SAKAI Tetsushi 酒井徹志

Researcher Number	60313368
Other IDs
Affiliation (based on the past Project Information) *help	2001 – 2004: 東京工業大学, 大学院・総合理工学研究科, 教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学
Keywords	Principal Investigator ML-MOSFET / MOSFET / SiGe / SBSI / TML-MOSFET / SOI / HfNO / lateral selective etching of SiGe / hydoro-nitric acid / PtSi … More / HfON / i-SiGe横方向選択エッチング / フッ硝酸溶液 / HfNO薄膜 / SiGe横方向選択エッチング / フッ硝酸 / ML-MOFET / high-k gate insulator / AlN_xO_y thin film / ECR sputtering / etching selectivity of SiGe / short channel effect / sub-10nm / 原子層制御窒素ドープエピタキシャル層 / 駆動電流 / サブ10ナノメータ / 高誘電率ゲート絶縁膜 / AlNxOy薄膜 / ECRスパッタ / SiGe選択エッチング / 短チャネル効果 / サブ10ナノメーター Less

A Study on Novel Multi-Layer Channel MOSFET/SOI with 10 nm Gate Length and BeyondPrincipal Investigator
- Principal Investigator
  
  SAKAI Tetsushi
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
New device structure of sub-10nm Si MOSFET/SOIPrincipal Investigator
- Principal Investigator
  
  SAKAI Tetsushi
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology

All 2004 2003 2002 Other

All Journal Article Patent

[Journal Article] Characterization of AlON this films formed by ECR plasma oxidation ofAlN/Si(100)2004
- Author(s)
  Shun-ichiro Ohmi, Go Yamanaka, Tetsushi Sakai
- Journal Title
  
  IEICE Trans.Electron E87-C
  
  Pages: 24-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Journal Article] Separation by Bonding Si Islands (SBSI) for LSI Applications2004
- Author(s)
  T.Sakai et al.
- Journal Title
  
  Second International SiGe Technology and Device Meeting (ISTDM 2004)
  
  Pages: 230-231
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Journal Article] Proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SoGe stacked layers2004
- Author(s)
  D, Sasaki, S, Ohmi, M.Sakuraba, J.Murota, T.Sakai
- Journal Title
  
  Appl.Surf.Sci.224 2004 270 283 224
  
  Pages: 270-273
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Journal Article] Characterization of AION Thin Films Formed by ECR Plasma Oxidation of AIN/Si(100)2004
- Author(s)
  S.Ohmi, G.Yamanaka, T.Sakai
- Journal Title
  
  IEICE Transactions on Electronics E87-C
  
  Pages: 24-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Journal Article] A Proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SiGe stacked layers2003
- Author(s)
  T.Sakai et al.
- Journal Title
  
  Abstracts of First ISTDM
  
  Pages: 31-32
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Journal Article] A proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SiGe stacked layers2003
- Author(s)
  T.Sakai, S.ohmi, D.Sasaki, M.Sakurada, J.Murota
- Journal Title
  
  Abstracts of First International SiGe Technology and Device Meeting
  
  Pages: 31-32
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Journal Article] Proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SiGe stacked layers2003
- Author(s)
  D.Sasaki, S.Ohmi, M.Sakurada, J.Murota, T.Sakai
- Journal Title
  
  Applied Surface Science 224
  
  Pages: 100-103
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Journal Article] AlON thin films formed by ECR plasma oxidation for high-k gate insulator application
- Author(s)
  Go Yamanaka, Shun-ichiro Ohmi, Tetsushi Sakai
- Journal Title
  
  Mat.Res.Soc.Symp: proc. 786
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Patent] 半導体基板、半導体装置及び半導体基板の作製方法2004
- Inventor(s)
  酒井徹志他
- Industrial Property Rights Holder
  東京工業大学
- Filing Date
  2004-10-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Patent] 半導体基板、半導体装置び半導体基板の作製方法2004
- Inventor(s)
  酒井徹志他
- Industrial Property Rights Holder
  東京工業大学
- Filing Date
  2004-10-04
- Data Source
  KAKENHI-PROJECT-15206039
[Patent] 半導体基板、及び半導体基板の作製方法2003
- Inventor(s)
  酒井徹志他
- Industrial Property Rights Holder
  日本国
- Industrial Property Number
  2003-352692
- Filing Date
  2003-10-10
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Patent] 電界効果トランジスタ及びその製造方法2002
- Inventor(s)
  酒井徹志, 室田淳一, 大見俊一郎, 櫻庭政夫
- Industrial Property Rights Holder
  日本国
- Filing Date
  2002-05-02
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Patent] 強誘電体メモリデバイス及び強誘電体メモリデバイスの製造方法2002
- Inventor(s)
  酒井徹志, 石原宏, 大見俊一郎
- Industrial Property Rights Holder
  日本国
- Filing Date
  2002-09-26
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450138

1. MUROTA Junichi (70182144)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
2. OHMI Shun-ichiro (30282859)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
3. MATSUO Seitaro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SAKAI Tetsushi 酒井 徹志

Research Projects

Research Products

Co-Researchers

A Study on Novel Multi-Layer Channel MOSFET/SOI with 10 nm Gate Length and BeyondPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

New device structure of sub-10nm Si MOSFET/SOIPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Characterization of AlON this films formed by ECR plasma oxidation ofAlN/Si(100)2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Separation by Bonding Si Islands (SBSI) for LSI Applications2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SoGe stacked layers2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Characterization of AION Thin Films Formed by ECR Plasma Oxidation of AIN/Si(100)2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] A Proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SiGe stacked layers2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] A proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SiGe stacked layers2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SiGe stacked layers2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] AlON thin films formed by ECR plasma oxidation for high-k gate insulator application

Author(s)

Journal Title

Description

Data Source

[Patent] 半導体基板、半導体装置及び半導体基板の作製方法2004

Inventor(s)

Industrial Property Rights Holder

Filing Date

Description

Data Source

[Patent] 半導体基板、半導体装置び半導体基板の作製方法2004

Inventor(s)

Industrial Property Rights Holder

Filing Date

Data Source

[Patent] 半導体基板、及び半導体基板の作製方法2003

Inventor(s)

Industrial Property Rights Holder

Industrial Property Number

Filing Date

Description

Data Source

[Patent] 電界効果トランジスタ及びその製造方法2002

Inventor(s)

Industrial Property Rights Holder

Filing Date

Description

Data Source

SAKAI Tetsushi 酒井徹志