PLOTKA Piotr プロトカピョートル

… Alternative Names

ピョートルプォトカピョートルプォトカ

プロトカピヨトルプロトカピヨトル

ピヨトルプロトカピヨトルプロトカ

ピョートルプォトガ

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Researcher Number	70270501
External Links
Affiliation (based on the past Project Information) *help	2006: (財)半導体研究振興会, 半導体研究所, 主任研究員 2006: Semiconductor Research Institute, 半導体研究所, 主任研究員 2002 – 2005: 財団法人半導体研究振興会, 半導体研究所, 主任研究員 2001 – 2005: (財)半導体研究振興会, 主任研究員 2003: Semiconductor Research Foundation Semiconductor Research Institute, Semiconductor Research Institute, Senior Researcher, 主任研究員 2001: (財)半導体研究振興会, 半導体研究所, 主任研究員
Review Section/Research Field	Except Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering
Keywords	Except Principal Investigator intra-band tunneling / 不純物添加 / GaAs / 分子層エピタキシー / inter-band tunneling / static induction transistor / ultra high speed device / tunnel junction / low temperature growth / 変調ドープ … More / 不純物添加技術 / ガリウム砒素薄膜成長 / タンネットダイオード / トンネルトランジスタ / 静電誘導トランジスタ / 超高速トランジスタ / トンネル接合 / 低温成長 / GaAs分子層成長 / Surface Chemical Reaction / Impurity Doping / Self limiting Growth / Atomic Layer Growth / Molecular Layar Growth / 反応機構 / 自己停止機構 / 表面反応機構 / 自己停止成長機構 / 原子層成長 / 分子層成長 / 分光 / 電子デバイス / バリスティック / ラマン / パラメトリック / テラヘルツ / フォノン Less

Development of novel high speed transistor utilizing inter and intra band tunneling of carrier by GaAs molecular layer
- Principal Investigator
  
  KURABAYASHI Toru
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Semiconductor Research Institute
フォノン工学
- Principal Investigator
  
  伊藤弘昌
- Project Period (FY)
  2001 – 2005
- Research Category
  
  Grant-in-Aid for Creative Scientific Research
- Research Institution
  Tohoku University
Development of GaAs Molecular Layar Epitaxy with Doping in Low Temperature Process
- Principal Investigator
  
  KURABAYASHI Toru
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Semiconductor Research Foundation Semiconductor Research Institute

All 2008 2007 2006 2005 Other

All Journal Article Presentation

[Journal Article] GaAs Area-Selective Regrowth with Molecular Layer Epitaxy for Integration ofLow Noise and Power Transistors,and Schottky Diodes2008
- Author(s)
  J. Nishizawa, P. Plotka, T. Kurabayashi
- Journal Title
  
  Physica Status Solidi journal (printing)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16360014
[Journal Article] タンネットダイオードの開発とテラヘルツイメージングへの応用2007
- Author(s)
  倉林徹, ピョートル・プロトカ
- Journal Title
  
  日本金属学会会報まてりあ 46・2
  
  Pages: 63-69
- NAID
  10018508137
- Data Source
  KAKENHI-PROJECT-16360014
[Journal Article] Development of TUNNETT Diode as Terahertz Device and Its Applications2006
- Author(s)
  J. Nishizawa, T. Kurabayashi, P. Plotka, H. Makabe
- Journal Title
  
  IEEE Device Research Conference, extended abstract(Pensilvania)
  
  Pages: 195-196
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360014
[Journal Article] Development of TUNNETT Diode as Terahertz Device and Its Applications2006
- Author(s)
  J.Nishizawa, T.Kurabayashi, P.Plotka, H.Makabe
- Journal Title
  
  IEEE Device Research Conference, extended abstract, June, 2006, Pensilvania
  
  Pages: 195-196
- Data Source
  KAKENHI-PROJECT-16360014
[Journal Article] GaAs TUNNETT Diodes Oscillating at 430-655 GHz in CW Fundamental Mode2005
- Author(s)
  J. Nishizawa, P. Plotka, H. Makabe, T. Kurabayashi
- Journal Title
  
  IEEE Microwave and Wireless Components Letters Vol. 15, No. 9
  
  Pages: 597-599
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360014
[Journal Article] GaAs TUNNETT Diodes Oscillating at 430-655 GHz in CW Fundamental Mode2005
- Author(s)
  J.Nishizawa, P.Plotka, H.Makabe, T.Kurabayashi
- Journal Title
  
  IEEE Microwave and Wireless Components Letters 15・9
  
  Pages: 597-599
- Data Source
  KAKENHI-PROJECT-16360014
[Journal Article] Fundamental mode continuous-wave GaAs TUNNETT oscillators for 100-655 GHz applications2005
- Author(s)
  P.Plotka, J.Nishizawa, T.Kurabayashi, H.Makabe
- Journal Title
  
  Electronics Letters
  
  Pages: 5-12
- Data Source
  KAKENHI-PROJECT-16360014
[Journal Article] GaAs TUNNETT Diodes Oscillating at 430-655 GHz in CW Fundamental Mode2005
- Author(s)
  J. Nishizawa, P. Plotka, H. Makabe, T. Kurabayashi
- Journal Title
  
  IEEE Microwave and Wireless Components Letters 15・9
  
  Pages: 597-599
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16360014
[Journal Article] 290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT dindo2005
- Author(s)
  J.Nishizawa, P.Plotka, H.Makabe, T.Kurabayashi
- Journal Title
  
  1^<st> Tera Medical Forum & 4^<th> Phonon Engineering Forum, Jan.27 (2005) Sendai 41
  
  Pages: 441-442
- Data Source
  KAKENHI-PROJECT-16360014
[Journal Article] 290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode2005
- Author(s)
  J. Nishizawa, P. Plotka, H. Makabe, T. Kurabayashi
- Journal Title
  
  Electronics Letters vol. 41
  
  Pages: 441-442
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360014
[Journal Article] GaAs Area-Selective Regrowth with Molecular Layer Epitaxy for Integration of Low Noise and Power Transistors, and Schottky Diodes
- Author(s)
  J. Nishizawa, P. Plotka, T. Kurabayashi
- Journal Title
  
  Physica Status Solidi jounial (printing)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360014
[Presentation] 706-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy2007
- Author(s)
  P. Plotka
- Organizer
  ISCS-2007
- Place of Presentation
  Kyoto
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360014

1. KURABAYASHI Toru (90195537)

# of Collaborated Projects: 3 results

# of Collaborated Products: 11 results
2. NISHIZAWA Jun-ichi (20006208)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. HAMANO Tomoyuki

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. HENMI Masahiro (30419866)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 伊藤弘昌 (20006274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 須藤建 (60006236)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 四方潤一 (50302237)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 田邉匡生 (10333840)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 佐々木哲朗 (20321630)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. KIKUCHI Hideyuki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 西沢潤一

# of Collaborated Projects: 0 results

# of Collaborated Products: 10 results

PLOTKA Piotr プロトカ ピョートル

ピョートル プォトカ ピョートル プォトカ

プロトカ ピヨトル プロトカ ピヨトル

ピヨトル プロトカ ピヨトル プロトカ

ピョートル プォトガ

Research Projects

Research Products

Co-Researchers

Development of novel high speed transistor utilizing inter and intra band tunneling of carrier by GaAs molecular layer

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

フォノン工学

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Development of GaAs Molecular Layar Epitaxy with Doping in Low Temperature Process

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] GaAs Area-Selective Regrowth with Molecular Layer Epitaxy for Integration ofLow Noise and Power Transistors,and Schottky Diodes2008

Author(s)

Journal Title

Description

Data Source

[Journal Article] タンネットダイオードの開発とテラヘルツイメージングへの応用2007

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Development of TUNNETT Diode as Terahertz Device and Its Applications2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Development of TUNNETT Diode as Terahertz Device and Its Applications2006

Author(s)

Journal Title

Data Source

[Journal Article] GaAs TUNNETT Diodes Oscillating at 430-655 GHz in CW Fundamental Mode2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] GaAs TUNNETT Diodes Oscillating at 430-655 GHz in CW Fundamental Mode2005

Author(s)

Journal Title

Data Source

[Journal Article] Fundamental mode continuous-wave GaAs TUNNETT oscillators for 100-655 GHz applications2005

Author(s)

Journal Title

Data Source

[Journal Article] GaAs TUNNETT Diodes Oscillating at 430-655 GHz in CW Fundamental Mode2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] 290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT dindo2005

Author(s)

Journal Title

Data Source

[Journal Article] 290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] GaAs Area-Selective Regrowth with Molecular Layer Epitaxy for Integration of Low Noise and Power Transistors, and Schottky Diodes

Author(s)

Journal Title

Description

Data Source

[Presentation] 706-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy2007

Author(s)

Organizer

Place of Presentation

PLOTKA Piotr プロトカピョートル

ピョートルプォトカピョートルプォトカ

プロトカピヨトルプロトカピヨトル

ピヨトルプロトカピヨトルプロトカ

ピョートルプォトガ