Shiojima Kenji 塩島謙次

… Alternative Names

SHIOJIMA Kenji 塩島謙次

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Researcher Number	70432151
Other IDs
Affiliation (Current)	2025: 福井大学, 学術研究院工学系部門, 教授
Affiliation (based on the past Project Information) *help	2017 – 2024: 福井大学, 学術研究院工学系部門, 教授 2016: 福井大学, 学術研究院工学系部門, 准教授 2015: 福井大学, 工学研究科(研究院), 准教授 2012 – 2015: 福井大学, 工学(系)研究科(研究院), 准教授 2009 – 2011: University of Fukui, 大学院・工学研究科, 准教授 … More 2007 – 2008: 福井大学, 工学研究科, 准教授 2007: University of Fukui, 大学院・工学研究科, 准教授 2006: 福井大学, 大学院工学研究科, 助教授 Less
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials / Electron device/Electronic equipment Except Principal Investigator Basic Section 30010:Crystal engineering-related / Crystal engineering / Physical chemistry / Electronic materials/Electric materials
Keywords	Principal Investigator 界面顕微光応答法 / ワイドバンドギャップ半導体 / 2次元評価 / ショットキー電極 / GaN / 電極 / 金属／半導体界面 / SiC / ２次元評価 / グラフェン … More / 電子デバイス / ジャンクションバリアショットキーダイオード / 電界集中 / 金属/半導体界面 / 信頼性評価 / 表面損傷 / α-Ga2O3 / 耐圧評価 / IGZO / 欠陥評価 / ショットキー接触 / 金属ー半導体界面 / 二次元評価 / 窒化物半導体 / 窒化ガリウム / 表面保護 / 熱的安定性 / 炭素 / 半導体 … More Except Principal Investigator 析出物 / テラヘルツ波 / Bi系半導体混晶 / Bi系混晶半導体 / 凝集体 / TEM / 欠陥評価 / THz波受送信素子 / 結晶欠陥 / 低温成長 / MBE / Ｂi系混晶半導体 / 電子顕微鏡 / 格子欠陥 / 結晶成長 / テラヘルツ素子 / 結晶評価 / 透過電子顕微鏡 / 欠陥 / GaAsBi / InGaAs / 混晶半導体 / アンテナ / 光伝導 / テラヘルツ分光 / 遠赤外 / 導波路 / テラヘルツ / A1N単結晶薄膜 / 固相C60薄膜 / AlN単結晶薄膜 / 電界効果トランジスタ / SiC基板 / 炭素系デバイス / グラフェン / 固相C_<60>薄膜 / 電気・電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) Less

高電圧印加界面顕微光応答法によるパワー素子用電極エッジの電界集中の2次元的解明Principal Investigator
- Principal Investigator
  
  塩島謙次
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  University of Fukui
Analysis of ohmic metal/semiconductor interfaces by low-temperature SIPMPrincipal Investigator
- Principal Investigator
  
  Shiojima Kenji
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  University of Fukui
Characterization and control of defects in low-temperature-grown Bi-based compound semiconductors for novel terahertz wave emitters and detectors
- Principal Investigator
  
  Ueda Osamu
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Meiji University
Two-dimensional characterization of an initial stage of the degradation of metal/semiconductor interfaces by using scanning internal photoemission microscopy with near-ultra-violet lightPrincipal Investigator
- Principal Investigator
  
  Shiojima Kenji
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  University of Fukui
Evaluation and control of defects in LTG GaAs-related alloy semiconductors for photoconductive antenna of THz wave excited by near infra-red light
- Principal Investigator
  
  Ueda Osamu
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Meiji University
  Kanazawa Institute of Technology
Two-dimensional characterization of degradation mechanism in metal/wide-bandgap semiconductor contacts by scanning internal photoemission microscopyPrincipal Investigator
- Principal Investigator
  
  Shiojima Kenji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Fukui
Investigation of terahertz time-domain spectroscopy using terahertz superfucusing effect
- Principal Investigator
  
  Yamamoto Kohji
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Physical chemistry
- Research Institution
  University of Fukui
2-dimentional mapping of graphene-inserted metal contactsPrincipal Investigator
- Principal Investigator
  
  SHIOJIMA Kenji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Fukui
Surface passivation of GaN by graphene layersPrincipal Investigator
- Principal Investigator
  
  SHIOJIMA Kenji
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Fukui
Basic Research for Carbon Electronics Devices using Solid C_<60> and/or Graphene
- Principal Investigator
  
  HASHIMOTO Akihiro
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Fukui
金属を用いない高耐熱電極に関する研究Principal Investigator
- Principal Investigator
  
  塩島謙次
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Young Scientists (Start-up)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Fukui

[Book] Control of Semiconductor Interfaces2020
- Author(s)
  Kenji Shiojima, Katsuyoshi Washio, Seiichi Miyazaki, Hiroo Omi, Giuliana Impellizzeri
- Publisher
  Materials Science in Semiconductor Processing
- Data Source
  KAKENHI-PROJECT-18K04228
[Book] Semiconductor Process Integration 112019
- Author(s)
  J. Murota, C. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima
- Total Pages
  233
- Publisher
  The Electrochemical Society
- ISBN
  9781623325824
- Data Source
  KAKENHI-PROJECT-17K05044
[Book] Semiconductor Process Integration 112019
- Author(s)
  J. Murota, C. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima, Y. Cao
- Total Pages
  233
- Publisher
  The Electrochemical Society, 65 South Main Street, New Jersey, USA
- ISBN
  9781623325824
- Data Source
  KAKENHI-PROJECT-18K04228
[Book] Semiconductor Process Integration 102017
- Author(s)
  J. Murota, C. L. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima, P. Chin,
- Total Pages
  309
- Publisher
  The Electrochemical Society, 65 South Main Street, New Jersey, USA
- ISBN
  9781623324643
- Data Source
  KAKENHI-PROJECT-15K05981
[Book] 電気電子材料2016
- Author(s)
  伊藤利道　編著、吉門進三、尾崎雅則、鷲尾勝由、塩島謙次、斗内政吉
- Total Pages
  239
- Publisher
  オーム社
- Data Source
  KAKENHI-PROJECT-15K05981
[Book] Proceedings of the 8th International Conference on Silicon Epitaxy and Heterostructure (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)2014
- Author(s)
  Seiichi Miyazaki, Matty R. Caymax, Siegfried Mantl, Masanobu Miyao, Junichi Murota, Toshio Ogino, Tsugunori Okumura, Kenji Shiojima, James C. Sturm, Shinichi Takagi, Akira Toriumi, Kastuyoshi Washio, Ya-Hong Xie, Shigeaki Zaima
- Total Pages
  393
- Publisher
  Elsevier
- Data Source
  KAKENHI-PROJECT-24560369
[Book] 2014 GaNパワー/高周波デバイスの最新動向★徹底解説2014
- Author(s)
  塩島謙次
- Total Pages
  66
- Publisher
  （株）電子ジャーナル
- Data Source
  KAKENHI-PROJECT-24560369
[Book] 2013化合物半導体技術大全CD-ROM版2013
- Author(s)
  木浦成俊編集、塩島謙次他32名分著
- Total Pages
  347
- Publisher
  株式会社電子ジャーナル
- Data Source
  KAKENHI-PROJECT-24560369
[Book] 化合物半導体大全2009
- Author(s)
  木浦成俊,塩島謙次, 他
- Publisher
  株式会社電子ジャーナル
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] Two‐Dimensional Characterization of Au/Ni/Thin Heavily‐Mg‐Doped p‐/n‐GaN Structure under Applied Voltage by Scanning Internal Photoemission Microscopy2024
- Author(s)
  Imabayashi Hiroki、Yoshimura Haruto、Horikiri Fumimasa、Narita Yoshinobu、Fujikura Hajime、Ohta Hiroshi、Mishima Tomoyoshi、Shiojima Kenji
- Journal Title
  
  physica status solidi (b)
  
  Volume: - Issue: 11
- DOI
  10.1002/pssb.202400033
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04135
[Journal Article] Photoelectrical characterization of heavily doped p-SiC Schottky contacts2024
- Author(s)
  Imabayashi Hiroki、Sawazaki Hitose、Yoshimura Haruto、Kato Masashi、Shiojima Kenji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 4 Pages: 04SP71-04SP71
- DOI
  10.35848/1347-4065/ad32e0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04135
[Journal Article] (Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days2023
- Author(s)
  Shiojima Kenji
- Journal Title
  
  ECS Transactions
  
  Volume: 112 Issue: 1 Pages: 89-107
- DOI
  10.1149/11201.0089ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04135, KAKENHI-PROJECT-21K04910
[Journal Article] Mapping of ultra-high-pressure annealed n-GaN Schottky contacts using scanning internal photoemission microscopy2023
- Author(s)
  Imabayashi Hiroki、Shiojima Kenji、Kachi Tetsu
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 162 Pages: 107536-107536
- DOI
  10.1016/j.mssp.2023.107536
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04135, KAKENHI-PROJECT-21K04910
[Journal Article] Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy2022
- Author(s)
  Shiojima Kenji、Kawasumi Yuto、Yasui Yuto、Kashiwagi Yukiyasu、Tamai Toshiyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 8 Pages: 086506-086506
- DOI
  10.35848/1347-4065/ac7bc5
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04135, KAKENHI-PROJECT-21K04910
[Journal Article] Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy?difference in electrolytes2022
- Author(s)
  Shiojima Kenji、Matsuda Ryo、Horikiri Fumimasa、Narita Yoshinobu、Fukuhara Noboru、Mishima Tomoyoshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SC Pages: SC1059-SC1059
- DOI
  10.35848/1347-4065/ac4c6e
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04135, KAKENHI-PROJECT-21K04910
[Journal Article] Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy2022
- Author(s)
  Imabayashi Hiroki、Yasui Yuto、Horikiri Fumimasa、Narita Yoshinobu、Fukuhara Noboru、Mishima Tomoyoshi、Shiojima Kenji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SA Pages: SA1012-SA1012
- DOI
  10.35848/1347-4065/ac8d6f
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04135, KAKENHI-PROJECT-21K04910
[Journal Article] Effect of Surface Treatment in Au/Ni/ n-GaN Schottky Contacts Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Substrates2022
- Author(s)
  SHIOJIMA Kenji、IMABAYASHI Hiroki、MISHIMA Tomoyoshi
- Journal Title
  
  Journal of the Society of Materials Science, Japan
  
  Volume: 71 Issue: 10 Pages: 819-823
- DOI
  10.2472/jsms.71.819
- ISSN
  0514-5163, 1880-7488
- Year and Date
  2022-10-15
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04135, KAKENHI-PROJECT-21K04910
[Journal Article] Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy?comparison between n- and p-type GaN samples2021
- Author(s)
  Matsuda Ryo、Horikiri Fumimasa、Narita Yoshinobu、Yoshida Takehiro、Fukuhara Noboru、Mishima Tomoyoshi、Shiojima Kenji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBD12-SBBD12
- DOI
  10.35848/1347-4065/abdf21
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Mapping of n-GaN Schottky contacts formed on facet-growth substrates using near-ultraviolet scanning internal photoemission microscopy2021
- Author(s)
  Shiojima Kenji、Maeda Masataka、Kurihara Kaori
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 36
- DOI
  10.1088/1361-6641/abdd09
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes2021
- Author(s)
  Shiojima Kenji、Tanaka Ryo、Takashima Shinya、Ueno Katsunori、Edo Masaharu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 5 Pages: 056503-056503
- DOI
  10.35848/1347-4065/abf5ab
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04135, KAKENHI-PROJECT-21K04910
[Journal Article] (Invited) Two-Dimensional Characterization of Wide-Bandgap Materials and Contact Interfaces by Using Scanning Internal Photoemission Microscopy2021
- Author(s)
  Shiojima Kenji
- Journal Title
  
  ECS Transactions
  
  Volume: 104 Issue: 4 Pages: 69-82
- DOI
  10.1149/10404.0069ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04135, KAKENHI-PROJECT-21K04910
[Journal Article] Uniformity characterization of SiC, GaN, and α-Ga<sub>2</sub>O<sub>3</sub> Schottky contacts using scanning internal photoemission microscopy2021
- Author(s)
  Shiojima Kenji、Kawasumi Yuto、Horikiri Fumimasa、Narita Yoshinobu、Fukuhara Noboru、Mishima Tomoyoshi、Shinohe Takashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 10 Pages: 108003-108003
- DOI
  10.35848/1347-4065/ac2917
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04135, KAKENHI-PROJECT-21K04910
[Journal Article] Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates2020
- Author(s)
  Shiojima Kenji、Horikiri Fumimasa、Narita Yoshinobu、Yoshida Takehiro、Mishima Tomoyoshi
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 4
- DOI
  10.1002/pssb.201900561
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Mg-Doping-Concentration Dependence for Ni/p-GaN Schottky Contacts2020
- Author(s)
  SHIOJIMA Kenji
- Journal Title
  
  Journal of the Society of Materials Science, Japan
  
  Volume: 69 Issue: 10 Pages: 717-720
- DOI
  10.2472/jsms.69.717
- NAID
  130007927956
- ISSN
  0514-5163, 1880-7488
- Year and Date
  2020-10-15
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy2020
- Author(s)
  Shiojima Kenji、Kato Masashi
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 118 Pages: 105182-105182
- DOI
  10.1016/j.mssp.2020.105182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Perspective of Semiconductor Technologies Contributed to the IoT Society2020
- Author(s)
  SHIOJIMA Kenji
- Journal Title
  
  Journal of the Society of Materials Science, Japan
  
  Volume: 69 Issue: 11 Pages: 837-842
- DOI
  10.2472/jsms.69.837
- NAID
  130007941338
- ISSN
  0514-5163, 1880-7488
- Year and Date
  2020-11-15
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Mapping of damage induced by neutral beam etching on GaN surfaces using scanning internal photoemission microscopy2019
- Author(s)
  Shiojima Kenji、Suemitsu Tetsuya、Ozaki Takuya、Samukawa Seiji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCD13-SCCD13
- DOI
  10.7567/1347-4065/ab106d
- NAID
  210000156134
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage2019
- Author(s)
  Shiojima Kenji、Maeda Masataka、Mishima Tomoyoshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCD02-SCCD02
- DOI
  10.7567/1347-4065/ab0f1a
- NAID
  210000155768
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Mapping of Metal/Semiconductor and Semiconductor/Semiconductor Interfaces Using Scanning Internal Photoemission Microscopy2019
- Author(s)
  Kenji Shiojima
- Journal Title
  
  2019 IEEE CPMT Symposium Japan (ICSJ)
  
  Volume: - Pages: 169-172
- NAID
  40022094193
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05044
[Journal Article] Mapping the interfacial reaction of α-Ga2O3 Schottky contacts through scanning internal photoemission microscopy2019
- Author(s)
  Shiojima Kenji、Kambara Hitoshi、Matsuda Tokiyoshi、Shinohe Takashi
- Journal Title
  
  Thin Solid Films
  
  Volume: 685 Pages: 17-25
- DOI
  10.1016/j.tsf.2019.05.063
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Mapping of Metal/Semiconductor and Semiconductor/Semiconductor Interfaces Using Scanning Internal Photoemission Microscopy2019
- Author(s)
  Kenji Shiojima
- Journal Title
  
  2019 IEEE CPMT Symposium Japan (ICSJ)
  
  Volume: - Pages: 169-172
- NAID
  40022094193
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Mapping of a Ni/SiN x /n-SiC structure using scanning internal photoemission microscopy2019
- Author(s)
  Shiojima Kenji、Hashizume Takanori、Sato Masaru、Takeyama Mayumi B.
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SB Pages: SBBC02-SBBC02
- DOI
  10.7567/1347-4065/aafd99
- NAID
  210000135392
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K05044, KAKENHI-PROJECT-18K04228
[Journal Article] Defect observations of Ni/AlGaN/GaN Schottky contacts on Si substrates using scanning internal photoemission microscopy2018
- Author(s)
  Kenji Shiojima, Hiroaki Konishi, Hiroyoshi Imadate, Yuya Yamaoka, Kou Matsumoto, and Takashi Egawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FG07-04FG07
- DOI
  10.7567/jjap.57.04fg07
- NAID
  210000148932
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K05981
[Journal Article] Observations of inhomogeneity of 3C-SiC layers grown on 6H-SiC substrates by using scanning internal photoemission microscopy2018
- Author(s)
  Kenji Shiojima, Naoki Mishina, Naoto Ichikawa, and Masashi Kato
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FR06-04FR06
- DOI
  10.7567/jjap.57.04fr06
- NAID
  210000149012
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K05981
[Journal Article] ニードル式マイクロディスペンサを用いたナノインク描画と焼結により形成された銀電極の各種基板上での電気的特性の評価2018
- Author(s)
  柏木行康、斉藤大志、長谷川貴洋、千金正也、塩島謙次、垣内宏之
- Journal Title
  
  第24回エレクトロニクスにおけるマイクロ接合・実装技術シンポジウム論文集
  
  Volume: 24 Pages: 159-162
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K05981
[Journal Article] Effect of surface treatment of printed Ag Schottky contacts on n-GaN epitaxial layers using Ag nanoink: Two dimensional characterization by scanning internal photoemission microscopy2018
- Author(s)
  Shiojima Kenji、Kashiwagi Yukiyasu、Shigemune Tasuku、Koizumi Atsushi、Kojima Takanori、Saitoh Masashi、Hasegawa Takahiro、Chigane Masaya、Fujiwara Yasufumi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 7S2 Pages: 07MA01-07MA01
- DOI
  10.7567/jjap.57.07ma01
- NAID
  210000149374
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K05044, KAKENHI-PROJECT-18K04228
[Journal Article] Two-dimensional characterization of 3C-SiC layers using scanning internal photoemission microscopy: Mapping of electrical characteristics and crystal quality in domain boundary regions2017
- Author(s)
  Kenji Shiojima, Masato Shingo, Naoto Ichikawa, and Masashi Kato
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 4S Pages: 04CR06-04CR06
- DOI
  10.7567/jjap.56.04cr06
- NAID
  210000147678
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PUBLICLY-15H00872, KAKENHI-PROJECT-15K05981
[Journal Article] Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy2017
- Author(s)
  Terano Akihisa、Imadate Hiroyoshi、Shiojima Kenji
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 70 Pages: 92-98
- DOI
  10.1016/j.mssp.2016.10.027
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05044, KAKENHI-PROJECT-15K05981
[Journal Article] Mapping of n-GaN Schottky Contacts With Wavy Surface Morphology Using Scanning Internal Photoemission Microscopy2017
- Author(s)
  Shiojima Kenji、Hashizume Takanori、Horikiri Fumimasa、Tanaka Takeshi、Mishma Tomoyoshi
- Journal Title
  
  physica status solidi (b)
  
  Volume: 255 Issue: 5 Pages: 1700480-1700480
- DOI
  10.1002/pssb.201700480
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05044, KAKENHI-PROJECT-15K05981
[Journal Article] Mapping of ion-implanted n -SiC schottky contacts using scanning internal photoemission microscopy2017
- Author(s)
  Murase Shingo、Mishima Tomoyoshi、Nakamura Tohru、Shiojima Kenji
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 70 Pages: 86-91
- DOI
  10.1016/j.mssp.2016.10.055
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05044, KAKENHI-PROJECT-15K05981
[Journal Article] Mapping of Au/a-IGZO Schottky contacts by using scanning internal photoemission microscopy2017
- Author(s)
  Kenji Shiojima and Masato Shingo
- Journal Title
  
  Phys. Status Solidi B
  
  Volume: 254 Issue: 2 Pages: 1600587-1600591
- DOI
  10.1002/pssb.201600587
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K05981
[Journal Article] Mapping of Si/SiC p-n heterojunctions using scanning internal photoemission microscopy2016
- Author(s)
  Masato Shingo, Jianbo Liang, Naoteru Shigekawa, Manabu Arai, and Kenji Shiojima
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP)
  
  Volume: 55 Issue: 4S Pages: 04ER15-04ER15
- DOI
  10.7567/jjap.55.04er15
- NAID
  210000146429
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K05981
[Journal Article] Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy2016
- Author(s)
  Kenji Shiojima, Shingo Murase, Shingo Yamamoto, Tomoyoshi Mishima, and Tohru Nakamura
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP)
  
  Volume: 55 Issue: 4S Pages: 04EG05-04EG05
- DOI
  10.7567/jjap.55.04eg05
- NAID
  210000146343
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K05981
[Journal Article] Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates2015
- Author(s)
  Takeshi Tanaka, Naoki Kaneda, Tomoyoshi Mishima, Yuhei Kihara, Toshichika Aoki, and Kenji Shiojima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4 Pages: 041002-041002
- DOI
  10.7567/jjap.54.041002
- NAID
  210000144901
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Mapping of inhomogeneity and thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy2015
- Author(s)
  Shingo Yamamoto, Yuhei Kihara and Kenji Shiojima
- Journal Title
  
  physica status solidi (b)
  
  Volume: 252 Issue: 5 Pages: 1017-1023
- DOI
  10.1002/pssb.201451579
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Nondestructive imaging of buried interfaces in SiC and GaN Schottky contacts using scanning internal photoemission microscopy2015
- Author(s)
  Kenji Shiojima, Shingo Yamamoto, Yuhei Kihara, Tomoyoshi Mishima
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 4 Pages: 046502-046502
- DOI
  10.7567/apex.8.046502
- NAID
  210000137483
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts2015
- Author(s)
  Moe Naganawa, Toshichika Aoki, Ji-Su Son, Hiroshi Amano and Kenji Shiojima
- Journal Title
  
  physica status solidi (b)
  
  Volume: 252 Issue: 5 Pages: 1024-1030
- DOI
  10.1002/pssb.201451581
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Electrical characteristics of low-Mg-doped p-AlGaN and p-InGaN Schottky contacts2015
- Author(s)
  Toshichika Aoki, Sachi Tachibana andKenji Shiojima
- Journal Title
  
  physica status solidi (b)
  
  Volume: 252 Issue: 5 Pages: 1031-1037
- DOI
  10.1002/pssb.201451590
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] High-temperature isothermal capacitance transient spectroscopy study on SiN deposition damages for low-Mg-doped p-GaN Schottky diodes2014
- Author(s)
  Kenji Shiojima, Hisashi Wakayama, Toshichika Aoki, Naoki Kaneda, Kazuki Nomoto, Tomoyoshi Mishim
- Journal Title
  
  Thin Solid Films
  
  Volume: 557 Pages: 268-271
- DOI
  10.1016/j.tsf.2013.11.031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Alternating current operation of low-Mg-doped p-GaN Schottky diodes2014
- Author(s)
  Toshichika Aoki, Naoki Kaneda, Tomoyoshi Mishima, Kenji Shiojima
- Journal Title
  
  Thin Solid Films
  
  Volume: 557 Pages: 258-261
- DOI
  10.1016/j.tsf.2013.08.039
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation2014
- Author(s)
  Takeshi Tanaka, Kenji Shiojima, Yohei Otoki, Yutaka Tokuda
- Journal Title
  
  Thin Solid Films
  
  Volume: 557 Pages: 207-211
- DOI
  10.1016/j.tsf.2013.10.077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Electrical Characteristics of Surface-Stoichiometry-Controlled p-GaN Schottky Contacts2013
- Author(s)
  Kenji Shiojima, Toshifumi Takahashi, Naoki Kaneda, Tomoyoshi Mishima, Takashi Kajiwara, and Satoru Tanaka
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP)
  
  Volume: 52 Issue: 1S Pages: 01AF05-01AF05
- DOI
  10.7567/jjap.52.01af05
- NAID
  210000141778
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts2013
- Author(s)
  Kenji Shiojima, Toshifumi Takahashi, Naoki Kaneda, Tomoyoshi Mishima, and Kazuki Nomoto
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP)
  
  Volume: 52
- NAID
  210000142713
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Evaluation of the initial stage of formation for Ti/Al ohmic contacts by using photoresponse method2013
- Author(s)
  Kenji Shiojima, Hideo Yokohama, Gako Araki
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP)
  
  Volume: 52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Evaluation of the Initial Stage of Formation of Ti/Al Ohmic Contacts Using Photoresponse Method2013
- Author(s)
  Kenji Shiojima, Hideo Yokohama, and Gako Araki
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP)
  
  Volume: 52 Issue: 8S Pages: 08JN06-08JN06
- DOI
  10.7567/jjap.52.08jn06
- NAID
  210000142752
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Effect of ICP Etching in p-type GaN Schottky Contacts2013
- Author(s)
  K. Shiojima, T. Takahashi, N. Kaneda, T. Mishima, and, K. Nomoto
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP)
  
  Volume: 52 Issue: 8S Pages: 08JJ08-08JJ08
- DOI
  10.7567/jjap.52.08jj08
- NAID
  110009626389
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] High-Temperature Isothermal Capacitance Transient Spectroscopy Study on Inductively Coupled Plasma Etching Damage for p-GaN Surfaces2013
- Author(s)
  Toshichika Aoki, Hisashi Wakayama, Naoki Kaneda, Tomoyoshi Mishima, Kazuki Nomoto, and Kenji Shiojima
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP)
  
  Volume: 52 Issue: 11S Pages: 11NH03-11NH03
- DOI
  10.7567/jjap.52.11nh03
- NAID
  210000143127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies2012
- Author(s)
  U. Honda, Y. Yamada, Y. Tokuda, K. Shiojima
- Journal Title
  
  Japanese Journal of Applied Physics(JJAP)
  
  Volume: vol51 Issue: 4S Pages: 04DF04-04DF04
- DOI
  10.1143/jjap.51.04df04
- NAID
  210000072148
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352, KAKENHI-PROJECT-24560369
[Journal Article] GaN電子素子特性に結晶欠陥が与える影響2009
- Author(s)
  塩島謙次
- Journal Title
  
  日本結晶成長学会誌 36
  
  Pages: 214-221
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] GaN電子素子特性に結晶欠陥が与える影響2009
- Author(s)
  塩島謙次
- Journal Title
  
  結晶成長学会誌
  
  Volume: vol36 Pages: 214-221
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] Simulation of tunneling contact resistivity in non-polar AlGaN/GaN Heterostructures2009
- Author(s)
  Hironari Chikaoka, Yoichi Takakuwa, Kenji Shiojima, Masaaki Kuzuhara
- Journal Title
  
  IEICE Trans.Electron. E92-C
  
  Pages: 691-695
- NAID
  10026822049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] I-V and C-V characteristics of rare-earth-metal/p-GaN Schottky contacts2009
- Author(s)
  Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima
- Journal Title
  
  physica status solidi (c) 6
- NAID
  120001296355
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] Theoretical Investigation of GaN-Based Diodes with a Recessed Composite Schottky-Barrier Structure2009
- Author(s)
  H.Makino, N.Ishikawa, K.Shiojima, M.Kuzuhara
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- NAID
  210000066614
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] Theoretical Investigation of GaN-Based Diodes with a Recessed Composite Schottky-Barrier Structure2009
- Author(s)
  H. Makino, N. Ishikawa, K. Shiojima, M. Kuzuhara
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol48 Issue: 4S Pages: 691-695
- DOI
  10.1143/jjap.48.04c103
- NAID
  210000066614
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] I-V and C-V characteristics of rare-earth-metal/p-GaN Schottky contacts2009
- Author(s)
  Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima
- Journal Title
  
  physica status solidi(c)
  
  Volume: vol.6 Issue: S2
- DOI
  10.1002/pssc.200880857
- NAID
  120001296355
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] Optimum Rapid Thermal Activation for Mg-doped p-type GaN2008
- Author(s)
  Motoi Nagamori, Shuichi Ito, Hiroshi Saito, Kenji Shiojima, Shuhei Yamada, Naoki Shibata, and Masaaki Kuzuhara
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 2865-2867
- NAID
  10022549626
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18860031
[Journal Article] Dual-gate AlGaN/GaN high electron mobility transistors with short gate length for high-power mixers2006
- Author(s)
  K.Shiojima, T.Makimura, T.Maruyama, T.Kosugi, S.Sugitani, N.Shigekawa, M.Hiroki, H.Yokoyama
- Journal Title
  
  physica status solidi (c) 3,No.3
  
  Pages: 469-472
- Data Source
  KAKENHI-PROJECT-18860031
[Journal Article] Effect of epitaxial layer crystal quality on DC and RF characteristics ofAlGaN/GaN short-gate HEMTs2006
- Author(s)
  K.Shiojima, T.Makimura, T.Maruyama, T.Suemitsu, N.Shigekawa, M.Hiroki, H.Yokoyama
- Journal Title
  
  physica status solidi (c) 3,No.6
  
  Pages: 2360-2363
- Data Source
  KAKENHI-PROJECT-18860031
[Journal Article] AlGaN/GaN Dual-gate MENT mixers for 24-GHz pulse-modulation2006
- Author(s)
  K.Shiojima, T.Makimura, T.Kosugi, T.Suemitsu, N.Shigekawa, M.Hiroki, H.Yokoyama
- Journal Title
  
  2006 IEEE MTT-S International Microwave Symposium Digest
  
  Pages: 1331-1334
- Data Source
  KAKENHI-PROJECT-18860031
[Patent] 評価方法、評価システム、半導体素子の製造方法、及び半導体素子2021
- Inventor(s)
  塩島謙次
- Industrial Property Rights Holder
  塩島謙次
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-086773
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-21K04135
[Patent] 顕微光応答法による結晶成長層の界面評価方法2016
- Inventor(s)
  塩島謙次
- Industrial Property Rights Holder
  塩島謙次
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-145940
- Filing Date
  2016-07-26
- Data Source
  KAKENHI-PROJECT-15K05981
[Patent] 半導体変調素子2012
- Inventor(s)
  塩島謙次
- Industrial Property Rights Holder
  塩島謙次
- Industrial Property Rights Type
  特許
- Filing Date
  2012-12-27
- Data Source
  KAKENHI-PROJECT-24560369
[Patent] 半導体素子及びその製造方法2007
- Inventor(s)
  塩島謙次
- Industrial Property Rights Holder
  国立大学法人福井大学
- Filing Date
  2007-03-23
- Data Source
  KAKENHI-PROJECT-18860031
[Presentation] 界面顕微光応答法によるGaNショットキー電極界面の2次元評価2024
- Author(s)
  塩島謙次
- Organizer
  応用物理学会　半導体の結晶成長と加工および評価に関する産学連携委員会第4回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Ni/n-GaN ショットキー接触のI-V 特性における変位電流の評価2024
- Author(s)
  今林弘毅、川西健太郎、太田博、三島友義、塩島謙次
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 界面顕微光応答法によるGaNショットキー電極界面の2次元評価2024
- Author(s)
  塩島謙次
- Organizer
  応用物理学会半導体の結晶成長と加工および評価に関する産学連携委員会第4回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] Photoelectrical Characterization of Heavily-doped p-SiC Schottky Contacts2023
- Author(s)
  Hiroki Imabayashi, Hitose Sawazaki, Haruto Yoshimura, Masashi Kato, Kenji Shiojima
- Organizer
  International conference on Solid State Devices and Materials 2023 (SSDM2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 界面顕微光応答法による電極界面の2次元評価－この7年間の進捗－2023
- Author(s)
  塩島謙次
- Organizer
  日本材料学会 2022年度第4回半導体エレクトロニクス部門委員会第3回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 電圧印加界面顕微光応答法によるAu/Ni/薄層高濃度Mgドープp-GaN/n-GaNショットキー接触の二次元評価2023
- Author(s)
  吉村遥翔, 今林弘毅, 堀切文正, 成田好伸, 藤倉序章, 太田　博，三島友義, 塩島謙次
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Two-Dimensional Characterization of Au/Ni/Thin Heavily-Mg-Doped p-/n-GaN Schottky Contacts under Applied Voltage by Scanning Internal Photoemission Microscopy2023
- Author(s)
  Hiroki Imabayashi, Haruto Yoshimura, Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura, Hiroshi Ohta, Tomoyoshi Mishima, and Kenji Shiojima
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 低温MBE成長GaAsBi層の光電評価2023
- Author(s)
  梅田皆友、今林弘毅、塩島謙次、梅西達哉、富永依里子、行宗詳規、石川史太郎、上田修
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] 低温 MBE 成長 GaAsBi 層の光電評価2023
- Author(s)
  梅田皆友，今林弘殻, 塩島謙次, 梅西達哉, 富永依里子, 行宗詳規, 石川史太郎, 上田修
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 電圧印加界面顕微光応答法によるAu/Ni/薄層高濃度Mg ドープp-/n-GaN ショットキー接触の二次元評価2023
- Author(s)
  今林弘毅, 吉村遥翔, 太田博, 三島友義, 塩島謙次
- Organizer
  先進パワー半導体分科会　第10回講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 電圧印加界面顕微光応答法によるAu/Ni/薄層高濃度Mgドープp-GaN/n-GaN ショットキー接触の二次元評価2023
- Author(s)
  吉村　遥翔、今林　弘毅、堀切文正、成田好伸、藤倉序章、太田　博、三島　友義、塩島　謙次
- Organizer
  電子情報通信学会電子部品・電子デバイス（ED）研究会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 低温MBE成長GaAsBi層の光電評価2023
- Author(s)
  今林弘毅、梅田皆友、塩島謙次、梅西達哉、富永依里子、行宗詳規、石川史太郎、上田修
- Organizer
  第42回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] 界面顕微光応答法によるAu/Ni/p+-SiCショットキー接触の二次元評価2023
- Author(s)
  今林弘毅, 澤崎仁施, 吉村遥翔, 伊藤夏輝, 加藤正史, 塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 電圧印加界面顕微光応答法による n-GaN ショットキー接触の電界集中の可視化2023
- Author(s)
  今林弘毅、堀切文正、成田好伸、福原昇、三島友義、塩島謙次
- Organizer
  日本材料学会2022年度第4回半導体エレクトロニクス部門委員会第3回研究会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 金属/GaNショットキー電極評価の変遷2023
- Author(s)
  塩島謙次
- Organizer
  電子情報通信学会電子部品・材料研究会（CPM）研究会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy2022
- Author(s)
  Yuto Yasui, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Misima, Hiroki Imabayashi, and Kenji Shiojima
- Organizer
  14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] 電圧印加界面顕微光応答法による裾を引いたNi/n-GaNショットキー電極の二次元評価2022
- Author(s)
  今林　弘毅、三島　友義、塩島　謙次
- Organizer
  先進パワー半導体分科会　第9回講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 界面顕微光応答法を用いたdoped-AlNのフォーミング現象の二次元評価2022
- Author(s)
  川角優斗，今林弘毅，塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 金属/GaNショットキー電極の評価－黎明期からの振り返り－2022
- Author(s)
  塩島謙次
- Organizer
  応用物理学会先進パワー半導体分科会第8回個別討論会
- Invited
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] Internal Photoemission Characterization for Low-Temperature-Grown GaAsBi Layers2022
- Author(s)
  Hiroki Imabayashi, Minato Umeda, Kenji Shiojima, Tatsuya Umenishi, Yoriko Tominaga, Mitsuki Yukimune, Fumitaro Ishikawa, Osamu Ueda
- Organizer
  Advanced Metallization Conference 2022 31st Asian Session (ADMETA Plus 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 金属／GaNショットキー電極の評価－黎明期からの振り返り－2022
- Author(s)
  塩島謙次
- Organizer
  先進パワー半導体分科会第8回個別討論会
- Invited
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Two-dimensional characterization on Schottkky contacts on AlGaN / GaN HEMTs by scanning internal phoemission microscopy2022
- Author(s)
  Masahiro Uchida, Yuto Kawasumi, Hiroki Imabayashi, and Kenji Shiojima
- Organizer
  14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Mapping of Ultra-High-Pressure Annealed n-GaN Schottky Contacts Using Internal Photoemission Microscopy2022
- Author(s)
  Hiroki Imabayashi, Kenji Shiojima, and Tetsu Kachi
- Organizer
  9th International Symposium on Control of Semicpnductor Interface (ISCSI-IX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Mapping of Ultra-High-Pressure Annealed n-GaN Schottky Contacts Using Internal Photoemission Microscopy2022
- Author(s)
  Hiroki Imabayashi, Kenji Shiojima, and Tetsu Kachi
- Organizer
  9th International Symposium on Control of Semiconductor Interface (ISCSI-IX))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] 電圧印加界面顕微光応答法によるn-GaNショットキー接触の電界集中の可視化2022
- Author(s)
  今林弘毅, 堀切文正, 成田好伸, 福原　昇, 三島友義, 塩島謙次
- Organizer
  電子情報通信学会電子部品・電子デバイス（ED）研究会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 電圧印加界面顕微光応答法によるn-GaNショットキー接触の電界集中の可視化2022
- Author(s)
  今林弘毅、堀切文正、成田好伸、福原昇、三島友義、塩島謙次
- Organizer
  電子情報通信学会電子部品・電子デバイス(ED)研究会
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] 電圧印加界面顕微光応答法によるn-GaNショットキー接触の電界の二次元評価2022
- Author(s)
  安井悠人、堀切文正、成田好伸、福原昇、三島友義、今林弘毅、塩島謙次
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] 電圧印加界面顕微光応答法によるNi/n-GaNショットキー接触の電極端面構造の二次元評価2022
- Author(s)
  今林弘毅, 堀切文正, 成田好伸, 福原昇, 三島友義, 塩島謙次
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 界面顕微光応答法による超高圧アニールn-GaNショットキー接触の二次元評価2022
- Author(s)
  今林弘毅、塩島謙次、加地徹
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy2022
- Author(s)
  Yuto Yasui, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Misima, Hiroki Imabayashi, and Kenji Shiojima
- Organizer
  14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Internal Photoemission Characterization for Low-Temperature-Grown GaAsBi Layers2022
- Author(s)
  Hiroki Imabayashi, Minato Umeda, Kenji Shiojima, Tatsuya Umenishi, Yoriko Tominaga, Mitsuki Yukimune, Fumitaro Ishikawa, Osamu Ueda
- Organizer
  Advanced Metallization Conference 2022 31st Asian Session (ADMETA Plus 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] Two-dimensional characterization on Schottky contacts on AlGaN / GaN HEMTs by scanning internal photoemission microscopy2022
- Author(s)
  Masahiro Uchida, Yuto Kawasumi, Hiroki Imabayashi, and Kenji Shiojima
- Organizer
  14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] 界面顕微光応答法による超高圧アニールn-GaNショットキー接触の二次元評価2022
- Author(s)
  今林弘毅, 塩島謙次, 加地徹
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 電圧印加界面顕微光応答法によるNi/n-GaNショットキー接触の電極端面構造の二次元評価2022
- Author(s)
  今林弘毅、堀切文正、成田好伸、福原昇、三島友義、塩島謙次
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] 界面顕微光応答法による電極界面の２次元評価ーこの7年間の進歩ー2022
- Author(s)
  塩島謙次
- Organizer
  日本材料学会 2022年度第4回半導体エレクトロニクス部門委員会第3回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy2022
- Author(s)
  Hiroki Imabayashi, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Mishima and Kenji Shiojima
- Organizer
  International Conference on Solid State Devices and Materials 2022 (SSDM2022))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] 界面顕微光応答法による超高圧アニールn-GaNショットキー接触の二次元評価2022
- Author(s)
  今林　弘毅、塩島　謙次、加地　徹
- Organizer
  先進パワー半導体分科会　第9回講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 電圧印加界面顕微光応答法によるn-GaNショットキー接触の電界の二次元評価2022
- Author(s)
  安井悠人, 堀切文正, 成田好伸, 福原昇, 三島友義, 今林弘毅，塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy2022
- Author(s)
  Hiroki Imabayashi, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Mishima and Kenji Shiojima
- Organizer
  International conference on Solid State Devices and Materials 2022 (SSDM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 表面処理の異なるAu/Ni/n-GaNショットキー電極の界面顕微光応答法による評価2021
- Author(s)
  塩島謙次、田中　亮、高島信也、上野勝典、江戸雅晴
- Organizer
  電子情報通信学会電子部品・電子デバイス（ED）研究会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 界面顕微光応答法を用いたワイドギャップ半導体／金属ショットキー接触界面の面内均一性評価2021
- Author(s)
  塩島謙次, 川角優斗, 堀切文正, 福原昇, 三島友義, 四戸孝, 今林弘毅
- Organizer
  先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 表面処理の異なるAu/Ni/n-GaNショットキー電極の界面顕微光応答法による評価2021
- Author(s)
  塩島謙次、田中　亮、高島信也、上野勝典、江戸雅晴
- Organizer
  電子情報通信学会電子部品・電子デバイス（ED）研究会、ED2021-28
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] 界面光顕微応答法によるワイドバンドギャップ半導体ショットキー接触の均一性評価2021
- Author(s)
  川角優斗，堀切文正，福原昇, 三島友義,四戸孝, 塩島謙次
- Organizer
  日本材料学会令和3年度半導体エレクトロニクス部門委員会第1回研究会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Two-Dimensional Characterization of Wide-Bandgap Materials and Contact Interfaces by Using Scanning Internal Photoemission Microscopy2021
- Author(s)
  Kenji Shiojima
- Organizer
  240th Electrochemical society (ECS) Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] Niナノインクを用いて印刷法で形成したn-GaNショットキー接触の二次元評価2021
- Author(s)
  川角優斗，安井悠人，柏木行康，玉井聡行，塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法によるSiC、GaN、α-Ga2O3ショットキー接触の面内均一性評価2021
- Author(s)
  川角優斗, 堀切文正, 福原昇, 三島友義, 四戸孝, 塩島謙次
- Organizer
  電子情報通信学会電子部品・電子デバイス（ED）研究会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Characterization of Au/Ni/n-GaN Schottky Contacts with Different Surface Treatments2021
- Author(s)
  Kenji Shiojima, Ryo Tanaka, Shinya Takashima, Katsunori Ueno and Masaharu Edo
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applicationa for Nitrides and Nanomaterials (ISPlasma 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Mapping of Contactless Photoelectrochemical Etched GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy --- Difference in Electrolytes ---2021
- Author(s)
  K. Shiojima, R. Matsuda, F. Horikiri, Y. Narita, N. Fukuhara and T. Mishima
- Organizer
  International conference on Solid State Devices and Materials 2021 (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 界面光顕微応答法によるSiC、GaN、a-Ga2O3ショットキー接触の均一性の評価2021
- Author(s)
  塩島謙次、川角優斗、堀切文正、福原昇、三島友義、四戸孝
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] Two-Dimensional Characterization of Wide-Bandgap Materials and Contact Interfaces by Using Scanning Internal Photoemission Microscopy2021
- Author(s)
  Kenji Shiojima
- Organizer
  240th Electrochemical society (ECS) Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 表面処理の異なるAu/Ni/n-GaNショットキー電極の熱処理による電気的特性の改善2021
- Author(s)
  今林弘毅,　塩島謙次,　田中　亮,　高島信也,　上野勝典,　江戸雅晴
- Organizer
  先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 界面光顕微応答法によるSiC、GaN、α-Ga2O3ショットキー接触の均一性の評価2021
- Author(s)
  塩島謙次, 川角優斗，堀切文正，福原昇, 三島友義,四戸孝
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Mapping of Contactless Photoelectrochemical Etched GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy --- Difference in Electrolytes ---2021
- Author(s)
  K. Shiojima, R. Matsuda, F. Horikiri, Y. Narita, N. Fukuhara and T. Mishima
- Organizer
  International conference on Solid State Devices and Materials 2021 (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04910
[Presentation] Mapping of Schottky Contacts on p-4H-SiC Wafers Using Scanning Internal Photoemission Microscopy2021
- Author(s)
  Kenji Shiojima, and Masashi Kato
- Organizer
  Compound Semiconductor Week (CSW) 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] Two-Dimensional Characterization of n-GaN Schottky Contacts Printed by Using Ni Nanoink2020
- Author(s)
  Kenji Shiojima, Yuto Kawasumi, Yuto Yasui, Yukiyasu Kashiwagi, Toshiyuki Tamai
- Organizer
  International conference on Solid State Devices and Materials 2020 (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法によるp-4H-SiCウエハー上ショットキー電極の2次元評価2020
- Author(s)
  塩島謙次、Nabilah Fatin、松田稜、加藤正史
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法による表面処理の異なるAu/Ni/n-GaNショットキー電極の評価2020
- Author(s)
  塩島謙次、田中亮、高島信也、上野勝典、江戸雅晴
- Organizer
  応用物理学秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法によるコンタクトレス光電気化学エッチングしたNi/n-GaNショットキーの2次元評価2020
- Author(s)
  松田陵、堀切文正、成田好伸、吉田丈洋、三島友義、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Niナノインクを用いた印刷法で形成したn-GaNショットキー接触の二次元評価2020
- Author(s)
  川角優斗、安井悠人、柏木行康、玉井聡行、塩島謙次
- Organizer
  電子情報通信学会電子部品・電子デバイス（ED）研究会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法を用いた光電気化学エッチングしたNi/GaNショットキーの２次元評価－n形とp形の比較－2020
- Author(s)
  松田　陵、堀切　文正、成田　好伸、吉田　丈洋、福原　昇、三島　友義、塩島　謙次
- Organizer
  電子情報通信学会電子部品・電子デバイス（ED）研究会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法を用いた窒化物半導体HEMT上のショットキー電極の2次元評価2020
- Author(s)
  内田昌宏、川角優斗、西村一巳、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy -- Comparison between n- and p-type GaN samples -2020
- Author(s)
  Ryo Matsuda, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Noboru Fukuhara, Tomoyoshi Mishima, Kenji Shiojima
- Organizer
  International conference on Solid State Devices and Materials 2020 (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] コンタクトレス光電気化学エッチングしたNi/n-GaNショットキーの評価 --電解液による違い--2020
- Author(s)
  松田陵、堀切文正、福原昇、成田好伸、吉田丈洋、三島友義、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面光顕微応答法によるゲートリセスPECエッチングしたAlGaN/GaN HEMT構造の二次元評価2020
- Author(s)
  川角優斗、堀切文正、福原昇、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法によるn-GaN上に印刷法で形成したNi，Agショットキー接触の二次元評価2020
- Author(s)
  川角優斗、安井悠人、柏木行康、玉井聡行、塩島謙次
- Organizer
  令和2年度第3回半導体エレクトロニクス部門委員会第2回研究会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微応答法を用いたInAlN-HEMT構造上のショットキー電極の2次元評価2020
- Author(s)
  内田昌宏、川角優斗、西村一巳、渡邉則之、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法による2段階フォトンアップコンバージョン太陽電池の二次元評価2020
- Author(s)
  平野智也, 朝日重雄, 喜多隆, 塩島謙次
- Organizer
  令和2年度第4回半導体エレクトロニクス部門委員会第3回研究会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法によるSiCウエハーに存在する構造欠陥の2次元評価2019
- Author(s)
  塩島謙次、松田稜、加藤正史
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法による金属／半導体、半導体／半導体界面の2次元評価2019
- Author(s)
  塩島謙次
- Organizer
  電子情報通信学会電子部品・材料研究会（CPM）
- Invited
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法による光電気化学エッチングしたNi/GaNショットキーの2次元評価 --n形とp形の比較--2019
- Author(s)
  松田陵, 堀切文正, 成田好伸, 吉田丈洋, 三島友義, 塩島謙次
- Organizer
  日本材料学会令和元年度第2回研究会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法による金属／半導体、半導体／半導体界面の2次元評価2019
- Author(s)
  塩島謙次
- Organizer
  電子情報通信学会電子部品・材料研究会（CPM）
- Invited
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] Mapping of Metal/Semiconductor and Semiconductor/Semiconductor Interfaces Using Scanning Internal Photoemission Microscopy2019
- Author(s)
  Kenji Shiojima
- Organizer
  2019 IEEE CPMT Symposium Japan (ICSJ)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Uniformity Characterization of Printed Schottky Contacts Formed on n-GaN Epitaxial Layers by Using Ag Nanoink2019
- Author(s)
  Kenji Shiojima, Yukiyasu Kashiwagi, Atsushi Koizumi, Masashi Saitoh, Toshiyuki Tamai, and Yasufumi Fujiwara
- Organizer
  International conference on Solid State Devices and Materials 2019 (SSDM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法によるN極性p形GaNショットキー電極の2次元評価2019
- Author(s)
  塩島謙次、谷川智之、片山竜二、松岡隆志
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Hole traps produced in MOVPE-grown n-GaN by hydrogen implantation2019
- Author(s)
  Yutaka Tokuda, Shun Itoh, Kazuya Tamura, Joji Ito, Takahide Yagi, Kenji Shiojima
- Organizer
  18th Conference on Defects-Recognition , Imaging and Physics in Semiconductors (DRIP XVIII)
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] Effect of Wafer Off-Angles on Defect Formation in Drift Layers Grown on Freestanding GaN Substrates2019
- Author(s)
  Kenji Shiojima, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, and Tomoyoshi Mishima
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS 13)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法による電極界面の欠陥、劣化過程の2次元解析2019
- Author(s)
  塩島謙次
- Organizer
  応用物理学会結晶工学分科会第24回結晶工学セミナー
- Invited
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法による電気化学エッチングしたNi/n-GaNショットキーの2次元評価2019
- Author(s)
  松田陵、堀切文正、成田好伸、吉田丈洋、三島友義、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法によるエッチングしたGaN表面の2次元評価2019
- Author(s)
  塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Mapping of Photo-Electrochemical Etched Ni/n-GaN Schottkey Contacts Using Scanning Internal Photoemission Microscopy2019
- Author(s)
  Ryo MATSUDA, Fumimasa HORIKIRI, Yoshinobu NARITA, Takehiro YOSHIDA, Tomoyoshi MISHIMA, Kenji SHIOJIMA
- Organizer
  Material Research Meeting 2019 (MRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Mapping of n-GaN Schottky Contacts Formed on Facet-Growth Substrates Using Scanning Internal Photoemission Microscopy2019
- Author(s)
  Kenji Shiojima, Masataka Maeda, and Kaori Kurihara
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS 13)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法による電極界面の欠陥、劣化過程の2次元解析2019
- Author(s)
  塩島謙次
- Organizer
  応用物理学会結晶工学分科会第24回結晶工学セミナー
- Invited
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] Mapping of Metal/Semiconductor and Semiconductor/Semiconductor Interfaces Using Scanning Internal Photoemission Microscopy2019
- Author(s)
  Kenji Shiojima
- Organizer
  2019 IEEE CPMT Symposium Japan (ICSJ)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] 界面顕微光応答法による電気化学エッチングしたNi/n-GaNショットキーの2次元評価2019
- Author(s)
  松田陵、堀切文正、成田好伸、吉田丈洋、三島友義、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] 界面顕微光応答法による電気化学エッチングしたNi/GaNショットキーの2次元評価 (Ⅱ)--n形とp形の比較―2019
- Author(s)
  松田陵、堀切文正、成田好伸、吉田丈洋、三島友義、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Mapping of interfacial reaction of a-Ga2O3 Schottky contacts using scanning internal photoemission microscopy2018
- Author(s)
  Kenji Shiojima, Hitoshi Kambara, Tokiyoshi Matsuda, and Takashi Shinohe
- Organizer
  4th E-MRS & MRS-J Bilateral Symposium
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 中性粒子ビームエッチングによりGaN表面に導入された損傷の界面顕微光応答法による2次元評価2018
- Author(s)
  塩島謙次、末光哲也、尾崎卓哉、寒川誠二
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法によるファセット成長n-GaNショットキー接触の2次元評価2018
- Author(s)
  前田昌嵩、塩島謙次、栗原香
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] Mapping of neutral-beam etching iduced damages on GaN surfaces using scanning internal photoemission microscopy2018
- Author(s)
  Kenji Shiojima, Tetsuya Suemitsu, Takuya Ozaki, and Seiji Samukawa
- Organizer
  IWN 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] Mapping of neutral-beam etching induced damages on GaN surfaces using scanning internal photoemission microscopy2018
- Author(s)
  Kenji Shiojima, Tetsuya Suemitsu, Takuya Ozaki, and Seiji Samukawa
- Organizer
  IWN 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage2018
- Author(s)
  Kenji Shiojima, Masataka Maeda, and Tomoyoshi Mishima
- Organizer
  IWN 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] Mapping of metal/semiconductor and semiconductor/semiconductor interfaces using scanning internal photoemission microscopy2018
- Author(s)
  Kenji Shiojima
- Organizer
  4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Mapping of Ni/SiNx/n-SiC Structure Using Scanning Internal Photoemission Microscopy2018
- Author(s)
  Kenji Shiojima, Takanori Hashizume, Masaru Sato, and Mayumi B. Takeyama
- Organizer
  International conference on Solid State Devices and Materials 2018 (SSDM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法によるファセット成長n-GaNショットキー接触の2次元評価2018
- Author(s)
  前田昌嵩、塩島謙次、栗原香
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 界面顕微光応答法によるNi/SiN/n-SiC MIS構造の２次元評価2018
- Author(s)
  橋爪孝典、佐藤勝、武山真弓、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] ニードル式マイクロディスペンサを用いたナノインク描画と焼結により形成された銀電極の各種基板上での電気的特性の評価2018
- Author(s)
  柏木行康、斉藤大志、長谷川貴洋、千金正也、塩島謙次、垣内宏之
- Organizer
  第24回「エレクトロニクスにおけるマイクロ接合・実装技術」シンポジウム（Mate2018）
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage2018
- Author(s)
  Kenji Shiojima, Masataka Maeda, and Tomoyoshi Mishima
- Organizer
  IWN 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Mapping of interfacial reaction of a-Ga2O3 Schottky contacts using scanning internal photoemission microscopy2018
- Author(s)
  Kenji Shiojima, Hitoshi Kambara, Tokiyashi Matsuda, and Takashi Shinohe
- Organizer
  4th E-MRS & MRS-J Bilateral Symposium
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] GaNショットキー接合の黎明期からのふり返り2018
- Author(s)
  塩島謙次
- Organizer
  日本学術振興会産学協力研究委員会半導体界面制御技術第154 委員会第107 回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] n-GaNショットキー接触の電圧印加界面顕微光応答測定2018
- Author(s)
  塩島謙次、前田昌嵩、三島友義
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] 中性粒子ビームエッチングによりGaN表面に導入された損傷の界面顕微光応答法による2次元評価2018
- Author(s)
  塩島謙次、末光哲也、尾崎卓哉、寒川誠二
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] Mapping of metal/semiconductor and semiconductor/semiconductor interfaces using scanning internal photoemission micoscopy2018
- Author(s)
  Kenji Shiojima
- Organizer
  4th E-MRS & MRS-J Bilateral Symposium
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] Mapping of Ni/SiNx/n-SiC Structure Using Scanning Internal Photoemission Microscopy2018
- Author(s)
  Kenji Shiojima, Takanori Hashizume, Masaru Sato, and Mayumi B. Takeyama
- Organizer
  International Conference on Solid State Devices and Materials 2018 (SSDM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] GaN系材料の結晶評価、電極形成技術のふり返り2018
- Author(s)
  塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] GaN自立基板上に成長したドリフト層中の欠陥生成におけるオフ角の影響2018
- Author(s)
  塩島謙次、佐川知大、堀切文正、成田好伸、吉田丈洋、三島友義
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Mapping of metal/semiconductor and semiconductor/semiconductor interfaces using scanning internal photoemission microscopy2018
- Author(s)
  Kenji Shiojima
- Organizer
  4th E-MRS & MRS-J Bilateral Symposium
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] n-GaNショットキー接触の電圧印加界面顕微光応答測定2018
- Author(s)
  塩島謙次, 前田　昌嵩, 三島友義
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Effect of Surface Treatment in Printed Ag Schottky Contacts on n-GaN Epitaxial Layers by Using Ag Nanoink2017
- Author(s)
  Kenji Shiojima, Tasuku Shigemune, Atsushi Koizumi, Takanori Kojima, Yukiyasu Kashiwagi, Masashi Saitoh, Takahiro Hasegawa, Masaya Chigane, and Yasufumi Fujiwara
- Organizer
  Advanced Metallization Coference 2017 (ADMETA 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法によるSi基板上Ni/AlGaN/GaNショットキー接触の２次元評価2017
- Author(s)
  小西宏明、今立宏美、山岡優哉、松本功、江川孝志、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  横浜市（パシフィコ横浜）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法を用いたAlGaN/GaN MIS HEMTの劣化過程の2次元評価2017
- Author(s)
  村瀬真悟、渡村遥、末光哲也、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  横浜市（パシフィコ横浜）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Observations of Inhomogeneity of 3C-SiC Layers Grown on 6H-SiC Substrates Using Scanning Internal Photoemission Microscopy2017
- Author(s)
  K. Shiojima, N. Mishina, N. Ichikawa, M. Kato
- Organizer
  International conference on Solid State Devices and Materials 2017 (SSDM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法によるn-GaN自立基板表面の波形モフォロジーの2次元評価2017
- Author(s)
  塩島謙次、橋爪孝典、堀切文正、田中丈士、三島友義
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法によるNi/n-GaNの界面反応の二次元評価2017
- Author(s)
  纐纈悠貴、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  横浜市（パシフィコ横浜）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Mapping of n-GaN Schottky contacts with wavy surface morphology using scanning internal phoemission microscopy2017
- Author(s)
  S. Shiojima, T. Hashizume, F. Horikiri, T. Tanaka, and T. Mishima
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] 界面顕微光応答法による6H-SiC基板上Ni/p-3C-SiCショットキー接触の2次元評価2017
- Author(s)
  塩島謙次、三品直樹、市川尚澄、加藤正史
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  横浜市（パシフィコ横浜）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] In-Situ Mapping of Degradation of AlGaN/GaN MIS-HEMTs Using Video-Mode Scanning Internal Photoemission Microscopy2017
- Author(s)
  K. Shiojima, S. Murase, Y. Watamura, T. Suemitsu
- Organizer
  International conference on Solid State Devices and Materials 2017 (SSDM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Development of dual-focus scanning internal photoemission microscopy for mapping of both top and rear surfaces of 3C-SiC layers2017
- Author(s)
  K. Shiojima, N. Ichikawa, and M. Kato
- Organizer
  Compound Semiconductor Week 2017 (CSW2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 金属／GaNショットキー接触の評価－黎明期からの振り返り－2017
- Author(s)
  塩島謙次
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  電子情報通信学会電子デバイス研究会
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] n-GaNショットキー接触の電圧印加界面顕微光応答測定2017
- Author(s)
  前田昌嵩、三島友義、塩島謙次
- Organizer
  第78回応用物理学会秋季学術講演会2017
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] 界面顕微光応答法によるα-Ga2O3ショットキー接触の界面反応の2次元評価2017
- Author(s)
  今立宏美、神原仁志、徳田梨絵、松田時宜、四戸孝、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法による金属/半導体、半導体/半導体界面の2次元評価2017
- Author(s)
  塩島謙次
- Organizer
  応用物理学会結晶工学分科会第147回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] Mapping of n-GaN Schottky contacts with wavy surface morphology using scanning internal photoemission microscopy2017
- Author(s)
  K. Shiojima, T. Hashizume, F. Horikiri, T. Tanaka, and T. Mishima
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法による金属/半導体、半導体/半導体界面の2次元評価2017
- Author(s)
  塩島謙次
- Organizer
  応用物理学会結晶工学分科会第147回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Defect Observations of Ni/AlGaN/GaN Schottky Contacts on Si Substrates Using Scanning Internal Photoemission Microscopy2017
- Author(s)
  K. Shiojima, H. Konishi, H. Imadate, Y. Yamaoka, K. Matsumoto, T. Egawa
- Organizer
  International conference on Solid State Devices and Materials 2017 (SSDM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] In-Situ Mappinh of Dehradation of AlGaN/GaN MIS-HEMTs Using Video-Mode Scanning Internal Photoemission Microscopy2017
- Author(s)
  K. Shiojima, S. Murase, Y. Watamura, T. Suemitsu
- Organizer
  International conference on Solid State Devices and Materials 2017 (SSDM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] Development of dual-focus scanning internal photoemission microscopy for mapping of both top and rear surfaces of 3C-SiC layers2017
- Author(s)
  K. Shiojima, N. Ichikawa, and M. Kato
- Organizer
  Compound Semiconductor Week 2017 (CSW2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05044
[Presentation] n-GaNショットキー接触の電圧印加界面顕微光応答測定2017
- Author(s)
  前田昌嵩、三島友義、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 自立GaN基板上p+-nダイオードのエピ層表面モフォロジーによる不均一な電流密度分布2017
- Author(s)
  林賢太郎、太田博、堀切文正、成田好伸、吉田丈洋、藤倉序章、塩島謙次、中村徹、三島友義
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 複焦点界面顕微光応答法による3C-SiC層の2次元評価2016
- Author(s)
  塩島謙次、市川尚澄、加藤正史
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  新潟市（朱鷺メッセ）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] ICPエッチングによりGaN表面に導入された損傷の界面顕微光応答法による2次元評価2016
- Author(s)
  今立宏美、寺野昭久、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  東京都（東工大）
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] ICPエッチングによりGaN表面に導入された損傷の界面顕微光応答法による2次元評価2016
- Author(s)
  今立　宏美、寺野　昭久、塩島　謙次
- Organizer
  平成２８年度第2回半導体エレクトロニクス部門委員会第1回研究会
- Place of Presentation
  大阪府立大学
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法によるSi/SiC ヘテロ接合の2 次元評価2016
- Author(s)
  新郷正人, LiangJianbo, 重川直輝, 塩島謙次
- Organizer
  日本材料学会平成27年度第4回半導体エレクトロニクス部門委員会第1回講演会・見学会
- Place of Presentation
  福井市（福井大学）
- Year and Date
  2016-01-30
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法によるNi/p-3C-SiCショットキー接触の2次元評価2016
- Author(s)
  新郷正人、市川尚澄、加藤正史、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  東京都（東工大）
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法によるAu/Ni/n-GaNショットキー接触の電圧印加劣化の2次元評価2016
- Author(s)
  塩島謙次、村瀬真悟、前田昌嵩、三島友義
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  京都市(京都大学)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Role of C Doping in Low-Carrier n-GaN Epitaxial Layers for High-Power Schottky Diode Development2016
- Author(s)
  Kenji Shiojima
- Organizer
  2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016)
- Place of Presentation
  Hakodate Kokusai Hotel, Hakodate, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法を用いたイオン注入n-SiCショットキー接触の2次元評価2016
- Author(s)
  村瀬真悟、三島友義、中村徹、塩島謙次
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  東京都（東工大）
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法によるNi/n-SiCの界面反応の２次元評価2016
- Author(s)
  橋爪孝典, 畑祐介, 加藤正史, 塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  新潟市（朱鷺メッセ）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Mapping of ICP-Etching Induced Damages on GaN Surfaces Using Scanning Internal Photoemission Microscopy2016
- Author(s)
  Hiroyoshi Imadate, Akihisa Terano, and Kenji Shiojima
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-IIV)
- Place of Presentation
  Nagoya University, Nagoya, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法によるn-GaN自立基板表面の波形モフォロジーの2次元評価2016
- Author(s)
  塩島謙次, 橋爪孝典, 堀切文正, 田中丈士, 三島友義
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  新潟市（朱鷺メッセ）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法を用いたAu/p形ダイヤモンドショットキー接触の2次元評価2016
- Author(s)
  青木俊周、寺地徳之、小出康夫、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  新潟市（朱鷺メッセ）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 2-Dimentional Characterization of 3C-SiC Layers Using Scanning Internal Photoemission Microscopy2016
- Author(s)
  Kenji Shiojima, Masato Shingo, Naoto Ichikawa, Masashi Kato
- Organizer
  International conference on Solid State Devices and Materials 2016 (SSDM2016)
- Place of Presentation
  Tsukuba International Congress Center, Tsukuba, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Observation of Initial Stage of Degradation in Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy2016
- Author(s)
  Kenji Shiojima, Shingo Murase, Masataka Maeda, and Tomoyoshi Mishima
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Hilton Orland Lake Buena Vista, Orland, Florida, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 電圧ストレスにより劣化したn-GaN ショットキー接触の2 次元評価2016
- Author(s)
  村瀬真悟, 太田博, 三島友義, 塩島謙次
- Organizer
  日本材料学会平成27年度第4回半導体エレクトロニクス部門委員会第1回講演会・見学会
- Place of Presentation
  福井市（福井大学）
- Year and Date
  2016-01-30
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Mapping of Ion-Implanted n-SiC Schottky Contacts Using Scanning Internal Photoemission Microscopy2016
- Author(s)
  Shingo Murase, Tomoyoshi Mishima, Tohru Nakamura, and Kenji Shiojima
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-IIV)
- Place of Presentation
  Nagoya University, Nagoya, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 顕微光応答法による金属/半導体界面の２次元評価2016
- Author(s)
  塩島謙次
- Organizer
  日本材料学会平成27年度第4回半導体エレクトロニクス部門委員会第1回講演会・見学会
- Place of Presentation
  福井市（福井大学）
- Year and Date
  2016-01-30
- Invited
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] N極性p形GaNショットキー電極の電気的特性の評価2015
- Author(s)
  青木俊周, 谷川智之, 片山竜二, 松岡隆志、塩島謙次
- Organizer
  応用物理学会春期学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 自立基板の劈開面に形成したn-GaNショットキー接触の評価2015
- Author(s)
  永縄萌、青木俊周、吉田丈洋、三島友義、塩島謙次
- Organizer
  応用物理学会春期学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 界面顕微光応答法を用いたAu/a-IGZOショットキー接触の通電劣化の2次元評価2015
- Author(s)
  新郷正人、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市（名古屋国際会議場）
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 電圧ストレス印加により劣化したn-GaNショットキー電極の2次元評価2015
- Author(s)
  村瀬真悟、太田博、三島友義、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市（名古屋国際会議場）
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 2-Dimentional Characterization of Ion-implantation Damage in GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy2015
- Author(s)
  Kenji Shiojima, Shingo Murase, Shingo Yamamoto, Tomoyoshi Mishima and Tohru Nakamura
- Organizer
  nternational conference on Solid State Devices and Materials 2015 (SSDM2015)
- Place of Presentation
  Sapporo convention center, Sapporo
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] GaN系デバイスにおける結晶欠陥の影響2015
- Author(s)
  塩島謙次
- Organizer
  金属学会セミナー
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2015-11-12
- Invited
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法によるSi/SiCヘテロp-n接合の2次元評価2015
- Author(s)
  新郷正人、Jianbo Liang、重川直輝、新井学、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市（名古屋国際会議場）
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Photoemission Spectroscopy Measurements of p+-Si/n-SiC and n+-Si/n-SiC junctions by Surface Activated Bonding2015
- Author(s)
  Naoteru Shigekawa, Jianbo Liang, Masato Shingo, Manabu Arai and Kenji Shiojima
- Organizer
  International conference on Solid State Devices and Materials 2015 (SSDM2015)
- Place of Presentation
  Sapporo convention center, Sapporo
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Non-destructive imaging of buried interfaces of SiC and GaN Schottky diodes by scanning internal photoemission microscopy2015
- Author(s)
  Kenji Shiojima, Shingo Yamamoto, Yuhei Kihara, and Tomoyoshi Mishima
- Organizer
  42nd International Symposium on Compound Semiconducors (ISCS)
- Place of Presentation
  UCSB, Santa Barbara, CA, USA
- Year and Date
  2015-06-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法を用いたイオン注入n-GaNショットキー接触の２次元評価2015
- Author(s)
  村瀬真悟, 山本晋吾,田中丈士, 三島友義, 中村徹、塩島謙次
- Organizer
  応用物理学会春期学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Mapping of Si/SiC Hetero p-n Junctions Using Scanning Internal Photoemission Microscopy2015
- Author(s)
  Masato Shingo, Jianbo Liang, Naoteru Shigekawa, Manabu Arai and Kenji Shiojima
- Organizer
  International conference on Solid State Devices and Materials 2015 (SSDM2015)
- Place of Presentation
  Sapporo convention center, Sapporo
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 界面顕微光応答法を用いたAlGaN/GaN HEMTの劣化過程の２次元評価2015
- Author(s)
  山本晋吾、畠山信也、末光哲也、塩島謙次
- Organizer
  応用物理学会春期学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 界面顕微光応答法によるAu/Ni/n-GaNショットキー接触の熱劣化機構の2次元評価2014
- Author(s)
  塩島謙次, 山本　晋吾, 木原雄平
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  大阪大
- Year and Date
  2014-11-28
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 界面顕微光応答法を用いたn-GaNショットキー接触の２次元評価--表面構造の影響--2014
- Author(s)
  山本晋吾, 木原雄平, 塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  北海道大
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] GaN表面、界面、結晶欠陥の評価とデバイス特性への影響2014
- Author(s)
  塩島謙次
- Organizer
  第24回格子欠陥フォーラム「パワーデバイス開発のための格子欠陥評価･制御」
- Place of Presentation
  かんぽの宿恵那、岐阜県恵那市
- Year and Date
  2014-09-11
- Invited
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates2014
- Author(s)
  Kenji Shiojima, Yuhei Kihara, Toshichika Aoki
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 界面顕微光応答法によるNi/n-SiCショットキー接触の２次元評価2014
- Author(s)
  木原雄平, 山本晋吾, 塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  北海道大
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 低Mgドープp-AlGaN 及びp-InGaNショットキー電極の電気的特性の評価2014
- Author(s)
  青木俊周, 橘佐智, 塩島謙次
- Organizer
  応用物理学会春期学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 界面顕微光応答法によるn-GaNショットキー接触の熱劣化過程の2次元評価2014
- Author(s)
  山本晋吾, 木原雄平, 塩島謙次
- Organizer
  応用物理学会春期学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts2014
- Author(s)
  Moe Naganawa, Toshichika Aoki, Ji-Su Son, Hiroshi Amano, Kenji Shiojima
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-27
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Detail analysis of electrical characteristics of metal/low-Mg-doped p-GaN contacts2014
- Author(s)
  Kenji Shiojima
- Organizer
  2nd Intensive Discussion of Growth of Nitride Semiconductors
- Place of Presentation
  Tohoku Univ., Sendai Japan
- Year and Date
  2014-11-30
- Invited
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 低Mgドープp-AlGaN 及びp-InGaNショットキー電極の表面欠陥の評価2014
- Author(s)
  青木俊周, 塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  北海道大
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] a面低Mgドープp-GaNショットキー接触の評価(2)2014
- Author(s)
  永縄萌, 青木俊周, Ji-Su Son, 天野浩, 塩島謙次
- Organizer
  応用物理学会春期学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Mapping of inhomogeneity and thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy2014
- Author(s)
  Shingo Yamamoto, Yuhei Kihara, and Kenji Shiojima
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-27
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] GaNパワー/高周波デバイスの最前線徹底解説2014
- Author(s)
  塩島　謙次
- Organizer
  Electronic Journal 第2615回 Technical Seminar
- Place of Presentation
  総評会館　東京
- Year and Date
  2014-12-11
- Invited
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Electrical Characteristics of Low-Mg-doped p-AlGaN and p-InGaN Schottky Contacts2014
- Author(s)
  Toshichika Aoki, Sachi Tachibana and Kenji Shiojima
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] AC Operation of Low-Mg-Doped p-GaN Schottky Diodes2013
- Author(s)
  青木俊周, 金田直樹, 三島友義, 塩島謙次
- Organizer
  第３２回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] p形GaNショットキー接触における水素プラズマ処理の影響2013
- Author(s)
  青木俊周, 吉田智洋, 末光哲也、金田直樹,三島友義, 塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  同志社大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] GaN系材料表面・界面評価の進展 -基礎物性から出発するデバイス性能向上へのアプローチ-2013
- Author(s)
  塩島謙次、中村成志
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Invited
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] GaN基板上低キャリア厚膜n-GaNショットキー接触の評価（２）2013
- Author(s)
  木原雄平, 塩島謙次、青木俊周, 金田直樹, 三島友義
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  同志社大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 低Mgドープp形GaNショットキー接触の評価2013
- Author(s)
  塩島謙次
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Invited
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Characterization of electron traps in MOCVD p-GaN by minority carrier transient spectroscopy2013
- Author(s)
  Unhi Honda, Toshiya Matsuura, Hidenari Naito, Yutaka Tokuda, Kenji Shiojima
- Organizer
  5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (IsPlasma2013)
- Place of Presentation
  Aichi Pref. Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 界面顕微光応答法によるn-GaNショットキー接触の2次元評価2013
- Author(s)
  山本晋吾、青木俊周, 金田直樹, 三島友義, 塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  同志社大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] a面低Mgドープp-GaNショットキー接触の評価2013
- Author(s)
  青木俊周, Ji-Su Son、天野浩、塩島謙次
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  同志社大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Initial stage of ohmic formation for Ti/Al contacts on GaN and AlGaN/GaN2013
- Author(s)
  K. Shiojima, H. Yokohama, and G. Araki
- Organizer
  6th International WorkShop on New Group IV Semiconductor Nanoelectronics  and  JSPS Core-to-Core Program
- Place of Presentation
  Sendai Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Displacement current in current-voltage characteristics of metal/low-Mg-doped p-GaN interfaces2013
- Author(s)
  Kenji Shiojima, Toshichika Aoki, Naoki Kaneda, and Tomoyoshi Mishima
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] GaN自立基板上低キャリア厚膜n-GaNショットキー接触の評価2013
- Author(s)
  塩島謙次, 木原雄平, 青木俊周, 金田直樹, 三島友義
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  大阪大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Evaluation of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates2013
- Author(s)
  Kenji Shiojima, Yuhei Kihara, Toshichika Aoki, Naoki Kaneda, and Tomoyoshi Mishima
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] High-temperature ICTS study on ICP etching damages for p-GaN surfaces2013
- Author(s)
  Toshitika Aoki, Hisashi Wakayama, Naoki Kaneda, Tomoyoshi Mishima, Kazuki Nomoto, Kenji Shiojima
- Organizer
  5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (IsPlasma2013)
- Place of Presentation
  Aichi Pref. Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 低Mgドープｐ－GaNショットキー接触のAC動作2013
- Author(s)
  塩島謙次,青木俊周, 金田直樹, 三島友義
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  大阪大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] GaN基板上低キャリア厚膜n-GaNショットキー接触の評価2013
- Author(s)
  塩島謙次、木原雄平、青木俊周, 金田直樹, 三島友義
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 低Mgドープp-GaNショットキー接触の交流動作2013
- Author(s)
  青木俊周, 金田直樹, 三島友義, 塩島謙次
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 高抵抗GaNのトラップ評価2013
- Author(s)
  徳田豊、田中丈士、塩島謙次、乙木洋平
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  同志社大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] AC Operation of Low-Mg-Doped p-GaN Schottky Diodes”, 6th International Symposium on Control of Semiconductor Interfaces2013
- Author(s)
  Toshichika Aoki, Naoki Kaneda, Tomoyoshi Mishima, and Kenji Shiojima
- Organizer
  6th International Symposium on Control of Semiconductor Interfaces (ISCSI-IV)
- Place of Presentation
  Fukoka
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Metal work function dependence of Schottky barrier height by internal photoemission measurements of low-Mg-doped p-GaN Schottky contacts2013
- Author(s)
  Toshichika Aoki, and Kenji Shiojima
- Organizer
  2013 MRS (Material Research Society) fall meeting
- Place of Presentation
  Boston, U.S.A.
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Systematic Study on Defect Formation and HEMT Operation of Low-Carbon Doped GaN Layers2013
- Author(s)
  Takeshi Tanaka, Yohei Otoki, Kenji Shiojima, and Yutaka Tokuda
- Organizer
  6th International Symposium on Control of Semiconductor Interfaces (ISCSI-IV)
- Place of Presentation
  Fukoka
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] High-Temperature ICTS Study on SiN Deposition Damages for Low-Mg-Doped p-GaN Schottky Diodes2013
- Author(s)
  Kenji Shiojima, Hisashi Wakayama, Toshichika Aoki, Naoki Kaneda, Kazuki Nomoto, and Tomoyoshi Mishima
- Organizer
  6th International Symposium on Control of Semiconductor Interfaces (ISCSI-IV)
- Place of Presentation
  Fukoka
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Characterization of traps in high-resistivity MOCVD GaN doped with carbon2013
- Author(s)
  Yutaka Tokuda, Takeshi Tanaka, Kenji Shiojima and Yohei Otoki,
- Organizer
  2013 MRS (Material Research Society) fall meeting
- Place of Presentation
  Boston, U.S.A.
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Detail analysis of electrical characteristics of metal/low-Mg-doped p-GaN interfaces2013
- Author(s)
  Kenji Shiojima
- Organizer
  6th International WorkShop on New Group IV Semiconductor Nanoelectronics  and  JSPS Core-to-Core Program
- Place of Presentation
  Sendai Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] GaNパワー/高周波デバイスの最前線徹底解説2013
- Author(s)
  塩島　謙次
- Organizer
  Electronic Journal 第2029回 Technical Seminar
- Place of Presentation
  総評会館　東京
- Invited
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] p形GaNショットキー接触におけるICPエッチングの影響(2)--高温ICTSによる評価―2012
- Author(s)
  高橋利文, 金田直樹, 三島友義, 野本一貴, 塩島謙次
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 低Mgドープp-GaNショットキー接触の順方向I-V特性の解析2012
- Author(s)
  青木俊周, 金田直樹, 三島友義, 塩島謙次
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 光応答法によるTi/Alオーミック電極形成初期過程の評価2012
- Author(s)
  出店克顕, 横浜秀雄, 荒木賀行, 塩島謙次
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Effect of ICP Etching in p-type GaN Schottky Contacts2012
- Author(s)
  T. Takahashi, N. Kaneda, T. Mishima, K. Nomoto, and K. Shiojima
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Electrical characteristics of surface stoichiometry controlled p-GaN Schottky contacts2012
- Author(s)
  Kenji Shiojima, Toshifumi Takahashi, Naoki Kaneda, Tomoyoshi Mishima, Takashi Kajiwara, and Satoru Tanaka
- Organizer
  the International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(IsPlasma2012)
- Place of Presentation
  Aich, Japan
- Year and Date
  2012-03-07
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Electrical characteristics of surface stoichiometry controlled p-GaN Schottky contacts2012
- Author(s)
  Kenji Shiojima, Toshifumi Takahashi, Naoki Kaneda, Tomoyoshi Mishima, Takashi Kajiwara, Satoru Tanaka
- Organizer
  th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (IsPlasma2012)
- Place of Presentation
  Aich, Japan
- Year and Date
  2012-03-07
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] p形GaNショットキー接触におけるICPエッチングの影響2012
- Author(s)
  高橋利文金田直樹三島友義野本一貴塩島謙次
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  福井大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 表面ストイキオメトリを制御したp-GaNショットキー接触の電気的特性2012
- Author(s)
  高橋利文金田直樹三島友義梶原隆司田中悟塩島謙次
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  福井大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Evaluation of the initial stage of formation for Ti/Al ohmic contacts by using photoresponse method2012
- Author(s)
  K. Demise, H. Yokohama, G. Araki, and K. Shiojima
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] MOCVD成長p-GaN電子トラップの評価2012
- Author(s)
  本田銀熙,　塩島謙次,　徳田豊
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] p形GaNショットキー接触におけるICPエッチングの影響2012
- Author(s)
  高橋利文, 金田直樹, 三島友貴, 塩島謙次
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Excitation energy dependence of minority carrier transient spectroscopy spectra of n-GaN2012
- Author(s)
  Unhi Honda, Tatsunari Shibata, Yujiro Yamada, Yutaka Tokuda, Kenji Shiojima, Hiroyuki Ueda, Tetsuo Narita, Tsutomu Uesugi, and Tetsu Kac
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies2011
- Author(s)
  U.Honda, Y.Yamada, Y.Tokuda, K.Shiojima
- Organizer
  International conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2011-09-26
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 表面ストイキオメトリを制御したp-GaNショットキー接触の電気的特性2011
- Author(s)
  高橋利文, 出店克顕、塩島謙次
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] GaN上への大面積グラフェン転写およびグラフェン挿入による電極の低抵抗化2011
- Author(s)
  田中浩太郎、下辻康広、橋本明弘、塩島謙次、田中悟
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  福井大学
- Year and Date
  2011-09-17
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Ni/p-GaNショットキー電極におけるMgドーピング濃度依存性の評価2011
- Author(s)
  出店克顕, 塩島謙次
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Evaluation of Mg-doping-concentration dependence for Ni/p-GaN Schottky contacts2011
- Author(s)
  K. Shiojima, K. Demise
- Organizer
  9th International Conference Nitride Semiconductors(ICNS-9)
- Place of Presentation
  Glasgow UK.
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] P型GaN中の深い準位の評価2011
- Author(s)
  山田悠二郎,長谷川晶一,南部大翔,本田銀煕,徳田豊,塩島謙次
- Organizer
  第20回SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  名古屋市
- Year and Date
  2011-12-08
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 一定温度MCTSによるn-GaN中炭素関連深い準位の評価2011
- Author(s)
  山田悠二郎, 横井将大, 坂崎真司, 石倉正也、塩島謙次
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Evaluation of Mg-doping-concentration dependence for Ni/p-GaN Schottky contacts2011
- Author(s)
  K.Shiojima, K.Demise
- Organizer
  9th International Conference Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Graphene formation on GaN substrates and electrical characteristics of metal/graphene/GaN structure2011
- Author(s)
  K. Tanaka, Y. Shimotsuji, S. Tanaka, A. Hashimoto, and K. Shiojima
- Organizer
  Graphene 2011
- Place of Presentation
  Bilbao Spain
- Year and Date
  2011-04-11
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 炭素ドープn-GaN中の深い準位の評価2011
- Author(s)
  山田悠二郎, 横井将大, 坂崎真司^<1>, 石倉正也, 塩島謙次
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies2011
- Author(s)
  U. Honda, Y. Yamada, Y. Tokuda, K. Shiojima
- Organizer
  International conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2011-09-26
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] GaN上への大面積グラフェン転写およびグラフェン挿入による電極の低抵抗化2011
- Author(s)
  田中浩太郎、下辻康広、橋本明弘、塩島謙次、田中悟
- Organizer
  平成23年度電気関係学会北陸支部連合大会
- Place of Presentation
  福井大学
- Year and Date
  2011-09-17
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積転写グラフェン層の顕微ラマン散乱分光測定2010
- Author(s)
  寺崎博満, 塩島謙次, 森田康平, 田中悟, 日比野浩樹, 橋本明弘
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  富山大学
- Year and Date
  2010-09-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] GaN系電子デバイスの信頼性に与える欠陥の影響2010
- Author(s)
  塩島謙次
- Organizer
  (独)日本学術振興会「結晶加工と評価技術」第145委員会第121回研究会
- Place of Presentation
  日明治大学駿河台キャンパス
- Year and Date
  2010-02-23
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 光応答法によるp-GaNショットキー電極の評価2010
- Author(s)
  出店克顕、塩島謙次
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] A1GaN/GaN HEMTの電流コラプスに対する炭素ドーピングの影響2010
- Author(s)
  國塩直樹, 塩島謙次, 秋山一樹, 山田悠二郎, 柴田龍成, 徳田豊
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 炭素ドーピングしたn-GaN中欠陥のDLTS、MCTSによる評価2010
- Author(s)
  山田悠二郎, 塩島謙次, 徳田豊
- Organizer
  第19回SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  つくば市
- Year and Date
  2010-10-21
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 化合物系電子デバイス新技術2010
- Author(s)
  塩島謙次
- Organizer
  (独)日本学術振興会「半導体界面制御技術」第154委員会研究会
- Place of Presentation
  産総研臨海副都心センター別館11階
- Year and Date
  2010-11-25
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 化合物系電子デバイス新技術2010
- Author(s)
  塩島謙次
- Organizer
  独)日本学術振興会「半導体界面制御技術」第154委員会研究会
- Place of Presentation
  東京都招待講演
- Year and Date
  2010-11-25
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] GaN系電子デバイスの信頼性に与える欠陥の影響2010
- Author(s)
  塩島謙次
- Organizer
  (独) 日本学術振興会「結晶加工と評価技術」第145委員会第121回研究会
- Place of Presentation
  明治大学駿河台キャンパス
- Year and Date
  2010-02-23
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] n-GaNの深い準位への炭素の影響2009
- Author(s)
  秋山一樹, 山田悠二郎, 柴田龍成, 徳田豊, 國塩直樹, 塩島謙次
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積グラフェン層の転写法2009
- Author(s)
  寺崎博満, 塩島謙次, 森田康平, 田中悟, 日比野浩樹, 橋本明弘
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Observation of the effect of carbon in defect formation for MOCVD grown n-GaN on SiC substrates2009
- Author(s)
  N. Kunishio, K. Shiojima, K. Akiyama, Y. Yamada, Y. Tokuda
- Organizer
  International Conference Nitride Semiconductors-8(ICNS-8)
- Place of Presentation
  Jeju Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Observation of the effect of carbon in defect formation for MOCVD grown n-GaN on SiC substrates2009
- Author(s)
  國塩直樹, 塩島謙次, 秋山一樹, 山田悠二郎, 徳田豊
- Organizer
  International Conference Nitride Semiconductors-8 (ICNS-8)
- Place of Presentation
  Jeju Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積転写グラフェン層の顕微ラマン散乱分光測定2009
- Author(s)
  寺崎博満, 橋本明弘, 塩島謙次, 森田康平, 田中悟, 日比野浩樹
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山、日本
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積グラフェン層転写過程のLEEM/AFM観察2009
- Author(s)
  森田康平, 寺崎博満, 塩島謙次, 田中悟, 日比野浩樹, 橋本明弘
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積グラフェン層の転写法2009
- Author(s)
  寺崎博満, 橋本明弘, 塩島謙次, 森田康平, 田中悟, 日比野浩樹
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山、日本
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] 転写されたSiC上エピタキシャルグラフェン層の層数・表面構造評価2009
- Author(s)
  上原直也, 寺崎博満, 森田康平, 塩島謙次, 日比野浩樹, 水野清義, 橋本明弘, 田中悟
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山、日本
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] p-GaNショットキー接触のI-V,C-V特性-金属仕事関数依存性-2008
- Author(s)
  福島慶広、荻須啓太, 葛原正明、塩島謙次
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  千葉県習志野市
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-18860031
[Presentation] Ni/p-GaN接触の電気的特性の評価 -Mgドーピング濃度依存性-2007
- Author(s)
  福島慶広、荻須啓太, 葛原正明、塩島謙次
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  札幌市
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-18860031
[Presentation] p-GaNショットキー接触のI-V,C-V特性-金属仕事関数依存性-2007
- Author(s)
  福島慶広、荻須啓太, 葛原正明、塩島謙次
- Organizer
  電気学会電子材料研究会
- Place of Presentation
  福井市
- Year and Date
  2007-11-30
- Data Source
  KAKENHI-PROJECT-18860031
[Presentation] Metal work function dependence of Schottky barrier height measured from I-V and C-V characteristics of p-GaN contacts2007
- Author(s)
  Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, and Kenji Shiojima
- Organizer
  International Conference Nitride Semiconductors-7(ICNS-7)
- Place of Presentation
  米国ラスベガス
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18860031
[Presentation] 金属/p-GaN界面の電流輸送特性と最近の進展2007
- Author(s)
  塩島謙次
- Organizer
  電子情報通信学会、電子デバイス研究会
- Place of Presentation
  富山市
- Year and Date
  2007-06-16
- Data Source
  KAKENHI-PROJECT-18860031
[Presentation] Optimum Rapid Thermal Activation for Mg-doped p-type GaN2007
- Author(s)
  Motoi Nagamori, Shuichi Ito, Hiroshi Saito, Kenji Shiojima, Shuhei Yamada, Naoki Shibata and Masaaki Kuzuhara
- Organizer
  International conference on Solid-State Devices and materials(SSDM)
- Place of Presentation
  茨城県つくば市
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PROJECT-18860031

1. HASHIMOTO Akihiro (10251985)

# of Collaborated Projects: 6 results

# of Collaborated Products: 9 results
2. Ueda Osamu (50418076)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
3. 富永依里子 (40634936)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
4. YAMAMOTO Akio (90210517)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. KUZUHARA Masaaki (20377469)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. FUKUI Kazutoshi (80156752)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. Yamamoto Kohji (70432507)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 池永訓昭 (30512371)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 今林弘毅 (10906324)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. KATO Masashi

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Shiojima Kenji 塩島 謙次

SHIOJIMA Kenji 塩島 謙次

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高電圧印加界面顕微光応答法によるパワー素子用電極エッジの電界集中の2次元的解明Principal Investigator

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Analysis of ohmic metal/semiconductor interfaces by low-temperature SIPMPrincipal Investigator

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Characterization and control of defects in low-temperature-grown Bi-based compound semiconductors for novel terahertz wave emitters and detectors

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Two-dimensional characterization of an initial stage of the degradation of metal/semiconductor interfaces by using scanning internal photoemission microscopy with near-ultra-violet lightPrincipal Investigator

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Evaluation and control of defects in LTG GaAs-related alloy semiconductors for photoconductive antenna of THz wave excited by near infra-red light

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Two-dimensional characterization of degradation mechanism in metal/wide-bandgap semiconductor contacts by scanning internal photoemission microscopyPrincipal Investigator

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Investigation of terahertz time-domain spectroscopy using terahertz superfucusing effect

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2-dimentional mapping of graphene-inserted metal contactsPrincipal Investigator

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Surface passivation of GaN by graphene layersPrincipal Investigator

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Basic Research for Carbon Electronics Devices using Solid C_<60> and/or Graphene

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金属を用いない高耐熱電極に関する研究Principal Investigator

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[Book] Control of Semiconductor Interfaces2020

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[Book] Semiconductor Process Integration 112019

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Shiojima Kenji 塩島謙次

SHIOJIMA Kenji 塩島謙次