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Mori Takahiro  森 貴洋

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MORI Takahiro  森 貴洋

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Researcher Number 70443041
Other IDs
Affiliation (Current) 2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究チーム長
Affiliation (based on the past Project Information) *help 2017 – 2019: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
2018: 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員
2016: 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員
2015: 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究員
2014: 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究員
2009: The Institute of Physical and Chemical Research, ナノ電子デバイス研究センター, 産総研特別研究員
2008: The Institute of Physical and Chemical Research, 石橋極微デバイス工学研究室, 協力研究員
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Applied materials / Microdevices/Nanodevices
Except Principal Investigator
General applied physics / Electron device/Electronic equipment
Keywords
Principal Investigator
集積デバイス / 集積回路 / 量子デバイス / CMOS / 量子ビット / 低消費電力 / スピン量子ビット / 相補型集積回路 / 等電子トラップ / トンネルトランジスタ … More / 固定電荷 / 励起子発光 / 電界効果トランジスタ / 二硫化モリブデン / 遷移金属ダイカルコゲナイド / 絶縁膜界面 / トランジスタ / 発光素子 / 二次元層状物質 / 電子線リソグラフィ / クーロンブロッケイド / イオンビーム / 電子デバイス / 単電子トランジスタ / カーボンナノチューブ … More
Except Principal Investigator
量子コンピュータ / 量子ビット / ラビ振動 / スピン・ブロッケード / 電子スピン共鳴 / 単電子トランジスタ / トンネルトランジスタ / 量子ドット / スピンカプラ- / 量子コンピューター / 等電子トラップ / シリコン / トンネルFET / スピンカプラー Less
  • Research Projects

    (5 results)
  • Research Products

    (66 results)
  • Co-Researchers

    (6 People)
  •  Creation of spin-coupling technology suitable for Si quantum bit integration

    • Principal Investigator
      Yasuda Tetsuji
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  Quantum-dot devices in silicon-based tunnel field-effect transistors

    • Principal Investigator
      Moriyama Satoshi
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      General applied physics
    • Research Institution
      National Institute for Materials Science
  •  Invention of new functional devices with trap engineering of tunnel field-effect transistorsPrincipal Investigator

    • Principal Investigator
      Mori Takahiro
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  Development of exciton laser with two-dimensional layered atomically thin filmsPrincipal Investigator

    • Principal Investigator
      Mori Takahiro
    • Project Period (FY)
      2014 – 2015
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Applied materials
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  Development of carbon nanotube single electron transistors toward single electron circuitsPrincipal Investigator

    • Principal Investigator
      MORI Takahiro
    • Project Period (FY)
      2008 – 2009
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Microdevices/Nanodevices
    • Research Institution
      The Institute of Physical and Chemical Research

All 2020 2019 2018 2017 2016 2015 2009 2008 Other

All Journal Article Presentation Book

  • [Book] 量子コンピュータ/イジング型コンピュータの研究開発最前線2019

    • Author(s)
      森貴洋(分担執筆)
    • Total Pages
      263
    • Publisher
      (株)情報機構
    • ISBN
      9784865021653
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Journal Article] Research Trends in Silicon Quantum Bit Devices2019

    • Author(s)
      森貴洋, 樽茶清悟
    • Journal Title

      Journal of the Japan Society for Precision Engineering

      Volume: 85 Issue: 12 Pages: 1052-1056

    • DOI

      10.2493/jjspe.85.1052

    • NAID

      130007757449

    • ISSN
      0912-0289, 1882-675X
    • Year and Date
      2019-12-05
    • Language
      Japanese
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Journal Article] Quantum Interferometry with a g-Factor-Tunable Spin Qubit2019

    • Author(s)
      K. Ono, S. N. Shevchenko, T. Mori, S. Moriyama, and F. Nori
    • Journal Title

      Physical Review Letters

      Volume: 122 Issue: 20

    • DOI

      10.1103/physrevlett.122.207703

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Journal Article] High-temperature operation of a silicon qubit2019

    • Author(s)
      [K. Ono, T. Mori, S. Moriyama
    • Journal Title

      Scientific reports

      Volume: 9 Issue: 1 Pages: 469-469

    • DOI

      10.1038/s41598-018-36476-z

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-15H04000, KAKENHI-PROJECT-16H03900, KAKENHI-PROJECT-17H01276
  • [Journal Article] Effect of post-implantation annealing on Al?N isoelectronic trap formation in silicon: Al?N pair formation and defect recovery mechanisms2018

    • Author(s)
      Mori Takahiro、Morita Yukinori、Matsukawa Takashi
    • Journal Title

      AIP Advances

      Volume: 8 Issue: 5 Pages: 055024-055024

    • DOI

      10.1063/1.5030795

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Journal Article] Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current2018

    • Author(s)
      Mori Takahiro、Asai Hidehiro、Fukuda Koichi、Matsukawa Takashi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Issue: 4S Pages: 04FA04-04FA04

    • DOI

      10.7567/jjap.57.04fa04

    • NAID

      210000148852

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Journal Article] 等電子トラップ技術によるオン電流増大に伴う相補型トンネルトランジスタ回路の性能向上2017

    • Author(s)
      森貴洋、浅井栄大、服部淳一、福田浩一、大塚慎太郎、森田行則、大内真一、更田裕司、右田真司、水林亘、太田裕之、松川貴
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 116(448) Pages: 1-4

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Journal Article] Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability2017

    • Author(s)
      T. Mori, S. Migita, K. Fukuda, H. Asai, Y. Morita, W. Mizubayashi, Y. Liu, S. O'uchi, H. Fuketa, S. Otsuka, T. Yasuda, M. Masahara, H. Ota, and T. Matsukawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 Issue: 4S Pages: 04CD02-04CD02

    • DOI

      10.7567/jjap.56.04cd02

    • NAID

      210000147562

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Journal Article] Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology2017

    • Author(s)
      T. Mori, S. Iizuka, T. Nakayama
    • Journal Title

      MRS communications

      Volume: 7 Issue: 3 Pages: 541-550

    • DOI

      10.1557/mrc.2017.63

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-17K05488, KAKENHI-PROJECT-15H05526
  • [Journal Article] Demonstrating Performance Improvement of Complementary TFET Circuits by I_ON Enhancement Based on Isoelectronic Trap Technology2016

    • Author(s)
      T. Mori, H. Asai, J. Hattori, K. Fukuda, S. Otsuka, Y. Morita, S. O’uchi, H. Fuketa, S. Migita, W. Mizubayashi, H. Ota, and T. Matsukawa
    • Journal Title

      Technical Digest of International Electron Devices Meeting

      Volume: 2016 Pages: 512-515

    • DOI

      10.1109/iedm.2016.7838453

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Journal Article] Characterization of Effective Mobility and its Degradation Mechanism in MoS2 MOSFETs2016

    • Author(s)
      Takahiro Mori, Naruki Ninomiya, Toshitaka Kubo, Noriyuki Uchida, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka, and Atsushi Ando
    • Journal Title

      IEEE Transactions on Nanotechnology

      Volume: 未定

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26600081
  • [Journal Article] Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching2015

    • Author(s)
      N. Ninomiya, T. Mori, N. Uchida, E. Watanabe, D. Tsuya, S. Moriyama, M. Tanaka, and A. Ando
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4 Pages: 046502-046502

    • DOI

      10.7567/jjap.54.046502

    • NAID

      210000144937

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26600081
  • [Journal Article] Higher temperature operation of the single electron transistors based on single-wall carbon nanotubes2009

    • Author(s)
      Takahiro Mori
    • Journal Title

      Sensors and Materials 21

      Pages: 385-391

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20710110
  • [Journal Article] Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique2009

    • Author(s)
      Takahiro Mori
    • Journal Title

      Journal of Vacuum Science and Technology B 27(in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20710110
  • [Journal Article] Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique2009

    • Author(s)
      T. Mori, S. Sato, K. Omura, S. Yajima, Y. Tsuruoka, Y. Achiba, K. Ishibashi
    • Journal Title

      Journal of Vacuum Science and Technology B 27

      Pages: 795-798

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20710110
  • [Journal Article] Higher temperature operation of the single electron transistors based on single-wall carbon nanotubes2009

    • Author(s)
      T. Mori, S. Sato, K. Omura, S. Yajima, Y. Tsuruoka, K. Uchida, Y. Achiba, H. Yajima, K. Ishibashi
    • Journal Title

      Sensors and Materials 21

      Pages: 385-391

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20710110
  • [Presentation] Development of simulator for silicon quantum dot devices based on technology computer aided design (TCAD)2020

    • Author(s)
      Hidehiro Asai, Shota Iizuka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, and Takahiro Mori
    • Organizer
      APS March Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] シリコン量子コンピュータの研究開発動向2020

    • Author(s)
      森貴洋
    • Organizer
      第67回応用物理学会春期学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] シリコン量子コンピュータの研究開発動向2020

    • Author(s)
      森貴洋
    • Organizer
      非ノイマン型情報処理へ向けたデバイス技術分科会(一般社団法人電子情報産業協会)
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] Cryogenic Characterization of Low-frequency Noise in Silicon CMOS Transistors2019

    • Author(s)
      Hiroshi Oka, Takashi Matsukawa, and Takahiro Mori
    • Organizer
      Topical Conference on Quantum Computing 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] Development of Simulation System for Semiconductor Qubit Design based on Technology Computer Aided Design2019

    • Author(s)
      Hidehiro Asai, Shota Iizuka, Junichi Hattori, Koichi Fukuda, and Takahiro Mori
    • Organizer
      Topical Conference on Quantum Computing 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] 集積化に適したシリコン量子ビット素子の開発2019

    • Author(s)
      森貴洋
    • Organizer
      新世代コンピューティングシンポジウム
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] A high-temperature silicon qubit and its quantum interference2019

    • Author(s)
      K. Ono, T. Mori, S. Moriyama, S. Shevchenko, and F. Nori
    • Organizer
      2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] Spin Qubits in Silicon Tunnel Field-Effect Transistors2019

    • Author(s)
      S. Moriyama, T. Mori, and K. Ono
    • Organizer
      World Materials Research Institute Forum 2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] Spin qubits based on silicon tunnel field-effect transistors2019

    • Author(s)
      Satoshi Moriyama
    • Organizer
      Topical Conference on Quantum Computing 2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] A single spin-1/2 as a “heat engine” exhibiting quantum interferometry2019

    • Author(s)
      S. Shevchenko, K. Ono, T. Mori, S. Moriyama, and F. Nori
    • Organizer
      International School and Symposium on Nanoscale Transport and Photonics 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] シリコン技術による室温動作量子計算機への挑戦2018

    • Author(s)
      森貴洋、大野圭司
    • Organizer
      理化学研究所・産業技術総合研究所 合同シンポジウム
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] スピンブロッケード状態にある2つのスピンのラビ振動とその相関2018

    • Author(s)
      大野圭司、森貴洋、森山悟士
    • Organizer
      2018年日本物理学会秋季大会
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] シリコントンネルトランジスタのスピン量子ビット応用2018

    • Author(s)
      森貴洋、森山悟士、松川貴、安田哲二、大野圭司
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] シリコントンネルトランジスタのスピン量子ビット応用2018

    • Author(s)
      森 貴洋,森山悟士,松川 貴,安田哲二,大野圭司
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H03900
  • [Presentation] ON-current boosting technology for silicon tunnel field-effect transistors2018

    • Author(s)
      Takahiro Mori
    • Organizer
      NANOTECH Malaysia 2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] シリコン量子コンピュータの研究開発動向2018

    • Author(s)
      森貴洋
    • Organizer
      研究産業技術懇談会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] シリコントンネルトランジスタのスピン量子ビット応用2018

    • Author(s)
      森貴洋、森山悟士、松川貴、安田哲二、大野圭司
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] Quantum-dot transport via deep levels in silicon tunnel field-effect transistors (TFETs)2017

    • Author(s)
      Satoshi Moriyama, Takahiro Mori, Keiji Ono
    • Organizer
      ICDS 2017, 29th International Conference on Defects in Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03900
  • [Presentation] ON Current Boosting Technology for Si-based Tunnel Field-Effect Transistors Utilizing Isoelectronic Trap2017

    • Author(s)
      Takahiro Mori
    • Organizer
      2017 MRS Spring Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] Improvement of Device and Circuit Performance of Si-based Tunnel Field-Effect Transistors by Utilizing Isoelectronic Trap Technology2017

    • Author(s)
      Takahiro Mori, Hidehiro Asai, Takashi Matsukawa
    • Organizer
      2017 International Conference on Solid State Devices and Materials
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] スピン量子ビットによるMotion averaging2017

    • Author(s)
      大野圭司, 森 貴洋, 森山悟士
    • Organizer
      日本物理学会第72回年次大会
    • Place of Presentation
      大阪大学
    • Year and Date
      2017-03-17
    • Data Source
      KAKENHI-PROJECT-16H03900
  • [Presentation] 等電子トラップ技術によるオン電流増大に伴う相補型トンネルトランジスタ回路の性能向上2017

    • Author(s)
      森貴洋
    • Organizer
      電子情報通信学会シリコン材料・デバイス研究会
    • Place of Presentation
      東京都・港区
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] Quantum dots and spin qubits based on silicon tunnel field-effect transistors2017

    • Author(s)
      Satoshi Moriyama, Takahiro Mori, Keiji Ohno
    • Organizer
      2017 Workshop in Innovative Nanoscale Devices and Systems
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] Room temperature single electron transistor and spin qubit operation up to 10 K in silicon tunnel field-effect transistor (TFET)2017

    • Author(s)
      Keiji Ono, Takahiro Mori, Satoshi Moriyama
    • Organizer
      QTech 2017, International Workshop on Quantum Technologies
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03900
  • [Presentation] 等電子トラップ技術による相補型TFET回路の特性向上2017

    • Author(s)
      森貴洋、浅井栄大、服部淳一、福田浩一、大塚慎太郎、森田行則、大内真一、更田裕司、右田真司、水林亘、太田裕之、松川貴
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川県・横浜市
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] Quantum-dot Transport via Deep levels in Silicon Tunnel Field-effect Transistors (TFETs)2017

    • Author(s)
      Satoshi Moriyama, Takahiro Mori, Keiji Ohno
    • Organizer
      29th International Conference on Defects in Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] トンネルトランジスタを利用した高温動作量子ビットの開発2017

    • Author(s)
      森貴洋、大野圭司
    • Organizer
      理研-産総研 第三回 量子技術イノベーションコアワークショップ
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] Quantum dots and spin qubits based on silicon tunnel field-effect transistors2017

    • Author(s)
      Satoshi Moriyama, Takahiro Mori, Keiji Ono
    • Organizer
      WINDS 2017, 2017 Workshop in Innovative Nanoscale Devices and Systems
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03900
  • [Presentation] 等電子トラップ技術によるシリコントンネルFETの機能開拓:ロジックLSIおよび量子計算機への展開2017

    • Author(s)
      森貴洋、浅井栄大、松川貴
    • Organizer
      理研-産総研 第三回 量子技術イノベーションコアワークショップ
    • Data Source
      KAKENHI-PROJECT-17H01276
  • [Presentation] Single-electron spin control in CMOS-compatible tunnel field-effect transistors (TFETs)2017

    • Author(s)
      Satoshi Moriyama, Takahiro Mori, Keiji Ono
    • Organizer
      MANA International Symposium 2017
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2017-02-28
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03900
  • [Presentation] Quantum-dot transport and spin effects in silicon-based tunnel field-effect transistors (TFETs)2016

    • Author(s)
      Satoshi Moriyama, Takahiro Mori, Keiji Ono
    • Organizer
      PASPS 9, 9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids
    • Place of Presentation
      Kobe, Japan
    • Year and Date
      2016-08-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03900
  • [Presentation] Demonstrating Performance Improvement of Complementary TFET Circuits by I_ON Enhancement Based on Isoelectronic Trap Technology2016

    • Author(s)
      T. Mori, H. Asai, J. Hattori, K. Fukuda, S. Otsuka, Y. Morita, S. O’uchi, H. Fuketa, S. Migita, W. Mizubayashi, H. Ota, and T. Matsukawa
    • Organizer
      International Electron Devices Meeting 2016
    • Place of Presentation
      アメリカ合衆国・サンフランシスコ
    • Year and Date
      2016-12-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] MoS2デバイスの現状と展望2016

    • Author(s)
      森貴洋
    • Organizer
      日本学術振興会ナノプローブテクノロジー第167委員会研究会
    • Place of Presentation
      東京都
    • Year and Date
      2016-06-19
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600081
  • [Presentation] 等電子トラップを導入したTFETのばらつき評価2016

    • Author(s)
      森貴洋、右田真司、福田浩一、浅井栄大、森田行則、水林亘、柳永勛、大内真一、 更田裕司、大塚慎太郎、安田哲二、昌原明植、太田裕之、松川貴
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      新潟県・新潟市
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] On the Variability of Tunnel Field-Effect Transistors: Suppression of BTBT Fluctuation by Tunneling Probability Enhancement2016

    • Author(s)
      T. Mori, S. Migita, K. Fukuda, H. Asai, Y. Morita, W. Mizubayashi, Y. Liu, S. O'uchi, H. Fuketa, S. Otsuka, T. Yasuda, M. Masahara, H. Ota, and T. Matsukawa
    • Organizer
      International Conference on Solid State Devices and Materials 2016
    • Place of Presentation
      茨城県・つくば市
    • Year and Date
      2016-09-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] Quantum-dot devices in CMOS-compatible tunnel field-effect transistors (TFETs)2016

    • Author(s)
      Satoshi Moriyama, Takahiro Mori, Keiji Ono
    • Organizer
      Quantum-CMOS Integration Technology (QCIT) Workshop 2016
    • Place of Presentation
      Delft, Netherlands
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03900
  • [Presentation] 二次元原子膜のトランジスタ応用2016

    • Author(s)
      森貴洋
    • Organizer
      2016年真空・表面科学合同講演会
    • Place of Presentation
      名古屋市
    • Year and Date
      2016-11-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600081
  • [Presentation] New ON current Boosting Technology in Silicon-based Tunnel Field-Effect Transistors Utilizing Isoelectronic Trap2016

    • Author(s)
      Takahiro Mori
    • Organizer
      EMN Meeting on Field-Effect Transistors
    • Place of Presentation
      台湾・高雄
    • Year and Date
      2016-03-15
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] シリコントンネルトランジスタにおける深い準位を介した単一電子輸送とマイクロ波応答2016

    • Author(s)
      森山悟士, 森 貴洋, 大野圭司
    • Organizer
      日本物理学会2016年秋季大会
    • Place of Presentation
      金沢大学
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16H03900
  • [Presentation] 遷移金属ダイカルコゲナイドの極薄ボディMOSFET応用2015

    • Author(s)
      森貴洋、二之宮成樹、内田紀行、久保利隆、渡辺英一郎、津谷大樹、森山悟士、田中正俊、安藤淳
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋市
    • Year and Date
      2015-09-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600081
  • [Presentation] High-k/MetalゲートMoS2 MOSFETの試作と評価2015

    • Author(s)
      森貴洋、二之宮成樹、内田紀行、久保利隆、渡辺英一郎、津谷大樹、森山悟士、田中正俊、安藤淳
    • Organizer
      電子情報通信学会シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋市
    • Year and Date
      2015-06-19
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600081
  • [Presentation] Characterization of the effective mobility by split C-V technique in MoS2 MOSFETs with high-k/metal gate2015

    • Author(s)
      Takahiro Mori, Naruki Ninomiya, Toshitaka Kubo, Noriyuki Uchida, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka, and Atsushi Ando
    • Organizer
      2015 IEEE International Conference on Nanotechnology
    • Place of Presentation
      イタリア・ローマ
    • Year and Date
      2015-07-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600081
  • [Presentation] ON current boosting in Silicon-based Tunnel FETs Utilizing Isoelectronic Trap Technology2015

    • Author(s)
      Takahiro Mori
    • Organizer
      2015 International Workshop on Dielectric Thin Films for Future Electron Devices
    • Place of Presentation
      東京都江東区
    • Year and Date
      2015-11-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05526
  • [Presentation] Arイオンビーム部分照射によるhigh-EC SWCNT-SETの形成2009

    • Author(s)
      森貴洋、鶴岡泰広、阿知波洋次、石橋幸治
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Data Source
      KAKENHI-PROJECT-20710110
  • [Presentation] Barrier formation technique using low energy Ar ion irradiation to form wide temperature range operable SWCNT-SET2009

    • Author(s)
      Takahiro Mori
    • Organizer
      9^<th> IEEE Conference on Nanotechnology
    • Place of Presentation
      Genoa, Italy
    • Year and Date
      2009-07-26
    • Data Source
      KAKENHI-PROJECT-20710110
  • [Presentation] Barrier formation technique using low energy Ar ion irradiation to form wide temperature range operable SWCNT-SET2009

    • Author(s)
      T. Mori, Y. Tsuruoka, Y. Achiba, K. Ishibashi
    • Organizer
      9th IEEE Conference on Nanotechnology
    • Place of Presentation
      Genoa, Italy
    • Data Source
      KAKENHI-PROJECT-20710110
  • [Presentation] Arイオンビーム部分照射によるhigh-EC SWCNT-SETの形成2008

    • Author(s)
      森貴洋
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Data Source
      KAKENHI-PROJECT-20710110
  • [Presentation] Formation of Single Electron Transistors in Single-Walled Carbon Nanotubes with Low Energy Ar Ion Irradiation Technique2008

    • Author(s)
      T. Mori, S. Sato, K. Omura, S. Yajima, Y. Tsuruoka, Y. Achiba, K. Ishibashi
    • Organizer
      International Conference on Nanoscience and Technology 2008
    • Place of Presentation
      Keystone, USA
    • Data Source
      KAKENHI-PROJECT-20710110
  • [Presentation] Investigation of Electrical Characteristics on Top-gate MoS2 MOSFETs with high-k Al2O3 dielectric

    • Author(s)
      N. Ninomiya, T. Mori, N. Uchida, E. Watanabe, D. Tsuya, S. Moriyama, M. Tanaka, and A. Ando
    • Organizer
      27th International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Fukuoka, Japan
    • Year and Date
      2014-11-04 – 2014-11-07
    • Data Source
      KAKENHI-PROJECT-26600081
  • [Presentation] HfO2絶縁膜を用いたMoS2 FETにおける実効移動度の評価

    • Author(s)
      二之宮成樹,森貴洋, 内田紀行, 久保利隆, 渡辺英一郎, 津谷大樹, 森山悟士, 田中正俊, 安藤淳
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川県平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26600081
  • 1.  Ono Keiji (00302802)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 18 results
  • 2.  Moriyama Satoshi (00415324)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 18 results
  • 3.  Yasuda Tetsuji (90220152)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 4.  伊藤 公平 (30276414)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  NINOMIYA Naruki
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 7 results
  • 6.  中山 隆史
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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