Saito Mitsufumi 斉藤光史

… Alternative Names

斉藤光史サイトウミツフミ

SAITO Mitsufumi 斉藤光史

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Researcher Number	70452092
Other IDs
Affiliation (Current)	2025: 東京都立大学, システムデザイン研究科, 助教
Affiliation (based on the past Project Information) *help	2018: 首都大学東京, システムデザイン研究科, 助教 2017: 首都大学東京, 理工学研究科, 助教 2008: University of Toyama, 地域連携推進機構・産学連携部門, 研究員 2008: University of Toyama, 地域連携推進機構・産業連携部門, 研究員 2007: University of Toyama, ベンチャービジネスラボラトリー, 非常勤研究員
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering Except Principal Investigator Applied condensed matter physics and related fields
Keywords	Principal Investigator Si / InSb / MBE / シリコン(Si) / インジウムアンチモン(InSb) / ヘテロエピタキシャル成長 Except Principal Investigator キャリアドープ / デバイス化 / 輸送測定 / 強磁場測定 … More / 超伝導 / 異方性 / ネマティック超伝導 / デバイス / 超薄膜化 / 量子振動 / 磁気抵抗 / 微細加工 / 薄膜 / へき開法 / 単結晶 / BiCh2系層状化合物 / 層状化合物 Less

Exploration of giant Rashba effect in RO1-xFxBiCh2 ultrathin films
- Principal Investigator
  
  MIZUGUCHI Yoshikazu
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Research Field
  
  Applied condensed matter physics and related fields
- Research Institution
  Tokyo Metropolitan University
Film formation utilizing bi-layer and (111)-slope on Si (001) substratePrincipal Investigator
- Principal Investigator
  
  SAITO Mitsufumi
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Toyama

All 2009 2008 2007 Other

All Journal Article Presentation

[Journal Article] High quality InSb films grown on Si(111) substrate via InSb bi-layer2009
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
- Journal Title
  
  e-Journal of Surface Science and Nano Technology Vol.7
  
  Pages: 145-148
- NAID
  130004439133
- Data Source
  KAKENHI-PROJECT-19569003
[Journal Article] Heteroepitaxial InSb films grown via Si(111)-7x3-In surface reconstruction2008
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, Y. Yamashita, C. Tatsuyama, T. Tambo, K. Maezawa
- Journal Title
  
  Phys. Stat. Sol (c)5, No.9
  
  Pages: 2772-2774
- Data Source
  KAKENHI-PROJECT-19569003
[Journal Article] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2008
- Author(s)
  Mitsufumi SAITO
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 6052-6054
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19569003
[Journal Article] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2008
- Author(s)
  M. Saito, M. Mori, K. Maezawa Appl
- Journal Title
  
  Surf. Sci 254
  
  Pages: 6052-6054
- Data Source
  KAKENHI-PROJECT-19569003
[Journal Article] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111)substrate
- Author(s)
  M. Saito, M. Mori, K. Ueda, K. Maezawa
- Journal Title
  
  Phys. Stat. Sol.(c)(accepted) : Refereed
- Data Source
  KAKENHI-PROJECT-19569003
[Journal Article] Heteroepitaxial growth of InSb films on V-grooved Si(001)substrate
- Author(s)
  M. Mori, M. Saito, H. Igarashi, T. Iwasugi, N. B. Ahmad, K. Murata, K. Maezawa
- Journal Title
  
  e-Journal of Surface Science and Nano Technology (accepted) : Refereed
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] Si(111)基板上での30°回転InSb薄膜層形成に対するIn及びSb層の効果2008
- Author(s)
  斉藤光史
- Organizer
  電気通信学会電子デバイス研究会
- Place of Presentation
  石川県金沢市・金沢大学角間キャンパス
- Year and Date
  2008-06-14
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] Inprovement of rotated InSb films by additional In adsorption onto initial InSb bi-layer2008
- Author(s)
  Mitsufumi SAITO
- Organizer
  8^<th> Japan-Russia Seminar on Semiconductor Surfaces (TRSSS-8)
- Place of Presentation
  Tohoku University, Sendai, Japan
- Year and Date
  2008-10-21
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜成長2008
- Author(s)
  斉藤光史
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  千葉県船橋市・日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] Heteroepitaxial growth of InSb films on V-grooved Si(001)substrate2008
- Author(s)
  M. Mori, M. Saito, H. Igarashi, T. Iwasugi, N. B. Ahmad, K. Maezawa
- Organizer
  5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
- Place of Presentation
  Waseda University, Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] High quality InSb films grown on Si(111) substrate via InSb bi-layer2008
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
- Organizer
  8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
- Place of Presentation
  Tohoku University, Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] Si(111)基板上での30°回転InSb薄膜層形成に対するIn及びSb層の効果2008
- Author(s)
  斉藤光史、森雅之、上田広司、前澤宏一
- Organizer
  電気通信学会電子デバイス研究会
- Place of Presentation
  石川県金沢市・金沢大学
- Year and Date
  2008-06-14
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111) substrate2008
- Author(s)
  Mitsufumi SAITO
- Organizer
  35^<th> International Symposium on Compound Semiconductors (ISCS2008)
- Place of Presentation
  Europa-Park, Rust, Germany
- Year and Date
  2008-09-23
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] Heteroepitaxial growth of InSb films on a Si(111) substrate via InSb bi-layer2008
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, Y. Shinmura, K. Maezawa
- Organizer
  15th International Conference on Molecular Beam Epitaxy (MBE2008)
- Place of Presentation
  Univ. of British Columbia, Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] (111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長2008
- Author(s)
  五十嵐弘樹、森雅之、斉藤光史、岩杉達矢、ノルスルヤティビンティアハマド、前澤宏一
- Organizer
  秋季第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市・中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜の成長2008
- Author(s)
  斉藤光史、森雅之、上田広司、吉田達雄、新村康成、前澤宏一
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  千葉県船橋市・日本大学理工学部
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜のヘテロエピタキシャル成長2008
- Author(s)
  中谷公彦、斉藤光史、上田広司、森雅之、前澤宏一
- Organizer
  秋季第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市・中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111) substrate2008
- Author(s)
  M. Saito, M. Mori, K. Ueda, K. Nakatani, K. Maezawa
- Organizer
  35th International Symposium on Compound Semiconductors (ISCS2008)
- Place of Presentation
  Europa-Park, Rust, Germany
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] Inprovement of rotated InSb films by additional In adsorption onto initial InSb bi-layer2008
- Author(s)
  M. Saito, M. Mori, C. Tatsuyama, K. Maezawa
- Organizer
  8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
- Place of Presentation
  Tohoku University, Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2007
- Author(s)
  M. Saito, M. Mori, K. Maezawa
- Organizer
  5th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
- Place of Presentation
  Tokyo Metropolitan Univ., Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19569003
[Presentation] Effects of In and Sb momo-layers to form rotated InSb films on a Si (111) substrate2007
- Author(s)
  Mitsufumi SAITO
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  東京都八王子市・首都大学東京
- Year and Date
  2007-11-13
- Data Source
  KAKENHI-PROJECT-19569003

1. MIZUGUCHI Yoshikazu (50609865)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Saito Mitsufumi 斉藤 光史

斉藤 光史 サイトウ ミツフミ

SAITO Mitsufumi 斉藤 光史

Research Projects

Research Products

Co-Researchers

Exploration of giant Rashba effect in RO1-xFxBiCh2 ultrathin films

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Film formation utilizing bi-layer and (111)-slope on Si (001) substratePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] High quality InSb films grown on Si(111) substrate via InSb bi-layer2009

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Heteroepitaxial InSb films grown via Si(111)-7x3-In surface reconstruction2008

Author(s)

Journal Title

Data Source

[Journal Article] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2008

Author(s)

Journal Title

Data Source

[Journal Article] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2008

Author(s)

Journal Title

Data Source

[Journal Article] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111)substrate

Author(s)

Journal Title

Data Source

[Journal Article] Heteroepitaxial growth of InSb films on V-grooved Si(001)substrate

Author(s)

Journal Title

Data Source

[Presentation] Si(111)基板上での30°回転InSb薄膜層形成に対するIn及びSb層の効果2008

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Inprovement of rotated InSb films by additional In adsorption onto initial InSb bi-layer2008

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜成長2008

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Heteroepitaxial growth of InSb films on V-grooved Si(001)substrate2008

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] High quality InSb films grown on Si(111) substrate via InSb bi-layer2008

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Si(111)基板上での30°回転InSb薄膜層形成に対するIn及びSb層の効果2008

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111) substrate2008

Author(s)

Organizer

Saito Mitsufumi 斉藤光史

斉藤光史サイトウミツフミ

SAITO Mitsufumi 斉藤光史