TAKEHIRO Shinobu 竹廣忍

Researcher Number	70344736
Affiliation (based on the past Project Information) *help	2003 – 2005: 東北大学, 電気通信研究所, 助手
Review Section/Research Field	Except Principal Investigator Applied materials science/Crystal engineering / Electronic materials/Electric materials
Keywords	Except Principal Investigator group-IV semiconductor / SiGeC / エピタキシャル成長 / CVD / IV族半導体 / resonant tunneling / quantum effect / electronic-band modulation / atomic-layer control / 局所歪 … More / 量子トンネル構造 / 共鳴トンネル / 量子効果 / 電子帯変調 / 原子層制御 / 3-dimensional structure / epitaxial growth / chemical vapor deposition / artificial crystal / atomic layer growth / heterostructure / MBE / 立体加工 / 人工結晶 / 原子層積層 / ヘテロ構造 Less

Electronicband modulation and formation of quantum tunneling structures by atomic-layer control of group-IV semiconductors
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Creation of Artificial Crystal with Atomically-Controlled Group-IV Semiconductor Heterostructures
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University

All 2005 2004

All Journal Article

[Journal Article] Sidewall Protection by Nitrogen, Oxygen in Poly-Si_<1-x>Ge_x Anisotropic Etching Using Cl_2/N_2/O_2 Plasma2005
- Author(s)
  H.-S.Cho, S.Takehiro, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 239-243
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Relationship between Impurity (B or P), Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment2004
- Author(s)
  J.Noh, S.Takehiro, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 77-81
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Fabrication of 0.12-μm pMOSFETs on High Ge Fraction Si/Si_<1-x>Ge_x/Si(100) heterostructure with Ultrashallow Source/Drain Formed using B-Doped SiGe CVD2004
- Author(s)
  D.Lee, S.Takehiro, M.Sakuraba, J.Murota, T.Tsuchiya
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 254-259
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031

1. MUROTA Junichi (70182144)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
2. SAKURABA Masao (30271993)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. 櫻場政夫

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results

TAKEHIRO Shinobu 竹廣忍

Research Projects

Research Products

Co-Researchers

Electronicband modulation and formation of quantum tunneling structures by atomic-layer control of group-IV semiconductors

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Creation of Artificial Crystal with Atomically-Controlled Group-IV Semiconductor Heterostructures

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Sidewall Protection by Nitrogen, Oxygen in Poly-Si_<1-x>Ge_x Anisotropic Etching Using Cl_2/N_2/O_2 Plasma2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] Relationship between Impurity (B or P), Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Fabrication of 0.12-μm pMOSFETs on High Ge Fraction Si/Si_<1-x>Ge_x/Si(100) heterostructure with Ultrashallow Source/Drain Formed using B-Doped SiGe CVD2004

Author(s)

Journal Title

Description

Data Source

TAKEHIRO Shinobu 竹廣 忍

Research Projects

Research Products

Co-Researchers

Electronicband modulation and formation of quantum tunneling structures by atomic-layer control of group-IV semiconductors

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Creation of Artificial Crystal with Atomically-Controlled Group-IV Semiconductor Heterostructures

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Sidewall Protection by Nitrogen, Oxygen in Poly-Si_<1-x>Ge_x Anisotropic Etching Using Cl_2/N_2/O_2 Plasma2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] Relationship between Impurity (B or P), Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Fabrication of 0.12-μm pMOSFETs on High Ge Fraction Si/Si_<1-x>Ge_x/Si(100) heterostructure with Ultrashallow Source/Drain Formed using B-Doped SiGe CVD2004

Author(s)

Journal Title

Description

Data Source

TAKEHIRO Shinobu 竹廣忍