UCHIDA Noriyuki 内田紀行

… Alternative Names

内田紀行ウチダノリユキ

Less

Researcher Number	60400636
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究グループ長
Affiliation (based on the past Project Information) *help	2020 – 2022: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究グループ長 2017: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 2015 – 2017: 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員 2016: 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員 2015 – 2016: 国立研究開発法人産業技術総合研究所, その他部局等, 研究員 … More 2013 – 2014: 独立行政法人産業技術総合研究所, その他部局等, 研究員 2013 – 2014: 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員 2011 – 2012: 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究員 2011: 独立行政法人産業技術総合研究所, ナノエレクトロ二クス研究部門, 研究員 2009 – 2010: National Institute of Advanced Industrial Science and Technology, ナノ電子デバイス研究センター, 研究員 2009: (独)産業技術総合研究所, ナノ電子デバイス研究センター, 特別研究員 2008: 独立行政法人産業技術総合研究所, ナノ電子デバイス研究センター, 特別研究員 2007: 産業技術総合研究所, 次世代半導体研究センター, 特別研究員 Less
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Electronic materials/Electric materials / Applied materials science/Crystal engineering Except Principal Investigator Physical properties of metals/Metal-base materials / Basic Section 28020:Nanostructural physics-related / Science and Engineering
Keywords	Principal Investigator ナノエレクトロニクス / 原子層シリサイド半導体 / クラスター凝集 / シリサイド / ショットキー障壁 / コンタクト抵抗 / 原子層薄膜 / 半導体シリサイド / 半導体ヘテロ接合 / 遷移金属内包シリコンクラスター … More / 半導体金属接合 / 2次元キャリア輸送特性 / シリサイド半導体 / 超薄膜 / エピタキシャル成長 / キャリアドーピング / ナシ材料 / 物性実験 / 表面・界面物性 / 半導体物性 / 半導体超微細化 / ナノ材料 … More Except Principal Investigator シリコン / クラスター / 磁性半導体 / 遷移金属内包シリコンクラスター / 磁性 / CVD / エピタキシャル成長 / シリサイド / 遷移金属 / スピン / 金属結合クラスター / コンプトン散乱 / 液体ボロン / 水素吸蔵 / Wood-Saxonポテンシャル / 共有結合 / 金属結合 / 分子軌道計算 / 熱電変換 / 電気伝導度 / 光吸収スペクトル / シリコンクラスター / レーザアブレーション / ナノ材料 / 原子分子処理 / 超薄膜 / ナノエレクトロニクス / 遷移金属内包Siクラスター Less

Formation of single-crystal Si spin glass with a single W atom as a magnetic dopant and elucidation of its magnetic properties
- Principal Investigator
  
  Okada Naoya
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 28020:Nanostructural physics-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Element technology for nanoelectronics devices using atomic layer silicide semiconductorPrincipal Investigator
- Principal Investigator
  
  Uchida Noriyuki
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Establish of Bonding Conversion in Isolated Cluster and Production of Boren
- Principal Investigator
  
  Kimura Kaoru
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Physical properties of metals/Metal-base materials
- Research Institution
  The University of Tokyo
Development of high-efficiency silicon-based thermoelectric materials by modulation doping and nanostructuring
- Principal Investigator
  
  Kurosaki Ken
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Physical properties of metals/Metal-base materials
- Research Institution
  Osaka University
Control of carrier doping using atomic layer silicide semiconductorsPrincipal Investigator
- Principal Investigator
  
  UCHIDA Noriyuki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Fabrication of atomic layer silicide semiconductor on Si substratesPrincipal Investigator
- Principal Investigator
  
  UCHIDA Noriyuki
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Advanced semiconducting devices using regulated nano-space materials
- Principal Investigator
  
  KANAYAMA Toshihiko (TOSHIHIKO Kanayama)
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 Other

All Journal Article Presentation Patent

[Journal Article] Thermal stability of amorphous Si-rich silicide films composed of W-atom-encapsulated Si clusters2017
- Author(s)
  Naoya Okada, Noriyuki Uchida, Toshihiko Kanayama
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 121 Issue: 22
- DOI
  10.1063/1.4985248
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K13368
[Journal Article] Thermoelectric Properties of (100) Oriented Silicon and Nickel Silicide Nanocomposite Films Grown on Si on Insulator and Si on Quartz Glass Substrates2016
- Author(s)
  Noriyuki Uchida*, Yuji Ohishi, Yoshinobu Miyazaki, Ken Kurosaki, Shinsuke Yamanaka, and Tetsuya Tada
- Journal Title
  
  MATERIALS TRANSACTIONS
  
  Volume: 57 Issue: 7 Pages: 1076-1081
- DOI
  10.2320/matertrans.E-M2016807
- NAID
  130005158388
- ISSN
  1345-9678, 1347-5320
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289220
[Journal Article] Synthesis and Characterization of Melt-Spun Metastable Al6Ge52015
- Author(s)
  Masaya Kumagai, Ken Kurosaki, Noriyuki Uchida, Yuji Ohishi, Hiroaki Muta, and Shinsuke Yamanaka
- Journal Title
  
  J. Electron. Mater.
  
  Volume: 44 Issue: 3 Pages: 948-952
- DOI
  10.1007/s11664-014-3592-5
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289220
[Journal Article] Electrical properties of amorphous and epitaxial Si-rich silicide films2015
- Author(s)
  N. Okada, N. Uchida, T. Kanayama
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 117 Issue: 9
- DOI
  10.1063/1.4913859
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-24656220
[Journal Article] ナノシリコン2014
- Author(s)
  大石佑治，宮崎吉宣，エクバル　ユスフ，牟田浩明，黒崎　健，山中伸介，石丸　学，内田紀行，多田哲也
- Journal Title
  
  工業材料
  
  Volume: 62 Pages: 39-42
- Data Source
  KAKENHI-PROJECT-25289220
[Journal Article] 遷移金属内包Siクラスター凝集による新規シリサイド半導体薄膜2014
- Author(s)
  内田紀行、岡田直也、金山敏彦
- Journal Title
  
  第23回シリサイド系半導体研究会講演予稿集
  
  Volume: 23 Pages: 12-18
- Data Source
  KAKENHI-PROJECT-24656220
[Journal Article] Fermi-level depinning and contact resistance reduction in metal/n-Ge junctions by insertion of W-encapsulating Si cluster films2014
- Author(s)
  Naoya Okada, Noriyuki Uchida, Toshihiko Kayanama
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 6
- DOI
  10.1063/1.4864321
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656220
[Journal Article] Heavily doped silicon and nickel silicide nanocrystal composite films with enhanced thermoelectric efficiency2013
- Author(s)
  Noriyuki Uchida, Tetsuya Tada, Yuji Ohishi, Yoshinobu Miyazaki, Ken Kurosaki, and Shinsuke Yamanaka
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 114 Issue: 13
- DOI
  10.1063/1.4823814
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289220
[Journal Article] Electronic properties of W-encapsulated Si cluster film on Si (100) substrates2012
- Author(s)
  Sunjin Park, Noriyuki Uchida, Toshihiko Kanayama
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 111 Issue: 6
- DOI
  10.1063/1.3695994
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Low-barrier heterojunction of epitaxial silicide composed of W encapsulating Si clusters with n-type Si2012
- Author(s)
  N. Okada, N. Uchida and T. Kanayama
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101 Issue: 21 Pages: 212103-212103
- DOI
  10.1063/1.4767136
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656220
[Journal Article] Low-barrier heterojunction of W-encapsulating Si cluster films on n-type Si2012
- Author(s)
  N. Uchida, N. Okada and T. Kanayama
- Journal Title
  
  Proceedings of The Sixth International Symposium on Advanced Science and Technology of Silicon Materials
  
  Volume: 1-1 Pages: 306-309
- Data Source
  KAKENHI-PROJECT-24656220
[Journal Article] Ab Initio Structure Characterization for the Amorphous Assembly of Si Clusters Encapsulating Transition Metal2011
- Author(s)
  T.Miyazaki, N.Uchida, T.Kanayama
- Journal Title
  
  Mater.Res.Soc.Symp.Proc.
  
  Volume: 1,321 Pages: 307-312
- DOI
  10.1557/opl.2011.811
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters2011
- Author(s)
  N.Uchida, T.Miyazaki, Y.Matsushita, K.Samaeshima, T.Kanayama
- Journal Title
  
  Mater.Res.Soc.Symp.Proc.
  
  Volume: 1,321 Pages: 361-366
- DOI
  10.1557/opl.2011.1250
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] New semiconducting silicides assembled from transition-metal-encapsulating Siclusters2011
- Author(s)
  N.Uchida, T.Miyazaki, Y.Matsushita, K.Sameshima, T.Kanayama
- Journal Title
  
  Thin Solid Films in press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760019
[Journal Article] New semiconducting silicides assembled from transition-metal-encapsulating Si clusters2011
- Author(s)
  N.Uchida, T.Miyazaki, Y.Matsushita, K.Samaeshima, T.Kanayama
- Journal Title
  
  Thin Solid Films
  
  Volume: 519 Issue: 24 Pages: 8456-8460
- DOI
  10.1016/j.tsf.2011.05.019
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] First principles structure modeling for amorphous Si-rich transition metal silicides2010
- Author(s)
  Takehide Miyazaki, Noriyuki Uchida, Toshihiko Kanayama
- Journal Title
  
  Phys. Status Solidi (c) 7
  
  Pages: 636-639
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] First principles structure modeling for amorphous Si-rich transition metal silicides2010
- Author(s)
  Takehide Miyazaki, Noriyuki Uchida, Toshihiko Kanayama
- Journal Title
  
  Phys.Status Solidi (c) 7
  
  Pages: 636-639
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Structure determination of W-capsulated Si cage clusters by x-ray absorption fine structure spectra2009
- Author(s)
  Zhihu Sun, Hiroyuki Oyanagi, Noriyuki Uchida, Takehide Miyazaki, Toshihiko Kanayama
- Journal Title
  
  Journal of Physics D: Applied Physics 42
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Structure determination of W-capsulated Si cage clusters by x-ray absorption fine structure spectra2009
- Author(s)
  Zhihu Sun, Hiroyuki Oyanagi, Noriyuki Uchida, Takehide Miyazaki, Toshihiko Kanayama
- Journal Title
  
  J. Phys D: Appl. Phys. 42
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2008
- Author(s)
  Noriyuki Uchida, Hiroshi Kintou, Yusuke Matsushita, Tetsuya Tada, Toshihiko Kanayama
- Journal Title
  
  pplied Physics Express (APEX) 1
- NAID
  10025083656
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Electric field effect in amorphous2008
- Author(s)
  Noriyuki Uchida, Takehide Miyazaki, Yusuke Matsushita, Kenichiro Samaeshima, Toshihiko Kanayama
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 1 Pages: 121502-121502
- DOI
  10.1143/apex.1.121502
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2008
- Author(s)
  Noriyuki Uchida, Hiroshi Kintou, Yusuke Matsushita, Tetsuya Tada, Toshihiko Kanayama
- Journal Title
  
  Applied Physics Express (APEX) 1
- NAID
  10025083656
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Local modification of electronic structure of Si(111)-7x7 surfaces by forming molybdenum-encapsulating Si clusters2007
- Author(s)
  N.Uchida, H.Yahata, T.Kanayama, and L.Bolotov
- Journal Title
  
  Applied Physics Letters 91
  
  Pages: 63109-63109
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Local modification of electronic st ructure of Si (111)-7x7 surfaces by forming molybdenum-encapsulating Si clusters2007
- Author(s)
  Noriyuki Uchida, Hiroshi. Yahata, To shihiko Kanayama, Leonid Bolotov
- Journal Title
  
  Applied Physics Letters 91
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] タングステンシリサイド膜と銅を積層した電極構造および配線構造2017
- Inventor(s)
  岡田直也、内田紀行、小川真一、金山敏彦
- Industrial Property Rights Holder
  岡田直也、内田紀行、小川真一、金山敏彦
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-216449
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-15K13368
[Patent] 半導体コンタクト構造及びその形成方法2014
- Inventor(s)
  内田紀行, 金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-503769
- Filing Date
  2014-08-26
- Acquisition Date
  2016-11-25
- Description
  日本移行
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 半導体コンタクト構造及びその形成方法2014
- Inventor(s)
  内田紀行, 金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-503769
- Filing Date
  2014-08-26
- Acquisition Date
  2016-11-25
- Description
  日本移行行
- Data Source
  KAKENHI-PROJECT-21760019
[Patent] 半導体コンタクト構造及びその形成方法2013
- Inventor(s)
  内田紀行, 金山敏彦, 岡田直也
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2013-02-25
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 半導体コンタクト構造及びその形成方法2013
- Inventor(s)
  内田紀行、岡田直也、金山敏彦
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2013-02-25
- Overseas
- Data Source
  KAKENHI-PROJECT-24656220
[Patent] THIN FILM OF METAL SILICON COMPOUND AND PROCESS FORPRODUCING THETHIN FILM OFMETAL SILICON COMPOUND2013
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Acquisition Date
  2013-01-28
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2013
- Inventor(s)
  内田紀行, 宮崎剛英, 金山敏彦
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Acquisition Date
  2013-02-15
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 半導体コンタクト構造及びその形成方法2013
- Inventor(s)
  内田紀行, 金山敏彦, 岡田直也
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2013-02-25
- Overseas
- Data Source
  KAKENHI-PROJECT-21760019
[Patent] 半導体コンタクト構造及びその形成方法2012
- Inventor(s)
  内田紀行、岡田直也、金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Number
  2012-049040
- Filing Date
  2012-03-06
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 半導体のコンタクト構造及び形成方法2012
- Inventor(s)
  内田紀行, 金山敏彦, 岡田直也
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2012-049040
- Filing Date
  2012-03-06
- Data Source
  KAKENHI-PROJECT-21760019
[Patent] 薄膜トランジスタ2011
- Inventor(s)
  内田紀行, 金山敏彦, 宮崎剛英
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Acquisition Date
  2011-01-14
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2011
- Inventor(s)
  内田紀行、金山敏彦、宮崎剛英
- Industrial Property Rights Holder
  産総研
- Acquisition Date
  2011-01-14
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2011
- Inventor(s)
  内田紀行, 金山敏彦, 宮崎剛英
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Acquisition Date
  2011-01-14
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] (旧名称)ナノ結晶凝集半導体材料及びその製造方法 (新名称)ナノ結晶半導体材料及びその製造方法2011
- Inventor(s)
  内田紀行, 金山敏彦
- Industrial Property Rights Holder
  国立研究開発法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2011-199630
- Filing Date
  2011-09-13
- Acquisition Date
  2015-05-29
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] ナノ結晶凝集半導体材料及びその製造方法2011
- Inventor(s)
  内田紀行、金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Number
  2011-199630
- Filing Date
  2011-09-13
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] ナノ結晶凝集半導体材料及びその製造方法2011
- Inventor(s)
  内田紀行, 金山敏彦
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2011-199630
- Filing Date
  2011-09-13
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] ナノ結晶凝集半導体材料及びその製造方法2010
- Inventor(s)
  内田紀行、金山敏彦
- Industrial Property Rights Holder
  産総研
- Industrial Property Number
  2010-207987
- Filing Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2010
- Inventor(s)
  内田紀行, 金山敏彦, 宮崎剛英
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2010-08-19
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2010
- Inventor(s)
  内田紀行、金山敏彦、宮崎剛英
- Industrial Property Rights Holder
  産総研
- Industrial Property Number
  2010-207987
- Filing Date
  2010-08-17
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] ナノ結晶凝集半導体材料及びその製造方法2010
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2010-207987
- Filing Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属硅化合物薄膜及其制造方法2010
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2010-08-25
- Acquisition Date
  2014-06-18
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2010
- Inventor(s)
  内田紀行, 宮崎剛英, 金山敏彦
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2010-253936
- Filing Date
  2010-11-12
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2010
- Inventor(s)
  内田紀行, 金山敏彦, 宮崎剛英
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2010-182188
- Filing Date
  2010-08-17
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2009-037261
- Filing Date
  2009-02-20
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2009-02-25
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2009-037261
- Filing Date
  2009-02-20
- Acquisition Date
  2014-01-31
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦、内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Filing Date
  2009-02-25
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2009
- Inventor(s)
  内田紀行、金山敏彦
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Number
  2009-191603
- Filing Date
  2009-08-21
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2009
- Inventor(s)
  内田紀行, 金山敏彦
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2009-191603
- Filing Date
  2009-08-21
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2009-02-25
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2009-02-25
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2009-02-25
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2008
- Inventor(s)
  金山敏彦、内田紀行
- Industrial Property Rights Holder
  産業技術総合研究所
- Filing Date
  2008-02-28
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2008
- Inventor(s)
  金山敏彦、内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Number
  2008-048520
- Filing Date
  2008-02-28
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2008
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2008-048520
- Filing Date
  2008-02-28
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2008
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Filing Date
  2008-02-28
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2008
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2008-230650
- Filing Date
  2008-09-09
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] クラスター気相合成法で形成したWSin (n=12)挿入膜のCu拡散防止特性2018
- Author(s)
  岡田直也、内田紀行、小川真一、金山敏彦
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K13368
[Presentation] W内包Siクラスター凝集薄膜を用いた金属/Si接合の障壁高さ制御2017
- Author(s)
  岡田直也、内田紀行、金山敏彦
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県横浜市パシフィコ横浜
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PROJECT-15K13368
[Presentation] Wを内包したSiクラスターを凝集したシリサイド薄膜の電気伝導特性2015
- Author(s)
  岡田直也、内田紀行、金山敏彦
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-24656220
[Presentation] WSin/Ge接合の結合状態とフェルミレベルピニング解除2014
- Author(s)
  内田紀行、岡田直也、福田浩一、宮崎剛英、金山敏彦
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-24656220
[Presentation] Wを内包したSiクラスターを凝集した原子層厚シリサイド薄膜の電気伝導特性2014
- Author(s)
  岡田直也、内田紀行、金山敏彦
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-24656220
[Presentation] Low-barrier heterojunction of W-encapsulating Si cluster films on n-type Si2012
- Author(s)
  N. Uchida, N. Okada and T. Kanayama
- Organizer
  The Sixth International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  米国、ハワイ州、コナ
- Data Source
  KAKENHI-PROJECT-24656220
[Presentation] 遷移金属内包Siクラスター薄膜の電気伝導特性2012
- Author(s)
  岡田直也、内田紀行、金山敏彦
- Organizer
  第59回応用物理学関連学術講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスターを単位構造としたシリサイド半導体とSiとの接合特性2012
- Author(s)
  岡田直也、内田紀行、金山敏彦
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛県松山市愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-24656220
[Presentation] Low-barrier hetero junction to n-type Silicon using novel ultrathin Silicide consisted of Tungsten-encapsulating Silicon clusters2012
- Author(s)
  N. Okada, N. Uchida, and T. Kanayama
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  Kyoto International Conference Center, Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24656220
[Presentation] Si・シリサイドナノ結晶コンポジット半導体膜の熱伝導率2012
- Author(s)
  内田紀行、大石祐治、黒崎健、山中伸介、多田哲也、金山敏彦
- Organizer
  第59回応用物理学関連学術講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Electric Conduction Mechanism of Amorphous Semiconductor Films Assembled from Transition-Metal-Encapsulating Silicon Clusters2011
- Author(s)
  N.Okada, N.Uchida, T.Kanayama
- Organizer
  International Conference of New Science Created by Materials with Nano Spaces : From Fundamentals to Applications
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2011-11-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Interfacial structure analysis of W-encapsulated Si cluster film on Si (100) substrates2011
- Author(s)
  S.J.Park, N.Uchida, T.Tada, T.Kanayama
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-09-14
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Ab Initio Molecular Dynamics Study for Vibrations in the Assembly of Transition-Metal-Encapsulating Si Clusters2011
- Author(s)
  T.Miyazaki, N.Uchida, T.Kanayama
- Organizer
  International Conference of New Science Created by Materials with Nano Spaces : From Fundamentals to Applications
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2011-11-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters2011
- Author(s)
  Noriyuki Uchida, Takehide Miyazaki, Yusuke Matsushita, Kenichiro Samaeshima, Toshihiko Kanayama
- Organizer
  2011 MRS Spring Meeting and Exhibit
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters2011
- Author(s)
  N.Uchida, T.Miyazaki, Y.Matsushita, K.Samaeshima, T.Kanayama
- Organizer
  2011 MRS Spring Meeting and Exhibit
- Place of Presentation
  San Francisco Marriott Marquis (San Francisco, CA, USA.)
- Year and Date
  2011-04-28
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスターが凝集したアモルファス材料の電子構造解析遷移金属内包Siクラスター凝集膜の構造解析2011
- Author(s)
  宮崎剛英、内田紀行、金山敏彦
- Organizer
  日本物理学会第66回年次大会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Ab Initio Structure Characterization for the Amorphous Assembly of Si Clusters Encapsulating Transition Metal2011
- Author(s)
  T.Miyazaki, N.Uchida, T.Kanayama
- Organizer
  2011 MRS Spring Meeting and Exhibit
- Place of Presentation
  San Francisco Marriott Marquis (San Francisco, CA, USA.)
- Year and Date
  2011-04-27
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Electronic properties of W-encapsulated Si cluster film on Si (100) substrates2011
- Author(s)
  N.Uchida, S.J.Park, T.Tada, T.Kanayama
- Organizer
  International Conference of New Science Created by Materials with Nano Spaces : From Fundamentals to Applications
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2011-11-24
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Electric Conduction Mechanism of Amorphous Semiconductor Films Assembled from Transition-Metal-Encapsulating Silicon Clusters2011
- Author(s)
  N.Okada, N.Uchida, T.Kanayama
- Organizer
  International Symposium on Clusters and Nanostructures
- Place of Presentation
  Jefferson Hotel, Richmond (Virginia, USA)
- Year and Date
  2011-11-07
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] New Semiconducting Silicides Assembled from Transition-Metal-Encapsulating Si Custers, Asia-Pacific Conference on Semiconducting Silicides2010
- Author(s)
  Toshihiko Kanayama, Noriyuki Uchida, and, Takehide Miyazaki
- Organizer
  Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010)
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスター凝集膜の構造解析2010
- Author(s)
  内田紀行、宮崎剛英、鮫島健一郎、松下祐介、金山敏彦、村上浩一
- Organizer
  日本物理学会第65回年次大会
- Place of Presentation
  岡山市,岡山大学
- Year and Date
  2010-03-22
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] New Semiconducting Silicides Assembled from Transition-Metal-Encapsulating Si Custer2010
- Author(s)
  Toshihiko Kanayama, Noriyuki Uchida, Takehide Miyazaki
- Organizer
  Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010)
- Place of Presentation
  茨城県つくば市
- Year and Date
  2010-07-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包シリコンクラスターが凝集したアモルファス材料の振動計算2010
- Author(s)
  宮崎剛英、内田紀行、金山敏彦
- Organizer
  日本物理学会2010年秋季大会
- Place of Presentation
  大阪府立大学(大阪府堺市)
- Year and Date
  2010-09-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスター半導体薄膜の合成と電気伝導特性評価2009
- Author(s)
  松下裕介, 内田紀行, 金藤浩史, 金山敏彦
- Organizer
  第56回応用物理学関係連合学術講演会
- Place of Presentation
  茨城県つくば市筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Amorphous Si-Rich Silicide Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2009
- Author(s)
  Noriyuki Uchida, Takehide Miyazaki, Toshihiko Kanayama
- Organizer
  The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  Utrecht, The Netherlands
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] First principles structure modeling for amorphous Si-rich transition metal silicides2009
- Author(s)
  Takehide Miyazaki, Noriyuki Uchida, Toshihiko Kanayama
- Organizer
  The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  Utrecht, The Netherlands
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] First principles structure modeling for amorphous Si-rich transition metal silicides2009
- Author(s)
  Takehide Miyazaki, Noriyuki Uchida, Toshihiko Kanayama
- Organizer
  The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  オランダ,ユトレヒト
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Synthesis of Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2009
- Author(s)
  Noriyuki Uchida, Yusuke Matsushita, Hiroshi Kintou, Tetsuya Tada, Toshihiko Kanayama
- Organizer
  International Conference on Nanoscience and Quantum Physics (nanoPHYS'09)
- Place of Presentation
  Minato-ku, Tokyo, Japan
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] シリコンリッチなアモルファス遷移金属シリサイドの構造と電子状態2009
- Author(s)
  宮崎剛英、内田紀行、金山敏彦
- Organizer
  日本物理学会2009年秋季大会
- Place of Presentation
  熊本市,熊本大学
- Year and Date
  2009-09-27
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスター半導体薄膜の合成と電界効果測定2009
- Author(s)
  松下祐介、内田紀行、金山敏彦
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市,富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Amorphous Si-Rich Silicide Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2009
- Author(s)
  Noriyuki Uchida, TakehideMiyazaki, Toshihiko Kanayama
- Organizer
  The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  オランダ,ユトレヒト
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Structure determination of W-capsulated Si cage clusters by x-ray absorption fine structure spectra2009
- Author(s)
  Z. Sun, H. Oyanagi, N. Uchida, T. Miyazaki, T. Kanayama
- Organizer
  第22回日本放射光学会年会
- Place of Presentation
  東京都文京区東京大学本郷キャンパス
- Year and Date
  2009-01-10
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Structure of WSin cage clusters probed by x-ray absorption fine structure spectra2009
- Author(s)
  H. Oyanagi, Z. Sun, N. Uchida, T. Miyazaki, T. Kanayama
- Organizer
  第22回日本放射光学会年会・放射光科学合同シンボジウム
- Place of Presentation
  東京都文京区東京大学本郷キャンパス
- Year and Date
  2009-01-12
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Structure of WSin cage clusters probed by x-ray absorption fine structurespectra2009
- Author(s)
  H. Oyanagi, Z. Sun, N. Uchida, T. Miyazaki, T. Kanayama
- Organizer
  PFシンポジウム
- Place of Presentation
  茨城県つくば市つくば国際会議場
- Year and Date
  2009-03-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Synthesis of Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2009
- Author(s)
  N. Uchida, H. Kintou, Y. Matsushita, T. Tada, T. Kanayama
- Organizer
  International Conference on Nanoscience and Quantum Physics (nanoPHYS'09)
- Place of Presentation
  東京都港区
- Year and Date
  2009-02-24
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] MoSi_nクラスター膜の熱処理に伴う構造変化2009
- Author(s)
  鮫島健一郎、内田紀行、松下裕介、村上浩一、兵藤宏、木村薫、金山敏彦
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市,富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Synthesis and Characterization of Clusters Assembled Films Composed of Transition-Metal Encapsulating Si Clusters"2008
- Author(s)
  Noriyuki Uchida, Hiroshi Kintou, Yusuke Matsushita, Tetsuya Tada, Kazuhiho Kirihara, Hiroyuki Oyanagi, Toshihiko Kanayama
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  Tsukuba, Ibaraki, Japan
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包シリコンクラスター薄膜の合成と電気伝導特性評価2008
- Author(s)
  内田紀行, 金藤浩史, 桐原和大, 大柳宏之, 金山敏彦
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学 (千葉県船橋市)
- Year and Date
  2008-03-30
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Theoretical Study of Single Gicfphene-1 ike Semiconductor Layer Made of Si and Transition Metal Atoms2008
- Author(s)
  T. Miyazaki, N. Uchida, T. Kanayama
- Organizer
  Materials Research Society (MRS) 2008 Fall Meeting
- Place of Presentation
  Boston USA
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Formation of Si6 ring clusters stabilized by a transition metal atom2008
- Author(s)
  Noriyuki Uchida, Yusuke Matsushita, Takehide Miyazaki, Hidefumi Hiura, Toshihiko Kanayama
- Organizer
  14th International Symposium on Small Particles and Inorganic Clusters
- Place of Presentation
  Valladolid, Spain
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスター薄膜のラマン散乱測定2008
- Author(s)
  金藤浩史, 松下祐介, 内田紀行, 多田哲也, 金山敏彦, 村上浩一
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市中部大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包シンコンクラスター薄膜の合成と構造評価2008
- Author(s)
  内田紀行, 金藤浩史, 金山敏彦, 桐原和大, 大柳宏之, 木村薫
- Organizer
  日本物理学会第63回年次大会
- Place of Presentation
  近畿大学 (大阪府東大阪市)
- Year and Date
  2008-03-26
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Formation of Si_6 rins clusters stabilized hv a transition metal atom2008
- Author(s)
  N. Uchida, Y. Matsushita, T. Miyazaki, H. Hiura, T. Kanayama
- Organizer
  14^<th> International Symposium on Small Particles and Inorganic Clusters (ISSPIS14)
- Place of Presentation
  Valladolid, Spain
- Year and Date
  2008-09-17
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属で安定化したグラフェンシート状単一シリコン原子層の構造モデル2008
- Author(s)
  宮崎剛英, 内田紀行, 金山敏彦
- Organizer
  2008年日本物理学会秋季大会
- Place of Presentation
  岩手県盛岡市岩手大学
- Year and Date
  2008-09-21
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Synthesis and Characterization of Clusters Assembled Films Composed of Transition-Metal Encapsulating Si Clusters2008
- Author(s)
  N. Uchida, H. Kintou, Y. Matsushita, T. Tada, K. Kirihara, H. Oyanagi, T. Kanayama,
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  茨城県つくば市つくば国際会議場
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスター凝集による新規シリサイド半導体薄膜
- Author(s)
  内田紀行、岡田直也、金山敏彦
- Organizer
  第23回シリサイド系半導体研究会講演予稿集
- Place of Presentation
  筑波大学東京キャンパス文京校舎
- Invited
- Data Source
  KAKENHI-PROJECT-24656220
[Presentation] Synthesis and Characterization of Clusters Assembled Films Composed of Transition-Metal Encapsulating Si Clusters
- Author(s)
  Noriyuki Uchida, Hiroshi Kintou, Yusuke Matsushita, Tetsuya Tada, Kazuhiho Kirihara, Hiroyuki Oyanagi, Toshihiko Kanayama
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  Tsukuba, Ibaraki
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] タングステン内包Siクラスター薄膜を用いたGeとの金属接合技術の開発
- Author(s)
  岡田直也、内田紀行、金山敏彦
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-24656220

1. TADA Tetsuya (40188248)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
2. KANAYAMA Toshihiko (70356799)

# of Collaborated Projects: 1 results

# of Collaborated Products: 51 results
3. MIYAZAKI Takehide (10212242)

# of Collaborated Projects: 1 results

# of Collaborated Products: 29 results
4. Kurosaki Ken (90304021)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
5. Kimura Kaoru (30169924)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. Okada Naoya (10717234)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 石丸学 (00264086)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
8. 宮崎吉宣 (30610844)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. YAMAMURA HITOSHI

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. YAMAZAKI SHOHEI

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

UCHIDA Noriyuki 内田 紀行

内田 紀行 ウチダ ノリユキ

Research Projects

Research Products

Co-Researchers

Formation of single-crystal Si spin glass with a single W atom as a magnetic dopant and elucidation of its magnetic properties

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Element technology for nanoelectronics devices using atomic layer silicide semiconductorPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Establish of Bonding Conversion in Isolated Cluster and Production of Boren

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of high-efficiency silicon-based thermoelectric materials by modulation doping and nanostructuring

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Control of carrier doping using atomic layer silicide semiconductorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of atomic layer silicide semiconductor on Si substratesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Advanced semiconducting devices using regulated nano-space materials

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Thermal stability of amorphous Si-rich silicide films composed of W-atom-encapsulated Si clusters2017

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Thermoelectric Properties of (100) Oriented Silicon and Nickel Silicide Nanocomposite Films Grown on Si on Insulator and Si on Quartz Glass Substrates2016

Author(s)

Journal Title

DOI

NAID

ISSN

Language

Data Source

[Journal Article] Synthesis and Characterization of Melt-Spun Metastable Al6Ge52015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Electrical properties of amorphous and epitaxial Si-rich silicide films2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] ナノシリコン2014

Author(s)

Journal Title

Data Source

[Journal Article] 遷移金属内包Siクラスター凝集による新規シリサイド半導体薄膜2014

Author(s)

Journal Title

Data Source

[Journal Article] Fermi-level depinning and contact resistance reduction in metal/n-Ge junctions by insertion of W-encapsulating Si cluster films2014

Author(s)

UCHIDA Noriyuki 内田紀行

内田紀行ウチダノリユキ