Wang Ke 王科

… Alternative Names

WANG Ke

Less

Researcher Number	60532223
Affiliation (based on the past Project Information) *help	2018: 国立研究開発法人理化学研究所, 光量子工学研究センター, 研究員 2017: 国立研究開発法人理化学研究所, 光量子工学研究領域, 研究員 2012: 立命館大学, 総合科学技術研究機構, ポストドクトラルフェロー 2008: 立命館大学, 総合理工学・研究機構, ポスドク研究員
Review Section/Research Field	Principal Investigator Crystal engineering Except Principal Investigator Applied materials science/Crystal engineering
Keywords	Principal Investigator ヘテロ構造 / THz QCL / 結晶工学 / MOCVD / quantum cascade laser / Terahertz / GaN / MBE / Quantum cascade laser Except Principal Investigator MIS構造 … More / RF-MBE / InGaN / InN / p型ドーピング / 分子線エピタキシー法 / 窒化インジウム / X線光電子分光法 / ケルビン力顕微鏡 / ショットキー電極 / オーミック電極 / KOH / ウェットエッチング / 極性 / DERI法 / ドライエッチング / 窒化インジウムガリウム / DERI / MBE / ヘテロ構造 / 結晶性 / キャリア濃度 / 窒素ラジカル / p形ドーピング / オーミックコンタクト / インターミキシング / ヘテロ界面 / 分子線エピタキシー / エピタキシャル成長 Less

Terahertz quantum cascade lasers based on (GaN)m/(AlN)n monolayer superlattices in order to exploit their potential for high temperature operationPrincipal Investigator
- Principal Investigator
  
  Wang Ke
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Institute of Physical and Chemical Research
Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Ritsumeikan University
Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Ritsumeikan University

All 2019 2018 2017 2013 2012 2011 2010 2009 Other

All Journal Article Presentation

[Journal Article] Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD2019
- Author(s)
  Fujikawa Sachie、Ishiguro Toshiya、Wang Ke、Terashima Wataru、Fujishiro Hiroki、Hirayama Hideki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 510 Pages: 47-49
- DOI
  10.1016/j.jcrysgro.2018.12.027
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14113, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
[Journal Article] Controlling loss of waveguides for potential GaN terahertz quantum cascade lasers by tuning the plasma frequency of doped layers2018
- Author(s)
  Ke Wang*, Tsung-Tse Lin, Li Wang, Wataru Terashima, and Hideki Hirayama
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: in press
- NAID
  210000149405
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K14113
[Journal Article] Controlling loss of waveguides for potential GaN terahertz quantum cascade lasers by tuning the plasma frequency of doped layers2018
- Author(s)
  Wang Ke、Lin Tsung-Tse、Wang Li、Terashima Wataru、Hirayama Hideki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 8 Pages: 081001-081001
- DOI
  10.7567/jjap.57.081001
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-17K14113, KAKENHI-PROJECT-15K13982
[Journal Article] High output power THz Quantum Cascade Lasers and their temperature dependent performance2018
- Author(s)
  Tsung-Tse Lin*, Ke Wang, Li Wang, and Hideki Hirayama
- Journal Title
  
  Journal of Infrared and Millimeter Waves
  
  Volume: in press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K14113
[Journal Article] Optimization of terahertz quantum cascade lasers by suppressing carrier leakage channel via high-energy state2018
- Author(s)
  Lin Tsung-Tse、Wang Li、Wang Ke、Grange Thomas、Hirayama Hideki
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 11 Pages: 112702-112702
- DOI
  10.7567/apex.11.112702
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-17K14113
[Journal Article] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
- Author(s)
  Wang Ke、Grange Thomas、Lin Tsung-Tse、Wang Li、Jehn Zoltan、Birner Stefan、Yun Joosun、Terashima Wataru、Hirayama Hideki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Issue: 6 Pages: 061109-061109
- DOI
  10.1063/1.5029520
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04251, KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-17K14113, KAKENHI-PROJECT-15K13982
[Journal Article] High output power THz quantum cascade lasers and their temperature dependent performance2018
- Author(s)
  T. T. Lin*, K. Wang*, L. Wang and H. Hirayama
- Journal Title
  
  J. Infrared Millim. Waves
  
  Volume: 37 Pages: 513-517
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14113
[Journal Article] Application of DERI Method to InN/InGaN MQW, Thick InGaN and InGaN/InGaN MQW Structure Growth2013
- Author(s)
  T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi
- Journal Title
  
  Proceedings of SPIE "Gallium Nitride Materials and Devices VIII
  
  Volume: 8625巻 Pages: 862502-862502
- DOI
  10.1117/12.2007258
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] P-type InGaN across the entire alloy composition range2013
- Author(s)
  K. Wang, T. Araki, K. M. Yu, T. Katsuki, M. A. Mayer, E. Alarcon-Llado, J. W. Ager, III, W. Walukiewicz and Y. Nanishi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 102巻 Issue: 10
- DOI
  10.1063/1.4795718
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] New Low-Temperature Growth Method for High-Quality Low-Temperature GaN Layer by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy2012
- Author(s)
  I. -S. Shin, K. Wang, T. Araki, E. Yoon, and Y. Nanishi
- Journal Title
  
  Applied Physics Express
  
  Volume: 5
- NAID
  10031140432
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Temperature dependence of Mg-H local vibrational modes in heavily doped InN:Mg2012
- Author(s)
  R. Cusco, N. Dome`nech-Amador, L. Artus, K. Wang, T. Yamaguchi, and Y. Nanishi
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] PN junction rectification in electrolyte gated Mg-doped InN2011
- Author(s)
  E.Alarcon-Llado, M.A.Mayer, B.W.Boudouris, R.A.Segalman, N.Miller, T.Yamaguchi, K.Wang, Y.Nanishi, E.E.Haller, J.W.Ager
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 99 Issue: 10
- DOI
  10.1063/1.3634049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09F09272, KAKENHI-PROJECT-21246004
[Journal Article] Investigation on InN Mole Fraction Fluctuation in InGaN Films Grown by RF-MBE2011
- Author(s)
  T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(c)
  
  Volume: 8 Issue: 5 Pages: 1499-1502
- DOI
  10.1002/pssc.201001203
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09F09272, KAKENHI-PROJECT-21246004, KAKENHI-PROJECT-21760237
[Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2011
- Author(s)
  K. Wang, T. Yamaguchi, T. Araki, E. Yoon, Y. Nanishi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50巻 Issue: 1S1 Pages: 01AE02-01AE02
- DOI
  10.1143/jjap.50.01ae02
- NAID
  210000138257
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
- Author(s)
  K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
- Author(s)
  K. Wang, N. Miller, R. Iwamoto, T. Yamaguchi, M. A. Mayer, T. Araki, Y. Nanishi, K. M. Yu, E. E. Haller, W. Walukiewicz, J. W. Ager III
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 98巻 Issue: 4
- DOI
  10.1063/1.3543625
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a) (印刷中(掲載決定))
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a)
  
  Volume: 207 Pages: 1356-1360
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
- Author(s)
  K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Arakiand Y. Nanishi
- Journal Title
  
  phys. stat. sol. (a)
  
  Volume: 207巻 Issue: 6 Pages: 1356-1360
- DOI
  10.1002/pssa.200983657
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000138257
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Broadening mechanisms, simulation, and experiments towards GaN based THz QCLs2018
- Author(s)
  K. Wang, T. T. Lin, L. Wang and H. Hirayama
- Organizer
  The 8th International Quantum Cascade Laser School and workshop (IQCLSW) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14113
[Presentation] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
- Author(s)
  Ke Wang,1 Thomas Grange,2 Tsung-Tse Lin,1 Li Wang, 1 Stefan Birner,2 Joosun Yun,1 Wataru Terashima,1 Hideki Hirayama1
- Organizer
  応物2018
- Data Source
  KAKENHI-PROJECT-17K14113
[Presentation] Simulation of broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
- Author(s)
  K. Wang, T. T. Lin, L. Wang and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors (IWN) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14113
[Presentation] : “MBE grown p-type AlGaN and MBE-MOCVD hybrid deep ultraviolet light emitting diodes2018
- Author(s)
  K. Wang, N. Maeda, K. Mahanmad, H. Hirayama
- Organizer
  The International Workshop on UV Materials and Devices (IWUVMD) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14113
[Presentation] Simulation of optical gain for GaN THz QCLs, using non-equilibrium Green’s function method2018
- Author(s)
  K. Wang, T. T. Lin, L. Wang, W. Terashima and H. Hirayama
- Organizer
  OSA-JSAP joint workshop, JSAP Spring meeting 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14113
[Presentation] Hybrid growth of AlGaN deep ultraviolet light emitting diodes by MBE and MOCVD2018
- Author(s)
  K. Wang, N. Maeda, M. Khan, H. Hirayama:
- Organizer
  The International Workshop on Nitride Semiconductors (IWN) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14113
[Presentation] Waveguide design for GaN/AlGaN terahertz quantum cascade lasers2017
- Author(s)
  Ke Wang 1,* , Tsung Tse Lin1, Wataru Terashima1,2, Hideki Hirayama1,2
- Organizer
  Asia Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14113
[Presentation] GaN系THz量子カスケードレーザーの導波路設計2017
- Author(s)
  王科，林宗澤, 寺嶋　亘、平山秀樹
- Organizer
  応物2017秋
- Data Source
  KAKENHI-PROJECT-17K14113
[Presentation] Waveguide design for GaN/AlGaN terahertz quantum cascade lasers2017
- Author(s)
  Ke Wang 1,* , Tsung Tse Lin1, Wataru Terashima1,2, Hideki Hirayama1,2
- Organizer
  International conference on Intersubband Transitions in Quantum Wells
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14113
[Presentation] Recent Progress on InN and InGaN Growth for Future Optoelectronic Devices2013
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
- Organizer
  Conference on LED and Its Industrial Application (LEDIA-13)
- Place of Presentation
  パシフィコ横浜(神奈川県)
- Year and Date
  2013-04-23
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Development of Growth and Characterization of InN, In-rich InGaN and Those Nano-structures2012
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
- Organizer
  IEEE International Conference on Solid-State and Integrated Circuit Technology、発表年月日
- Place of Presentation
  西安(中国)
- Year and Date
  2012-10-31
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors-Band gap-2012
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
- Organizer
  2012 Fall Meeting of the Korean Ceramic Society
- Place of Presentation
  大田(韓国)
- Year and Date
  2012-10-19
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 窒化物半導体新領域開拓にむけての材料技術最近の展開2012
- Author(s)
  名西〓之、山口智広、王科、荒木努、E.Yoon
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)(招待講演)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Application of DERI Method to thick InGaN and InN/InGaN MQW structure Growth2012
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  KAUST-UCSB-NSF Workshop on Solid-State Lighting
- Place of Presentation
  Thwal(サウジアラビア)(招待講演)
- Year and Date
  2012-02-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Importance of Advanced Plasma for Frontier Nitride Semiconductor Technologies2012
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2012
- Place of Presentation
  中部大学(愛知県)(基調講演)
- Year and Date
  2012-03-05
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] InN Overgrowth Through in Situ A1N Nano-Mask on Sapphire Substrate2012
- Author(s)
  王科、荒木努、武内道一、山口智広、名西〓之
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Free Holes in Mg Doped InN Confirmed by Thermopower Experiments2012
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2012
- Place of Presentation
  中部大学(愛知県)
- Year and Date
  2012-03-08
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Evaluation of P-type InN Using Temperature Dependence of I-V Characteristics2011
- Author(s)
  H.Sakurai, J.Kikawa, R.Iwamoto, K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  Electronic Materials Conference 2011 (EMC2011)
- Place of Presentation
  サンタバーバラ(アメリカ)
- Year and Date
  2011-06-24
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Application of DERI Method to InGaN Growth and Mg Doping2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  Advanced Workshop on 'Frontiers in Electronics' (WOFE 2011)
- Place of Presentation
  San Juan(プエルトリコ)(招待講演)
- Year and Date
  2011-12-21
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Temperature Dependence of I-V Characteristics of p-type InN Grown by RF-MBE2011
- Author(s)
  H.Sakurai, J.Kikawa, R.Iwamoto, K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  30th Electronic Materials Symposium (EMS30)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Investigation of InN Nanocolumns Grown on GaN Templates by Molecular Beam Epitaxy2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of InN Nanocolumns on GaN Templates and Sapphire by RF-MBE2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  鳥羽国際ホテル(三重県)
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Strong Luminescence from Self-Assembled InN Nanocolumns with Few Dislocations Grown by Molecular Beam Epitaxy2011
- Author(s)
  K.Wang, T.Araki, T.Yamaguchi, E.Yoon, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-15
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress of InN and Related Alloys Grown by DERI Method2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  2011 E-MRS Spring Meeting
- Place of Presentation
  ニース(フランス)(招待講演)
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] PN Junction Measurement in InN2011
- Author(s)
  E.A.Llado, M.Mayer, N.Mayer, T.Yamaguchi, K.Wang, E.Haller, Y.Nanishi, J.Ager
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wangand T. Araki
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German - Japanese - Spanish Joint Workshop
- Place of Presentation
  グラナダ(スペイン)
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
- Place of Presentation
  Granada Spain
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] In Situ Monitoring Techniques by DERI Method2011
- Author(s)
  T.Yamaguchi, K.Wang, T.Araki, T.Honda, E.Yoon, Y.Nanishi
- Organizer
  30th Electronic Materials Symposium (EMS30)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] In組織揺らぎのメカニズム解明に向けたRF-MBE成長InGaNのCL測定評価2010
- Author(s)
  木村拓也、福本英太、山口智広、王科、金子昌充、武田彰史、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] In Situ Monitoring of InN Grown by RF-MBE2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E..Yoon, Y.Nanishi
- Organizer
  ISPlasma2010
- Place of Presentation
  名古屋(日本)
- Year and Date
  2010-03-09
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Free Hole Concentration and Mobility in InN : Mg2010
- Author(s)
  N.Miller, J.W.Ager III, E.E.Haller, W_ Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Evidence of Rectification in InN pn Junctions2010
- Author(s)
  N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress in Growth and Characterization of InN and Related Aloys and Challenges for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.AgerIII, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Electronic Materials Conference 2010 (EMC2010)2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
- Organizer
  Electronic Materials Conference 2010 (EMC2010)
- Place of Presentation
  Notre Dame, Indiana, USA
- Year and Date
  2010-06-25
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wang, T. Araki, M. Kaneko, E. Yoon, N. Miller, J. W. Ager III, K. M. Yu, W. Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  タンパ(アメリカ)
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method2010
- Author(s)
  T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
- Organizer
  The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
- Place of Presentation
  Beijing, China
- Year and Date
  2010-05-18
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価2010
- Author(s)
  名西〓之、山口智広、王科、荒木努、Euijoon Yoon
- Organizer
  応用物理学会九州支部学術講演会
- Place of Presentation
  九州大学伊都キャンパス福岡県福岡市
- Year and Date
  2010-11-27
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method2010
- Author(s)
  T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  16th International Conference on Molecular Beam Epitaxy (MBE 2010)
- Place of Presentation
  Berlin Germany
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Mg doped InN and search for holes2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Adsorption and Desorption of Indium Adlayer on GaN Surface2010
- Author(s)
  王科、山口智広、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Evidence of Free Holes in Mg Doped InN2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
- Organizer
  International Symposium on Growth of III-Nitrides 2010
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010
- Author(s)
  T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  International Symposium on Growth of III-Nitrides 2010
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法により作製されたInNの光反射率その場観察2009
- Author(s)
  王科、山口智広、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
- Place of Presentation
  張家界(中国)
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Plarized Photoluminescence from Polar and Nonpolar InN Films2009
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法を用いたRF-MBE InN結晶成長と各種その場観察評価2009
- Author(s)
  山口智広、荒木努、王科、岩本亮輔、名西やすし
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  第1回窒化物半導体結晶成長講演会(POSt-ISGN2)
- Place of Presentation
  東京農工大学(小金井市)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] RF-MBE InN成長におけるDERI法の有用性2009
- Author(s)
  山口智広、王科、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Polarized Photoluminescence from Nonpolar InN Films2009
- Author(s)
  K.Wang, T.Yamaguchi, K.Kawashima, Y.Takagi, T.Araki, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法を用いたInGaN系量子ナノ構造のRF-MBE成長
- Author(s)
  荒木努、上松尚、阪口順一、王科、山口智広、Euijoon Yoon、名西やす之
- Organizer
  2012年度電子情報通信学会　レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪市立大学, 大阪府
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of high quality LT GaN layer with indium surfactant
- Author(s)
  I. S. Shin, K. Wang, T. Araki, E. Yoon and Y. Nanishi
- Organizer
  31st　Electronic Materials Symposium (EMS31)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of InGaN-based heterostructures using DERI by RF-MBE
- Author(s)
  T. Araki, N. Uematsu, J. Sakaguchi, K. Wang, T. Yamaguchi, E. Yoon, Yasushi Nanishi
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学城北地区/松山大学文京キャンパス、愛媛県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] P-type InGaN Grown by RG-MBE Across the Entire Composition Range
- Author(s)
  K. Wang, T. Katsuki, J. Sakaguchi, T. Araki, Y. Nanishi
- Organizer
  The 9th International Symposium on Semiconductor Light Emitting Devices 2012
- Place of Presentation
  Berlin, Germany
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] N-polar InN overgrowth on in situ AlN mask on sapphire substrate
- Author(s)
  K. Wang, T. Araki, M. Takeuchi, Y. Nanishi
- Organizer
  The 17th International Conference on Conference on Molecular Beam Epitaxy (MBE-17)
- Place of Presentation
  奈良県新公会堂　奈良県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] P-type InGaN across the entire composition range
- Author(s)
  K. Wang, T. Katsuki, J. Sakaguchi, T. Araki, Y. Nanishi, K. M. Yu, M. Mayer, E. Alarcon-Llado, J. W. Ager III, W. Walukiewicz
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学城北地区/松山大学文京キャンパス愛媛県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Frontier Research of Nitride Semiconductors toward Longer Wavelength and Higher Speed
- Author(s)
  Y. Nanishi, T.Yamaguchi, K.Wang, T.Araki and E. Yoon
- Organizer
  2nd Solid-State Systems Symposium; VLSIs and Semiconductor Related Technologies (4S-2012)
- Place of Presentation
  Ho Chi Minh City, Vietnam
- Invited
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of improved quality LT GaN by using a new low temperature growth method
- Author(s)
  I. Shin, KeWang, T. Araki, E. Yoon, and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Selective growth of N-polar InN on an in situ AlN mask on sapphire substrate
- Author(s)
  K. Wang, T. Araki, M. Takeuchi and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of InGaN/InGaN MQW structures using DERI by RF-MBE
- Author(s)
  T. Araki, N. Uematsu, K. Wang, T. Yamaguchi, E. Yoon and Y. Nanishi
- Organizer
  The Electronic Materials Conference　2012（EMC2012）
- Place of Presentation
  State College, USA
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of InN, InGaN and those Nano-structures by DERI Method
- Author(s)
  Y. Nanishi, T.Yamaguchi, K. Wang, T. Araki and E. Yoon
- Organizer
  2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices
- Place of Presentation
  Berlin, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth
- Author(s)
  T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi
- Organizer
  SPIE Photonics West 2013
- Place of Presentation
  San Francisco, California, USA
- Invited
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors’ Band gap-
- Author(s)
  Y. Nanishi, T.Yamaguchi, K.Wang, T.Araki and E. Yoon
- Organizer
  2012 Fall Meeting of the Korean Ceramic Society
- Place of Presentation
  Daejoin, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] N-polar InN overgrowth on in situ AlN mask on sapphire substrate
- Author(s)
  K. Wang, T. Araki, M. Takeuchi, and Y. Nanishi
- Organizer
  31st　Electronic Materials Symposium (EMS31)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of High Quality Thin InN Layers by RF-MBE
- Author(s)
  T. Araki, N. Uematsu, M. Yutani, J. Sakaguchi, K. Wang, A. Uedono, T. Fujishima, E. Matioli, T. Palacios, Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] In-situ Raman probing of the electron accumulation layer in InN
- Author(s)
  E. Alarcon-Llado, K. Wang, T. Araki, Y. Nanishi and J. W. Ager
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] T-dependence of local vibrational modes of Mg-H complexes in InN:Mg
- Author(s)
  R. Cusco, N. Domenech-Amador, L. Artus, K. Wang, T. Yamaguchi, and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of InGaN film and InGaN/InGaN periodic structure using DERI method
- Author(s)
  T. Yamaguchi, N. Uematsu, K. Wang, T. Araki, T. Honda, E. Yoon, and Y. Nanishi
- Organizer
  31st　Electronic Materials Symposium (EMS31)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] P-type InGaN across the entire composition range
- Author(s)
  K. Wang, T. Katsuki, J. Sakaguchi, T. Araki, Y. Nanishi, K. M. Yu, M. Mayer, E. Alarcon-Llado, J. W. Ager III, W. Walukiewicz
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004

1. NANISHI Yasushi (40268157)

# of Collaborated Projects: 2 results

# of Collaborated Products: 72 results
2. YAMAGUCHI Tomohiro (50454517)

# of Collaborated Projects: 2 results

# of Collaborated Products: 60 results
3. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 2 results

# of Collaborated Products: 69 results
4. KANEKO Masamitsu (70374709)

# of Collaborated Projects: 2 results

# of Collaborated Products: 6 results
5. NAOI Hiroyuki (10373101)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. NA Hyunseok (80411239)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. KIKAWA Jyunjiro (70469196)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. 林宗澤

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
10. 平山秀樹

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
11. Yun Joosun

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Wang Ke 王 科

WANG Ke

Research Projects

Research Products

Co-Researchers

Terahertz quantum cascade lasers based on (GaN)m/(AlN)n monolayer superlattices in order to exploit their potential for high temperature operationPrincipal Investigator

Principal Investigator

Project Period (FY)

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Research Institution

Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Controlling loss of waveguides for potential GaN terahertz quantum cascade lasers by tuning the plasma frequency of doped layers2018

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Controlling loss of waveguides for potential GaN terahertz quantum cascade lasers by tuning the plasma frequency of doped layers2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High output power THz Quantum Cascade Lasers and their temperature dependent performance2018

Author(s)

Journal Title

Data Source

[Journal Article] Optimization of terahertz quantum cascade lasers by suppressing carrier leakage channel via high-energy state2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High output power THz quantum cascade lasers and their temperature dependent performance2018

Author(s)

Journal Title

Data Source

[Journal Article] Application of DERI Method to InN/InGaN MQW, Thick InGaN and InGaN/InGaN MQW Structure Growth2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] P-type InGaN across the entire alloy composition range2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] New Low-Temperature Growth Method for High-Quality Low-Temperature GaN Layer by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy2012

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Temperature dependence of Mg-H local vibrational modes in heavily doped InN:Mg2012

Author(s)

Journal Title

Data Source

[Journal Article] PN junction rectification in electrolyte gated Mg-doped InN2011

Author(s)

Journal Title

DOI

Data Source

Wang Ke 王科