AKIYAMA Yoshihiro 秋山芳広

Researcher Number	60469773
Affiliation (based on the past Project Information) *help	2017: 豊田工業大学, 工学(系)研究科(研究院), 研究補助者 2016: 豊田工業大学, 工学研究科, 研究員 2011 – 2015: 豊田工業大学, 工学(系)研究科(研究院), 研究補助者 2013: 豊田工業大学, 大学院・工学研究科, 研究補助者 2009 – 2010: 豊田工業大学, 工学部, PD研究員
Review Section/Research Field	Except Principal Investigator Electron device/Electronic equipment / Electronic materials/Electric materials
Keywords	Except Principal Investigator 量子ドット / 光検出器 / 電界効果トランジスタ / 量子デバイス / スピンデバイス / 量子ナノ構造 / 量子細線 / 1次元電子 / 光伝導 / 三角障壁 … More

Piezoelectric effects in GaN-based HEMTs and related devices and a new method
- Principal Investigator
  
  Sakaki Hiroyuki
- Project Period (FY)
  2014 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Toyota Technological Institute
Photogalvanic effects in semiconductor quantum structure
- Principal Investigator
  
  Kawazu Takuya
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science
Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications
- Principal Investigator
  
  SAKAKI Hiroyuki
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyota Technological Institute
New ways of forming combined quantum wire/dot structures and investigation of their photoconductive functions
- Principal Investigator
  
  SAKAKI Hiroyuki
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyota Technological Institute

All 2012 2011 2010 2009 2008 Other

All Journal Article Presentation

[Journal Article] Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs2011
- Author(s)
  T.Kawazu, et al
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 99
- DOI
  10.1063/1.3665394
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360133, KAKENHI-PROJECT-23360164
[Journal Article] Self-assembled growth of GaSb type- II nanorods aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs2011
- Author(s)
  T. Kawazu, Y. Akiyama, H. Sakaki
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 335, 1 Pages: 1-3
- DOI
  10.1016/j.jcrysgro.2011.09.016
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360164
[Journal Article] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal(111)B GaAs2010
- Author(s)
  Y.Akiyama
- Journal Title
  
  AIP Conf.Proc. Vol.1199
  
  Pages: 265-266
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs2010
- Author(s)
  Y.Akiyama, T.Kawazu, T.Noda, H.Sakaki
- Journal Title
  
  AIP Conf.Proc Vol.1199
  
  Pages: 265-266
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] 微傾斜GaAs(111)B 基板上のGaSb タイプII ナノロッドの自己形成2012
- Author(s)
  川津琢也, 秋山芳広, 野田武司, 間野高明, 佐久間芳樹, 榊裕之
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] 自己形成InGaAsドット列における異方的な持続性光電流2010
- Author(s)
  秋山芳広、川津琢也, 野田武司, 榊裕之
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] 自己形成InGaAsドット列における異方的な持続性光電流2010
- Author(s)
  秋山芳広
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] GaSb量子ドット入りGaAsFET素子の光照射効果:過渡応答2010
- Author(s)
  伊賀健一郎, 山附太香史, 大森雅登, 秋山芳広, 榊裕之
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] 微傾斜(111)B面上のInGaAs結合ドット列を介する異方的電子伝導の温度依存性2009
- Author(s)
  秋山芳広, 川津琢也, 野田武司, 榊裕之
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] 微傾斜(111)B面上のInGaAs結合ドット列を介する異方的電子伝導の温度依存性2009
- Author(s)
  秋山芳広
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs2008
- Author(s)
  秋山芳広, 川津琢也, 野田武司, 榊裕之
- Organizer
  29th International Conference on the Physics of Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2008-07-29
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (lll)B GaAs2008
- Author(s)
  Yoshihiro Akiyama
- Organizer
  29th International Conference on the Physics of Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2008-07-29
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] AlGaN/GaN HEMTにおける界面凹凸散乱と合金散乱の大小関係
- Author(s)
  秋山芳広、丹羽亮介、榊裕之
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス　(札幌市北区）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26289095
[Presentation] AlGaN/GaN HFETのドレイン電流とゲート電流への紫外光照射効果
- Author(s)
  村山裕明、坂下大樹、丹羽亮介、秋山芳広、加地徹、杉本雅裕、榊裕之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Interface roughness scattering at AlGaN/GaN heterojunctions
- Author(s)
  R. Niwa, Y. Akiyama, H. Murayama, H. Sakashita, T. Kawazu,T. Kachi, M. Sugimoto, H. Sakaki
- Organizer
  International Workshop on Nitride Semiconductors 2012（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] MOSダイオードのC-V特性への光照射効果
- Author(s)
  西浦啓祥、秋山芳広、榊裕之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] 微傾斜GaAs(111)B基板上のGaSbタイプIIナノロッドの自己形成
- Author(s)
  川津琢也、秋山芳広、野田武司、間野高明、佐久間芳樹、榊裕之
- Organizer
  2012年春季　第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] AlGaN/GaN HEMTにおける界面凹凸散乱
- Author(s)
  丹羽亮介、秋山芳広、村山裕明、坂下大樹、川津琢也、加地徹、杉本雅裕、榊裕之
- Organizer
  2012年秋季　第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Ptゲート付きAlGaN/GaN構造における持続的な水素ガスセンシング
- Author(s)
  秋山芳広、岩形真司、丹羽亮介、坂下大樹、加地徹、杉本雅裕、榊裕之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Possible origins of persistent photoconductivity in AlGaN/GaN HEMTs studied by gate-controlled Hall measurements
- Author(s)
  Y. Akiyama, H. Murayama, R. Niwa, H. Sakaki
- Organizer
  10th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  Hakodate, Japan
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] AlGaN/GaNヘテロ接合におけるピエゾ効果と荷電表面準位
- Author(s)
  保木井美和、秋山芳広、大森雅登、榊裕之
- Organizer
  2013年春季　第60回応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer
- Author(s)
  Y. Akiyama, H. Murayama, R. Niwa, H. Sakashita, H. Sakaki, T. Kachi, M. Sugimoto
- Organizer
  31st　International Conference on the Physics of Semiconductors (ICPS2012)
- Place of Presentation
  Zurich, Switzerland
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] AlGaN/GaN HEMTの光応答：多波長照射効果
- Author(s)
  秋山芳広、村山裕明、丹羽亮介、坂下大樹、加地徹、杉本雅裕、榊裕之
- Organizer
  2012年秋季　第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23360164

1. OHMORI Masato (70454444)

# of Collaborated Projects: 4 results

# of Collaborated Products: 2 results
2. VITUSHINSKIY Pavel (30545330)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
3. SAKAKI Hiroyuki (90013226)

# of Collaborated Projects: 3 results

# of Collaborated Products: 19 results
4. KAWAZU Takuya (00444076)

# of Collaborated Projects: 3 results

# of Collaborated Products: 10 results
5. NODA Takeshi (90251462)

# of Collaborated Projects: 2 results

# of Collaborated Products: 7 results

AKIYAMA Yoshihiro 秋山 芳広

Research Projects

Research Products

Co-Researchers

Piezoelectric effects in GaN-based HEMTs and related devices and a new method

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Photogalvanic effects in semiconductor quantum structure

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

New ways of forming combined quantum wire/dot structures and investigation of their photoconductive functions

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Self-assembled growth of GaSb type- II nanorods aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal(111)B GaAs2010

Author(s)

Journal Title

Data Source

[Journal Article] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs2010

Author(s)

Journal Title

Data Source

[Presentation] 微傾斜GaAs(111)B 基板上のGaSb タイプII ナノロッドの自己形成2012

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 自己形成InGaAsドット列における異方的な持続性光電流2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 自己形成InGaAsドット列における異方的な持続性光電流2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] GaSb量子ドット入りGaAsFET素子の光照射効果:過渡応答2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 微傾斜(111)B面上のInGaAs結合ドット列を介する異方的電子伝導の温度依存性2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 微傾斜(111)B面上のInGaAs結合ドット列を介する異方的電子伝導の温度依存性2009

Author(s)

Organizer

Place of Presentation

AKIYAMA Yoshihiro 秋山芳広