PEI Yanli 裴艶麗

… Alternative Names

ペイヤンリペイヤンリ

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Researcher Number	70451622
Affiliation (based on the past Project Information) *help	2013: 東北大学, 国際高等研究教育機構, 助教 2011: Tohoku University, 助教 2008 – 2011: 東北大学, 国際高等研究教育機構, 助教 2007: 東北大学, 国際高等融合領域研究所, 助教
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment Except Principal Investigator Electron device/Electronic equipment / Science and Engineering
Keywords	Principal Investigator SAND方法 / 不揮発性メモリ / 磁性金属ナノドット Except Principal Investigator 複合ウェハ / ヘテロCMOSトランジスタ / セルフアセンブリー張り合わせる / 複合Ｓｉウェハ / セルフアセンブリー張り合わせ / ヘテロＣＭＯＳトランジスタ / 複合Siウェハ … More / 光電子集積システム・オン・チップ / シリコン貫通配線 / スーパーチップ / 光電子集積化 / 三次元集積化 / セルフアセンブリー / グラフォアセンブリー / 不挿発性メモリ / High-K絶縁膜 / 不揮発性メモリ / ナノ材料 / 半導体物性 / 電子デバイス・集積回路 / 量子ドット / 半導体超微細化 Less

High Performance, Low Power Hetero-CMOS Device using Compound Si Wafer
- Principal Investigator
  
  LEE KANGWOOK
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
高密度金属ナノドット磁性体の形成メカニズムの解明および新型メモリデバイスへの応用Principal Investigator
- Principal Investigator
  
  裴艶麗
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Three-Dimensionarlly Stacked Optoelectronic System-on-Chip Fabricated Using Grapho-Assembly
- Principal Investigator
  
  KOYANAGI Mitsumasa
- Project Period (FY)
  2009 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Nano-integration of Metal Nanodot Nonvolatile Memory
- Principal Investigator
  
  TANAKA Tetsu
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University

All 2011 2010 2009 2008 2007

All Journal Article Presentation Book

[Book] "次世代半導体メモリーの最新技術", 第6章:その他のメモリー最新技術2009
- Author(s)
  田中徹, 裴艶麗
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-18063002
[Book] 次世代半導体メモリの最新技術",第6章第3節:金属ナノドット不揮発性メモリ2009
- Author(s)
  田中徹, 裴艶麗
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric2011
- Author(s)
  Yanli Pei, Chengkuan Yin, Toshiya Kojima, Ji-Cheol Bea, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Journal Title
  
  IEEE Transactions on Nanotechnology
  
  Volume: (未定 In press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760241
[Journal Article] Effects of Postdeposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application2010
- Author(s)
  Yanli Pei, Toshiya Kojima, Tatsuro Hiraki, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Journal Title
  
  Japanese Journal of Applied Physics (未定, 印刷中)
- NAID
  40017176042
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric2010
- Author(s)
  Y. Pei, C. Yin, T. Kojima, J. Bea, H. Kino, T. Fukushima, T. Tanaka, M. Koyanagi
- Journal Title
  
  IEEE Transactions on Nanotechnology (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Investigation of Effects of Post-Deposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application2010
- Author(s)
  Y. Pei, T. Kojima, T. Hiraki, T. Fukushima, T. Tanaka, M. Koyanagi
- Journal Title
  
  Japanese Journal of Applied Physics (in print)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Investigation of Effects of Post-Deposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application2010
- Author(s)
  Yanli Pei, Toshiya Kojima, Tatsuro Hiraki, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760241
[Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009
- Author(s)
  Yanli Pei, Chengkuan Yin, Masahiko Nishijima, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Journal Title
  
  Applied Physics Letters 94
  
  Pages: 63108-63108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] MOSFET Nonvolatile Memory with High Density Tungsten Nanodots Floating Gate Formed by Self-Assembled Nanodot Deposition2009
- Author(s)
  Y Pei, C Yin, J C Bea, H Kino, T Fukushima, T Tanaka, M Koyanagi
- Journal Title
  
  Semiconductor Science and Technology 24
  
  Pages: 45022-45022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009
- Author(s)
  Yanli Pei, Chengkuan Yin, Masahiko Nishijima, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
- Journal Title
  
  Appl. Phys. Lett. 94
  
  Pages: 63108-63108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] MOSFET nonvolatile memory with a high-density tungsten nanodot floating gate formed by self-assembled nanodot deposition2009
- Author(s)
  Y. Pei
- Journal Title
  
  Semiconductor Science and Technology 24
  
  Pages: 45022-45025
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009
- Author(s)
  Y. Pei, C. Yin, M. Nishijima, T. Kojima, T. Fukushima, T. Tanaka, M. Koyanagi
- Journal Title
  
  Applied Physics Letter 94
  
  Pages: 63108-63108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Memory Characteristics of Metal-Oxide-Semiconductor Capacitor with High Density Cobalt Nanodots Floating Gate and HfO2 Blocking Dielectric2009
- Author(s)
  Y. Pei, C. Yin, T. Kojima, M. Nishijima, T. Fukushima, T. Tanaka, M. Koyanagi
- Journal Title
  
  Applied Physics Letter 95
  
  Pages: 33118-33118
- NAID
  120003728303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Memory Characteristics of Metal-Oxide-Semiconductor Capacitor with High Density Cobalt Nanodots Floating Gate and HfO2 Blocking Dielectric2009
- Author(s)
  Yanli Pei, Chengkuan Yin, Toshiya Kojima, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Journal Title
  
  Applied Physics Letters 95
  
  Pages: 33118-33118
- NAID
  120003728303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Electrical Characterization of MOS Memory Devices with Self-Assembled Tungsten Nano-Dots Dispersed in Silicon Nitride2009
- Author(s)
  Y. Pei, C. Yin, M. Nishijima, T. Kojima, H. Nohira, T. Fukushima, T. Tanaka, M. Koyanagi
- Journal Title
  
  ECS Trans. 18
  
  Pages: 33-37
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Electrical Characterization of MOS Memory Devices with Self-Assembled Tungsten Nano-Dots Dispersed in Silicon Nitride2009
- Author(s)
  Yanli Pei, Chengkuan Yin, Masahiko Nishijima, Toshiya Kojima
- Journal Title
  
  The Electrochemical Society Transactions 18
  
  Pages: 33-37
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009
- Author(s)
  Yanli Pei
- Journal Title
  
  Applied Physics Letters 94
  
  Pages: 63108-63110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] "Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots2008
- Author(s)
  Y. Pei, T. Fukushima, T. Tanaka, M. Koyanagi
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 2680-2683
- NAID
  210000064565
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots2008
- Author(s)
  Yanli Pei, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 2680-2683
- NAID
  210000064565
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride2008
- Author(s)
  Y. Pei, M. Nishijima, T. Fukushima, T. Tanaka, M. Koyanagi
- Journal Title
  
  Applied Physics Letter 93
  
  Pages: 113115-113117
- NAID
  120002338347
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride2008
- Author(s)
  Yanli Pei
- Journal Title
  
  Applied Physics Letters 93
  
  Pages: 113115-113117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Electrical Characterization of MetalOxideSemiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots2008
- Author(s)
  Yanli Pei
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 2680-2683
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride2008
- Author(s)
  Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
- Journal Title
  
  Appl. Phys. Lett. 93
  
  Pages: 113115-113117
- NAID
  120002338347
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Journal Article] Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots2008
- Author(s)
  Y. Pei
- Journal Title
  
  Japanese Journal of Applied Physics (印刷中)
- NAID
  210000064565
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] シリコン貫通光配線を用いた三次元光電子集積化技術2011
- Author(s)
  乗木暁博, 李康旭, 裴志哲, 福島誉史, 田中徹, 小柳光正
- Organizer
  J PCA Show 2011/ラージエレクトロニクスショー2011/2011マイクロエレクトロニクスショー/JISSO PROTEC2011
- Place of Presentation
  東京
- Year and Date
  2011-06-03
- Data Source
  KAKENHI-PROJECT-21226009
[Presentation] Band Energy Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application2010
- Author(s)
  Y.Pei, T.Hiraki, T.Kojima, T.Fukushima, M.Koyanagi, T.Tanaka
- Organizer
  International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22760241
[Presentation] Band Energy Engineered Metal Nanodots Nonvolatile Memory to Achieve Long Retention Characteristics2010
- Author(s)
  Tatsuro Hiraki, Yanli Pei, Toshiya Kojima, Ji-Choel Bea, Hisashi Kino, Mitsumasa Koyanagi, Tetsu Tanaka
- Organizer
  The 2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22760241
[Presentation] A study of Charge Retention Characteristics of Metal Nanodots Memory2010
- Author(s)
  開達郎, 裴艶麗, 小島俊哉, 〓志哲, 木野久志, 福島誉史, 小柳光正, 田中徹
- Organizer
  第57回応用物理学関係連合講演会2010年春季
- Place of Presentation
  東海大学
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Formation of Cobalt Nanodots Embedded in Silicon Oxide for Nonvolatile Memory Application2010
- Author(s)
  裴艶麗, 開達郎, 小島俊哉, 福島誉史, 田中徹, 小柳光正
- Organizer
  China Semiconductor Technology International Conference(CSTIC2010)
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] 縦型メタルナノドット不揮発性メモリに関する研究2010
- Author(s)
  開達郎, 栗山祐介, 小島俊哉, Mariappan Murugesan, 裴艶麗, 木野久志, 裴志哲, 福島誉史, 小柳光正, 田中徹
- Organizer
  応用物理学会2010年秋
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-22760241
[Presentation] A study of Charge Retention Characteristics of Metal Nanodots Memory2010
- Author(s)
  開達郎, 裴艶麗, 小島俊哉, 〓志哲, 木野久志, 福島誉史, 小柳光正, 田中徹
- Organizer
  第57回応用物理学関係連合講演会2010年春季
- Place of Presentation
  神奈川県平塚市東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Formation of Cobalt Nanodots Embedded in Silicon Oxide for Nonvolatile Memory Application2010
- Author(s)
  Yanli Pei, Tatsuro Hiraki, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Organizer
  China Semiconductor Technology International Conference 2010 (CSTIC2010)
- Place of Presentation
  Shanghai, China.
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] メタルナノドットメモリの電荷保持特性に関する研究2009
- Author(s)
  開達郎, 裴艶麗, 小島俊哉, 〓志哲, 木野久志, 福島誉史, 田中徹, 小柳光正
- Organizer
  第70回応用物理学関係連合講演会2009年秋季
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] A Co-Nanodots Nonvolatile Memory with High-k Blocking Oxide for Implantable Biomedical Devices2009
- Author(s)
  C.K. Yin, Y.L. Pei, T. Kojima, T. Fukushima, M. Koyanagi, T. Tanaka
- Organizer
  9th International Symposium on Nano-Biomedical Engineering
- Place of Presentation
  Sendai, Japan.
- Year and Date
  2009-03-28
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Electrical Characterization of MOS Memory Devices with Self-assembled Tungsten Nano-dots Dispersed in Silicon Nitride2009
- Author(s)
  Y. Pei
- Organizer
  International Semiconductor Technology Conference & China Semiconductor Technology International Conference 2009
- Place of Presentation
  Shanghai, China
- Year and Date
  2009-03-19
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] High-k絶縁膜を有するタングステンナノドットフローティングゲートMOSキャパシタのメモリ特性2009
- Author(s)
  裴艶麗, 西嶋雅彦, 福島誉史, 田甲徹, 小柳光正
- Organizer
  第69回応用物理学関係連合講演会2008年秋季
- Place of Presentation
  中部大学
- Year and Date
  2009-09-03
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] High-Performance MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric2009
- Author(s)
  Yanli Pei, Chengkuan Yin, Toshiya Kojima, Ji-Cheol Bea, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Organizer
  10th Non-Volatile Memory Technology Symposium (NVMTS 2009)
- Place of Presentation
  Portland, OR, USA.
- Year and Date
  2009-10-27
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] High-Performance MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric2009
- Author(s)
  Yanli Pei, Chengkuan Yin, Toshiya Kojima, Ji-Cheol Bea, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Organizer
  10^<th> Non-Volatile Memory Technology Symposium(NVMTS 2009)
- Place of Presentation
  Portland, OR, USA
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Electrical Characterization of MOS Memory Devices with Self-assembled Tungsten Nano-dots Dispersed in Silicon Nitride2009
- Author(s)
  Y. Pei, C. Yin, M. Nishijima, T. Kojima, H. Nohira, T. Fukushima, T. Tanaka, M. Koyanagi
- Organizer
  ISTC/CSTIC 2009
- Place of Presentation
  Shanghai, China
- Year and Date
  2009-03-19
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Term Retention Characteristics of MOS Memory Devices with Self-Assembled Tungsten Nano-Dot Dispersed in Silicon Nitride2008
- Author(s)
  Y. Pei, T. Fukushima, T. Tanaka, M. Koyanagi
- Organizer
  MRS 2008 Spring Meeting
- Place of Presentation
  San Francisco, USA.
- Year and Date
  2008-03-25
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO2 Blocking Dielectric2008
- Author(s)
  Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
- Organizer
  The 2008 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba International Congress Center, Tsukuba, Japan.
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] シリコン窒化膜中に埋め込んだタングステンナノドットフローティングゲートMOSキャパシタのメモリ特性2008
- Author(s)
  裴艶麗
- Organizer
  第55回応用物理学会学術講演会2008春
- Place of Presentation
  日本大学,日本
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Characterization of Metal Nanodots Nonvolatile Memory2008
- Author(s)
  Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Organizer
  シリコン材料・デバイス研究会
- Place of Presentation
  東京
- Year and Date
  2008-06-10
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Term Retention Characteristics of MOS Memory Devices with Self-Asse mbled Tungsten Nano-Dot Dispersed in Silicon Nitride2008
- Author(s)
  Y. Pei
- Organizer
  MRS 2008 Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO2 Blocking Dielectric2008
- Author(s)
  Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Organizer
  The 2008 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO2 Blocking Dielectric2008
- Author(s)
  Yanli Pei
- Organizer
  The 2008 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2008-09-24
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] High-k絶縁膜を有するタングステンナノドットフローティングゲートMOS'キャパシタのメモリ特性2008
- Author(s)
  裴艶麗
- Organizer
  第69回応用物理学関係連合講演会2008年秋季
- Place of Presentation
  中部大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Characterization of Metal Nanodots Nonvolatile Memory2008
- Author(s)
  裴艶麗
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  東京大学
- Year and Date
  2008-06-10
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] シリコン窒化膜中に埋め込んだタングステンナノドットフローティングゲートMOSキャパシタのメモリ特性2008
- Author(s)
  裴艶麗, 福島誉史, 田中徹, 小柳光正
- Organizer
  第55回応用物理学関係連合講演会2008年春季
- Place of Presentation
  日本大学
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] 金属ナノドットフローティングゲートMOSキャパシタのメモリ特性2007
- Author(s)
  裴艶麗
- Organizer
  第68回応用物理学会学術講演会2007秋
- Place of Presentation
  北海道工業大学,日本
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Memory Window Enhancement of MOS Memory Devices with High Density Self-Assembled Tungsten Nano-dot2007
- Author(s)
  Y. Pei
- Organizer
  The 2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] Memory Window Enhancement of MOS Memory Devices with High Density Self-Assembled Tungsten Nano-dot2007
- Author(s)
  Yanli Pei, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
- Organizer
  The 2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan.
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18063002
[Presentation] 金属ナノドットフローティングゲートMOSキャパシタのメモリ特性2007
- Author(s)
  裴艶麗, 福島誉史, 田中徹, 小柳光正
- Organizer
  第68回応用物理学会学術講演会2007秋
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18063002

1. TANAKA Tetsu (40417382)

# of Collaborated Projects: 3 results

# of Collaborated Products: 33 results
2. FUKUSHIMA Takafumi (10374969)

# of Collaborated Projects: 3 results

# of Collaborated Products: 32 results
3. KOYANAGI Mitsumasa (60205531)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
4. HANE Kazuhiro (50164893)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. MIURA Hideo (90361112)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. KIYOYAMA Kouji (60412722)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. LEE KANGWOOK (90534503)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. BEA Jichel (40509874)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. MURUGESAN Mariappan (10509699)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

PEI Yanli 裴 艶麗

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Research Projects

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Co-Researchers

High Performance, Low Power Hetero-CMOS Device using Compound Si Wafer

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高密度金属ナノドット磁性体の形成メカニズムの解明および新型メモリデバイスへの応用Principal Investigator

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Three-Dimensionarlly Stacked Optoelectronic System-on-Chip Fabricated Using Grapho-Assembly

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Nano-integration of Metal Nanodot Nonvolatile Memory

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[Book] "次世代半導体メモリーの最新技術", 第6章:その他のメモリー最新技術2009

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[Book] 次世代半導体メモリの最新技術",第6章第3節:金属ナノドット不揮発性メモリ2009

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[Journal Article] MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric2011

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[Journal Article] Effects of Postdeposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application2010

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NAID

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[Journal Article] MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric2010

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[Journal Article] Investigation of Effects of Post-Deposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application2010

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[Journal Article] Investigation of Effects of Post-Deposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application2010

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[Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009

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[Journal Article] MOSFET Nonvolatile Memory with High Density Tungsten Nanodots Floating Gate Formed by Self-Assembled Nanodot Deposition2009

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[Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009

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[Journal Article] MOSFET nonvolatile memory with a high-density tungsten nanodot floating gate formed by self-assembled nanodot deposition2009

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[Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009

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[Journal Article] Memory Characteristics of Metal-Oxide-Semiconductor Capacitor with High Density Cobalt Nanodots Floating Gate and HfO2 Blocking Dielectric2009

Author(s)

PEI Yanli 裴艶麗

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