Mori Takahiro 森貴洋

… Alternative Names

MORI Takahiro 森貴洋

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Researcher Number	70443041
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究チーム長
Affiliation (based on the past Project Information) *help	2017 – 2019: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 2018: 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員 2016: 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員 2015: 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究員 2014: 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究員 2009: The Institute of Physical and Chemical Research, ナノ電子デバイス研究センター, 産総研特別研究員 2008: The Institute of Physical and Chemical Research, 石橋極微デバイス工学研究室, 協力研究員
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Applied materials / Microdevices/Nanodevices Except Principal Investigator General applied physics / Electron device/Electronic equipment
Keywords	Principal Investigator 集積デバイス / 集積回路 / 量子デバイス / CMOS / 量子ビット / 低消費電力 / スピン量子ビット / 相補型集積回路 / 等電子トラップ / トンネルトランジスタ … More / 固定電荷 / 励起子発光 / 電界効果トランジスタ / 二硫化モリブデン / 遷移金属ダイカルコゲナイド / 絶縁膜界面 / トランジスタ / 発光素子 / 二次元層状物質 / 電子線リソグラフィ / クーロンブロッケイド / イオンビーム / 電子デバイス / 単電子トランジスタ / カーボンナノチューブ … More Except Principal Investigator 量子コンピュータ / 量子ビット / ラビ振動 / スピン・ブロッケード / 電子スピン共鳴 / 単電子トランジスタ / トンネルトランジスタ / 量子ドット / スピンカプラ- / 量子コンピューター / 等電子トラップ / シリコン / トンネルFET / スピンカプラー Less

Creation of spin-coupling technology suitable for Si quantum bit integration
- Principal Investigator
  
  Yasuda Tetsuji
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Quantum-dot devices in silicon-based tunnel field-effect transistors
- Principal Investigator
  
  Moriyama Satoshi
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  General applied physics
- Research Institution
  National Institute for Materials Science
Invention of new functional devices with trap engineering of tunnel field-effect transistorsPrincipal Investigator
- Principal Investigator
  
  Mori Takahiro
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of exciton laser with two-dimensional layered atomically thin filmsPrincipal Investigator
- Principal Investigator
  
  Mori Takahiro
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of carbon nanotube single electron transistors toward single electron circuitsPrincipal Investigator
- Principal Investigator
  
  MORI Takahiro
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  The Institute of Physical and Chemical Research

All 2020 2019 2018 2017 2016 2015 2009 2008 Other

All Journal Article Presentation Book

[Book] 量子コンピュータ／イジング型コンピュータの研究開発最前線2019
- Author(s)
  森貴洋（分担執筆）
- Total Pages
  263
- Publisher
  (株)情報機構
- ISBN
  9784865021653
- Data Source
  KAKENHI-PROJECT-17H01276
[Journal Article] Research Trends in Silicon Quantum Bit Devices2019
- Author(s)
  森貴洋, 樽茶清悟
- Journal Title
  
  Journal of the Japan Society for Precision Engineering
  
  Volume: 85 Issue: 12 Pages: 1052-1056
- DOI
  10.2493/jjspe.85.1052
- NAID
  130007757449
- ISSN
  0912-0289, 1882-675X
- Year and Date
  2019-12-05
- Language
  Japanese
- Data Source
  KAKENHI-PROJECT-17H01276
[Journal Article] Quantum Interferometry with a g-Factor-Tunable Spin Qubit2019
- Author(s)
  K. Ono, S. N. Shevchenko, T. Mori, S. Moriyama, and F. Nori
- Journal Title
  
  Physical Review Letters
  
  Volume: 122 Issue: 20
- DOI
  10.1103/physrevlett.122.207703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01276
[Journal Article] High-temperature operation of a silicon qubit2019
- Author(s)
  [K. Ono, T. Mori, S. Moriyama
- Journal Title
  
  Scientific reports
  
  Volume: 9 Issue: 1 Pages: 469-469
- DOI
  10.1038/s41598-018-36476-z
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H04000, KAKENHI-PROJECT-16H03900, KAKENHI-PROJECT-17H01276
[Journal Article] Effect of post-implantation annealing on Al?N isoelectronic trap formation in silicon: Al?N pair formation and defect recovery mechanisms2018
- Author(s)
  Mori Takahiro、Morita Yukinori、Matsukawa Takashi
- Journal Title
  
  AIP Advances
  
  Volume: 8 Issue: 5 Pages: 055024-055024
- DOI
  10.1063/1.5030795
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H01276
[Journal Article] Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current2018
- Author(s)
  Mori Takahiro、Asai Hidehiro、Fukuda Koichi、Matsukawa Takashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FA04-04FA04
- DOI
  10.7567/jjap.57.04fa04
- NAID
  210000148852
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05526
[Journal Article] 等電子トラップ技術によるオン電流増大に伴う相補型トンネルトランジスタ回路の性能向上2017
- Author(s)
  森貴洋、浅井栄大、服部淳一、福田浩一、大塚慎太郎、森田行則、大内真一、更田裕司、右田真司、水林亘、太田裕之、松川貴
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 116(448) Pages: 1-4
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05526
[Journal Article] Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability2017
- Author(s)
  T. Mori, S. Migita, K. Fukuda, H. Asai, Y. Morita, W. Mizubayashi, Y. Liu, S. O'uchi, H. Fuketa, S. Otsuka, T. Yasuda, M. Masahara, H. Ota, and T. Matsukawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 4S Pages: 04CD02-04CD02
- DOI
  10.7567/jjap.56.04cd02
- NAID
  210000147562
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05526
[Journal Article] Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology2017
- Author(s)
  T. Mori, S. Iizuka, T. Nakayama
- Journal Title
  
  MRS communications
  
  Volume: 7 Issue: 3 Pages: 541-550
- DOI
  10.1557/mrc.2017.63
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K05488, KAKENHI-PROJECT-15H05526
[Journal Article] Demonstrating Performance Improvement of Complementary TFET Circuits by I_ON Enhancement Based on Isoelectronic Trap Technology2016
- Author(s)
  T. Mori, H. Asai, J. Hattori, K. Fukuda, S. Otsuka, Y. Morita, S. O’uchi, H. Fuketa, S. Migita, W. Mizubayashi, H. Ota, and T. Matsukawa
- Journal Title
  
  Technical Digest of International Electron Devices Meeting
  
  Volume: 2016 Pages: 512-515
- DOI
  10.1109/iedm.2016.7838453
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05526
[Journal Article] Characterization of Effective Mobility and its Degradation Mechanism in MoS2 MOSFETs2016
- Author(s)
  Takahiro Mori, Naruki Ninomiya, Toshitaka Kubo, Noriyuki Uchida, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka, and Atsushi Ando
- Journal Title
  
  IEEE Transactions on Nanotechnology
  
  Volume: 未定
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26600081
[Journal Article] Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching2015
- Author(s)
  N. Ninomiya, T. Mori, N. Uchida, E. Watanabe, D. Tsuya, S. Moriyama, M. Tanaka, and A. Ando
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4 Pages: 046502-046502
- DOI
  10.7567/jjap.54.046502
- NAID
  210000144937
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26600081
[Journal Article] Higher temperature operation of the single electron transistors based on single-wall carbon nanotubes2009
- Author(s)
  Takahiro Mori
- Journal Title
  
  Sensors and Materials 21
  
  Pages: 385-391
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20710110
[Journal Article] Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique2009
- Author(s)
  Takahiro Mori
- Journal Title
  
  Journal of Vacuum Science and Technology B 27(in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20710110
[Journal Article] Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique2009
- Author(s)
  T. Mori, S. Sato, K. Omura, S. Yajima, Y. Tsuruoka, Y. Achiba, K. Ishibashi
- Journal Title
  
  Journal of Vacuum Science and Technology B 27
  
  Pages: 795-798
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20710110
[Journal Article] Higher temperature operation of the single electron transistors based on single-wall carbon nanotubes2009
- Author(s)
  T. Mori, S. Sato, K. Omura, S. Yajima, Y. Tsuruoka, K. Uchida, Y. Achiba, H. Yajima, K. Ishibashi
- Journal Title
  
  Sensors and Materials 21
  
  Pages: 385-391
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20710110
[Presentation] Development of simulator for silicon quantum dot devices based on technology computer aided design (TCAD)2020
- Author(s)
  Hidehiro Asai, Shota Iizuka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, and Takahiro Mori
- Organizer
  APS March Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] シリコン量子コンピュータの研究開発動向2020
- Author(s)
  森貴洋
- Organizer
  第67回応用物理学会春期学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] シリコン量子コンピュータの研究開発動向2020
- Author(s)
  森貴洋
- Organizer
  非ノイマン型情報処理へ向けたデバイス技術分科会（一般社団法人電子情報産業協会）
- Invited
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] Cryogenic Characterization of Low-frequency Noise in Silicon CMOS Transistors2019
- Author(s)
  Hiroshi Oka, Takashi Matsukawa, and Takahiro Mori
- Organizer
  Topical Conference on Quantum Computing 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] Development of Simulation System for Semiconductor Qubit Design based on Technology Computer Aided Design2019
- Author(s)
  Hidehiro Asai, Shota Iizuka, Junichi Hattori, Koichi Fukuda, and Takahiro Mori
- Organizer
  Topical Conference on Quantum Computing 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] 集積化に適したシリコン量子ビット素子の開発2019
- Author(s)
  森貴洋
- Organizer
  新世代コンピューティングシンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] A high-temperature silicon qubit and its quantum interference2019
- Author(s)
  K. Ono, T. Mori, S. Moriyama, S. Shevchenko, and F. Nori
- Organizer
  2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] Spin Qubits in Silicon Tunnel Field-Effect Transistors2019
- Author(s)
  S. Moriyama, T. Mori, and K. Ono
- Organizer
  World Materials Research Institute Forum 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] Spin qubits based on silicon tunnel field-effect transistors2019
- Author(s)
  Satoshi Moriyama
- Organizer
  Topical Conference on Quantum Computing 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] A single spin-1/2 as a “heat engine” exhibiting quantum interferometry2019
- Author(s)
  S. Shevchenko, K. Ono, T. Mori, S. Moriyama, and F. Nori
- Organizer
  International School and Symposium on Nanoscale Transport and Photonics 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] シリコン技術による室温動作量子計算機への挑戦2018
- Author(s)
  森貴洋、大野圭司
- Organizer
  理化学研究所・産業技術総合研究所　合同シンポジウム
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] スピンブロッケード状態にある2つのスピンのラビ振動とその相関2018
- Author(s)
  大野圭司、森貴洋、森山悟士
- Organizer
  2018年日本物理学会秋季大会
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] シリコントンネルトランジスタのスピン量子ビット応用2018
- Author(s)
  森貴洋、森山悟士、松川貴、安田哲二、大野圭司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] シリコントンネルトランジスタのスピン量子ビット応用2018
- Author(s)
  森貴洋，森山悟士，松川貴，安田哲二，大野圭司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H03900
[Presentation] ON-current boosting technology for silicon tunnel field-effect transistors2018
- Author(s)
  Takahiro Mori
- Organizer
  NANOTECH Malaysia 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] シリコン量子コンピュータの研究開発動向2018
- Author(s)
  森貴洋
- Organizer
  研究産業技術懇談会
- Invited
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] シリコントンネルトランジスタのスピン量子ビット応用2018
- Author(s)
  森貴洋、森山悟士、松川貴、安田哲二、大野圭司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] Quantum-dot transport via deep levels in silicon tunnel field-effect transistors (TFETs)2017
- Author(s)
  Satoshi Moriyama, Takahiro Mori, Keiji Ono
- Organizer
  ICDS 2017, 29th International Conference on Defects in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03900
[Presentation] ON Current Boosting Technology for Si-based Tunnel Field-Effect Transistors Utilizing Isoelectronic Trap2017
- Author(s)
  Takahiro Mori
- Organizer
  2017 MRS Spring Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] Improvement of Device and Circuit Performance of Si-based Tunnel Field-Effect Transistors by Utilizing Isoelectronic Trap Technology2017
- Author(s)
  Takahiro Mori, Hidehiro Asai, Takashi Matsukawa
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] スピン量子ビットによるMotion averaging2017
- Author(s)
  大野圭司, 森貴洋, 森山悟士
- Organizer
  日本物理学会第72回年次大会
- Place of Presentation
  大阪大学
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PROJECT-16H03900
[Presentation] 等電子トラップ技術によるオン電流増大に伴う相補型トンネルトランジスタ回路の性能向上2017
- Author(s)
  森貴洋
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  東京都・港区
- Invited
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] Quantum dots and spin qubits based on silicon tunnel field-effect transistors2017
- Author(s)
  Satoshi Moriyama, Takahiro Mori, Keiji Ohno
- Organizer
  2017 Workshop in Innovative Nanoscale Devices and Systems
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] Room temperature single electron transistor and spin qubit operation up to 10 K in silicon tunnel field-effect transistor (TFET)2017
- Author(s)
  Keiji Ono, Takahiro Mori, Satoshi Moriyama
- Organizer
  QTech 2017, International Workshop on Quantum Technologies
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03900
[Presentation] 等電子トラップ技術による相補型TFET回路の特性向上2017
- Author(s)
  森貴洋、浅井栄大、服部淳一、福田浩一、大塚慎太郎、森田行則、大内真一、更田裕司、右田真司、水林亘、太田裕之、松川貴
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県・横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] Quantum-dot Transport via Deep levels in Silicon Tunnel Field-effect Transistors (TFETs)2017
- Author(s)
  Satoshi Moriyama, Takahiro Mori, Keiji Ohno
- Organizer
  29th International Conference on Defects in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] トンネルトランジスタを利用した高温動作量子ビットの開発2017
- Author(s)
  森貴洋、大野圭司
- Organizer
  理研－産総研第三回量子技術イノベーションコアワークショップ
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] Quantum dots and spin qubits based on silicon tunnel field-effect transistors2017
- Author(s)
  Satoshi Moriyama, Takahiro Mori, Keiji Ono
- Organizer
  WINDS 2017, 2017 Workshop in Innovative Nanoscale Devices and Systems
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03900
[Presentation] 等電子トラップ技術によるシリコントンネルFETの機能開拓：ロジックLSIおよび量子計算機への展開2017
- Author(s)
  森貴洋、浅井栄大、松川貴
- Organizer
  理研－産総研第三回量子技術イノベーションコアワークショップ
- Data Source
  KAKENHI-PROJECT-17H01276
[Presentation] Single-electron spin control in CMOS-compatible tunnel field-effect transistors (TFETs)2017
- Author(s)
  Satoshi Moriyama, Takahiro Mori, Keiji Ono
- Organizer
  MANA International Symposium 2017
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2017-02-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03900
[Presentation] Quantum-dot transport and spin effects in silicon-based tunnel field-effect transistors (TFETs)2016
- Author(s)
  Satoshi Moriyama, Takahiro Mori, Keiji Ono
- Organizer
  PASPS 9, 9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids
- Place of Presentation
  Kobe, Japan
- Year and Date
  2016-08-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03900
[Presentation] Demonstrating Performance Improvement of Complementary TFET Circuits by I_ON Enhancement Based on Isoelectronic Trap Technology2016
- Author(s)
  T. Mori, H. Asai, J. Hattori, K. Fukuda, S. Otsuka, Y. Morita, S. O’uchi, H. Fuketa, S. Migita, W. Mizubayashi, H. Ota, and T. Matsukawa
- Organizer
  International Electron Devices Meeting 2016
- Place of Presentation
  アメリカ合衆国・サンフランシスコ
- Year and Date
  2016-12-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] MoS2デバイスの現状と展望2016
- Author(s)
  森貴洋
- Organizer
  日本学術振興会ナノプローブテクノロジー第167委員会研究会
- Place of Presentation
  東京都
- Year and Date
  2016-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-26600081
[Presentation] 等電子トラップを導入したTFETのばらつき評価2016
- Author(s)
  森貴洋、右田真司、福田浩一、浅井栄大、森田行則、水林亘、柳永勛、大内真一、更田裕司、大塚慎太郎、安田哲二、昌原明植、太田裕之、松川貴
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟県・新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] On the Variability of Tunnel Field-Effect Transistors: Suppression of BTBT Fluctuation by Tunneling Probability Enhancement2016
- Author(s)
  T. Mori, S. Migita, K. Fukuda, H. Asai, Y. Morita, W. Mizubayashi, Y. Liu, S. O'uchi, H. Fuketa, S. Otsuka, T. Yasuda, M. Masahara, H. Ota, and T. Matsukawa
- Organizer
  International Conference on Solid State Devices and Materials 2016
- Place of Presentation
  茨城県・つくば市
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] Quantum-dot devices in CMOS-compatible tunnel field-effect transistors (TFETs)2016
- Author(s)
  Satoshi Moriyama, Takahiro Mori, Keiji Ono
- Organizer
  Quantum-CMOS Integration Technology (QCIT) Workshop 2016
- Place of Presentation
  Delft, Netherlands
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03900
[Presentation] 二次元原子膜のトランジスタ応用2016
- Author(s)
  森貴洋
- Organizer
  2016年真空・表面科学合同講演会
- Place of Presentation
  名古屋市
- Year and Date
  2016-11-29
- Invited
- Data Source
  KAKENHI-PROJECT-26600081
[Presentation] New ON current Boosting Technology in Silicon-based Tunnel Field-Effect Transistors Utilizing Isoelectronic Trap2016
- Author(s)
  Takahiro Mori
- Organizer
  EMN Meeting on Field-Effect Transistors
- Place of Presentation
  台湾・高雄
- Year and Date
  2016-03-15
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] シリコントンネルトランジスタにおける深い準位を介した単一電子輸送とマイクロ波応答2016
- Author(s)
  森山悟士, 森貴洋, 大野圭司
- Organizer
  日本物理学会2016年秋季大会
- Place of Presentation
  金沢大学
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H03900
[Presentation] 遷移金属ダイカルコゲナイドの極薄ボディMOSFET応用2015
- Author(s)
  森貴洋、二之宮成樹、内田紀行、久保利隆、渡辺英一郎、津谷大樹、森山悟士、田中正俊、安藤淳
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市
- Year and Date
  2015-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-26600081
[Presentation] High-k/MetalゲートMoS2 MOSFETの試作と評価2015
- Author(s)
  森貴洋、二之宮成樹、内田紀行、久保利隆、渡辺英一郎、津谷大樹、森山悟士、田中正俊、安藤淳
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  名古屋市
- Year and Date
  2015-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-26600081
[Presentation] Characterization of the effective mobility by split C-V technique in MoS2 MOSFETs with high-k/metal gate2015
- Author(s)
  Takahiro Mori, Naruki Ninomiya, Toshitaka Kubo, Noriyuki Uchida, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka, and Atsushi Ando
- Organizer
  2015 IEEE International Conference on Nanotechnology
- Place of Presentation
  イタリア・ローマ
- Year and Date
  2015-07-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600081
[Presentation] ON current boosting in Silicon-based Tunnel FETs Utilizing Isoelectronic Trap Technology2015
- Author(s)
  Takahiro Mori
- Organizer
  2015 International Workshop on Dielectric Thin Films for Future Electron Devices
- Place of Presentation
  東京都江東区
- Year and Date
  2015-11-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05526
[Presentation] Arイオンビーム部分照射によるhigh-EC SWCNT-SETの形成2009
- Author(s)
  森貴洋、鶴岡泰広、阿知波洋次、石橋幸治
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-20710110
[Presentation] Barrier formation technique using low energy Ar ion irradiation to form wide temperature range operable SWCNT-SET2009
- Author(s)
  Takahiro Mori
- Organizer
  9^<th> IEEE Conference on Nanotechnology
- Place of Presentation
  Genoa, Italy
- Year and Date
  2009-07-26
- Data Source
  KAKENHI-PROJECT-20710110
[Presentation] Barrier formation technique using low energy Ar ion irradiation to form wide temperature range operable SWCNT-SET2009
- Author(s)
  T. Mori, Y. Tsuruoka, Y. Achiba, K. Ishibashi
- Organizer
  9th IEEE Conference on Nanotechnology
- Place of Presentation
  Genoa, Italy
- Data Source
  KAKENHI-PROJECT-20710110
[Presentation] Arイオンビーム部分照射によるhigh-EC SWCNT-SETの形成2008
- Author(s)
  森貴洋
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-20710110
[Presentation] Formation of Single Electron Transistors in Single-Walled Carbon Nanotubes with Low Energy Ar Ion Irradiation Technique2008
- Author(s)
  T. Mori, S. Sato, K. Omura, S. Yajima, Y. Tsuruoka, Y. Achiba, K. Ishibashi
- Organizer
  International Conference on Nanoscience and Technology 2008
- Place of Presentation
  Keystone, USA
- Data Source
  KAKENHI-PROJECT-20710110
[Presentation] Investigation of Electrical Characteristics on Top-gate MoS2 MOSFETs with high-k Al2O3 dielectric
- Author(s)
  N. Ninomiya, T. Mori, N. Uchida, E. Watanabe, D. Tsuya, S. Moriyama, M. Tanaka, and A. Ando
- Organizer
  27th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2014-11-04 – 2014-11-07
- Data Source
  KAKENHI-PROJECT-26600081
[Presentation] HfO2絶縁膜を用いたMoS2 FETにおける実効移動度の評価
- Author(s)
  二之宮成樹，森貴洋, 内田紀行, 久保利隆, 渡辺英一郎, 津谷大樹, 森山悟士, 田中正俊, 安藤淳
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26600081

1. Ono Keiji (00302802)

# of Collaborated Projects: 2 results

# of Collaborated Products: 18 results
2. Moriyama Satoshi (00415324)

# of Collaborated Projects: 2 results

# of Collaborated Products: 18 results
3. Yasuda Tetsuji (90220152)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
4. 伊藤公平 (30276414)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. NINOMIYA Naruki

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
6. 中山隆史

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Mori Takahiro 森 貴洋

MORI Takahiro 森 貴洋

Research Projects

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Co-Researchers

Creation of spin-coupling technology suitable for Si quantum bit integration

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Quantum-dot devices in silicon-based tunnel field-effect transistors

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Invention of new functional devices with trap engineering of tunnel field-effect transistorsPrincipal Investigator

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Development of exciton laser with two-dimensional layered atomically thin filmsPrincipal Investigator

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Development of carbon nanotube single electron transistors toward single electron circuitsPrincipal Investigator

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[Book] 量子コンピュータ／イジング型コンピュータの研究開発最前線2019

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[Journal Article] Research Trends in Silicon Quantum Bit Devices2019

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[Journal Article] Quantum Interferometry with a g-Factor-Tunable Spin Qubit2019

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[Journal Article] High-temperature operation of a silicon qubit2019

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[Journal Article] Effect of post-implantation annealing on Al?N isoelectronic trap formation in silicon: Al?N pair formation and defect recovery mechanisms2018

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[Journal Article] Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current2018

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[Journal Article] 等電子トラップ技術によるオン電流増大に伴う相補型トンネルトランジスタ回路の性能向上2017

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[Journal Article] Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability2017

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Mori Takahiro 森貴洋

MORI Takahiro 森貴洋