NAGASAWA Hiroyuki 長澤弘幸

Researcher Number	60649367
Other IDs
Affiliation (based on the past Project Information) *help	2015: 東北大学, 電気通信研究所, 産学官連携研究員
Review Section/Research Field	Except Principal Investigator Thin film/Surface and interfacial physical properties
Keywords	Except Principal Investigator 表面化学反応 / 転位 / 積層欠陥 / グラフェン / ヘテロエピタキシ / 3C-SiC

Innovative betterment of epitaxial graphene on Si substrate that accelerates realization of graphene electronics
- Principal Investigator
  
  Suemitsu Maki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University

All 2016 2015 2014 Other

All Journal Article Presentation

[Journal Article] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2016
- Author(s)
  Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, and Maki Suemitsu
- Journal Title
  
  Phys. Status Solidi A
  
  Volume: 印刷中 Issue: 5 Pages: 1125-1129
- DOI
  10.1002/pssa.201532675
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor2015
- Author(s)
  Hiroyoki Nagasawa, Ramya Gurunathan, Maki Suemitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: 821-823 Pages: 108-114
- DOI
  10.4028/www.scientific.net/msf.821-823.108
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)2015
- Author(s)
  Shota Sambonsuge, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu
- Journal Title
  
  Diamond & Related Materials
  
  Volume: 67 Pages: 51-53
- DOI
  10.1016/j.diamond.2016.02.020
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure2014
- Author(s)
  Sai Jiao, Yuya Murakami, Hiroyuki Nagasawa, Hirokazau Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, Maki Suemitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: 806 Pages: 89-93
- DOI
  10.4028/www.scientific.net/msf.806.89
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-23000008
[Journal Article] Controlling Planar Defects in 3C–SiC: Ways to Wake it up Develop 3C-SiC as a Practical Semiconductor2014
- Author(s)
  Hiroyuki Nagasawa, Maki Suemitsu
- Journal Title
  
  ECSCRM2014: European Conf. on Silicon Carbide and Related Materials Abstracts Book
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] SiCエピタキシャル成長技術とポリタイプ積層2015
- Author(s)
  長澤弘幸
- Organizer
  第45回結晶成長国内会議（NCCG-45）
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2015-10-20
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] What is 'Killer Defect' in 3C-SiC2014
- Author(s)
  長澤弘幸
- Organizer
  IUMRS-ICA: the 15th International Union of Materials Research Societies, International Conference in Asia
- Place of Presentation
  福岡，日本
- Year and Date
  2014-08-29
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Controlling Planar Defects in 3C–SiC: Ways to Wake it up Develop 3C-SiC as a Practical Semiconductor2014
- Author(s)
  Hiroyuki Nagasawa
- Organizer
  ECSCRM2014: European Conf. on Silicon Carbide and Related Materials （Key Note Talk)
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-22
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Epitaxial Graphene Formation on 3C-SiC(111)/4H-AlN(0001) Double Layer Stacking on Si(111) Substrates
- Author(s)
  S. Jiao, H. Fukidome, H. Nagasawa, S. Filimonov, M. Tateno, I. Makabe, T. Nakabayashi, and M. Suemitsu
- Organizer
  The International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  宮崎
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] 微傾斜Si(111)基板上3C-SiC(111)薄膜の断面TEM評価
- Author(s)
  原本直樹、長澤弘幸、伊藤俊、吹留博一、末光眞希
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  浦和
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] 3C-SiC/Si(111)ヘテロエピタキシャル界面から発生する積層欠陥の抑制
- Author(s)
  細谷友崇、三本菅正太、長澤弘幸、伊藤俊、吹留博一、末光眞希
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  浦和
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Si(110)基板上3C-SiC(111)結晶方位回転エピ膜の断面TEM評価
- Author(s)
  三本菅正太、長澤弘幸、伊藤駿、吹留博一、末光眞希
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  浦和
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Si(110)基板上3C-SiC(111)回転エピ膜上に形成したエピタキシャルグラフェンの断面TEM 評価
- Author(s)
  三本菅正太，長澤弘幸，Sergey Filimonov ，伊藤駿，吹留博一，末光眞希
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-25286053

1. Suemitsu Maki (00134057)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
2. FUKIDOME Hirokazu (10342841)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
3. JIAO Sai (80710475)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

NAGASAWA Hiroyuki 長澤 弘幸

Research Projects

Research Products

Co-Researchers

Innovative betterment of epitaxial graphene on Si substrate that accelerates realization of graphene electronics

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Controlling Planar Defects in 3C–SiC: Ways to Wake it up Develop 3C-SiC as a Practical Semiconductor2014

Author(s)

Journal Title

Data Source

[Presentation] SiCエピタキシャル成長技術と ポリタイプ積層2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] What is 'Killer Defect' in 3C-SiC2014

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Controlling Planar Defects in 3C–SiC: Ways to Wake it up Develop 3C-SiC as a Practical Semiconductor2014

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Epitaxial Graphene Formation on 3C-SiC(111)/4H-AlN(0001) Double Layer Stacking on Si(111) Substrates

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] 微傾斜Si(111)基板上3C-SiC(111)薄膜の断面TEM評価

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] 3C-SiC/Si(111)ヘテロエピタキシャル界面から発生する積層欠陥の抑制

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Si(110)基板上3C-SiC(111)結晶方位回転エピ膜の断面TEM評価

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Si(110)基板上3C-SiC(111)回転エピ膜上に形成したエピタキシャルグラフェンの断面TEM 評価

Author(s)

Organizer

Place of Presentation

Data Source

NAGASAWA Hiroyuki 長澤弘幸

[Presentation] SiCエピタキシャル成長技術とポリタイプ積層2015