Fujiwara Akira. 藤原聡

… Alternative Names

Fujiwara Akira 藤原聡

FUJIWARA Akira 藤原聡

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Researcher Number	70393759
Other IDs
Affiliation (Current)	2025: 日本電信電話株式会社NTT物性科学基礎研究所, フロンティア機能物性研究部, 上席特別研究員
Affiliation (based on the past Project Information) *help	2020 – 2023: 日本電信電話株式会社NTT物性科学基礎研究所, フロンティア機能物性研究部, 上席特別研究員 2018 – 2019: 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 上席特別研究員 2015: NTT, 物性科学基礎研究所, 上席特別研究員 2014: 日本電信電話株式会社, NTT物性科学基礎研究所量子電子物性研究部, 主幹研究員 2012: 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 主幹研究員 … More 2010: 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 主幹研究員 2007 – 2009: 日本電信電話(株), 物性科学基礎研究所, 主幹研究員 2007: NTT物性科学基礎研究所, 量子電子物性研究部, 主幹研究員 2004 – 2007: 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 主幹研究員 Less
Review Section/Research Field	Principal Investigator Broad Section D / Medium-sized Section 28:Nano/micro science and related fields Except Principal Investigator Electron device/Electronic equipment / Medium-sized Section 21:Electrical and electronic engineering and related fields / Nanostructural science / Microdevices/Nanodevices / Science and Engineering
Keywords	Principal Investigator 電気標準 / 量子ホール / 量子計測三角形 / 単電子 / ジョセフソンデバイス / 半導体ナノデバイス / 電流標準 / 量子電気標準 / ジョセフソン電圧標準 / 量子ホール抵抗標準 / 単電子電流標準 / 単電子デバイス … More Except Principal Investigator … More 電子デバイス・機器 / シリコン / 少数電子素子 / 揺らぎ許容デバイス / 先端機能デバイス / 量子ドット / エネルギー消費 / 電子電子散乱 / 電子流体 / 電子正孔２重層 / クーロンドラッグ / 金属絶縁体転移 / 電子流体効果 / MOSトランジスタ / 接合ダイオード / トランジスタ / ナノデバイス / ドーパント原子 / シングルドーパント / single-electron turnstile / acceptor / dopant / single electron / donor / 単電子ターンスタイル / アクセプタ / ドーパント / 単一電子 / ドナー / ドーパントエンジニアリング / 単一ドーパント / 少数電子デバイス / マイクロナノデバイス / 抵抗変化メモリ / 量子情報処理デバイス / フレキシブルデバイス / 省エネルギーデバイス / 抵抗変化素子 / シュタルク効果 / ELスペクトル / 不純物準位 / IV族半導体 / 谷分離効果 / ＥＬスペクトル / 第一原理計算 / ナノキャパシタ / 誘電率 / ＩＶ族半導体 / ナノ構造 / ナノ構造物性 / 集積回路 / 単電子転送 / 単電子デバイス / 低消費電力 / 単量子デバイス / フレキシブル論理ゲート / 省エネルギー Less

Research on emerging devices based on electron-hydrodynamic effects
- Principal Investigator
  
  Ono Yukinori
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Shizuoka University
単電子制御による量子標準・極限計測技術の開発Principal Investigator
- Principal Investigator
  
  藤原聡
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  NTT Basic Research Laboratories
Quantum Standards and Ultimate Precision Measurements Based on Single ElectronsPrincipal Investigator
- Principal Investigator
  
  Fujiwara Akira
- Project Period (FY)
  2018 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section D
- Research Institution
  NTT Basic Research Laboratories
Multi-input and multi-output flexible nanodot-array devices operating with multiple valued ReRAM
- Principal Investigator
  
  TAKAHASHI Yasuo
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hokkaido University
Development of dopant atom devices based on silicon nanostructures
- Principal Investigator
  
  Tabe Michiharu
- Project Period (FY)
  2011 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Shizuoka University
Control of dielectric function by making nano-scale structure of IV-group semiconductor
- Principal Investigator
  
  KAGESHIMA Hiroyuki
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanostructural science
- Research Institution
  NTT Basic Research Laboratories
シリコンナノドットを用いた論理機能選択デバイス
- Principal Investigator
  
  TAKAHASHI Yasuo
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Studies on single-electron devices and circuits based on silicon integrated circuit process
- Principal Investigator
  
  INOKAWA Hiroshi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Shizuoka University
Control of single electrons using bonor levels in silicon
- Principal Investigator
  
  ONO Yukinori
- Project Period (FY)
  2004 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  NTT Basic Research Laboratories

[Book] "Silicon Single-Electron Devices, " in Device Applications of Silicon Nanocrystals and Nanostructures Koshida, Nobuyoshi (ed.)2009
- Author(s)
  Yasuo Takahashi, Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Hiroshi Inokawa
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-19310093
[Book] "Single-Electron Transistor and its Logic Application" in Nanotechnology2008
- Author(s)
  Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Katsuhiko Nishiguchi, Akira Fujiwara
- Publisher
  Wiley-VCH
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Seebeck effect in a nanometer-scale dot in a Si nanowire observed with electron counting statistics2022
- Author(s)
  Chida Kensaku、Fujiwara Akira、Nishiguchi Katsuhiko
- Journal Title
  
  Applied Physics Letters
  
  Volume: 121 Issue: 18 Pages: 183501-183501
- DOI
  10.1063/5.0114584
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H05258
[Journal Article] Critical conductance of two-dimensional electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor2021
- Author(s)
  M. Razanoelina, M. Hori, A. Fujiwara, Y. Ono
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 10 Pages: 104003-104003
- DOI
  10.35848/1882-0786/ac25c4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K20289, KAKENHI-PROJECT-18H05258, KAKENHI-PROJECT-20H00241, KAKENHI-PROJECT-20H02203
[Journal Article] Understanding the mechanism of tunable-barrier single-electron pumping: Mechanism crossover and optimal accuracy2021
- Author(s)
  Yamahata Gento、Johnson Nathan、Fujiwara Akira
- Journal Title
  
  Physical Review B
  
  Volume: 103 Issue: 24 Pages: 245306-245306
- DOI
  10.1103/physrevb.103.245306
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H05258
[Journal Article] (Invited) Single-Electron Manipulation in an Attofarad-Capacitor DRAM2021
- Author(s)
  Nishiguchi Katsuhiko、Chida Kensaku、Fujiwara Akira
- Journal Title
  
  ECS Transactions
  
  Volume: 104 Issue: 4 Pages: 33-48
- DOI
  10.1149/10404.0033ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H05258
[Journal Article] Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility2020
- Author(s)
  P Giblin Stephen、Mykkanen Emma、Kemppinen Antti、Immonen Pekka、Manninen Antti、Jenei M、Mottonen Mikko、Yamahata Gento、Fujiwara Akira、Kataoka Masaya
- Journal Title
  
  Metrologia
  
  Volume: 57 Issue: 2 Pages: 025013-025013
- DOI
  10.1088/1681-7575/ab72e0
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Journal Article] Measurement of the curvature and height of the potential barrier for a dynamic quantum dot2019
- Author(s)
  Johnson N.、Yamahata G.、Fujiwara A.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 Issue: 16 Pages: 162103-162103
- DOI
  10.1063/1.5120585
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H05258
[Journal Article] Characteristics of Si Single-Electron Transistor under Illumination2019
- Author(s)
  Takahashi Yasuo、Sinohara Michito、Arita Masashi、Tsurumaki-Fukuchi Atsushi、Fujiwara Akira、Ono Yukinori、Nishiguchi Katsuhiko、Inokawa Hiroshi
- Journal Title
  
  ECS Transactions
  
  Volume: 92 Issue: 4 Pages: 47-56
- DOI
  10.1149/09204.0047ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04484, KAKENHI-PROJECT-18H05258
[Journal Article] Picosecond coherent electron motion in a silicon single-electron source2019
- Author(s)
  Yamahata Gento、Ryu Sungguen、Johnson Nathan、Sim H.-S.、Fujiwara Akira、Kataoka Masaya
- Journal Title
  
  Nature Nanotechnology
  
  Volume: 14 Issue: 11 Pages: 1019-1023
- DOI
  10.1038/s41565-019-0563-2
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Journal Article] Evidence for universality of tunable-barrier electron pumps2019
- Author(s)
  Giblin Stephen P、Fujiwara Akira、Yamahata Gento、Bae Myung-Ho、Kim Nam、Rossi Alessandro、Mottonen Mikko、Kataoka Masaya
- Journal Title
  
  Metrologia
  
  Volume: 56 Issue: 4 Pages: 044004-044004
- DOI
  10.1088/1681-7575/ab29a5
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Journal Article] Electron aspirator using electron-electron scattering in nanoscale silicon2018
- Author(s)
  Firdaus Himma、Watanabe Tokinobu、Hori Masahiro、Moraru Daniel、Takahashi Yasuo、Fujiwara Akira、Ono Yukinori
- Journal Title
  
  Nature Communications
  
  Volume: 9 Issue: 1 Pages: 48131-48131
- DOI
  10.1038/s41467-018-07278-8
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18H05258, KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-20K20289
[Journal Article] Detection of single holes generated by impact ionization in silicon2018
- Author(s)
  Firdaus Himma、Watanabe Tokinobu、Hori Masahiro、Moraru Daniel、Takahashi Yasuo、Fujiwara Akira、Ono Yukinori
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Issue: 16 Pages: 163103-163103
- DOI
  10.1063/1.5046865
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H05258, KAKENHI-PROJECT-15H01706, KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-20K20289
[Journal Article] Field-dependent hopping conduction2018
- Author(s)
  T.Hayashi, Y.Tokura, A.Fujiwara
- Journal Title
  
  Physica B
  
  Volume: 541 Pages: 19-23
- DOI
  10.1016/j.physb.2018.04.019
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K03479, KAKENHI-PROJECT-18H05258
[Journal Article] Spin splitting in EuO(111)/Si(111) spin-filter tunnel junctions with atomically sharp interface2018
- Author(s)
  Ohsugi Rento、Omi Hiroo、Krockenberger Yoshiharu、Fujiwara Akira
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 11 Pages: 110304-110304
- DOI
  10.7567/jjap.57.110304
- NAID
  210000149744
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H05258
[Journal Article] Coupling capacitance between double quantum dots tunable by number of electrons in Si quantum dots2015
- Author(s)
  Takafumi Uchida1, Masashi Arita, Akira Fujiwara, and Yasuo Takahashi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 117 Issue: 8
- DOI
  10.1063/1.4913393
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360128, KAKENHI-PROJECT-26630141
[Journal Article] Single-electron thermal noise2014
- Author(s)
  K. Nishiguchi, Y. Ono, A. Fujiwara
- Journal Title
  
  Nanotechnology
  
  Volume: 25 Issue: 27 Pages: 275201-275201
- DOI
  10.1088/0957-4484/25/27/275201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360128
[Journal Article] Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting2013
- Author(s)
  Y. Niida, K. Takashina, Y. Ono, A. Fujiwara, Y. Hirayama
- Journal Title
  
  Appllied Physics Letters
  
  Volume: 102 Issue: 19
- DOI
  10.1063/1.4803014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360128, KAKENHI-PROJECT-25289098, KAKENHI-PROJECT-25600015
[Journal Article] Double-quantum-dot Si single-electron transistor with multiple gate electrodes fabricated by PADOX2013
- Author(s)
  Takafumi Uchida, Masashi Arita, Akira Fujiwara, and Yasuo Takahashi
- Journal Title
  
  Proceedings of the 2013 World Congress on Advances in Nano, Biomechanics, Robotics, and Energy Research
  
  Volume: ISBN 978-89-89693-36-9-93420 Pages: 498-503
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360128
[Journal Article] High-speed operation of Si single-electron transistor2013
- Author(s)
  Y. Takahashi, H . Takenaka, T. Uchida, M. Arita, A. Fujiwara, and H. Inokaw
- Journal Title
  
  ECS Transactions
  
  Volume: 58 Issue: 9 Pages: 73-80
- DOI
  10.1149/05809.0073ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240022, KAKENHI-PROJECT-24360128, KAKENHI-PROJECT-25420279
[Journal Article] First-principles study of silicon-based nanocapacitors2012
- Author(s)
  H. Kageshima and A. Fujiwara
- Journal Title
  
  Phys. Rev. B
  
  Volume: Vol. 85 Issue: 20
- DOI
  10.1103/physrevb.85.205304
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310062
[Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: Vol. 98 Issue: 11
- DOI
  10.1063/1.3360224
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310062
[Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310062
[Journal Article] Effective Dielectric Constant of Si-nanofilm Channel in the Full Inversion Regime under Field Effect due to Symmetric Double Gat2011
- Author(s)
  H. Kageshima and A. Fujiwara
- Journal Title
  
  AIP Conference Proceedings
  
  Volume: Vol. 1399 Pages: 197-198
- DOI
  10.1063/1.3666323
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310062
[Journal Article] Fabrication of double-dot single-electron transistor in silicon nanowire2010
- Author(s)
  Mingyu Jo, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Jung-Bum Choi, Yasuo Takahashi
- Journal Title
  
  Thin Solid Films Vol.518
- NAID
  110007360126
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs2009
- Author(s)
  Kaizawa Takuya, Jo Mingyu, Arita Masashi, Fujiwara Akira, Yamazaki Kenji, Ono Yukinori, Inokawa Hiroshi, Takahashi Yasuo, Choi Jung-Bum
- Journal Title
  
  International Journal of Nanotechnology and Molecular Computation Vol.1
  
  Pages: 58-69
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Single-Electron Device With Si Nanodot Array and Multiple Input Gates2009
- Author(s)
  Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung-Bum Choi
- Journal Title
  
  IEEE Trans. Nanotechnol Vol.8
  
  Pages: 535-541
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature2009
- Author(s)
  K Nishiguchi, A Fujiwara
- Journal Title
  
  Nanotechnology Vol.20
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor2008
- Author(s)
  A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett 92
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors2008
- Author(s)
  K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi
- Journal Title
  
  Appl. Phys. Lett Vol.92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Silicon Single-Charge Transfer Devices2008
- Author(s)
  小野, 藤原, 西口, 高橋, 猪川
- Journal Title
  
  Journal of Physics and Chemistry of Solid 69
  
  Pages: 702-707
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metaloxide-semiconductor field-effect transistor2008
- Author(s)
  Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara
- Journal Title
  
  Appl. Phys. Lett Vol.93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Silicon single-charge transfer devices2008
- Author(s)
  Y. Ono, A. Fujiwara, K. Nishiguchi, Y. Takahashi, and H. Inokawa
- Journal Title
  
  J. Phys. Chem. Solids 69
  
  Pages: 702-707
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Silicon singlecharge transfer devices2008
- Author(s)
  Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Yasuo Takahashi, Hiroshi Inokawa
- Journal Title
  
  J. Phys. Chem. Solid Vol.69
  
  Pages: 702-707
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Stochastic data processing circuit based on single electrons using nano field-effect transistors2008
- Author(s)
  西口, 小野, 藤原, 猪川, 高橋
- Journal Title
  
  Applied Physics Letters 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Pauli-spin-blockade transport through a silicon double quantum dot2008
- Author(s)
  H.W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, Y. Hirayama
- Journal Title
  
  Phys. Rev. B Vol.77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor2008
- Author(s)
  Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
- Journal Title
  
  Appl. Phys. Lett Vol.92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Single-Electron-Resolution Electrometer Based on Field-Effect Transistor2008
- Author(s)
  Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi
- Journal Title
  
  Jpn. J. Appl. Phys Vol.47
  
  Pages: 8305-8310
- NAID
  40016346937
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Pauli-spin-blockade transport through a silicon double quantum dot2008
- Author(s)
  H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama
- Journal Title
  
  Phys. Rev. B 77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor2008
- Author(s)
  A. Fujiwara, K. Nishiguchi, and Y. Ono
- Journal Title
  
  Appl. Phys. Lett. 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones2008
- Author(s)
  Neil M. Zimmerman, William H. Huber, Brian Simonds, Emmanouel Hourdakis, Akira Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa, Miha Furlan, Mark W. Keller
- Journal Title
  
  J. Appl. Phys Vol.104
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Stochastic data processing circuit based on single electrons using nano field-effect transistors2008
- Author(s)
  K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi
- Journal Title
  
  Appl. Phys. Lett. 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] A gate-defined silicon quantum dot molecule2008
- Author(s)
  Hongwu Liu, Toshimasa Fujisawa, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, Yoshiro Hirayama
- Journal Title
  
  Appl. Phys. Lett Vol.92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor2008
- Author(s)
  Akira Fujiwara
- Journal Title
  
  Appl.Phys.Lett. 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor2008
- Author(s)
  A.Fujiwara
- Journal Title
  
  Appl.Phys.Lett. 92
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Direct Measurement of Capacitance Parameters in Nanometer-Scale MOSFETs2008
- Author(s)
  Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono, Hiroaki Satoh
- Journal Title
  
  IEEJ Trans. EIS Vol.128
  
  Pages: 905-911
- NAID
  10021132673
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Transfer and Detection of Single Electron using Metal-Oxide-Semiconductor Field-Effect-Transistor2007
- Author(s)
  W.C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N.J. Wu
- Journal Title
  
  IEICE Trans. Electron Vol.E90C
  
  Pages: 943-948
- NAID
  110007519656
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Charge Offset Stability in Tunable-Barrier Si SET Devices2007
- Author(s)
  N. M. Zimmerman, B. J. Simonds, 藤原, 小野, 高橋, 猪川
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Anomalous Resistance Ridges along Filling Factor υ=4i: Evidence for a New Type of Many-body Effect2007
- Author(s)
  高品, M. Brun, 大田, D.K. Maude, 藤原, 小野, 高橋, 平山
- Journal Title
  
  Physical Review Letters 99
  
  Pages: 249-266
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Infrared detection with silicon nano field-effect transistor2007
- Author(s)
  K. Nishiguch, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi
- Journal Title
  
  Appl. Phys. Lett. 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Transfer and detection of single electrons using metal-oxide-semiconductor field-effect-transistors2007
- Author(s)
  W. C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J. Wu
- Journal Title
  
  IEICE Trans. Electron. E-90C
  
  Pages: 943-948
- NAID
  110007519656
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Infrared detection with silicon nano transistors2007
- Author(s)
  西口, 小野, 藤原, 山口, 猪川, 高橋
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Identification of single and coupled acceptors in silicon nano field-effect transistors2007
- Author(s)
  M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett. 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Conductance modulation by individual acceptors in Si nano-scale field-effect transistors2007
- Author(s)
  小野, 西口, 藤原, 山口, 猪川, 高橋
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Anomalous resistance ridges along filling factor v=4i2007
- Author(s)
  K. Takashima, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, Y. Takahashi, and Y. Hirayama
- Journal Title
  
  Phys. Rev. Letts. 99
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors2007
- Author(s)
  W.C. Zhang, 西口, 小野, 藤原, 山口, 猪川, 高橋, N.J. Wu
- Journal Title
  
  IEICE Transactions of Electron E90-C
  
  Pages: 943-948
- NAID
  110007519656
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Manipulation and detection of single electrons for future information processing2005
- Author(s)
  Y.Ono, A.Fujiwara, K.Nishiguchi, H.Inokawa, Y.Takahashi
- Journal Title
  
  Applied Physics Letters Vol.97, No.3
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Single-electron tunneling transistor with tunable barriers using silicon nanowire Metal-oxide-semiconductor field-effect transistor2005
- Author(s)
  Akira Fujiwara
- Journal Title
  
  Applied Physics Letters Vol.88,No.5
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Single-electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor2005
- Author(s)
  Akira Fujiwara
- Journal Title
  
  Applied Physics Letters Vol.88,No.5
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Single-electron tunneling transistor with tunable barriers using silicon nanowire Metal-oxide-semiconductor field-effect transistor2005
- Author(s)
  Akira Fujiwara
- Journal Title
  
  Applied Physics Letters Vol.88, No.5
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Multilevel memory using an electrically formed single-electron box2004
- Author(s)
  K.Nishiguchi, H.Inokawa, Y.Ono, A.Fujiwara, Y.Takahashi
- Journal Title
  
  Applied Physics Letters Vol.85, No.7
  
  Pages: 1277-1279
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices2004
- Author(s)
  N.M.Zimmerman, E.Hourdakis, Y.Ono, A.Fujiwara, Y.Takahashi
- Journal Title
  
  Journal of Applied Physics Vol.96, No.9
  
  Pages: 5254-5266
- Data Source
  KAKENHI-PROJECT-16206038
[Patent] 抵抗変化型メモリ2012
- Inventor(s)
  高橋庸夫、有田正志、藤井孝史、梶宏道、近藤洋史、茂庭昌弘、藤原一郎、山口豪、吉丸正樹
- Industrial Property Rights Holder
  (株)半導体理工学研究センター
- Industrial Property Number
  2012-256096
- Filing Date
  2012-11-22
- Data Source
  KAKENHI-PROJECT-24360128
[Patent] 半導体発光素子2011
- Inventor(s)
  登坂仁一郎、西口克彦、小野行徳、影島博之、藤原聡
- Industrial Property Rights Holder
  登坂仁一郎、西口克彦、小野行徳、影島博之、藤原聡
- Industrial Property Number
  2011-051146
- Filing Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-22310062
[Patent] 半導体発光素子2011
- Inventor(s)
  登坂仁一郎, 西口克彦, 小野行徳, 影島博之, 藤原聡
- Industrial Property Rights Holder
  登坂仁一郎, 西口克彦, 小野行徳, 影島博之, 藤原聡
- Industrial Property Number
  2011-051146
- Filing Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Drag of Electron-Hole Bilayer in Silicon-on-Insulator at Low Temperature2023
- Author(s)
  Ahmed Nabil, Manjakavahoaka Razanoelina, Masahiro Hori, Akira Fujiwara, Yukinori Ono
- Organizer
  Silicon Nanoelectronics Workshop 2023 (SNW 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00241
[Presentation] シリコン２重単電子ポンプにおける単電子クーロン衝突2023
- Author(s)
  山端元音、Nathan Johnson、藤原聡
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Electron dynamics in a silicon quantum-dot single-electron pump2022
- Author(s)
  A. Fujiwara, G. Yamahata, and N. Johnson
- Organizer
  東大LIMMSトピカルセミナー
- Invited
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Ultimate electronics using silicon single-eletron devices2022
- Author(s)
  A. Fujiwara, G. Yamahata, N. Johnson, C. Kensaku, and K. Nishiguchi
- Organizer
  韓国標準研KRISSセミナー
- Invited
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Device simulator for optimal design of silicon single-electron pumps2022
- Author(s)
  A. Fujiwara, G. Yamahata, N. Johnson
- Organizer
  Conference on Precision Electromagnetic Measurements (CPEM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Electron manipulation using a silicon dynamic quantum dot2022
- Author(s)
  [A. Fujiwara, G. Yamahata, N. Johnson,
- Organizer
  Workshop for the single-electron quantum technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Progress of silicon single-electron pumps towards quantum current standards2021
- Author(s)
  M. Kataoka, S. P. Giblin, G. Yamahata, and A. Fujiwara
- Organizer
  Institute of Physics (IOP) Silicon Quantum Information Processing Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Fast electron dynamics in a silicon dynamic quantum dot2021
- Author(s)
  A. Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim, and M. Kataoka
- Organizer
  The International Workshop on Computational Nanotechnology (IWCN)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Electron dynamics and device simulation of silicon single-electron pumps2021
- Author(s)
  A.Fujiwara, G. Yamahata, N. Johnson
- Organizer
  Single-Electron Quantum Optics for Metrology Workshop (SEQUOIA Meeting)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Observation of Seebeck Effect in a Silicon Electron Box by Electron Counting Statistics2021
- Author(s)
  K. Chida A. Fujiwara, and K. Nishiguchi
- Organizer
  International Symposium on Novel maTerials and quantum Technologies (ISNTT2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] 単電子計数統計を用いたナノメートルスケールSi MOSFET中の熱電効果の観測2021
- Author(s)
  知田健作, 藤原聡，西口克彦
- Organizer
  第68回応用物理学会春季学術講演会，オンライン開催, 2021年3月
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Electron Counting Statistics for Observation of Thermoelectric Effect in a Si Electron Box2021
- Author(s)
  K. Chida, A. Fujiwara, and K. Nishiguchi
- Organizer
  20th International Conference on Modulated Semiconductor Structures (MSS-20)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] 動的量子ドットを利用した単電子転送の精度最適点2021
- Author(s)
  山端元音, Nathan Johnson, 藤原聡
- Organizer
  第68回応用物理学会春季学術講演会オンライン開催, 2021年3月
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Optimal accuracy of single-electron pumping using a dynamic quantum dot2021
- Author(s)
  G. Yamahata, N. Johnson, and A. Fujiwara
- Organizer
  International Symposium on Novel maTerials and quantum Technologies (ISNTT2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] ナノスケール・シリコンにおける電子・電子散乱を利用したエレクトロン・アスピレーター2021
- Author(s)
  小野行徳,フィルダウスヒンマ, 渡邉時暢, 堀匡寛, モラルダニエル, 高橋庸夫, 藤原聡
- Organizer
  第81回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00241
[Presentation] Observation of single particle heat transport and cooling in a dynamic quantum dot2021
- Author(s)
  N. Johnson, V. Kashcheyevs, A. Akmentins , G. Yamahata, and A. Fujiwara
- Organizer
  Quantum Dot Day 2021 (Virtual Conference , Mar. 29, 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Single-electron manipulation in a attofarad-capacitor DRAM2021
- Author(s)
  K. Nishiguchi, K. Chida, and A. Fujiwara
- Organizer
  The 240th Electrochemical Society (ECS) Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Control of thermal noise originating from single-electron Brownian motion2020
- Author(s)
  K .Nishiguchi, K. Chida, and A. Fujiwara
- Organizer
  The 6th International Symposium toward the Future of Advanced Researches in Shizuoka University (ISFAR-SU 2020）
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Nanometer-scale temperature measurement based on single-electron counting statistics in a nanowire Si MOSFET2020
- Author(s)
  K. Chida, A. Fujiwara, and K. Nishiguchi
- Organizer
  29th International Microprocesses and Nanotechnology Conference (MNC 2020), Osaka, Japan (Nov. 9-12, 2020, held as a virtual conference)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Toward a practical quantum current standard2020
- Author(s)
  A. Kemppinen, E. Mykkanen, J. Lehtinen, A. Ronzani, A. Bera, K. Kohopaa, J. Govenius, P. Immonen, A. Manninen, M. Prunnila, S. Giblin, M. Kataoka, S. de Graaf, T. Hoenigl-Decrinis, R. Shaikhaidarov, G. Yamahata, A. Fujiwara, M. Jenei, and, M. Mottonen,
- Organizer
  QTech2020 (Barcelona, Apr. 6-8, 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] シリコン単電子デバイスを用いた極限エレクトロニス2020
- Author(s)
  藤原聡
- Organizer
  2020年第3回IEEE東京支部講演会 (2020年8月28日、IEEE 東京支部、オンライン)
- Invited
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Directly Comparing the Current from Two Electron Pumps2020
- Author(s)
  S. P. Giblin, G. Yamahata, A. Fujiwara, P. See, J. P. Griffiths, G. A. C. Jones, I Farrer, D. A. Ritchie, and M. Kataoka
- Organizer
  2020 Conference on Precision Electromagnetic Measurements (CPEM 2020) (Denver, August 24-28, 2020, held as a virtual conference)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Fast electron dynamics in a silicon dynamic quantum dot2020
- Author(s)
  A. Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim, and M. Kataoka
- Organizer
  Int. Workshop on Cool Electrons in Flatlands (CEF2020) (June 15-24, 2020, Catania, Italy, held as a virtual workshop)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Oxide driven spin filtering on silicon2019
- Author(s)
  R. Ohsugi, H. Omi1, Y. Krockenberger, and A. Fujiwara
- Organizer
  28th International Microprocesses and Nanotechnology Conference (MNC 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Si-nanowire-FET sensor detecting high-frequency oscillation of a multilayer-graphene MEMS by means of reflectometry technique2019
- Author(s)
  K. Nishiguchi and A. Fujiwara
- Organizer
  28th International Microprocesses and Nanotechnology Conference (MNC 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Si electron nano-aspirator en-route for energy-efficient hydro-electronic devices2019
- Author(s)
  M. Razanoelina, H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahash, A. Fujiwara, and. Y. Ono
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] バリアブル・レンジ・ホッピング伝導による低周波キャパシタンス2019
- Author(s)
  林稔晶、都倉康弘、藤原聡
- Organizer
  日本物理学会第74回年次大会
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Full Counting Statistics of Single-electron Transport in Redox-labeled DNA Motors2019
- Author(s)
  I. Madrid, C. Gerbelot, T. Yamaguchi, T. Fujii, A. Fujiwara and N. Clement
- Organizer
  International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] 粗視化分子動力学シミュレーションによるブロック共重合体ラメラ相のグラフォエピタキシ2019
- Author(s)
  山口徹、田中弘隆、藤原聡
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Si electron nano-aspirator towards emerging hydro-electronics2019
- Author(s)
  M. Razanoelina, H. Firdaus, Y. Takahashi, A. Fujiwara, and Y. Ono
- Organizer
  2019 Silicon Nanoelectronics Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Tunneling properties of EuO/Si spin filter junctions2019
- Author(s)
  R. Ohsugi, H. Omi, Y. Krockenberger, and A. Fujiwara
- Organizer
  International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Silicon nanodevices for metrology and sensor applications2019
- Author(s)
  A. Fujiwara
- Organizer
  IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] 原子層レベルで平滑な界面を有するEuO(111)/Si(111)スピンフィルター構造のスピン分裂2019
- Author(s)
  大杉廉人、尾身博雄、クロッケンバーガーヨシハル、藤原聡
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Voltage statistics of variable-range hopping transport2019
- Author(s)
  T. Hayashi, Y. Tokura, and A. Fujiwara
- Organizer
  International Conference on Statistical Physics (StatPhys27)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Observation of cooling in a dynamic quantum dot2019
- Author(s)
  N. Johnson, G. Yamahata, and A. Fujiwara
- Organizer
  International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Q-Biol: A Quantum Bioelectrochemical Software Based on Single-electron Counting2019
- Author(s)
  C. Gerbelot, I. Madrid, F. Cleri, T. Yamaguchi, H. Tanaka, C. Demaille, T. Fujii, A. Fujiwara and N. Clement
- Organizer
  International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] シリコン単電子源におけるピコ秒電子ダイナミクス2019
- Author(s)
  山端元音, Sungguen Ryu, Nathan Johnson, H. -S. Sim, 藤原　聡, 片岡　真哉
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Effective time-resolved detection of picosecond coherent dynamics in a Si dynamic quantum dot2019
- Author(s)
  G. Yamahata, S. Ryu, N. Johnson, H-S. Sim, A. Fujiwara, and M. Kataoka
- Organizer
  The International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Characteristics of Si Single-Electron Transistor under Illumination2019
- Author(s)
  Y. Takahashi, M. Shinohara, M. Arita, A. Tsurumaki-Fukuchi, A. Fujiwara, Y. Ono, K. Nishiguchi, and H. Inokawa,
- Organizer
  The 236th Electrochemical Society (ECS) Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Low-frequency capacitance of hopping transport materials2018
- Author(s)
  T. Hayashi, L. C. Duy, H. Murata, Y. Tokura, and A. Fujiwara
- Organizer
  34th International Conference on the Physics of Semiconductors (ICPS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Ultimate electronics with silicon nanowire MOSFETs2018
- Author(s)
  A. Fujiwara
- Organizer
  Workshop on Innovative Nanoscale Devices and Systems (WINDS)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Coherent oscillations of charge states in a Si single-electron pump2018
- Author(s)
  G. Yamahata, M. Kataoka, S. Ryu, H.-S. Sim, N. Johnson, and A. Fujiwara, Coherent oscillations of charge states in a Si single-electron pump
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Full Counting Statistics of Single Electron Transport in a Biological Motor2018
- Author(s)
  C. Gerbelot, T. Yamaguchi, H. Tanaka, A. Fujiwara and N. Clement
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Tunable-barrier electron pump for quantum current standards and information-to-energy converters2018
- Author(s)
  A. Fujiwara, G. Yamahata, K. Chida, and K. Nishiguchi
- Organizer
  China-Japan International Workshop on Quantum Technologies (QTech2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Study of quantisation accuracy breakdown due to high temperature and high frequency in a silicon single-electron pump2018
- Author(s)
  N. Johnson, G. Yamahata, and A. Fujiwara
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Nanodot-molecule junctions : assessing intermolecular interactions and electron transport at microwave frequencies with C-AFM and iSMM2018
- Author(s)
  J. Trasobares, J. Rech, T. Jonckheere, T. Martin, O. Aleveque, E. Levillain, V. Diez-Cabanes, Y. Olivier, J. Cornil, J.P. Nys, R. Sivakumarasamy, K. Smaali,P. Leclere, A. Fujiwara, D.Theron, D. Vuillaume and N. Clement
- Organizer
  MRS Spring meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Estimation of π-π intermolecular interactions from C-AFM on sub-10 nm Au nanodot-molecule junctions2018
- Author(s)
  J. Trasobares, J. Rech, T. Jonckheere, T. Martin, O. Aleveque, E. Levillain, V. Diez-Cabanes, Y. Olivier, J. Cornil, J.P. Nys, R. Sivakumarasamy, K. Smaali, P. Leclere, A. Fujiwara, D. Theron, D. Vuillaume, and N. Clement
- Organizer
  EMRS Spring meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] Power generator driven by Maxwell’s demon: Information-powered current in silicon single-electron devices2018
- Author(s)
  K. Chida, K. Nishiguchi, and A. Fujiwara
- Organizer
  The International Symposium for Materials Scientists “Inspiration for Innovation by Interaction
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H05258
[Presentation] マルチゲート二重量子ドットSi単電子トランジスタのカップリング容量の制御2014
- Author(s)
  内田貴史、吉岡勇、佐藤光、有田正志、藤原聡、高橋庸夫
- Organizer
  春季応用物理学会
- Place of Presentation
  青山学院大学相模原キャンパス、相模原市
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Electron pump by a single atom -Towards ultimate control of electronic charges-2014
- Author(s)
  Y. Ono, G. P. Lansbergen, M. Hori, A. Fujiwara
- Organizer
  2014 International Workshop on Advanced Nanovision Science
- Place of Presentation
  静岡大学　浜松キャンパス、浜松
- Invited
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] 3端子ナノドットアレイの高機能の創出2014
- Author(s)
  吉岡勇、内田貴史、佐藤光、有田正志、藤原聡、高橋庸夫
- Organizer
  春季応用物理学会
- Place of Presentation
  青山学院大学相模原キャンパス、相模原市
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Excited states of double-gate Si single-electron transistors in the few electron regime2013
- Author(s)
  Isamu Yoshioka, Takafumi Uchida, Masashi Arita, Akira Fujiwara, and Yasuo Takahashi
- Organizer
  2013 Silicon Nanoelectronics Workshop
- Place of Presentation
  Rihga Royal Hotel Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Double-dot Si single-electron transistor with tunable coupling capacitance2013
- Author(s)
  Takafumi Uchida, Masashi Arita, Akira Fujiwara, Yasuo Takahashi, and Seiji Samukawa
- Organizer
  Tenth International Conference on Flow Dynamics
- Place of Presentation
  Sendai International Center, Japan
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] High-speed operation of Si single-electron transistor2013
- Author(s)
  Yasuo Takahashi, Hiroto Takenaka, Takafumi Uchida, Masashi Arita, Akira Fujiwara, and Hiroshi Inokawa
- Organizer
  224th Electrochemical Society Meeting
- Place of Presentation
  The Hilton San Francisco Hotel, CA, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Double-quantum-dot Si single-electron transistor with multiple gate electrodes fabricated by PADOX2013
- Author(s)
  Takafumi Uchida, Masashi Arita, Akira Fujiwara, and Yasuo Takahashi
- Organizer
  The 2013 World Congress on Advances in Nano, Biomechanics, Robotics, and Energy Research
- Place of Presentation
  COEX, Seoul, Korea
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] 二重量子ドットSi単電子トランジスタにおける少数電子系の結合容量の評価2013
- Author(s)
  内田貴史、吉岡勇、有田正志、藤原聡、高橋庸夫
- Organizer
  秋季応用物理学会
- Place of Presentation
  同志社大学京田辺キャンパス、京田辺市
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] ダブルゲートSi単電子トランジスタにおけるexcited stateの特性変化2013
- Author(s)
  吉岡勇、内田貴史, 佐藤光，有田正志, 藤原聡, 高橋庸夫
- Organizer
  秋季応用物理学会
- Place of Presentation
  同志社大学京田辺キャンパス、京田辺市
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Double-dot Si single-electron transistor with tunable coupling capacitive by the number of electrons in the dot2013
- Author(s)
  Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita, Akira Fujiwara, and Yasuo Takahashi
- Organizer
  2013 Silicon Nanoelectronics Workshop
- Place of Presentation
  Rihga Royal Hotel Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] シリコンMOSFET における巨大谷分離を用いたフォノンレス発光の増強2013
- Author(s)
  登坂仁一郎、西口克彦、藤原聡
- Organizer
  2013 年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(厚木市)
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] ESR study of arsenic in silicon in low ion-implantation-dose regime2013
- Author(s)
  M. Hori, H. Tanaka, A. Fujiwara, Y. Ono
- Organizer
  The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Place of Presentation
  Ishikawa Ongakudo、金沢
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] シリコン量子井戸におけるトンネル電流注入発光2012
- Author(s)
  登坂仁一郎、西口克彦、影島博之、藤原聡
- Organizer
  電子情報通信学会ED-SDM 研究会「機能ナノデバイス及び関連技術」
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2012-02-07
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Electroluminescence study of phosphorous ionization in silicon-on- insulator metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara
- Organizer
  The International Symposium on Nanoscale Transport and Technology
- Place of Presentation
  NTT 厚木研究開発センタ(厚木市)
- Year and Date
  2011-01-11
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Electroluminescence study of phosphorous ionization in silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara
- Organizer
  The International Symposium on Nanoscale Transport and Technology(ISNTT2011)
- Place of Presentation
  厚木市
- Year and Date
  2011-01-11
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Effective dielectric constant of Si-nanofilm channel in the full inversion regime under field effect due to symmetric double gate2010
- Author(s)
  H. Kageshima and A. Fujiwara
- Organizer
  30th International Conference on the Physics of Semiconductors
- Place of Presentation
  COEX(韓国、ソウル)
- Year and Date
  2010-07-26
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Effective dielectric constant of Si-nanofilm channel in the full inversion regime under field effect due to symmetric double gate2010
- Author(s)
  Hiroyuki Kageshima, Akira Fujiwara
- Organizer
  30th International Conference on the Physics of Semiconductors(ICPS2010)
- Place of Presentation
  Seoul, Korea
- Year and Date
  2010-07-26
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 薄層SOI-MOSFET の電流注入発光における巨大Stark 効果2010
- Author(s)
  登坂仁一郎、西口克彦、小野行徳、影島博之、藤原聡
- Organizer
  2010 年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 薄層SOI-MOSFETの電流注入発光における巨大Stark効果2010
- Author(s)
  登坂仁一郎, 西口克彦, 小野行徳, 影島博之, 藤原聡
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Strong Stark effect of electroluminescence in thin SOI MOSFETs2010
- Author(s)
  Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京都
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Strong Stark effect of electroluminescence in thin SOI MOSFETs2010
- Author(s)
  J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  東京大学(東京都)
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Fabrication of triple-dot single-electron transistor and its single-electron- transfer operation2009
- Author(s)
  M. Jo, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J. -B. Choi
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology
- Place of Presentation
  Kaanapali, Hawaii
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Single-Dopant Effect in Si MOSFETs2008
- Author(s)
  Y. Ono, M.A.H. Khalafalla, A. Fujiwara, K. Nishiguchi, K. Takashina, S. Horiguchi, Y. Takahashi, H. Inokawa
- Organizer
  The IEEE Nanotechnology Materials and Devices Conference
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] シリコンナノドットを用いた論理機能選択デバイス2008
- Author(s)
  高橋、有田、藤原、西口、開澤
- Organizer
  特定領域研究「ポストスケール」第2回成果報告会
- Place of Presentation
  秋葉原コンベンションホール
- Data Source
  KAKENHI-PROJECT-19026001
[Presentation] Escape dynamics of electrons in a single-electron ratchet using silicon nanowire MOSFETs2008
- Author(s)
  Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara
- Organizer
  The IEEE Nanotechnology Materials and Devices Conference
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Multi functional Single-electron device using Si nanodot array and multi-input gates, Collected Papers p.00 (,@Sapporo)2008
- Author(s)
  開澤, 有田, 藤原, 山崎, 小野, 猪川, 高橋
- Organizer
  2008 International Symposium on Global COE Program of Center for Next-Generation Information Technology based on Knowledge Discovery and Knowledge Federation (GCOE-NGIT 2008, Hokkaido University)
- Place of Presentation
  北海道大学
- Data Source
  KAKENHI-PROJECT-19026001
[Presentation] Siナノドットアレイを用いた2出力単電子デバイスの半加算器動作2008
- Author(s)
  開澤、胄、有田、藤原, 山崎, 小野, 猪川, 高橋
- Organizer
  電子情報通信学会技術報告電子デバイス研究会
- Place of Presentation
  北海道大学
- Data Source
  KAKENHI-PROJECT-19026001
[Presentation] Single-electron device using Si nanodot array and multi-input gates2007
- Author(s)
  開澤, 有田, 藤原, 山崎, 小野, 猪川, 高橋, Jung-Bum Choi
- Organizer
  2007 Silicon Nanoelectronics Workshop (SNW-07)
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-19026001
[Presentation] Charge transport in boron-doped nano MOSFETs : Towards single-dopant electronics2007
- Author(s)
  Y. One, M. Khalafalla, K. Nishiguchi, K. Takashina, and A. Fujiwara
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] A Simple Test Structure for Extracting Capacitances in Nanometer-Scale MOSFETs2007
- Author(s)
  H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, H. Satoh
- Organizer
  The 6th International Conference on Global Research and Education
- Place of Presentation
  Hamamatsu
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] New functional single-electron devices using nanodot array and multiple input gates2007
- Author(s)
  Y. Takahashi, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, and H. Inokawa
- Organizer
  3rd International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Room-temperatureoperating single-electron devices using silicon nanowire MOSFET2007
- Author(s)
  Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi
- Organizer
  2007 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Novel-Functional Single-Electron Device Using Nanodot Array and Multiple Input Gates2007
- Author(s)
  高橋, 開澤, 有田, 藤原, 山崎, 小野, 猪川
- Organizer
  Third International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-19026001
[Presentation] Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs2007
- Author(s)
  A. Fujiwara
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukada
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs2007
- Author(s)
  A.Fujiwara
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs2007
- Author(s)
  Akira Fujiwara
- Organizer
  Int.Conf.Solid State Devices and Materials (SSDM)
- Place of Presentation
  Tsukuba,Japan
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs2007
- Author(s)
  Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
- Organizer
  2007 Int. Conf. Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics2007
- Author(s)
  小野, M.A.H. Khalafalla, 西口, 高品, 藤原, 堀口, 猪川, 高橋
- Organizer
  The Fifth International Symposium on Control of Semiconductor Interface
- Place of Presentation
  首都大学東京(八王子)
- Data Source
  KAKENHI-PROJECT-19026001
[Presentation] A simple test structure for extracting capacitances in nanometer-scale MOSFETs2007
- Author(s)
  H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, and H. Satoh
- Organizer
  The 6-th annual International Conference on Global Research and Education
- Place of Presentation
  Inter-Academia, Hamamatsu
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Single-electron ratchet using silicon nanowie MOSFET2007
- Author(s)
  A. Fujiwara
- Organizer
  International Conference on Electronic Properties of Two-dimensional System and Modulated Semiconductor Structures
- Place of Presentation
  Genova Magazzini del Cotone, Italy
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Single-electron ratchet using silicon nanowie MOSFET2007
- Author(s)
  A.Fujiwara
- Organizer
  International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures
- Place of Presentation
  Genova Magazzini del Cot one,Italy
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors2007
- Author(s)
  Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
- Organizer
  2007 Int. Conf. Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Dopant-mediated charge transport in boron-doped nano MOSFETs2007
- Author(s)
  小野, M. Khalafalla, 西口, 高品, 山口, 藤原, 堀口, 猪川, 高橋
- Organizer
  2007 Silicon Nanoelectronics Workshop (SNW-07)
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-19026001
[Presentation] Single-electron ratchet using silicon nanowie MOSFET2007
- Author(s)
  A. Fujiwara, K. Nishiguchi, and Y. Ono
- Organizer
  International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures
- Place of Presentation
  Genova Magazzini del Cotone, Italy
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Gate-voltage tunable coupling capacitance of Si double-quantum-dots with multiple gates
- Author(s)
  Takafumi Uchida, Masashi Arita, Akira Fujiwara, Seiji Samukawa, and Yasuo Takahashi:
- Organizer
  Eleventh International Conference on Flow Dynamics (ICFD 2014)
- Place of Presentation
  Sendai International Center, Sendai
- Year and Date
  2014-10-08 – 2014-10-10
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Highly functional three-teminal nanodot array device with almost independent input gates
- Author(s)
  Isamu Yoshioka, Takafumi Uchida, Masashi Arita, Akira Fujiwara, and Yasuo Takahashi
- Organizer
  2014 Silicon Nanoelectronics Workshop (SNW-2014)
- Place of Presentation
  Hilton Hawaian Village, Honolulu, Hawaii
- Year and Date
  2014-06-08 – 2014-06-09
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] High-frequency operation of Si single-electron transistor beyond cutoff by the use of rectifying effect
- Author(s)
  Yasuo Takahashi, Hiroto Takenaka, Akira Fujiwara, and Masashi Arita
- Organizer
  The 6th IEEE International Nanoelectronics Conference, (IEEE INEC 2014)
- Place of Presentation
  Hokkaido Univ., Japan
- Year and Date
  2014-07-28 – 2014-07-30
- Invited
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Si単電子トランジスタにおける電界によるドット内準位の変化
- Author(s)
  佐藤光、内田貴史、吉岡勇、福地厚、有田正志、藤原聡、高橋庸夫
- Organizer
  春季応用物理学会
- Place of Presentation
  東海大学湘南キャンパス（平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] パターン依存酸化法を応用した直列三重結合シリコン量子ドットの作成
- Author(s)
  内田貴史、吉岡勇、佐藤光、福地厚、有田正志、藤原聡、高橋庸夫
- Organizer
  春季応用物理学会
- Place of Presentation
  東海大学湘南キャンパス（平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] 3端子ナノドットアレイの高機能の創出(2)
- Author(s)
  吉岡勇、佐藤光、内田貴史、有田正志、藤原聡、高橋庸夫
- Organizer
  秋季応用物理学会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Siマルチゲート二重量子ドット単電子トランジスタにおけるドット間結合の制御
- Author(s)
  内田貴史、吉岡勇、佐藤光、藤原聡、有田正志、高橋庸夫
- Organizer
  応用物理学会日本光学会北海道支部合同学術講演会
- Place of Presentation
  旭川市　勤労者福祉会館
- Year and Date
  2015-01-09 – 2015-01-10
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Tunable coupling capacitance of double-quantum-dot single-electron transistor with multiple gates
- Author(s)
  Takafumi Uchida, Isamu Yoshioka, Hikaru Sato, Masashi Arita, Akira Fujiwara, and Yasuo Takahashi
- Organizer
  2014 Silicon Nanoelectronics Workshop (SNW-2014)
- Place of Presentation
  Hilton Hawaian Village, Honolulu, Hawaii
- Year and Date
  2014-06-08 – 2014-06-09
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Double-quantum-dot Si single-electron transistor with multiple gates,
- Author(s)
  Takafumi Uchida, Isamu Yoshioka, Hikaru Sato, Masashi Arita, Akira Fujiwara, and Yasuo Takahashi
- Organizer
  The 6th IEEE International Nanoelectronics Conference, (IEEE INEC 2014)
- Place of Presentation
  Hokkaido Univ., Japan
- Year and Date
  2014-07-28 – 2014-07-31
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] 多入力・多出力高機能デバイスを念頭においた3端子ナノドットアレイの高機能特性
- Author(s)
  吉岡勇、佐藤光、内田貴史、福地厚、有田正志、藤原聡、高橋庸夫
- Organizer
  電子情報通信学会技術報告　電子デバイス研究会
- Place of Presentation
  北海道大学
- Year and Date
  2015-02-05 – 2015-02-06
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] マルチゲートSi単電子トランジスタを用いたpotential barrierの電圧制御
- Author(s)
  内田貴史、吉岡勇、佐藤光、有田正志、藤原聡、高橋庸夫
- Organizer
  秋季応用物理学会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Highly functionality of three-terminals nanodot array
- Author(s)
  Isamu Yoshioka, Hikaru Sato, Takafumi Uchida, Akira Fujiwara, Masashi Arita, and Yasuo Takahashi
- Organizer
  The 6th IEEE International Nanoelectronics Conference, (IEEE INEC 2014)
- Place of Presentation
  Hokkaido Univ., Japan
- Year and Date
  2014-07-28 – 2014-07-31
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] The research of excited states in Si-SET
- Author(s)
  Hikaru Sato, Takafumi Uchida, Isamu Yoshioka, Akira Fujiwara, Masashi Arita, and Yasuo Takahashi
- Organizer
  The 6th IEEE International Nanoelectronics Conference, (IEEE INEC 2014)
- Place of Presentation
  Hokkaido Univ., Japan
- Year and Date
  2014-07-28 – 2014-07-31
- Data Source
  KAKENHI-PROJECT-24360128
[Presentation] Si単電子トランジスタにおける励起準位の分類
- Author(s)
  佐藤光、内田貴史、吉岡勇、有田正志、藤原聡、高橋庸夫
- Organizer
  秋季応用物理学会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360128

1. ONO Yukinori (80374073)

# of Collaborated Projects: 5 results

# of Collaborated Products: 29 results
2. NISHIGUCHI Katsuhiko (00393760)

# of Collaborated Projects: 4 results

# of Collaborated Products: 36 results
3. TAKAHASHI Yasuo (90374610)

# of Collaborated Projects: 3 results

# of Collaborated Products: 50 results
4. ARITA Masashi (20222755)

# of Collaborated Projects: 2 results

# of Collaborated Products: 31 results
5. INOKAWA Hiroshi (50393757)

# of Collaborated Projects: 2 results

# of Collaborated Products: 27 results
6. 山端元音 (00751702)

# of Collaborated Projects: 2 results

# of Collaborated Products: 25 results
7. 金子晋久 (30371032)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. 島田宏 (60216067)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. KAGESHIMA Hiroyuki (70374072)

# of Collaborated Projects: 1 results

# of Collaborated Products: 13 results
10. NOBORISAKA Jinichiro (30515573)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
11. Tabe Michiharu (80262799)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. SHINADA Takahiro (30329099)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. MIZUTA Hiroshi (90372458)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. MORARU Daniel (60549715)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 中村秀司 (70613991)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 池田浩也 (00262882)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. TOKURA Yasuhiro

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
18. 福地厚

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Fujiwara Akira. 藤原 聡

Fujiwara Akira 藤原 聡

FUJIWARA Akira 藤原 聡

Research Projects

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Research on emerging devices based on electron-hydrodynamic effects

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単電子制御による量子標準・極限計測技術の開発Principal Investigator

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Quantum Standards and Ultimate Precision Measurements Based on Single ElectronsPrincipal Investigator

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Multi-input and multi-output flexible nanodot-array devices operating with multiple valued ReRAM

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Development of dopant atom devices based on silicon nanostructures

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Control of dielectric function by making nano-scale structure of IV-group semiconductor

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シリコンナノドットを用いた論理機能選択デバイス

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Studies on single-electron devices and circuits based on silicon integrated circuit process

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Control of single electrons using bonor levels in silicon

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[Book] "Silicon Single-Electron Devices, " in Device Applications of Silicon Nanocrystals and Nanostructures Koshida, Nobuyoshi (ed.)2009

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[Book] "Single-Electron Transistor and its Logic Application" in Nanotechnology2008

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[Journal Article] Seebeck effect in a nanometer-scale dot in a Si nanowire observed with electron counting statistics2022

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[Journal Article] Critical conductance of two-dimensional electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor2021

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[Journal Article] Understanding the mechanism of tunable-barrier single-electron pumping: Mechanism crossover and optimal accuracy2021

Author(s)

Fujiwara Akira. 藤原聡

Fujiwara Akira 藤原聡

FUJIWARA Akira 藤原聡