TOSHIHIKO Kanayama 金山敏彦

Researcher Number	70356799
Affiliation (based on the past Project Information) *help	2011: 独立行政法人産業技術総合研究所, 情報通信・エレクトロニクス分野, 研究統括 2010: 独立行政法人産業技術総合研究所, ナノ電子デバイス研究センター, センター長 2009: National Institute of Advanced Industrial Science and Technology, ナノ電子デバイス研究センター, 研究センター長 2008 – 2009: National Institute of Advanced Industrial Science and Technology, ナノ電子デバイス研究センター, 研究センター長 2007: National Institute of Advanced Industrial Science and Technology, 次世代半導体研究センター, 副研究センター長 … More 2006: 東京大学, 産業技術総合研究所・次世代半導体研究センター, 副センター長(研究職) 2004 – 2006: 独立行政法人産業技術総合研究所, 次世代半導体研究センター, 副研究センター長 2005: 産業技術総合研究所, 次世代半導体研究センター, 副センター長(研究職) 2004 – 2005: (独)産業技術総合研究所, 次世代半導体研究センター, 副研究センター長 Less
Review Section/Research Field	Principal Investigator Nanomaterials/Nanobioscience / Science and Engineering Except Principal Investigator Physical properties of metals / Plasma science
Keywords	Principal Investigator ナノ材料 / 原子分子処理 / electronic materials / nano-materials / scanning tunneling microscopy / atomic process / surface and interface / 反転層形成 / カーボンナノチューブトランジスタ / 電荷移動型ドーピング … More / イオントラップ / シリコン表面 / 走査トンネルスペクトル / 第一原理計算 / 走査トンネル顕微鏡 / 遷移金属内包シリコンクラスター / 電子・電気材料 / 走査プローブ顕微鏡 / 表面・界面物性 / 電気伝導度 / 光吸収スペクトル / シリコンクラスター / レーザアブレーション / シリコン / クラスター / 超薄膜 / ナノエレクトロニクス / 遷移金属内包Siクラスター … More Except Principal Investigator イオントラップ / イオンとラップ / シミュレーション / 質量分析 / クラスター / ナノ材料 / 重力コード / 高機能イオントラップ / 金山とラップ / プラズマ科学 / 非中性プラズマ / アトムテクノロジー / 四重極電場 Less

Advanced semiconducting devices using regulated nano-space materialsPrincipal Investigator
- Principal Investigator
  
  KANAYAMA Toshihiko (TOSHIHIKO Kanayama)
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  National Institute of Advanced Industrial Science and Technology
四重極イオントラップの多重極化によるボロン・クラスター集合固体の創製
- Principal Investigator
  
  木村薫
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Physical properties of metals
- Research Institution
  The University of Tokyo
新しい高機能荷電粒子トラップのプラズマ科学的基礎研究
- Principal Investigator
  
  際本泰士
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Plasma science
- Research Institution
  Kyoto University
Synthesis of metal encapsulated Si clusters and its application to formation of interfacial nanostructuresPrincipal Investigator
- Principal Investigator
  
  KANAYAMA Toshihiko
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 Other

All Journal Article Presentation Patent

[Journal Article] Electronic properties of W-encapsulated Si cluster film on Si (100) substrates2012
- Author(s)
  Sunjin Park, Noriyuki Uchida, Toshihiko Kanayama
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 111 Issue: 6
- DOI
  10.1063/1.3695994
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Ab Initio Structure Characterization for the Amorphous Assembly of Si Clusters Encapsulating Transition Metal2011
- Author(s)
  T.Miyazaki, N.Uchida, T.Kanayama
- Journal Title
  
  Mater.Res.Soc.Symp.Proc.
  
  Volume: 1,321 Pages: 307-312
- DOI
  10.1557/opl.2011.811
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters2011
- Author(s)
  N.Uchida, T.Miyazaki, Y.Matsushita, K.Samaeshima, T.Kanayama
- Journal Title
  
  Mater.Res.Soc.Symp.Proc.
  
  Volume: 1,321 Pages: 361-366
- DOI
  10.1557/opl.2011.1250
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] New semiconducting silicides assembled from transition-metal-encapsulating Si clusters2011
- Author(s)
  N.Uchida, T.Miyazaki, Y.Matsushita, K.Samaeshima, T.Kanayama
- Journal Title
  
  Thin Solid Films
  
  Volume: 519 Issue: 24 Pages: 8456-8460
- DOI
  10.1016/j.tsf.2011.05.019
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] First principles structure modeling for amorphous Si-rich transition metal silicides2010
- Author(s)
  Takehide Miyazaki, Noriyuki Uchida, Toshihiko Kanayama
- Journal Title
  
  Phys. Status Solidi (c) 7
  
  Pages: 636-639
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] First principles structure modeling for amorphous Si-rich transition metal silicides2010
- Author(s)
  Takehide Miyazaki, Noriyuki Uchida, Toshihiko Kanayama
- Journal Title
  
  Phys.Status Solidi (c) 7
  
  Pages: 636-639
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Structure determination of W-capsulated Si cage clusters by x-ray absorption fine structure spectra2009
- Author(s)
  Zhihu Sun, Hiroyuki Oyanagi, Noriyuki Uchida, Takehide Miyazaki, Toshihiko Kanayama
- Journal Title
  
  Journal of Physics D: Applied Physics 42
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Structure determination of W-capsulated Si cage clusters by x-ray absorption fine structure spectra2009
- Author(s)
  Zhihu Sun, Hiroyuki Oyanagi, Noriyuki Uchida, Takehide Miyazaki, Toshihiko Kanayama
- Journal Title
  
  J. Phys D: Appl. Phys. 42
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2008
- Author(s)
  Noriyuki Uchida, Hiroshi Kintou, Yusuke Matsushita, Tetsuya Tada, Toshihiko Kanayama
- Journal Title
  
  pplied Physics Express (APEX) 1
- NAID
  10025083656
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Electric field effect in amorphous2008
- Author(s)
  Noriyuki Uchida, Takehide Miyazaki, Yusuke Matsushita, Kenichiro Samaeshima, Toshihiko Kanayama
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 1 Pages: 121502-121502
- DOI
  10.1143/apex.1.121502
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2008
- Author(s)
  Noriyuki Uchida, Hiroshi Kintou, Yusuke Matsushita, Tetsuya Tada, Toshihiko Kanayama
- Journal Title
  
  Applied Physics Express (APEX) 1
- NAID
  10025083656
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Local modification of electronic structure of Si(111)-7x7 surfaces by forming molybdenum-encapsulating Si clusters2007
- Author(s)
  N.Uchida, H.Yahata, T.Kanayama, and L.Bolotov
- Journal Title
  
  Applied Physics Letters 91
  
  Pages: 63109-63109
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] First-principles theory for Si-based,atomically thin layered semiconduct or crystal2007
- Author(s)
  T.Miyazaki and T.Kanayama
- Journal Title
  
  Applied Physics Letters 91
  
  Pages: 82107-82107
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Local modification of electronic st ructure of Si (111)-7x7 surfaces by forming molybdenum-encapsulating Si clusters2007
- Author(s)
  Noriyuki Uchida, Hiroshi. Yahata, To shihiko Kanayama, Leonid Bolotov
- Journal Title
  
  Applied Physics Letters 91
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] A Multipole Ion Trap as Cluster-ion Source2007
- Author(s)
  N.Uchida, Y.Ohishi, T.Sho, K.Kimura, T.Kanayama
- Journal Title
  
  Jpn. J. Appl. Phys.
- NAID
  40015465549
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] First-principles theory for Si-based atomically thin layered semiconductor crystal2007
- Author(s)
  Takehide Miyazaki, Toshihiko Kanayama
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 91 Issue: 6
- DOI
  10.1063/1.2767205
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] A Multipole Ion Trap as Cluster-ion Source2007
- Author(s)
  N.Uchida, Y.Ohishi, T.Sho, K.Kimura, T.Kanayama
- Journal Title
  
  Japanese Journal of Applied Physics 46
- NAID
  40015465549
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] First-principles theory for Si-based, atomically thin layered semiconductor crystal2007
- Author(s)
  Takehide Miyazaki, Toshihiko Kanayama
- Journal Title
  
  Applied Physics Letters 91
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19051017
[Journal Article] Ultra-thin layered semiconductor : Si-rich transition metal silicide2007
- Author(s)
  T.Miyazaki, T.Kanayama
- Journal Title
  
  Jpn. J. Appl. Phys. 46
- NAID
  10018495388
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] Ultra-thin layered semiconductor : Si-rich transition metal silicide2007
- Author(s)
  T.Miyazaki, T.Kanayama
- Journal Title
  
  Japanese Journal of Applied Physics 46・2
- NAID
  10018495388
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] A Multipole Ion Trap as Cluster-ion Source2007
- Author(s)
  N.Uchida, Y.Ohishi, T.Sho, K.Kimura, T.Kanayama
- Journal Title
  
  Japanese Journal of Applied Physics 46・
- NAID
  40015465549
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] Stabilization Mechanism of Sii2 Cage Clusters by Encapsulation of a Transition Metal Atom : A density-functional theory study2006
- Author(s)
  N.Uchida, T.Miyazaki, T.Kanayama
- Journal Title
  
  Phys. Rev. B74
  
  Pages: 205427-205427
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] Stabilization Mechanism of Si12 Cage Clusters by Encapsulation of a Transition Metal Atom : A density-functional theory study2006
- Author(s)
  N.Uchida, T.Miyazaki, T.Kanayama
- Journal Title
  
  Physical Review B 74・20
  
  Pages: 205427-205427
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] Carborane superclusters formed by ion molecule reactions in an ion trap2005
- Author(s)
  H.Hiura, T.Kanayama
- Journal Title
  
  J. Molecular Structure 735・736
  
  Pages: 367-374
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] Carborane superclusters formed by ion molecule reactions in an ion trap2005
- Author(s)
  H.Hiura, T.Kanayama
- Journal Title
  
  J.Molecular Structure 735
  
  Pages: 367-374
- Data Source
  KAKENHI-PROJECT-16654095
[Journal Article] Carborane superclusters formed by ion-molecule reactions in an ion trap2005
- Author(s)
  H.Hiura, T.Kanayama
- Journal Title
  
  Journal of Molecular Structure 735-736
  
  Pages: 367-374
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] Carborane superclusters formed by ion-molecule reactions in an ion trap2005
- Author(s)
  H.Hiura, T.Kanayama
- Journal Title
  
  J. Molecular Structure 735-736
  
  Pages: 367-374
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] Local modification of electronic structure of Si (111)-7x7 surfaces by forming molybdenum-encapsulating Si clusters
- Author(s)
  N.Uchida, H.Yahata, T.Kanayama, L.Bolotov
- Journal Title
  
  Appl. Phys. Lett.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Journal Article] Local modification of electronic structure of Si (111)-7x7 surfaces by forming molybdenum-encapsulating Si clusters
- Author(s)
  N.Uchida, H.Yahata, T.Kanayama, L.Bolotov
- Journal Title
  
  Applied Physics Letters
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Patent] 半導体コンタクト構造及びその形成方法2014
- Inventor(s)
  内田紀行, 金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-503769
- Filing Date
  2014-08-26
- Acquisition Date
  2016-11-25
- Description
  日本移行
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 半導体コンタクト構造及びその形成方法2013
- Inventor(s)
  内田紀行, 金山敏彦, 岡田直也
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2013-02-25
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] THIN FILM OF METAL-SILICON COMPOUND AND PROCESS FOR PRODUCING THE THIN FILM OF THE METAL-SILICON COMPOUND2013
- Inventor(s)
  金山敏彦
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Acquisition Date
  2013-02-05
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] THIN FILM OF METAL SILICON COMPOUND AND PROCESS FORPRODUCING THETHIN FILM OFMETAL SILICON COMPOUND2013
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Acquisition Date
  2013-01-28
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2013
- Inventor(s)
  内田紀行, 宮崎剛英, 金山敏彦
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Acquisition Date
  2013-02-15
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 半導体コンタクト構造及びその形成方法2012
- Inventor(s)
  内田紀行、岡田直也、金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Number
  2012-049040
- Filing Date
  2012-03-06
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2011
- Inventor(s)
  内田紀行, 金山敏彦, 宮崎剛英
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Acquisition Date
  2011-01-14
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2011
- Inventor(s)
  内田紀行、金山敏彦、宮崎剛英
- Industrial Property Rights Holder
  産総研
- Acquisition Date
  2011-01-14
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2011
- Inventor(s)
  内田紀行, 金山敏彦, 宮崎剛英
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Acquisition Date
  2011-01-14
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] (旧名称)ナノ結晶凝集半導体材料及びその製造方法 (新名称)ナノ結晶半導体材料及びその製造方法2011
- Inventor(s)
  内田紀行, 金山敏彦
- Industrial Property Rights Holder
  国立研究開発法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2011-199630
- Filing Date
  2011-09-13
- Acquisition Date
  2015-05-29
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] ナノ結晶凝集半導体材料及びその製造方法2011
- Inventor(s)
  内田紀行、金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Number
  2011-199630
- Filing Date
  2011-09-13
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] ナノ結晶凝集半導体材料及びその製造方法2011
- Inventor(s)
  内田紀行, 金山敏彦
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2011-199630
- Filing Date
  2011-09-13
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] ナノ結晶凝集半導体材料及びその製造方法2010
- Inventor(s)
  内田紀行、金山敏彦
- Industrial Property Rights Holder
  産総研
- Industrial Property Number
  2010-207987
- Filing Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2010
- Inventor(s)
  内田紀行, 金山敏彦, 宮崎剛英
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2010-08-19
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2010
- Inventor(s)
  内田紀行、金山敏彦、宮崎剛英
- Industrial Property Rights Holder
  産総研
- Industrial Property Number
  2010-207987
- Filing Date
  2010-08-17
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] ナノ結晶凝集半導体材料及びその製造方法2010
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2010-207987
- Filing Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属硅化合物薄膜及其制造方法2010
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2010-08-25
- Acquisition Date
  2014-06-18
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2010
- Inventor(s)
  内田紀行, 宮崎剛英, 金山敏彦
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2010-253936
- Filing Date
  2010-11-12
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2010
- Inventor(s)
  内田紀行, 金山敏彦, 宮崎剛英
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2010-182188
- Filing Date
  2010-08-17
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2009-037261
- Filing Date
  2009-02-20
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2009-02-25
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2009-037261
- Filing Date
  2009-02-20
- Acquisition Date
  2014-01-31
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦、内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Filing Date
  2009-02-25
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2009
- Inventor(s)
  内田紀行、金山敏彦
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Number
  2009-191603
- Filing Date
  2009-08-21
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 薄膜トランジスタ2009
- Inventor(s)
  内田紀行, 金山敏彦
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2009-191603
- Filing Date
  2009-08-21
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2009-02-25
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2009-02-25
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2009
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2009-02-25
- Overseas
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2008
- Inventor(s)
  金山敏彦、内田紀行
- Industrial Property Rights Holder
  産業技術総合研究所
- Filing Date
  2008-02-28
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2008
- Inventor(s)
  金山敏彦、内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Number
  2008-048520
- Filing Date
  2008-02-28
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2008
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2008-048520
- Filing Date
  2008-02-28
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2008
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Filing Date
  2008-02-28
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] 金属珪素化合物薄膜及びその製造方法2008
- Inventor(s)
  金山敏彦, 内田紀行
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2008-230650
- Filing Date
  2008-09-09
- Data Source
  KAKENHI-PLANNED-19051017
[Patent] グラフェンを用いる半導体装置及びその製造方法2007
- Inventor(s)
  多田哲也, 金山敏彦, 日浦英文, 二瓶史行
- Industrial Property Rights Holder
  産総研, 日本電気(株)
- Industrial Property Number
  2007-052887
- Filing Date
  2007-03-02
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Patent] 層状物質及びこれを用いた半導体装置2006
- Inventor(s)
  宮剛英, 金山敏彦, 内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Number
  2006-198612
- Filing Date
  2006-07-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Patent] 層状物質及びこれを用いた半導体装置2006
- Inventor(s)
  宮崎剛英, 金山敏彦, 内田紀行
- Industrial Property Rights Holder
  (独)産業技術総合研究所
- Industrial Property Number
  2006-198612
- Filing Date
  2006-07-20
- Data Source
  KAKENHI-PROJECT-16201026
[Patent] 半導体装置及びその製造方法2006
- Inventor(s)
  多田哲也, 金山敏彦, 日浦英文, 東口達
- Industrial Property Rights Holder
  産総研, 日本電気(株)
- Industrial Property Number
  2006-315050
- Filing Date
  2006-11-22
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Patent] ドーパント材料、ドーパント材料の製造方法およびこれを用いた半導体素子2005
- Inventor(s)
  多田哲也, 金山敏彦, 日浦英文
- Industrial Property Rights Holder
  産総研, 日本電気(株)
- Industrial Property Number
  2005-001422
- Filing Date
  2005-01-06
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Patent] ドーパント材料、ドーパント材料の製造方法およびこれを用いた半導体素子2005
- Inventor(s)
  日浦英文, 多田哲也, 金山敏彦
- Industrial Property Rights Holder
  日本電気(株), 産業技術総合研究所
- Industrial Property Number
  2005-001422
- Filing Date
  2005-01-06
- Data Source
  KAKENHI-PROJECT-16201026
[Patent] 半導体装置及びその製造方法2005
- Inventor(s)
  多田哲也, 金山敏彦, 日浦英文
- Industrial Property Rights Holder
  産総研, 日本電気(株)
- Industrial Property Number
  2005-315627
- Filing Date
  2005-10-31
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201026
[Presentation] 遷移金属内包Siクラスター薄膜の電気伝導特性2012
- Author(s)
  岡田直也、内田紀行、金山敏彦
- Organizer
  第59回応用物理学関連学術講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Si・シリサイドナノ結晶コンポジット半導体膜の熱伝導率2012
- Author(s)
  内田紀行、大石祐治、黒崎健、山中伸介、多田哲也、金山敏彦
- Organizer
  第59回応用物理学関連学術講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Electric Conduction Mechanism of Amorphous Semiconductor Films Assembled from Transition-Metal-Encapsulating Silicon Clusters2011
- Author(s)
  N.Okada, N.Uchida, T.Kanayama
- Organizer
  International Conference of New Science Created by Materials with Nano Spaces : From Fundamentals to Applications
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2011-11-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Interfacial structure analysis of W-encapsulated Si cluster film on Si (100) substrates2011
- Author(s)
  S.J.Park, N.Uchida, T.Tada, T.Kanayama
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-09-14
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Ab Initio Molecular Dynamics Study for Vibrations in the Assembly of Transition-Metal-Encapsulating Si Clusters2011
- Author(s)
  T.Miyazaki, N.Uchida, T.Kanayama
- Organizer
  International Conference of New Science Created by Materials with Nano Spaces : From Fundamentals to Applications
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2011-11-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters2011
- Author(s)
  Noriyuki Uchida, Takehide Miyazaki, Yusuke Matsushita, Kenichiro Samaeshima, Toshihiko Kanayama
- Organizer
  2011 MRS Spring Meeting and Exhibit
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters2011
- Author(s)
  N.Uchida, T.Miyazaki, Y.Matsushita, K.Samaeshima, T.Kanayama
- Organizer
  2011 MRS Spring Meeting and Exhibit
- Place of Presentation
  San Francisco Marriott Marquis (San Francisco, CA, USA.)
- Year and Date
  2011-04-28
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスターが凝集したアモルファス材料の電子構造解析遷移金属内包Siクラスター凝集膜の構造解析2011
- Author(s)
  宮崎剛英、内田紀行、金山敏彦
- Organizer
  日本物理学会第66回年次大会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Ab Initio Structure Characterization for the Amorphous Assembly of Si Clusters Encapsulating Transition Metal2011
- Author(s)
  T.Miyazaki, N.Uchida, T.Kanayama
- Organizer
  2011 MRS Spring Meeting and Exhibit
- Place of Presentation
  San Francisco Marriott Marquis (San Francisco, CA, USA.)
- Year and Date
  2011-04-27
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Electronic properties of W-encapsulated Si cluster film on Si (100) substrates2011
- Author(s)
  N.Uchida, S.J.Park, T.Tada, T.Kanayama
- Organizer
  International Conference of New Science Created by Materials with Nano Spaces : From Fundamentals to Applications
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2011-11-24
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Electric Conduction Mechanism of Amorphous Semiconductor Films Assembled from Transition-Metal-Encapsulating Silicon Clusters2011
- Author(s)
  N.Okada, N.Uchida, T.Kanayama
- Organizer
  International Symposium on Clusters and Nanostructures
- Place of Presentation
  Jefferson Hotel, Richmond (Virginia, USA)
- Year and Date
  2011-11-07
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] New Semiconducting Silicides Assembled from Transition-Metal-Encapsulating Si Custers, Asia-Pacific Conference on Semiconducting Silicides2010
- Author(s)
  Toshihiko Kanayama, Noriyuki Uchida, and, Takehide Miyazaki
- Organizer
  Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010)
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスター凝集膜の構造解析2010
- Author(s)
  内田紀行、宮崎剛英、鮫島健一郎、松下祐介、金山敏彦、村上浩一
- Organizer
  日本物理学会第65回年次大会
- Place of Presentation
  岡山市,岡山大学
- Year and Date
  2010-03-22
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] New Semiconducting Silicides Assembled from Transition-Metal-Encapsulating Si Custer2010
- Author(s)
  Toshihiko Kanayama, Noriyuki Uchida, Takehide Miyazaki
- Organizer
  Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010)
- Place of Presentation
  茨城県つくば市
- Year and Date
  2010-07-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包シリコンクラスターが凝集したアモルファス材料の振動計算2010
- Author(s)
  宮崎剛英、内田紀行、金山敏彦
- Organizer
  日本物理学会2010年秋季大会
- Place of Presentation
  大阪府立大学(大阪府堺市)
- Year and Date
  2010-09-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスター半導体薄膜の合成と電気伝導特性評価2009
- Author(s)
  松下裕介, 内田紀行, 金藤浩史, 金山敏彦
- Organizer
  第56回応用物理学関係連合学術講演会
- Place of Presentation
  茨城県つくば市筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Amorphous Si-Rich Silicide Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2009
- Author(s)
  Noriyuki Uchida, Takehide Miyazaki, Toshihiko Kanayama
- Organizer
  The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  Utrecht, The Netherlands
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] First principles structure modeling for amorphous Si-rich transition metal silicides2009
- Author(s)
  Takehide Miyazaki, Noriyuki Uchida, Toshihiko Kanayama
- Organizer
  The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  Utrecht, The Netherlands
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] First principles structure modeling for amorphous Si-rich transition metal silicides2009
- Author(s)
  Takehide Miyazaki, Noriyuki Uchida, Toshihiko Kanayama
- Organizer
  The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  オランダ,ユトレヒト
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Synthesis of Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2009
- Author(s)
  Noriyuki Uchida, Yusuke Matsushita, Hiroshi Kintou, Tetsuya Tada, Toshihiko Kanayama
- Organizer
  International Conference on Nanoscience and Quantum Physics (nanoPHYS'09)
- Place of Presentation
  Minato-ku, Tokyo, Japan
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] シリコンリッチなアモルファス遷移金属シリサイドの構造と電子状態2009
- Author(s)
  宮崎剛英、内田紀行、金山敏彦
- Organizer
  日本物理学会2009年秋季大会
- Place of Presentation
  熊本市,熊本大学
- Year and Date
  2009-09-27
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスター半導体薄膜の合成と電界効果測定2009
- Author(s)
  松下祐介、内田紀行、金山敏彦
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市,富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Amorphous Si-Rich Silicide Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2009
- Author(s)
  Noriyuki Uchida, TakehideMiyazaki, Toshihiko Kanayama
- Organizer
  The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  オランダ,ユトレヒト
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Structure determination of W-capsulated Si cage clusters by x-ray absorption fine structure spectra2009
- Author(s)
  Z. Sun, H. Oyanagi, N. Uchida, T. Miyazaki, T. Kanayama
- Organizer
  第22回日本放射光学会年会
- Place of Presentation
  東京都文京区東京大学本郷キャンパス
- Year and Date
  2009-01-10
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Structure of WSin cage clusters probed by x-ray absorption fine structure spectra2009
- Author(s)
  H. Oyanagi, Z. Sun, N. Uchida, T. Miyazaki, T. Kanayama
- Organizer
  第22回日本放射光学会年会・放射光科学合同シンボジウム
- Place of Presentation
  東京都文京区東京大学本郷キャンパス
- Year and Date
  2009-01-12
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Structure of WSin cage clusters probed by x-ray absorption fine structurespectra2009
- Author(s)
  H. Oyanagi, Z. Sun, N. Uchida, T. Miyazaki, T. Kanayama
- Organizer
  PFシンポジウム
- Place of Presentation
  茨城県つくば市つくば国際会議場
- Year and Date
  2009-03-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Synthesis of Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2009
- Author(s)
  N. Uchida, H. Kintou, Y. Matsushita, T. Tada, T. Kanayama
- Organizer
  International Conference on Nanoscience and Quantum Physics (nanoPHYS'09)
- Place of Presentation
  東京都港区
- Year and Date
  2009-02-24
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] MoSi_nクラスター膜の熱処理に伴う構造変化2009
- Author(s)
  鮫島健一郎、内田紀行、松下裕介、村上浩一、兵藤宏、木村薫、金山敏彦
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市,富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Synthesis and Characterization of Clusters Assembled Films Composed of Transition-Metal Encapsulating Si Clusters"2008
- Author(s)
  Noriyuki Uchida, Hiroshi Kintou, Yusuke Matsushita, Tetsuya Tada, Kazuhiho Kirihara, Hiroyuki Oyanagi, Toshihiko Kanayama
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  Tsukuba, Ibaraki, Japan
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包シリコンクラスター薄膜の合成と電気伝導特性評価2008
- Author(s)
  内田紀行, 金藤浩史, 桐原和大, 大柳宏之, 金山敏彦
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学 (千葉県船橋市)
- Year and Date
  2008-03-30
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Theoretical Study of Single Gicfphene-1 ike Semiconductor Layer Made of Si and Transition Metal Atoms2008
- Author(s)
  T. Miyazaki, N. Uchida, T. Kanayama
- Organizer
  Materials Research Society (MRS) 2008 Fall Meeting
- Place of Presentation
  Boston USA
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Formation of Si6 ring clusters stabilized by a transition metal atom2008
- Author(s)
  Noriyuki Uchida, Yusuke Matsushita, Takehide Miyazaki, Hidefumi Hiura, Toshihiko Kanayama
- Organizer
  14th International Symposium on Small Particles and Inorganic Clusters
- Place of Presentation
  Valladolid, Spain
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包Siクラスター薄膜のラマン散乱測定2008
- Author(s)
  金藤浩史, 松下祐介, 内田紀行, 多田哲也, 金山敏彦, 村上浩一
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市中部大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属内包シンコンクラスター薄膜の合成と構造評価2008
- Author(s)
  内田紀行, 金藤浩史, 金山敏彦, 桐原和大, 大柳宏之, 木村薫
- Organizer
  日本物理学会第63回年次大会
- Place of Presentation
  近畿大学 (大阪府東大阪市)
- Year and Date
  2008-03-26
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Formation of Si_6 rins clusters stabilized hv a transition metal atom2008
- Author(s)
  N. Uchida, Y. Matsushita, T. Miyazaki, H. Hiura, T. Kanayama
- Organizer
  14^<th> International Symposium on Small Particles and Inorganic Clusters (ISSPIS14)
- Place of Presentation
  Valladolid, Spain
- Year and Date
  2008-09-17
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] 遷移金属で安定化したグラフェンシート状単一シリコン原子層の構造モデル2008
- Author(s)
  宮崎剛英, 内田紀行, 金山敏彦
- Organizer
  2008年日本物理学会秋季大会
- Place of Presentation
  岩手県盛岡市岩手大学
- Year and Date
  2008-09-21
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Synthesis and Characterization of Clusters Assembled Films Composed of Transition-Metal Encapsulating Si Clusters2008
- Author(s)
  N. Uchida, H. Kintou, Y. Matsushita, T. Tada, K. Kirihara, H. Oyanagi, T. Kanayama,
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  茨城県つくば市つくば国際会議場
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PLANNED-19051017
[Presentation] Synthesis and Characterization of Clusters Assembled Films Composed of Transition-Metal Encapsulating Si Clusters
- Author(s)
  Noriyuki Uchida, Hiroshi Kintou, Yusuke Matsushita, Tetsuya Tada, Kazuhiho Kirihara, Hiroyuki Oyanagi, Toshihiko Kanayama
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  Tsukuba, Ibaraki
- Data Source
  KAKENHI-PLANNED-19051017

1. TADA Tetsuya (40188248)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
2. MIYAZAKI Takehide (10212242)

# of Collaborated Projects: 2 results

# of Collaborated Products: 36 results
3. UCHIDA Noriyuki (60400636)

# of Collaborated Projects: 1 results

# of Collaborated Products: 51 results
4. 際本泰士 (50018040)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 木村薫 (30169924)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 岡田純平 (90373282)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 日浦英文

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

TOSHIHIKO Kanayama 金山 敏彦

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Advanced semiconducting devices using regulated nano-space materialsPrincipal Investigator

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四重極イオントラップの多重極化によるボロン・クラスター集合固体の創製

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新しい高機能荷電粒子トラップのプラズマ科学的基礎研究

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Synthesis of metal encapsulated Si clusters and its application to formation of interfacial nanostructuresPrincipal Investigator

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[Journal Article] Electronic properties of W-encapsulated Si cluster film on Si (100) substrates2012

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[Journal Article] Ab Initio Structure Characterization for the Amorphous Assembly of Si Clusters Encapsulating Transition Metal2011

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[Journal Article] Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters2011

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[Journal Article] New semiconducting silicides assembled from transition-metal-encapsulating Si clusters2011

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[Journal Article] First principles structure modeling for amorphous Si-rich transition metal silicides2010

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[Journal Article] First principles structure modeling for amorphous Si-rich transition metal silicides2010

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[Journal Article] Structure determination of W-capsulated Si cage clusters by x-ray absorption fine structure spectra2009

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[Journal Article] Structure determination of W-capsulated Si cage clusters by x-ray absorption fine structure spectra2009

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[Journal Article] Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2008

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[Journal Article] Electric field effect in amorphous2008

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[Journal Article] Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters2008

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[Journal Article] Local modification of electronic structure of Si(111)-7x7 surfaces by forming molybdenum-encapsulating Si clusters2007

TOSHIHIKO Kanayama 金山敏彦