Nakajima Anri 中島安理

… Alternative Names

NAKAJIMA ANRI 中島安理

NAKAJIMA Anri 中島安理

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Researcher Number	70304459
Other IDs
External Links
Affiliation (Current)	2025: 広島大学, 半導体産業技術研究所, 准教授
Affiliation (based on the past Project Information) *help	2024: 広島大学, 半導体産業技術研究所, 准教授 2017 – 2019: 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 2013 – 2015: 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 2010 – 2011: 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 2010: Hiroshima University, 准教授 … More 2009: 広島大, 准教授 2008: Hiroshima University, ナノデバイス・バイオ融合科学研究所, 准教授 2007: 広島大, 助教授 2007: Hiroshima University, ナノデバイス・システム研究センター, 准教授 1999 – 2006: 広島大学, ナノデバイス・システム研究センター, 助教授 Less
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials / Electron device/Electronic equipment
Keywords	Principal Investigator 原子層成長 / フラッシュメモリ / Si / バイオセンサー / ゲート絶縁膜 / シリコン / 単一電子効果 / 有機量子ドット / 単一分子計測 / ナノ構造 … More / Few number of dot / Single electron effect / Soliton / Free energy / Flash memory / Nano dot / Floating gate / トンネルゲート絶縁膜 / 少数ドット / ソリトン / 自由エネルギー / ナノドット / フローティングゲート / hafnia / zirconia / continuous deposition / atomic-layer deposition / stack structure / gate dielectrics / high-k metal oxide / metal gate / 原始層成長 / ハフニア / ジルコニア / 真空一貫 / スタック構造 / 高誘電率金属酸化物 / メタルゲート / 前立腺特異抗原 / ＤＮＡ / 単一電子トランジスタ / バイオデバイス / フラーレン / 有機分子 / 分子エレクトロニクス / 有機 / 信頼性 / MOSトランジスタ / Ge基板 / 交換相互作用 / 遍歴電子 / 局在電子 / RKKY交換相互作用 / ファノ近藤効果 / 量子ドット / スピン / 少数電子系 / 電子相関 / 電子波干渉 / トランジスタ / フローティングドット / ナノスケール … More Except Principal Investigator 多結晶シリコン / Coulomb blockade / Transistor / Silicon narrow wire / Intermittent exposure method / Dislane / Self-limiting mechanism / Atomic-layer deposition / Selective deposition of silicon / 活性化エネルギー / シリコン酸化膜 / シリコン窒化膜 / ジシラン熱分解 / 低抵抗 / シリコンドット / 非線形電気伝導 / クーロン振動 / 低温電気伝導 / 微細トランジスタ / 光・熱触媒反応 / 金属触媒 / ガスフローパターン / 2インチSiウェハ / 塩化水素脱離反応 / クーロンブロッケイド / トランジスタ / シリコン細線 / 間欠照射 / ジシラン / 自己停止機構 / 原子層成長 / シリコン選択成長 / TFT / チャネリング注入 / 結晶配向 / ナノワイヤー / チャネリング / イオン注入 / 結晶配向制御 / Siナノワイヤー Less

伝導性有機量子ドットの位置制御のための有機分子混合電子線レジストの研究Principal Investigator
- Principal Investigator
  
  中島安理
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hiroshima University
Measurements of a single molecule based on a Si fine structure transistorPrincipal Investigator
- Principal Investigator
  
  NAKAJIMA ANRI
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
Biosensors based on a Si single-electron transistor for practical usePrincipal Investigator
- Principal Investigator
  
  NAKAJIMA ANRI
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
Study of flashmemory using organic and molecular materialsPrincipal Investigator
- Principal Investigator
  
  NAKAJIMA Anri
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hiroshima University
Orientation-Aligned Si Nano-wires Formed by Multiple-Channeling Ion-Implantation
- Principal Investigator
  
  ITO Takashi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Research of reliable Ge transistor having atomic layer deposited gate dielectricsPrincipal Investigator
- Principal Investigator
  
  NAKAJIMA Anri
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
シリコンスピンデバイスの研究Principal Investigator
- Principal Investigator
  
  中島安理
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
Flash memory having a few numbers of floating nanometer-scale dot and atomic-layer-deposited tunnel gate dielectricsPrincipal Investigator
- Principal Investigator
  
  NAKAJIMA Anri
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
Continuous Atomic-Layer Deposition of Metal Gate/High-k Metal Oxide Gate Dielectric Stack StructurePrincipal Investigator
- Principal Investigator
  
  NAKAJIMA Anri
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
微細フラッシュメモリ型トランジスタにおける電子波干渉と電子相関Principal Investigator
- Principal Investigator
  
  中島安理
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
Study on fabrication method for ultra-small transistors by means of selective atomic-layer deposition
- Principal Investigator
  
  YOKOYAMA Shin
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY

All 2019 2016 2015 2014 2013 2012 2011 2004 2003 2002 2001 Other

All Journal Article Presentation Patent

[Journal Article] Application of Single-Electron Transistor to Biomolecule and Ion Sensors2016
- Author(s)
  Anri Nakajima
- Journal Title
  
  Applied Sciences
  
  Volume: 6 Issue: 4 Pages: 94-94
- DOI
  10.3390/app6040094
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289103
[Journal Article] Biomolecule detection based on Si single-electron transistors for practical use2013
- Author(s)
  Anri Nakajima, Takashi Kudo, and Sadaharu Furuse
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Issue: 4 Pages: 43702-43702
- DOI
  10.1063/1.4816267
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289103
[Journal Article] Charge redistribution in a charge storage layer containing C60 molecules and organic polymers for long electron retention2012
- Author(s)
  Anri Nakajima
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101 Issue: 21 Pages: 213301-213301
- DOI
  10.1063/1.4767132
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360012
[Journal Article] In-Plane Grain Orientation Alignment of Polycrystalline Si Films by Normal and Oblique-Angle Ion-Implantations2012
- Author(s)
  Anri Nakajima, Shin-Ichiro Kuroki, Shuntaro Fujii, and Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Carrier transport and its variation of laser-lateral-crystallized poly-Si TFTs2011
- Author(s)
  S.Kuroki
- Journal Title
  
  Electronics Letters
  
  Volume: 47 Issue: 24 Pages: 1336-1338
- DOI
  10.1049/el.2011.2854
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360157, KAKENHI-PROJECT-23360144
[Journal Article] Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultra low power operation2011
- Author(s)
  A.Nakajima
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 98 Issue: 5
- DOI
  10.1063/1.3549178
- NAID
  120006582092
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Functional gate metal-oxide semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation2011
- Author(s)
  Anri Nakajima, Takashi Kudo, TakashiIto
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: Vol.98
- NAID
  120006582092
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Atomic-layer-deposition of ultrathin silicon nitride for sub-tunneling gate dielectrics2004
- Author(s)
  Anri Nakajima
- Journal Title
  
  ECS Symposium I1 : Proceedings of the First International Symposium on Dielectrics for Nanosystems(Honolulu, Hawaii, October 3-8,2004) 2004-04
  
  Pages: 418-424
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Atomic-layer-deposition of ultrathin silicon nitride for sub-tunneling gate dielectrics2004
- Author(s)
  Anri Nakajima
- Journal Title
  
  ECS Symposium I1 : Proceedings of the First International Symposium on Dielectrics for Nanosystems (Honolulu, Hawaii, October 3-8) Vol.2004-04
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Atomic-Layer-Deposited Ultrathin Si-Nitride Gate Dielectrics …A Better Choice for Sub-tunneling Gate Dielectrics2003
- Author(s)
  Anri Nakajima
- Journal Title
  
  Technical Digest of the 2003 IEEE International Electron Devices Meeting(Washington, D.C., Dec.8-10,2003)
  
  Pages: 657-660
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Atomic-Layer-Deposited Ultrathin Si-Nitride Gate Dielectrics -A Better Choice for Sub-tunneling Gate Dielectrics-2003
- Author(s)
  Anri Nakajima
- Journal Title
  
  Technical Digest of the 2003 IEEE International Electron Devices Meeting (Washington, D.C., Dec.8-10)
  
  Pages: 657-660
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Carrier Mobility in p-MOSFET with Atomic-Layer-Deposited Si-Nitride/SiO_2 Stack Gate Dielectrics2003
- Author(s)
  Anri Nakajima
- Journal Title
  
  IEEE Electron Device Lett. 24
  
  Pages: 472-474
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] High Quality Atomic-Layer-Deposited Ultrathin Silicon-Nitride Gate Dielectrics with Low Density of Interface and Bulk Traps2003
- Author(s)
  Anri Nakajima
- Journal Title
  
  Appl.Phys.Lett. 83
  
  Pages: 335-337
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] High Quality Atamic-Layer-Deposited Ultrathin Silicon-Nitride Gate Dielectrics with Low Density of Interface and Bulk Traps2003
- Author(s)
  Anri Nakajima
- Journal Title
  
  Appl.Phys.Lett. 83
  
  Pages: 335-337
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Atomic-layer-deposition of Si nitride and ZrO_2 for gate dielectrics2002
- Author(s)
  Anri Nakajima
- Journal Title
  
  Abst.AVS Topical Conference on Atomic Layer Deposition (ALD 2002)(Seoul, August 19-21)(Invited)
  
  Pages: 6-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Low-temperature formation of highly-reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology2002
- Author(s)
  Anri Nakajima
- Journal Title
  
  J.Vac.Sci, Technol.B 20
  
  Pages: 1406-1409
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Atomic-layer deposition of ZrO_2 with a Si nitiride barrier layer2002
- Author(s)
  Anri Nakajima
- Journal Title
  
  Appl.Phys Lett. 81
  
  Pages: 2824-2826
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Atomic-layer-deposited silicon-nitride/SiO_2 stack - a highly potential gate dielectrics for advanced CMOS technology (Introductory Invited)2002
- Author(s)
  Anri Nakajima
- Journal Title
  
  Microelectronics Reliability 42
  
  Pages: 1823-1835
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Low-temperature formation of highly-reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal- oxide-semiconductor technology2002
- Author(s)
  Anri Nakajima
- Journal Title
  
  J.Vac.Sci.& Technol B 20
  
  Pages: 1406-1409
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Atomic-layer-deposition of Si nitride and ZrO_2 for gate dielectrics2002
- Author(s)
  Anri Nakajima
- Journal Title
  
  Abst.AVS Topical Conference on Atomic Layer Deposition (ALD 2002)(Seoul, August 19-21,2002)
  
  Pages: 6-6
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] NH_3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability2002
- Author(s)
  Anri Nakajima
- Journal Title
  
  Appl.Phys.Lett. 80
  
  Pages: 1252-1254
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] NH_3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability2002
- Author(s)
  Anri Nakajima
- Journal Title
  
  Appl.Phys Lett. 80
  
  Pages: 1252-1254
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Atomic-layer-deposited silicon-nitride/SiO_2 stack…a highly potential gate dielectrics for advanced CMOS technology2002
- Author(s)
  Anri Nakajima
- Journal Title
  
  Microelectronics Reliability 42
  
  Pages: 1823-1835
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Atomic-layer deposition of ZrO_2 with a Si nitiride barrier layer2002
- Author(s)
  Anri Nakajima
- Journal Title
  
  Appl.Phys.Lett. 81
  
  Pages: 2824-2826
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Soft Breakdown Free Atomic-Layer-Deposited Silicon- Nitride/SiO_2 Stack Gate Dielectrics2001
- Author(s)
  Anri Nakajima
- Journal Title
  
  Technical Digest of the 2001 IEEE International Electron Devices Meeting (Washington, D.C., Dec.2-5)
  
  Pages: 133-136
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Soft Breakdown Free Atomic-Layer-Deposited Silicon-Nitride/SiO_2 Stack Gate Dielectrics2001
- Author(s)
  Anri Nakajima
- Journal Title
  
  I Technical Digest of the 2001 IEEE International Electron Devices Meeting(Washington, D.C., Dec.2-5,2001)
  
  Pages: 133-136
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Journal Article] Charge redistribution in a charge storage layer containing C_60 molecules and organic polymers for long electron retention
- Author(s)
  Anri Nakajima and Masatochi Uchino
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: Vol. 101, No. 21 Pages: 213301-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360012
[Patent] Semiconductor device and method for manufacturing same2003
- Inventor(s)
  中島安理
- Industrial Property Rights Holder
  株式会社半導体理工学研究センター
- Filing Date
  2003-05-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450129
[Presentation] Fullerene-Containing Electrically Conductive Electron Beam Resist for Nanometer Lateral-Scale Organic Electron devices2019
- Author(s)
  Anri Nakajima
- Organizer
  The 26th Assembly of Advanced Materials Congress (Stockholm, Sweden)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03254
[Presentation] Applications of Si nanoscale dot to memory and sensor devices2015
- Author(s)
  Anri Nakajima
- Organizer
  EMN Meeting on Vacuum Electronics
- Place of Presentation
  Las Vegas, NV, USA
- Year and Date
  2015-11-21
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289103
[Presentation] Biomolecule Sensing Based on a Single-electron Transistor2015
- Author(s)
  Anri Nakajima
- Organizer
  EMN Phuket Meeting 2015 Energy Materials Nanotechnology
- Place of Presentation
  Phuket, Thailand
- Year and Date
  2015-05-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289103
[Presentation] Si単電子トランジスタを用いた高感度バイオセンサー2014
- Author(s)
  中島　安理, 工藤　貴史，古瀬　貞治
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学　相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25289103
[Presentation] Si単電子トランジスタを用いた前立腺特異抗原(PSA)の検出2014
- Author(s)
  中島　安理, 工藤　貴史，古瀬　貞治
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学　相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25289103
[Presentation] Si Single-Electron Transistor based on Multiple Island and Its Applications2013
- Author(s)
  Anri Nakajima
- Organizer
  2013 Energy Materials Nanotechnology Fall Meeting
- Place of Presentation
  Orlando USA
- Invited
- Data Source
  KAKENHI-PROJECT-25289103
[Presentation] Alignment of In-Plane Crystallographic Grain Orientations in Polycryst alline Si Films by Normal and Oblique-Angle Ion Implantations2011
- Author(s)
  A.Nakajima
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  愛知県産業労働センター
- Year and Date
  2011-09-29
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] Alignment of In-plane Crystallographic Grain Orientations in Polycrystalline Si Films by Normal and Oblique-Angle Ion-Implantations2011
- Author(s)
  Anri Nakajima, Shin-Ichiro Kuroki, Shuntaro Fujii, and Takashi Ito
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  名古屋
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-21360157

1. YOKOYAMA Shin (80144880)

# of Collaborated Projects: 6 results

# of Collaborated Products: 0 results
2. ITO Takashi (20374952)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
3. KUROKI Shin-ichiro (70400281)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
4. SHIBAHARA Kentaro (50274139)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. KIKKAWA Takamaro (60304458)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 鈴木孝至 (00192617)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Nakajima Anri 中島 安理

NAKAJIMA ANRI 中島 安理

NAKAJIMA Anri 中島 安理

Research Projects

Research Products

Co-Researchers

伝導性有機量子ドットの位置制御のための有機分子混合電子線レジストの研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Measurements of a single molecule based on a Si fine structure transistorPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Biosensors based on a Si single-electron transistor for practical usePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study of flashmemory using organic and molecular materialsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Orientation-Aligned Si Nano-wires Formed by Multiple-Channeling Ion-Implantation

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research of reliable Ge transistor having atomic layer deposited gate dielectricsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

シリコンスピンデバイスの研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Flash memory having a few numbers of floating nanometer-scale dot and atomic-layer-deposited tunnel gate dielectricsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Continuous Atomic-Layer Deposition of Metal Gate/High-k Metal Oxide Gate Dielectric Stack StructurePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

微細フラッシュメモリ型トランジスタにおける電子波干渉と電子相関Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on fabrication method for ultra-small transistors by means of selective atomic-layer deposition

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Application of Single-Electron Transistor to Biomolecule and Ion Sensors2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Biomolecule detection based on Si single-electron transistors for practical use2013

Author(s)

Journal Title

Nakajima Anri 中島安理

NAKAJIMA ANRI 中島安理

NAKAJIMA Anri 中島安理