CHENG Weitao 程うぇい涛

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程い涛テイイトウ

程〓涛テイイトウ

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Researcher Number	60431540
Affiliation (based on the past Project Information) *help	2008: Tohoku University, 未来科学技術共同研究センター, 助教授 2007 – 2008: Tohoku University, 未来科学技術共同研究センター, 助教
Review Section/Research Field	Principal Investigator 電力工学・電気機器工学
Keywords	Principal Investigator 平坦化 / コーナー丸め効果 / 3次元構造 / 電界効果ドリフト層 / パワーデバイス

Research Projects
(1 results)
Research Products
(38 results)

A Study on New Three-Dimensional Ultra High-Speed and Low-Loss Power Devices with Electric Field Effect Drift LayerPrincipal Investigator
- Principal Investigator
  
  CHENG Weitao
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  電力工学・電気機器工学
- Research Institution
  Tohoku University

All 2009 2008 2007

All Journal Article Presentation

[Journal Article] A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits2009
- Author(s)
  Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 48
- NAID
  210000066558
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers2009
- Author(s)
  Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, Tadahiro Ohmi
- Journal Title
  
  Journal of Vacuum Science & Technology B Vol.27, No.1
  
  Pages: 394-401
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] Experimental Demonstration and Analysis of High Performance and Low 1/f Noise Tri-gate MOSFETs by Optimizing Device Structure2009
- Author(s)
  Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi
- Journal Title
  
  Microelectronic Engineering (to be published on June 2009)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] Experimental Demonstration and Analysis of High Performance and Low 1 / f Noise Tri-gate MOSFETs by Optimizing Device Structure2009
- Author(s)
  Weitao Cheng
- Journal Title
  
  Microelectronic Engineering 6(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator2009
- Author(s)
  Weitao Cheng
- Journal Title
  
  Electrochemical Society Transactions 5(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si (110) Using Accumulation Mode Device Structure for RF Analon Circuits2009
- Author(s)
  Weitao Cheng
- Journal Title
  
  Japanese Journal of Applied Physics 4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator2009
- Author(s)
  WEITAO CHENG, AKINOBU TERAMOTO, TADAHIRO OHMI
- Journal Title
  
  Electrochemical Society Transactions (to be published on May 2009)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007
- Author(s)
  W. Cheng, A. Teramoto, T. Ohmi
- Journal Title
  
  Electrochemical Society Transactions Vol.11 No.6 ULSI Process Integration 5
  
  Pages: 349-354
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007
- Author(s)
  Weitao Cheng
- Journal Title
  
  Microelectronic Engineering 84
  
  Pages: 2105-2108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007
- Author(s)
  Weitao Cheng
- Journal Title
  
  Electrochemical Society Transactions 11
  
  Pages: 349-354
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage2007
- Author(s)
  R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, T. Ohmi
- Journal Title
  
  ECS Transactions Vol.6 No.4 Silicon-on-Insulator Technology and Devices 13
  
  Pages: 113-118
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007
- Author(s)
  W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T.Ohmi
- Journal Title
  
  Microelectronic Engineering Vol.84/9-10
  
  Pages: 2105-2108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface2007
- Author(s)
  W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
- Journal Title
  
  ECS Transactions Vol.6 No.4 Silicon-on-Insulator Technology and Devices 13
  
  Pages: 101-106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface2007
- Author(s)
  Weitao Cheng
- Journal Title
  
  Electrochemical Society Transactions 6
  
  Pages: 101-106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces2008
- Author(s)
  W. Cheng, A. Teramoto and T. Ohmi
- Organizer
  PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society, Meeting Abstracts,Abs.1868 CD-ROM
- Place of Presentation
  Honolulu, Hawaii
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si (100) and (110) Surfaces2008
- Author(s)
  Weitao Cheng
- Organizer
  PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface2008
- Author(s)
  W. Cheng, A. Teramoto, T. Ohmi
- Organizer
  2008 IEEE 39th Annual Power Electronics Specialists Conference, pp.3854-3856
- Place of Presentation
  Rhodes
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Impact of New Approach to Improve RF Power FETs Performance on Si (110) Surface2008
- Author(s)
  W. Cheng, A. Teramoto, T. Ohmi
- Organizer
  213th Meeting of The Electrochemical Society, No.659, CD-ROM
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Impact of Fully Depleted Silicon-On-Insulator Accumulation-mode CMOS on Si (110)2008
- Author(s)
  Ching Foa Tye, Weitao Cheng, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
- Organizer
  IEICE Technical Report SDM 2008-149~168, SDM-164, pp.51-55
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Impact of New Approach to Improve RF Power FETs Performance on Si (110) Surface2008
- Author(s)
  Weitao Cheng
- Organizer
  213th Meeting of The Electrochemical Societ Y
- Place of Presentation
  Phoenix, USA
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits2008
- Author(s)
  Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
- Organizer
  Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.876-877
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs2008
- Author(s)
  Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Weitao Cheng, Syunichi Watabe, Ching Foa Tye, Shigetoshi Sugawa, Tadahiro Ohmi
- Organizer
  2008 IEEE International Conference on Microelectronic Test Structures, pp.155-159
- Place of Presentation
  Edinburgh
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon oriented wafers2008
- Author(s)
  P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, and T. Ohmi
- Organizer
  15th Workshop on Dielectrics in Microelectronics, pp151-152
- Place of Presentation
  Berlin
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface2008
- Author(s)
  Weitao Cheng
- Organizer
  IEEE 39^<th> Annual Power Electronics Specialis is Conference
- Place of Presentation
  Rhodes, Greece
- Year and Date
  2008-06-18
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Impact of Performance and Reliability Boosters in Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications2008
- Author(s)
  Weitao Cheng, Akinobu Teramoto, Rihito Kuroda, ChingFoa Tye, Syuichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi
- Organizer
  29th International Conference on the Physics of Semiconductors (ICPS 2008), pp602-603
- Place of Presentation
  Brazil
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si (110) Using Accumulation Mode Device Structure for RF Analog Circuits2008
- Author(s)
  Weitao Cheng
- Organizer
  2008 International Conference on SOLID STATE DEVICES AND MATERIALS
- Place of Presentation
  つくば
- Year and Date
  2008-09-26
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Impact of Performance and Reliability Boosters in Novel FD-S0I CMOS Devices on Si(110) Surface for Analog Applications2008
- Author(s)
  Weitao Cheng
- Organizer
  29^<th> International Conference on the Physics of Semiconductors
- Place of Presentation
  Brazil Rio de Vaneiro
- Year and Date
  2008-07-29
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007
- Author(s)
  Weitao Cheng
- Organizer
  212th Meeting of The Electrochemical Society
- Place of Presentation
  Washington D.C.(アメリカ)
- Year and Date
  2007-10-10
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] High Performance Accumulation Mode FD-SOI MOSFETs on Si (100) and (110) Surfaces2007
- Author(s)
  Weitao Cheng
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  Sendai
- Year and Date
  2007-10-05
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007
- Author(s)
  W. Cheng, A. Teramoto, T. Ohmi
- Organizer
  212th Meeting of The Electrochemical Society, No.1309, CD-ROM
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] High Performance Accumulation Mode FD-SOI MOSFETs on Si(100) and (110)Surfaces2007
- Author(s)
  W. Cheng, A. Teramoto, R. Kuroda, C. Tye, T. Suwa, T Goto, F Imaizumi, S, Sugawa, T. Ohmi
- Organizer
  IEICE Technical Report SDM 2007-187, pp.45-48
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage2007
- Author(s)
  Rihito Kuroda, Akinobu Teramoto, Weitao Cheng, Shigetoshi Sugawa, Tadahiro Ohmi
- Organizer
  211th Meeting of The Electrochemical Society, No.719, CD-ROM
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface2007
- Author(s)
  W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
- Organizer
  211th Meeting of The Electrochemical Society, No.717, CD-ROM
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations2007
- Author(s)
  Rihito Kuroda, Akinobu Teramoto, Cheng Weitao, Shigetoshi Sugawa, Tadahiro Ohmi
- Organizer
  2007 IEEE International SOI Conference, pp.55-56
- Place of Presentation
  Indian Wells, CA.
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface2007
- Author(s)
  Weitao Cheng
- Organizer
  211th Meeting of The Electrochemical Society
- Place of Presentation
  Chicago(アメリカ)
- Year and Date
  2007-05-08
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] Impact of the channel direction on the 1/f noise in SOI - MOSFETs fabricated on (100) and (110) silicon oriented wafers2007
- Author(s)
  P. Gaubert, W. Cheng, A. Teramoto, T. Ohmi
- Organizer
  AIP Conference Proceedings 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007, pp.43-46
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007
- Author(s)
  Weitao Cheng
- Organizer
  15th Biennial Conference on Insulating Films on Semiconductors
- Place of Presentation
  Athens(ギリシャ)
- Year and Date
  2007-06-20
- Data Source
  KAKENHI-PROJECT-19686019
[Presentation] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007
- Author(s)
  W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T.Ohmi
- Organizer
  Infos2007 Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, pp.2105-2108
- Data Source
  KAKENHI-PROJECT-19686019

CHENG Weitao 程 うぇい涛

程 い涛 テイ イトウ

程 〓涛 テイ イトウ

Research Projects

Research Products

A Study on New Three-Dimensional Ultra High-Speed and Low-Loss Power Devices with Electric Field Effect Drift LayerPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits2009

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers2009

Author(s)

Journal Title

Data Source

[Journal Article] Experimental Demonstration and Analysis of High Performance and Low 1/f Noise Tri-gate MOSFETs by Optimizing Device Structure2009

Author(s)

Journal Title

Data Source

[Journal Article] Experimental Demonstration and Analysis of High Performance and Low 1 / f Noise Tri-gate MOSFETs by Optimizing Device Structure2009

Author(s)

Journal Title

Data Source

[Journal Article] Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator2009

Author(s)

Journal Title

Data Source

[Journal Article] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si (110) Using Accumulation Mode Device Structure for RF Analon Circuits2009

Author(s)

Journal Title

Data Source

[Journal Article] Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator2009

Author(s)

Journal Title

Data Source

[Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007

Author(s)

Journal Title

Data Source

[Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007

Author(s)

Journal Title

Data Source

[Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007

Author(s)

Journal Title

Data Source

[Journal Article] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage2007

Author(s)

Journal Title

Data Source

[Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007

Author(s)

Journal Title

Data Source

[Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface2007

Author(s)

Journal Title

Data Source

[Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface2007

Author(s)

Journal Title

Data Source

[Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces2008

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si (100) and (110) Surfaces2008

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface2008

CHENG Weitao 程うぇい涛

程い涛テイイトウ

程〓涛テイイトウ