MUROTA Junichi 室田淳一

… Alternative Names

室田淳一ムロタジュンイチ

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Researcher Number	70182144
Other IDs
External Links
Affiliation (Current)	2025: 東北大学, マイクロシステム融合研究開発センター, 学術研究員
Affiliation (based on the past Project Information) *help	2013: 東北大学, 電気通信研究所, 教授 2011: 東北大学, 電気通信研究所, 教授 1994 – 2009: TOHOKU UNIVERSITY,RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION,PROFESSOR, 電気通信研究所, 教授 1991 – 1993: 東北大学, 電気通信研究所, 助教授 1988 – 1989: 東北大学, 電気通信研究所, 助教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / 電子材料工学 / Electronic materials/Electric materials / Applied materials science/Crystal engineering / 電子デバイス・機器工学 / Science and Engineering Except Principal Investigator Applied materials science/Crystal engineering / 電子デバイス・機器工学 / Electronic materials/Electric materials / 電子材料工学 … More / Electron device/Electronic equipment / Science and Engineering / 計算機工学 / Applied materials science/Crystal engineering / System engineering / 電子機器工学 / 情報工学 / 表面界面物性 Less
Keywords	Principal Investigator IV族半導体 / CVD / SiGeC / 原子層成長 / 極微細デバイス / 原子層エッチング / ヘテロ構造 / シリコン / HBT / MOS … More / SiGe / ドーピング / 水素終端 / SiH_4 / B / P / Impurity Doping / エピタキシャル成長 / Si / GeH_4 / MOSFET / 人工結晶 / 原子層積層 / ヘテロデバイス / 原子層 / ゲルマニウム / 高選択異方性エッチング / 不純物拡散 / in-situ不純物ドーピング / CVD低温選択成長 / 不純物ドーピング / 低温ヘテロエピタキシャル成長 / ラングミュア吸着・反応 / W低温選択成長 / 表面水素終端 / ラングミュア吸着 / 一原子層熱窒化 / 3-dimensional structure / epitaxial growth / chemical vapor deposition / artificial crystal / atomic layer growth / heterostructure / group-IV semiconductor / MBE / 立体加工 / contact resistance / atomic layer / impurity doping / IV group semiconductor / CDV / IV族半導体結晶 / 半導体接触抵抗 / 金属 / High Selective Anisotropic Etching / Impurity Diffusion / in-situ Impurity Doping / CVD Low-Temperature Selective Growth / Low-Temperature Heteroepitaxial Growth / Hydrogen Termination / Atomic-Layer Etching / Atomic-Layer Growth / Ultrasmall Devices / Group IV Semiconductor / Langmuir-type Adsorption and Reaction / 表面処理 / Langmuir-type Adsorption / Low Temperature Selective Deposition of W / Ultra small Devices / Plasma Surface Treatment / Flash Heating CVD / Si-Based Superlattice Devices / Atomically Controlling CVD / Si極薄窒化膜 / ド-ピング制御 / 超微細MOSFET / Langmuir型吸着 / 不純物ド-ピング / プラズマ表面処理 / 瞬時加熱CVD法 / Si系超格子デバイス / 原子制御CVD装置 / Resonant Tunneling / Flash Heating / Chemical Vapor Deposition / Atomic Layr Epitaxy / 集積回路 / 共鳴トンネル / 瞬時加熱 / Ultrasmall Device / Heterodevice / Heterostructure / Silicon-Germanium / Silicon / 超微細デバイス / シリコン-ゲルマニウム / 原子層ドーピング / 化学気相成長(CVD) / ラングミュア型 / ボロン / リン / エピタキシャル / 高精度エッチング / 選択成長 / WF_6 / ド-ピング / タングステン / W低温選択的成長 … More Except Principal Investigator SiGe / CMOS / Si / MOSFET / ヘテロ構造 / ECRプラズマ / ML-MOSFET / SOI / IV族半導体 / エピタキシャル成長 / CVD / ECR Plasma / ラングミュア吸着 / Ge / 集積回路 / シリコン / 原子層エッチング / 集積化 / SBSI / TML-MOSFET / N / C / Ultrasmall MOS / Silicon / 分数原子層 / イオン誘起反応 / 自己制限 / 極微細MOS / ゲルマニウム / 低エネルギーAr^+イオン照射 / 自己制限型吸着 / フローティングゲート / ニューロチップ / 室温動作 / 量子デバイス / チャージポンピング法 / 原子層制御 / プラズマ / ホットキャリア / 正確動作 / ADコンバ-タ- / シナプス素子 / ニュ-ロン素子 / ニュ-ロン計算機 / Accurate Function / Threshold / C MOS / Synapse Device / Neuron Device / AD-Converter / Integration / Neuron Computer / ヒステリシスしきい値素子 / 解離再集合体 / ヒドラ / LSI化ニューロン回路 / しきい値特性 / CMDS / resonant tunneling / quantum effect / electronic-band modulation / atomic-layer control / group-IV semiconductor / 局所歪 / 量子トンネル構造 / 共鳴トンネル / 量子効果 / 電子帯変調 / HfNO / lateral selective etching of SiGe / hydoro-nitric acid / PtSi / HfON / i-SiGe横方向選択エッチング / フッ硝酸溶液 / HfNO薄膜 / SiGe横方向選択エッチング / フッ硝酸 / ML-MOFET / high-k gate insulator / AlN_xO_y thin film / ECR sputtering / etching selectivity of SiGe / short channel effect / sub-10nm / 原子層制御窒素ドープエピタキシャル層 / 駆動電流 / サブ10ナノメータ / 高誘電率ゲート絶縁膜 / AlNxOy薄膜 / ECRスパッタ / SiGe選択エッチング / 短チャネル効果 / サブ10ナノメーター / heterostructure / resonant tunneling diode / atomic layer / テヘロ構造 / 共鳴トンネルダイオード / 原子層 / hot carrier / low-frequency noise / high speed / low power / hetero-structure / 極浅ソース・ドレイン / ヘテロ界面準位 / 低周波雑音 / 超高速 / 低消費電力 / Germanium / Low-Energy Ion Irradiation / Chlorine / Self-Limited / Atomic-Layr-Etching / 低エネルギーイオン照射 / 塩素 / 自己制限型 / germanium / Low-Energy-Ar^+ Ion Irradiation / ECR chlorine plasma / Substrate Orientation Dependence / Self-Limited Adsorption / Atomic-Layr Etching / ECR塩素プラズマ / 面方位依存性 / Hebbian Learning / Silicon IC / Learning Function / Floating Gate / Integrated Circuit / Boltzmann Machine / Analog Memory / Neuro Chip / ボルツマンマシン / ヘブ学習 / シリコンIC / 学習機能 / ボルツマンマシーン / アナログメモリー / Ion Irradiation / Radical / Adsorption & Reaction / Epitaxy / Etching / Plasma CVD / Selectivity / イオン照射 / ラジカル / 吸着・反応 / エピタキシ / エッチング / プラズマCVD / 選択性 / MOS devices / Vacuum microelectronics / Cold cathode / Field emission / Tunnel effect / MOSデバイス / 真空マイクロエレクトロニクス / 冷陰極 / 電界放射 / トンネル効果 / Integrated circuit / Variable synapse / Floating gate / Analog memory / Neuro chip / 分散記憶 / 非対称結合神経回路網 / 対称結合神経回路網 / ニュ-ロチップ / 可変シナプス / アナログメモリ / Nitrogen Addition / Ultraclean / Selective Epitaxy / Anisotropy / Perfect Selectivity / Etching Delay Time / Langmuir's Adsorption / 窒素添加効果 / 超高清浄化 / 選択エピタキシ / 異方性 / 完全選択性 / エッチング遅れ時間 / 巡回セールスマン問題 / Dコンバータ / A / ニューロン回路網 / ドーピング / SiGe混晶 / 化学気相成長 / MOS / ヘテロ界面 / 電子デバイス・機器 / 半導体超微細化 / マイクロ・ナノデバイス / 量子ヘテロ構造 / 量子へテロ構造 / 超高速光・電子デバイス / 原子精度要素プロセス / 高性能トランジスタ / 極微細構造 / シリコンゲルマニウム / 光物性 / 電子物性 / 光エレクトロニクス / 人工IV族半導体 / XPS / 高清浄雰囲気 / 表面吸着・反応 / Arイオン照射 / 励起水素 / Si窒化膜 / 偏析 / 不純物拡散 / SiGe半導体 / シグモイド特性 Less

Process development for high-performance highly-strained quantum-heterostructure resonant-tunneling devices of group-IV semiconductors
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Creation of High-Carrier-Concentration and High-Mobility Artificial Crystal of Group IV Semiconductors by Atomically Controlled CVD ProcessingPrincipal Investigator
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Group IV Semiconductor Quantum Device Fabrication for Room Temperature Operation
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Development of Atomically Controlled Plasma Processing for GroupIV Quantum Device Fabrication
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
Pioneer study on hetero-interfaces to realize non-classical nano-hetero-devices
- Principal Investigator
  
  TSUCHIYA Toshiaki
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Shimane University
Electronicband modulation and formation of quantum tunneling structures by atomic-layer control of group-IV semiconductors
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Creation of Artificial Crystal with Atomically-Controlled Group-IV Semiconductor HeterostructuresPrincipal Investigator
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
A Study on Novel Multi-Layer Channel MOSFET/SOI with 10 nm Gate Length and Beyond
- Principal Investigator
  
  SAKAI Tetsushi
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Formation of Very Low Contact Resistance between Metal and Semiconductor using Semiconductor Structures with Ultra High Carrier ConcentrationPrincipal Investigator
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
New device structure of sub-10nm Si MOSFET/SOI
- Principal Investigator
  
  SAKAI Tetsushi
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
Fabrication of Resonant Tunneling Diode by Atomic Layer-by-Layer Epitaxial Growth of Si-Ge-C-N System
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
人工IV族半導体の物性制御と超高速光・電子デバイスへの応用
- Principal Investigator
  
  白木靖寛
- Project Period (FY)
  1999 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Musashi Institute of Technology
  The University of Tokyo
人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発Principal Investigator
- Principal Investigator
  
  室田淳一
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
Si-Ge系エピタキシャル成長による超高濃度不純物半導体の形成とその物性Principal Investigator
- Principal Investigator
  
  室田淳一
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
IV族半導体ヘテロ構造におけるホットキャリアの挙動に関する研究
- Principal Investigator
  
  土屋敏章
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Shimane University
Research on extremely low-power and scaled Si-based CMOS devices making the best use of SiGe and SOI
- Principal Investigator
  
  TSUCHIYA Toshiaki
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Shimane University
Development of SiGe System MOS-HBT Technology for Fabrication of High Integrated Communication SystemPrincipal Investigator
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tohoku University
IV族半導体極微細構造形成プロセスに関する研究Principal Investigator
- Principal Investigator
  
  室田淳一
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Tohoku University
Si系アモルファス絶縁薄膜の表面構造敏感エッチングと原子制御
- Principal Investigator
  
  松浦孝
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
次世代超LSI材料SiGeを拡散源としたSi中への不純物拡散の研究
- Principal Investigator
  
  MIKOSHIBA Norio
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Tokyo Polytechnic University
IV族半導体薄膜へのタングステンのデルタド-ピングPrincipal Investigator
- Principal Investigator
  
  室田淳一
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
IV族半導体極微細構造形成プロセスに関する研究Principal Investigator
- Principal Investigator
  
  室田淳一
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tohoku University
IV族半導体極微細構造形成プロセスに関する研究Principal Investigator
- Principal Investigator
  
  室田淳一
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tohoku University
Langmuir Adsorption and Reaction Control in Process for Fabrication of Ultrasmall Group IV Semiconductor DevicesPrincipal Investigator
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
Development of Atomically Controlling CVD Apparatus for Fabrication of Si-Based Superlattice DevicesPrincipal Investigator
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
A Study on Elementary Process of Self-limited Surface Adsorption and Reaction Si Atomic Layr Etching
- Principal Investigator
  
  MATSUURA Takashi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
A Development of Atomic Layr Etching Technology of Si with Self-limited Mechanism for Directional Ultrafine Pattern Fabrication
- Principal Investigator
  
  MATSUURA Takashi
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
IC neuro chip with analog synapses for a correct reaction neural network
- Principal Investigator
  
  SAWADA Yasuji
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  System engineering
- Research Institution
  Tohoku University
A STUDY OF ULTRASMALL DEVICE CONTAINING NANOMETER-CONTROLLED Si-Ge HETEROLAYERPrincipal Investigator
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  TOHOKU UNIVERSITY
Studies of cold cathode for vacuum microelectronics
- Principal Investigator
  
  YOKOO Kuniyoshi
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子機器工学
- Research Institution
  TOHOKU UNIVERSITY
STUDY ON DEVELOPMENT OF ATOMIC LAYER CONTROLLED CVD APPARATUS FOR FABRICATION PROCESS OF EXTREMELY LARGE SCALE INTEGRATED CIRCUITSPrincipal Investigator
- Principal Investigator
  
  MUROTA Junnichi
- Project Period (FY)
  1992 – 1994
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  TOHOKU UNIVERSITY
Selectivity inversion in plasma processing at low temperatures
- Principal Investigator
  
  MATSUURA Takashi
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Tohoku University
DEVELOPMENT OF ANISOTROPIC ETCHING TECHNOLOGY WITH PERFECT SELECTIVITY USING LANGMUIR'S ADSORPTION LAYER
- Principal Investigator
  
  MATSUURA Takashi
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  TOHOKU UNIVERSITY
LSI Implementation of Correct Reaction Neural Network with Variable Synap ses
- Principal Investigator
  
  SAWADA Yasuji
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  情報工学
- Research Institution
  TOHOKU UNIVERSITY
集積化ニュ-ロン計算機の基本的研究
- Principal Investigator
  
  SAWADA Yasuji
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tohoku University
集積化ニューロン計算機の基礎的研究
- Principal Investigator
  
  沢田康次
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tohoku University
Research Fabrication of Integrated Neural Computing Circuits
- Principal Investigator
  
  SAWADA Yasuji
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  計算機工学
- Research Institution
  TOHOKU UNIVERSITY

All 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002

All Journal Article Presentation Patent

[Journal Article] Epitaxial Growth of B-Doped Si on Si(100) by Electron-Cyclotron- Resonance Ar Plasma Chemical Vapor Deposition in a SiH_4-B_2H_6-H_2 Gas Mixture without Substrate2014
- Author(s)
  Y.Abe, M.Sakuraba and J.Murota
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.557 Pages: 10-13
- DOI
  10.1016/j.tsf.2013.08.118
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_<1-x>Ge_x/Si Resonant Tunneling Diode2014
- Author(s)
  T.Kawashima, M.Sakuraba and J.Murota
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.557 Pages: 302-306
- DOI
  10.1016/j.tsf.2013.08.124
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Epitaxial Growth of Si1-xGex Alloys and Ge on Si(100) by Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition without Substrate Heating2014
- Author(s)
  N.Ueno, M.Sakuraba, S.Sato and J.Murota
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.557 Pages: 31-35
- DOI
  10.1016/j.tsf.2013.11.023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003, KAKENHI-PROJECT-25330279
[Journal Article] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating2013
- Author(s)
  Y.Abe, S.Kubota, M.Sakuraba, J.Murota and S.Sato
- Journal Title
  
  ECS Trans.
  
  Volume: Vol.58, No.9 Issue: 9 Pages: 223-228
- DOI
  10.1149/05809.0223ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003, KAKENHI-PROJECT-25330279
[Journal Article] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing2013
- Author(s)
  M.Sakuraba and J.Murota
- Journal Title
  
  ECS Trans.
  
  Volume: Vol.58, No.9 Issue: 9 Pages: 195-200
- DOI
  10.1149/05809.0195ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Formation and Characterization of Strained Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating2013
- Author(s)
  N.Ueno, M.Sakuraba, J.Murota and S.Sato
- Journal Title
  
  ECS Trans.
  
  Volume: Vol.58, No.9 Issue: 9 Pages: 207-211
- DOI
  10.1149/05809.0207ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003, KAKENHI-PROJECT-25330279
[Journal Article] Behavior of N Atoms after Thermal Nitridation of Si_<1-x>Ge_x Surface2012
- Author(s)
  T.Kawashima, M.Sakuraba, B.Tillack and J.Murota
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.520 Issue: 8 Pages: 3392-3396
- DOI
  10.1016/j.tsf.2011.10.108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Fabrication of High-Ge-Fraction Strained Si_<1-x>Ge_x/Si Hole Resonant Tunneling Diode Using Low-Temperature Si_2H_6 Reaction for Nanometer-Order Ultrathin Si Barriers2011
- Author(s)
  K.Takahashi、M.Sakuraba, J.Murota
- Journal Title
  
  Solid-State Electron. Vol.60
  
  Pages: 112-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors2011
- Author(s)
  M.Sakuraba and J.Murota
- Journal Title
  
  ECS Trans.
  
  Volume: Vol.41, No.7 Issue: 7 Pages: 309-314
- DOI
  10.1149/1.3633311
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode2011
- Author(s)
  M.Sakuraba and J.Murota
- Journal Title
  
  ECS Trans.
  
  Volume: Vol.41,No.7 Issue: 7 Pages: 337-343
- DOI
  10.1149/1.3633314
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Capture/Emission Process of Carriers in Heterointerface Traps Observed in the Transient Charge Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs2011
- Author(s)
  T.Tsuchiya、K.Yoshida、M.Sakuraba, J. Murota
- Journal Title
  
  Key Engineering Materials Vol.470
  
  Pages: 201-206
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Electrical Characteristics of Thermal CVD B-Doped Si Films on Highly Strained Si Epitaxially Grown on Ge(100) by Plasma CVD without Substrate Heating2010
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Heavy B Atomic-Layer Doping in Si Epitaxial Growth on Si(100) Using Electron-Cyclotron-Resonance Plasma CVD2010
- Author(s)
  T. Nosaka、M. Sakuraba、B. Tillack, J. Murota
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Heavy Atomic-Layer Doping of Nitrogen in Si_<1-x>Ge_x Film Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD2010
- Author(s)
  T.Kawashima、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic Layer Doping2010
- Author(s)
  Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Heavy Carbon Atomic-Layer Doping at Si_<1-x>Ge_x/Si Heterointerface2010
- Author(s)
  T.Hirano、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System2009
- Author(s)
  H.Tanno、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Solid-State Electron. Vol.53
  
  Pages: 877-879
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex/Si(100) Heterostructure2009
- Author(s)
  T. Seo、K. Takahashi、M. Sakuraba, J. Murota
- Journal Title
  
  Solid-State Electron Vol.53
  
  Pages: 912-915
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2009
- Author(s)
  T.Seo、K.Takahashi、M.Sakuraba, J.Murota
- Journal Title
  
  Solid-State Electron. Vol.53
  
  Pages: 912-915
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2009
- Author(s)
  T. Seo, K. Takahashi, M. Sakuraba, J. Murota
- Journal Title
  
  Solid-State Electron. Vol. 53
  
  Pages: 912-915
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360002
[Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2009
- Author(s)
  T. Seo, K. Takahashi, M. Sakuraba and J. Murota
- Journal Title
  
  Solid State Electron accepted
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0. 4) Si/Strained Si1-xGex/Si(100) Heterostructure2008
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Journal Title
  
  Appl. Surf. Sci Vol.254
  
  Pages: 6265-6267
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] "High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth,"2008
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, and J. Murota
- Journal Title
  
  Thin Solid Films vol. 517, no. 1
  
  Pages: 346-349
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Structural Change of Atomic-Order Nitride Formed on Si_<1-x>Ge_x(100) and Ge(100) by Heat Treatment2008
- Author(s)
  N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 219-221
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD2008
- Author(s)
  M. Sakuraba, D. Muto, M. Mori, K. Sugawara, J. Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 10-13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si1-xGex/Si(100) Heterostructure2008
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 110-112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Behavior of N Atoms in Atomic-Order Nitrided Si_<0.5>Ge_<0.5>(100)2008
- Author(s)
  N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.254、No.19
  
  Pages: 6021-6024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Heavy Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition2008
- Author(s)
  H.Tanno、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.254、No.19
  
  Pages: 6086-6089
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD2008
- Author(s)
  M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 10-13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure"2008
- Author(s)
  T.Seo、M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.254、No.19
  
  Pages: 6265-6267
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth2008
- Author(s)
  S.Takehiro、M.Sakuraba、T.Tsuchiya, J.Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 346-349
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Local Strain in Si/Si_<0.6>Ge_<0.4>/Si(100) Heterostructures by Stripe-Shape Patterning2008
- Author(s)
  J.Uhm、M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 300-302
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008
- Author(s)
  T. Seo, M. Sakuraba and J. Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 110-112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008
- Author(s)
  T. Seo, M. Sakuraba, J. Murota
- Journal Title
  
  Thin Solid Films Vol. 517
  
  Pages: 110-112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360002
[Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008
- Author(s)
  T.Seo、M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 110-112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Si Epitaxial Growth on Self- Limitedly B Adsorbed Si_<1-x>Ge_x (100) by Ultraclean Low-Pressure CVD System2008
- Author(s)
  K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 229-231
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008
- Author(s)
  T. Seo, M. Sakuraba, J. Murota
- Journal Title
  
  Appl.Surf.Sci. Vol. 254
  
  Pages: 6265-6267
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360002
[Journal Article] Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low-Pressure CVD System2008
- Author(s)
  T.Yokogawa、K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
- Journal Title
  
  Appl.Surf.Sci. Vol.254、No.19
  
  Pages: 6090-6093
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2008
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 346-349
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Strain Control of Si and Si_<1-x>Ge_x Layers in the Si/Si_<1-x>Ge_x/Si Heterostructures by Stripe-Shape Patterning for Future Si-Based Devices(Invited Paper)2007
- Author(s)
  J. Murota
- Journal Title
  
  ECS Trans. 11
  
  Pages: 91-99
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Hot Carrier Degradation of SiGe/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps2007
- Author(s)
  T.Tsuchiya、S.Mishima、M.Sakuraba, J.Murota
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.46、No.8A
  
  Pages: 5015-5020
- NAID
  40015538121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si1-xGex Epitaxially Grown on Si(100) (Invited Paper)2007
- Author(s)
  M. Sakuraba、R. Ito、T. Seo, J. Murota
- Journal Title
  
  ECS Trans Vol.11
  
  Pages: 131-139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 5015-5020
- NAID
  40015538121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Epitaxial growth of highly strained Si on relaxed Ge/Si(100) using ECR plasma CVD without substrate heating2007
- Author(s)
  K. Sugawara, M. Sakuraba, J. Murota
- Journal Title
  
  Semicond. Sci. Technol Vol.22
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100)2007
- Author(s)
  M.Sakuraba、R.Ito、T.Seo, J.Murota
- Journal Title
  
  ECS Trans. Vol.11、No.6
  
  Pages: 131-139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Strain Control of Si and Si_<1-x>Ge_x Layers in the Si/Si_<1-x>Ge_x/Si Heterostructures by Stripe-Shape Patterning for Future Si-Based Devices2007
- Author(s)
  J.Murota、J.Uhm, M.Sakuraba
- Journal Title
  
  ECS Trans. Vol.11、No.6
  
  Pages: 91-99
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Epitaxial Growth of Highly Strained Si on Relaxed Ge/Si(100) Using ECR Plasma CVD without Substrate Heating2007
- Author(s)
  K. Sugawara, M. Sakuraba and J. Murota
- Journal Title
  
  Semicond. Sci. Technol. Vol.22, No.1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] "Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps,"2007
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Journal Title
  
  Jpn. J. Appl. Phys. vol. 46, no. 8A
  
  Pages: 5015-5020
- NAID
  40015538121
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Hole tunneling properties in resonant tunneling diodes with Si/Strained Si0. 8Ge0. 2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD2007
- Author(s)
  R. Ito, M. Sakuraba, J. Murota
- Journal Title
  
  Semicond. Sci. Technol Vol.22
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si (100)2007
- Author(s)
  M. Sakuraba, R. Ito, T. Seo, J. Murota
- Journal Title
  
  ECS Trans. Vol. 11(Invited Paper)
  
  Pages: 131-139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360002
[Journal Article] Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition (Invited Review Paper)2006
- Author(s)
  J.Murota, et al.
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.45 No.9A
  
  Pages: 6767-6785
- Data Source
  KAKENHI-PROJECT-16360002
[Journal Article] Photo detection characteristics of Si/Si_<1-x>Ge_x/Si p-i-n diodes integrated with optical waveguides2006
- Author(s)
  A.Yamada, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 399-401
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  
  Pages: 83-84
- NAID
  10018312310
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] "SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生,"2006
- Author(s)
  土屋敏章,櫻庭政夫,室田淳一
- Journal Title
  
  電気学会論文誌C,IEEJ Trans. EIS. vol. 126, no. 9
  
  Pages: 1101-1106
- NAID
  10019289991
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006
- Author(s)
  Toshiaki Tsuchiya, Seiji Mishima, Masao Sakuraba, Junichi Murota
- Journal Title
  
  IEEE Semiconductor Interface Specialist Conference (SISC 2006)
  
  Pages: 15-15
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
  
  Pages: 21-24
- NAID
  110004813188
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Atomic layer processing for doping of SiGe2006
- Author(s)
  B.Tillack, Y.Yamamoto, D.Bolze, B.Heinemann, H.Ruecker, D.Knoll, J.Murota, W.Mehr
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 279-283
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition (Invited Review Paper)2006
- Author(s)
  J.Murota et al.
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.45, No.9A
  
  Pages: 6767-6785
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360002
[Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  Thin Solid Films Vol.508・Issues 1-2
  
  Pages: 326-328
- NAID
  120005587465
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] "Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs,"2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Journal Title
  
  Thin Solid Films Vol. 508, Issues 1-2
  
  Pages: 326-328
- NAID
  120005587465
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET2006
- Author(s)
  竹廣忍, 櫻庭政夫, 室田淳一, 土屋敏章
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS vol.126・no.9
  
  Pages: 1079-1082
- NAID
  10019289946
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Strain relaxation by stripe patterning in Si/Si_<1-x>Ge_x/Si(100) hetereostructures2006
- Author(s)
  J.Uhm, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 239-242
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si_<1-x-y>Ge_xC_y film deposited by ultraclean LPCVD2006
- Author(s)
  H.Shim, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 36-39
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs2006
- Author(s)
  T.Tsuchiya, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 326-328
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si_<1-x>Ge_x epitaxial films2006
- Author(s)
  H.-S.Cho, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 301-304
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition (Invited Review Paper)2006
- Author(s)
  J.Murota et al.
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.45 No.9A
  
  Pages: 6767-6785
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360002
[Journal Article] ,"BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET,"2006
- Author(s)
  竹廣忍,櫻庭政夫,室田淳一,土屋敏章
- Journal Title
  
  電気学会論文誌C,IEEJ Trans. EIS. vol. 126, no. 9
  
  Pages: 1079-1082
- NAID
  10019289946
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Carbon effect on strain compensation in Si_<1-x-y>Ge_xC_y films epitaxially grown on Si(100)2006
- Author(s)
  H.Nitta, J.Tanabe, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 140-142
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生2006
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS vol.126・no.9
  
  Pages: 1101-1106
- NAID
  10019289991
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD2006
- Author(s)
  K.Sugawara, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 143-146
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled Ge Epitaxial Growth on Si(100) in Ar-Plasma-Enhanced GeH_4 Reaction2005
- Author(s)
  K.Sugawara, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 69-72
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper)2005
- Author(s)
  J.Murota et al.
- Journal Title
  
  Proceeding of Int.Symp.ULSI Process Integration IV (Spring Meeting of the Electrochem.Soc., Canada, May, 15-20, 2005) PV2005-06
  
  Pages: 53-66
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Integration of Si p-i-n Diodes for Light Emitter and Detector with Optical Waveguides2005
- Author(s)
  A.Yamada, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 435-438
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper)2005
- Author(s)
  J.Murota, M.Sakuraba, B.Tillack
- Journal Title
  
  Proc.Int.Symp.ULSI Process Integration IV (Spring Meeting of Electrochem.Soc., Quebec City, Canada, May 15-20, 2005)
  
  Pages: 53-66
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper)2005
- Author(s)
  J.Murota et al.
- Journal Title
  
  Proceedings of Int.Symp.ULSI Process Integration IV (Spring Meeting of The Electrochem.Soc., Canada, May 15-20, 2005) PV 2005-06
  
  Pages: 53-66
- Data Source
  KAKENHI-PROJECT-16360002
[Journal Article] Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper)2005
- Author(s)
  J.Murota et al.
- Journal Title
  
  Proceedings of Int. Symp. ULSI Process Integration IV (Spring Meeting of The Electrochem. Soc, Canada, May 15-20, 2005) PV 2005-06
  
  Pages: 53-66
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360002
[Journal Article] Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper)2005
- Author(s)
  J.Murota et al.
- Journal Title
  
  Proc. Int. Symp. ULSI Process Integration IV (Spring Meeting of Electrochem. Soc., Canada, May 15-20, 2005) PV 2005-06
  
  Pages: 53-66
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Epitaxial Growth of SiGe Alloy and Its Atomic Layer Control (Technical Review Paper)(in Japanese)2005
- Author(s)
  J.Murota, M.Sakuraba
- Journal Title
  
  VACUUM (The Vacuum Society of Japan) Vol.48, No.1
  
  Pages: 8-12
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Electrical Properties of N Atomic Layer Doped Si Epitaxial Films Grown by Ultraclean Low-Pressure Chemical Vapor Deposition2005
- Author(s)
  Y.Jeong, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 121-124
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using Electron Cyclotron Resonance Plasma2005
- Author(s)
  M.Mori, T.Seino, D.Muto, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 65-68
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Separation by Bonding Si Islands for Advanced CMOS LSIs Application2005
- Author(s)
  T.Yamazaki, S.Ohmi, S.Morita, H.Ohri, J.Murota, M.Sakuraba, H.Ohmi, T.Sakai
- Journal Title
  
  IEICE Trans.Electron Vol.E88-C
  
  Pages: 656-661
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Sidewall Protection by Nitrogen, Oxygen in Poly-Si_<1-x>Ge_x Anisotropic Etching Using Cl_2/N_2/O_2 Plasma2005
- Author(s)
  H.-S.Cho, S.Takehiro, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 239-243
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Separation by Bonding Si Islands (SBSI) for LSI Applications2005
- Author(s)
  T.Yamazaki, S.Ohmi, S.Morita, H.Ohri, J.Murota, M.Sakuraba, H.Omi, Y.Takahashi, T.Sakai
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 59-63
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Electrical Properties of W Delta Doped Si Epitaxial Films Grown on Si(100) byUltraclean Low-Pressure Chemical Vapor Deposition2005
- Author(s)
  T.Kurosawa, T.Komatsu, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 125-129
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper)2005
- Author(s)
  J.Murota et al.
- Journal Title
  
  Proc.Int.Symp.ULSI Process Integration IV (Spring Meeting of Electrochem.Soc., Quebec City, Canada, May 15-20,2005)
  
  Pages: 53-66
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360002
[Journal Article] SiGe系エピタキシャル成長とその原子層制御2005
- Author(s)
  室田淳一, 櫻庭政夫
- Journal Title
  
  真空 48
  
  Pages: 8-12
- NAID
  10014381754
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Interfacial Reaction, Electrical Properties in Ni/Si, Ni/SiGe(C) Contacts2004
- Author(s)
  S.Zaima, O.Nakatsuka, A.Sakai, J.Murota, Y.Yasuda
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 215-221
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Proposal of a Multi-Layer Channel MOSFET : The Application of Selective Etching for Si/SiGe Stacked Layers2004
- Author(s)
  D.Sasaki, S.Ohmi, M.Sakuraba, J.Murota, T.Sakai
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 270-273
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Fabrication of 0.12-μm pMOSFETs on High Ge Fraction Si/Si_<1-x>Ge_x/Si(100) heterostructure with Ultrashallow Source/Drain Formed using B-Doped SiGe CVD2004
- Author(s)
  D.Lee, S.Takehiro, M.Sakuraba, J.Murota, T.Tsuchiya
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 254-259
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(1002004
- Author(s)
  M.Fujiu, K.Takahashi, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 206-209
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled Technology for Future Si-Based Devices2004
- Author(s)
  J.Murota, M.Sakuraba, B.Tillack
- Journal Title
  
  Solid State Phenomena Vol.95-96
  
  Pages: 607-616
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] In-situ B Doping of SiGe(C) Using BCl_3 in Ultraclean Hot-Wall LPCVD2004
- Author(s)
  Y.Kunii, Y.Inokuchi, A.Mariya, H.Kurokawa, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 68-72
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SoGe stacked layers2004
- Author(s)
  D, Sasaki, S, Ohmi, M.Sakuraba, J.Murota, T.Sakai
- Journal Title
  
  Appl.Surf.Sci.224 2004 270 283 224
  
  Pages: 270-273
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Journal Article] Atomically Controlled Technology for Future Si-Based Devices2004
- Author(s)
  J.Murota et al.
- Journal Title
  
  Solid State Phenomena 95-96
  
  Pages: 607-616
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled Technology for Future Si-Based Devices2004
- Author(s)
  J.Murota et al.
- Journal Title
  
  Solid State Phenomena 95-96
  
  Pages: 607-616
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360002
[Journal Article] Atomically Controlled Technology for Future Si-Based Devices2004
- Author(s)
  J.Murota et al.
- Journal Title
  
  Solid State Phenomena Vol.95-96
  
  Pages: 607-616
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360002
[Journal Article] Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth2004
- Author(s)
  D.Muto, M.Sakuraba, T.Seino, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 210-214
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_42004
- Author(s)
  Y.Jeong, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 197-201
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Formation of Heavily P-Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique2004
- Author(s)
  Y.Shimamune, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 202-205
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Relationship between Impurity (B or P), Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment2004
- Author(s)
  J.Noh, S.Takehiro, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 77-81
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] W Delta Doping in Si(100) Using Ultraclean Low-Pressure CVD2003
- Author(s)
  T.Kanaya, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.212-213
  
  Pages: 684-688
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Si Atomic Layer-by-Layer Epitaxial Growth Process Using Alternate Exposure of Si(100) to SiH_4 and to Ar Plasma2003
- Author(s)
  M.Sakuraba, D.Muto, T.Seino, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.212-213
  
  Pages: 197-200
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Direct Measurements of Trap Density in a SiGe/Si Hetero-Interface and Correlation between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs2003
- Author(s)
  T.Tsuchiya, Y.Imada, J.Murota
- Journal Title
  
  IEEE Trans.Electron Devices Vol.50, No.12
  
  Pages: 2507-2512
- NAID
  120002338621
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SiGe stacked layers2003
- Author(s)
  D.Sasaki, S.Ohmi, M.Sakurada, J.Murota, T.Sakai
- Journal Title
  
  Applied Surface Science 224
  
  Pages: 100-103
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Journal Article] Si Epitaxial Growth on SiH_3CH_3 Reacted Ge(100) and Intermixing between Si and Ge during Heat Treatment2003
- Author(s)
  K.Takahashi, M.Fujiu, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.212-213
  
  Pages: 193-196
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Contact Resistivity between Tungsten and Impurity (P and B)-Doped Si_<1-x-y>Ge_xC_y Epitaxial Layer2003
- Author(s)
  J.Noh, M.Sakuraba, J.Murota, S.Zaima, Y.Yasuda
- Journal Title
  
  Appl.Surf.Sci. Vol.212-213
  
  Pages: 679-683
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] A proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SiGe stacked layers2003
- Author(s)
  T.Sakai, S.ohmi, D.Sasaki, M.Sakurada, J.Murota
- Journal Title
  
  Abstracts of First International SiGe Technology and Device Meeting
  
  Pages: 31-32
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Journal Article] Atomic-Layer Doping in Si by Alternately Supplied NH_3 and SiH_42003
- Author(s)
  Y.Jeong, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Phys.Lett. Vol.82, No.20
  
  Pages: 3472-3474
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Work Function of Impurity-Doped Polycrystalline Si_<1-x-y>Ge_xC_y Film Deposited by Ultraclean Low-Pressure CVD2003
- Author(s)
  H.Shim, M.Sakuraba, T.Tsuchiya, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.212-213
  
  Pages: 209-212
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically controlled processing for group IV semiconductors2002
- Author(s)
  Junichi, Murota et al.
- Journal Title
  
  Surf.Interface Anal. 34
  
  Pages: 423-431
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Journal Article] Atomically controlled Heterostructure Growth of Group IV Semiconductors2002
- Author(s)
  J.Murota et al.
- Journal Title
  
  3rd Trends in Nano Technology International Conference
  
  Pages: 377-377
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Journal Article] Atomically Controlled Heterostructure Growth of Group IV Semiconductors2002
- Author(s)
  J.Murota et al.
- Journal Title
  
  3^<rd> Trends in Nano Technology Int.
  
  Pages: 377-377
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Journal Article] Atomically controlled processing for group IV semiconductors2002
- Author(s)
  Junichi Murota et al.
- Journal Title
  
  Surf. Interface Anal. 34
  
  Pages: 423-431
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Patent] 電界効果トランジスタ及びその製造方法2002
- Inventor(s)
  酒井徹志, 室田淳一, 大見俊一郎, 櫻庭政夫
- Industrial Property Rights Holder
  日本国
- Filing Date
  2002-05-02
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450138
[Presentation] Characterization of Strain in Si1-xGex Films Epitaxially Grown on Si(100) by ECR Ar Plasma CVD without Substrate Heating2014
- Author(s)
  N. Ueno, M. Sakuraba, J. Murota and S. Sato
- Organizer
  7th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Abs.No.P-21.
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Characterization of Strain in Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by ECR Ar Plasma CVD without Substrate Heating2014
- Author(s)
  N.Ueno, M.Sakuraba, J.Murota and S. ato
- Organizer
  7th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.P-21)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Tunneling Characteristics in Si_<1-x>Ge_x/Si Resonant Tunneling Diode2013
- Author(s)
  T.Kawashima, M.Sakuraba and J.Murota
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.P-15)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing2013
- Author(s)
  M.Sakuraba and J.Murota
- Organizer
  Symp. E12: ULSI Process Integration 8
- Place of Presentation
  San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2226)
- Invited
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating2013
- Author(s)
  Y.Abe, M.Sakuraba and J.Murota
- Organizer
  8th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Fukuoka, Japan (Abs.No.P1-4)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Formation and Characterization of Strained Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating2013
- Author(s)
  N.Ueno, M.Sakuraba, J.Murota and S.Sato
- Organizer
  Symp. E12: ULSI Process Integration 8
- Place of Presentation
  San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2228)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing (Invited Paper)2013
- Author(s)
  M. Sakuraba and J. Murota
- Organizer
  Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.195-200, Abs.No.2226.
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_<1-x>Ge_x/Si Resonant Tunneling Diode2013
- Author(s)
  T.Kawashima, M.Sakuraba and J.Murota
- Organizer
  8th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Fukuoka, Japan (Abs.No.P1-27)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of Si1-xGex Alloy on Si(100) by ECR Ar Plasma CVD in a SiH4-GeH4 Gas Mixture without Substrate Heating2013
- Author(s)
  N. Ueno, M. Sakuraba, J. Murota and S. Sato
- Organizer
  Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-8.
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of B-Doped Ge on Si(100) by ECR Ar Plasma CVD from GeH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating2013
- Author(s)
  S.Kubota, M.Sakuraba, J.Murota and S.Sato
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.P-18)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors2013
- Author(s)
  M.Sakuraba and J.Murota
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.D-3)
- Invited
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD from SiH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating2013
- Author(s)
  Y.Abe, M.Sakuraba and J.Murota
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.P-16)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Formation and Characterization of Strained Si1-xGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating2013
- Author(s)
  N. Ueno, M. Sakuraba, J. Murota and S. Sato
- Organizer
  Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.207-211, Abs.No.2228.
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH4-B2H6-H2 Gas Mixture without Substrate Heating2013
- Author(s)
  Y. Abe, M. Sakuraba and J. Murota
- Organizer
  Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-4.
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating2013
- Author(s)
  Y.Abe, S.Kubota, M.Sakuraba, J.Murota and S.Sato
- Organizer
  Symp. E12: ULSI Process Integration 8
- Place of Presentation
  San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2230)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating2013
- Author(s)
  Y. Abe, S. Kubota, M. Sakuraba, J. Murota and S. Sato
- Organizer
  Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.223-228, Abs.No.2230.
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si1-xGex/Si Resonant Tunneling Diode2013
- Author(s)
  T. Kawashima, M. Sakuraba and J. Murota
- Organizer
  Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-27.
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of Si_<1-x>Ge_x Alloy on Si(100) by ECR Ar Plasma CVD in a SiH_4-GeH_4 Gas Mixture without Substrate Heating2013
- Author(s)
  N.Ueno, M.Sakuraba, J.Murota and S.Sato
- Organizer
  8th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Fukuoka, Japan (Abs.No.P1-8)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of Si_<1-x>Ge_x on Si(100) by ECR Ar Plasma CVD from SiH_4-GeH_4 Gas Mixture without Substrate Heating2013
- Author(s)
  N.Ueno, M.Sakuraba, J.Murota and S.Sato
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.P-17)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode2011
- Author(s)
  M.Sakuraba and J.Murota
- Organizer
  Symp. E9: ULSI Process Integration 7
- Place of Presentation
  Boston, USA (Abs. 220th Electrochem. Soc. Meeting, Abs.No.2147)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room-Temperature Resonant Tunneling Diode2011
- Author(s)
  M.Sakuraba, J.Murota
- Organizer
  Symp.E9 : ULSI Process Integration 7 (220th Meeting of the Electrochem.Soc.)
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Fabrication of Room-Temperature Resonant Tunneling Diode with Atomically Controlled Strained Si_<1-x>Ge_x/Si Quantum Heterostructure2011
- Author(s)
  M.Sakuraba, J.Murota
- Organizer
  4th French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (Frontier 2011)
- Place of Presentation
  Sendai, Japan(Invited Paper)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors2011
- Author(s)
  M.Sakuraba, J.Murota
- Organizer
  Symp.E9 : ULSI Process Integration 7 (220th Meeting of the Electrochem.Soc.)
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Fabrication of Room-Temperature Resonant Tunneling Diode with Atomically Controlled Strained Si_<1-x>Ge_x/Si Quantum Heterostructure2011
- Author(s)
  M.Sakuraba and J.Murota
- Organizer
  4th French Research Organizations - Tohoku University Joint Workshop on Frontier Materials (Frontier 2011)
- Place of Presentation
  Sendai, Japan (p.35)
- Invited
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Behavior of N Atoms after Thermal Nitridation of Si_<1-x>Ge_x Surface2011
- Author(s)
  T.Kawashima, M.Sakuraba, B.Tillack and J.Murota
- Organizer
  7th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-7)
- Place of Presentation
  Leuven, Belgium (Abs.No.1171)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors2011
- Author(s)
  M.Sakuraba and J.Murota
- Organizer
  Symp. E9: ULSI Process Integration 7
- Place of Presentation
  Boston, USA (Abs. 220th Electrochem. Soc. Meeting, Abs.No.2152)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Evolution of the Hydrogen Terminated Structure of the Si(100) Surface and Its Interaction with H_2 at 20-800℃2010
- Author(s)
  A.Uto、M.Sakuraba、M.Caymax, J.Murota
- Organizer
  5th Int.SiGe Technology and Device Meeting (ISTDM2010)
- Place of Presentation
  Stockholm、Sweden
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Adsorption and Desorption of Hydrogen on Si(100) in H_2 or Ar Heat Treatment2010
- Author(s)
  A.Uto、M.Sakuraba、M.Caymax, J.Murota
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] In-Situ Heavy B-Doped Si Epitaxial Growth on Tensile-Strained Si(100) by Ultraclean Low-Pressure CVD Using SiH_4 and B_2H_62010
- Author(s)
  M.Nagato、M.Sakuraba、J.Murota、B.Tillack、Y.Inokuchi、Y.Kunii, H.Kurokawa
- Organizer
  5th Int.SiGe Technology and Device Meeting(ISTDM2010)
- Place of Presentation
  Stockholm、Sweden
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Processing in Strained Si-Based CVD Epitaxial Growth2010
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  10th IEEE Int.Conf.on Solid-State and Integrated Circuit Technology (ICSICT-2010)
- Place of Presentation
  Shanghai、China(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically controlled processing in strained Si-based CVD epitaxial growth" (Invited Paper)2010
- Author(s)
  J.Murota
- Organizer
  3rd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2010)
- Place of Presentation
  Albi, France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Effect of Heavy Carbon Atomic-Layer Doping upon Intermixing and Strain at Si_<1-x>Ge_x/Si(100) Heterointerface2010
- Author(s)
  T.Hirano、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Influence of Strain on P Atomic-Layer Doping Characteristics in Strained Si_<0.3>Ge_<0.7>/Si(100) Heterostructures2010
- Author(s)
  Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.SiGe Technology and Device Meeting (ISTDM2010)
- Place of Presentation
  Stockholm、Sweden
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Processing in Strained Si-Based CVD Epitaxial Growth" (Invited Paper)2010
- Author(s)
  J.Murota
- Organizer
  10th IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT-2010)
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Epitaxial Growth of Group IV Semiconductor Nanostructures Using Atomically Controlled Plasma Processing (Invited Paper)2010
- Author(s)
  M. Sakuraba、T. Nosaka、K. Sugawara, J. Murota
- Organizer
  5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Heavy P Atomic-Layer Doping between Si and Si_<0.3>Ge_<0.7>(100) by Ultraclean Low Pressure CVD2010
- Author(s)
  Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] N Atomic-Layer Doping in Si/Si_<1-x>Ge_x/Si(100) Heterostructure Growth by Low-Pressure CVD2010
- Author(s)
  T.Kawashima、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Mobility Enhancement by Highly Strained Si on Relaxed Ge(100) Buffer Grown by Plasma CVD2010
- Author(s)
  K. Sugawara, M. Sakuraba, J. Murota
- Organizer
  5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic-Layer Doping of Strained Si_<1-x>Ge_x2009
- Author(s)
  Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  6th Int.Conf.on Silicon Epitaxy and Heterostructures (ICSI-6)
- Place of Presentation
  Los Angeles、USA
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Processing for Group-IV Semiconductors (Invited Paper)2009
- Author(s)
  J.Murota
- Organizer
  2009 Int.Conf.on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
- Place of Presentation
  Xi'an, China
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si1-xGex Epitaxially Grown on Si(100) (Invited Paper)2009
- Author(s)
  M. Sakuraba, J. Murota
- Organizer
  1st Int. Workshop on Si Based Nano-Electronics and -Photonics (SiNEP-09)
- Place of Presentation
  Vigo、Spain
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Atomically Controlled Processing for Group-IV Semiconductors2009
- Author(s)
  J.Murota, M.Sakuraba
- Organizer
  2009 Int.Conf.on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs.TFT)
- Place of Presentation
  Xi'an、China(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Heavily B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on Si(100) Using Electron-Cyclotron-Resonance Ar Plasma2009
- Author(s)
  T. Nosaka、M. Sakuraba、B. Tillack, J. Murota
- Organizer
  6th Int. Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Los Angeles、USA
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Heavy Carbon Atomic-Layer Doping at Si_<1-x>Ge_x/Si Heterointerface2009
- Author(s)
  T.Hirano、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  6th Int.Conf.on Silicon Epitaxy and Heterostructures (ICSI-6)
- Place of Presentation
  Los Angeles、USA
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100)2009
- Author(s)
  M. Sakuraba, J. Murota
- Organizer
  1st Int. Workshop on Si Based Nano-Electronics and-Photonics (SiNEP-09)
- Place of Presentation
  Vigo, Spain(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Heavy Nitrogen Atomic-Layer Doping of Si_<1-x>Ge_x Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD2009
- Author(s)
  T.Kawashima、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  6th Int.Conf.on Silicon Epitaxy andHeterostructures (ICSI-6)
- Place of Presentation
  Los Angeles、USA
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Electrical Characteristics of B-Doped Highly Strained Si Films Epitaxially Grown on Ge(100) Formed by Plasma CVD2009
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Organizer
  6th Int. Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Los Angeles、USA
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors2009
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  Symp. E10 : ULSI Process Integration 6 (216th Meeting of the Electrochem.Soc.)
- Place of Presentation
  Vienna、Austria(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors (Invited Paper)2009
- Author(s)
  J.Murota
- Organizer
  Symp.E10 : ULSI Process Integration 6(216th Meeting of the Electrochem. Soc.)
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures2009
- Author(s)
  M. Sakuraba, K. Sugawara, J. Murota
- Organizer
  Symp. E10: ULSI Process Integration 6、(216th Meeting of the Electrochem. Soc. )
- Place of Presentation
  Vienna、Austria
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si1-xGex Epitaxially Grown on Si(100)2009
- Author(s)
  M. Sakuraba, J. Murota
- Organizer
  2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100)2009
- Author(s)
  M. Sakuraba, J. Murota
- Organizer
  2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Atomically Controlled Processing for Future Si-Based Devices (Invited Paper)2009
- Author(s)
  J.Murota
- Organizer
  2nd French Research Organizations-Tohoku University Joint Workshon on Frontier Materials
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures2009
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Organizer
  2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008
- Author(s)
  T. Seo, K. Takahashi, M. Sakuraba, J. Murota
- Organizer
  4th Int. SiGe Technology and Device Meeting (ISTDM2008)
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100) Heterostructures with High Ge Fraction2008
- Author(s)
  M. Sakuraba、R. Ito、T. Seo, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Application of Relaxed Ge/Si(100) by ECR Plasma CVD to Highly Strained B Doped Si2008
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Heavily B Atomic-Layer Doping in Si Epitaxial Growth Using Electron-Cyclotron-Resonance Plasma2008
- Author(s)
  T. Nosaka、M. Sakuraba, J. Murota
- Organizer
  Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0.5) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure with Improved Performance at Higher Temperature above 200K2008
- Author(s)
  K. Takahashi, T. Seo, M. Sakuraba, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] "Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs,"2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] SiGeチャネルMOSトランジスタのホットキャリア効果2008
- Author(s)
  森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
- Organizer
  応用物理学会中国四国支部2008年度学術講演会
- Place of Presentation
  松山
- Year and Date
  2008-08-02
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Heavily B Atomic-Layer Doping in Si Epitaxial Growth Using Electron-Cyclotron- Resonance Plasma2008
- Author(s)
  T. Nosaka, M. Sakuraba and J. Murota
- Organizer
  Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya, Japan, No.ZO-5
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
- Place of Presentation
  San Diego (USA)
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] SiGeチャネルpMOSFETにおけるホットキャリアストレス中の基板電流変化2008
- Author(s)
  森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
- Organizer
  第10回IEEE広島支部学生シンポジウム(IEEE HISS)
- Place of Presentation
  広島
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex/Si(100) Heterostructure2008
- Author(s)
  T. Seo、Takahashi, M. Sakuraba, J. Murota
- Organizer
  4th Int. SiGe Technology and Device Meeting (ISTDM2008)
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu (Taiwan)
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100) Heterostructures with High Ge Fraction2008
- Author(s)
  M. Sakuraba, R. Ito, T. Seo, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Atomically Controlled CVD Processing for Future Si-Based Devices (Invited Paper)2008
- Author(s)
  J. Murota
- Organizer
  9th Int. Conf. on Solid-State and Integrated-Circuit Technol. (ICSICT 2008)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Epitaxial Growth of Highly Strained B Doped Si on Relaxed Ge/Si(100)2008
- Author(s)
  K. Sugawara, M. Sakuraba and J. Murota
- Organizer
  Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya, Japan, No. ZP-9.
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] SiGe/SiヘテロチャネルMOSFETにおける過渡チャージポンピング特性2008
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Organizer
  電気学会電子材料研究会
- Place of Presentation
  仙台
- Year and Date
  2008-09-27
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System2008
- Author(s)
  H.Tanno、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  4th Int.SiGe Technology and Device Meeting (ISTDM2008)
- Place of Presentation
  Hsinchu、Taiwan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Nitrogen Atomic-Layer Doping in Nanometer-Order Heterostructure of Si/Si_<1-x>Ge_x/Si(100) by Ultraclean Low-Pressure CVD2008
- Author(s)
  T.Kawashima、M.Sakuraba, J.Murota
- Organizer
  Symp.Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices、Int.Union of Mat.Res.Soc.-Int.Conf.in Asia 2008 (IUMRS-ICA2008)
- Place of Presentation
  Nagoya、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Processing in Si-Based CVD Epitaxial Growth (Invited Paper)2008
- Author(s)
  J. Murota
- Organizer
  Int. Union of Mat. Res. Soc. -Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled CVD Processing for Future Si-Based Devices2008
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  9th Int.Conf.on Solid-State and Integrated-Circuit Technol. (ICSICT 2008)
- Place of Presentation
  Beijing、China(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Processing in Si-Based CVD Epitaxial Growth2008
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices"、Int.Union of Materials Research Society-Int.Conf.in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya、Japan(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0. 5) Si/Strained Si1-xGex/Si(100) Heterostructure with Improved Performance at Higher Temperature above 200 K2008
- Author(s)
  K. Takahashi、T. Seo、M. Sakuraba, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Change of H-Termination on Wet-Cleaned Si(100) and Ge(100) by Heat-Treatment in H_2 or Ar2008
- Author(s)
  A.Uto、M.Sakuraba、M.Caymax, J.Murota
- Organizer
  4th Int.SiGe Technology and Device Meeting (ISTDM2008)
- Place of Presentation
  Hsinchu、Taiwan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Processing for Impurity Doping in Si-Based CVD Epitaxial Growth2008
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  8th Int.Conf.on Atomic Layer Deposition (ALD 2008)
- Place of Presentation
  Bruges、Belgium(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Processing for Impurity Doping in Si-Based CVD Epitaxial Growth (Invited Paper)2008
- Author(s)
  J. Murota
- Organizer
  8th Int. Conf. on Atomic Layer Deposition (ALD 2008)
- Place of Presentation
  Bruges, Belgium
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] "Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs,"2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs,"2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  4th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Epitaxial Growth of B Atomic-Layer Doped Si Film on Si(100) Using Electron-Cyclotron-Resonance Ar Plasma2008
- Author(s)
  T. Nosaka、M. Sakuraba, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Epitaxial Growth of Highly Strained B Doped Si on Relaxed Ge/Si(100)2008
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Organizer
  Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Local Strain in Si/Si_<0.6>Ge_<0.4>/Si(100) Heterostructures by Stripe-Shape Patterning2007
- Author(s)
  J.Uhm、M.Sakuraba, J.Murota
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] "High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth,"2007
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, and J. Murota
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Reliability and Instability of a SiGe/Si-Hetero-Interface In Hetero-Channel MOSFETs2007
- Author(s)
  T.Tsuchiya、M.Sakuraba, J.Murota
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (Invited Paper)2007
- Author(s)
  M. Sakuraba、D. Muto、M. Mori、K. Sugawara、J. Murota
- Organizer
  5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction (x>0. 4) Si/Strained Si1-xGex/Si(100) Heterostructure2007
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Organizer
  3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100) (Invited Paper), Symp. E9 : ULSI2007
- Author(s)
  M. Sakuraba, R. Ito, T. Seo, J. Murota
- Organizer
  Process Integration 5 (212th Meeting of the Electrochem. Soc.)
- Place of Presentation
  Washington, DC, USA(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2007
- Author(s)
  T.Seo、M.Sakuraba, J.Murota
- Organizer
  5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2007
- Author(s)
  T.Seo、M.Sakuraba, J.Murota
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] "Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs,"2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100)2007
- Author(s)
  M. Sakuraba, R. Ito, T. Seo, and J. Murota
- Organizer
  Symp. E9 : ULSI Process Integration 5 (212th Meeting of the Electrochem. Soc.)
- Place of Presentation
  Washington, DC, USA, Abst.No.1283.
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si1-xGex Epitaxially Grown on Si(100) (Invited Paper)2007
- Author(s)
  M. Sakuraba、R. Ito、T. Seo, J. Murota
- Organizer
  Symp. E9: ULSI Process Integration 5 (212th Meeting of the Electrochem. Soc. )
- Place of Presentation
  Washington, DC、USA
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Atomically Controlled Technology for Group IV Semiconductors2007
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  4th Int.Workshop on Nanoscale Semiconductor Devices
- Place of Presentation
  Jeju、Korea(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Structural Change of Atomic-Order Nitride Formed on Si_<1-x>Ge_x(100) and Ge(100) by Heat Treatment2007
- Author(s)
  N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] "Instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs due to Joule heating,"2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  3rd International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  Int'l Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille(France)
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth2007
- Author(s)
  S.Takehiro、M.Sakuraba、T.Tsuchiya, J.Murota
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2007
- Author(s)
  T. Seo, M. Sakuraba, J. Murota
- Organizer
  3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Behavior of N Atoms on Atomic-Order Nitrided Si_<0.5>Ge_<0.5>(100)2007
- Author(s)
  N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low- Pressure CVD System2007
- Author(s)
  T.Yokogawa、K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
- Organizer
  5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Technology for Group IV Semiconductors(Invited Paper)2007
- Author(s)
  J. Murota
- Organizer
  4th Int. Workshop on Nanoscale Semiconductor Devices
- Place of Presentation
  Jeju,Korea
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Heavily Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition2007
- Author(s)
  H.Tanno、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2007
- Author(s)
  T. Seo, M. Sakuraba, J. Murota
- Organizer
  5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2007
- Author(s)
  T. Seo, M. Sakuraba, J. Murota
- Organizer
  5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Strain Control of Si and Si_<1-x>Ge_x Layers in the Si/Si_<1-x>Ge_x/Si Heterostructures by Stripe-Shape Patterning for Future Si-Based Devices(Invited Paper)2007
- Author(s)
  J. Murota
- Organizer
  Symp. E9: ULSI Process Integration5(212th Meeting of the Electrochem. Soc.)
- Place of Presentation
  Washington, DC, USA
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si1-xGex/Si(100) Heterostructure2007
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Organizer
  5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD2007
- Author(s)
  M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota
- Organizer
  5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France, No.S1-I3.
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0. 4) Si/Strained Si1-xGex/Si(100) Heterostructure2007
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Organizer
  5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji, Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Si Epitaxial Growth on Self-Limitedly B Adsorbed Si_<1-x>Ge_x(100) by Ultraclean Low-Pressure CVD System2007
- Author(s)
  K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex Heterostructures on Si(100) Grown by Low-Temperature Ultraclean LPCVD2006
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Organizer
  Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Epitaxial Growth of Group IV Semiconductor in ECR Plasma Enhanced CVD2006
- Author(s)
  M. Sakuraba、D. Muto、M. Mori、K. Sugawara、J. Murota
- Organizer
  Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] "Fabrication of Sub-100-nm Gate-Length SiGe-Heterochannel MOSFETs with In-Situ Doped Selectively Epitaxial SiGe Sourcs/Drain,"2006
- Author(s)
  S. Takehiro, S. Kawada, M. Sakuraba, T. Tsuchiya, and J. Murota
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress,"2006
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Organizer
  37th IEEE Semiconductor Interface Specialist Conference (SISC 2006)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Highly Strained-Si/Relaxed-Ge Epitaxial Growth on Si(100) by ECR Plasma CVD and Evaluation of Thermal Stability2006
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Organizer
  Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] "Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs,"2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices,"2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
- Place of Presentation
  Tohoku Univ., Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174

1. MATSUURA Takashi (60181690)

# of Collaborated Projects: 19 results

# of Collaborated Products: 0 results
2. SAKURABA Masao (30271993)

# of Collaborated Projects: 18 results

# of Collaborated Products: 198 results
3. SAWADA Yasuji (80028133)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
4. ONO Shoichi (00005232)

# of Collaborated Projects: 6 results

# of Collaborated Products: 0 results
5. NAKAJIMA Koji (60125622)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
6. TSUCHIYA Toshiaki (20304248)

# of Collaborated Projects: 4 results

# of Collaborated Products: 29 results
7. NOGUCHI Shoichi (80006220)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
8. MIKOSHIBA Norio (70006279)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
9. TAKEHIRO Shinobu (70344736)

# of Collaborated Projects: 3 results

# of Collaborated Products: 9 results
10. OHMI Tadahiro (20016463)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. MEGURO Toshiyasu (50182150)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
12. SAKAI Tetsushi (60313368)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
13. YOKOO Kuniyoshi (60005428)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. SHIMAWAKI Hidetaka (80241587)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. SATO Nobuyuki (10178759)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. OHMI Shun-ichiro (30282859)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
17. 小林信一 (60277944)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 白木靖寛 (00206286)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 安田幸夫 (60126951)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 荒井英輔 (90283473)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 栗野浩之 (70282093)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 小柳光正 (60205531)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. MISHIMA Seiji

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
24. YOSHIDA Keiichi

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
25. MORI Yuki

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
26. SATO Taketoshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. NAKAMURA Naoto

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. KUROKAWA Harushige

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. MATSUO Seitaro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. 坂本統徳

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
31. 伊澤達夫

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
32. 杉山直治

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
33. 山本裕司

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

MUROTA Junichi 室田 淳一

室田 淳一 ムロタ ジュンイチ

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Creation of High-Carrier-Concentration and High-Mobility Artificial Crystal of Group IV Semiconductors by Atomically Controlled CVD ProcessingPrincipal Investigator

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Creation of Artificial Crystal with Atomically-Controlled Group-IV Semiconductor HeterostructuresPrincipal Investigator

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Formation of Very Low Contact Resistance between Metal and Semiconductor using Semiconductor Structures with Ultra High Carrier ConcentrationPrincipal Investigator

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人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発Principal Investigator

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Si-Ge系エピタキシャル成長による超高濃度不純物半導体の形成とその物性Principal Investigator

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MUROTA Junichi 室田淳一

室田淳一ムロタジュンイチ