Takakura Kenichiro 高倉健一郎

… Alternative Names

高倉健一郎タカクラケンイチロウ

TAKAKURA Kenichirou 高倉健一郎

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Researcher Number	70353349
Other IDs
Affiliation (Current)	2025: 熊本高等専門学校, 電子情報教育部門情報通信エレクトロニクス工学分野, 教授 2025: 熊本高等専門学校, 電子情報システム工学系TEグループ, 教授
Affiliation (based on the past Project Information) *help	2022 – 2024: 熊本高等専門学校, 電子情報システム工学系TEグループ, 准教授 2019 – 2021: 熊本高等専門学校, 拠点化プロジェクト系先端研究コアグループ, 准教授 2015: 熊本高等専門学校, その他部局等, 准教授 2013 – 2015: 熊本高等専門学校, 情報通信エレクトロニクス工学科, 准教授 2007: Kumamoto National College of Technology, Department of Electronics Engineering, Associated Professor … More 2006: 熊本電波工業高等専門学校, 助教授 2006: 熊本電波工業高等専門学校, 電子工学科, 助教授 2005: 熊本電波工業高等専門学校, 電子工学科, 助手 2004: Kumamoto National College of Technology, Department of Electronic Engineering, Associate Researcher, 電子工学科, 助手 2003: 熊本電波工業高等専門学校, 電子工学科, 助手 Less
Review Section/Research Field	Principal Investigator Basic Section 31010:Nuclear engineering-related / Electron device/Electronic equipment / Environmental technology/Environmental materials Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Inorganic materials/Physical properties / Engineering fundamentals / Physical properties of metals
Keywords	Principal Investigator 酸化ガリウム / 透明導電膜 / 耐環境強化 / 電子回路 / 放射線 / 半導体素子の耐放射線性 / 廃炉問題 / 放射線損傷 / 電子デバイス / 廃炉ロボット … More / ガンマ線 / 放射線照射 / フレキシブルデバイス / 酸化物半導体 / 透明電極薄膜 / 光吸収係数 / 不純物ドーピング / 結晶成長 … More Except Principal Investigator MOSFET / SiGe / 照射損傷 / proton / radiation damage / 歪Si / 高温照射 / 電子線 / 陽子線 / 格子欠陥 / 半導体デバイス / 熱光発電セル / 結晶成長 / データ駆動科学 / シリサイド半導体 / SiC / recovery / induced lattice defect / SOI transisor / SiC transistor / electron / GaN LED / 特性劣化 / 宇宙環境 / 放射線 / Recovery by annealing / Induced lattice defects / Degradation / SOI MOS / InGaAs photodiode / Electron / High energy particle / Radiation damage / 高エネルギー粒子 / 回復 / 熱処理 / 劣化 / 宇宙空間 / 高工ネルギー粒子 Less

データ駆動科学によるシリサイド大型結晶開発と高効率熱光発電セルへの応用
- Principal Investigator
  
  鵜殿治彦
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Ibaraki University
原子力発電所等高放射線環境下で動作可能な電子回路の開発Principal Investigator
- Principal Investigator
  
  高倉健一郎
- Project Period (FY)
  2019 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 31010:Nuclear engineering-related
- Research Institution
  National Institute of Technology, Kumamoto College
Fabrication of thin film flexible transistor using gallium oxidePrincipal Investigator
- Principal Investigator
  
  Takakura Kenichiro
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute of Technology, Kumamoto College
酸化ガリウムへのドーピングによる透明電極膜の導電率向上Principal Investigator
- Principal Investigator
  
  高倉健一郎
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Environmental technology/Environmental materials
- Research Institution
  Kumamoto National College of Technology
Radiation damage mechanism of advanced semiconductor materials and devices
- Principal Investigator
  
  SHIGAKI Kazuasda
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Engineering fundamentals
- Research Institution
  Kumamoto National College of Technology
Irradiation temperature dependence of advanced semiconductor devices
- Principal Investigator
  
  KUDOU Tomohiro
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Kumamoto National College of Technology
Study on radiation damages of semiconductor devices for high and low temperature
- Principal Investigator
  
  SHIGAKI Kazusada
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Physical properties of metals
- Research Institution
  Kumamoto National College of Technology

All 2024 2023 2022 2020 2015 2013 2007 2006 2005 2004 2003 Other

All Journal Article Presentation

[Journal Article] Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation2024
- Author(s)
  Takakura Kenichiro、Editorial Office、Matsumoto Kensuke、Tateishi Kousei、Yoneoka Masashi、Tsunoda Isao、Suzuki Shigekazu、Kawatsuma Shinji
- Journal Title
  
  Journal of Robotics and Mechatronics
  
  Volume: 36 Issue: 1 Pages: 88-94
- DOI
  10.20965/jrm.2024.p0088
- ISSN
  0915-3942, 1883-8049
- Year and Date
  2024-02-20
- Language
  English
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K05337
[Journal Article] Low frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistor with different gate length and orientation2020
- Author(s)
  K. Takakura, V. Putcha, E. Simoen, A.R. Alian, U. Peralagu, N. Waldron, B. Parvais, N. Collaert
- Journal Title
  
  IEEE. Transaction on Electron Device
  
  Volume: - Issue: 8 Pages: 3062-3068
- DOI
  10.1109/ted.2020.3002732
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05337
[Journal Article] Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors2020
- Author(s)
  Takakura K、Putcha V、Simoen E、Alian A R、Peralagu U、Waldron N、Parvais B、Collaert N
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 36 Issue: 2 Pages: 024003-024003
- DOI
  10.1088/1361-6641/abce8c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05337
[Journal Article] Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering2013
- Author(s)
  K. Ishibashi, R. Aida, M. Takahara, J. Kudou, I. Tsunoda, K. Takakura, T. Nakashima, M. Shibuya, K. Murakami
- Journal Title
  
  Phys. Status Solidi
  
  Volume: C10 Pages: 1588-1591
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25820149
[Journal Article] Optical property and crystalline quarity Si and Ge added β-Ga_2O_3 thin films2007
- Author(s)
  K. Takakura, T. Kudou, et. al.
- Journal Title
  
  Journal of Materials Science Materials in Electronics 19
  
  Pages: 167-170
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] Optical property and crystalline quarity Si and Ge added □-Ga2O3 thin films2007
- Author(s)
  K. Takakura, T. Kudou, et. al.
- Journal Title
  
  Journal of Materials Science Materials in Electronics 19
  
  Pages: 167-170
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] Optical property and crystalline quarity Si and Ge added β-Ga_2O_3 thin films2007
- Author(s)
  K.Takakura, T.Kudou, et. al.
- Journal Title
  
  Journal of Materials Science Materials in Electronics 19
  
  Pages: 167-170
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] 不純物添加β-Ga_2O_3の光吸収特性2006
- Author(s)
  高倉健一郎
- Journal Title
  
  第20回熊本県産学官技術交流会予稿集 20
  
  Pages: 68-69
- Data Source
  KAKENHI-PROJECT-17710068
[Journal Article] Optical property and crystallinities of Si and Ge added β-Ga_2O_3 thin films2006
- Author(s)
  高倉健一郎
- Journal Title
  
  Proceedings of the 6^<th> International Conference on Materials for Microelectronics and nanoengineering (MFMN2006) 1
  
  Pages: 138-138
- Data Source
  KAKENHI-PROJECT-17710068
[Journal Article] Radiation source dependence of device performance degradation for 4H-SiC MESFETs2006
- Author(s)
  K.Takakura他
- Journal Title
  
  Superlattice and Microstructure 40
  
  Pages: 623-623
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] β-Ga_2O_3への不純物添加効果2006
- Author(s)
  高倉健一郎
- Journal Title
  
  第53回応用物理学関係連合講演会講演予稿集 2
  
  Pages: 693-693
- Data Source
  KAKENHI-PROJECT-17710068
[Journal Article] Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons2006
- Author(s)
  K.Takakura et al.
- Journal Title
  
  Materials Science in Semiconductor Processing, 9
  
  Pages: 292-295
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] スパッタ法によるβ-Ga_2O_3膜の作製2005
- Author(s)
  高倉健一郎
- Journal Title
  
  秋季第66回応用物理学会学術講演会予稿集 66
  
  Pages: 544-544
- Data Source
  KAKENHI-PROJECT-17710068
[Journal Article] Effects of radiation-induced defects on device performance in electron irradiated SiC-MESFETs2005
- Author(s)
  H.Ohyama, K.Takakura, T.Kudo 他
- Journal Title
  
  proceeding of the 11^<th> International Conference on Defects : Recognition and Physics in Semiconductors, DRIP XI, 15-19
  
  Pages: 78-78
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] 透明電極用材料β-Ga_2O_3の作製(II)2005
- Author(s)
  高倉健一郎
- Journal Title
  
  熊本電波工業高等専門学校研究紀要 32
  
  Pages: 37-42
- Data Source
  KAKENHI-PROJECT-17710068
[Journal Article] Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons2005
- Author(s)
  K.Takakura, H.Ohyama, T.Kudo 他
- Journal Title
  
  proceeding of the 11^<th> International Conference on Defects : Recognition and Physics in Semiconductors, DRIP XI 15-19
  
  Pages: 101-101
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons2005
- Author(s)
  K.Takakura et al.
- Journal Title
  
  proceeding of the 11^<th> International Conference on Defects : Recognition and Physics in Semiconductors, DRIP XI
  
  Pages: 101-101
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradition2004
- Author(s)
  K.Hayama, K.Takakura, H.Ohyama, A.Marcha, E.Simoen, C.Claeys, J.M.Rafi, M.Kokkoris
- Journal Title
  
  Microelectron.Reliab. 44
  
  Pages: 1721-1726
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Electron irradiation effect on thermal donors in CZ-Si2004
- Author(s)
  K.Takakura, H.Ohyama, H.Murakawa, T.Yoshida, J.M.Rafi, R.Job, A.Ulyashin, E.Simoen, C.Claeys
- Journal Title
  
  Eur.Phys.J.Appl.Phys. 27
  
  Pages: 133-135
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs2004
- Author(s)
  K.Hayama, K.Takakura, H.Ohyama, J.M.Rafi, A.Mercha, Simoen, C.Claeys
- Journal Title
  
  IEEE Trans.on Nucl.and Sci 51
  
  Pages: 3795-3800
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damages of InGaAs photodiodes by high-temperature electron irradiation2004
- Author(s)
  H.Ohyama, K.Takakura, M.Nakabayashi, T.Hirao, S.Onoda, T.Kamiya, E.Simoen, C.Claeys, S.Kuboyama, K.Oka, S.Matsuda
- Journal Title
  
  Nucl.Instrum.Methods B 219-220
  
  Pages: 718-721
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Electron irradiation effect on thermal donors in CZ-Si2004
- Author(s)
  K.Takakura et al.
- Journal Title
  
  Eur.Phys.J.Appl.Phys. Vol.27
  
  Pages: 133-135
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damage induced in Si photodiodes by high-temperature neutron irradiation2003
- Author(s)
  H.Ohyama, E.Simoen, C.Claeys, K.Takakura, T.Jono, H.Matsuoka, J.Uemura, T.Kishikawa
- Journal Title
  
  Journal of Materials Science. 14
  
  Pages: 437-440
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Effects of irradiation temperature on radiation damage in electron-irradiated MOS FETs2003
- Author(s)
  H.Ohyama, K.Hayama, K.Takakura, E.Simoen, C.Claeys
- Journal Title
  
  Microelectronic Engineering 66
  
  Pages: 530-535
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damage of Si photodides by high-temperature irradiation2003
- Author(s)
  H.Ohyama, K.Takakura, K.Shigaki, T.Jono, E.Simoen, C.Claeys, J.Uemura, T.Kishikawa
- Journal Title
  
  Microelectronic Engineering 66
  
  Pages: 536-541
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Influence of irradiation temperature on electron-irradiated STI diodes2003
- Author(s)
  H.Ohyama, K.Hayama, K.Takakura, T.Miura, K.Shigaki, T.Jono, E.Simoen, A.Poyai, C.Claeys
- Journal Title
  
  Journal of Materials Science 14
  
  Pages: 451-454
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Damage coefficient in high-temperature particle- and g-irradiated silicon p-i-n diode2003
- Author(s)
  H.Ohyama, K.Takakura, K.Hayama, S.Kuboyama, Y.Deguchi, S.Matsuda, E.Simoen, C.Claeys
- Journal Title
  
  Appl.Phys.Lett. 82
  
  Pages: 296-298
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Induced lattice defects in InGaAs photodides by high-temperature electron irradiation2003
- Author(s)
  H.Ohyama, K.Kobayashi, J.Vanhellemont, E.Simoen, C.Claeys, K.Takakura, T.Hirao, S.Onoda
- Journal Title
  
  Physica B 340-342
  
  Pages: 337-340
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damage in Si photodiodes by high temperature irradiation2003
- Author(s)
  H.Ohyama, K.Takakura, E.Simoen, K.Kobayashi, C.Claeys, J.Uemura, T.Kishikawa
- Journal Title
  
  Physica E 16
  
  Pages: 533-538
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20-MeV protons2003
- Author(s)
  K.Takakura, H.Ohyama, A.Ueda, M.Nakabayashi, K.Hayama, K.Kobayashi, E.Simoen, K.Kobayashi, E.Simoen, A.Mercha, C.Claeys
- Journal Title
  
  Semicond.Sci.Technology 18
  
  Pages: 506-511
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Comparison of electron irradiation effect on thermal donors in CZ and oxygen doped FZ silicon2003
- Author(s)
  K.Takakura, H.Ohyama, T.Yoshida, H.Murakawa, J.M.Rafi, R.Job, A.Ulyashin, E.Simoen, C.Claeys
- Journal Title
  
  Physica B 340-342
  
  Pages: 1022-1025
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Irradiation temperature dependence of radiation damage in STI diodes2003
- Author(s)
  H.Ohyama, K.Hayama, K.Takakura, T.Miura, K.Shigaki, T.Jono, E.Simoen, A.Poyai, C.Claeys
- Journal Title
  
  Microelectronic Engineering 66
  
  Pages: 517-521
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation
- Author(s)
  H.Ohyama, K.Takakura, T.Kudo 他
- Journal Title
  
  Physica B (掲載予定)(to be published)
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] Effect of deep levels and interface states on the lifetime control of trench-IGBTs by electron irradiation
- Author(s)
  K.Takakura, H.Ohyama, T.Kudo 他
- Journal Title
  
  Physica B (掲載予定)(to be published)
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature
- Author(s)
  K.Takakura, H.Ohyama, T.Kudo 他
- Journal Title
  
  Physica B (掲載予定)(to be published)
- Data Source
  KAKENHI-PROJECT-17560602
[Presentation] 廃炉ロボット用マイコン及びメモリの放射線耐性評価2023
- Author(s)
  松本健佑、米岡将士、角田功、高倉健一郎
- Organizer
  第１４回半導体材料・デバイスフォーラム
- Data Source
  KAKENHI-PROJECT-19K05337
[Presentation] 半導体素子の放射線耐性の評価2023
- Author(s)
  松本健佑、米岡将士、角田功、高倉健一郎
- Organizer
  令和4年度原子力フォーラム
- Data Source
  KAKENHI-PROJECT-19K05337
[Presentation] 廃炉ロボット用マイコン及びメモリの放射線耐性評価2023
- Author(s)
  松本健佑、米岡将士、角田功、高倉健一郎
- Organizer
  令和5年度原子力フォーラム
- Data Source
  KAKENHI-PROJECT-19K05337
[Presentation] 放射線環境下における半導体素子の耐性評価2022
- Author(s)
  吉田一真、米岡将士、高倉健一郎
- Organizer
  国際原子力人材育成イニシアティブ事業フォーラム
- Data Source
  KAKENHI-PROJECT-19K05337
[Presentation] Crystalline quality evaluation of b-Ga2O3/Al2O3 grown by thermal annealing2015
- Author(s)
  H. Ishimoto， H. Ogata， S. Koba， I. Tsunoda， K. Takakura
- Organizer
  7th Semiconductor Materials and Devices Forum
- Place of Presentation
  熊本
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-25820149
[Presentation] Investigation of crystal orientation of -Ga2O3 thin film grown on sapphire substrate by room temperature deposition and subsequent annealing2015
- Author(s)
  H. Ishimoto, H. Ogata, S. Koba, I. Tsunoda, and K. Takakura
- Organizer
  International Conference on Gallium Oxide and related materials 2015
- Place of Presentation
  Kyoto
- Year and Date
  2015-11-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25820149
[Presentation] Investigation of relationships between physical optoelectrical property properties and void grains in RF magnetron sputtered b-Ga2O3 thin films2013
- Author(s)
  R. Aida, K. Ishibashi, M. Takahara, J. Kudou, I. Tsunoda, K. Takakura
- Organizer
  27th International Conference on Defects in Semiconductors
- Place of Presentation
  Italy
- Data Source
  KAKENHI-PROJECT-25820149
[Presentation] Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering2013
- Author(s)
  K. Ishibashi, R. Aida, M. Takahara, J. Kudou, I. Tsunoda, K. Takakura, T. Nakashima, M. Shibuya, K. Murakami
- Organizer
  The 40th International Symposium on Compound Semiconductors
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-25820149
[Presentation] Evaluation of crystal structure and optical properties of β-Ga2O3 as-deposited and after annealed.
- Author(s)
  H. Ishimoto, K. Ishibashi, R. Aida, I. Tsunoda, K. Takakura, K. Murakami
- Organizer
  33th Electronic Materials Symposium
- Place of Presentation
  Sizuoka
- Year and Date
  2015-07-15 – 2015-07-17
- Data Source
  KAKENHI-PROJECT-25820149
[Presentation] Investigation of relationships between film thickness and optical absorption coefficient of β-Ga2O3 film
- Author(s)
  M. Izawa, H. Ishimoto, T. Goto, R. Aida, K. Ishibashi, I. Tsunoda, K. Takakura, K. Murakami
- Organizer
  33th Electronic Materials Symposium
- Place of Presentation
  Shizuoka
- Year and Date
  2015-07-15 – 2015-07-17
- Data Source
  KAKENHI-PROJECT-25820149

1. SHIGAKI Kazusada (50044722)

# of Collaborated Projects: 3 results

# of Collaborated Products: 3 results
2. OHYAMA Hidenori (80152271)

# of Collaborated Projects: 3 results

# of Collaborated Products: 19 results
3. HAYAMA Kiyoteru (00238148)

# of Collaborated Projects: 3 results

# of Collaborated Products: 7 results
4. KUDOU Tomohiro (90225160)

# of Collaborated Projects: 3 results

# of Collaborated Products: 3 results
5. HAKATA Tetsuya (60237899)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. 鵜殿治彦 (10282279)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 宇佐美徳隆 (20262107)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Takakura Kenichiro 高倉 健一郎

高倉 健一郎 タカクラ ケンイチロウ

TAKAKURA Kenichirou 高倉 健一郎

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データ駆動科学によるシリサイド大型結晶開発と高効率熱光発電セルへの応用

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原子力発電所等高放射線環境下で動作可能な電子回路の開発Principal Investigator

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Fabrication of thin film flexible transistor using gallium oxidePrincipal Investigator

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酸化ガリウムへのドーピングによる透明電極膜の導電率向上Principal Investigator

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Radiation damage mechanism of advanced semiconductor materials and devices

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Irradiation temperature dependence of advanced semiconductor devices

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Study on radiation damages of semiconductor devices for high and low temperature

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[Journal Article] Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation2024

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[Journal Article] Low frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistor with different gate length and orientation2020

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[Journal Article] Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors2020

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[Journal Article] Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering2013

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[Journal Article] Optical property and crystalline quarity Si and Ge added β-Ga_2O_3 thin films2007

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[Journal Article] Optical property and crystalline quarity Si and Ge added □-Ga2O3 thin films2007

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[Journal Article] Optical property and crystalline quarity Si and Ge added β-Ga_2O_3 thin films2007

Takakura Kenichiro 高倉健一郎

高倉健一郎タカクラケンイチロウ

TAKAKURA Kenichirou 高倉健一郎