IKENOUE HIROSHI 池上浩

… Alternative Names

IKENOUE Hiroshi 池上浩

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Researcher Number	70413862
Other IDs
Affiliation (Current)	2025: 高知工科大学, 総合研究所, 特任教授
Affiliation (based on the past Project Information) *help	2015: 九州大学, 大学院システム情報科学研究院, 准教授
Review Section/Research Field	Except Principal Investigator Electron device/Electronic equipment
Keywords	Except Principal Investigator 4H-SiC / ドーピング / 電力用半導体素子 / JBS / パワーデバイス / オーミック接触 / JBSダイオード / 液中レーザー / レーザードーピング / レーザープロセッシング / SiC / 炭化シリコン

Study on high-speed doping mechanism of wet laser processing
- Principal Investigator
  
  ASANO Tanemasa
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kyushu University

All 2016 2015 2014 2013 Other

All Journal Article Presentation Patent

[Journal Article] Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser2016
- Author(s)
  A. Ikeda, D. Marui, H. Ikenoue, T. Asano
- Journal Title
  
  Material Science Forum
  
  Volume: 821-823 Pages: 448-445
- DOI
  10.4028/www.scientific.net/msf.821-823.448
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26420309, KAKENHI-PROJECT-25289105
[Journal Article] Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC2016
- Author(s)
  A. Ikeda, R.Sumina, H. Ikenoue, T. Asano
- Journal Title
  
  Material Science Forum
  
  Volume: 824
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289105
[Journal Article] Al doping of 4H-SiC by laser irradiation to coated Al film and its application2016
- Author(s)
  A. Ikeda, R.Sumina, H. Ikenoue, T. Asano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4S Pages: 04ER07-04ER07
- DOI
  10.7567/jjap.55.04er07
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26420309, KAKENHI-PROJECT-25289105, KAKENHI-PROJECT-16H02342
[Journal Article] Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen2015
- Author(s)
  A. Ikeda, D. Marui, H. Ikenoue, T. Asano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 4S Pages: 04DP02-04DP02
- DOI
  10.7567/jjap.54.04dp02
- NAID
  210000145089
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289105, KAKENHI-PROJECT-26420309
[Journal Article] Formation of pn junction in 4H-SiC by irradiation of excimer laser in phosphoric solution2014
- Author(s)
  D. Marui, K. Nishi, A. Ikeda, H. Ikenoue, T. Asano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289105
[Journal Article] Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution2014
- Author(s)
  D. Marui, A. Ikeda, K. Nishi, H. Ikenoue, T. Asano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 6S Pages: 06JF03-06JF03
- DOI
  10.7567/jjap.53.06jf03
- NAID
  210000144101
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289105, KAKENHI-PROJECT-26420309
[Journal Article] n- and p-type doping of 4H-SiC by wet-chemical laser processing2014
- Author(s)
  K. Nishi, A. Ikeda, D. Marui, H. Ikenoue, T. Asano
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 645-648
- DOI
  10.4028/www.scientific.net/msf.778-780.645
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289105
[Journal Article] Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution2013
- Author(s)
  K. Nishi, A. Ikeda, D. Marui, H. Ikenoue, T. Asano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 6S Pages: 06GF02-06GF02
- DOI
  10.7567/jjap.52.06gf02
- NAID
  210000142360
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289105
[Patent] レーザドーピング装置及びレーザドーピング方法2015
- Inventor(s)
  大久保智幸，池上浩，池田晃裕，浅野種正，若林理
- Industrial Property Rights Holder
  ギガフォトン，九州大学
- Industrial Property Rights Type
  特許
- Filing Date
  2015-03-30
- Overseas
- Data Source
  KAKENHI-PROJECT-25289105
[Patent] 不純物導入装置、不純物導入方法及び半導体素子の製造方法2015
- Inventor(s)
  池田晃裕，池上浩，浅野種正井口研一，中澤治雄，関康和
- Industrial Property Rights Holder
  富士電機，九州大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2015-035615
- Filing Date
  2015-02-25
- Data Source
  KAKENHI-PROJECT-25289105
[Patent] 不純物導入方法及び半導体素子の製造方法2014
- Inventor(s)
  池上浩，池田晃裕，浅野種正井口研一、中澤治雄、関康和、松村徹
- Industrial Property Rights Holder
  富士電機，九州大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-174567
- Filing Date
  2014-08-28
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] SiNx膜レーザーアブレーションによる4H-SiCへの窒素ドーピングと窒素拡散機構に関する研究2016
- Author(s)
  小島　遼太, 池上浩, 諏訪　輝, 池田晃裕, 中村大輔, 浅野種正, 岡田龍雄
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] SiNx膜レーザーアブレーションによる4H-SiCへの窒素ドーピング及び電気特性評価2016
- Author(s)
  小島　遼太, 池上浩, 諏訪　輝, 池田晃裕, 中村大輔, 浅野種正, 岡田龍雄
- Organizer
  レーザー学会学術講演会第 36 回年次大会
- Place of Presentation
  名古屋
- Year and Date
  2016-01-10
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films2016
- Author(s)
  R. Kojima, H. Ikenoue, T. Suwa, A. Ikeda, Daisuke Nakamura, T. Asano, Tatsuo Okada
- Organizer
  SPIE　Photonics West
- Place of Presentation
  San Francisco
- Year and Date
  2016-02-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] 堆積薄膜へのレーザ照射による4H-SiCへのAlのドーピング特性2016
- Author(s)
  角名　陸歩, 池田晃裕, 池上浩, 浅野種正
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] Local nitrogen doping in 4H-SiC by laser irradiation in atmospheric-pressure plasma2015
- Author(s)
  R. Kojima, H. Ikenoue, Yosuke Watanabe, A. Ikeda, Daisuke Nakamura, T. Asano, T. Okada
- Organizer
  SPIE Photonics West
- Place of Presentation
  サンフランシスコ
- Year and Date
  2015-02-11
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] Al Doping of 4H-SiC by Laser Irradiation to Coated Film and Its Application to Junction Barrier Schottky Diode2015
- Author(s)
  A. Ikeda, R. Sumina, H. Ikenoue, T. Asano
- Organizer
  Int. Conf. Solid State Devices and Materials
- Place of Presentation
  札幌
- Year and Date
  2015-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] Al doping from laser irradiated Al film deposited on 4H‐SiC2015
- Author(s)
  A. Ikeda, R. Sumina, H. Ikenoue, T. Asano
- Organizer
  16th International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Giardini Naxos
- Year and Date
  2015-10-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] Nitrogen doping of 4H-SiC by excimer laser irradiation in liquid nitrogen2014
- Author(s)
  A. Ikeda, D. Marui, H. Ikenoue, T. Asano
- Organizer
  2014 Int'l. Conf. Solid State Devices and Materials
- Place of Presentation
  つくば市
- Year and Date
  2014-09-09
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser2014
- Author(s)
  A. Ikeda, D. Marui, H. Ikenoue, T. Asano
- Organizer
  10th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  グルノーブル
- Year and Date
  2014-09-22
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] Characteristic of pn Junction Formed in 4H-SiC by using Excimer-laser Processing in Phosphoric Solution
- Author(s)
  A. Ikeda, K. Nishi, D. Marui, H. Ikenoue, T. Asano
- Organizer
  13th International Workshop on Junction Technology
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] Formation of pn junction in 4H-SiC by irradiation of excimer laser in phosphoric solution
- Author(s)
  K. Nishi, A. Ikeda, D. Marui, H. Ikenoue, T. Asano
- Organizer
  2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Seoul
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] Aluminum Doping of 4H-SiC using Chemical Wet Laser Processing
- Author(s)
  D. Marui, K. Nishi, A. Ikeda, H. Ikenoue, T. Asano
- Organizer
  26th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Sapporo
- Data Source
  KAKENHI-PROJECT-25289105
[Presentation] n- and p-type doping of 4H-SiC by wet-chemical laser processing
- Author(s)
  K. Nishi, A. Ikeda, D. Marui, H. Ikenoue, T. Asano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki
- Data Source
  KAKENHI-PROJECT-25289105

1. ASANO Tanemasa (50126306)

# of Collaborated Projects: 1 results

# of Collaborated Products: 21 results
2. IKEDA Akihiro (60315124)

# of Collaborated Projects: 1 results

# of Collaborated Products: 21 results

IKENOUE HIROSHI 池上 浩

IKENOUE Hiroshi 池上 浩

Research Projects

Research Products

Co-Researchers

Study on high-speed doping mechanism of wet laser processing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC2016

Author(s)

Journal Title

Data Source

[Journal Article] Al doping of 4H-SiC by laser irradiation to coated Al film and its application2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen2015

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Formation of pn junction in 4H-SiC by irradiation of excimer laser in phosphoric solution2014

Author(s)

Journal Title

Data Source

[Journal Article] Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution2014

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] n- and p-type doping of 4H-SiC by wet-chemical laser processing2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution2013

Author(s)

Journal Title

DOI

NAID

Data Source

[Patent] レーザドーピング装置及びレーザドーピング方法2015

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Patent] 不純物導入装置、不純物導入方法及び半導体素子の製造方法2015

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

Data Source

[Patent] 不純物導入方法及び半導体素子の製造方法2014

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

Data Source

[Presentation] SiNx膜レーザーアブレーションによる4H-SiCへの窒素ドーピングと窒素拡散機構に関する研究2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] SiNx膜レーザーアブレーションによる4H-SiCへの窒素ドーピング及び電気特性評価2016

Author(s)

IKENOUE HIROSHI 池上浩

IKENOUE Hiroshi 池上浩