Eriguchi Koji 江利口浩二

… Alternative Names

ERIGUCHI Koji 江利口浩二

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Researcher Number	70419448
Other IDs
Affiliation (Current)	2025: 京都大学, 工学研究科, 教授
Affiliation (based on the past Project Information) *help	2020 – 2024: 京都大学, 工学研究科, 教授 2016 – 2018: 京都大学, 工学研究科, 教授 2012 – 2015: 京都大学, 工学(系)研究科(研究院), 准教授 2013: 京都大学, 工学研究科, 准教授 2010 – 2011: Kyoto University, 大学院・工学研究科, 准教授 2007 – 2011: 京都大学, 工学研究科, 准教授 2006: KYOTO UNIVERSITY, Graduate School of Engineering, Associate Professor, 工学研究科, 助教授
Review Section/Research Field	Principal Investigator Basic Section 26050:Material processing and microstructure control-related / Composite materials/Surface and interface engineering / Material processing/treatments / Medium-sized Section 28:Nano/micro science and related fields / Material processing/Microstructural control engineering Except Principal Investigator Plasma science / Fluid engineering, Thermal engineering, and related fields / Plasma electronics / Science and Engineering / Science and Engineering
Keywords	Principal Investigator プラズマ / 欠陥 / 電気容量 / 誘電率 / トンネルリーク電流 / 窒化ホウ素 / シリコン / 高密度プラズマ / 電気特性 / 光学特性 … More / 結合状態 / ナノ材料 / 分子動力学 / 欠陥層 / トランジスタ / 電磁波照射 / 窒化シリコン / ナノ欠陥構造 / 微分電気容量 / 窒化ホウ素膜 / マイクロ波 / シリコン窒化膜 / マイクロ波照射 / エネルギー / フラックス / イオンエネルギー / 確率過程 / ナノ構造 / 表面処理 / プラズマ処理 / 材料加工・処理 / 結晶・組成制御 / 有機材料 / 有機膜 / 電子 / プラズマプロセス / 表面・界面 / 変調反射率分光 / 分子動力学法 / 欠陥構造 / 極低消費電力 / 表面・界面制御 / 界面層 / レーザー / 誘電関数 / 表面界面改質 … More Except Principal Investigator 超微細加工形状 / 半導体超微細化 / 表面・界面物性 / プラズマ化学 / プラズマ加工 / プラズマエッチング / 反応粒子輸送 / プラズマ・表面過程揺動 / 細胞分取 / 信頼性工学 / マイクロデバイス / 粒子と細胞の運動制御 / 確率微分方程式 / ゆらぎ / 信頼性と性能の評価と予測 / 高速分取 / 粒子運動制御 / 精度予測 / 信頼性評価 / 確率論 / マイクロ流体工学 / ゆらぎと確率論 / マイクロ流路 / 分取技術 / 位置決めとタイミング制御 / 誘電泳動力 / 粒子と細胞 / 微細加工形状 / Etching / Plasma Processing / Transport of Reactive Particles / Etched Profiles / Semiconductor Fabrication / Surface and Interfaces / Plasma Chemistry / Plasma Etching / エッチング / プラズマプロセス / 表面ラフネス / 反応生成物 / 超微細加工技術 / 高温反応場 / 亜音速・超音速流れ場 / MEMS / 高温反応揚 / 亜音速・超音速流れ揚 / 軸対称表面波励起プラズマ / マイクロ波励起プラズマ / プラズマスラスタ / マイクロノズル / マイクロプラズマ Less

超高密度反応性プラズマ法による窒化ホウ素ナノ結晶集合体構造の信頼性物理の研究Principal Investigator
- Principal Investigator
  
  江利口浩二
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 26050:Material processing and microstructure control-related
- Research Institution
  Kyoto University
Effects of dielectric loss mechanisms at electron trapping sites on damage recovery and reliability improvement in thin filmsPrincipal Investigator
- Principal Investigator
  
  Eriguchi Koji
- Project Period (FY)
  2021 – 2022
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  Kyoto University
Design of sp-bonds in functional BN films by arc discharge with independent parameter controlPrincipal Investigator
- Principal Investigator
  
  Eriguchi Koji
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 26050:Material processing and microstructure control-related
- Research Institution
  Kyoto University
Reliability evaluation and characteristic prediction in microfluidic devices applying stochastic process of random fluctuation problem
- Principal Investigator
  
  Tatsumi Kazuya
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Research Field
  
  Fluid engineering, Thermal engineering, and related fields
- Research Institution
  Kyoto University
Study of defect generation processes in nano-scale devices and the deign methodology based on stochastic theoryPrincipal Investigator
- Principal Investigator
  
  Eriguchi Koji
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Composite materials/Surface and interface engineering
- Research Institution
  Kyoto University
Plasma-Induced Formation of Nanoscale Ripple Structures on Surfaces
- Principal Investigator
  
  ONO Kouichi
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Plasma electronics
- Research Institution
  Osaka University
  Kyoto University
Study of structure modification of boron nitride films by plasma exposure - the effect of ion energy distribution functionPrincipal Investigator
- Principal Investigator
  
  Eriguchi Koji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Material processing/Microstructural control engineering
- Research Institution
  Kyoto University
Study of plasma-solid surface interaction control for future organic devices with the optimized dielectric constantsPrincipal Investigator
- Principal Investigator
  
  ERIGUCHI Koji
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Composite materials/Surface and interface engineering
- Research Institution
  Kyoto University
Study of defect-related dielectric function change and the process optimiztion framework for ultimately low power systemsPrincipal Investigator
- Principal Investigator
  
  ERIGUCHI Koji
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Material processing/treatments
- Research Institution
  Kyoto University
Plasma-Surface Interactions during Plasma Etching for Next-Generation Nanoscale Device Fabrication
- Principal Investigator
  
  ONO Kouichi
- Project Period (FY)
  2009 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Kyoto University
Plasma-Surface Interactions for Nanometer-scale Plasma Etching Processes
- Principal Investigator
  
  ONO Kouicti
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Plasma science
- Research Institution
  Kyoto University
Plasma process design for material surface treatment in the nano-scale regime utilizing dielectric-constant analysis techniquesPrincipal Investigator
- Principal Investigator
  
  ERIGUCHI Koji
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Material processing/treatments
- Research Institution
  Kyoto University
マイクロプラズマスラスタの研究開発:高温反応場と高速流れ場の競合現象の解明と制御
- Principal Investigator
  
  ONO Kouichi
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kyoto University
A Study of Plasma Chemistry in the Gas Phase and on Surfaces during Plasma Etching in Chlorine-and Bromine-Containing Plasmas
- Principal Investigator
  
  ONO Kouichi
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Plasma science
- Research Institution
  KYOTO UNIVERSITY

[Book] プラズマプロセス技術 (第4章ナノエッチング技術, 分担執筆)2017
- Author(s)
  斧高一，江利口浩二，鷹尾祥典
- Total Pages
  273
- Publisher
  森北出版
- Data Source
  KAKENHI-PROJECT-15H03582
[Book] Application of Molecular Dynamics Simulations to Plasma Etch Damage in Advanced Metal-Oxide- Semiconductor Field-Effect Transistors, Molecular Dynamics - Studies of Synthetic and Biological Macromolecules2012
- Author(s)
  K. Eriguchi
- Data Source
  KAKENHI-PROJECT-23360321
[Book] Molecular Dynamics – Studies of Synthetic and Biological Macromolecules - Chap. 112012
- Author(s)
  K. Eriguchi（分担執筆）
- Total Pages
  432
- Publisher
  InTech
- Data Source
  KAKENHI-PROJECT-23360321
[Book] 「2009半導体テクノロジー大全」第4編, 第4章, 4節 "高誘電体/電極材料エッチング技2009
- Author(s)
  斧高一, 江利口浩二 [分担執筆]
- Total Pages
  684
- Publisher
  電子ジャーナル社
- Data Source
  KAKENHI-PROJECT-21340169
[Book] 2009半導体テクノロジー大全2009
- Author(s)
  斧高一, 江利口浩二
- Publisher
  電子ジャーナル社
- Data Source
  KAKENHI-PROJECT-21340169
[Book] 「2007半導体テクノロジー大全」第4編第4章第5節"高誘電体/電極材料エッチング技術"2007
- Author(s)
  斧高一, 江利口浩二
- Publisher
  電子ジャーナル社(印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Book] 2007半導体テクノロジー大全(第4編第4章第5節"高誘電体/電極材料エッチング技術")2007
- Author(s)
  斧高一, 江利口浩二(分担執筆)
- Publisher
  電子ジャーナル社(印刷中)
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Spectroscopic ellipsometry characterization of boron nitride films synthesized by a reactive plasma-assisted coating method2022
- Author(s)
  Takashi Hamano, Takayuki Matsuda, Yuya Asamoto, Masao Noma, Shigehiko Hasegawa, Michiru Yamashita, Keiichiro Urabe, and Koji Eriguchi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 120 Issue: 3 Pages: 031904-031904
- DOI
  10.1063/5.0077147
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02481, KAKENHI-PROJECT-20J22727
[Journal Article] Ion irradiation-induced sputtering and surface modification of BN films prepared by a reactive plasma-assisted coating technique2022
- Author(s)
  Takayuki Matsuda, Takashi Hamano, Yuya Asamoto, Masao Noma, Michiru Yamashita, Shigehiko Hasegawa, Keiichiro Urabe, and Koji Eriguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SI Pages: SI1014-SI1014
- DOI
  10.35848/1347-4065/ac5d16
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22KJ2022, KAKENHI-PROJECT-20H02481
[Journal Article] First-principles predictions of electronic structure change in plasma-damaged materials2018
- Author(s)
  Yuta Yoshikawa and Koji Eriguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 6S2 Pages: 06JD04-06JD04
- DOI
  10.7567/jjap.57.06jd04
- NAID
  210000149201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K14405
[Journal Article] Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas2018
- Author(s)
  Takashi Hamano and Koji Eriguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 6S2 Pages: 06JD02-06JD02
- DOI
  10.7567/jjap.57.06jd02
- NAID
  210000149199
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K14405
[Journal Article] Optical and electrical characterization methods of plasma-induced damage in silicon nitride films2018
- Author(s)
  Tomohiro Kuyama and Koji Eriguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 6S2 Pages: 06JD03-06JD03
- DOI
  10.7567/jjap.57.06jd03
- NAID
  210000149200
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K14405
[Journal Article] An evaluation method of the profile of plasma-induced defects based on capacitance-voltage measurement2017
- Author(s)
  Yukimasa Okada, Kouichi Ono, and Koji Eriguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 6S2 Pages: 06HD04-06HD04
- DOI
  10.7567/jjap.56.06hd04
- NAID
  210000147963
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K14405
[Journal Article] Surface morphology evolution during plasma etching: roughening, smoothing and ripple formation2017
- Author(s)
  K. Ono, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi
- Journal Title
  
  J. Phys. D: Appl. Phys.
  
  Volume: 50 Issue: 41 Pages: 414001-414001
- DOI
  10.1088/1361-6463/aa8523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03582
[Journal Article] Defect generation in electronic devices under plasma exposure: Plasma-induced damage2017
- Author(s)
  Koji Eriguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 6S2 Pages: 06HA01-06HA01
- DOI
  10.7567/jjap.56.06ha01
- NAID
  210000147946
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H04159
[Journal Article] Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films2017
- Author(s)
  Kentaro Nishida, Kouichi Ono, and Koji Eriguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 6S2 Pages: 06HD01-06HD01
- DOI
  10.7567/jjap.56.06hd01
- NAID
  210000147960
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H04159
[Journal Article] Electrical characterization of carrier trapping behavior of defects created by plasma exposures2017
- Author(s)
  Koji Eriguchi and Yukimasa Okada
- Journal Title
  
  Journal of Physics D: Applied Physics
  
  Volume: 50 Issue: 26 Pages: 26LT01-26LT01
- DOI
  10.1088/1361-6463/aa731a
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K14405, KAKENHI-PROJECT-15H04159
[Journal Article] Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation2017
- Author(s)
  Z. Wei and K. Eriguchi
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 64 Issue: 5 Pages: 2201-2206
- DOI
  10.1109/ted.2017.2681104
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K14405
[Journal Article] Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing2017
- Author(s)
  Kengo Shinohara, Kentaro Nishida, Kouichi Ono, and Koji Eriguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 6S2 Pages: 06HD03-06HD03
- DOI
  10.7567/jjap.56.06hd03
- NAID
  210000147962
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H04159
[Journal Article] Modeling of defect generation during plasma etching and its impact on electronic device performance-plasma-induced damage2017
- Author(s)
  Koji Eriguchi
- Journal Title
  
  Journal of Physics D: Applied Physics
  
  Volume: 50 Issue: 33 Pages: 333001-333001
- DOI
  10.1088/1361-6463/aa7523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H04159
[Journal Article] Surface smoothing during plasma etching of Si in Cl22016
- Author(s)
  N. Nakazaki, H. Matsumoto, H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 109 Issue: 20
- DOI
  10.1063/1.4967474
- NAID
  120005893556
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03582
[Journal Article] Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate2015
- Author(s)
  Y. Nakakubo, K. Eriguchi, K. Ono
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 4 Issue: 6 Pages: N5077-N5083
- DOI
  10.1149/2.0121506jss
- NAID
  120005756254
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25630293
[Journal Article] Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate2015
- Author(s)
  T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono
- Journal Title
  
  J. Vac. Sci. Technol. A
  
  Volume: 33 Issue: 6 Pages: 061403-061403
- DOI
  10.1116/1.4927128
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25630293
[Journal Article] Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals2015
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 118 Issue: 23
- DOI
  10.1063/1.4937449
- NAID
  120005694187
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03582, KAKENHI-PROJECT-15J04793
[Journal Article] Impacts of plasma process-induced damage on MOSFET parameter variability and reliability2015
- Author(s)
  K. Eriguchi, K. Ono
- Journal Title
  
  Microelectronics Reliability
  
  Volume: 55 Issue: 9-10 Pages: 1464-1470
- DOI
  10.1016/j.microrel.2015.07.004
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25630293
[Journal Article] Surface roughening and rippling during plasma etching of Si : Numerical investigations and a comparison with experiments2014
- Author(s)
  H.Tsuda, N.Nakazaki, Y.Takao, K.Eriguchi, and K.Ono
- Journal Title
  
  J. Vac. Sci. Technol.
  
  Volume: B 32 Issue: 3
- DOI
  10.1116/1.4874309
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas2014
- Author(s)
  N.Nakazaki, Y.Takao, K.Eriguchi, and K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 5 Pages: 056201-056201
- DOI
  10.7567/jjap.53.056201
- NAID
  210000143754
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Effects of plasma-induced charging damage on random telegraph noise in metal-oxide-semiconductor field- effect transistors with SiO 2 and high-k gate dielectrics2014
- Author(s)
  M. Kamei, Y. Takao, K. Eriguchi, K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 3S2 Pages: 03DF02-03DF02
- DOI
  10.7567/jjap.53.03df02
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321
[Journal Article] Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma- induced Si substrate damage2014
- Author(s)
  T. Okumura, K. Eriguchi, M. Saitoh, H. Kawaura
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 3S2 Pages: 03DG01-03DG01
- DOI
  10.7567/jjap.53.03dg01
- NAID
  210000143499
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321, KAKENHI-PROJECT-25630293
[Journal Article] Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique2014
- Author(s)
  M. Noma, K. Eriguchi, Y. Takao, N. Terayama, K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 3S2 Pages: 03DB02-03DB02
- DOI
  10.7567/jjap.53.03db02
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321, KAKENHI-PROJECT-25630293
[Journal Article] Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors2014
- Author(s)
  K. Eriguchi, A. Matsuda, Y. Takao, K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53 Issue: 3S2 Pages: 03DE02-03DE02
- DOI
  10.7567/jjap.53.03de02
- NAID
  210000143495
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321, KAKENHI-PROJECT-25630293
[Journal Article] μ-Photoreflectance Spectroscopy for Microscale Monitoring of PlaBsma-induced Physical Damage on Si Substrate2014
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 3S2 Pages: 03DF01-03DF01
- DOI
  10.7567/jjap.53.03df01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321
[Journal Article] Surface roughening and rippling during plasma etching of Si: Numerical investigations and a comparison with experiments2014
- Author(s)
  H. Tsuda, N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  J. Vac. Sci. Technol. B
  
  Volume: 32
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] プラズマナノ加工における表面ラフネスとリップル形成機構2013
- Author(s)
  斧高一, 津田博隆, 中崎暢也, 鷹尾祥典, 江利口浩二
- Journal Title
  
  表面科学
  
  Volume: 34 Pages: 528-534
- NAID
  10031202796
- URL
  https://www.jstage.jst.go.jp/browse/jsssj/34/10/_contents/-char/ja/
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence2012
- Author(s)
  Hirotaka Tsuda, Yoshinori Takao, Koji Friguchi Kouichi Onc
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 8S1 Pages: 08HC01-08HC01
- DOI
  10.1143/jjap.51.08hc01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01415, KAKENHI-PLANNED-21110008, KAKENHI-PROJECT-23360321
[Journal Article] Effect of capacitive coupling in a miniature inductively coupled plasma source2012
- Author(s)
  Y.Takao, K.Eriguchi, and K.Ono
- Journal Title
  
  J. Appl. Phys
  
  Volume: 112 Issue: 9 Pages: 93306-93306
- DOI
  10.1063/1.4764333
- NAID
  120004920433
- URL
  http://hdl.handle.net/2433/161047
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008, KAKENHI-PROJECT-23360321, KAKENHI-PROJECT-23760769
[Journal Article] High-k MOSFET performance degradation by plasma process-induced charging damage2012
- Author(s)
  K. Eriguchi, M. Kamei, Y. Takao, K. Ono
- Journal Title
  
  2012 IEEE International Integrated Reliability Workshop Final Report
  
  Pages: 80-84
- DOI
  10.1109/iirw.2012.6468925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321
[Journal Article] Particle Simulations of Sheath Dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges2011
- Author(s)
  Y.Takao, K.Matsuoka, K.Eriguchi, and K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 50 Issue: 8S1 Pages: 08JC02-08JC02
- DOI
  10.1143/jjap.50.08jc02
- NAID
  210000071066
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008, KAKENHI-PROJECT-21340169
[Journal Article] Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal-Oxide-Semiconductor Field-Effect Transistors and the Optimization Methodology2011
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys. 50(掲載予定)
- NAID
  210000071116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Three-dimensional Atomic-scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-based Plasmas : Analysis of Profile Anomalies and Surface Roughness2011
- Author(s)
  H.Tsuda, H.Miyata, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.A.Appl.Phys.
  
  Volume: Vo.50, No.7 (in press)
- NAID
  210000071082
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Particle Simulations of Sheath Dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges2011
- Author(s)
  Y.Takao, K.Matsuoka, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.A.AppL.Phys.
  
  Volume: Vo.50, No.7 (in press)
- NAID
  210000071066
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Three-dimensional Atomic-scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-based Plasmas : Analysis of Profile Anomalies and Surface Roughness2011
- Author(s)
  H. Tsuda, H. Miyata, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50
- NAID
  210000071082
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices2011
- Author(s)
  K.Eriguchi, Y.Takao, and K.Ono
- Journal Title
  
  J. Vac. Sci. Technol
  
  Volume: A29 Issue: 4 Pages: 41303-41303
- DOI
  10.1116/1.3598382
- NAID
  120003133618
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008, KAKENHI-PROJECT-23360321
[Journal Article] Model for Effects of Rf Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching2011
- Author(s)
  K.Eriguchi, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys. 50(掲載予定)
- NAID
  210000071080
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Model for Effects of Rf Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching2011
- Author(s)
  K.Eriguchi, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50 Issue: 8S1 Pages: 08JE04-08JE04
- DOI
  10.1143/jjap.50.08je04
- NAID
  210000071080
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321
[Journal Article] Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-based Plasmas2011
- Author(s)
  Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 8S2 Pages: 08KB02-08KB02
- DOI
  10.1143/jjap.50.08kb02
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01415, KAKENHI-PLANNED-21110008
[Journal Article] Comparative study of plasma-charging damage in high-k dielectric and P-N junction and their effects on off-state leakage current of metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  M.Kamei, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys 50(掲載予定)
- NAID
  210000071117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy2011
- Author(s)
  Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 8S2 Pages: 08KD03-08KD03
- DOI
  10.1143/jjap.50.08kd03
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01382, KAKENHI-PROJECT-23360321
[Journal Article] Particle Simulations of Sheath Dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges2011
- Author(s)
  Y. Takao, K. Matsuoka, K. Eriguchi, and K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50
- NAID
  210000071066
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in high-k Metal-Oxide- Semiconductor Field-Effect Transistor2011
- Author(s)
  K. Eriguchi, M. Kamei, Y. Takao, K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 10S Pages: 10PG02-10PG02
- DOI
  10.1143/jjap.50.10pg02
- NAID
  210000071431
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321
[Journal Article] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy2011
- Author(s)
  A.Matsuda , Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys 50(掲載予定)
- NAID
  210000071115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Three-dimensional Atomic-scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-based Plasmas : Analysis of Profile Anomalies and Surface Roughness2011
- Author(s)
  Hirotaka Tsuda, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 8S1 Pages: 08JE06-08JE06
- DOI
  10.1143/jjap.50.08je06
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01415, KAKENHI-PLANNED-21110008
[Journal Article] Atomic-scale cellular model and profile simulation of Si etching : Formation of surface roughness and residue2010
- Author(s)
  H.Tsuda, M.Mori, Y.Takao, K.Eriguchi, and K.Ono
- Journal Title
  
  Thin Solid Films
  
  Volume: 518 Issue: 13 Pages: 3475-3480
- DOI
  10.1016/j.tsf.2009.11.043
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication : A numerical and experimental study2010
- Author(s)
  K.Ono, H.Ohta, and K.Eriguchi
- Journal Title
  
  Thin Solid Films
  
  Volume: 518 Issue: 13 Pages: 3461-3468
- DOI
  10.1016/j.tsf.2009.11.030
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication : A numerical and experimental study2010
- Author(s)
  K.Ono, H.Ohta, K.Eriguchi
- Journal Title
  
  Thin Solid Films Vol.518
  
  Pages: 3461-3468
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source2010
- Author(s)
  Y.Takao, N, Kusaba, K.Eriguchi, and K.Ono
- Journal Title
  
  J. Appl. Phys
  
  Volume: 108 Issue: 9
- DOI
  10.1063/1.3506536
- NAID
  120005553877
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis2010
- Author(s)
  A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Thin Solid Films 518
  
  Pages: 3481-3486
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys
- NAID
  40017116117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring2010
- Author(s)
  Y.Nakakubo, A.Matsuda, M.Fukasawa, Y.Takao, T.Tatsumi, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys 49
- NAID
  210000069055
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys 49
  
  Pages: 56203-56203
- NAID
  40017116117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  210000069053
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring2010
- Author(s)
  Y.Nakakubo, A.Matsuda, M.Fukasawa, Y.Takao, T.Tatsumi, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  210000069055
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Atomic-scale cellular model and profile simulation of Si etching : Analysis of profile anomalies and microscopic uniformity2010
- Author(s)
  H.Tsuda, M.Mori, Y.Takao, K.Eriguchi, and K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 49 Issue: 8S1 Pages: 08JE01-08JE01
- DOI
  10.1143/jjap.49.08je01
- NAID
  210000069057
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source2010
- Author(s)
  Y.Takao, N, Kusaba, K.Eriguchi, K.Ono
- Journal Title
  
  J.Appl.Phys.
  
  Volume: Vol.108, No.9
- NAID
  120005553877
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Atomic-scale Cellular Model and Profile Simulation of Si Etching : Analysis of Profile Anomalies and Microscopic Uniformity2010
- Author(s)
  H. Tsuda, M. Mori, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 49
- NAID
  210000069057
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  210000068176
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSIdevice fabrication : A numerical and experimental study2010
- Author(s)
  K. Ono, H. Ohta, and K. Eriguchi
- Journal Title
  
  Thin Solid Films
  
  Volume: 518 Pages: 3461-3468
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Bias frequency dependence of pn junction charging damage induced by plasma processing2010
- Author(s)
  M.Kamei, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Thin Solid Films 518
  
  Pages: 3469-3474
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys. 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Atomic-scale cellular model and profile simulation of Si etching : Analysis of profile anomalies and microscopic uniformity2010
- Author(s)
  H.Tsuda, M.Mori, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: Vol.49, No.8
- NAID
  210000069057
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs2009
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Journal Title
  
  IEEE Electron Device Lett. 30
  
  Pages: 1275-1277
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Plasma chemical behavior of reactants and reaction products during inductively coupled CF_4 plasma Etching of SiO_22009
- Author(s)
  H. Fukumoto, I. Fujikake, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  Plasma Sources Sci. Technol.
  
  Volume: 18
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled2009
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Journal Title
  
  IEEE Electron Device Lett. 30
  
  Pages: 1275-1277
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Effects of Mask Pattern Geometry on Plasma Etching Profiles2009
- Author(s)
  H. Fukumoto, K. Eriguchi, and K. Ono
- Journal Title
  
  Jpn. J. App. Phys.
  
  Volume: 48
- NAID
  40016743034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Numerical Study on Si Etching byMonoatomic Cl^+/Br^+ Beams and DiatomicBr_2^+/Cl_2^+/HB_r^+ Beams2009
- Author(s)
  T. Nagaoka, H. Ohta, K. Eriguchi, and K. Ono
- Journal Title
  
  Jpn. J. App. Phys.
  
  Volume: 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology2009
- Author(s)
  H.Tsuda, K.Eriguchi, K.Ono, and H.Ohta
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 2 Issue: 11 Pages: 116501-116501
- DOI
  10.1143/apex.2.116501
- NAID
  10027012154
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology2009
- Author(s)
  H.Tsuda, K.Eriguchi, K.Ono, H.Ohta
- Journal Title
  
  Appl.Phys.Express Vol.2, No.11
- NAID
  10027012154
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Plasma chemical behaviour of reactants and reaction products during inductively coupled C_F4 plasma Etching of SiO_22009
- Author(s)
  H.Fukumoto, I.Fujikake, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Plasma Sources Sci.Technol. Vol. 18, No. 4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Effects of Mask Pattern Geometry on Plasma Etching Profiles2009
- Author(s)
  H.Fukumoto, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.App.Phys. Vo. 48, No. 9
- NAID
  40016743034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Numerical Study on Si Etching by Monoatomic Cl^+/Br^+ Beams and Diatomic Br_2^+/Cl_2^+/HBr^+Beams2009
- Author(s)
  T.Nagaoka, H.Ohta, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.App.Phys. Vo. 48, No. 7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Micro plasma thruster for ultra small satellites: Plasma chemical and aerodynamical aspects2008
- Author(s)
  Y. Takao, T. Takahashi, K. Eriguchi, and K. Ono
- Journal Title
  
  Pure Appl. Chem. (In press)
- NAID
  120005553869
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] Numerical Analysis and Experiments of a Microwave-excited Microplasma Thruster2007
- Author(s)
  T. Takahashi, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  Proc. 30th Int. Electric Propulsion Conf. (30th IEPC), Florence, Italy, Sep. 2007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] A miniature electrothermal thruster using microwave-excited microplasmas : Thrust measurement and its comparison with numerical analysis2007
- Author(s)
  Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  J.Appl.Phys. (in press)
- NAID
  120002696049
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis2007
- Author(s)
  Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  J. Appl. Phys. Vol.101
- NAID
  120002696049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl_2/O_2 plasmas2006
- Author(s)
  Y.Osano, M.Mori, N.Itabashi, K.Takahashi, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys., Part 1 Vol.45, No.10B
  
  Pages: 8157-8162
- NAID
  10018339129
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl_2/O_2 plasmas2006
- Author(s)
  Y.Osano, M.Mori, N.Itabashi, K.Takahashi, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys., Part 1 Vol.45, No.10B
  
  Pages: 8157-8162
- NAID
  10018339129
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl_2/O_2 plasmas2006
- Author(s)
  Y.Osano, M.Mori, N.Itabashi, K.Takahashi, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.45,No.10B
  
  Pages: 8157-8162
- NAID
  10018339129
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster2006
- Author(s)
  Y.Takao, K.Ono, K.Takahashi, K.Eriguchi
- Journal Title
  
  Jpn.J.Appl. Phys. Vol.45, No.10B
  
  Pages: 8235-8240
- NAID
  10018339427
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] Profile simulation model including ion reflection on feature surfaces during plasma etching2006
- Author(s)
  S.Irie, Y.Osano, M.Mori, K.Eriguchi, K.Ono
- Journal Title
  
  Proc. 6th Int. Symp. Dry Process
  
  Pages: 35-36
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Etching Technology of High Dielectric Constant (High-k) and Metal Gate Materials
- Author(s)
  K.Ono, K.Eriguchi
- Journal Title
  
  Semiconductor Technology Outlook 2007, Chap.4, Sec.4.5 (Electronic Journal, Tokyo, 2007)[in Japanese] (in press)
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Presentation] 金属元素が窒化ホウ素膜中のsp3結合形成に及ぼす影響2024
- Author(s)
  朝本雄也，野間正男，長谷川繁彦，山下満，占部継一郎，江利口浩二
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26421
[Presentation] Formation and characterization of boron nitride films prepared by a reactive plasma-assisted coating technique2024
- Author(s)
  江利口浩二
- Organizer
  第15回グローバルプラズマフォーラム
- Invited
- Data Source
  KAKENHI-PROJECT-23K26421
[Presentation] ナノネットワーク構造解析に基づく微細トレンチ内の窒化ホウ素膜特性予測2023
- Author(s)
  濱野誉，松田崇行，朝本雄也，野間正男，長谷川繁彦，山下満，占部継一郎，江利口浩二
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02481
[Presentation] 反応性プラズマ支援成膜法による窒化ホウ素膜のナノネットワーク構造制御2023
- Author(s)
  濱野誉，松田崇行，朝本雄也，野間正男，長谷川繁彦，山下満，占部継一郎，江利口浩二
- Organizer
  応用物理学会シリコンテクノロジー分科会第242回研究集会
- Invited
- Data Source
  KAKENHI-PROJECT-20H02481
[Presentation] 熱電子供給型プラズマ支援成膜法による窒化ホウ素膜への金属元素導入制2023
- Author(s)
  朝本雄也，野間正男，長谷川繁彦，山下満，占部継一郎，江利口浩二
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26421
[Presentation] 金属不純物を含む六方晶窒化ホウ素の第一原理計算による解析2023
- Author(s)
  服部達哉，朝本雄也，野間正男，長谷川繁彦，山下満，占部継一郎，江利口浩二
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26421
[Presentation] sp結合ナノネットワーク構造変化に起因する窒化ホウ素膜特性遷移の解析2022
- Author(s)
  濱野誉，松田崇行，朝本雄也，野間正男，長谷川繁彦，山下満，占部継一郎，江利口浩二
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02481
[Presentation] 結合状態を制御した窒化ホウ素膜の高速堆積に向けた窒素ラジカルフラックス最大化に関する研究2022
- Author(s)
  朝本雄也，濱野誉，松田崇行，野間正男，長谷川繁彦，山下満，占部継一郎，江利口浩二
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02481
[Presentation] 熱電子供給型真空アーク放電の放電電流決定機構に基づくプロセス制御（II）2022
- Author(s)
  朝本雄也，松田崇行，濱野誉，野間正男，長谷川繁彦，山下満，占部継一郎，江利口浩二
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02481
[Presentation] Characterization of nano-network structure transition of boron nitride films by ion irradiation during the film growth2022
- Author(s)
  T. Hamano, T. Matsuda, Y. Asamoto, M. Noma, S. Hasegawa, M. Yamashita, K. Urabe, and K. Eriguchi
- Organizer
  43rd International Symposium on Dry Process: DPS2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02481
[Presentation] 電気伝導機構解析による窒化ホウ素膜/Si構造の剥離機構の検討2022
- Author(s)
  松田崇行，濱野誉，朝本雄也，野間正男，山下満，長谷川繁彦，占部継一郎，江利口浩二
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02481
[Presentation] Characterization of carrier conduction in a magnetically-confined vacuum arc discharge and its application to control of incident-ion flux to a substrate2021
- Author(s)
  Y. Asamoto, T. Matsuda, T. Hamano, M. Noma, S. Hasegawa, M. Yamashita K. Urabe, and K. Eriguchi
- Organizer
  42nd International Symposium on Dry Process: DPS2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02481
[Presentation] Controlling of nano-network structures in BN films by a reactive plasma assisted-coating technique and the sputtering characteristics against plasma exposure2021
- Author(s)
  T. Matsuda, T. Hamano, Y. Asamoto, M. Noma, S. Hasegawa, M. Yamashita K. Urabe, and K. Eriguchi
- Organizer
  42nd International Symposium on Dry Process: DPS2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02481
[Presentation] 反応性プラズマ支援成膜法に用いる熱電子供給型アーク放電の発光分光法を用いた電離機構解析2021
- Author(s)
  朝本雄也，松田崇行，濱野誉，野間正男，長谷川繁彦，山下満，占部継一郎，江利口浩二
- Organizer
  第38回プラズマプロセシング研究会／第33回プラズマ材料科学シンポジウム
- Data Source
  KAKENHI-PROJECT-20H02481
[Presentation] 過渡的プラズマダメージ形成過程を考慮したプロセスデザインの検討2019
- Author(s)
  濱野誉，占部継一郎，江利口浩二
- Organizer
  応用物理学会シリコンテクノロジー分科会第215回研究集会
- Invited
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] First-principles study on electronic structure modifications of Si substrate with the Cl-terminated surface2018
- Author(s)
  Y. Yoshikawa, K. Urabe, and K. Eriguchi
- Organizer
  40th International Symposium on Dry Process: DPS2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] Effects of Microwave Annealing on the Recovery of Microscopic Defects in Silicon Nitride Films2018
- Author(s)
  T. Kuyama, Y. Sato, K. Urabe, and K. Eriguchi
- Organizer
  40th International Symposium on Dry Process: DPS2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] プラズマプロセスにおける欠陥形成過程のモデリングと予測2018
- Author(s)
  江利口浩二
- Organizer
  第206回応用物理学会シリコンテクノロジー分科会研究会
- Invited
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] Comparative characterization of gas species dependence of transient behaviors in plasma-induced Si damage2018
- Author(s)
  T. Hamano, K. Urabe, and K. Eriguchi
- Organizer
  40th International Symposium on Dry Process: DPS2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] Surface ripple formation during plasma etching of silicon2017
- Author(s)
  K. Ono, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi
- Organizer
  70th Annual Gaseous Electronics Conference (GEC2017), Pittsburgh, PA, U.S.A.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] A comprehensive analysis of progressive behavior of plasma-induced damage formation in Si substrates2017
- Author(s)
  T. Hamano and K. Eriguchi
- Organizer
  39th International Symposium on Dry Process: DPS2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] Prediction of electronic structure change induced by plasma processing: A first-principles study2017
- Author(s)
  Y. Yoshikawa and K. Eriguchi
- Organizer
  39th International Symposium on Dry Process: DPS2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] Defect Generation in Si substrates during Plasma Processing2017
- Author(s)
  K. Eriguchi
- Organizer
  17th International Workshop on Junction Technology 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] Characterization technique of silicon nitride film damaged by plasma exposure”2017
- Author(s)
  T. Kuyama and K. Eriguchi
- Organizer
  39th International Symposium on Dry Process: DPS2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] 反応性プラズマ支援コーティング（RePAC/MEP-IP）法による高機能窒化ホウ素薄膜の形成2017
- Author(s)
  野間正男, 山下満, 江利口浩二, 長谷川繁彦
- Organizer
  2017年真空・表面科学合同講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15H04159
[Presentation] Origin of Plasma-Induced Surface Roughening and Ripple Formation during Plasma Etching of Silicon: A Monte Carlo Study2017
- Author(s)
  K. Ono, T. Hatsuse, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi
- Organizer
  34th Symposium on Plasma Processing (SPP34) / The 29th Symposium on Plasma Science for Materials (SPSM29)
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2017-01-18
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] プラズマ曝露による窒化ホウ素膜機械特性変化のナノインデンテーション法による解析2017
- Author(s)
  樋口智哉, 野間正男, 山下満, 長谷川繁彦, 江利口浩二
- Organizer
  第54回日本航空宇宙学会関西・中部支部合同秋季大会
- Data Source
  KAKENHI-PROJECT-15H04159
[Presentation] Model prediction of stochastic effects of plasma-induced damage in advanced electronic devices2017
- Author(s)
  K. Eriguchi
- Organizer
  6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] Origin of plasma-induced surface roughening and ripple formation during plasma etching2016
- Author(s)
  K. Ono, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi
- Organizer
  69th Annual Gaseous Electronics Conference (GEC2016)
- Place of Presentation
  Bochm, Germany
- Year and Date
  2016-10-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] プラズマプロセス誘起ダメージによるデバイス特性劣化の包括的モデル2016
- Author(s)
  江利口浩二、斧高一
- Organizer
  応用物理学会シリコンテクノロジー分科会
- Place of Presentation
  宝塚大学梅田キャンパス
- Year and Date
  2016-02-27
- Invited
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] True Random Number Generator using Current Difference based on a Fractional Stochastic Model in 40-nm Embedded ReRAM2016
- Author(s)
  Z. Wei, Y. Katoh, S.Ogasahara, Y. Yoshimoto, K. Kawai, Y. Ikeda, K. Eriguchi, K.Ohmori,S. Yoneda
- Organizer
  IEEE International Electron Device Meeting (IEDM) 2016
- Place of Presentation
  San Francisco, CA, USA
- Year and Date
  2016-12-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] 反応性プラズマ支援成膜法により形成したBN膜の構造変化と密着性2016
- Author(s)
  野間正男、山下満、江利口浩二、長谷川繁彦
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大　大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H04159
[Presentation] 層間絶縁膜へのプラズマダメージの電気的解析手法2016
- Author(s)
  西田健太郎、岡田行正、鷹尾祥典、江利口浩二、斧高一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Coatings of Boron Nitride Films for Vacuum Tribology by Reactive Plasma Assisted Coating (RePAC) Technology - Friction coefficient lowering under vacuum -2016
- Author(s)
  M. Noma, K. Eriguchi, M. Yamashita, S. Hasegawa
- Organizer
  The 7th Tsukuba International Coating Symposium (TICS7)
- Place of Presentation
  Tsukuba, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H04159
[Presentation] Formation of superhard c-BN films on the body and edge of cutting tools by reactive plasma-assisted coating (RePAC)2016
- Author(s)
  M. Noma, M. Yamashita, K. Eriguchi, S. Hasegawa
- Organizer
  The 16th International Conference on Precision Engineering
- Place of Presentation
  Hamamatsu, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H04159
[Presentation] Friction Coefficient Lowering in High-hardness Boron Nitride Films Under Ultra-high Vacuum2016
- Author(s)
  M. Noma, K. Eriguchi, M. Yamashita, S. Hasegawa
- Organizer
  AVS 63rd International Symposium & Exhibition
- Place of Presentation
  Nashville, TN, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H04159
[Presentation] RePAC法を用いたプラズマ窒化によるc-BN膜密着性の改善2016
- Author(s)
  野間正男，山下満，江利口浩二，長谷川繁彦
- Organizer
  第77 回応用物理学秋季学術講演会
- Place of Presentation
  新潟
- Data Source
  KAKENHI-PROJECT-15H04159
[Presentation] A new damage evaluation scheme predicting the nature of defects-an advanced capacitance-voltage technique2016
- Author(s)
  Yukimasa Okada, Kouichi Ono, Koji Eriguchi
- Organizer
  38th International Symposium on Dry Process
- Place of Presentation
  Sapporo, Hokkaido, Japan
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] Defect profiling of plasma-damaged layer by surface-controlled photoreflectance spectroscopy2016
- Author(s)
  Tomoya Higuchi, Yukimasa Okada, Kouichi Ono, Koji Eriguchi
- Organizer
  38th International Symposium on Dry Process
- Place of Presentation
  Sapporo, Hokkaido, Japan
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] An optical model for in-line analysis of plasma-induced interlayer dielectric damage2016
- Author(s)
  Kentaro Nishida, Kouichi Ono, Koji Eriguchi
- Organizer
  38th International Symposium on Dry Process
- Place of Presentation
  Sapporo, Hokkaido, Japan
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] Effects of plasma exposure on leakage and reliability parameters of dielectric film: New measures of damage?2016
- Author(s)
  Kengo Shinohara, Kentaro Nishida, Kouichi Ono, Koji Eriguchi
- Organizer
  38th International Symposium on Dry Process
- Place of Presentation
  Sapporo, Hokkaido, Japan
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14405
[Presentation] Characterization of polymorphism in boron nitride films prepared by Reactive Plasma-Assisted Coating2015
- Author(s)
  S. Hasegawa, M. Noma, M. Yamashita, K.Eriguchi
- Organizer
  The 19th SANKEN Int. Symp. / The 11th HANDAI Nanosci. Nanotechnol. Int. Symp.
- Place of Presentation
  Osaka, Japan
- Year and Date
  2015-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H04159
[Presentation] Impacts of plasma process-induced damage on MOSFET parameter variability and reliability2015
- Author(s)
  K. Eriguchi
- Organizer
  The 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
- Place of Presentation
  Toulouse, France
- Year and Date
  2015-10-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Surface orientation dependence of plasma-induced ion bombardment damage in Si substrate2015
- Author(s)
  Y. Okada, K. Eriguchi, K. Ono
- Organizer
  Proc. 37th International Symposium on Dry Process
- Place of Presentation
  Hyogo, Japan
- Year and Date
  2015-11-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Surface Orientation Dependence of Ion Bombardment Damage during Plasma Processing2015
- Author(s)
  Y. Okada, K. Eriguchi, K. Ono
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol.
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2015-06-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Surface rippling by oblique ion incidence during plasma etching of silicon: Experimental demonstration using sheath control plates2015
- Author(s)
  N. Nakazaki, H. Matsumoto, K. Eriguchi, and K. Ono
- Organizer
  68th Annual Gaseous Electronics Conference / 9th International Conference on Reactive Plasmas / 33rd Symposium on Plasma Processing (GEC2015/ICRP-9/SPP-31)
- Place of Presentation
  Honolulu, Hawaii, U.S.A.
- Year and Date
  2015-10-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] A new evaluation method to characterize low-k dielectric damage during plasma processing2015
- Author(s)
  K. Nishida, Y. Okada, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Proc. 37th International Symposium on Dry Process
- Place of Presentation
  Hyogo, Japan
- Year and Date
  2015-11-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Modeling of Plasma-induced Damage in Advanced Transistors in ULSI Circuits2015
- Author(s)
  K. Eriguchi
- Organizer
  Semiconductor Equipment and Materials International (SEMI) Korea, Technology Symposium
- Place of Presentation
  Seoul, South Korea
- Year and Date
  2015-02-05
- Invited
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Experimental demonstration of oblique ion incidence with sheath control plates during plasma etching of silicon2015
- Author(s)
  N. Nakazaki, H. Matumoto, S. Sonobe, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  37th International Symposium on Dry Process (DPS2015)
- Place of Presentation
  Awaji Island, Hyogo, Japan
- Year and Date
  2015-11-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] 反応性プラズマ支援成膜法により形成したBN 膜の構造と化学結合状態分析2015
- Author(s)
  長谷川繁彦、野間正男、山下満、江利口浩二
- Organizer
  2015年第76 回応用物理学会秋季学術講演
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H04159
[Presentation] Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout2015
- Author(s)
  T. Ikeda, A. Tanihara, N. Yamamoto, S. Kasai, K. Eriguchi, and K. Ono
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol.
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2015-06-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Impacts of plasma process parameters on mechanical properties of c-BN thin-films2014
- Author(s)
  M. Noma, K. Eriguchi, S. Hasegawa, M.Yamashita, Y. Takao, N. Terayama, K. Ono
- Organizer
  The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, 5B-AM-O2
- Year and Date
  2014-02-05
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Fin 型トランジスタ加工におけるプラズマ誘起Si基板ダメージ形成モデル2014
- Author(s)
  江利口浩二
- Organizer
  第168回研究会(主催 : 応用物理学会シリコンテクノロジー分科会)
- Place of Presentation
  東京(東京大学)
- Year and Date
  2014-02-14
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] プラズマ誘起 Si 基板ダメージの熱処理回復過程の検討(1)2014
- Author(s)
  江利口浩二, 深沢正永, 鷹尾祥典, 辰巳哲也, 斧高一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] プラズマチャージングダメージによる MOSFET ランダムテレグラフノイズ(RTN)特性の変動2014
- Author(s)
  亀井政幸, 江利口浩二, 鷹尾祥典, 斧高一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Modeling as a powerful tool for understanding surface damage during plasma processing of materials2013
- Author(s)
  K. Eriguchi
- Organizer
  Plasma Etch and Strip in Microtechnology (PESM)
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2013-03-15
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique2013
- Author(s)
  M. Noma, K. Eriguchi, Y. Takao, N. Terayama, K. Ono
- Organizer
  Dry Process Symposium
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Effects of Plasma-Induced Si Damage Structures on Annealing Process Design-Gas Chemistry Impact2013
- Author(s)
  A. Matsuda, Y. Nakakubo, M. Fukasawa, Y. Takao, K. Eriguchi, T. Tatsumi, K. Ono
- Organizer
  AVS 60th International Symposium & Exhibition
- Place of Presentation
  Long Beach, USA
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Effects of Plasma-Induced Si Damage Structures on Annealing Process Design-Gas Chemistry Impact2013
- Author(s)
  A. Matsuda, Y. Nakakubo, M. Fukasawa, Y. Takao, K. Eriguchi, T. Tatsumi, K. Ono
- Organizer
  AVS 60th International Symposium & Exhibition
- Place of Presentation
  the Long Beach Convention Center, California, USA
- Year and Date
  2013-10-28
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Modeling as a powerful tool for understanding surface damage during plasma processing of materials2013
- Author(s)
  Koji Eriguchi
- Organizer
  Plasma Etch and Strip in Microelectronics
- Place of Presentation
  ベルギー，ルーベン
- Invited
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency2013
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Int. Conf. on Integrated Circuit Design & Technol.
- Place of Presentation
  Pavia, Italy
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Molecular dynamics simulation of plasma-induced Si substrate damage : Latent defect structures and bias-frequency effects2013
- Author(s)
  K. Eriguchi, A. Matsuda, Y. Takao, K. Ono
- Organizer
  The 66th Annual Gaseous Electronics Conference (GEC)
- Place of Presentation
  Princeton, New Jersey
- Year and Date
  2013-10-03
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Molecular dynamics simulation of plasma-induced Si substrate damage: Latent defect structures and bias-frequency effects2013
- Author(s)
  K. Eriguchi, A. Matsuda, Y. Takao, and K. Ono
- Organizer
  The 66th Annual Gaseous Electronics Conference
- Place of Presentation
  Princeton, USA
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Surface Roughening during Si Etching in Inductively Coupled Cl2 Plasmas: Experimental Investigations and a Comparison with Numerical Simulations2013
- Author(s)
  (H. Tsuda), N. Nakazaki, D. Fukushima, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  6th International Conference on Plasma-Nanotechnology Science (IC-PLANTS2013)
- Place of Presentation
  Gero, Gifu, Japan
- Year and Date
  2013-02-03
- Invited
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] micro-Photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage2013
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Dry Process Symposium
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Formation Mechanisms of Nanoscale Surface Roughness and Rippling during Plasma Etching and Sputtering of Si under Oblique Ion Incidence2012
- Author(s)
  (H. Tsuda), Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  American Vacuum Society 59th International Symposium (AVS2012)
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2012-10-30
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] High-k MOSFET performance degradation by plasma process-induced charging damage2012
- Author(s)
  Koji Eriguchi
- Organizer
  IEEE International Integrated Reliability Workshop
- Place of Presentation
  米国，カリフォルニア州レイクタホ
- Invited
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Optimization problems for plasma-induced damage - A concept for plasma-induced damage design2012
- Author(s)
  Koji Eriguchi
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol.
- Place of Presentation
  米国, テキサス州オースチン
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] High-k MOSFET performance degradation by plasma process-induced charging damage2012
- Author(s)
  K. Eriguchi
- Organizer
  IEEE International Integrated Reliability Workshop (IIRW)
- Place of Presentation
  Fallen Leaf Lake, USA
- Year and Date
  2012-10-14
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] ナノスケールデバイスのためのプラズマプロセス2012
- Author(s)
  江利口浩二
- Organizer
  プラズマ・核融合学会第24回専門講習会『ナノテク時代のプラズマ技術』
- Place of Presentation
  京都工芸繊維大学
- Year and Date
  2012-01-12
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Hを含むプラズマによるSi基板ダメージ構造とその回復プロセスについての検討2012
- Author(s)
  中久保義則, 松田朝彦, 深沢正永, 鷹尾祥典, 江利口浩二, 辰巳哲也, 斧高一
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Molecular Dynamics Analysis of Si Etching with Cl and Br Beams: Ion Incident Angle and Neutral Radical Flux Dependence2012
- Author(s)
  (N. Nakazaki), H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  American Vacuum Society 59th International Symposium (AVS2012)
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2012-10-30
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] 温度制御型フォトリフレクタンス分光法を用いたプラズマ誘起Si 基板ダメージの定量化とそのプロファイル解析2012
- Author(s)
  松田朝彦, 中久保義則, 鷹尾祥典, 江利口浩二, 斧高一
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(IEICE-SDM)
- Place of Presentation
  東北大学
- Year and Date
  2012-10-25
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Improvement in the Evaluation Technique for Plasma-Etch Si Damage using Photoreflectance Spectroscopy with Temperature Control2011
- Author(s)
  A.Matsuda, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  AVS 58th International Symposium & Exhibition
- Place of Presentation
  USA
- Year and Date
  2011-11-03
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Modeling of Parameter Fluctuation Induced by Plasma Process Damage in Metal-Oxide-Semiconductor Field-Effest Transistors2011
- Author(s)
  K.Eriguchi
- Organizer
  19th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor
- Place of Presentation
  Korea
- Year and Date
  2011-06-29
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Modeling of Parameter Fluctuation Induced by Plasma Process Damage in Metal-Oxide-Semiconductor Field-Effect Transistors2011
- Author(s)
  K. Eriguchi
- Organizer
  19th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Place of Presentation
  Daejeon, Korea
- Year and Date
  2011-06-29
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] 物理的プラズマダメージによるMOSFETオフリーク電流とそのバラツキの増大モデル2011
- Author(s)
  江利口浩二, 鷹尾祥典, 斧高一
- Organizer
  第16回研究会ゲートスタック研究会-材料・プロセス・評価の物理- 招待講演
- Place of Presentation
  東京工業大学
- Year and Date
  2011-01-21
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] プラズマ誘起ダメージ2011
- Author(s)
  江利口浩二
- Organizer
  Plasma Conference 2011
- Place of Presentation
  金沢
- Year and Date
  2011-11-24
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] 物理的プラズマダメージによるMOSFETバラツキ増大予測のための包括モデル2011
- Author(s)
  江利口浩二, 中久保義則, 松田朝彦, 鷹尾祥典, 斧高一
- Organizer
  シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  東北大学
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He- and Ar-Plasma-Damaged Si Substrate2011
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Proc. 33rd International Symposium on Dry Process (DPS 2011)
- Place of Presentation
  Kyoto
- Year and Date
  2011-11-11
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] A New Prediction Model for Effects of Plasma-Induced Damage on Parameter Variations in Advanced LSIs2011
- Author(s)
  K.Eriguchi, Y.Takao, K.Ono
- Organizer
  Proc.Int.Conf.on Integrated Circuit Design & Technol.(ICICDT)
- Place of Presentation
  Taiwan
- Year and Date
  2011-05-03
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] 電気的手法を用いた物理的Si基板ダメージのプラズマプロセス依存性の検討2011
- Author(s)
  中久保義則, 江利口浩二, 松田朝彦, 鷹尾祥典, 斧高一
- Organizer
  シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  東北大学
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] A New Prediction Model for Effects of Plasma-Induced Damage on Parameter Variations in Advanced LSIs2011
- Author(s)
  K. Eriguchi, Y. Takao, K.Ono
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2011-05-04
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He-and Ar-Plasma-Damaged Si Substrate2011
- Author(s)
  A.Matsuda, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Proc.33rd International Symposium on Dry Process
- Place of Presentation
  Kyoto
- Year and Date
  2011-11-11
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Siエッチングダメージのモデリング2011
- Author(s)
  江利口浩二
- Organizer
  応用物理学会、シリコンテクノロジー分科会招待講演
- Place of Presentation
  東京大学
- Year and Date
  2011-02-18
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Modeling the Effects of Plasma-Induced Physical Damage on Subthreshold Leakage Current in Scaled MOSFETs2010
- Author(s)
  K.Eriguchi, M.Kamei, Y.Takao, K.Ono
- Organizer
  IEEE Int.Conf.on Integrated Circuit Design&Technol
- Place of Presentation
  フランス/グルノーブル
- Year and Date
  2010-06-03
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar MOSFETs and the optimization strategies2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Organizer
  Symp.Dry Process
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Modeling the Effects of Plasma-Induced Physical Damage on Subthreshold Leakage Current in Scaled MOSFETs2010
- Author(s)
  K.Eriguchi, M.Kamei, Y.Takao, K.Ono
- Organizer
  Int.Conf.on Integrated Circuit Design & Technology
- Place of Presentation
  フランス/グルノーブル
- Year and Date
  2010-06-03
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Modeling of Plasma-Induced Damage and Its Impacts on Parameter Variations in Advanced Electronic Devices2010
- Author(s)
  江利口浩二
- Organizer
  AVS 57th International Symposium&Exhibition 招待講演
- Place of Presentation
  米国/アルバカーキー
- Year and Date
  2010-10-20
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy2010
- Author(s)
  A.Matsuda, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Symp.Dry Process 2010
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] プラズマによるSi基板ダメージとMOSデバイス特性劣化の相関モデル2010
- Author(s)
  江利口浩二, 中久保義則, 松田朝彦, 鷹尾祥典, 斧高一
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Modeling of Plasma-Induced Damage and Its Impacts on Parameter Variations in Advanced Electronic Devices2010
- Author(s)
  K.Eriguchi
- Organizer
  AVS 57th International Symposium & Exhibition
- Place of Presentation
  米国/アルバカーキー(招待講演)
- Year and Date
  2010-10-20
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] A Model for Effects of RF Bias Frequency and Waveform on Si Damage d-Layer Formation during Plasma Etching2010
- Author(s)
  K.Eriguchi, Y.Takao, K.Ono
- Organizer
  Proc.63rd Gaseous Electronics Conference (GEC) and 7th International Conference on Reactive Plasmas (ICRP)
- Place of Presentation
  フランス/パリ
- Year and Date
  2010-10-06
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy2010
- Author(s)
  A.Matsuda, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Symp. Dry Process
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar MOSFETs and the optimization strategies2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Organizer
  Symp.Dry Process 2010
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] A Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching2010
- Author(s)
  K.Eriguchi, Y.Takao, K.Ono
- Organizer
  Proc.63rd Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
- Place of Presentation
  フランス/パリ
- Year and Date
  2010-10-06
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Effects of Plasma Process Fluctuation on Variation in MOS Device Parameters2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Organizer
  The 3rd International Conference on Plasma-Nanotechnology&Science 2010
- Place of Presentation
  名城大学
- Year and Date
  2010-03-11
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites2010
- Author(s)
  Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Symp.Dry Process
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-11
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Effects of Plasma Process Fluctuation on Variation in MOS Device Parameters2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Organizer
  The 3rd International Conference on Plasma-Nanotechnology & Science, 2010
- Place of Presentation
  名城大学
- Year and Date
  2010-03-11
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites2010
- Author(s)
  Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Symp.Dry Process 2010
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] プラズマプロセスにおけるSi基板ダメージ層形成モデルの提案2010
- Author(s)
  江利口浩二, 中久保義則, 松田朝彦, 鷹尾祥典, 斧高一
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs2009
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Organizer
  Proceedings of 31st International Symposium on Dry Process, 2009, pp. 267-268
- Place of Presentation
  韓国釜山
- Year and Date
  2009-09-25
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects2009
- Author(s)
  A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis2009
- Author(s)
  A.Matsuda, Y.Nakakubo, R.Ogino, H.Ohta, K.Eriguchi, K.Ono
- Organizer
  IEEE Int.Conf.on Integrated Circuit Design&Technol
- Place of Presentation
  米国/オースチン
- Year and Date
  2009-05-19
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Effects of O_2 addition on Si substrate surface damage exposed to Ar plasma2009
- Author(s)
  Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  第22回プラズマ材料科学シンポジウム
- Place of Presentation
  東京大学山上会館
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs2009
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Organizer
  Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs2009
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Organizer
  Symp.Dry Process, 2009
- Place of Presentation
  韓国/釜山
- Year and Date
  2009-09-25
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Detailed Analysis of Plasma-Damaged Layer and Its Significance in Si Surface Structures by Spectroscopic Ellipsometry and Molecular Dynamics Simulations2009
- Author(s)
  A. Matsuda, R. Ogino, Y. Nakakubo, H. Ohta., K. Eriguchi, K. Ono
- Organizer
  プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会
- Place of Presentation
  名古屋大学豊田講堂・シンポシオン
- Year and Date
  2009-02-04
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis2009
- Author(s)
  A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  第22回プラズマ材料科学シンポジウム
- Place of Presentation
  東京大学山上会館
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Identification of Carrier Trapping Defect Sites in Plasma-Exposed Si Surface by Optical and Electrical Techniques2009
- Author(s)
  Y. Nakakubo, A. Mtsuda, R. Ogino, M. Kamei, K. Eriguchi, K. Ono
- Organizer
  プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会
- Place of Presentation
  名古屋大学豊田講堂・シンポシオン
- Year and Date
  2009-02-04
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Si表面のプラズマダメージの精確な解析における界面層の重要性2009
- Author(s)
  松田朝彦, 荻野力, 中久保義則, 太田裕朗, 江利口浩二, 斧高一
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Bias frequency dependence of pn junction chargin damage induced by plasma processing2009
- Author(s)
  M.Kamei, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  第22回プラズマ材料科学シンポジウム
- Place of Presentation
  東京大学山上会館
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Effects of O2 addition on Si substrate surface damage exposed to Arplasma2009
- Author(s)
  Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  第22回プラズマ材料科学シンポジウム
- Place of Presentation
  東京大学山上会館
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Si表面のプラズマダメージの精確な解析における界面層の重要性2009
- Author(s)
  松田朝彦, 荻野力, 中久保義則, 太田裕朗, 江利口浩二, 斧高一
- Organizer
  ・2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis2009
- Author(s)
  A.Matsuda, Y.Nakakubo, R.Ogino, H.Ohta, K.Eriguchi, K.
- Organizer
  International Conference on IC Design and Technology (ICICDT 2009)
- Place of Presentation
  米国テキサス州
- Year and Date
  2009-05-19
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] 02添加ArプラズマによるSi基板表面層内誘起欠陥の電気的解析2009
- Author(s)
  中久保義則, 松田朝彦, 荻野力, 上田義法, 江利口浩二, 斧高一
- Organizer
  ・2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] O_2添加ArプラズマによるSi基板表面層内誘起欠陥の電気的解析2009
- Author(s)
  中久保義則, 松田朝彦, 荻野力, 上田義法, 江利口浩二, 斧高一
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Identification of Carrier Trapping Defect Sites in Plasma-Exposed Si Surface by Optical and Electrical Techniques2009
- Author(s)
  Y.Nakakubo, A.Matsuda, R.Ogino, M.Kamei, K.Eriguchi, K.Ono
- Organizer
  プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会
- Place of Presentation
  名古屋大学豊田講堂・シンポジオン
- Year and Date
  2009-02-04
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis2009
- Author(s)
  A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  第22回プラズマ材料科学シンポジウム
- Place of Presentation
  東京大学山上会
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Surface roughening during Si etching in inductively coupled Cl2 plasmas
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Molecular Dynamics Analysis of Si Etching in HBr-based Plasmas: Ion Incident Energy and Angle Dependence
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  AVS 60th International Symposium (AVS2013)
- Place of Presentation
  Long Beach, CA, USA
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Impacts of Plasma-induced Charging Damage on Random Telegraph Noise (RTN) Behaviors in MOSFETs with SiO 2 and High-k Gate Dielectrics
- Author(s)
  M. Kamei, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits - A model prediction of damage in three dimensional structures
- Author(s)
  K. Eriguchi
- Organizer
  67th Annual Gaseous Electronics Conference
- Place of Presentation
  Raleigh, NC, USA
- Year and Date
  2014-11-03 – 2014-11-07
- Invited
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Low-temperature microwave repairing for plasma-induced local defect structures near Si substrate surface
- Author(s)
  T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono
- Organizer
  36th International Symposium on Dry Process (DPS)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Molecular dynamics simulation of etch by-product ion incidence during Si etching in Cl-based plasmas
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  26th Symposium on Plasma Science & Materials (SPSM26)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] A New Aspect of Plasma‐Induced Physical Damage in Three‐Dimensional Scaled Structures
- Author(s)
  K. Eriguchi, Y. Takao, K. Ono
- Organizer
  IEEE Int. Conf. on Integrated Circuit Design & Technol. (ICICDT)
- Place of Presentation
  Austin, TX, USA
- Year and Date
  2014-05-29 – 2014-05-30
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] μ-Photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] A model for plasma-induced latent defects in three-dimensional structures and its application to parameter variation analysis of FinFETs
- Author(s)
  K. Eriguchi, K. Ono
- Organizer
  36th International Symposium on Dry Process (DPS)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Plasma-Induced Damage in 3D Structures behind Device Scaling
- Author(s)
  K. Eriguchi, Y. Takao, K. Ono
- Organizer
  Plasma Etch and Strip in Microtechnology (PESM)
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-05-11 – 2014-05-12
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Effects of ion energy on surface and mechanical properties of BN films formed by a reactive plasma-assisted coating method
- Author(s)
  M. Noma, K. Eriguchi, S. Hasegawa, M. Yamashita, K. Ono
- Organizer
  36th International Symposium on Dry Process (DPS)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT)
- Place of Presentation
  Italy
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Comprehensive Evidence-based Guidelines for Annealing Plasma- damaged Si Substrates -Impact of plasma process conditions-
- Author(s)
  M. Fukasawa, A. Matsuda, Y. Nakakubo, S. Sugimura, K. Nagahata, Y. Takao, K. Eriguchi, K. Ono, T. Tatsumi
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Optimization problems for plasma-induced damage - A concept for plasma-induced damage design
- Author(s)
  K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, Y. Takao, K. Ono
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT)
- Place of Presentation
  Austin, Texas
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Scenario of plasma-induced physical damage in FinFET-the effects of "straggling" of incident ions by a range theory-
- Author(s)
  K. Eriguchi, A. Matsuda, Y. Takao, K. Ono
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Experimental evidence of layout-dependent low-k damage during plasma processing - Role of "near-field" in damage creation -
- Author(s)
  T. Ikeda, K. Eriguchi, A. Tanihara, S. Kasai, K. Ono
- Organizer
  36th International Symposium on Dry Process (DPS)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  66th Annual Gaseous Electronics Conference (GEC2013)
- Place of Presentation
  Princeton, NJ, USA
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique
- Author(s)
  M. Noma, K. Eriguchi, Y. Takao, N. Terayama, K. Ono
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Three-Dimensional Parameter Mapping of Annealing Process for HBr/O_2 -Plasma- Induced Damages in Si Substrates
- Author(s)
  A. Matsuda, Y. Nakakubo, M. Fukasawa, Y. Takao, T. Tatsumi, K. Eriguchi, K. Ono
- Organizer
  Proc. 34th International Symposium on Dry Process (DPS)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Recovery of Plasma-Induced Si Substrate Damage Using Atmospheric Thermal Plasma
- Author(s)
  T. Okumura, K. Eriguchi, M. Saitoh, H. Kawaura
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Molecular dynamics analysis of Si etching in HBr-based Plasmas: Effects of neutral radicals
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  35th International Symposium on Dry Process (DPS 2013)
- Place of Presentation
  Jeju, South Korea
- Data Source
  KAKENHI-PLANNED-21110008

1. ONO Kouichi (30311731)

# of Collaborated Projects: 9 results

# of Collaborated Products: 159 results
2. TAKAO Yoshinori (80552661)

# of Collaborated Projects: 3 results

# of Collaborated Products: 58 results
3. Tatsumi Kazuya (90372854)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. 高橋和生 (50335189)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
5. 長谷川繁彦 (50189528)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
6. NOMA MASAO

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
7. WEI ZHIQIANG

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
8. 太田裕朗

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

Eriguchi Koji 江利口 浩二

ERIGUCHI Koji 江利口 浩二

Research Projects

Research Products

Co-Researchers

超高密度反応性プラズマ法による窒化ホウ素ナノ結晶集合体構造の信頼性物理の研究Principal Investigator

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Effects of dielectric loss mechanisms at electron trapping sites on damage recovery and reliability improvement in thin filmsPrincipal Investigator

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Design of sp-bonds in functional BN films by arc discharge with independent parameter controlPrincipal Investigator

Principal Investigator

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Reliability evaluation and characteristic prediction in microfluidic devices applying stochastic process of random fluctuation problem

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Study of defect generation processes in nano-scale devices and the deign methodology based on stochastic theoryPrincipal Investigator

Principal Investigator

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Plasma-Induced Formation of Nanoscale Ripple Structures on Surfaces

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Study of structure modification of boron nitride films by plasma exposure - the effect of ion energy distribution functionPrincipal Investigator

Principal Investigator

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Study of plasma-solid surface interaction control for future organic devices with the optimized dielectric constantsPrincipal Investigator

Principal Investigator

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Study of defect-related dielectric function change and the process optimiztion framework for ultimately low power systemsPrincipal Investigator

Principal Investigator

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Plasma-Surface Interactions during Plasma Etching for Next-Generation Nanoscale Device Fabrication

Principal Investigator

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Plasma-Surface Interactions for Nanometer-scale Plasma Etching Processes

Principal Investigator

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Plasma process design for material surface treatment in the nano-scale regime utilizing dielectric-constant analysis techniquesPrincipal Investigator

Principal Investigator

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Research Institution

マイクロプラズマスラスタの研究開発:高温反応場と高速流れ場の競合現象の解明と制御

Principal Investigator

Project Period (FY)

Eriguchi Koji 江利口浩二

ERIGUCHI Koji 江利口浩二

[Book] プラズマプロセス技術 (第4章ナノエッチング技術, 分担執筆)2017

[Book] 「2007半導体テクノロジー大全」第4編第4章第5節"高誘電体/電極材料エッチング技術"2007

[Book] 2007半導体テクノロジー大全(第4編第4章第5節"高誘電体/電極材料エッチング技術")2007