Nakano Yoshitaka 中野由崇

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NAKANO Yoshitaka 中野由崇

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Researcher Number	60394722
Other IDs	https://orcid.org/0000-0002-7259-3509
Affiliation (Current)	2024: 中部大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2014 – 2022: 中部大学, 工学部, 教授 2017: 中部大学, 総合工学研究所, 教授 2016: 中部大学, 工学部電子情報工学科, 教授 2014: 中部大学, 総合工学研究所 2010 – 2013: 中部大学, 総合工学研究所, 准教授 2012: 中部大学, 付置研究所, 准教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator 欠陥準位 / 電流コラプス / スイッチング特性 / AlGaN/GaNヘテロ構造 / 炭素 / MOCVD結晶成長 / フォトルミネッセンス / 固有欠陥準位 / 次世代パワー半導体 / フォトルミネッセンス計測 … More / 光容量過渡分光計測 / ガリウム空孔 / 酸素空孔 / 真空中アニール / 酸化ガリウム / イオン衝撃 / ノーマリーオフ / パワー半導体 / N空孔 / Ga空孔 / CF4 / Mgアクセプター / Ar / プラズマイオン / 光容量過渡分光法 / 電気的ダメージ / プラズマイオン衝撃 / p型GaN / パワーデバイス / Si基板上AlGaN/GaNヘテロ構造 / 炭素アクセプター / 炭素ドーピング / SiC層 / 熱的安定性 / ターンオン・スイッチング特性 / 3C-SiC層 / Si基板 / ショットキーダイオード / 有機金属気相成長 / デバイス･スイッチング特性 / デバイス・スイッチング特性 / GaNバッファ層 / MOCVD / イエローバンド / DLOS / フォトキャパシタンス / 残留炭素 / 結晶成長 / 半導体欠陥準位 / 電子・電気材料 / 結晶工学 / 半導体物性 / 窒化物半導体 / 電気・電子材料 … More Except Principal Investigator 窒化物半導体 / 界面 / 水素 / GaN / イオンビーム / プラズマ / ドライエッチング / 軟Ｘ線吸収 / 欠陥 / 化合物半導体 / ＵＶ照射 / TiO2 / UV / ワイドギャップ半導体 / 紫外線照射 / プラズマエッチング / 絶縁膜 / 半導体デバイス / センサ / 窒化アルミニウム / ショットキー構造 / AlGaN / ヘテロ構造 / AlGaN/GaN / ヘテロ接合 / 電気・電子材料 Less

次世代パワー半導体β-Ga2O3の固有欠陥準位の全容解明Principal Investigator
- Principal Investigator
  
  中野由崇
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Chubu University
Global Investigation of Electrical Damage Introduced into p-GaN Films by Plasma Ion BombardmentsPrincipal Investigator
- Principal Investigator
  
  Nakano Yoshitaka
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Chubu University
Correlation between deep-level defects and turn-on switching characteristics in AlGaN/GaN hetero-structures grown on Si substratesPrincipal Investigator
- Principal Investigator
  
  NAKANO Yoshitaka
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chubu University
Investigation on hydrogen interaction with nitride-based semiconductor metal/semiconductor interfaces
- Principal Investigator
  
  Irokawa Yoshihiro
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science
Elucidation of UV irradiation effect in plasma etching process of wide gap semiconductors
- Principal Investigator
  
  Niibe Masahito
- Project Period (FY)
  2014 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Hyogo
Correlation between deep-level defects and turn-on switching characteristics in AlGaN/GaN hetero-structuresPrincipal Investigator
- Principal Investigator
  
  NAKANO Yoshitaka
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chubu University
Hydrogen sensors using nitride-based semiconsuctor devices
- Principal Investigator
  
  IROKAWA Yoshihiro
- Project Period (FY)
  2011 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science
Band-gap states and quality analyses of AlGaN/GaN hetero-structuresPrincipal Investigator
- Principal Investigator
  
  NAKANO Yoshitaka
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chubu University
Research on nitride based semiconductor power devices
- Principal Investigator
  
  IROKAWA Yoshihiro
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science

[Book] GaNパワーデバイスの技術展開　第4章第2節「AlGaN/GaNヘテロ構造の欠陥準位評価」2012
- Author(s)
  中野由崇 (分担執筆)
- Publisher
  S&T出版
- Data Source
  KAKENHI-PROJECT-22560309
[Book] AlGaN/GaNヘテロ構造の欠陥準位評価2012
- Author(s)
  中野由崇
- Publisher
  S&T出版
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] Photocatalytic Activity Enhancement of Anatase/Rutile‐Mixed Phase TiO2 Nanoparticles Annealed with Low‐Temperature O2 Plasma2021
- Author(s)
  Kawakami Retsuo、Mimoto Yuki、Yanagiya Shin-ichiro、Shirai Akihiro、Niibe Masahito、Nakano Yoshitaka、Mukai Takashi
- Journal Title
  
  physica status solidi (a)
  
  Volume: 218 Issue: 24 Pages: 2100536-2100536
- DOI
  10.1002/pssa.202100536
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04497, KAKENHI-PROJECT-20K03917
[Journal Article] Effects of air-based nonequilibrium atmospheric pressure plasma jet treatment on characteristics of polypropylene film surfaces2020
- Author(s)
  Kawakami Retsuo、Yoshitani Yuki、Mitani Kimiaki、Niibe Masahito、Nakano Yoshitaka、Azuma Chisato、Mukai Takashi
- Journal Title
  
  Applied Surface Science
  
  Volume: 509 Pages: 144910-144910
- DOI
  10.1016/j.apsusc.2019.144910
- NAID
  120007175672
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04497
[Journal Article] Effects of nonequilibrium atmospheric-pressure O2 plasma-assisted annealing on anatase TiO2 nanoparticles2020
- Author(s)
  Kawakami Retsuo、Yoshitani Yuki、Shirai Akihiro、Yanagiya Shin-ichiro、Koide Hirofumi、Mimoto Yuki、Kajikawa Kosuke、Niibe Masahito、Nakano Yoshitaka、Azuma Chisato、Mukai Takashi
- Journal Title
  
  Applied Surface Science
  
  Volume: 526 Pages: 146684-146684
- DOI
  10.1016/j.apsusc.2020.146684
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04497, KAKENHI-PROJECT-20K03917
[Journal Article] Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates2019
- Author(s)
  Kato Masashi、Ichikawa Naoto、Nakano Yoshitaka
- Journal Title
  
  Materials Letters
  
  Volume: 254 Pages: 96-98
- DOI
  10.1016/j.matlet.2019.07.043
- Data Source
  KAKENHI-PROJECT-19K04497
[Journal Article] Effects of ultraviolet wavelength and intensity on AlGaN thin film surfaces irradiated simultaneously with CF4 plasma and ultraviolet2019
- Author(s)
  Kawakami Retsuo、Niibe Masahito、Nakano Yoshitaka、Yanagiya Shin-ichiro、Yoshitani Yuki、Azuma Chisato、Mukai Takashi
- Journal Title
  
  Vacuum
  
  Volume: 159 Pages: 45-50
- DOI
  10.1016/j.vacuum.2018.10.017
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06276
[Journal Article] Characteristics of TiO 2 thin films surfaces treated by O 2 plasma in dielectric barrier discharge with the assistance of external heating2018
- Author(s)
  Kawakami Retsuo、Niibe Masahito、Nakano Yoshitaka、Araki Yuma、Yoshitani Yuki、Azuma Chisato、Mukai Takashi
- Journal Title
  
  Vacuum
  
  Volume: 152 Pages: 265-271
- DOI
  10.1016/j.vacuum.2018.03.051
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390066
[Journal Article] Deep-level defects in homoepitaxial p-type GaN2018
- Author(s)
  Nakano Yoshitaka
- Journal Title
  
  Journal of Vacuum Science & Technology A
  
  Volume: 36 Issue: 2 Pages: 023001-023001
- DOI
  10.1116/1.5017867
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06276
[Journal Article] Generation of electrical damage in n-GaN films following treatment in a CF4 plasma2017
- Author(s)
  Nakano Yoshitaka, Kawakami Retsuo, Niibe Masahito
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 11 Pages: 116201-116201
- DOI
  10.7567/apex.10.116201
- NAID
  210000136023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06276, KAKENHI-PROJECT-26390066
[Journal Article] Characteristics of N2 and O2 Plasma-Induced Damages on AlGaN Thin Film Surfaces2017
- Author(s)
  Kawakami Retsuo、Niibe Masahito、Nakano Yoshitaka、Tanaka Ryo、Azuma Chisato、Mukai Takashi
- Journal Title
  
  physica status solidi (a)
  
  Volume: 214 Issue: 11 Pages: 1700393-1700393
- DOI
  10.1002/pssa.201700393
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06276, KAKENHI-PROJECT-26390066
[Journal Article] Electrical Investigation of Turn-On Capacitance Recovery Characteristics in Carbon-Doped AlGaN/GaN Hetero-Structures Grown on Si Substrates2017
- Author(s)
  Nakano Yoshitaka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 6 Issue: 12 Pages: P828-P831
- DOI
  10.1149/2.0191712jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06276
[Journal Article] Electrical Characterization of β-Ga2O3 Single Crystal Substrates2017
- Author(s)
  Nakano Yoshitaka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 6 Issue: 9 Pages: P615-P617
- DOI
  10.1149/2.0181709jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06276
[Journal Article] Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates2017
- Author(s)
  Masatomo Sumiya, Naoki Toyomitsu, Yoshitaka Nakano, Jianyu Wang, Yoshitomo Harada, Liwen Sang, Takashi Sekiguchi, Tomohiro Yamaguchi, Tohru Honda
- Journal Title
  
  APL Materials
  
  Volume: 5 Issue: 1 Pages: 0161051-8
- DOI
  10.1063/1.4974935
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06276
[Journal Article] AlGaN surfaces etched by CF4 plasma with and without the assistance of near-ultraviolet irradiation2017
- Author(s)
  Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Takashi Mukai
- Journal Title
  
  Vacuum
  
  Volume: 136 Pages: 28-35
- DOI
  10.1016/j.vacuum.2016.11.016
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06276, KAKENHI-PROJECT-26390066
[Journal Article] Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-Ray Absorption Spectroscopy2016
- Author(s)
 M. Niibe, T. Kotaka, R. Kawakami, Y. Nakano, T. Mukai
- Journal Title
 
 e-J. Surf. Sci. Nanotechnol.
 
 Volume: 14 Issue: 0 Pages: 9-13
- DOI
 10.1380/ejssnt.2016.9
- NAID
 130005120933
- ISSN
 1348-0391
- Language
 English
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
 KAKENHI-PROJECT-26390066
[Journal Article] Surface Analysis of AlGaN Treated with CF4 and Ar Plasma Etching2015
- Author(s)
 S. Hirai, M. Niibe, R. Kawakami, T. Shirahama, Y. Nakano, T. Mukai
- Journal Title
 
 e-J. Surf. Sci. Nanotechnol.
 
 Volume: 13 Issue: 0 Pages: 481-487
- DOI
 10.1380/ejssnt.2015.481
- NAID
 130005114535
- ISSN
 1348-0391
- Language
 English
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
 KAKENHI-PROJECT-26390066
[Journal Article] Comparison between AiGaN surfaces etchtched bycarbon tetrafluoride and argon plasmas: Effect of the fluorine impurities incorporated in the surface2015
- Author(s)
  R. Kawakami, M. Niibe, Y. Nakano, T. Shirahama, S. Hirai, T. Mukai
- Journal Title
  
  Vacuum
  
  Volume: 119 Pages: 264-269
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390066
[Journal Article] Recovery of x-ray absorption spectral profile in etched TiO2 thin films2015
- Author(s)
  1)Keiji Sano, Masahito Niibe, Retsuo Kawakami and Yoshitaka Nakano
- Journal Title
  
  J. Vac. Sci. Technol.
  
  Volume: A33 Pages: 031403-031403
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26390066
[Journal Article] Ar+-irradiation-induced damage in hydride vapor-phase epitaxy GaN films2015
- Author(s)
  Y. Nakano, D. Ogawa, K. Nakamura, R. Kawakami, M. Niibe
- Journal Title
  
  J. Vac. Sci. Technol. A
  
  Volume: 33 Issue: 4 Pages: 0314031-5
- DOI
  10.1116/1.4922593
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390066, KAKENHI-PROJECT-25420300
[Journal Article] Electrical Investigation of Deep-Level Defects Induced in AlGaN/GaN Heterostrucutures by CF4 Plasma Treatments2015
- Author(s)
  2)R. Kawakami, Y. Nakano, M. Niibe, T. Shirahama, and T. Mukai
- Journal Title
  
  ECS Solid State Letters
  
  Volume: 4 Pages: 36-38
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390066
[Journal Article] Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures2015
- Author(s)
  Yoshitaka Nakanoa, Yoshihiro Irokawa and Masatomo Sumiya
- Journal Title
  
  Philosophical Magazine Letters
  
  Volume: 95 Issue: 6 Pages: 333-339
- DOI
  10.1080/09500839.2015.1062154
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26420286, KAKENHI-PROJECT-25420300
[Journal Article] Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments2015
- Author(s)
  R. Kawakamia, Y. Nakano, M. Niibe, T. Shirahama, T. Mukai
- Journal Title
  
  ECS Solid State Letters
  
  Volume: 4 Issue: 4 Pages: 36-38
- DOI
  10.1149/2.0011505ssl
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420300
[Journal Article] Comparison between AlGaN Surfaces Etched by Carbon Tetrafluoride and Argon Plasmas: Effect of the Fluorine Impurities Incorporated in the Surface2015
- Author(s)
  R. Kawakami, M. Niibe, Y. Nakano, T. Shirahama, S. Hirai, T. Mukai
- Journal Title
  
  Vacuum
  
  Volume: 119 Pages: 264-269
- DOI
  10.1016/j.vacuum.2015.06.002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420300
[Journal Article] Optical and electrical investigation of Ar+-irradiated GaN2014
- Author(s)
  Miao-Gen Chen, Keiji Nakamura, Yan-Qing Qiu, Daisuke Ogawa, Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 11 Pages: 111003-111003
- DOI
  10.7567/apex.7.111003
- NAID
  210000137269
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420300, KAKENHI-PROJECT-26390066
[Journal Article] Damage Characteristics of n-GaN Thin Film Surfaces Etched by Ultraviolet Light-Assisted Helium Plasmas2014
- Author(s)
  5)R. Kawakami, M. Niibe, Y. Nakano, T. Shirahama, K. Aoki, K. Oba, M. Takabatake, T. Mukai
- Journal Title
  
  Thin Solid Films
  
  Volume: 570 Pages: 81-86
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390066
[Journal Article] Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures2014
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
- Journal Title
  
  Materials Research Society Symposium Proceedings
  
  Volume: 1635 Pages: 1-6
- DOI
  10.1557/opl.2014.102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420300
[Journal Article] Steady-state photo-capacitance spectroscopy investigation of Carbon-related deep-level defects in AlGaN/GaN hetero-structures grown by MOCVD2013
- Author(s)
  Yoshitaka Nakano
- Journal Title
  
  Trends in Applied Spectroscopy
  
  Volume: 9 Pages: 59-65
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420300
[Journal Article] Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures2013
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 112(10) Issue: 10 Pages: 106103-106103
- DOI
  10.1063/1.4767367
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions of GaN Buffer Layers2012
- Author(s)
  Yoshitaka Nakano
- Journal Title
  
  Materials Research Society Symposium Proceedings
  
  Volume: VOL.1396
- DOI
  10.1557/opl.2012.14
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures2011
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai
- Journal Title
  
  Electrochemical and Solid-State Letters
  
  Volume: 15(2) Issue: 2 Pages: H44-H46
- DOI
  10.1149/2.025202esl
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] Photo-capacitance spectroscopy study of deep-level defects in free-standing n-GaN substrates using transparent conductive polymer Schottky contacts2011
- Author(s)
  Y.Nakano, M.Lozac'h, N.Matsuki, K.Sakoda, M.Sumiya
- Journal Title
  
  Journal of Vaccum Science & Teclmology B
  
  Volume: VOL.29
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] Photo-Capacitance Spectroscopy Investigation of Deep-Level Defects in AlGaN/GaN hetero-structures with different current collapses2010
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai
- Journal Title
  
  Physica Status Solidi (RRL)
  
  Volume: 4(12) Issue: 12 Pages: 374-376
- DOI
  10.1002/pssr.201004421
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapses2010
- Author(s)
  Yoshitaka Nakano
- Journal Title
  
  Phys.Status Solidi RRL
  
  Volume: 4 Pages: 374-376
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Journal Article] Photo-Capacitance Spectroscopy investigation of Deep-Level Defects in AlGaN/GaN hetero-structures with different current collapses2010
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
- Journal Title
  
  physica status solidi (Rapid Research Letters)
  
  Volume: VOL.4 Pages: 374-376
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapses Phys.2010
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
- Journal Title
  
  Status Solidi RRL 4
  
  Pages: 374-376
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Journal Article] Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes, Phys.2009
- Author(s)
  Y.Irokawa, N.Matsuki, M.Sumiya, Y.Sakuma, T.Sekiguchi, T.Chikyo, Y.Sumida, Y.Nakano
- Journal Title
  
  Status Solidi RRL 3
  
  Pages: 266-268
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Patent] ワイドギャップ半導体のバンドギャップ電子物性測定方法及び測定装置2012
- Inventor(s)
  中野由崇、中村圭二
- Industrial Property Rights Holder
  同上
- Industrial Property Number
  2012-168032
- Filing Date
  2012-07-30
- Data Source
  KAKENHI-PROJECT-22560309
[Patent] ワイドギャップ半導体のバンドギャップ電子物性測定方法及び測定装置2012
- Inventor(s)
  中野由崇、中村圭二
- Industrial Property Rights Holder
  中野由崇、中村圭二
- Industrial Property Rights Type
  特許
- Filing Date
  2012-07-30
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Atmospheric-Pressure Low-Temperature O2 Plasma-Assisted Annealing on Visible-Light-Induced Photocatalytic Activity of Pt-doped Rutile TiO2 Nanoparticles2022
- Author(s)
  Yuta Makino, Retsuo Kawakami, Shin-ichiro Yanagiya, Masahito Niibe, Yoshitaka Nakano and Takashi Mukai
- Organizer
  The 43rd International Symposium on Dry Process (DPS2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04206
[Presentation] Polyethylene Glycol Doping Effects on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles2022
- Author(s)
  Takumi Matsumoto, Retsuo Kawakami, Shin-ichiro Yanagiya, Masahito Niibe, Yoshitaka Nakano and Takashi Mukai
- Organizer
  The 43rd International Symposium on Dry Process (DPS2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04206
[Presentation] 高温度真空中アニール処理したb-Ga2O3(-201)単結晶の欠陥準位評価2022
- Author(s)
  豊留彬、中野由崇
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] 光熱偏向分光法によるGaNバルク評価2022
- Author(s)
  角谷正友, 中野由崇, 小出康夫, 本田徹
- Organizer
  第41回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-22K04206
[Presentation] Ar+イオン衝撃により p型 GaN に導入される電気的ダメージの UV 光照射効果2022
- Author(s)
  豊留彬、中野由崇、川上烈生、新部正人
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] Nonequilibrium Atmospheric-Pressure O2 Plasma-Assisted Annealing Effect on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles2021
- Author(s)
  Mimoto Yuki、Kawakami Retsuo、Yanagiya Shin-ichiro、Masahito Niibe、Nakano Yoshitaka、Mukai Takashi
- Organizer
  42nd International Symposium of Dry Process (DPS 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] Electrical Investigation of Turn-On Capacitance Recovery Characteristics in Auto or External Carbon-doped AlGaN/GaN/SiC/Si2021
- Author(s)
  Hiroki Suzuki、Shigeomi Hishiki、Keisuke Kawamura、Yoshitaka Nakano
- Organizer
  12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] Intrinsic Defect Investigation of n-Type b-Ga2O3 Single Crystals Treated by High-Temperature Annealing in Vacuum2021
- Author(s)
  Toyotome Akira、Nakano Yoshitaka
- Organizer
  The Eighth International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] Photobactericidal Activity of Anatase Titanium Dioxide Nanoparticles Annealed with the Assistance of Nonequilibrium Atmospheric-Pressure Oxygen Plasma2021
- Author(s)
  Retsuo Kawakami、Mimoto Yuki、Shirai kihiro、Yanagiya Shin-ichiro、Niibe Masahito、Nakano Yoshitaka、Takashi Mukai
- Organizer
  42nd International Symposium of Dry Process (DPS 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] Annealing behavior of deep-level defects in unintentionally doped n-type b-Ga2O3 single crystal2021
- Author(s)
  Yoshitaka Nakano、Akira Toyotome、Riku Suzuki、Yuki Yasuda
- Organizer
  12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] 高温度アニール処理したSiドープb-Ga2O3(010)単結晶の電気特性評価2021
- Author(s)
  中野由崇、豊留彬、鈴木陸、安田優綺
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] Electrical Damage Introduced into p-GaN Films by Ar Plasma Treatments2021
- Author(s)
  Akira Toyotome、Yoshitaka Nakano、Retsuo Kawakami、Masahito Niibe
- Organizer
  12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] 大気圧低温O2プラズマ支援熱処理したアナターゼ/ルチル混晶型TiO2ナノ粒子の紫外/可視光触媒活性2021
- Author(s)
  味元勇樹、川上烈生、柳谷伸一郎、新部正人、中野由崇、向井孝志
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] CF4プラズマ処理したp型GaNの電気的ダメージ評価2020
- Author(s)
  中野由崇、豊留彬
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] Ar+イオン照射により生成するp型GaNの電気的ダメージ評価2019
- Author(s)
  中野由崇、豊留彬
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] Deep-Level Defect Investigation of Si-Doped b-Ga2O3 Homoepitaxial Films　Grown by Halide Vapor Phase Epitaxy2019
- Author(s)
  Nakano Yoshitaka、Akira Toyotome
- Organizer
  2019-edition of Compound Semiconductor Week (CSW2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] Electrical Damage Introduced into p-GaN Films by Ar Plasma Treatments2019
- Author(s)
  Nakano Yoshitaka、Akira Toyotome
- Organizer
  7th International Symposium on Organic and Inorganic Materials and Related Nanotechnologies (EM-NANO2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04497
[Presentation] 3C-SiC/Si基板上に作製したAlGaN/GaN/GaN:Cヘテロ構造のターンオン容量回復特性2019
- Author(s)
  中野由崇, 北原功一, 大内澄人, 生川満久, 川村啓介
- Organizer
  第66回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] AlGaN薄膜表面へのCF4プラズマ処理中に及ぼす紫外光同時照射効果2018
- Author(s)
  川上烈生, 芳谷勇樹, 新部正人, 中野由崇, 東知里, 向井孝志
- Organizer
  平成30年度電気関係学会四国支部連合大会
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] HVPE法で結晶成長したb-Ga2O3ホモエピ膜の電気的評価2018
- Author(s)
  中野由崇
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] TiO2 Thin Film Surfaces Treated by O2 Plasma in Dielectric Barrier Discharge with Assistance of Heat Treatment2017
- Author(s)
  Retsuo Kawakami, Kengo Fujimoto, Masahito Niibe, Yuma Araki, Yoshitaka Nakano and Takashi Mukai
- Organizer
  14th International Symp. Sputtering & Plasma Processes
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Electrical Characterization of b-Ga2O3 Single Crystal Substrate2017
- Author(s)
  Nakano Yoshitaka
- Organizer
  The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] Surface Structure Analysis of AlGaN Thin Films Damaged by Oxygen and Nitrogen Plasmas2017
- Author(s)
  Masahito Niibe, Ryo Tanaka, Retsuo Kawakami, Yoshitaka Nakano and Takashi Muka
- Organizer
  The 8th International Symposium on Surface Science (ISSS-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Electrical Damage Introduced into n -GaN Films by CF4 Plasma Treatments2017
- Author(s)
  Yoshitaka Nakano
- Organizer
  9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  中部大学 (愛知県春日井市)
- Year and Date
  2017-03-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] TiO2 薄膜のプラズマ処理試料のXPS法による組成と触媒活性の相関2017
- Author(s)
  荒木佑馬、新部正人、川上烈生、竹平徳崇、中野由崇
- Organizer
  第30回日本放射光学会シンポジウム
- Place of Presentation
  神戸芸術センター（兵庫県神戸市）
- Year and Date
  2017-01-07
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Bulk-Related Current Collapses in Carbon-Doped AlGaN/GaN/GaN:C Hetero-Structures Grown on Si Substrates2017
- Author(s)
  Chikamatsu Akihito, Nakano Yoshitaka
- Organizer
  The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] Generation Behavior of Electrical Damage Introduced into n-GaN Films by CF4 Plasma Treatments2017
- Author(s)
  Nakano Yoshitaka, Kawakami Retsuo, Niibe Masahito
- Organizer
  The 29th International Conference on Defects in Semiconductors (ICDS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] Electrical Investigation of p-GaN Film Homo-Epitaxially Grown on Free-Standing GaN Substrate2017
- Author(s)
  Nakano Yoshitaka
- Organizer
  The 29th International Conference on Defects in Semiconductors (ICDS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] 光触媒TiO2薄膜への加熱を伴うO2 DBDプラズマ処理効果2017
- Author(s)
  川上烈生, 新部正人, 中野由崇, 芳谷勇樹, 東知里, 向井孝志
- Organizer
  平成29年度電気関係学会四国支部連合大会
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Generation Behavior of Electrical Damage Introduced into n-GaN Films by CF4 Plasma Treatments2017
- Author(s)
  Yoshitaka Nakano, Retsuo Kawakami and Masahito Niibe
- Organizer
  29th International Conf. on Defects in Semiconductors (ICDS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Electrical Investigation of Bulk-Related Current Collapses in AlGaN/GaN/GaN:C Hetero-Structures Grown on Si Substrates2017
- Author(s)
  Nakano Yoshitaka, Chikamatsu Akihito
- Organizer
  The 29th International Conference on Defects in Semiconductors (ICDS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] 酸素および窒素プラズマ処理したAlGaN膜の表面分析2017
- Author(s)
  田中良、新部正人、川上烈生、中野由崇、向井孝志
- Organizer
  第30回日本放射光学会シンポジウム
- Place of Presentation
  神戸芸術センター（兵庫県神戸市）
- Year and Date
  2017-01-07
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] CF4プラズマ処理したn-GaN膜の電気的評価2016
- Author(s)
  6) 中野由崇, 坂井佑輔, 新部正人, 川上烈生
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] ガスソースMBE法により作製した3C-SiC(111)自立基板の電気的評価2016
- Author(s)
  中野由崇、浅村英俊、大内澄人、生川満久、稲垣徹、川村啓介
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ (新潟県新潟市)
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] CF4プラズマ処理したn-GaN 膜の電気的評価2016
- Author(s)
  中野由崇, 坂井佑輔, 新部正人, 川上烈生
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] TiO2薄膜のプラズマ処理試料のXPS法による組成と触媒活性の相関2016
- Author(s)
  荒木佑馬、竹平徳崇、新部正人、川上烈生、中野由崇
- Organizer
  第52回X線分析討論会
- Place of Presentation
  筑波大学東京キャンパス（東京都文京区）
- Year and Date
  2016-10-26
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Si基板上AlGaN/GaN/GaN:Cヘテロ構造のターンオン容量回復特性2016
- Author(s)
  中野由崇、近松晃仁
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ (新潟県新潟市)
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] CF4とArプラズマ処理したAlGaN膜の表面分析2016
- Author(s)
  8) 平井翔大，新部正人，川上烈生，竹平徳崇，中野由崇，向井孝志
- Organizer
  第29回日本放射光学会シンポジウム
- Place of Presentation
  東京大学柏の葉キャンパス（千葉県柏市）
- Year and Date
  2016-01-09
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Electrical damage in n-GaN films treated by CF4 plasma2016
- Author(s)
  Yoshitaka Nakano, Masahito Niibe and Retsuo Kawakami
- Organizer
  International Symposium of Dry Process 2016
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Effect of Ultraviolet Light-Assisted CF4 Plasma Irradiation on AlGaN Thin Film Surface2016
- Author(s)
  Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano and Takashi Mukai
- Organizer
  43rd International Symposium on Compound Semiconductors (ISCS2016)
- Place of Presentation
  富山国際会議場（富山県富山市）
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] CF4プラズマ処理したn-GaN膜の電気的ダメージ2016
- Author(s)
  中野由崇、新部正人、川上烈生
- Organizer
  2016年真空・表面科学合同講演会
- Place of Presentation
  名古屋国際会議場 (愛知県名古屋市)
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] Electrical Damage Investigation of n-GaN Films Treated by CF4 Plasma2016
- Author(s)
  Yoshitaka Nakano, Masahito Niibe and Retsuo Kawakami
- Organizer
  43rd International Symposium on Compound Semiconductors (ISCS2016)
- Place of Presentation
  富山国際会議場（富山県富山市）
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] CF4とArプラズマで処理したAlGaN膜の表面分析2016
- Author(s)
  平井翔大, 新部正人, 川上烈生, 竹平徳崇, 中野由崇, 向井孝志
- Organizer
  第29回日本放射光学会年会放射光科学合同シンポジウム (JSR2016)
- Place of Presentation
  柏
- Year and Date
  2016-01-09
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] 炭素ドープしたSi基板上AlGaN/GaNヘテロ構造の容量回復特性2016
- Author(s)
  近松晃仁、中野由崇
- Organizer
  2016年真空・表面科学合同講演会
- Place of Presentation
  名古屋国際会議場 (愛知県名古屋市)
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-16K06276
[Presentation] AlGaN表面特性への酸素プラズマ照射効果2016
- Author(s)
  新部正人, 川上烈生，中野由崇、田中良、荒木佑馬、東知里、向井孝志
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、（新潟県新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] TiO2薄膜のプラズマ処理試料のXPS 法による組成と触媒活性の相関2016
- Author(s)
  7)　荒木佑馬，新部正人，川上烈生，竹平徳崇，中野由崇
- Organizer
  第29回日本放射光学会シンポジウム
- Place of Presentation
  東京大学柏の葉キャンパス（千葉県柏市）
- Year and Date
  2016-01-09
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] CF4プラズマ処理したn-GaN膜の電気的ダメージ2016
- Author(s)
  中野由崇、新部正人、川上烈生
- Organizer
  2016年真空・表面科学合同講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] A Relation between Pinch-Off Voltages and Deep-Level Defects in AlGaN/GaN Hetero-Structures Treated by CF4 Plasma2015
- Author(s)
  Y. Nakano, R. Kawakami, M. Niibe, T. Shirahama, T. Mukae
- Organizer
  11th International Conference on Nitride Semiconductors (ICNS-11)
- Place of Presentation
  Beijing
- Year and Date
  2015-08-30
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] 酸化チタン薄膜表面への酸素プラズマ照射効果2015
- Author(s)
  11)新部正人，荒木佑馬，竹平徳崇，川上烈生，中野由崇，東知里
- Organizer
  第76回秋季応用物理学会学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Carbon-Related Deep-Level Defects and Carrier Trapping Characteristics in AlGaN/GaN Hetero-Structures2015
- Author(s)
  Y. Nakano, Y. Irokawa, M. Sumiya, S. Yagi, H. Kawai
- Organizer
  11th International Conference on Nitride Semiconductors (ICNS-11)
- Place of Presentation
  Beijing
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] 紫外光アシストCF4プラズマでエッチンングされたAlGaN表面分析2015
- Author(s)
  10)新部正人，川上烈生，中野由崇，竹平徳崇，平井翔大，荒木佑馬，東知里，向井孝志
- Organizer
  第76回秋季応用物理学会学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] A Relation between Pinch-Off Voltages and Deep-Level Defects in AlGaN/GaN Hetero-Structures Treated by CF4 Plasma2015
- Author(s)
  2) Y. Nakano, R. Kawakami, M. Niibe, T. Shirahama and T. Mukai
- Organizer
  11th International Conference on Nitride Semiconductors (ICNS-11)
- Place of Presentation
  Beijing, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Comparison between Surface Characteristics of Titanium Oxide Thin Films Treated with N2 Dielectric Barrier Discharge Plasma and Annealed in N2 Gas2015
- Author(s)
  5) R. Kawakami, M. Niibe, Y. Nakano and T. Mukai
- Organizer
  13th International Symposium on Sputtering & Plasma Processes (ISSP)
- Place of Presentation
  京都リサーチパーク, （京都府京都市）
- Year and Date
  2015-07-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] CF4とArプラズマで処理したAlGaN/GaNの電気特性2015
- Author(s)
  川上烈生, 新部正人, 中野由崇, 東知里, 向井孝志
- Organizer
  平成27年度電気関係学会四国支部連合大会
- Place of Presentation
  高知
- Year and Date
  2015-09-26
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Ar+-Irradiation Induced Damage in Hydride Vapor-Phase Epitaxy GaN2015
- Author(s)
  Y. Nakano, D. Ogawa, K. Nakamura, R. Kawakami, M. Niibe
- Organizer
  The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
- Place of Presentation
  Niigata
- Year and Date
  2015-06-16
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Anatase TiO2 Thin Films Grown by Facing-Target Reactive Sputtering and Its Impact on Photocatalytic Activity2015
- Author(s)
  1) R. Kawakami, M. Niibe, Y. Nakano, C. Azuma and T. Mukai
- Organizer
  International Symposium of Dry Process 2015
- Place of Presentation
  Awaji-Yumebutai International Conference Center, （兵庫県淡路島）
- Year and Date
  2015-11-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] TiO2薄膜のプラズマ処理試料のXPS 法による組成と触媒活性の相関2015
- Author(s)
  9) 荒木佑馬，新部正人，川上烈生，竹平徳崇，中野由崇
- Organizer
  第51回Ｘ線分析討論会
- Place of Presentation
  姫路・西はりま地場産業センター（兵庫県姫路市）
- Year and Date
  2015-10-29
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Ar+-Irradiation Induced Damage in Metal-Organic Vapor Phase Epitaxy GaN2015
- Author(s)
  Y. Nakano, D. Ogawa, K. Nakamura, R. Kawakami, M. Niibe
- Organizer
  The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
- Place of Presentation
  Niigata
- Year and Date
  2015-06-16
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] AlGaN/GaNヘテロ構造の炭素関連欠陥準位とターンオン電流回復特性2014
- Author(s)
  中野由崇，色川芳宏，角谷正友, 住田行常，八木修一, 河合弘治
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] ArとCF4プラズマで処理したAlGaN膜の表面分析2014
- Author(s)
  平井翔大，新部正人，白濱達夫，川上烈生，中野由崇，向井孝志
- Organizer
  兵庫県立大学知の交流シンポジウム
- Place of Presentation
  姫路商工会議所（兵庫県姫路市）
- Year and Date
  2014-09-24
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Containing Various Carbon Concentrations2013
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
- Organizer
  2013 Materials Research Society Fall Meeting
- Place of Presentation
  Hynes Convention Center (Boston)
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures2013
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
- Organizer
  International Symposium on Compound Semiconductors 2013
- Place of Presentation
  Kobe Convention Center
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Correlation between turn-on recovery characteristics and deep-level defects in AlGaN/GaN　hetero-structures2012
- Author(s)
  Yoshitaka Nakano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  札幌コンベンションセンター　(札幌)
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Correlation between turn-on recovery characteristics and deep-level defects in AlGaN/GaN hetero-structures2012
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
- Organizer
  International Workshop on Nitride Semiconductors2012
- Place of Presentation
  札幌コンベンションセンター(札幌)Sapporo.
- Year and Date
  2012-10-16
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures2012
- Author(s)
  Yoshitaka Nakano
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)
- Place of Presentation
  中部大学(愛知県春日井市)
- Year and Date
  2012-03-07
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures2012
- Author(s)
  Y.Nakano
- Organizer
  11th International Symposium on Advanced Technology
- Place of Presentation
  工学院大学(東京)
- Year and Date
  2012-10-31
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] AlGaN/GaNヘテロ構造のターンオン回復特性と欠陥準位の相関2012
- Author(s)
  中野由崇
- Organizer
  応用物理学会
- Place of Presentation
  愛媛大学 (松山)
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures2012
- Author(s)
  Yoshitaka Nakano
- Organizer
  11th International Symposium on Advanced Technology
- Place of Presentation
  工学院大学 (東京)
- Invited
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Steady-State Photo-capacitance Spectroscopy Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions2011
- Author(s)
  Yoshitaka Nakano
- Organizer
  Materials Research Society 2011 Fall Meeting
- Place of Presentation
  Hynes Convention Center (Boston, USA)
- Year and Date
  2011-12-01
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Photo-Capacitance Spectroscopy2011
- Author(s)
 Y.Nakano, Y.Irokawa, Y.Sumida, H.Kawai
- Organizer
 3^<rd> International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
 名古屋工業大学(愛知県)
- Year and Date
 2011-03-08
- Data Source
 KAKENHI-PROJECT-22560309
[Presentation] Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Photo-Capacitance Spectroscopy2011
- Author(s)
  Yoshitaka Nakano
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Scottish Exhibition and Conference Centre (Glasgow, UK)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero -Structures Probed by Photo-Capacitance Spectroscopy2011
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
- Organizer
  9th International Conference on Nitride Semiconductors
- Place of Presentation
  Scottish Exhibition and Conference Centre(Glasgow,UK).
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Current Collapses in AlGaN/GaN Hetero-structures Studied by Deep-level Optical Spectroscopy2010
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, H.Kawai
- Organizer
  Materials Research Society 2010 Fall Meeting
- Place of Presentation
  Hynes Convention Center (Boston, USA)
- Year and Date
  2010-11-30
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Band Gap States in AlGaN/GaN Hetero-Interface Probed by Deep-Level Optical Spectroscopy2009
- Author(s)
  Y.Nakano
- Organizer
  8th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  長野
- Year and Date
  2009-08-26
- Data Source
  KAKENHI-PROJECT-21760241
[Presentation] Damage Characteristics of n-GaNCrystal Etched with N2 Plasma by Soft X-ray Absorption Spectroscopy
- Author(s)
  Masahito Niibe, Takuya Kotaka, Retsuo Kawakami, Yoshitaka Nakano and Takashi Mukai
- Organizer
  7th International Symposium on Surface Science (ISSS-7)
- Place of Presentation
  Kunibikki Messe, Matsue, Japan
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Etching damage analysis of n-GaN crystals etched with N2-plasma using soft X-ray absorption spectroscopy
- Author(s)
  Masahito Niibe, Takuya Kotaka, Retsuo Kawakami, Yoshitaka Nakano and Takashi Mukai
- Organizer
  36th International Symposium on Dry Process (DSP2014)
- Place of Presentation
  PACIFICO Convention Plaza, Yokohama, Japan
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Ar+イオン照射したHVPE-GaN膜の電気的評価
- Author(s)
  中野由崇，中村圭二，新部正人，川上烈生
- Organizer
  第75回秋季応用物理学会学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Ar＋イオン照射したMOCVD-GaN:Si膜の電気的評価
- Author(s)
  中野由崇，高木健司，小川大輔，中村圭二，新部正人，川上烈生
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] C-t法によるAlGaN/GaNヘテロ構造のターンオン回復特性評価
- Author(s)
  中野由崇, 色川芳宏, 角谷正友, 八木修一, 河合弘治
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学 (北海道・札幌市)
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Ar+イオン照射したMOCVD-GaN:Si膜の電気的評価
- Author(s)
  中野由崇, 高木健司, 小川大輔, 中村圭二, 新部正人, 川上烈生
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学 (神奈川県・平塚市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Carbon-Related Deep-Level Defects and Carrier-Trapping Characteristics in AlGaN/GaN Hetero-Structures
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Shuichi Yagi, Hiroji Kawai
- Organizer
  7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015)
- Place of Presentation
  名古屋大学 (愛知県・名古屋市)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] CF4とArプラズマでエッチングしたAlGaN表面ダメージ
- Author(s)
  新部正人，川上烈生，中野由崇，向井孝志，白濱達夫，平井翔大
- Organizer
  第75回秋季応用物理学会学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Ｘ線吸収分光法を用いたTiO2薄膜のプラズマダメージ評価
- Author(s)
  佐野桂治，新部正人，川上烈生，中野由崇
- Organizer
  第28回日本放射光学会シンポジウム
- Place of Presentation
  立命館大学びわこ・くさつキャンパス（滋賀県草津市）
- Year and Date
  2015-01-10 – 2015-01-12
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Morphological and Compositional Changes in AlGaN Surfaces etched by RF Capacitively Coupled Carbon Tetrafluoride and Argon Plasmas
- Author(s)
  R. Kawakami, M. Niibe, Y. Nakano, T. Shirahama, S. Hirai and T. Mukai
- Organizer
  36th International Symposium on Dry Process (DSP2014)
- Place of Presentation
  PACIFICO Convention Plaza, Yokohama, Japan
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Spectral Recovery of Etching Damage of TiO2 thin film Observed in XAS Spectra
- Author(s)
  Keiji Sano, Masahito Niibe, Retsuo Kawakami, Yoshitaka Nakano
- Organizer
  7th International Symposium on Surface Science (ISSS-7)
- Place of Presentation
  Kunibiki Messe, Matsue, Japan
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] TiO2超微粒子の軟Ｘ線照射によるNEXAFSスペクトル形状の回復
- Author(s)
  新部正人，佐野桂治，川上烈生，中野由崇
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] AlGaN/GaNヘテロ構造における炭素関連の欠陥準位評価
- Author(s)
  中野由崇
- Organizer
  日本物理学会第24回格子欠陥フォーラム「パワーデバイス開発のための格子欠陥評価･制御」
- Place of Presentation
  かんぽの宿恵那 (岐阜県・恵那市)
- Year and Date
  2014-09-11 – 2014-09-12
- Invited
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Generation Behavior of Deep-Level Defects in Ar+-Irradiated GaN
- Author(s)
  Yoshitaka Nakano, Miao-Gen Chen, Daisuke Ogawa, Keiji Nakamura, Retsuo Kawakami, Masahito Niibe
- Organizer
  7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015)
- Place of Presentation
  名古屋大学 (愛知県・名古屋市)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] ArとCF4プラズマで処理したAlGaN膜の表面分析
- Author(s)
  平井翔大，新部正人，川上烈生，白濱達夫，中野由崇，向井孝志
- Organizer
  第28回日本放射光学会シンポジウム
- Place of Presentation
  立命館大学びわこ・くさつキャンパス（滋賀県草津市）
- Year and Date
  2015-01-10 – 2015-01-12
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Surface analysis of AlGaN treated by Ar and CF4 plasma etching
- Author(s)
  Shodai Hirai, Masahito Niibe, Retsuo Kawakami, Yoshitaka Nakano
- Organizer
  7th International Symposium on Surface Science (ISSS-7)
- Place of Presentation
  Kunibiki Messe, Matsue, Japan
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] CF4プラズマ処理したAlGaN/GaNヘテロ構造の電気的評価
- Author(s)
  中野由崇, 川上烈生, 新部正人, 高木健司, 白濱達夫, 向井孝志
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学 (神奈川県・平塚市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] CF4プラズマ処理したAlGaN/GaNヘテロ構造の電気的評価
- Author(s)
  中野由崇，川上烈生，新部正人，高木健司，白濱達夫，向井孝志
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26390066
[Presentation] Ar+イオン照射したHVPE-GaN膜の電気的評価
- Author(s)
  中野由崇, 中村圭二, 新部正人, 川上烈生
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学 (北海道・札幌)
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420300

1. IROKAWA Yoshihiro (90394832)

# of Collaborated Projects: 6 results

# of Collaborated Products: 18 results
2. SUMIYA Masatomo (20293607)

# of Collaborated Projects: 2 results

# of Collaborated Products: 7 results
3. Niibe Masahito (10271199)

# of Collaborated Projects: 2 results

# of Collaborated Products: 47 results
4. KAWAKAMI Retsuo (30314842)

# of Collaborated Projects: 2 results

# of Collaborated Products: 47 results
5. KAWAI Hiroji

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
6. KOTAKA Takuya

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
7. SANO Keiji

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
8. HIRAI Shodai

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
9. ARAKI Yuma

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
10. TANAKA Ryo

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results

Nakano Yoshitaka 中野 由崇

NAKANO Yoshitaka 中野 由崇

Research Projects

Research Products

Co-Researchers

次世代パワー半導体β-Ga2O3の固有欠陥準位の全容解明Principal Investigator

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Global Investigation of Electrical Damage Introduced into p-GaN Films by Plasma Ion BombardmentsPrincipal Investigator

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Correlation between deep-level defects and turn-on switching characteristics in AlGaN/GaN hetero-structures grown on Si substratesPrincipal Investigator

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Investigation on hydrogen interaction with nitride-based semiconductor metal/semiconductor interfaces

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Elucidation of UV irradiation effect in plasma etching process of wide gap semiconductors

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Correlation between deep-level defects and turn-on switching characteristics in AlGaN/GaN hetero-structuresPrincipal Investigator

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Hydrogen sensors using nitride-based semiconsuctor devices

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Band-gap states and quality analyses of AlGaN/GaN hetero-structuresPrincipal Investigator

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Research on nitride based semiconductor power devices

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[Book] GaNパワーデバイスの技術展開 第4章第2節「AlGaN/GaNヘテロ構造の欠陥準位評価」2012

Author(s)

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[Book] AlGaN/GaNヘテロ構造の欠陥準位評価2012

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Publisher

Data Source

[Journal Article] Photocatalytic Activity Enhancement of Anatase/Rutile‐Mixed Phase TiO2 Nanoparticles Annealed with Low‐Temperature O2 Plasma2021

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[Journal Article] Effects of air-based nonequilibrium atmospheric pressure plasma jet treatment on characteristics of polypropylene film surfaces2020

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NAID

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[Journal Article] Effects of nonequilibrium atmospheric-pressure O2 plasma-assisted annealing on anatase TiO2 nanoparticles2020

Author(s)

Nakano Yoshitaka 中野由崇

NAKANO Yoshitaka 中野由崇

[Book] GaNパワーデバイスの技術展開　第4章第2節「AlGaN/GaNヘテロ構造の欠陥準位評価」2012