Murakami Hideki 村上秀樹

… Alternative Names

MURAKAMI Hideki 村上秀樹

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Researcher Number	70314739
Other IDs
External Links
Affiliation (Current)	2025: 久留米工業高等専門学校, 電気電子工学科, 教授
Affiliation (based on the past Project Information) *help	2014: 広島大学, 大学院先端物質科学研究科, 助教 2010 – 2014: 広島大学, 先端物質科学研究科, 助教 2007 – 2009: Hiroshima University, 大学院・先端物質科学研究科, 助教 2006: 広島大学, 大学院先端物質科学研究科, 助手 2003 – 2006: 広島大学, 大学院・先端物質科学研究科, 助手 1999 – 2000: 広島大学, 工学部, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering
Keywords	Principal Investigator MOCVD / 高誘電率ゲート絶縁膜 / ALCVD / 高誘電率絶縁膜 / ゲート絶縁膜 / 有機金属錯体 Except Principal Investigator 量子ドット / Si量子ドット / スーパーアトム / フローティングゲート … More / エレクトロルミネッセンス / Quantum dots / 自己組織化 / Tunnel Current / Scanning Probe Microscope / Location Control / Low Pressure CVD / Quantum Dots / Quantum Effect / Silicon / 表面化学結合 / 選択成長 / 原子間力顕微鏡 / 自己組織化形成 / 量子構造 / トンネル電流 / 走査プローブ顕微鏡 / 位置制御 / 減圧CVD / 量子効果 / シリコン / 配列制御 / 発光ダイオード / Si系量子ドット / Ge量子ドット / 縦積み連結 / LPCVD / 一次元連結 / 不揮発性メモリ / 量子サイズ効果 / 不揮発メモリ / メモリデバイス / ハイブリッド構造 / シリサイドナノドット / シリコン量子ドット / 光レスポンス / ハイブリッドドット / 金属ナノドット / フローティングゲートメモリ / ハイブリッドナノドット / ナノ結晶 / 発光デバイス Less

Alignment Control and Electrical Coupling of High-density Si-based Quantum Dots
- Principal Investigator
  
  SEIICHI Miyazaki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its Electroluminescence
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
  Hiroshima University
Formation and characterization of La2O3 gate dielectrics formed using by metalorganic CVDPrincipal Investigator
- Principal Investigator
  
  MURAKAMI Hideki
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
Integration of silicon-based nano-scalestructure and its functional memory device application
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hiroshima University
シリコン系スーパーアトム構造の高密度集積と新機能材料創成
- Principal Investigator
  
  宮崎誠一
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
PN制御シリコン系ナノ結晶集積構造におけるキャリア輸送とエレクトロルミネッセンス
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state control
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY
Control of Silicon quantum structures and its application to room-temperature device operation
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (A).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY

All 2014 2010 2009 2008 2007 2005 2004 2003 Other

All Journal Article Presentation Patent

[Journal Article] Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack2014
- Author(s)
  3.A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki
- Journal Title
  
  ECS Trans.
  
  Volume: 64 Pages: 241-248
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] Characterization of Interfaces between Chemically-Cleaned or Thermally-Oxidized Germanium and Metals2010
- Author(s)
  H.Murakami
- Journal Title
  
  ECS Trans.
  
  Volume: 33 Pages: 253-262
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quaatum Dots2007
- Author(s)
  J. Xu, K. Makihara, H Deki, Y. Kawaguchi. H. Murakami, S. Higashi, S. Miyazaki
- Journal Title
  
  Solid State Phenomena 121-123
  
  Pages: 557-560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Characterization of Electronic Chareed States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique2007
- Author(s)
  R. Nishihara, K. Makihara, Y. Kawaguchi, M. Bceda, H. Murakami, S. Higashi, S. Miyazaki
- Journal Title
  
  Materials Science Forum 561-565
  
  Pages: 1213-1216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots2007
- Author(s)
  J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki
- Journal Title
  
  Solid State Phenomena 121-123
  
  Pages: 557-560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique2007
- Author(s)
  R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
- Journal Title
  
  Materials Science Forum 561-565
  
  Pages: 1213-1216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique2005
- Author(s)
  J.Nishitani, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]
  
  Pages: 294-295
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique2005
- Author(s)
  J.Nishitani, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-40]
  
  Pages: 112-113
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Experimental Evidence of Coulombic Interaction among Stored Charges in Single Si Dot as Detected by AFM/Kelvin Probe Technique2005
- Author(s)
  J.Nishitani, K.Makihara, Y.Darma, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]
  
  Pages: 177-180
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots2005
- Author(s)
  T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  IEICE Trans.on Electronics E88-C/4(In press)
- NAID
  110003175632
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of the nucleation density of si quantum dots by remote hydrogen plasma treatment2005
- Author(s)
  K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Applied Surface Science 244/1-4
  
  Pages: 75-78
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe2005
- Author(s)
  K.Makihara, J.Xu, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]
  
  Pages: 32-33
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe2005
- Author(s)
  K.Makihara, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-34]
  
  Pages: 100-101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots2004
- Author(s)
  T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices [H-2-4]
  
  Pages: 126-127
- NAID
  110003175632
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories2004
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials [H-2-4]
  
  Pages: 126-127
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Influence of Thermal Annealing on Compositional Mixing and Crystallinity of Highly Selective Grown Si Dots with Ge Core2004
- Author(s)
  Y.Darma, Hideki Murakami, S.Miyazaki
- Journal Title
  
  Applied Surface Science 244/1-4
  
  Pages: 156-159
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment2004
- Author(s)
  K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of 12th Int. conf. on Solid Films and Surfaces(Hamamatsu, June 21-25, 2004) [A5-2]
  
  Pages: 137-137
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probr2004
- Author(s)
  K.Makihara, Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-19]
  
  Pages: 54-55
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories2004
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-40]
  
  Pages: 100-101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Charging and Discharging Characterization of Stacked Floating Gates of Silicon Quantum Dots2004
- Author(s)
  T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-39]
  
  Pages: 98-99
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs2004
- Author(s)
  M.Ikeda, Y.Shimizu, T.Shibaguchi, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-17]
  
  Pages: 50-51
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO_2 by Combination of Low-Pressure CVD with Remote Plasma Treatments2004
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-35]
  
  Pages: 90-91
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique2004
- Author(s)
  K.Makihara, Y.Okamoto, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004)
- NAID
  110003175633
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Infuence of Thermal Annealing on Compotional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core2003
- Author(s)
  Y.Darma, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17, 2003)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum Dots Floating Gate MOS Memories2003
- Author(s)
  M.Ikeda, Y.Shimizu, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Analysis of Charging Characteristics in MOSFETs with a Si-Quantum-Dots floating Gate2003
- Author(s)
  T.Shibaguchi, Y.Shimizu, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)
- NAID
  110003175365
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Electronic Charged State of Single Si Quantum Dots with and without Ge core as Detected by AFM/Kelvin Probe Technique2003
- Author(s)
  Y.Darma, K.Takeuchi, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probe2003
- Author(s)
  K.Makihara, Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)
- NAID
  110003175342
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs2003
- Author(s)
  M.Ikeda, Y.Shimizu, T.Shibaguchi, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO_2 by Combination of Low-Pressure CVD and Remote Plasma Treatments2003
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29,2004)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment
- Author(s)
  K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of 12th Int. conf. on Solid Films and Surfaces (Hamamatsu, June 21-25, 2004 ) [A5-2]
  
  Pages: 137-137
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Charging and Discharging Characterization of Stacked Floating Gates of Silicon Quantum Dots
- Author(s)
  T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-39]
  
  Pages: 98-99
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique
- Author(s)
  J.Nishitani, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyzaki
- Journal Title
  
  Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]
  
  Pages: 294-295
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs
- Author(s)
  M.Ikeda, Y.Shimizu, T.Shibaguchi, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-17]
  
  Pages: 50-51
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Electronic Charged State of Single Si Quantum Dots with and without Ge core as Detected by AFM/Kelvin Probe Technique
- Author(s)
  Y.Darma, K.Takeuchi, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-18]
  
  Pages: 44-45
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum Dots Floating Gate MOS Memories
- Author(s)
  M.Ikeda, Y.Shimizu, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-17]
  
  Pages: 42-43
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Analysis of Charging Characteristics in MOSFETs with a Si-Quantum-Dots Floating Gate
- Author(s)
  T.Shibaguchi, Y.Shimizu, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.4]
  
  Pages: 151-154
- NAID
  110003175365
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probe
- Author(s)
  K.Makihara, Y.Okamoto, H.Nakagawa, M.Ikeda, H..Murakami, S.Miyazaki
- Journal Title
  
  Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [2.4]
  
  Pages: 37-40
- NAID
  110003175342
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Infuence of Thermal Annealing on Compotional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core
- Author(s)
  Y.Darma, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17,2003) [P2-45]
  
  Pages: 209-210
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in Si02 by Combination of Low-Pressure CVD with Remote Plasma Treatments
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-35]
  
  Pages: 90-91
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots
- Author(s)
  T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.4]
  
  Pages: 273-276
- NAID
  110003175632
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique
- Author(s)
  K.Makihara, Y.Okamoto, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.5]
  
  Pages: 277-280
- NAID
  110003175633
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probr
- Author(s)
  K.Makihara.Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-19]
  
  Pages: 54-55
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in Si0_2 by Combination of Low-Pressure CVD and Remote Plasma Treatments
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S., Higashi, S.Miyazaki
- Journal Title
  
  Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29, 2004) [28P-6-68L]
  
  Pages: 216-217
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs
- Author(s)
  M.Ikeda, Y.Shimizu, T.Shibaguchi H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-9-1]
  
  Pages: 846-847
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Experimental Evidence of Coulombic Interaction among Stored Charges in Single Si Dot as Detected by AFM/Kelvin Probe Technique
- Author(s)
  J.Nishitani, K.Makihara, Y.Darma, H.Murakami, S.Higashi, S.Miyzaki
- Journal Title
  
  2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]
  
  Pages: 177-180
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe
- Author(s)
  K.Makihara, J.Xu, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]
  
  Pages: 32-33
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-40]
  
  Pages: 100-101
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot. Floating Gate in Metal-Oxide-Semiconductor Memories
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials (Tokyo, September 15-17, 2004) [H-2-4]
  
  Pages: 126-127
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Patent] 半導体素子2008
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎, 村上秀樹
- Patent Publication Number
  2008-288346
- Filing Date
  2008-11-27
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Ge 基板中のAs高効率活性化と低抵抗浅接合形成2014
- Author(s)
  浜田慎也、村上秀樹、小野貴寛、橋本邦明、大田晃生、花房宏明、東清一郎、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス]
- Place of Presentation
  名古屋大学
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Interfaces between Chemically-Cleaned or Thermally-Oxidized Germanium and Metals2010
- Author(s)
  H.Murakami
- Organizer
  218th Electrochemical Society (ECS) Meeting : Si Ge & Ge Materials, Processing and Device Symposium
- Place of Presentation
  Las Vegas, Nevada
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] La(TMOD)3を用いたMOCVDによるLa酸化薄膜の形成2009
- Author(s)
  要垣内亮,大田晃生,村上秀樹,東清一郎,宮崎誠一
- Organizer
  第14回ゲートスタック研究会
- Place of Presentation
  東レ総合研修センター
- Data Source
  KAKENHI-PROJECT-19760219
[Presentation] La(TMOD)_3を用いたMOCVDによるLa酸化薄膜の形成2009
- Author(s)
  要垣内亮, 大田晃生, 村上秀樹, 東清一郎, 宮崎誠一
- Organizer
  第14回ゲートスタック研究会
- Place of Presentation
  東レ総合研修センター
- Data Source
  KAKENHI-PROJECT-19760219
[Presentation] La-Oxide Thin Films Formed by MOCVD Using La(TMOD)_32008
- Author(s)
  R. Yougauchi, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki
- Organizer
  The IUMRS International Conference in Asia 2008
- Place of Presentation
  Nagoya Congress Center
- Data Source
  KAKENHI-PROJECT-19760219
[Presentation] La(TMOD)3を用いたMOCVDによるLa酸化薄膜の形成2008
- Author(s)
  要垣内亮,大田晃生,村上秀樹,東清一郎,宮崎誠一
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-19760219
[Presentation] La(TMOD)_3を用いたMOCVDによるLa酸化薄膜の形成2008
- Author(s)
  要垣内亮, 大田晃生, 村上秀樹, 東清一郎, 宮崎誠一
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-19760219
[Presentation] La-Oxide Thin Films Formed by MOCVD Using La(TMOD)32008
- Author(s)
  R. Yougauchi, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki
- Organizer
  The IUMRS International Conference in Asia 2008
- Place of Presentation
  Nagoya Congress Center
- Data Source
  KAKENHI-PROJECT-19760219
[Presentation] Characterization of Electronic Charged States of Nickel Sikicide Nanodots Using AFM/Kelvin Probe Technique2007
- Author(s)
  R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
- Organizer
  The Sixth Pacific Rim International Conference on Advanced Materials and Processing
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Characterization of Electronic Charged States of Nickel Sikicide Nanodots Using AFM/Kelvm Probe Technique2007
- Author(s)
  R. Nishihara, K. Maldhara, Y. Kawaguchi. M. Dceda, H, Murakami, S. Higashi, S. Miyaziki
- Organizer
  The Sixth Pacific Rim International Conference on Advaneed Materials and Processing
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Impact ofBoron Doping to Si Quaatum Dots on Light Emission Properties2007
- Author(s)
  K. Okuyama, K・ Makihara, A.Ohta, H. Murakami, M. Ikeda, S. Higashi, S. Miyazaki
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Phosphorus Doping to Si Quantum Dots for Floating Gate Application2007
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, H. Murakami, R. Matsumoto, E. Ikenaga, M. Kobata, J. Kim, S. Higashi and S. Miyazaki
- Organizer
  2007 Silicon Nanoelectronics Workshop
- Place of Presentation
  Kyoto
- Year and Date
  2007-06-11
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] La-DPM錯体を用いたMOCVDによるLa系酸化薄膜形成とNH3熱処理効果2007
- Author(s)
  要垣内亮,大田晃生,宗高勇気,村上秀樹,東清一郎,宮崎誠一
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-19760219
[Presentation] The Impact of Post Deposition NH3-Anneal on La Oxide Films Formed by MOCVD Using La(DPM)32007
- Author(s)
  R. Yougauchi, A. Ohta, Y. Munetaka, H. Murakami, S. Higashi, S. Miyazaki
- Organizer
  Fifth International Symposiumon Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo Metropolitan University Minami-Osawa Campus
- Data Source
  KAKENHI-PROJECT-19760219
[Presentation] Impact of Boron Doping to Si Quantum Dots on Light Emission Properties2007
- Author(s)
  K. Okuyama, K. Makihara, A. Ohta, H. Murakami, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Phosphoras Doping to Si Quantum Dots for Floating Gate Application2007
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, H. Murakami. R, Matsumoto, E. Ikenaga, M. Kobata, J. Kim S. Higashi, S. Miyazaki
- Organizer
  2007 Silicon Nanoelectronics Workshop
- Place of Presentation
  Kyoto
- Year and Date
  2007-06-11
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Impact of Remote H2 Plasma on Surface Roughness of 4H-SiC(0001)
- Author(s)
  T. Nguyen, H. Zhang, D. Takeuchi, A. Ohta, K. Makihara, H. Murakami, and S. Miyazaki
- Organizer
  International Union Material Research Society - International Conference in Asia 2014
- Place of Presentation
  福岡
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)
- Author(s)
  H. Murakami, S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi and S. Miyazaki
- Organizer
  226th Meeting of The Electrochemical Society
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-06 – 2014-10-09
- Data Source
  KAKENHI-PROJECT-24246054

1. MIYAZAKI Seiichi (70190759)

# of Collaborated Projects: 7 results

# of Collaborated Products: 54 results
2. HIGASHI Seiichiro (30363047)

# of Collaborated Projects: 5 results

# of Collaborated Products: 33 results
3. KOHNO Atsushi (30284160)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. MAKIHARA Katsunori (90553561)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

Murakami Hideki 村上 秀樹

MURAKAMI Hideki 村上 秀樹

Research Projects

Research Products

Co-Researchers

Alignment Control and Electrical Coupling of High-density Si-based Quantum Dots

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Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its Electroluminescence

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Formation and characterization of La2O3 gate dielectrics formed using by metalorganic CVDPrincipal Investigator

Principal Investigator

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Integration of silicon-based nano-scalestructure and its functional memory device application

Principal Investigator

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Review Section

Research Institution

シリコン系スーパーアトム構造の高密度集積と新機能材料創成

Principal Investigator

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PN制御シリコン系ナノ結晶集積構造におけるキャリア輸送とエレクトロルミネッセンス

Principal Investigator

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Research Institution

The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state control

Principal Investigator

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Research Institution

Control of Silicon quantum structures and its application to room-temperature device operation

Principal Investigator

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[Journal Article] Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack2014

Author(s)

Journal Title

Data Source

[Journal Article] Characterization of Interfaces between Chemically-Cleaned or Thermally-Oxidized Germanium and Metals2010

Author(s)

Journal Title

Data Source

[Journal Article] Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quaatum Dots2007

Author(s)

Journal Title

Data Source

[Journal Article] Characterization of Electronic Chareed States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique2007

Author(s)

Journal Title

Data Source

[Journal Article] Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots2007

Author(s)

Journal Title

Data Source

[Journal Article] Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique2007

Author(s)

Journal Title

Data Source

[Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique2005

Author(s)

Journal Title

Murakami Hideki 村上秀樹

MURAKAMI Hideki 村上秀樹