Ida Jiro 井田次郎

… Alternative Names

井田次郎イダジロウ

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Researcher Number	60506450
Other IDs
Affiliation (Current)	2025: 金沢工業大学, 産学連携室, 教授
Affiliation (based on the past Project Information) *help	2013 – 2018: 金沢工業大学, 工学部, 教授
Review Section/Research Field	Except Principal Investigator Science and Engineering
Keywords	Except Principal Investigator 放射線センサー / 3次元積層 / 低消費電力デバイス / ３次元積層 / 量子線イメージング / 微細加工プロセス / 先端機能デバイス / 放射線センサ / Silicon On Insulator / 半導体

Research on SOI 3D pixel process
- Principal Investigator
  
  Arai Yasuo
- Project Period (FY)
  2013 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  High Energy Accelerator Research Organization

All 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications2018
- Author(s)
  Mori Takayuki、Ida Jiro、Momose Shun、Itoh Kenji、Ishibashi Koichiro、Arai Yasuo
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 6 Pages: 565-570
- DOI
  10.1109/jeds.2018.2824344
- Peer Reviewed
- Data Source
  KAKENHI-WRAPUP-18H05200, KAKENHI-PLANNED-25109002
[Journal Article] Super Steep Subthreshold Slope PN-Body Tied SOI FET’s of Ultra Low Drain Voltage=0.1V with Body Bias below 1.0V2016
- Author(s)
  Takahiro Yoshida, Jiro Ida, Takashi Horii, Masao Okihara and Yasuo Arai
- Journal Title
  
  Proceedings of IEEE SOI-3D-Subtreshold Microelectronics Unified Conference
  
  Volume: - Pages: 1-3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-25109002
[Journal Article] Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V2015
- Author(s)
  Jiro Ida, Takayuki Mori, Yousuke Kuramoto, Takashi Horii, Takahiro Yoshida, Kazuma Takeda, Hiroki Kasai, Masao Okihara, Yasuo Arai
- Journal Title
  
  IEEE International Electron Devices Meeting (IEDM)
  
  Volume: 15800967 Pages: 22.7.1-22.7.4
- DOI
  10.1109/iedm.2015.7409761
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-25109002
[Journal Article] Total Ionization Damage Compensations in Double Silicon-on-Insulator Pixel Sensors2014
- Author(s)
  S. HONDA, K. HARA, K. TSUCHIDA, M. ASANO, N. TOBITA, T. MAEDA, Y. ARAI, T. MIYOSHI, et al.
- Journal Title
  
  Proceedings of Science
  
  Volume: TIPP2014 Pages: 1-8
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-25109002
[Journal Article] Mechanism of Super Steep Subthreshold Slope Characteristics with Body-Tied SOI MOSFET2013
- Author(s)
  Takayuki Mori, Jiro Ida
- Journal Title
  
  Proceedings of SISPAD Conference
  
  Volume: 1 Pages: 101-104
- DOI
  10.1109/sispad.2013.6650584
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-25109002
[Journal Article] Possibility of SOI Based Super Steep Subthreshold Slope MOSFETＳfor Ultra Low Voltage Application2013
- Author(s)
  Takayuki Mori and Jiro Ida
- Journal Title
  
  Proceedings of S3S Conference
  
  Volume: 1 Pages: 1-2
- DOI
  10.1109/s3s.2013.6716550
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-25109002
[Presentation] CP 法による SOI 裏面界面準位密度の評価2017
- Author(s)
  武田和馬,井田次郎, 林拓郎，細野竜太郎, 新井康夫
- Organizer
  応用物理学会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-16
- Data Source
  KAKENHI-PLANNED-25109002
[Presentation] Confirmation of SS=35μV/dec over 3 Decades of Drain Current and Hole Accumulation Effect on PN-Body Tied SOI Super Steep SS FET’s2016
- Author(s)
  Takashi Horii, Jiro Ida, Takahiro Yoshida, Masao Okihara and Yasuo Arai
- Organizer
  IEEE SILICON NANOELECTRONICS WORKSHOP 2016
- Place of Presentation
  Honolulu, USA
- Year and Date
  2016-06-12
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25109002
[Presentation] Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage down to 0.1V2015
- Author(s)
  Jiro Ida
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  Washington, D.C.(USA)
- Year and Date
  2015-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25109002
[Presentation] Research Status of Super Steep Cut off Devices and Possibility of it by SOI Based Devices for Ultra Low Power Applications
- Author(s)
  J. Ida
- Organizer
  2014 CMOS Emerging Technologies Workshop
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-06-06 – 2014-06-08
- Invited
- Data Source
  KAKENHI-PLANNED-25109002
[Presentation] 極低ドレイン電圧で急峻なサブスレッショルド特性を持つPNボディコンタクト付きSOI MOSFETの提案
- Author(s)
  森　貴之、田篠　奏、井田　次郎
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-17 – 2014-03-20
- Data Source
  KAKENHI-PLANNED-25109002

1. Arai Yasuo (90167990)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
2. 倉知郁生 (00533944)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 三好敏喜 (20470015)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

Ida Jiro 井田 次郎

井田 次郎 イダ ジロウ

Research Projects

Research Products

Co-Researchers

Research on SOI 3D pixel process

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Super Steep Subthreshold Slope PN-Body Tied SOI FET’s of Ultra Low Drain Voltage=0.1V with Body Bias below 1.0V2016

Author(s)

Journal Title

Data Source

[Journal Article] Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Total Ionization Damage Compensations in Double Silicon-on-Insulator Pixel Sensors2014

Author(s)

Journal Title

Data Source

[Journal Article] Mechanism of Super Steep Subthreshold Slope Characteristics with Body-Tied SOI MOSFET2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Possibility of SOI Based Super Steep Subthreshold Slope MOSFETＳfor Ultra Low Voltage Application2013

Author(s)

Journal Title

DOI

Data Source

[Presentation] CP 法による SOI 裏面界面準位密度の評価2017

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Confirmation of SS=35μV/dec over 3 Decades of Drain Current and Hole Accumulation Effect on PN-Body Tied SOI Super Steep SS FET’s2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage down to 0.1V2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Research Status of Super Steep Cut off Devices and Possibility of it by SOI Based Devices for Ultra Low Power Applications

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 極低ドレイン電圧で急峻なサブスレッショルド特性を持つPNボディコンタクト付きSOI MOSFETの提案

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

Ida Jiro 井田次郎

井田次郎イダジロウ