KANEKO Masamitsu 金子昌充

Researcher Number	70374709
Affiliation (based on the past Project Information) *help	2012: 立命館大学, 総合理工学研究機構, ポストドクトラルフェロー 2010: Ritsumeikan University, 研究員 2010: 立命館大学, 総合理工学研究機構, ポストドクトラルフェロー 2008 – 2010: 立命館大学, 総合理工学研究機構, 研究員 2008: 立命館大学, 総合理工学・研究機構, ポスドク研究員 2005 – 2007: 北海道大学, 量子集積エレクトロニクス研究センター, 非常勤研究員
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Applied materials science/Crystal engineering / Science and Engineering / Electronic materials/Electric materials / Electron device/Electronic equipment
Keywords	Except Principal Investigator GaN / DLTS / MIS構造 / p型ドーピング / 分子線エピタキシー法 / 窒化インジウム / RF-MBE / InN / HEMT / 深い準位 … More / AlGaN / InGaN / p形ドーピング / DERI法 / 窒化インジウムガリウム / Schottky interface / surface control / carbon diffusion / deep level / AIGaN / 漏れ電流 / 酸素不純物 / 窒素空孔欠陥 / プラズマ処理 / ショットキー接合 / 表面制御 / 炭素拡散 / X線光電子分光法 / ケルビン力顕微鏡 / ショットキー電極 / オーミック電極 / KOH / ウェットエッチング / 極性 / ドライエッチング / DERI / MBE / ヘテロ構造 / Interface / Trap / in situ SiN / dipole / MIS / CV / KFM / inversion layer / trap / interface / SiN / MIS-FET / 表面酸化 / 電気化学プロセス / 表面伝導 / 表面準位 / 結晶性 / キャリア濃度 / 窒素ラジカル / オーミックコンタクト / インターミキシング / ヘテロ界面 / 分子線エピタキシー / エピタキシャル成長 / 無極性 / ナノコラム / 多重量子井戸 / 光反射率 / ラジカルビーム / RHEED / その場観察 / 分子線エビタキシー法 / Seebeck係数 / サーモパワー / ナノ構造 / 窒化物半導体 Less

超高速電子デバイス開発を見据えたInN表面改質手法の検討Principal Investigator
- Principal Investigator
  
  金子昌充
- Project Period (FY)
  2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Ritsumeikan University
Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Ritsumeikan University
Study of the interface at MIS/GaN-FET
- Principal Investigator
  
  KIKAWA Junjiro
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Ritsumeikan University
III族窒化物半導体混晶の欠陥準位・表面準位の評価と制御
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Ritsumeikan University
Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Ritsumeikan University
Reliability improvement of GaN-based devices by controlling defects and interfaces
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University

All 2012 2011 2010 2009 2008 2007 2006 Other

All Journal Article Presentation

[Journal Article] Strong Correlation Between Oxygen Donor and Near-Surface Electron Accumulation in Undoped and Mg-Doped In-Polar InN Films2012
- Author(s)
  A.Yang, Y.Yamashita, T.Yamaguchi, M.Imura, M.Kaneko, O.Sakata, Y.Nanishi, K.Kobayashi
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 3 Pages: 031002-031002
- DOI
  10.1143/apex.5.031002
- NAID
  10030510922
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004, KAKENHI-PROJECT-23560033
[Journal Article] Investigation on InN Mole Fraction Fluctuation in InGaN Films Grown by RF-MBE2011
- Author(s)
  T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(c)
  
  Volume: 8 Issue: 5 Pages: 1499-1502
- DOI
  10.1002/pssc.201001203
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09F09272, KAKENHI-PROJECT-21246004, KAKENHI-PROJECT-21760237
[Journal Article] Study of the flat band voltage shift of metal/insulator/n-GaN capacitors by annealing2010
- Author(s)
  J.Kikaw, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguch, Y.Nanishi
- Journal Title
  
  Phys.Status Solidi B
  
  Volume: 247 Pages: 1649-1652
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560341
[Journal Article] Study of the flatband voltage shift of metal/insulator/n-GaN capacitors by annealing2010
- Author(s)
  J.Kikawa, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguch, Y.Nanishi
- Journal Title
  
  Phys.Status Solidi B 246
  
  Pages: 1649-1652
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560341
[Journal Article] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods2009
- Author(s)
  J.Kikawa, Y.Horiuchi, E.Shibata, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A. Yamaguchi, Y Nanishi
- Journal Title
  
  Material researchsociety symposium proceedings 1108
  
  Pages: 157-161
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560341
[Journal Article] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods2009
- Author(s)
  J.Kikawa, Y.Horiuchi, E.Shibata, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguchi, Y Nanishi
- Journal Title
  
  Material research society symposium proceedings 1108
  
  Pages: 157-161
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560341
[Journal Article] Electrical and deep-level characterization of GaP_<1-x>N_x grown by gas-source molecular beam epitaxy2007
- Author(s)
  M.Kaneko, T.Hashizume, V.A.Odnoblyudov, C.W.Tu
- Journal Title
  
  J. Appl. Phys 101(in press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Electrical and deep-level characterization of GaP_<1-x>N_x grown by gas-source molecular beam epitaxy2007
- Author(s)
  M. Kaneko, T. Hashizume, V. A. Odnoblyudov and C. W. Tu
- Journal Title
  
  J. Appl. Phys. 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Electrical and deep-level characterization of GaP1-χNχ grown by gas-source molecular beam epitaxy2007
- Author(s)
  M.Kaneko, T.Hashizume, V.A.Odnoblyudov, C.W.Tu
- Journal Title
  
  J. Appl. Phys. 101(in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Large reduction of leakage currents in A1GaN Schottky diodes by a surface control process and its mechanism2006
- Author(s)
  J.Kotani, M.Kaneko, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol. B 24
  
  Pages: 2148-2155
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Surface control process of AlGaN for suppression of gate leakage currents in AlGaN/GaN heterostructure field effect transistor2006
- Author(s)
  T.Hashizume^*, J.Kotani, A.Basile, M.Kaneko
- Journal Title
  
  Jpn.J.Appl.Phys 45
- NAID
  10018158791
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism2006
- Author(s)
  J.Kotani, M.Kaneko, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol B 24
  
  Pages: 2148-2155
- NAID
  120000960611
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Control of leakage current in AlGaN Schottky interfaces by an ultrathin Al layer2006
- Author(s)
  M.Kaneko, T.Hashizume
- Journal Title
  
  phys. stat. sol. (c), 3
  
  Pages: 1758-1761
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Surface control process of AlGaN for suppression of gate leakage currents in AlGaN/GaN heterostructure field effect transistors2006
- Author(s)
  T.Hashizume, J.Kotani, A.Basile, M.Kaneko
- Journal Title
  
  Jpn. J. Appl. Phys. Letters 45
- NAID
  10018158791
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Control of leakage current in AlGaN Schottky interfaces by an ultrathin Al layer2006
- Author(s)
  M.Kaneko, T.Hashizume
- Journal Title
  
  phys. stat. sol. (c) 3
  
  Pages: 1758-1761
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Control of leakage current in AlGaN Schottky interfaces by an ultrathin Allayer2006
- Author(s)
  M.Kaneko, T.Hashizume
- Journal Title
  
  phys. stat. sol. (c) 3
  
  Pages: 1758-1761
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Large reduction of leakage currents in AIGaN Schottky diodes by a surfce control process and its mechanism2006
- Author(s)
  J.Kotani, M.Kaneko, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol B 24
  
  Pages: 2148-2155
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Surface control process of AlGaN for suppression of gate leakage currents in AlGaN/GaN heterostructure field effect transistors2006
- Author(s)
  T.Hashizume, J.Kotani, A.Basile, M.Kaneko
- Journal Title
  
  Jpn. J. Appl. Phys 45
- NAID
  10018158791
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Presentation] A Natural PN Junction in Mg-Doped In-Polar InN Film Directly Detected by High Resolution Angle-Resolved Hard X-Ray Photoelectron Spectroscopy2012
- Author(s)
  A.L.Yang, Y.Yamashita, T.Yamaguchi, M.Imura, M.Kaneko, O.Sakata, Y.Nanishi, K.Kobayashi
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010
- Author(s)
  T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  International Symposium on Growth of III-Nitrides 2010
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Aloys and Challenges for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.AgerIII, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] In組織揺らぎのメカニズム解明に向けたRF-MBE成長InGaNのCL測定評価2010
- Author(s)
  木村拓也、福本英太、山口智広、王科、金子昌充、武田彰史、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  タンパ(アメリカ)(基調講演)
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wang, T. Araki, M. Kaneko, E. Yoon, N. Miller, J. W. Ager III, K. M. Yu, W. Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  タンパ(アメリカ)
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 硬X線光電子分光によるInNバルク評価2010
- Author(s)
  金子昌充、山口智広、井村将隆、山下良之、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] 硬X線光電子分光によるInNバルク評価2010
- Author(s)
  金子昌充、山口智広、井村将隆、山下良之、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] In組織揺らぎのメカニズム解明に向けたRF-MBE成長InGaNのCL測定評価2010
- Author(s)
  木村拓也、福本英太、山口智広、王科、金子昌充、武田彰史、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010
- Author(s)
  T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  International Symposium on Growth of III-Nitrides 2010
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] C面、A面、M面InNの表面化学状態の解析2010
- Author(s)
  高木俊樹、金子昌充、山口智広、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] C面、A面、M面InNの表面化学状態の解析2010
- Author(s)
  高木俊樹、金子昌充、山口智広、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  第1回窒化物半導体結晶成長講演会(POSt-ISGN2)
- Place of Presentation
  東京農工大学(小金井市)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] A1薄膜堆積によるC面InNの表面改質効果2009
- Author(s)
  高木俊樹、金子昌充、山口智広、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 極性及び無極性InNの表面電位評価2009
- Author(s)
  金子昌充、川島圭介、山口智広、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Observation of Surface Potential on Polar and Nonpolar InN by Kelvin-Probe Force Microscopy2009
- Author(s)
  M.Kaneko, Y.Takagi, K.Kawashima, T.Yamaguchi, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Metal/SiN/GaN構造のアニールによるフラットバンドシフトの検討2009
- Author(s)
  城川潤二郎、堀内佑樹,柴田英次,金子昌充、大嶽浩隆,藤嶌辰也,近松健太郎,山口敦司,名西〓之
- Organizer
  秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
- Place of Presentation
  張家界(中国)
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] CV測定によるGaN-MIS構造に於けるSiN成膜条件の検討2009
- Author(s)
  城川潤二郎、堀内佑樹,柴田英次,金子昌充、大嶽浩隆,藤嶌辰也,近松健太郎,山口敦司,名西〓之
- Organizer
  春季第56回応用物理学会学術講演会
- Place of Presentation
  つくば大学、茨城
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] CV測定によるGaN-MIS構造に於けるSiN成膜条件の検討2009
- Author(s)
  城川潤二郎、堀内佑樹, 柴田英次, 金子昌充、大嶽浩隆, 藤嶌辰也, 近松健太郎, 山口敦司, 名西〓之
- Organizer
  春季第56回応用物理学会学術講演会
- Place of Presentation
  つくば大学(茨城県)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
- Place of Presentation
  張家界(中国)
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Potential and Challenges of InN and Related Alloys for Advanced Electronic Devices2009
- Author(s)
  Y.Nanishi, N.Maeda, T.Yamaguchi, M.Kaneko
- Organizer
  67th Device Research Conference
- Place of Presentation
  ペンシルバニア(アメリカ)
- Year and Date
  2009-06-23
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Evaluation of Surface Fermi Level of MBE-Grown InN by Kelvin-Probe Force Microscopy2009
- Author(s)
  金子昌充, 山口智広, 名西〓之
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Evaluation of Surface Fermi Level of MBE-Grown InN by Kelvin-Probe Force Microscopy2009
- Author(s)
  M.Kaneko, T.Yamaguchi, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Al簿膜堆積によるC面InNの表面改質効果2009
- Author(s)
  高木俊樹、金子昌充、山口智広、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] 極性及び無極性InNの表面電位評価2009
- Author(s)
  金子昌充、川島圭介、山口智広、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法を用いた高品質InN結晶成長-配列制御InNナノコラム成長について-2009
- Author(s)
  荒木努、山口智広、金子昌充、名西〓之
- Organizer
  2009年度電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  徳島大学(徳島市)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] KFMによるInN表面電位の直接評価2009
- Author(s)
  金子昌充, 山口智広, 名西〓之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] RF-MBE法を用いた高品質InN結晶成長-配列制御InNナノコラム成長について-2009
- Author(s)
  荒木努、山口智広、金子昌充、名西〓之
- Organizer
  2009年度電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  徳島大学(徳島市)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Metal/SiN/GaN構造のアニールによるフラットバンドシフトの検討2009
- Author(s)
  城川潤二郎、堀内佑樹, 柴田英次, 金子昌充、大嶽浩隆, 藤罵辰也, 近松健太郎, 山口敦司, 名西〓之
- Organizer
  秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Study of the flat bandvoltage shift in Metal/Insulator/n-GaN capacitors by annealing2009
- Author(s)
  J.Kikawa, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguchi, Y Nanishi
- Organizer
  2009 E-MRS Fall meeting
- Place of Presentation
  Warsaw,Poland
- Year and Date
  2009-09-17
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Study of the flat band voltage shift in Metal/Insulator/n-GaN capacitors by annealing2009
- Author(s)
  J.Kikawa, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguchi, Y Nanishi
- Organizer
  2009 E-MRS Fall meeting
- Place of Presentation
  Warsaw Univ.(Poland)
- Year and Date
  2009-09-17
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Observation of Surface Potential on Polar and Nonpolar InN by Kelvin-Probe Force Microscopy2009
- Author(s)
  M.Kaneko, Y.Takagi, K.Kawashima, T.Yamaguchi, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Potential and Challenges of InN and Related Alloys for Advanced Electronic Devices2009
- Author(s)
  Y.Nanishi, N.Maeda, T.Yamaguchi, M.Kaneko
- Organizer
  67th Device Research Conference
- Place of Presentation
  ペンシルバニア(アメリカ)
- Year and Date
  2009-06-23
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  第1回窒化物半導体結晶成長講演会(Post-ISGN2)
- Place of Presentation
  東京農工大学(小金井市)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Detailed investigation of GaN metal-insulator-semiconduct or structures by capacitance-voltage and deep level transient spectroscopy methods2008
- Author(s)
  城川潤二郎, 堀内佑樹, 柴田英次, 金子昌充, 大嶽浩隆,藤嶌辰也,近松健太郎, 山口敦司, 名西〓之
- Organizer
  2008 Materials Research Society Fall meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2008-12-02
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] X線光電子分光法によるMgドープInNの表面評価2008
- Author(s)
  緩利友晶紀、野田光彦、武藤大祐、山口智広、金子昌充、荒木努、名西憾之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] X線光電子分光法によるMgドープInNの表面評価2008
- Author(s)
  緩利友晶紀、野田光彦、武藤大祐、山口智広、金子昌充、荒木努、名西〓之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] GaN MIS構造のCV特性検討22008
- Author(s)
  城川潤二郎, 堀内佑樹, 柴田英次, 金子昌充, 大嶽浩隆, 藤蔦辰也, 近松健太郎, 山口敦司, 名西?之
- Organizer
  第69回秋季応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] GaN MIS構造のCV特性検討22008
- Author(s)
  城川潤二郎,堀内佑樹,柴田英次,金子昌充,大嶽浩隆,藤嶌辰也,近松健太郎,山口敦司,名西〓之
- Organizer
  第69回秋季応用物理学会学術講演会
- Place of Presentation
  愛知県中部大学、春日井市
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods2008
- Author(s)
  城川潤二郎, 堀内佑樹, 柴田英次, 金子昌充, 大嶽浩隆, 藤嶌辰也, 近松健太郎, 山口敦司, 名西?之
- Organizer
  2008 Materials Research Society Fall meeting
- Place of Presentation
  Boston, MA., U.S.A.
- Year and Date
  2008-12-02
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] 硬X線光電子分光法を用いたInNの表面電子状態評価
- Author(s)
  井村将隆, 津田俊輔, 長田貴弘, 小出康夫, Yang Anli, 山下良之, 吉川英樹, 小林啓介, 名西やすし, 山口智広, 金子昌充, 上松　尚, 荒木　努
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学城北地区/松山大学文京キャンパス、愛媛県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] R. Amiya, T. Yamaguchi, D. Tajimi, M. Hayashi, Y. Sugiura, T. Honda, T. Araki, and Y. Nanishi
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, Y. Koide, A. Yang, Y. Yamashita, H. Yoshikawa, K. Kobayashi, M. Kaneko, T. Yamaguchi, N. Uematsu, R. Iwamoto, T. Araki, and Y. Nanishi
- Organizer
  31st　Electronic Materials Symposium (EMS31)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Strong correlation between oxygen donor and nearsurface electron accumulation in non-polar mplane (10-10) InN film
- Author(s)
  A. Yang, Y. Yamashita, H Yoshikawa, T. Yamaguchi, M. Imura, M. Kaneko, O. Sakata, Y. Nanishi, and K. Kobayashi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Surface and Bulk Electronic Structure of Mgdoped　InN Analyzed by Hard X-ray Photoelectron　Spectroscopy
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, Y. Koide, A. Yang, Y. Yamashita, H. Yoshikawa, K. Kobayashi, M. Kaneko, T. Yamaguchi, N. Uematsu, T. Araki, and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004

1. YAMAGUCHI Tomohiro (50454517)

# of Collaborated Projects: 4 results

# of Collaborated Products: 37 results
2. NANISHI Yasushi (40268157)

# of Collaborated Projects: 3 results

# of Collaborated Products: 37 results
3. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 3 results

# of Collaborated Products: 23 results
4. WANG Ke (60532223)

# of Collaborated Projects: 3 results

# of Collaborated Products: 15 results
5. HYUNSEOK Na (80411239)

# of Collaborated Projects: 2 results

# of Collaborated Products: 7 results
6. SATO Taketomo (50343009)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. KIKAWA Junjiro (70469196)

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
8. NAOI Hiroyuki (10373101)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. HASHIZUME Tamotsu (80149898)

# of Collaborated Projects: 2 results

# of Collaborated Products: 12 results
10. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. KASAI Seiya (30312383)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

KANEKO Masamitsu 金子 昌充

Research Projects

Research Products

Co-Researchers

超高速電子デバイス開発を見据えたInN表面改質手法の検討Principal Investigator

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

Study of the interface at MIS/GaN-FET

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

III族窒化物半導体混晶の欠陥準位・表面準位の評価と制御

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Reliability improvement of GaN-based devices by controlling defects and interfaces

Principal Investigator

Project Period (FY)

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Research Institution

[Journal Article] Strong Correlation Between Oxygen Donor and Near-Surface Electron Accumulation in Undoped and Mg-Doped In-Polar InN Films2012

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Investigation on InN Mole Fraction Fluctuation in InGaN Films Grown by RF-MBE2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Study of the flat band voltage shift of metal/insulator/n-GaN capacitors by annealing2010

Author(s)

Journal Title

Data Source

[Journal Article] Study of the flatband voltage shift of metal/insulator/n-GaN capacitors by annealing2010

Author(s)

Journal Title

Data Source

[Journal Article] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods2009

Author(s)

Journal Title

Data Source

[Journal Article] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods2009

Author(s)

Journal Title

Data Source

[Journal Article] Electrical and deep-level characterization of GaP_<1-x>N_x grown by gas-source molecular beam epitaxy2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Electrical and deep-level characterization of GaP_<1-x>N_x grown by gas-source molecular beam epitaxy2007

Author(s)

KANEKO Masamitsu 金子昌充