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Sato Shingo  佐藤 伸吾

ORCIDConnect your ORCID iD *help
Researcher Number 60709137
Other IDs
Affiliation (Current) 2025: 関西大学, システム理工学部, 准教授
Affiliation (based on the past Project Information) *help 2021 – 2023: 関西大学, システム理工学部, 准教授
Review Section/Research Field
Principal Investigator
Basic Section 21050:Electric and electronic materials-related
Keywords
Principal Investigator
界面電荷密度 / 移動度 / シート抵抗 / 低電界移動度 / チャネル伝導 / 容量-電圧特性 / 伝送線路モデル / Kelvin法 / 積層半導体基板 / pseudo-MOS法
  • Research Projects

    (1 results)
  • Research Products

    (9 results)
  •  A Study on Parameter Extraction Method of Carrier Transport Properties in Layered Semiconductor SubstratesPrincipal Investigator

    • Principal Investigator
      Sato Shingo
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Kansai University

All 2024 2023 2022 2021

All Journal Article Presentation

  • [Journal Article] Detailed analysis of the capacitance characteristic measured using the pseudo-metal–oxide–semiconductor method2024

    • Author(s)
      Sato Shingo、Yuan Yifan
    • Journal Title

      Solid-State Electronics

      Volume: 217 Pages: 108950-108950

    • DOI

      10.1016/j.sse.2024.108950

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21K04160
  • [Journal Article] Detailed analysis of electrical components on a layered wafer via the AC pseudo-MOS method2023

    • Author(s)
      Yuan Yifan、Sato Shingo
    • Journal Title

      Solid-State Electronics

      Volume: 210 Pages: 108811-108811

    • DOI

      10.1016/j.sse.2023.108811

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21K04160
  • [Journal Article] Detailing Influence of Contact Condition and Island Edge on Dual-Configuration Kelvin Pseudo-MOSFET Method2021

    • Author(s)
      Mori Daigo、Nakata Iori、Matsuda Masayoshi、Sato Shingo
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 68 Issue: 6 Pages: 2906-2911

    • DOI

      10.1109/ted.2021.3074115

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21K04160
  • [Presentation] AC pseudo-MOS法による積層ウエハ上の電気的成分の詳細解析2024

    • Author(s)
      袁 一凡, 佐藤伸吾
    • Organizer
      先端科学技術シンポジウム2024
    • Data Source
      KAKENHI-PROJECT-21K04160
  • [Presentation] Detailed analysis of electrical components on a layered wafer with an ac pseudo-MOS method2023

    • Author(s)
      Y. Yuan, and S. Sato
    • Organizer
      9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04160
  • [Presentation] Detailed analysis of electrical components on a layered wafer with an ac pseudo-MOS method,2023

    • Author(s)
      Y. Yuan, S. Sato
    • Organizer
      EuroSOI-ULIS’2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04160
  • [Presentation] 高精度電気物性値抽出に向けた積層半導体基板評価技術の開発2023

    • Author(s)
      袁一凡, 佐藤伸吾
    • Organizer
      第27回関西大学先端科学技術シンポジウム
    • Data Source
      KAKENHI-PROJECT-21K04160
  • [Presentation] Detailed analysis of electrical components on SOI wafer with an ac pseudo-MOS method,2022

    • Author(s)
      Y. Yuan, and S. Sato
    • Organizer
      The 2022 International Meeting for Future of Electron Devices, Kansai
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04160
  • [Presentation] Modeling the propagation of ac signal on the channel of the pseudo-MOS method2021

    • Author(s)
      Shingo Sato
    • Organizer
      2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04160

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