, T.Hayashi, K.Nishida, Y.Horikoshi
- Organizer
  26th North American Molecular Beam Epitaxy
- Place of Presentation
  Princeton, USA
- Year and Date
  2009-08-11
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] 多価金属・フラーレン複合体を用いた有機薄膜太陽電池2009
- Author(s)
  林剛史、西永慈郎、菱田清、堀越佳治
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Electrical properties of C <60>δ-doped GaAs layers grown by MBE2009
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Organizer
  36th International Symposium on Compound Semiconductor
- Place of Presentation
  Santa Barbara, USA
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] GaAs結晶中へのC60ドーピングによる電子トラッピング効果2009
- Author(s)
  西永慈郎, 林剛史, 菱田清, 堀越佳治
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] GaAs基板上フラーレンC60の核形成2009
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  計算機センター特別研究プロジェクト「結晶成長の数理」第4回研究会
- Place of Presentation
  学習院大学
- Year and Date
  2009-12-26
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] 学生実験「太陽電池の光照射強度依存性」2009
- Author(s)
  竹内登志男, 佐藤道夫, 西永慈郎, 河原塚篤, 堀越佳治
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] Ga203-SiO2界面電子状態の高分解XPSによる評価2009
- Author(s)
  竹内登志男, 市村陽介, 杉本大輔, 堀越佳治
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] High resolution x-ray photoeleotron speotroscopy of beta-gallium oxide-based thin films deposited by ultrahigh vacuum radio frequency magnetron sputtering2008
- Author(s)
  T. Takeuchi, N. Takeuchi, Y. lchimura, Y. Horikoshi
- Organizer
  7th lnternational Conference on Coating on Glass and Plastics
- Place of Presentation
  Eindhoven, Netherlands
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] Nanotechnology; Yesterday, Today, and Tomorrow2008
- Author(s)
  Y.Horikoshi
- Organizer
  The 1st China Jiangsu Conference for International Technology Transfer & Commercialization
- Place of Presentation
  Nanjing, China
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] NH3-MBE法によるGaN成長におけるNH3加熱の効果2008
- Author(s)
  吉崎忠、堀越佳治
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] 化合物半導体Self-Switching Diodeの製作プロセスと特性2008
- Author(s)
  小松崎優治, 東干博, 京極智輝, 小野満恒二, 山口浩司, 堀越佳治
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] RHEED強度振動によるGaAs(001)基板上C60結晶成長の解析2008
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Compound semiconductor nanostructures and their future applications2008
- Author(s)
  Y. Horikoshi
- Organizer
  International Workshop on Next Generation Electronics 2008 (IWNE 2008)
- Place of Presentation
  Tainan, Taiwan
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] Crystalline and electrical characteristics of C60-doped GaAs films2008
- Author(s)
  J. Nishinaga, T. Takada, T. Hayashi, Y. Horikoshi
- Organizer
  15th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] RHEED intensity oscillation of C60 growth on GaAs substrates2008
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Organizer
  15th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] GaAs高指数面基板上C60結晶薄膜のX線回折測定2008
- Author(s)
  西永慈郎, 林剛史, 河原塚篤, 堀越佳治
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] C60-doped GaAs薄膜の成長と結晶学的特性2008
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Effect of the MgO substrate on the growth of GaN2008
- Author(s)
  R. Suzuki, A. Kawaharazuka, Y. Horikoshi
- Organizer
  15th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] Nanoteohnology ; Yesterday, Today, and Tomorrow2008
- Author(s)
  Y. Horikoshi
- Organizer
  The 1st China Jiangsu Conference for International Technology Transfer & Commercialization
- Place of Presentation
  Nanjing, China
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] RFマグネトロンスパッタリング法によるZnO結晶薄膜の作製とその結晶性評価2008
- Author(s)
  市村洋介、堀越佳治
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] RF-MBE法で成長したGaNの結晶性のドーピング効果2008
- Author(s)
  吉田直人, 鈴木遼太郎, 河原塚篤, 堀越佳冶
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] Compound semiconductor nanostruotures and their future applications2008
- Author(s)
  Y. Horikoshi
- Organizer
  International Workshop on Next Generation Electronics 2008 (IWNE 2008)
- Place of Presentation
  Tainan, Taiwan
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] Growth of GaN with warm ammonia2008
- Author(s)
  A. Kawaharazuka, T. Yoshizaki, K. H. PIoog, Y. Horikoshi
- Organizer
  15th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] MEE法によるGaAs選択成長におけるAs分子種の効果2007
- Author(s)
  河原塚篤, 堀越佳治
- Organizer
  秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学、札幌
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MBE growth of ZnO by using RF plasma-activated oxygen and ozone as oxygen sources2007
- Author(s)
  Y. Horikoshi
- Organizer
  International Workshop on Widegap Semiconductors
- Place of Presentation
  National Cheng Kung University, Taiwan
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] 化合物半導体Self-Switching Diodeにおける製作プロセスの検討2007
- Author(s)
  小松崎優治, 堀越佳治
- Organizer
  秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学、札幌
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] 化合物半導体Self-Switching Diodeにおける製作プロセスの検討2007
- Author(s)
  小松崎優治, 堀越佳治
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Growth of InAs on GaAs(111)A by MBE and their electric properties2007
- Author(s)
  R. Harada, J. Nishinaga, T. Takada, A. Kawaharazuka, Y. Horikoshi
- Organizer
  The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Hokkaido Institute of University
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] RF-MBE法によるBe,Mg空間分離ドープp型GaNの成長2007
- Author(s)
  長井健一郎, 堀越佳治
- Organizer
  秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学、札幌
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MBE法によるGaAs(111)A基板上へのInAs薄膜成長と電気的特牲2007
- Author(s)
  原田亮平, 堀越佳治
- Organizer
  秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学、札幌
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MBE growth of ZnO by using RF plasma-activated oxygen and ozone as oxygen sources2007
- Author(s)
  Y. Horikoshi
- Organizer
  International Workshop on Widegap Semiconductors
- Place of Presentation
  Taiwan
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] RF-MBE growth of p-type GaN by Be, Mg specially doping2007
- Author(s)
  K. Nagai, A. Kawaharazuka, Y. Horikoshi
- Organizer
  The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Hokkaido Institute of University
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] RFマグネトロンスパッタリング法によるCuGa02結晶薄膜の作製とその物性評価2007
- Author(s)
  竹内史和, 堀越佳治
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Area selective epitaxy of GaAs by migration-enhanced epitaxy with As_2 and As_4 arsenic sources2007
- Author(s)
  Kawaharazuka, I. Yoshiba, Y. Horikoshi
- Organizer
  11th International Conference on the Formation of Semiconductor Interfaces (11th ICFSI)
- Place of Presentation
  Manaus, Brazil
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MEE法によるGaAs選択成長におけるAs分子種の効果2007
- Author(s)
  河原塚篤, 堀越佳治
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MBE法によるGaAs(111)A基板上へのInAs薄膜成長と電気的特性2007
- Author(s)
  原田亮平, 堀越佳治
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] RF-MBE法によるBe,Mg空間分離ドープp型GaNの成長"2007
- Author(s)
  長井健一郎, 堀越佳治
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] RHEED intensity oscillations of C60 growth2007
- Author(s)
  J. Nishinaga, Y. Horikoshi
- Organizer
  11th International Conference on the Formation of Semiconductor Interfaces (11th ICFSI).
- Place of Presentation
  Manaus, Brazil
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Effect of arsenic species to area selective epitaxy of GaAs by MEE2007
- Author(s)
  A. Kawaharazuka, I. Yoshiba, Y. Horikoshi
- Organizer
  The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Hokkaido Institute of University
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MBE growth of ZnO by using RF plasma-activated oxygen and ozonle as oxygen sources2007
- Author(s)
  Y. Horikoshi
- Organizer
  International Workshop on Widegap Semiconductors
- Place of Presentation
  Taiwan
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Area selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources2007
- Author(s)
  A. Kawaharazuka, Y. Horikoshi
- Organizer
  11th International Conference on the Formation of Semiconductor Interfaces (11th ICFSI).
- Place of Presentation
  Manaus,Brazil
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] オゾンソースMBE法によるa面サファイア基板上のZnO結晶成長2007
- Author(s)
  大西潤哉, 堀越佳治
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Area selective epitaxy of GaAs by migration-enhanced epitaxy with As_2 and As_4 arsenic sources2007
- Author(s)
  A.Kawaharazuka, Y.Horikoshi
- Organizer
  11th International Conference on the Formation of Semiconductor Interfaces(11th ICFSI)
- Place of Presentation
  Manaus,Brazil
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Investigation of fabrication processes of compound semiconductor Self-Switching Diode2007
- Author(s)
  Y Komatsuzaki, I. Yoshiba, A. Kawaharazuka, Y. Horikoshi
- Organizer
  The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Hokkaido Institute of University
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] 高濃度SiドープGaAs薄膜中へのBe共ドーピング効果2006
- Author(s)
  チャバナパニートサポーン, 堀越佳治
- Organizer
  秋季第67回応用物理学会学術講演会
- Place of Presentation
  立命館大学、滋賀
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Characteristics of Multivalent impurity deped C_60 films grown byu MBE2006
- Author(s)
  J. Nishinaga, T. Aihara, A. Kawaharazuka, Y. Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Characteristics of multivalent impurity doped C_<60> films grown by MBE2006
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Interplay of magnetization with the thickness between Mn δ layers induced GaAs2006
- Author(s)
  K.Yanagisawa, Y.Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MBE growth of GaN on MgO substrate2006
- Author(s)
  R. Suzuki, A. Kawaharazuka, Y. Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Electrical Properties of Ge-Doped InSb and InAs on GaAs(111) A Substrate2006
- Author(s)
  J. Nishinaga, R. Harada, T. Takada, A. Kawaharazuka, Y. Horikoshi
- Organizer
  International Conference on Solid State Devices and Materials(SSDM 2006)
- Place of Presentation
  Yokohama, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MBE growth of GaN on MgO substrate2006
- Author(s)
  R.Suzuki, Y.Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Be and Mg co-doping in GaN2006
- Author(s)
  A. Kawaharazuka, T. Tanimoto, K. Nagai, Y. Tanaka, Y. Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] The strain effects in spin-related transport properties of ferromagnetic GaMnAs2006
- Author(s)
  K. Onomitsu, H. Yamaguchi, Y. Hirayama, K. Yanagisawa, S. Takeuchi, H. Yoshitake, Y. Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Ge 高濃度ドープGaAs の低温MEEによる成長2006
- Author(s)
  チャバナパニートサポーン, 堀越佳治
- Organizer
  春季第53回応用物理学関係連合講演会
- Place of Presentation
  武蔵工業大学、東京
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] GaMnAsの伝導特性における歪効果2006
- Author(s)
  小野満恒二, 堀越佳治
- Organizer
  秋季第67回応用物理学会学術講演会
- Place of Presentation
  立命館大学、滋賀
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] The study on bonding of metal-doping C_60 films2006
- Author(s)
  T. Aihara, J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Organizer
  The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Musashi Institute of Technology
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Characterization of Heavily Sn-Doped GaAs Grown by Migration-Enhanced Epitaxy at Low Temperatures2006
- Author(s)
  T. Chavanaprance, Y. Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Interplay of magnetization with the thickness between Mn δ layers induced GaAs2006
- Author(s)
  K. Yanagisawa, S. Takeuchi, H. Yositake, K. Onomitsu, Y. Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] GaAs中の窒素原子対に束縛された励起子の動的観察2006
- Author(s)
  小野満恒二, 堀越佳治
- Organizer
  春季第53回応用物理学関係連合講演会
- Place of Presentation
  武蔵工業大学、東京
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Electrical Properties of Ge-Doped InSb and InAs on GaAs(111)A Substrate2006
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Organizer
  International Conference on Solid State Devices and Materials(SSDM 2006)
- Place of Presentation
  Yokohama
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Area Selective Epitaxy of GaAs with AlGaAs Native Oxide Mask by Molecular-Beam Enitaxy2006
- Author(s)
  I.Yoshiba, Y.Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Growth of heavily Ge-doped GAaS by MEE at low temperature2006
- Author(s)
  T. Chavanapranee, Y. Horikoshi
- Organizer
  The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Musashi Institute of Technology
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Dynamic characteristics of excitons bound to N-isoelectric traps in GaAs2006
- Author(s)
  K. Onomitsu, T. Makimoto, H. Saito, K. Ploog Y. Horikoshi
- Organizer
  The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Musashi Institute of Technology
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Be-Codoping Effect on Photoluminescence Characteristics of Si-doped GaAs2006
- Author(s)
  T. Chavanaprance, Y. Horikoshi
- Organizer
  24th North American Conferen ce on Molecular Beam Epitaxy(NAMBE2006)
- Place of Presentation
  Durham, NC, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] 金属元素ドーピングC<60>薄膜の結合について2006
- Author(s)
  藍原智之、堀越佳治
- Organizer
  春季第53回応用物理学関係連合講演会
- Place of Presentation
  武蔵工業大学、東京
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Be and Mgco-doping in GaN2006
- Author(s)
  A.Kawaharazuka, Y.Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] The strain effects in spin-related transport properties of ferromagnetic GaMnAs2006
- Author(s)
  K.Onomitsu, Y.Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Characterization of Heavily Sn-Doped GaAs Grown by Migration-Enhanced Epitaxy at Low Temperatures2006
- Author(s)
  T.Chavanapranee, Y.Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Area Selective Epitaxy of GaAs with AlGaAs Native Oxide Mask by Molecular-Beam Epitaxy2006
- Author(s)
  I. Yoshiba, T. Iwai, T. Uehara, Y. Horikoshi
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Strain effect on electrical properties of GaMnAs thin layers2006
- Author(s)
  K. Onomitsu, H. Yamaguchi, Y. Horikoshi
- Organizer
  The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Ritsumeikan University
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Preparation and analysis of Cu doped amorphous GaO films prepared by magnetron sputtering methods2005
- Author(s)
  N. Okuda, H. Ishikawa, N. Takcuchi, H. Nakayama, T. Takeuchi, Y. Horikoshi
- Organizer
  The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  The University of Tokushima
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Flux modulation RF-MBE growth of Be-doped P-type GaN on glass substrates2005
- Author(s)
  T. Ito, Y. Tanaka, K. Koretsune, T. Tanimoto, A. Kawaharazuka, Y. Horikoshi
- Organizer
  The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  The University of Tokushima
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] β-Ga_2O_3結晶性薄膜のマグネトロンスパッタ法による作製2005
- Author(s)
  アリ・アジャル・トルクメン、石川裕記、奥田成生、竹内登志男、堀越佳治
- Organizer
  第52回応用物理学関係連合講演会
- Place of Presentation
  埼玉大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MEE法によるGaAs六角ピラー構造の選択成長2005
- Author(s)
  岩井隆之、遠田健、上原孝太、葭葉一平、堀越佳治
- Organizer
  第52回応用物理学関係連合講演会
- Place of Presentation
  埼玉大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Radical-assisted RF-MBE growth of Be-doped p-GaN by polarity control2005
- Author(s)
  Y.Horikoshi
- Organizer
  32nd conference on the Physics and Chemistry of Semiconductor Interfaces
- Place of Presentation
  Bozeman Montana, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MEE法による三角型共振器構造の選択成長2005
- Author(s)
  上原孝太、遠田健、長谷川剛史、岩井隆之、葭葉一平、堀越佳治
- Organizer
  第52回応用物理学関係連合講演会
- Place of Presentation
  埼玉大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Selective area growth of triangle cavity structure by MEE2005
- Author(s)
  K.Uehara, Y.Horikoshi
- Organizer
  The 52th Spring Meeting, 2005, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] 低温MEE成長したGaAsにおけるMnとBeの空間分離変調ドーピング2005
- Author(s)
  小野満恒二、堀越佳治
- Organizer
  秋季第66回応用物理学会学術講演会
- Place of Presentation
  徳島大学、徳島
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Nanoscale selective area epitaxy of C60 crystals on GaAs by MBE2005
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Organizer
  The 52th Spring Meeting, 2005, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Growth of Be-doped GaN on GaN template substrates bu RF-MBE2005
- Author(s)
  Y. Tanaka, T. Ito T. Tanimoto, K. Koretsune, A. Kawaharazuka, Y. Horikoshi
- Organizer
  The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  The University of Tokushima
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Optical integrated devices by disk laser coupling using area selective epitaxy2005
- Author(s)
  Y.Horikoshi
- Organizer
  The 52th Spring Meeting, 2005, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Polar diagram of the GaAs growth rate in Migration-Enhanced-Epitaxy2005
- Author(s)
  I. Yohiba, T. Toda, T. Iwa, T. Uehara, K. Onomitsu, Y. Horikoshi
- Organizer
  The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  The University of Tokushima
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] UHV・RFスパッタリング法によるアモルファスGaO薄膜のCuドープ効果2005
- Author(s)
  奥田成生、堀越佳治
- Organizer
  秋季第66回応用物理学会学術講演会
- Place of Presentation
  徳島大学、徳島
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Radical-assisted RF-MBE growth of Be-doped p-GaN by polarity control2005
- Author(s)
  Y.Horikoshi
- Organizer
  32^<nd> conference on the Physics and Chemistry of Semiconductor Interfaces
- Place of Presentation
  Bozeman Montana, USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MBE法によるC_<60>/GaAs構造のナノスケール選択成長2005
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第29回フラーレン・ナノチューブ総合シンポジウム
- Place of Presentation
  京都大学、京都
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Al-doped C_60薄膜の電気的特性2005
- Author(s)
  松谷文雄、堀越佳治
- Organizer
  秋季第66回応用物理学会学術講演会
- Place of Presentation
  徳島大学、徳島
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Optical properties of amorphous gallium oxide thin films by RF magnetron sputtering2005
- Author(s)
  N.Okuda, Y.Horikoshi
- Organizer
  The 52th Spring Meeting, 2005, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MEE法のおける横方向成長の結晶方位依存性2005
- Author(s)
  葭葉一平、堀越佳治
- Organizer
  秋季第66回応用物理学会学術講演会
- Place of Presentation
  徳島大学、徳島
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] フラックス変調RF-MBE法を用いたガラス基板上へのBeドープP型GaNの成長2005
- Author(s)
  伊藤隆行、堀越佳治
- Organizer
  秋季第66回応用物理学会学術講演会
- Place of Presentation
  徳島大学、徳島
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MgOバッファー層を用いたSi(111)基板上のZnMgO/ZnO/ZnMgO量子井戸のMBE成長2005
- Author(s)
  藤田実樹、鈴木遼太郎、小坂和裕、笹島正則、ユパワディー・ディーシラピパッド、堀越佳治
- Organizer
  第52回応用物理学関係連合講演会
- Place of Presentation
  埼玉大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Nano-scale selective area epitaxy of C_60 crystals on GaAs by MBE2005
- Author(s)
  J. Nishinaga, T. Aihara, T. Toda, F. Matsutani, Y. Horikoshi
- Organizer
  23rd North American Conference on Molecular Beam Epitaxy(NAMBE2005)
- Place of Presentation
  Santa Barbara, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] Crystal growth of beta-Ga2O3(001)thin films on MgO(100)2005
- Author(s)
  A.Trukmen, Y.Horikoshi
- Organizer
  The 52th Spring Meeting, 2005, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Mn and Be co-doped GaAs for high hole concentration by LT-MEE2005
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Organizer
  第52回応用物理学関係連合講演会
- Place of Presentation
  埼玉大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] 非晶質GaO薄膜のマグネトロンスパッタ法による作製と光学特性の成果2005
- Author(s)
  奥田成生、アジャール・アリ・トルクメン、石川裕記、松本吉光、竹内登志男、堀越佳治
- Organizer
  第52回応用物理学関係連合講演会
- Place of Presentation
  埼玉大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Electrical characteristics of Al-doped C_60 layers2005
- Author(s)
  F. Matsutani, J. Nishinaga, T. Aihara, T. Takada, R. Harada, T. Deguchi, Y. Horikoshi
- Organizer
  The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
- Place of Presentation
  The University of Tokushima
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MBE growth of ZnMgO/ZnO/ZnMgO quantum well structure by using MgO buffer layer on Si(111)substrates2005
- Author(s)
  M.Fujita, Y.Horikoshi
- Organizer
  The 52th Spring Meeting, 2005, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] 微小ディスクレーザー結合による光集積デバイス2005
- Author(s)
  堀越佳治、小野満恒二、遠田健、上原孝太、岩井隆之
- Organizer
  第52回応用物理学関係連合講演会
- Place of Presentation
  埼玉大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Selective area growth of GaAs hexagonal pillar structures by MEE2005
- Author(s)
  T.Iwai, Y.Horikoshi
- Organizer
  The 52th Spring Meeting, 2005, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] RF-MBE法を用いたGaNテンプレート基板上へのBeドープGaNの成長2005
- Author(s)
  田中裕介、堀越佳治
- Organizer
  秋季第66回応用物理学会学術講演会
- Place of Presentation
  徳島大学、徳島
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201026
[Presentation] MgOバッファー層を用いたsi(111)基板上のZnMgo結晶成長2004
- Author(s)
  藤田実樹、笹島正則、ユパーワディー・ディーシラピパッド、堀越佳治
- Organizer
  第65回応用物理学会学術講演会
- Place of Presentation
  東北学院大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Optical characteristics of Al-doped C60 films2004
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Organizer
  The 51th Spring Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Crystal growth of ZnMgO film grown by using MgO buffer on Si(111)substrates2004
- Author(s)
  M.Fujita, Y.Horikoshi
- Organizer
  The 65th Autumn Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] ワイドギャップ酸化物半導体・非結晶性Ga-O薄膜の作製と基礎特性2004
- Author(s)
  アカル・アリ・トゥルクメン、竹内登志男、上原孝太、藤田実樹、堀越佳治
- Organizer
  第51回応用物理学関係連合講演会
- Place of Presentation
  東京工科大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] The modulation of photoluminescence process of excitons bound to nitrogen atom pairs in GaAs2004
- Author(s)
  K.Onomitsu, Y.Horikoshi
- Organizer
  The 65th Autumn Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Preparation of wide energy band gap oxide semiconductor non-crystalline Ga-O film and its fundamental properties2004
- Author(s)
  T.Takeuchi, A.Turkmen, T.Uehara, M.Fujita, Y.Horikoshi
- Organizer
  International Conference on Coatings on Glass
- Place of Presentation
  Saarbruecken, Germany
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MBE法によるC_<60>/GaAs構造のナノスケール選択成長2004
- Author(s)
  西永慈郎、藍原智之、遠田健、松谷文雄、葭葉一平、堀越佳治男、堀越佳治
- Organizer
  第65回応用物理学会学術講演会
- Place of Presentation
  東北学院大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MEE法を利用したMnとBeの空間的変調ドーピングによるGaMnAsへのホール注入2004
- Author(s)
  小野満恒二、福井英夫、前田孝、平山祥郎、堀越佳治
- Organizer
  第65回応用物理学会学術講演会
- Place of Presentation
  東北学院大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] 窒素ドープGaAsの窒素原子対からの発光の磁場及び電界特性2004
- Author(s)
  牧本俊樹、斉藤久夫、Manfred Ramsteiner, 朱海軍、Klaus Ploog、小野満恒二、岡部剛士、河原塚篤、堀越佳治
- Organizer
  第51回応用物理学関係連合講演会
- Place of Presentation
  東京工科大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] ZnMgO growth using MgO buffer layer on Si(111)substrates2004
- Author(s)
  M.Fujita, M.Sasajima, Y.Deesirapipat, Y.Horikoshi
- Organizer
  13th International conference on Molecular Beam Epitaxy
- Place of Presentation
  Edinburgh, Scotland
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Substrate temperature effect on the gallium oxide films by magnetron sputtering2004
- Author(s)
  A.Trukmen, Y.Horikoshi
- Organizer
  The 65th Autumn Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Mechanical and optical characteristics of Al-doped C60 films2004
- Author(s)
  J.Nishinaga, T.Aihara, H.Yamagata, Y.Horikoshi
- Organizer
  13th International conference on MBE
- Place of Presentation
  Edinburgh, Scotland
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Improved crystal quality of ZnO films growth by MgO buffer layer on Si(111)substrate2004
- Author(s)
  M.Fujita, Y.Horikoshi
- Organizer
  The 64th Autumn Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Improvement of optical quality in crack-free ZnO layer on glass substrates by MgO-buffer layer2004
- Author(s)
  Y.Deesirapipat, Y.Horikoshi
- Organizer
  The 65th Autumn Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Photoluminescence characteristics of GaAs quantum wells embedded in AlAs/GaAs-SPS barriers under two wavelength excitation2004
- Author(s)
  T.Chavanapranee, Y.Horikoshi
- Organizer
  The 51th Spring Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Crack-free ZnO layer growth on glass substrates by MgO-buffer layer2004
- Author(s)
  Y.Deesirapipat, M.Fujita, M.Sasajima, C.Antarasena, Y.Horikoshi
- Organizer
  The 31st International Symposium on Compound Semiconductors
- Place of Presentation
  Seoul, Korea
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Semiconductor nanostructure2004
- Author(s)
  Y.Horikoshi
- Organizer
  1st Nanospain Workshop
- Place of Presentation
  San Sebastian, Spain
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Growth of Mg-doped GaN on glass substrates by RF-MBE2004
- Author(s)
  H.Yamamizu, Y.Horikoshi
- Organizer
  The 51th Spring Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Photoluminescence spectra of ZnO layers by RF-MBE2004
- Author(s)
  M.Fujita, Y.Horikoshi
- Organizer
  The 51th Spring Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] GaAs中のN原子対に束縛された励起子の発光プロセス変調2004
- Author(s)
  小野満恒二、岡部剛士、牧本俊樹、斉藤久夫、Ramsteiner Manfred, Hai-jun Zhu, 河原塚篤、Ploog Klaus、堀越佳治
- Organizer
  第65回応用物理学会学術講演会
- Place of Presentation
  東北学院大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] RF-MBE法により成長したZnO結晶のPL特性2004
- Author(s)
  藤田実樹、辰巳知彦、笹島正則、堀越佳治
- Organizer
  第51回応用物理学関係連合講演会
- Place of Presentation
  東京工科大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Amorphous gallium oxide film growth by magnetron sputtering2004
- Author(s)
  N.Okuda, Y.Horikoshi
- Organizer
  The 65th Autumn Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] RF-MBE法によるガラス基板上へのMgドープGaNの成長2004
- Author(s)
  山水大史、渡也寸雅、袖澤純、伊藤隆行、田中裕介、越智敦司、堀越佳治
- Organizer
  第51回応用物理学関係連合講演会
- Place of Presentation
  東京工科大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Preparation of amorphous wide-bandgap gallium oxide films2004
- Author(s)
  A.Trukmen, Y.Horikoshi
- Organizer
  The 51th Spring Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Electrical properties of luminescence from nitrogen atom pairs in N-doped GaAs2004
- Author(s)
  T.Makimoto, Y.Horikoshi
- Organizer
  The 51th Spring Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2004
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Organizer
  13th International conference on Molecular Beam Epitaxy
- Place of Presentation
  Edinburgh, Scotland
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Al-doped C_<60>薄膜の光学的特性2004
- Author(s)
  西永慈郎、黒木敏宏、藍原智之、山形浩史、堀越佳治
- Organizer
  第51回応用物理学関係連合講演会
- Place of Presentation
  東京工科大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Donor-Isoelectronic trap pair luminescence from Mg and P co-implanted GaN grown by MOCVD2004
- Author(s)
  K.T.Liu, Y.K.Su, S.J.Chang, K.Onomitsu, Y.Horikoshi
- Organizer
  The 5th International Symposium on Blue Laser and Light Emitting Diodes
- Place of Presentation
  Gyeongju, Korea
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] ZnMgO growth using MgO buffer layer on Si(111)substrates2004
- Author(s)
  M.Fujita, M.Sasajima, Y.Deesirapipat, Y.Horikoshi
- Organizer
  13th International conference on MBE
- Place of Presentation
  Edinburgh, Scotland
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] AlAs/GaAs SPS短周期超格子バリヤをもつGaAs量子井戸の二波長励起フォトルミネッセンス2004
- Author(s)
  チャバナパニー・トサポーン、小関秀仁、堀越佳治
- Organizer
  第51回応用物理学関係連合講演会
- Place of Presentation
  東京工科大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Mechanical and optical characteristics of Al-doped C_<60> films2004
- Author(s)
  J.Nishinaga, T.Aihara, H.Yamagata, Y.Horikoshi
- Organizer
  13th International conference on Molecular Beam Epitaxy
- Place of Presentation
  Edinburgh, Scotland
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Metal doping effect into C60 thin films grown by MBE2004
- Author(s)
  T.Aihara, Y.Horikoshi
- Organizer
  The 65th Autumn Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MBE成長C_<60>薄膜特性の金属元素ドーピング効果2004
- Author(s)
  藍原智之、西永慈郎、山形浩史、堀越佳治
- Organizer
  第65回応用物理学会学術講演会
- Place of Presentation
  東北学院大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2004
- Author(s)
  K.Onomitsu, Y.Horikoshi
- Organizer
  The 65th Autumn Meeting, 2004, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MgOバッファー層を用いたガラス基板上のZnO結晶成長2004
- Author(s)
  ディーシラピパッド・ユパーワディー、藤田実樹、笹島正則、堀越佳治
- Organizer
  第65回応用物理学会学術講演会
- Place of Presentation
  東北学院大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2004
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Organizer
  13th International conference on MBE
- Place of Presentation
  Edinburgh, Scotland
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Crack-free ZnO layer growth on glass substrates by MgO-buffer layer2004
- Author(s)
  Y.Deesirapipat, M.Fujita, M.Sasajima, C.Antarasena, Y.Horikoshi
- Organizer
  The 31st International Symposium on Compound Semiconductors
- Place of Presentation
  Seoul. Korea
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] 非晶質GaO薄膜のマグネトロンスパッタ法による作製と基本特性の評価2004
- Author(s)
  奥田成生、アカル・アリ・トゥルクメン, 石川裕記、松本吉光、竹内登志男、堀越佳治
- Organizer
  第65回応用物理学会学術講演会
- Place of Presentation
  東北学院大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MEE法によるナノスケールチャネル構造の選択成長2003
- Author(s)
  遠田健、長谷川剛史、岩井隆之、上原孝太、堀越佳治
- Organizer
  第64回応用物理学会学術講演会
- Place of Presentation
  福岡大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] イオン注入法によるGaAsドット網の形成2003
- Author(s)
  西永慈郎、小野満恒二、品田賢宏、大泊巌、堀越佳治
- Organizer
  第50回応用物理学関係連合講演会
- Place of Presentation
  神奈川大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MBE growth of ZnO using initial Zn layer and MgO buffer layer on Si(111)substrates2003
- Author(s)
  M.Fujita, N.Kawamoto, M.Sasaiima., Y.Horikoshi
- Organizer
  The 2003 North American Conference on Molecular Beam Epitaxy
- Place of Presentation
  Keystone, USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] 光バイアスによって活性化するAlGaAs/GaAs単一量子井戸中の再結合中心2003
- Author(s)
  チャバナパニー・トサポーン、小関秀仁、堀越佳治
- Organizer
  第64回応用物理学会学術講演会
- Place of Presentation
  福岡大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] RF-MBE法によるZnO薄膜への水素ドーピング2003
- Author(s)
  笹島正則、藤田実樹、川本典明、堀越佳治
- Organizer
  第64回応用物理学会学術講演会
- Place of Presentation
  福岡大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] AlGaAs/GaAs複合超格子における伝導特性2003
- Author(s)
  小関秀仁、チャバナパニー・トサポーン、堀越佳治
- Organizer
  The 2003 North American Conference on Molecular Beam Epitaxy
- Place of Presentation
  Keystone, USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Selective growth of C60 layers on GaAs and their crystalline characteristics2003
- Author(s)
  J.Nishinaga, M.Ogawa, Y.Horikoshi
- Organizer
  The 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  Nara
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] 低温MEE成長したGaAsにおけるアクセプター不純物のドーピング特性2003
- Author(s)
  福井英夫、前田孝、小野満恒二、堀越佳治
- Organizer
  第50回応用物理学関係連合講演会
- Place of Presentation
  神奈川大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Be-doped nonpolar GaN growth by RF-MBE2003
- Author(s)
  J.Sodesawa, Y.Horikoshi
- Organizer
  The 64th Autumn Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Optical and electrical characteristics of C60/GaAs2003
- Author(s)
  M.Ogawa, J.Nishinaga, Y.Kida, H.Yamagata, T.Aihara, Y.Horikoshi
- Organizer
  The 2003 North American Conference on Molecular Beam Epitaxy
- Place of Presentation
  Keystone, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy2003
- Author(s)
  T.Toda, T.Hasegawa, T.Iwai, T.Uehara, Y.Horikoshi
- Organizer
  Conference : Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces Max-Planck-Institute
- Place of Presentation
  Stuttgart, Germany
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Niイオン注入GaAsの電気的性質2003
- Author(s)
  小野満恒二、福井英夫、品田賢宏、大泊巌、平山祥郎、堀越佳治
- Organizer
  第64回応用物理学会学術講演会
- Place of Presentation
  福岡大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Mn and Be co-doped GaAs for high hole concentration by LT-MEE2003
- Author(s)
  K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
- Organizer
  The 2003 North American Conference on Molecular Beam Epitaxy
- Place of Presentation
  Keystone, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Selective growth of C_<60> layers on GaAs and their crystalline characteristics2003
- Author(s)
  J.Nishinaga, M.Ogawa, Y.Horikoshi
- Organizer
  The 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  Nara, Japan
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Selective area growth of nanoscale channel structure by MEE2003
- Author(s)
  T.Toda, Y.Horikoshi
- Organizer
  The 64th Autumn Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Analysis of the photoluminescence spectra from ZnO2003
- Author(s)
  T.Tatsumi, Y.Horikoshi
- Organizer
  The 63th Autumn Meeting, 2002, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] C_<60>/GaAs構造の選択成長と光学的特性2003
- Author(s)
  西永慈郎、小川将明、木田洋祐、山形浩史、藍原智之、堀越佳治
- Organizer
  第64回応用物理学会学術講演会
- Place of Presentation
  福岡大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Transport characteristics of AlGaAs/GaAs complex superlattice2003
- Author(s)
  H.Koseki, Y.Horikoshi
- Organizer
  The 64th Autumn Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Optical and electrical characteristics of C_<60>/GaAs2003
- Author(s)
  M.Ogawa, J.Nishinaga, Y.Kida, H.Yamagata, T.Aihara, Y.Horikoshi
- Organizer
  The 2003 North American Conference on Molecular Beam Epitaxy
- Place of Presentation
  Keystone, USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Si(111)基板上のZnO結晶成長におけるMgOバッファ層の効果2003
- Author(s)
  藤田実樹、川本典明、笹島正則、辰巳知彦、堀越佳治
- Organizer
  第50回応用物理学関係連合講演会
- Place of Presentation
  神奈川大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Giant magnetoresistance of spatially separated doping of Mn and Be in GaAs2003
- Author(s)
  H.Fukui, Y.Horikoshi
- Organizer
  The 64th Autumn Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MnとBeを変調ドーピングしたGaAsにおける巨大磁気抵抗効果2003
- Author(s)
  福井英夫、小野満恒二、前田孝、平山祥郎、堀越佳治
- Organizer
  第64回応用物理学会学術講演会
- Place of Presentation
  福岡大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] マグネトロンスパッタ法で作製したGaO薄膜の基板温度依存性MgOバッファ層を用いたSi(111)基板上のZnO結晶の結晶性改善2003
- Author(s)
  アカル・アリ・トゥルクメン, 奥田成生、石川裕記、福井誠、竹内登志, 藤田実樹、笹島正則、川本典明、堀越佳治
- Organizer
  第64回応用物理学会学術講演会
- Place of Presentation
  福岡大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Doping characteristics of acceptor impurity in GaAs grown by LT-MEE2003
- Author(s)
  H.Fukui, Y.Horikoshi
- Organizer
  The 50th Spring Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MEE法によるAlGaAs/GaAs量子井戸の選択成長2003
- Author(s)
  長谷川剛史、岡田大輔、遠田健、小川将明、堀越佳治
- Organizer
  第50回応用物理学関係連合講演会
- Place of Presentation
  神奈川大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Selective growth of C60/GaAs and the optical characteristics2003
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Organizer
  The 64th Autumn Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] RF-MBE法によるnon-polar GaNへのBeドーピング2003
- Author(s)
  袖澤純、渡也寸雅、山水大史、吉澤銀河、堀越佳治
- Organizer
  第64回応用物理学会学術講演会
- Place of Presentation
  福岡大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Selective area growth of AlGaAs/GaAs quantum well by MEE2003
- Author(s)
  T.Hasegawa, Y.Horikoshi
- Organizer
  The 50th Spring Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Growth of H-doped ZnO films by using RF-MBE2003
- Author(s)
  M.Sasajima, Y.Horikoshi
- Organizer
  The 64th Autumn Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] RF-MEE法によるGaN成長においてIII-V族比が極性におよぼす影響2003
- Author(s)
  吉澤銀河、杉田茂宣、袖澤純、山水大史、渡也寸雅、堀越佳治
- Organizer
  第50回応用物理学関係連合講演会
- Place of Presentation
  神奈川大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Effect of MgO buffer layer on the growth of ZnO on Si(111)substrate2003
- Author(s)
  M.Fujita, Y.Horikoshi
- Organizer
  The 50th Spring Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MBE growth of ZnO using initial Zn layer and MgO buffer layer on Si(111)substrates2003
- Author(s)
  M.Fujita, N.Kawamoto, M.Sasajima, Y.Horikoshi
- Organizer
  The 2003 North American Conference on Molecular Beam Epitaxy
- Place of Presentation
  Keystone
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Nonradiative recombination centers activated by optical bias in AlGaAs/GaAs single quantum wells2003
- Author(s)
  T.Chavanapranee, Y.Horikoshi
- Organizer
  The 64th Autumn Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] The effect of V/III ratio in the polarity of GaN grown by RF-MBE2003
- Author(s)
  G.Yoshizawa, Y.Horikoshi
- Organizer
  The 50th Spring Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Formation of GaAs dot chain induced by FIB implantation2003
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Organizer
  The 50th Spring Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Electrical characteristics of Ni ion implanted GaAs2003
- Author(s)
  K.Onomitsu, Y.Horikoshi
- Organizer
  The 64th Autumn Meeting, 2003, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy2003
- Author(s)
  T.Toda, T.Hasegawa, T.Iwai, T.Uehara, Y.Horikoshi
- Organizer
  Conference : Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces
- Place of Presentation
  Max-Planck-Institute, Stuttgart, Germany
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MBE法によるGaAs(111)A基板上へのInSbの成長とpn接合作製2002
- Author(s)
  天野秀俊、河原塚篤、鈴木僚、黒木敏宏、西永慈郎、堀越佳治
- Organizer
  第63回応用物理学会学術講演会
- Place of Presentation
  新潟大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Photoluminescence spectra of Be-doped GaN grown by RF-MBE2002
- Author(s)
  Y.Watari, Y.Horikoshi
- Organizer
  The 63th Autumn Meeting, 2002, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Growth of InSb on GaAs(111)A substrate by MBE and fabrication of p-n junction2002
- Author(s)
  H.Amano, Y.Horikoshi
- Organizer
  The 63th Autumn Meeting, 2002, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Micro photoluminescence spectroscopy of C60-doped GaAs grown by MEE2002
- Author(s)
  K.Nomoto, Y.Horikoshi
- Organizer
  The 63th Autumn Meeting, 2002, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Improvement of Crystal Quality of GaN by Modulated Molecular Beam Epitaxy2002
- Author(s)
  K.T Liu, T.Tezuka, S.Sugita, Y.Watari, Y.Horikoshi, Y.K.Su
- Organizer
  International Conference on Solid State Devices and Materials(SSDM 2002)
- Place of Presentation
  Nagoya, Japan
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] 単一量子井戸への薄膜挿入によるサブバンド間隔の変調2002
- Author(s)
  チャバナパニー・トサポーン、堀越佳治
- Organizer
  第63回応用物理学会学術講演会
- Place of Presentation
  新潟大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MEE成長によるC_<60>-doped GaAsの顕微フォトルミネッセンス測定2002
- Author(s)
  野本和生、木田洋祐、堀越佳治
- Organizer
  第63回応用物理学会学術講演会
- Place of Presentation
  新潟大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Area selective epitaxy of anti-dot structure by solid source MBE using MEE deposition sequence2002
- Author(s)
  D.Okada, H.Hasegawa, T.Hasegawa, Y.Horikoshi, T.Saitoh
- Organizer
  29^<th> Int'l Symposium on Compound Semiconductors
- Place of Presentation
  Lausanne, Switzerland
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Compositional nonuniformity in MBE grown InAsSb on GaAs(111)A substrates2002
- Author(s)
  R.Suzuki, Y.Horikoshi
- Organizer
  The 63th Autumn Meeting, 2002, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] RF-MEE法によるBe-doped GaNのフォトルミネッセンス特性2002
- Author(s)
  渡也寸雅、杉田茂宣、吉澤銀河、山水大史、袖澤純、堀越佳治
- Organizer
  第63回応用物理学会学術講演会
- Place of Presentation
  新潟大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Area selective epitaxy of anti-dot structure by solid source MBE using MEE deposition sequence2002
- Author(s)
  D.Okada, H.Hasegawa, T.Hasegawa, Y.Horikoshi, T.Saitoh
- Organizer
  29th Int'l Symposium on Compound Semiconductors
- Place of Presentation
  Lausanne, Switzerland
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Modulation of intersubband separation in single quantum well by thin layer insertion2002
- Author(s)
  T.Chavanapranee, Y.Horikoshi
- Organizer
  The 63th Autumn Meeting, 2002, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MBE growth of p-type GaN by Be doping2002
- Author(s)
  S.Sugita, Y.Watari, G.Yoshizawa, J.Sodesawa, H.Yamamizu, K.T.Liu, Y.K.Su, Y.Horikoshi
- Organizer
  International Conference on Molecular Beam Epitaxy
- Place of Presentation
  San Francisco, USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] MBE法を用いてGaAs(111)A面へ成長したGeドープInAsの電気的特性2002
- Author(s)
  黒木敏宏、天野秀俊、鈴木僚、西永慈郎、堀越佳治
- Organizer
  第63回応用物理学会学術講演会
- Place of Presentation
  新潟大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] GaAs(111)A基板上のMBE成長InAsSb中の組成不均一2002
- Author(s)
  鈴木僚、三好浩之、天野秀俊、黒木敏宏、西永慈郎、堀越佳治
- Organizer
  第63回応用物理学会学術講演会
- Place of Presentation
  新潟大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Comparative study of p-type dopants, Mg and Be GaN grown by RF-MBE2002
- Author(s)
  S.Sugita, Y.Watari, G.Yoshizawa, J.Sodesawa, H.Yamamizu, K.T.Liu, Y.K.Su, Y.Horikoshi
- Organizer
  29^<th> Int'l Symposium on Compound Semiconductors
- Place of Presentation
  Lausanne, Switzerland
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] フォトルミネッセンス測定によるZnOの欠陥スペクタクル解析2002
- Author(s)
  辰巳知彦、藤田実樹、川本典明、笹島正則、堀越佳治
- Organizer
  第63回応用物理学会学術講演会
- Place of Presentation
  新潟大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Electrical properties of Ge-doped InAs grown on GaAs(111)A by MBE2002
- Author(s)
  T.Kuroki, Y.Horikoshi
- Organizer
  The 63th Autumn Meeting, 2002, The Japan Society of Applied Physics
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Comparative study of p-type dopants, Mg and Be GaN grown by RF-MBE2002
- Author(s)
  S.Sugita, Y.Watari, G.Yoshizawa, J.Sodesawa, H.Yamamizu, K.T.Liu, Y.K.Su, Y.Horikoshi
- Organizer
  29th Int'l Symposium on Compound Semiconductors
- Place of Presentation
  Lausanne, Switzerland
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350170
[Presentation] Electrical characteristics of C60 doped HEMT structures
- Author(s)
  J. Nishinaga, Y. Horikoshi
- Organizer
  18th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Flagstaff, USA
- Year and Date
  2014-09-07 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Optical Properties of AlGaAs/GaAs superlattice solar cells
- Author(s)
  M. Kuramoto, H. Urabe, T. Nakano, A. Kawaharazuka, J. Nishinaga, T. Makimoto, and Y. Horikoshi
- Organizer
  18th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Flagstaff, USA
- Year and Date
  2014-09-07 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] MEE法を用いたGaAs (001)基板上へのCIS-CGS低温成長
- Author(s)
  谷口龍希、サティアバマティル、堀越佳治、牧本俊樹
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] High-absorption-efficiency superlattice solar cells by excitons
- Author(s)
  J. Nishinaga, A. Kawaharazuka, and Y. Horikoshi
- Organizer
  Grand Renewable Energy 2014
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2014-07-27 – 2014-08-01
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] AlxGa1-xAs/GaAs超格子太陽電池における障壁層厚さの効果
- Author(s)
  20.倉本真，浦部宏之，中野朋洋，河原塚篤，西永慈郎，牧本俊樹，堀越佳治
- Organizer
  第７５回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Optical and Electrical properties of CuInSe2/(CuGaSe2:Ge) Superlattice grown on GaAs(001)
- Author(s)
  S. Thiru, A. Kawaharazuka, and Y. Horikoshi
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  Montpellier, France
- Year and Date
  2014-05-11 – 2014-05-15
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] GaAs(111)B面上のGaの挙動
- Author(s)
  河原塚篤，堀越佳治
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Recombination current in AlGaAs/GaAs superlattice solar cells grown by molecular beam epitaxy
- Author(s)
  A. Kawaharazuka, J. Nishinaga, and Y. Horikoshi
- Organizer
  18th International Conference on Molecular Beam Epitaxy,
- Place of Presentation
  Flagstaff, USA
- Year and Date
  2014-09-07 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Electrical characteristics of C60 doped HEMT structures
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第33回電子材料シンポジウム
- Place of Presentation
  修善寺、日本
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] AlGaAs/GaAs太陽電池における表面再結合制御
- Author(s)
  19.浦部宏之，倉本真，中野朋洋，河原塚篤，牧本俊樹，堀越佳治
- Organizer
  第７５回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] I-V curves of superlattice solar cells at high temperatures
- Author(s)
  J. Nishinaga, A. Kawaharazuka, and Y. Horikoshi
- Organizer
  6th World Conference on Photovoltaic Energy Conversion
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2014-11-23 – 2014-11-27
- Data Source
  KAKENHI-PROJECT-25420299

1. OHDOMARI Iwao (30063720)

# of Collaborated Projects: 6 results

# of Collaborated Products: 0 results
2. ONOMITSU Koji (30350466)

# of Collaborated Projects: 5 results

# of Collaborated Products: 35 results
3. SHINADA Takahiro (30329099)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
4. NISHINAGA Jiro (90454058)

# of Collaborated Projects: 4 results

# of Collaborated Products: 72 results
5. SOTA Takayuki (90171371)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
6. KAWAHARAZUKA Atsushi (40329082)

# of Collaborated Projects: 3 results

# of Collaborated Products: 39 results
7. MIURA Michiko (70291482)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. FUJITA Miki (60386729)

# of Collaborated Projects: 2 results

# of Collaborated Products: 6 results
9. Makimoto Toshiki (50374070)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. SUZUKI Tetsu (90171230)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. KOBAYASHI Masakazu (10241936)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. UTAKA Katsuyuki (20277817)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 逢坂哲彌 (20097249)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 西出宏之 (90120930)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 松本和子 (60111457)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 船津高志 (00190124)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 川原田洋 (90161380)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 日比野浩樹 (60393740)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 前田文彦 (70393741)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 関根佳明 (70393783)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. PLOOG Klaus

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results

HORIKOSHI Yoshiji 堀越 佳治

堀越 佳治 ホリコシ ヨシジ

HORIKOSHI , Yoshiji 堀越 佳治

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Growth of BN on graphene by RF-MBE

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Memory devices using heterointerfaces of fullerene and GaAs

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Development of solar cells with high stability at elevated temperaturesPrincipal Investigator

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Development of new devices using fullerene and GaAs heterostructures.

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Development of new high-speed electronic devices using 1D quantum structuresPrincipal Investigator

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Novel semiconductors with controlled both single-atom number and position

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イオン注入法を利用したナノ構造スピンデバイスに関する研究Principal Investigator

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Active Compensation of the substrate temperature for the growth of high quality II-VI compound films

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単一イオン注入法による半導体ナノ構造スピンデバイスPrincipal Investigator

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微小ディスクレーザー結合による、集積デバイスに関する研究Principal Investigator

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Electron Quantum Correlation in in Semiconductor Quantum-Dot lattice StructuresPrincipal Investigator

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ナノ構造配列を基盤とする分子ナノ工学の構築とマイクロシステムへの展開

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Development of a Heterojunction Structure Detector in the Submillimeter Wave Region

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HORIKOSHI Yoshiji 堀越佳治

堀越佳治ホリコシヨシジ

HORIKOSHI , Yoshiji 堀越佳治