KIKAWA Jyunjiro 城川潤二郎

… Alternative Names

KIKAWA Junjiro 城川潤二郎

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Researcher Number	70469196
Other IDs
Affiliation (based on the past Project Information) *help	2012: 立命館大学, 総合理工学研究機構, 教授 2008 – 2010: Ritsumeikan University, 総合理工学研究機構, 教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment Except Principal Investigator Applied materials science/Crystal engineering
Keywords	Principal Investigator Interface / Trap / in situ SiN / dipole / MIS / CV / KFM / inversion layer / trap / interface / SiN / MIS-FET / GaN … More Except Principal Investigator … More X線光電子分光法 / ケルビン力顕微鏡 / ショットキー電極 / オーミック電極 / KOH / ウェットエッチング / MIS構造 / p型ドーピング / 極性 / DERI法 / ドライエッチング / 窒化インジウムガリウム / 分子線エピタキシー法 / 窒化インジウム / DERI / InGaN / RF-MBE / MBE / InN / ヘテロ構造 Less

Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Ritsumeikan University
Study of the interface at MIS/GaN-FETPrincipal Investigator
- Principal Investigator
  
  KIKAWA Junjiro
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Ritsumeikan University

All 2011 2010 2009 2008

All Journal Article Presentation

[Journal Article] Study of the flatband voltage shift of metal/insulator/n-GaN capacitors by annealing2010
- Author(s)
  J.Kikawa, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguch, Y.Nanishi
- Journal Title
  
  Phys.Status Solidi B 246
  
  Pages: 1649-1652
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560341
[Journal Article] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods2009
- Author(s)
  J.Kikawa, Y.Horiuchi, E.Shibata, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A. Yamaguchi, Y Nanishi
- Journal Title
  
  Material researchsociety symposium proceedings 1108
  
  Pages: 157-161
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560341
[Journal Article] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods2009
- Author(s)
  J.Kikawa, Y.Horiuchi, E.Shibata, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguchi, Y Nanishi
- Journal Title
  
  Material research society symposium proceedings 1108
  
  Pages: 157-161
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Temperature Dependence of I-V Characteristics of p-type InN Grown by RF-MBE2011
- Author(s)
  H.Sakurai, J.Kikawa, R.Iwamoto, K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  30th Electronic Materials Symposium (EMS30)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Evaluation of P-type InN Using Temperature Dependence of I-V Characteristics2011
- Author(s)
  H.Sakurai, J.Kikawa, R.Iwamoto, K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証2011
- Author(s)
  櫻井秀昭, 井脇明日香, 岩本亮輔, 山口智広, 城川潤二郎, 荒木努, 名西〓之
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] 電流・電圧特性の温度依存性評価によるp型InNの検証2010
- Author(s)
  櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学神奈川県厚本市
- Year and Date
  2010-03-24
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Metal/SiN/GaN構造のアニールによるフラットバンドシフトの検討2009
- Author(s)
  城川潤二郎、堀内佑樹,柴田英次,金子昌充、大嶽浩隆,藤嶌辰也,近松健太郎,山口敦司,名西〓之
- Organizer
  秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Metal/SiN/GaN構造のアニールによるフラットバンドシフトの検討2009
- Author(s)
  城川潤二郎、堀内佑樹, 柴田英次, 金子昌充、大嶽浩隆, 藤罵辰也, 近松健太郎, 山口敦司, 名西〓之
- Organizer
  秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Study of the flat band voltage shift in Metal/Insulator/n-GaN capacitors by annealing2009
- Author(s)
  J.Kikawa, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguchi, Y Nanishi
- Organizer
  2009 E-MRS Fall meeting
- Place of Presentation
  Warsaw Univ.(Poland)
- Year and Date
  2009-09-17
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Study of the flat bandvoltage shift in Metal/Insulator/n-GaN capacitors by annealing2009
- Author(s)
  J.Kikawa, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguchi, Y Nanishi
- Organizer
  2009 E-MRS Fall meeting
- Place of Presentation
  Warsaw,Poland
- Year and Date
  2009-09-17
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] CV測定によるGaN-MIS構造に於けるSiN成膜条件の検討2009
- Author(s)
  城川潤二郎、堀内佑樹,柴田英次,金子昌充、大嶽浩隆,藤嶌辰也,近松健太郎,山口敦司,名西〓之
- Organizer
  春季第56回応用物理学会学術講演会
- Place of Presentation
  つくば大学、茨城
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] CV測定によるGaN-MIS構造に於けるSiN成膜条件の検討2009
- Author(s)
  城川潤二郎、堀内佑樹, 柴田英次, 金子昌充、大嶽浩隆, 藤嶌辰也, 近松健太郎, 山口敦司, 名西〓之
- Organizer
  春季第56回応用物理学会学術講演会
- Place of Presentation
  つくば大学(茨城県)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] GaN MIS構造のCV特性検討22008
- Author(s)
  城川潤二郎,堀内佑樹,柴田英次,金子昌充,大嶽浩隆,藤嶌辰也,近松健太郎,山口敦司,名西〓之
- Organizer
  第69回秋季応用物理学会学術講演会
- Place of Presentation
  愛知県中部大学、春日井市
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods2008
- Author(s)
  城川潤二郎, 堀内佑樹, 柴田英次, 金子昌充, 大嶽浩隆, 藤嶌辰也, 近松健太郎, 山口敦司, 名西?之
- Organizer
  2008 Materials Research Society Fall meeting
- Place of Presentation
  Boston, MA., U.S.A.
- Year and Date
  2008-12-02
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] Detailed investigation of GaN metal-insulator-semiconduct or structures by capacitance-voltage and deep level transient spectroscopy methods2008
- Author(s)
  城川潤二郎, 堀内佑樹, 柴田英次, 金子昌充, 大嶽浩隆,藤嶌辰也,近松健太郎, 山口敦司, 名西〓之
- Organizer
  2008 Materials Research Society Fall meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2008-12-02
- Data Source
  KAKENHI-PROJECT-20560341
[Presentation] GaN MIS構造のCV特性検討22008
- Author(s)
  城川潤二郎, 堀内佑樹, 柴田英次, 金子昌充, 大嶽浩隆, 藤蔦辰也, 近松健太郎, 山口敦司, 名西?之
- Organizer
  第69回秋季応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20560341

1. KANEKO Masamitsu (70374709)

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
2. NANISHI Yasushi (40268157)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
3. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
4. YAMAGUCHI Tomihiro (50454517)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
5. WANG Ke (60532223)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

KIKAWA Jyunjiro 城川 潤二郎

KIKAWA Junjiro 城川 潤二郎

Research Projects

Research Products

Co-Researchers

Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study of the interface at MIS/GaN-FETPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Study of the flatband voltage shift of metal/insulator/n-GaN capacitors by annealing2010

Author(s)

Journal Title

Data Source

[Journal Article] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods2009

Author(s)

Journal Title

Data Source

[Journal Article] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods2009

Author(s)

Journal Title

Data Source

[Presentation] Temperature Dependence of I-V Characteristics of p-type InN Grown by RF-MBE2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Evaluation of P-type InN Using Temperature Dependence of I-V Characteristics2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 電流・電圧特性の温度依存性評価によるp型InNの検証2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Metal/SiN/GaN構造のアニールによるフラットバンドシフトの検討2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Metal/SiN/GaN構造のアニールによるフラットバンドシフトの検討2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Study of the flat band voltage shift in Metal/Insulator/n-GaN capacitors by annealing2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Study of the flat bandvoltage shift in Metal/Insulator/n-GaN capacitors by annealing2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] CV測定によるGaN-MIS構造に於けるSiN成膜条件の検討2009

Author(s)

Organizer

KIKAWA Jyunjiro 城川潤二郎

KIKAWA Junjiro 城川潤二郎