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Ishikawa Mizue  石川 瑞恵

ORCIDConnect your ORCID iD *help
Researcher Number 60751865
Other IDs
Affiliation (Current) 2025: 日本大学, 工学部, 講師
Affiliation (based on the past Project Information) *help 2019 – 2024: 日本大学, 工学部, 講師
2023: 日本大学, 工学部, 専任講師
Review Section/Research Field
Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related / 0302:Electrical and electronic engineering and related fields
Keywords
Principal Investigator
スピン伝導 / SiスピンMOSFET / ホイスラー合金 / 界面粗さ / 界面抵抗 / スピントロニクス / 界面 / シリコン / Si spin-MOSFETs / Heusler / spin
  • Research Projects

    (3 results)
  • Research Products

    (7 results)
  •  Development of Low Interfacial Roughness Structures to Realize High Performance in Silicon Spin Field Effect TransistorsPrincipal Investigator

    • Principal Investigator
      石川 瑞恵
    • Project Period (FY)
      2024 – 2026
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Nihon University
  •  Development of Low Interface Resistance Structures Enabling the Realization of Si Spin MOSFETsPrincipal Investigator

    • Principal Investigator
      ISHIKAWA Mizue
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Nihon University
  •  Development of highly efficient Si spin-MOSFETs by interface-controlled techniquesPrincipal Investigator

    • Principal Investigator
      Ishikawa Mizue
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Grant-in-Aid for Research Activity Start-up
    • Review Section
      0302:Electrical and electronic engineering and related fields
    • Research Institution
      Nihon University

All 2024 2023 2022 2020

All Journal Article Presentation

  • [Journal Article] Study of Spin Transport and Magnetoresistance Effect in Silicon-based Lateral Spin Devices for Spin-MOSFET Applications2020

    • Author(s)
      M. Ishikawa, Y. Saito, K. Hamaya
    • Journal Title

      J. Magn. Soc. Jpn.

      Volume: 44 Issue: 3 Pages: 56-63

    • DOI

      10.3379/msjmag.2005RV002

    • NAID

      130007839542

    • ISSN
      1882-2924, 1882-2932
    • Year and Date
      2020-05-01
    • Language
      English
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K23522
  • [Presentation] SiスピンMOSFETの実現に向けた高規則度ホイスラー合金の作製2024

    • Author(s)
      野木祐介,緑川大己,石川瑞恵
    • Organizer
      R6年東北地区若手研究者研究発表会
    • Data Source
      KAKENHI-PROJECT-21K14213
  • [Presentation] SiスピンMOSFETの実現に向けた高規則度ホイスラー合金/CoFe強磁性体電極の作製2023

    • Author(s)
      林龍哉, 半澤圭悟, 石川瑞恵
    • Organizer
      R5年東北地区若手研究者研究発表会
    • Data Source
      KAKENHI-PROJECT-21K14213
  • [Presentation] 半導体スピン素子のための高濃度p型Si層の作製2023

    • Author(s)
      石川 瑞恵
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K14213
  • [Presentation] SiスピンMOSFETの実現に向けた高規則度ホイスラー合金Co2MnSnの作製2023

    • Author(s)
      山岸大紀, 玉貫海渡, 石川瑞恵
    • Organizer
      R5年東北地区若手研究者研究発表会
    • Data Source
      KAKENHI-PROJECT-21K14213
  • [Presentation] 半導体スピン素子のための高濃度Si層の作製2022

    • Author(s)
      石川 瑞恵
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K14213
  • [Presentation] n+-Siスピン伝導チャネルにおけるスピン緩和について2020

    • Author(s)
      石川瑞恵,浜屋宏平
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K23522

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