KAWANISHI Hideo 川西英雄

Researcher Number	70016658
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2005 – 2010: 工学院大学, 工学部, 教授 2008: Kogakuin University, 工学部 2000 – 2002: Kogakuin University, Electronic Engineering, Professor, 工学部, 教授 1999: 工学院大, 工学部, 教授 1995 – 1996: 工学院大学, 工学部, 教授
Review Section/Research Field	Principal Investigator 電子デバイス・機器工学 / Science and Engineering / Electron device/Electronic equipment
Keywords	Principal Investigator 窒化物半導体 / 半導体レーザ / 量子井戸 / 超格子 / BAlGaN / GaN / エピタキシャル成長 / ワイドギャップ / 深紫外半導体レーザ / Light Emitting Diode … More / Multi Buffer Layer Structure / Residual Strain Control / Optical Device / Deep-UV / 多重バッフア / 残留歪制御 / BAlGaN四元混晶 / 発光ダイオード / 多重バッファ / 残留歪み制御 / 発光デバイス / 紫外域 / Multi buffer layer / Strain control / Optical electrical integrated circuit / Hetero epitaxy / マルチ・バッファ層 / 歪制御 / 光・電子集積回路 / ヘテロ・エピタキシ / 6H-SiC substrate / Nitride semiconductor / Lattice matting system / (BAlGa)N quatrnary / UV semiconductor laser diode / Optical memory disk / 混晶半導体 / 6H-SiC基板 / 格子整合系 / (BAlGa)N混晶半導体 / 紫外線半導体レーザ / 光ディスク / エビタキシャル成長 / バッファ層 / バッフア層 / 歪み制御 / エピタキシル成長 / ドーピング材料 / p型半導体 / 交互供給法 / AlGaN / 炭素 / p型不純物 / 発振モード / 光学異方性 / 室化物半導体 / 深紫外 / ワイドギヤツプ / 窒化物半導体' / 量子井戸構造 / 深紫外域 Less

Growth of High Quality AlGaN and its Application to Deep UV LED and LDPrincipal Investigator
- Principal Investigator
  
  KAWANISHI Hideo
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kogakuin University
Research on Deep-UV Semiconductor Laser Lasing in 205～250nm RegionPrincipal Investigator
- Principal Investigator
  
  KAWANISHI Hideo
- Project Period (FY)
  2005 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kogakuin University
青・紫外域発光素子用BAlGaInN/GaN系多層膜と量子井戸の形成とデバイス化Principal Investigator
- Principal Investigator
  
  川西英雄
- Project Period (FY)
  2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Review Section
  
  Science and Engineering
- Research Institution
  Kogakuin University
青・紫外域発光素子用BAlGaN系多層膜と量子井戸の形成とデバイス化Principal Investigator
- Principal Investigator
  
  川西英雄
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kogakuin University
BAlGaN/AlN High Efficient UV Emitting Devices in 200nm 355nm RegionPrincipal Investigator
- Principal Investigator
  
  KAWANISHI Hideo
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Kogakuin University
Basic investigation of optical electrical integrated circuit adapting extreme environmentPrincipal Investigator
- Principal Investigator
  
  KAWANISHI Hideo
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Kogakuin University
Fundamental Research of Ultra-Violet Semiconductor Laser Diode.Principal Investigator
- Principal Investigator
  
  KAWANISHI Hideo
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Kogakuin University

All 2011 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation Patent

[Journal Article] AlGaN系深紫外半導体レーザの現状と課題2010
- Author(s)
  川西英雄
- Journal Title
  
  No.1
  
  Pages: 7-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] AlGaN系深紫外半導体レーザの現状と課題2010
- Author(s)
  川西英雄
- Journal Title
  
  Microoptics News 28
  
  Pages: 7-10
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] AlGaN系深紫外半導体レーザの現状と課題2010
- Author(s)
  川西英雄
- Journal Title
  
  Micro-optics News 28No1
  
  Pages: 7-11
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] AlGaN系深紫外半導体レーザの現状と課題2010
- Author(s)
  川西英雄
- Journal Title
  
  Microoptics News 28
  
  Pages: 7-10
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Investigation on Conductivity at the Gan/ATN/SiC Subsrate interface for Vertical Nitraide Power FETs2008
- Author(s)
  Yuu Wakamiya, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Physics Status Solidi, (C) No.6
  
  Pages: 1505-1507
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Investigation on Conductivity at the Gan/AIN/SiC Subsrate interface for Vertical2008
- Author(s)
  Yuu Wakamiya, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Physica Status Solidi No.6
  
  Pages: 1505-1507
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Structure and properties of Deep-UV ATGaN MQW laser2008
- Author(s)
  Hideo Kawanishi
- Journal Title
  
  2008 Int.Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int.Global-COE Summer School (Photonics Integration-Core Electronics : PTCE) and 31st Int.Symposium on Optical Communications, art. No.4634427
  
  Pages: 36-37
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007
- Author(s)
  Kouichi Murakawa, Eiichiro Niikura, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan. J. Appl. Phys 46,No.6A
  
  Pages: 3301-3304
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Improvement of Crystal Quality of n-AlGaN by Alternate-Source-Feeding Metal Organic Vapor Phase Epitaxy2007
- Author(s)
  Ken-ichi Isono*, Eiichiro Niikura, Koichi Murakawa, Fumio Hasegawa, and Hideo Kawanishi
- Journal Title
  
  Japan J. Appl. Phys. Vol.46
  
  Pages: 5711-5714
- NAID
  40015602574
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Improvement of Crystal Quality of n-AlGaN by Alternate-Source-Feeding Metal Organic Vapor Phase Epitaxy2007
- Author(s)
  Ken-ichi Isono, Eiichiro Niikura, Koichi Murakawa, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan J.Appl.Phys. Vol.46, No.9A
  
  Pages: 5711-5714
- NAID
  40015602574
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Tm-mode lasing and anisotropic polarization properties of AlGaN multiple quantum well lasers in deep-ultraviolet spectral region2007
- Author(s)
  Hideo Kawanishi*, Masanori Senuma, and Takeaki Nukui
- Journal Title
  
  Proceeding of SPIE Photonics West 2007 Vol.6473
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007
- Author(s)
  Koichiro Murakawa, EIichiro Nikura, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan. J. Appl. Phys 46・6A(掲載確定、ページ未定)
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007
- Author(s)
  Koichiro Murakawa, EIichiro Nikura, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan. J. Appl. Phys 46・6A(掲載確定、ページ未定)
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN Yuu Wakamiya*, Fumio Hasegawa, /GaN) Multi-buffer-layer Structure2007
- Author(s)
  Kouichi Murakawa*, Eiichiro Niikura, Fumio Hasegawa, and Hideo Kawanishi
- Journal Title
  
  Japan.J.Appl.Phys. Vol.46
  
  Pages: 3301-3304
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Tm-mode lasing and anisotropic polarization properties of AlGaN multiple quantum well lasers in deep-ultraviolet spectral region2007
- Author(s)
  Hideo Kawanishi, Masanori Senuma, Takeaki Nukui
- Journal Title
  
  Proceeding of SPIE Photonics West 2007 Vol.6473
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Improvement of crystal quality of AIN and AlGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer2007
- Author(s)
  Eiichiro Niikura*, Kouichi Murakawa, Fumio Hasegawa, and Hideo Kawanishi
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 345-348
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Improvement of crystal quality of AIN and AlGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer2007
- Author(s)
  Eiichiro Niikura, Koichi Murakawa, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 345-345
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007
- Author(s)
  Kouichi Murakawa, Eiichiro Niikura, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan.J.Appl.Phys. Vol.46, No.6A
  
  Pages: 3301-3304
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] I mprovement of crystal quality of AIN and AiGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer2007
- Author(s)
  E.Niikura, K.Murakawa, F.Hasegawa, H.Kawanishi
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 345-348
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] I mprovement of crystal quality of AIN and AlGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer2007
- Author(s)
  E.Niikura, K.Murakawa, F.Hasegawa, H.Kawanishi
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 345-348
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Improvement of crystal quality of AIN and AlGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer2007
- Author(s)
  Eiichiro Niikura, Kouichi Murakawa, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 345-348
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007
- Author(s)
  Kouichiro Murakawa, Eiichiro Nikura, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan. J. Appl. Phys 46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ=240mm) AlGaN multiple-quantum-well lasers2006
- Author(s)
  Hideo Kawanishi, Masanori Senuma, Takeaki Nukui
- Journal Title
  
  Appl.Phys.Lett. Vol.89, No.4
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region2006
- Author(s)
  Hideo Kawanishi Masanori Senuma, Mao Yamamoto, Eiichiro Niikura, Takeaki Nukui
- Journal Title
  
  Appl.Phys.Lett. Vol.89, No.8
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in AlxGaN1-xN2006
- Author(s)
  Hideo Kawanishi*, Eiichiro Niikura, Mao Yamamoto, and Shoichiro Takeda
- Journal Title
  
  Appl. Phys. Lett. Vol.89
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] 深紫外AlGaN多重量子井戸半導体レーザーの工学的異方特性2006
- Author(s)
  川西英雄, 瀬沼正憲, 貫井猛晶
- Journal Title
  
  日本工学会(応用物理学会) 35巻・5号
  
  Pages: 265-267
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Anisotropic polarization characteristics of lasing and spontaneous surface and edge emission from deep-ultra violet (λ≒240nm) AlGaN multiple-quantum-well lasers2006
- Author(s)
  H.Kawanishi, M.Senuma, T.Nukui
- Journal Title
  
  Appl.Phys.Lett (掲載予定)
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in Al_xGaN_<1-x>N2006
- Author(s)
  Hideo Kawanishi Eiichiro Niikura, Mao Yamamoto, Shoichiro Takeda
- Journal Title
  
  Appl.Phys.Lett. Vol.89, No.25
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in Al_x GaN_<1-x> N2006
- Author(s)
  Hideo Kawanishi, Eiichiro Niikura, Mao Yamamoto, Shoichiro Takeda
- Journal Title
  
  Appl. Phys. Lett, 89・25
  
  Pages: 251107-251107
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region2006
- Author(s)
  Hideo Kawanishi, Masanori Senuma, Mao Yamamoto, Eiichiro Niikura, Takeaki Nukui
- Journal Title
  
  Appl. Phys. Lett 89,8
  
  Pages: 81121-81121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ=240 nm) AlGaN multiple-quantum-well lasers2006
- Author(s)
  Hideo Kawanishi, Masanori Senuma, Takeaki Nukui
- Journal Title
  
  Appl. Phys. Lett 89・4
  
  Pages: 41126-41126
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in Al_xGaN_<1-x>N2006
- Author(s)
  Hideo Kawanishi, Eiichiro Niikura, Mao Yamamoto, Shoichiro Takeda
- Journal Title
  
  Appl. Phys. Lett 89・25
  
  Pages: 251107-251107
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region2006
- Author(s)
  Hideo Kawanishi, Eiichiro Niikura, Mao Yamamoto
- Journal Title
  
  Appl. Phys. Lett, 89・8
  
  Pages: 81121-81121
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet ( λ ?240 nm) AlGaN multiple-quantum-well lasers2006
- Author(s)
  Hideo Kawanishi*, Masanori Senuma, and Takeaki Nukui
- Journal Title
  
  Appl. Phys. Lett. Vol.89
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet ( λ = 240 nm) AlGaN multiple-quantum-well lasers2006
- Author(s)
  Hideo Kawanishi, Masanori Senuma, Takeaki Nukui
- Journal Title
  
  Appl. Phys. Lett, 89・4
  
  Pages: 41126-41126
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] 深紫外AlGaN 多重量子井戸半導体レーザー光の光学的異方特性2006
- Author(s)
  川西英雄*、瀬沼正憲、貫井猛晶
- Journal Title
  
  日本光学会(応用物理学会)光学 35巻
  
  Pages: 265-267
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region2006
- Author(s)
  Hideo Kawanishi*, Masanori Senuma, Mao Yamamoto, Eiichiro Niikura, and Takeaki Nukui
- Journal Title
  
  Appl. Phys. Lett Vol.89
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ〓240 nm) AlGaN multiple-quantum-well lasers2006
- Author(s)
  Hideo Kawanishi, Masanori Senuma, Takeaki Nukui
- Journal Title
  
  Appl Phys. Lett 89,4
  
  Pages: 41126-41126
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] 深紫外AlGaN多重量子井戸半導体レーザー光の光学的異方特性2006
- Author(s)
  川西英雄, 瀬沼正憲, 貫井猛晶
- Journal Title
  
  日本光学会(応用物理学会) 35巻・5号
  
  Pages: 265-267
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] 深紫外AlGaN多重量子井戸半導体レーザー光の光学的異方特性2006
- Author(s)
  川西英雄、瀬沼正憲、貫井猛晶
- Journal Title
  
  日本光学会(応用物理学会)光学 35巻、5号
  
  Pages: 265-267
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region2006
- Author(s)
  Hideo Kawanishi, Eiichiro Niikura, Mao Yamamoto
- Journal Title
  
  Appl. Phys. Lett 89・8
  
  Pages: 81121-81121
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Experimental energy difference between heavy-or light-hole valence band and crystal-field split-off-hole valence band in AlxGaN1-xN2006
- Author(s)
  Hideo Kawanishi, Eiichiro Niikura, Mao Yamamoto, Shoichiro Takeda
- Journal Title
  
  Appl. Phys. Lett 89,25
  
  Pages: 251107-251107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] 紫外AlGaN多重量子井戸型半導体レーザ光の光学的異方特性2006
- Author(s)
  川西, 瀬沼, 貫井
- Journal Title
  
  光学(Japanese J.Optics) 35・5(掲載予定)
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Relationship between Excess Ga and Residual Oxides in Amorphous GaN Films Deposited by Compound Source Molecular Beam Epitaxy2005
- Author(s)
  N.Obinata, K.Sugimoto, K.Ijima, M.Ishibashi, S.Egawa, T.Honda, H.Kawanishi
- Journal Title
  
  Japan.J.Appl.Phys. 44・12
  
  Pages: 8432-8434
- NAID
  10016958670
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] 光励起によるAlGaN多重量子井戸型深紫外レーザーの発振特性-発振波長域240~ 360nm2005
- Author(s)
  川西英雄、高野隆好、瀬沼正憲、貫井猛晶
- Journal Title
  
  応用物理第74巻第11号
  
  Pages: 1462-1462
- NAID
  10016763487
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] 光励起によるAlGaN多重量子井戸型深紫外レーザの発振特性-発振波長240〜360nm-2005
- Author(s)
  川西, 高野, 瀬沼, 貫井
- Journal Title
  
  応用物理 74・11
  
  Pages: 1458-1462
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Structure and Properties of Deep-UV AIGaN MQW Laser
- Author(s)
  Hideo Kawanishi
- Journal Title
  
  Proceedings of Inow2008 (発行中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Structure and Properties of Deep-UV AlGaN MQW Laser
- Author(s)
  Hideo Kawanishi
- Journal Title
  
  Proceedings of iNOW2008 発行中
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Structure and Properties of Deep-UV AlGaN MQW Laser
- Author(s)
  Hideo Kawanishi
- Journal Title
  
  Proceedings of i-NOW2008 (印刷中)
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Invesigation on Conductivity at the Gan/AIN/SiC Subsrate interface for Vertical Nitraide Power FETs
- Author(s)
  Yuu Wakamiya*, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Physica Status Solidi (to be published)
- Data Source
  KAKENHI-PLANNED-18069009
[Patent] 窒化物半導体結晶の成長法、成長装置、および、プログラム2009
- Inventor(s)
  橋本英喜、堀内明彦、川西英雄
- Industrial Property Rights Holder
  本田技研工業、川西英雄
- Acquisition Date
  2009-04-23
- Overseas
- Data Source
  KAKENHI-PLANNED-18069009
[Patent] 窒化物半導体結晶の成長法、成長装置、および、プログラム2009
- Inventor(s)
  橋本英喜、堀内明彦、川西英雄
- Industrial Property Rights Holder
  本田技研工業、川西英雄
- Filing Date
  2009-04-23
- Data Source
  KAKENHI-PROJECT-17106005
[Patent] 窒化物半導体結晶の成長法、成長装置、および、プログラム2005
- Inventor(s)
  橋本英喜、堀内明彦、川西英雄
- Industrial Property Rights Holder
  本田技研工業、川西英雄
- Filing Date
  2005-08-31
- Data Source
  KAKENHI-PROJECT-17106005
[Patent] 窒化物半導体結晶の成長2005
- Inventor(s)
  橋本英喜, 堀内明彦, 川西英雄
- Industrial Property Rights Holder
  本田技研工業, 川西英雄
- Filing Date
  2005-08-31
- Data Source
  KAKENHI-PROJECT-17106005
[Patent] Growth of Nitrade Semiconductor Crystals2004
- Inventor(s)
  H. Hashimoto, A. Horiuchi, H. Kawanishi
- Industrial Property Rights Holder
  HONDA MOTOR CO.LTD, H. Kawanishi
- Filing Date
  2004-08-31
- Data Source
  KAKENHI-PROJECT-17106005
[Patent] Growth of Nitrade Semiconductor Crystals
- Inventor(s)
  H. Hashimoto, A. Horiuchi, H. Kawanishi
- Industrial Property Rights Holder
  HONDA MOTOR CO.LTD, H. Kawanishi
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Achievement of high hole-density by carbone-doped (0001) plane AlGaN epitaxial layerfor optical device applications2011
- Author(s)
  Hideo Kawanishi, Tatsuya Tomizawa
- Organizer
  2011 German-Japanese-Spain Joint Workshop on Frontier Photonics and Electronic material and Devices
- Place of Presentation
  Granada, Spain.
- Year and Date
  2011-05-17
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Carbon-doped high hole-density (0001)plane AlGaN epitaxial layer grown by LP Metal-Organic Vapor Phase pitaxy2011
- Author(s)
  Hideo Kawanishi, Tatsuya Tomizawa
- Organizer
  APWS-2011
- Place of Presentation
  Toba, Japan.
- Year and Date
  2011-05-26
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Achievement of High ole-Density by Carbon-Doped (0001) Plane AlGaN Epitaxial Layer for Optical Device Applications2011
- Author(s)
  H.Kawanishi, T.Tomizawa
- Organizer
  Workshop on Frontier Photonics and Electronic Material and Devices
- Place of Presentation
  Spain、Granada
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Carbon-doped p-type (0001)plane AlGaN (Al=0.06 to 0.50) with high hole density2011
- Author(s)
  Hideo Kawanishi, Tatsuya Tomizawa
- Organizer
  WOCSDTCE-2011
- Place of Presentation
  Catania, Italia
- Year and Date
  2011-05-31
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Acceptor Energy Level of Carbon in p-type AlGaN2011
- Author(s)
  Hideo Kawanishi, Tatsuya Tomizawa
- Organizer
  APWS-2011
- Place of Presentation
  Toba, Japan.
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] AlGaN系深紫外半導体レーザの現状と課題2010
- Author(s)
  川西英雄
- Organizer
  第115回微小光学研究会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] AlGaN系深紫外半導体レーザの現状と課題2010
- Author(s)
  川西英雄
- Organizer
  第115回微小光学研究会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Electroconductive control of AlGaN crystal growth on (0001) Al_2O_3 substrate2009
- Author(s)
  T.Takeda, T.Nakadate, H.Anzai, H.Kawanishi
- Organizer
  ICNS-8
- Place of Presentation
  韓国・済州島
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Epitaxial Growth of High Quality AlN on SiC or Al_2O_3 Substrate by Alternate Source-Feeding Low Pressure Metal-Organic Vapor Phase Epitaxy2009
- Author(s)
  T.Takeda, H.Kawanishi, H.Anzai, T.Nakadate
- Organizer
  APWS2009
- Place of Presentation
  中国・長家界
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Lasing characteristics of deep-UV and UV AlGaN MQW lasers operating from 230nm to 356nm spectr al region2009
- Author(s)
  H.Kawanishi
- Organizer
  WOCSDICE 2009
- Place of Presentation
  Spain Maraga
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] 高温AlNあるいは低温AlNによるAlGaNエピタキシャル層の結晶品質の差違(一般講演)2009
- Author(s)
  武田, 中館, 川西
- Organizer
  応用物理学会
- Place of Presentation
  富山
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] 高温AlNあるいは低温AlNによるAlGaNエピタキシャル層の結晶品質の差違(一般講演)2009
- Author(s)
  武田、中館、川西
- Organizer
  応用物理学会
- Place of Presentation
  富山
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Lasing characteristics of deep-UV and UV AlGaN MQW lasers operating from 230nm to 356nm spectral region2009
- Author(s)
  川西英雄
- Organizer
  APWS2009
- Place of Presentation
  中国・長家界
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] 交互供給エピタキシャル成長法と深紫外AlGaN多重量子井戸半導体レーザの真性光学異方特性(シンポジウム)2009
- Author(s)
  川西英雄
- Organizer
  応用物理学会
- Place of Presentation
  富山
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Epitaxial Growth of High Quality AlN on SiC or Al_2O_3 Substrate by Alternate Source-Feeding Low Pressure Metal-Organic Vapor Phase Epitaxy2009
- Author(s)
  T.Takeda, H.Kawanishi, H.Anzai, T.Nakadate
- Organizer
  APWS2009
- Place of Presentation
  中国・長家界
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Lasing characteristics of deep-UV and UV AlGaN MQW lasers operating from 230nm to 356nm spectral region2009
- Author(s)
  H.Kawanishi
- Organizer
  APWS2009
- Place of Presentation
  中国・長家界
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] 交互供給エピタキシャル成長法と深紫外AlGaN多重量子井戸半導体レーザの真性光学異方特性(シンポジウム)2009
- Author(s)
  川西英雄
- Organizer
  応用物理学会
- Place of Presentation
  富山
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Electroconductive control of AlGaN crystal growth on(0001)Al_2O_3 substrate2009
- Author(s)
  T.Takeda, T.Nakadate, H.Anzai, H.Kawanishi
- Organizer
  ICNS-8
- Place of Presentation
  韓国・済州島
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Lasing characteristics of deep-UV and UV AlGaN MQW lasers operating from 230nm to 356nm spectral region2009
- Author(s)
  川西英雄
- Organizer
  WOCSDICE 2009
- Place of Presentation
  Spain Maraga
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Crystal Quality Control of AIN Template Grown on SiC Substrate using (AlN/GaN)Multi-Buffer Layer and Alternate Source-Feeding MO-VPE2008
- Author(s)
  Hideo Kawanishi
- Organizer
  2nd ISGN-2008
- Place of Presentation
  静岡、修善寺
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] AlN テンプレートの高品質化2008
- Author(s)
  武田、蔦川、安斉、川西
- Organizer
  2008年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Crystal quality control of AlN template grown on SiC substrate using (AlN/GaN) multi-buffer layer and alternate source-Feeding Mo-VPE2008
- Author(s)
  Hideo Kawanishi, Tomohito Takeda, Yusuke Tsutagawa, Fumio Hasegawa
- Organizer
  2^<nd> International Symposium on Growth of III-Nitrides (ISGN-2), Mo-49
- Place of Presentation
  Shuzenji, Shizuoka, Japan
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Experimental weak surface emission from (0001) c-lane AIGaN multiple quantum well structure in deep-ultaraviolet spectral region2008
- Author(s)
  Hideo Kawanishi,
- Organizer
  Worksshops on Frontier Optoelectronic Materialsand Devices
- Place of Presentation
  Hakone,Kanagawa,Japan
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Extremely Small Edge Dislocation Density of AIN Template Grown on 4H-SiC Substrate by ASFE-MOVPE with (AlN/GaN) MBL Structure2008
- Author(s)
  Hideo Kawanishi
- Organizer
  IC-MOVPE 2008
- Place of Presentation
  フランス、Metz
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] High Quality AIN Epitaxial Layer Grown on Sic or A12O3Substrate by Alternate Source-Feeding Low Pressure Metal-Organic Vapor Phase Epitaxy2008
- Author(s)
  Hideo Kawanishi
- Organizer
  IWN-2008
- Place of Presentation
  スイス、モントルー
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Experimental weak surface emission from (0001) c-lane AlGaN multiple quantum well structure in deep-ultaraviolet spectral region2008
- Author(s)
  Hideo, Kawanishi,
- Organizer
  Worksshops on Frontier Optoelectronic Materials and Devices
- Place of Presentation
  Hakone, Kanagawa, Japan
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Extremely Small Edge Dislocation Density of AlN Template Grown on 4H-SiC Substrate by ASFE-MOVPE with (AlN/GaN) MBL Structure2008
- Author(s)
  Hideo Kawanishi
- Organizer
  IC-MOVPE2008
- Place of Presentation
  フランス、Metz
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] High Quality A1N Epitaxial Layer Grown on SiC or Al_2O_3 Substrate by Alternate Source-Feeding Low Pressure Metal-Organic Vapor Phase Epitaxy2008
- Author(s)
  Hideo Kawanishi
- Organizer
  IWN-2008
- Place of Presentation
  スイス、モントルー
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Structure and Properties of Deep-UV AIGaN MQW Laser2008
- Author(s)
  Hideo Kawanishi
- Organizer
  iNOW2008
- Place of Presentation
  山梨河口湖
- Year and Date
  2008-08-07
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Crystal Quality Control of AIN Template Grown on SiC Substrate using (AIN/GaN) Multi-Buffer Layer and Alternate Source-Feeding MO-VPE2008
- Author(s)
  Hideo Kawanishi
- Organizer
  2nd ISGN-2008
- Place of Presentation
  静岡、修善寺
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Structure and Properties of Deep-UV AlGaN MQW Laser2008
- Author(s)
  Hideo Kawanishi
- Organizer
  iNOW2008
- Place of Presentation
  山梨河口湖
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Crystal quality control of AlN template grown on SiC substrate using (AlN/GaN) multi-buffer layer and alternate source-Feeding Mo-VPE2008
- Author(s)
  Hideo Kawanishi, Tomohito Takeda, Yusuke Tsutagawa, Fumio Hasegawa
- Organizer
  2nd International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Shuzenji, Shizuoka, Japan
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Experimental weak surface emission from (0001) c-lane AlGaN multiple quantum well structure in deep-ultaraviolet spectral region2008
- Author(s)
  Hideo Kawanishi
- Organizer
  Workshops on Frontier Optoelectronic Materials and Devices, T7
- Place of Presentation
  Hakone, Kanagawa, Japan
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Extremely Small Edge Dislocation Density of AlN Template Grown on 4H-SiC Substrate by ASFE-MOVPE with (AlN/GaN) MBL Structure2008
- Author(s)
  Hideo Kawanishi, Tomohito Takeda, Yusuke Tsutagawa
- Organizer
  14th Inernational Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  Metz, France
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Extremely Small Edge Dislocation Density of A1N Template Grown on 4H?SiC Substrate by ASFE?MOVPE with (A1N/GaN) MBL Structure2008
- Author(s)
  Hideo Kawanishi
- Organizer
  IC-MOVPE 2008
- Place of Presentation
  フランス、Metz
- Year and Date
  2008-06-03
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] 7th International Conference of Nitride semiconductors, MP322007
- Author(s)
  Eiichiro Niikura, Koichi Murakawa, Shoichiro Takeda, Fumio Hasegawa, Hideo Kawanishi
- Organizer
  7th International Conference of Nitride semiconductors
- Place of Presentation
  MP32, MGM Grand Hotel, Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Reduction of Threading Dislocations in AlGan/AIN/SiC Epitxial Layers by Tensile Strain in a-Axis Induced with the (AIN/GaN) Multi-Buffer-Layer2007
- Author(s)
  Kouichi Murakawa, Fumio Hasegawa, Hideo Kawanishi
- Organizer
  7th International Conference of Nitride semiconductors
- Place of Presentation
  MP29, MGM Grand Hotel, Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Dislocation Reduction in AIN Template grown on SiC by Tensile Strain induced by (AIN/GaN) Multi-Buffer-Layer2007
- Author(s)
  Kouichi Murakawa, Eiichiro Niikura, Fumio Hasegawa, Hideo Kawanishi
- Organizer
  The 3rd Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  PO-9, Jeoniju Core Riviera hotel, Jeonju, Korea
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Anisotropic Polarization of Deep-UV Lasing and Spontaneous Surface and Edge Emissions from c- and m-plane AlGaN2007
- Author(s)
  Hideo Kawanishi, Eiichiro Niikura, Masanori Senuma, Shoichiro Takeda
- Organizer
  The 3rd Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  MO1-4, Jeonju Core Riviera Hotel, Jeonju, Korea
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Reduction of Point Defects in N-AlGaN by an Altenate Source Feeding Metalorganic Vapor Phase Epitaxy2007
- Author(s)
  Kenichi Isono, Eiichiro Niikura, Kouichi Murakawa, Fumio Hasegawa, Hideo Kawanishi
- Organizer
  he 3rd Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  PO-13, Jeoniju Core Riviera hotel, Jeonju, Korea
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] M-mode lasing and anisotropic polarization property of AIGaN multiple quantum well lasers in deep-ultraviolet spectral region2007
- Author(s)
  Hideo Kawanishi, Masanori Senuma, Takeaki Nukui
- Organizer
  SPIE Photonics West
- Place of Presentation
  San Jose, California, USA
- Data Source
  KAKENHI-PROJECT-17106005

1. HONDA Tooru (20251671)

# of Collaborated Projects: 7 results

# of Collaborated Products: 1 results
2. HASEGAWA Fumio (70143170)

# of Collaborated Projects: 3 results

# of Collaborated Products: 22 results
3. 坂口孝浩 (70215622)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. SAKAMOTO Tesuo (20313067)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. YOSHIE Osamu (50090577)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. NAKAZAWA Eiichiro (60227767)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

KAWANISHI Hideo 川西 英雄

Research Projects

Research Products

Co-Researchers

Growth of High Quality AlGaN and its Application to Deep UV LED and LDPrincipal Investigator

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Research on Deep-UV Semiconductor Laser Lasing in 205～250nm RegionPrincipal Investigator

Principal Investigator

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Research Institution

青・紫外域発光素子用BAlGaInN/GaN系多層膜と量子井戸の形成とデバイス化Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

青・紫外域発光素子用BAlGaN系多層膜と量子井戸の形成とデバイス化Principal Investigator

Principal Investigator

Project Period (FY)

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Review Section

Research Institution

BAlGaN/AlN High Efficient UV Emitting Devices in 200nm 355nm RegionPrincipal Investigator

Principal Investigator

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Research Institution

Basic investigation of optical electrical integrated circuit adapting extreme environmentPrincipal Investigator

Principal Investigator

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Fundamental Research of Ultra-Violet Semiconductor Laser Diode.Principal Investigator

Principal Investigator

Project Period (FY)

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Research Institution

[Journal Article] AlGaN系深紫外半導体レーザの現状と課題2010

Author(s)

Journal Title

Data Source

[Journal Article] AlGaN系深紫外半導体レーザの現状と課題2010

Author(s)

Journal Title

Data Source

[Journal Article] AlGaN系深紫外半導体レーザの現状と課題2010

Author(s)

Journal Title

Data Source

[Journal Article] AlGaN系深紫外半導体レーザの現状と課題2010

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Data Source

[Journal Article] Investigation on Conductivity at the Gan/ATN/SiC Subsrate interface for Vertical Nitraide Power FETs2008

Author(s)

Journal Title

Data Source

[Journal Article] Investigation on Conductivity at the Gan/AIN/SiC Subsrate interface for Vertical2008

Author(s)

Journal Title

Data Source

[Journal Article] Structure and properties of Deep-UV ATGaN MQW laser2008

Author(s)

Journal Title

Data Source

[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007

Author(s)

Journal Title

Data Source

[Journal Article] Improvement of Crystal Quality of n-AlGaN by Alternate-Source-Feeding Metal Organic Vapor Phase Epitaxy2007

Author(s)

KAWANISHI Hideo 川西英雄