Ishikawa Yasuaki 石河泰明

… Alternative Names

ISHIAKAWA Yasuaki 石河泰明

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Researcher Number	70581130
Other IDs	https://orcid.org/0000-0003-4613-6117
Affiliation (Current)	2025: 青山学院大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help	2020 – 2022: 青山学院大学, 理工学部, 准教授 2021: 奈良先端科学技術大学院大学, 先端科学技術研究科, 准教授 2018 – 2019: 奈良先端科学技術大学院大学, 先端科学技術研究科, 准教授 2017: 奈良先端科学技術大学院大学, 物質創成科学研究科, 准教授 2013 – 2014: 奈良先端科学技術大学院大学, 物質創成科学研究科, 准教授 2013: 奈良先端科学技術大学院大学, 物質創成科学研究科, 准教授
Review Section/Research Field	Principal Investigator Basic Section 29020:Thin film/surface and interfacial physical properties-related / Applied materials / Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Basic Section 29020:Thin film/surface and interfacial physical properties-related
Keywords	Principal Investigator 3次元周期的ナノ構造 / 熱電材料 / 薄膜 / ZnO / ナノ構造 / 熱伝導率 / 構造異方性 / 材料加工・処理 / 熱工学 / 半導体物性 … More / 液体シリコン / テンプレート / 液体材料 / OHラジカル / 塗布 / ＯＨラジカル / ＩｎＺｎＯ / 薄膜トランジスタ / 酸化物半導体 … More Except Principal Investigator 半導体 / 高圧水蒸気処理 / 薄膜トランジスタ / 3次元構造 / 熱伝導度 / 熱輸送 / 薄膜材料 / フレキシブル基板 / 金属酸化物 / 電気抵抗 / 熱抵抗 / 酸化物 / ゼーベック効果 / 熱電素子 / 半導体デバイス / 原子層堆積法 / 薄膜半導体 / 酸化物半導体 / 熱電変換素子 / 半導体物理 / HEMT / MOS / ゲート絶縁膜 / 界面準位 / 超臨界水 / パワーデバイス / MOS接合 / 高信頼性 / パワー半導体 / 窒化ガリウム / 硫化亜鉛 / 多結晶シリコン / レーザ照射 / シリコン / 水素化 / 欠陥 / 結晶粒 / 結晶化 / 水中レーザ / レーザー照射 / マイクロ波 / ホットキャリア / プローブ顕微鏡 / シリコン薄膜 / ディスプレイ / 無機EL / レーザ結晶化 Less

Design and development of structural-anisotropic three-dimensional phononic crystal toward low thermal conductivity materialPrincipal Investigator
- Principal Investigator
  
  Yasuaki Ishikawa
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Aoyama Gakuin University
Research on high performance flexible thermoelectric device focusing on heat transport in amorphous oxide semiconductor
- Principal Investigator
  
  Uraoka Yukiharu
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Nara Institute of Science and Technology
Effect of three-dimensional Si phononic crystal on thermal-electric characteristicsPrincipal Investigator
- Principal Investigator
  
  Ishikawa Yasuaki
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  Nara Institute of Science and Technology
Highly reliable GaN power device fabricated using supercritical water
- Principal Investigator
  
  URAOKA Yukiharu
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nara Institute of Science and Technology
Low temperature process in printed thin-film transistors toward high-resolution flexible displaysPrincipal Investigator
- Principal Investigator
  
  ISHIKAWA Yasuaki
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nara Institute of Science and Technology
Low temperature polycrystalline thin film transistors for next generation high performance display
- Principal Investigator
  
  URAOKA Yukiharu
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nara Institute of Science and Technology

All 2022 2020 2019 2018 2017 2016 2015 2014 2013 2011 Other

All Journal Article Presentation Patent

[Journal Article] Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films2020
- Author(s)
  Felizco Jenichi、Juntunen Taneli、Uenuma Mutsunori、Etula Jarkko、Tossi Camilla、Ishikawa Yasuaki、Tittonen Ilkka、Uraoka Yukiharu
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 12 Issue: 43 Pages: 49210-49218
- DOI
  10.1021/acsami.0c11439
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02601, KAKENHI-PROJECT-18K04939
[Journal Article] Development of High-Reliability and -Stability Chemical Sensors Based on an Extended-Gate Type Amorphous Oxide Semiconductor Thin-Film Transistor2020
- Author(s)
  Yuki Hashima, Takanori Takahashi, Yasuaki Ishikawa, and Yukiharu Uraoka
- Journal Title
  
  ACS Appl. Electron. Mater.
  
  Volume: 2 Issue: 2 Pages: 405-408
- DOI
  10.1021/acsaelm.9b00844
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02601
[Journal Article] Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Temperature Photosensitive Passivation2020
- Author(s)
  Safaruddin Aimi Syairah、Bermundo Juan Paolo Soria、Yoshida Naofumi、Nonaka Toshiaki、Fujii Mami N.、Ishikawa Yasuaki、Uraoka Yukiharu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 41 Issue: 9 Pages: 1372-1375
- DOI
  10.1109/led.2020.3011683
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02601
[Journal Article] Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation2020
- Author(s)
  Felizco Jenichi Clairvaux、Uenuma Mutsunori、Ishikawa Yasuaki、Uraoka Yukiharu
- Journal Title
  
  Applied Surface Science
  
  Volume: 527 Pages: 146791-146791
- DOI
  10.1016/j.apsusc.2020.146791
- NAID
  120007146511
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02601, KAKENHI-PROJECT-18K04939
[Journal Article] Unique degradation under AC stress in high-mobility amorphous InWZnO thin-film transistors2020
- Author(s)
  Takahashi Takanori、Fujii Mami N.、Miyanaga Ryoko、Miyanaga Miki、Ishikawa Yasuaki、Uraoka Yukiharu
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 5 Pages: 054003-054003
- DOI
  10.35848/1882-0786/ab88c5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02601, KAKENHI-PROJECT-20J23326
[Journal Article] High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO2020
- Author(s)
  Corsino Dianne C.、Bermundo Juan Paolo S.、Kulchaisit Chaiyanan、Fujii Mami N.、Ishikawa Yasuaki、Ikenoue Hiroshi、Uraoka Yukiharu
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: 2 Issue: 8 Pages: 2398-2407
- DOI
  10.1021/acsaelm.0c00348
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02601
[Journal Article] Physical and electrical properties of ALD-Al2O3/GaN MOS capacitor annealed with high pressure water vapor2019
- Author(s)
  Yuta Fujimoto, Mutsunori Uenuma, Tsubasa Nakamura, Masaaki Furukawa, Yasuaki Ishikawa, and Yukiharu Uraoka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 4 Pages: 40902-40902
- DOI
  10.7567/1347-4065/ab09a2
- NAID
  210000135492
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04332
[Journal Article] Removing Process of the Three-Dimension Periodic Nanostructure Fabricated from KMPR Photoresist2019
- Author(s)
  Xudongfang Wang, Yasuaki Ishikawa, Shinji Araki, Mutsunori Uenuma, and Yukiharu Uraoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SD Pages: SDDF08-SDDF08
- DOI
  10.7567/1347-4065/ab0dea
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05032
[Journal Article] Degradation phenomenon in metal-oxide semiconductor thin-film transistors and technique for its reliability evaluation and suppression2019
- Author(s)
  Y.Uraoka, J. P. Bermundo, M.N. Fujii, M. Uenuma, and Y. Ishikawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 9 Pages: 090502-090502
- DOI
  10.7567/1347-4065/ab1604
- NAID
  210000155669
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02601
[Journal Article] Hot carrier effects in InGaZnO thin-film transistor2019
- Author(s)
  T. Takahashi, R. Miyanaga, M. N. Fujii, J. Tanaka, K. Takechi, H. Tanabe, J. P. Bermundo, Y. Ishikawa and Y. Uraoka
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 9 Pages: 094007-094007
- DOI
  10.7567/1882-0786/ab3c43
- NAID
  210000156978
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02601
[Journal Article] Influence of carbon impurity and oxygen vacancies in Al2O3 film on Al2O3/GaN MOS capacitor characteristics2018
- Author(s)
  Mutsunori Uenuma, Kiyoshi Takahashi, Sho Sonehara, Yuta Tominaga, Yuta Fujimoto, Yasuaki Ishikawa, and Yukiharu Uraoka
- Journal Title
  
  AIP ADVANCES
  
  Volume: 8 Issue: 10 Pages: 05103-05103
- DOI
  10.1063/1.5041501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04332
[Journal Article] One-dimensionl arrangement of nanoparticles utilizing the V-grooved and cage shaped Proteins2017
- Author(s)
  T. Ban, M. Uenuma, S. Migita, N. Okamoto, Y.Ishikawa, Y.Uraoka, I. Yamashita and S. Yamamoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 6S1 Pages: 06GG11-06GG11
- DOI
  10.7567/jjap.56.06gg11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04332
[Journal Article] Estimation of charge effects of ultrafine channel utilizing junctionless transistor with nanodot-type floating gate2017
- Author(s)
  T. Ban, S. Migita, M. Uenuma, N. Okamoto, Y.Ishikawa, Y.Uraoka, I. Yamashita, S. Yamamoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 3S Pages: 03BB05-03BB05
- DOI
  10.7567/jjap.56.03bb05
- NAID
  210000147501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04332
[Journal Article] Fabrication of Nanoshell-Based 3D Periodic Structures by Templating Process using Solution-derived ZnO2017
- Author(s)
  Araki Shinji、Ishikawa Yasuaki、Wang Xudongfang、Uenuma Mutsunori、Cho Donghwi、Jeon Seokwoo、Uraoka Yukiharu
- Journal Title
  
  Nanoscale Research Letters
  
  Volume: 12 Issue: 1 Pages: 419-419
- DOI
  10.1186/s11671-017-2186-6
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05032
[Journal Article] Solution-derived SiO2 gate insulator formed by Co2 laser annealing for polycrystalline silicon thin-film transistors2017
- Author(s)
  D.Hishitani, M. Horita, Y.Ishikawa, H.Ikenoue, and Y.Uraoka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 5 Pages: 056503-056503
- DOI
  10.7567/jjap.56.056503
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04332
[Journal Article] Charcteristics of Perovskite Solar Cells under Low-Illuminance Condition2017
- Author(s)
  I.Raifuku, Y.Ishikawa, S.Ito, and Y.Uraoka
- Journal Title
  
  The Journal of Physical Chemistry C
  
  Volume: 120 Issue: 34 Pages: 18986-18990
- DOI
  10.1021/acs.jpcc.6b05298
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04332
[Journal Article] Numerical analysis of monocrystalline silicon solar dells with fine nanoimprinted texture surface2017
- Author(s)
  S.Yoshinaga, Y.Ishikawa, S.Araki, T.Honda, Y. Jiang, and Y.Uraoka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 2 Pages: 022301-022301
- DOI
  10.7567/jjap.56.022301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04332
[Journal Article] "H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing"2017
- Author(s)
  Juan Paolo S. Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Hiroshi Ikenoue, and Yukiharu Uraoka
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107 Issue: 13 Pages: 33504-33504
- DOI
  10.1063/1.4979319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18093, KAKENHI-PROJECT-16H04332
[Journal Article] Growth of InGaZnO nanowires vis a Mo/Au catalyst from amorphous thin film2017
- Author(s)
  Jenichi Clairvaux, Mustunori Uenuma, Daiki Senaha, Yasuaki Ishikawa, Yukiharu Uraoka
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 111 Issue: 3 Pages: 033104-033104
- DOI
  10.1063/1.4993745
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04332
[Journal Article] Self-heating induced instability of oxide thin film transistors under dynamic stress2016
- Author(s)
  Kahori Kise, Mami N. Fujii, Satoshi Urakawa, Haruka Yamazaki, Emi Kawashima, Shigekazu Tomai, Koki Yano, Dapeng Wang, Mamoru Furuta, Yasuaki Ishikawa, and Yukiharu Uraoka
- Journal Title
  
  Applied Physics Letters
  
  Volume: 108 Issue: 2 Pages: 023501-023501
- DOI
  10.1063/1.4939861
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06309, KAKENHI-PROJECT-16H04332
[Journal Article] Effect of excimer laser annealing on a-IngaZnO thin-film transistors passivated by solution-processed hybrid passivation layers2016
- Author(s)
  J. P. Bermundo, Y.ishikawa, M.N.Fujii, T.Nonaka, R. Ishikawa, H. Ikenoue and Y.Uraoka
- Journal Title
  
  J. Phys. D. Appl. Phys.
  
  Volume: 49 Issue: 3 Pages: 035102-035109
- DOI
  10.1088/0022-3727/49/3/035102
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-16H04332
[Journal Article] Effect of contact material on amorphous InGaZnO thin-film transistor characteristics2014
- Author(s)
  Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo, Haruka Yamazaki, Satoshi Urakawa, Yukihiro Osada, Masahiro Horita, and Yukiharu Uraoka
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53 Issue: 3S1 Pages: 03CC04-03CC04
- DOI
  10.7567/jjap.53.03cc04
- NAID
  210000143472
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25820125
[Journal Article] Analysis of printed silver electrode on amorphous indium gallium zinc oxide2014
- Author(s)
  Yoshihiro Ueoka, Takahiro Nishibayashi, Yasuaki Ishikawa, Haruka Yamazaki, Yukihiro Osada, Masahiro Horita, and Yukiharu Uraoka
- Journal Title
  
  Jpn. J. App. Phys.
  
  Volume: 53 Issue: 4S Pages: 04EB03-04EB03
- DOI
  10.7567/jjap.53.04eb03
- NAID
  210000143551
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25820125
[Journal Article] Highly Reliable Polysilsesquioxane Passivation Layer for a-InGaZnO Thin-Film Transistors2013
- Author(s)
  Juan Paolo Bermundo, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka and Yukiharu Uraoka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 3, 2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Thermal Distribution in Amorphous InSnZnO Thin-Film Transistor2013
- Author(s)
  Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa and Yukiharu Uraoka
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10, 11 Pages: 1561-1564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Highly Reliable Polysilsesquioxane Passivation Layer for a-InGaZnO Thin-Film Transistors2013
- Author(s)
  Juan Paolo Bermundo, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka, and Yukiharu Uraoka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 3 Issue: 2 Pages: Q16-Q19
- DOI
  10.1149/2.011402jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delived by ferritin2013
- Author(s)
  M. Uenuma, B. Zheng, K. Bundo, M. Horita, Y.Ishikawa, H.Watanabe, I. Yamashita and Y. Uraoka
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 382 Pages: 31-35
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Effect of Contact Material on Amorphous InGaZnO Thin-Film Transistor Characteristics2013
- Author(s)
  Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo, Haruka Yamazaki, Satoshi Urakawa, Yukihiro Osada, Masahiro Horita, and Yukiharu Uraoka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53, 3S1
- NAID
  210000143472
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Thermal Distribution in Amorphous InSnZnO Thin-Film Transistor2013
- Author(s)
  Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa, and Yukiharu Uraoka
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Issue: 11 Pages: 1561-1564
- DOI
  10.1002/pssc.201300253
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137, KAKENHI-PROJECT-23560408
[Journal Article] Thermal Reversibility in Electrical Characteristics of Ultraviolet/Ozone-Treated Graphene2013
- Author(s)
  Yana Mulyana, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, and Shinji Koh
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 103 Issue: 6 Pages: 3107-3111
- DOI
  10.1063/1.4818329
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137, KAKENHI-PROJECT-25600043
[Journal Article] Size Control in ZnO Nano-Pillar Fabrication Using a Gel-Nanoimprint Process2013
- Author(s)
  Yasuaki Ishikawa, Shinji Araki, Min Zhang and Yukiharu Uraoka
- Journal Title
  
  Applied Mechanics and Materials
  
  Volume: 372 Pages: 149-152
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Characterizations of Al2O3 Gate Dielectric Deposited on n-GaN by Plasma-Assisted Atomic Layer Deposition2013
- Author(s)
  Koji Yoshitsugu, Masahiro Horita, Yasuaki Ishikawa, and Yukiharu Uraoka
- Journal Title
  
  Physica Status Solidi C,
  
  Volume: 10 Issue: 11 Pages: 1426-1429
- DOI
  10.1002/pssc.201300273
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Analysis of Electronic Structure of Amorphous InGaZnO/SiO2 Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy2013
- Author(s)
  Yoshihiro Ueoka, Yasuaki Ishikawa, Naoyuki Maejima, Fumihiko Matsui, Hirosuke Matsui, Haruka Yamazaki, Satoshi Urakawa, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Daimon, and Yukiharu Uraoka
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 114, 16 Pages: 163713-163713
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors2013
- Author(s)
  H. Yamazaki, Y. Ishikawa, M. Fujii, Y. Ueoka, M. Fujiwara, E. Takahashi, Y. Andoh, N. Maejima, H. Matsui, F. Matsui, H. Daimon, Y. Uraoka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 3 Issue: 2 Pages: 20-23
- DOI
  10.1149/2.014402jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J09374, KAKENHI-PROJECT-23360137, KAKENHI-PROJECT-25287075
[Journal Article] Characterizations of Al2O3 Gate Dielectric Deposited on n-GaN by Plasma-Assisted Atomic Layer Deposition2013
- Author(s)
  Koji Yoshitsugu, Masahiro Horita, Yasuaki Ishikawa and Yukiharu Uraoka
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10, 11 Pages: 1426-1429
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability Toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors2013
- Author(s)
  Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Yoshihiro Ueoka, Masaki Fujiwara, Eiji Takahashi, Yasunori Ando, Naoyuki Maejima, Hirosuke Matsui, Fumihiko Matsui, Hiroshi Daimon and Yukiharu Uraoka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 3, 2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Polycrystalline Silicon Thin-Film Transistor Utilizing Self-Assembled Monolayer for Crystallization2013
- Author(s)
  Yosuke Tojo, Atsushi Miura, Yasuaki Ishikawa, Ichiro Yamashita and Yukiharu Uraoka
- Journal Title
  
  Thin Solid Films
  
  Volume: 540 Pages: 266-270
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Memristive Nanoparticles Formed Using a Biotemplate2013
- Author(s)
  Mutsunori Uenuma, Takahiko Ban, Naofumi Okamoto, Bin Zheng, Yasuhiro Kakihara, Masahiro Horita, Yasuaki Ishikawa, Ichiro Yamashita, and Yukiharu Uraoka
- Journal Title
  
  Royal Society of Chemical Advances
  
  Volume: 3 Pages: 18044-18048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Thermal Reversibility in Electrical Characteristics of Ultraviolet/Ozone-Treated Graphene2013
- Author(s)
  Yana Mulyana, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, and Shinji Koh
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 103, 6 Pages: 3107-3111
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137
[Journal Article] Three-Dimensional Nanodot-Type Floating Gate Memory Fabricated by Bio-Layer-by-Layer Method2011
- Author(s)
  K.Ohara, B.Zheng, M.Uenuma, Y.Ishikawa, K.Shiba, I.Yamashita, Y.Uraoka
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Issue: 8 Pages: 85004-85004
- DOI
  10.1143/apex.4.085004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J08129, KAKENHI-PROJECT-23360137
[Journal Article] Unque Phenomenon in Degradation of Amorphous In_2O_3-Ga_2O_3-ZnO Thin-Film Transistors under Dynamic Stress2011
- Author(s)
  Mami Fujii
- Journal Title
  
  Appl.Phys.Express
  
  Volume: 4 Issue: 10 Pages: 104103-104105
- DOI
  10.1143/apex.4.104103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09J09384, KAKENHI-PROJECT-23360137, KAKENHI-PROJECT-23560408
[Patent] 保護膜を具備するはくトランジスタ基板およびその製造方法2014
- Inventor(s)
  石河泰明、浦岡行治
- Industrial Property Rights Holder
  石河泰明、浦岡行治
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-017619
- Filing Date
  2014-01-31
- Data Source
  KAKENHI-PROJECT-23360137
[Patent] 保護膜を具備する薄膜トランジスタ基板及びその製造方法2013
- Inventor(s)
  石河泰明, 浦岡行治
- Industrial Property Rights Holder
  石河泰明, 浦岡行治
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-017619
- Filing Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-23360137
[Presentation] Development of three-dimensional periodic nanostructured film using SU-8 template and solution-derived ZnO for the thermoelectric materials2022
- Author(s)
  Naoya Miyajima, Itsuki Nakahara, Yasuaki Ishikawa
- Organizer
  35th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02621
[Presentation] ZnO溶液を用いたテンプレートプロセスによる三次元周期的ナノ構造の作製2020
- Author(s)
  王旭東方, 石河泰明, 上沼睦典, 浦岡行治
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05032
[Presentation] Effects of phase shift mask design on three-dimension nanostructure fabrication2020
- Author(s)
  Pongsakorn Sihapitak, Yasuaki Ishikawa, Xudongfang Wang, Mutsunori Uenuma, Yukiharu Uraoka
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05032
[Presentation] Relationship of Phase Shift Mask Design and Size of Three-Dimension Nanostructures2020
- Author(s)
  P. Sihapitak, Y. Ishikawa, X. Wang, M. Uenuma, and Y. Uraoka
- Organizer
  The 27th International Workshop on Active-Matrix Flatpanel Displays-TFT Technologies and FPD Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02621
[Presentation] Trapping reduction of SiO2/GaN MOS structure by high pressure water vapor annealing2019
- Author(s)
  Lin Tenda, 上沼睦典、石河泰明、浦岡行治
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] SiO2/GaN界面の固定電荷に対するGaN表面状態の影響2019
- Author(s)
  上沼睦典、石河泰明、浦岡行治
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Inducing Thermoelectricity in C-axis Aligned Crystalline InGaZnO Thin Film via Hydrogen Annealing2019
- Author(s)
  Jenichi Clairvaux Felizco, Hoshito Murakawa, Yasuaki Ishikawa, Yukiharu Uraoka
- Organizer
  International Conference on Solid State Devices and Materials 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02601
[Presentation] Removing Process of the Three-Dimension Periodic Nanostructure Fabricated from KMPR Photoresist2018
- Author(s)
  Xudongfang Wang, Yasuaki Ishikawa, Mutsunori Uenuma and Yukiharu Uraoka
- Organizer
  31st International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05032
[Presentation] Improvement of SiO2/GaN Interface Characteristics by High Pressure Water Vapor Annealing2018
- Author(s)
  Masaaki Furukawa, Mutsunori Uenuma, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Leakage reduction of SiO2/GaN MOS structure by high pressure water vapor annealing2018
- Author(s)
  Lin Tengda, Mutsunori Uenuma, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Effects of ALD-Precursor on Al2O3/GaN MOS Characteristics2018
- Author(s)
  Mutsunori Uenuma, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Effects of Annealing Time in High Pressure Water Vapor Annealing for ALD-Al2O3/GaN MOS2018
- Author(s)
  Tsubasa Nakamura, Mutsunori Uenuma, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] 高圧水蒸気処理を用いたGaOx層形成によるSiO2/GaN界面の特性評価2018
- Author(s)
  安藤領汰、上沼睦典、石河泰明、浦岡行治
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Analysis of Mg-implanted GaN films after rapid activation via excimer laser annealing2018
- Author(s)
  Juan Paolo Bermundo, Mutsunori Uenuma, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Analyses of Electronic and Atomic Structures of Insulator/GaN Interface by Photoelectron Diffraction and Spectroscopy2018
- Author(s)
  Yuta Fujimoto, Mutsunori Uenuma, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] ALD-Al2O3/GaN MOSにおける高圧水蒸気処理の時間依存性2018
- Author(s)
  中村翼、上沼睦典、石河泰明、浦岡行治
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Three-dimension periodic nano-structure fabricated by proximity nano-patterning process2017
- Author(s)
  Xudongfang Wang, Yasuaki Ishikawa, Shinji Araki, Yukiraru Uraoka, and Seokwoo Jeon
- Organizer
  電子情報通信学会　電子ディスプレイ研究会
- Data Source
  KAKENHI-PROJECT-17K05032
[Presentation] Interfacial Analysis of Ionogel Gated In2Ga2Zn1O7 Thin Film Transistors2017
- Author(s)
  Mami N. Fujii, Hiromi Okada, Kenta Komori, Kazumoto Miwa, Shimpei Ono, Juan Paolo Bermundo, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Bimetal-catalyzed formation of InGaZnO nanowires from amorphous thin film2017
- Author(s)
  Jenichi Clairvaux Felizco, Mutsunori Uenuma, Daiki Senaha, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  5th Nano Today Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Fabrication of perovskite solar cells using sputter processed perovskite films2017
- Author(s)
  來福至、石河泰明、Tiphaine Bourgeteau、伊藤省吾、Yvan Bonnassieux、Pere Roca I Cabarrocas、浦岡行治
- Organizer
  Asia Pacific Hybrid and Organic Photovoltaics Conference
- Place of Presentation
  パシフィコ横浜(神奈川県横浜市）
- Year and Date
  2017-02-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] RELATION OF ELECTROLUMINESCENCE INTENSITY AND POTENTIAL INDUCED DEGRADATION TEST TIME ON P-TYPE MONOCRYSTALLINE SILION PHOTOVOLTAIC MODULEAND POTENTIAL INDUCED DEGRADATION TEST TIME ON P-TYPE MONOCRYSTALLINE SILION PHOTOVOLTAIC MODULE2017
- Author(s)
  Takuya Oshima, Kazuki Noguchi, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  PVSEC-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] DEVICE MODELING OF IRON PYRITE SOLAR CELL FOR HIGH CONVERSION EFFICIENCY2017
- Author(s)
  Shunsuke Uchiyama, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  The 27th International Photovoltaic Science and Engineering Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Consideration of Temperature Correction of Open Circuit Voltage Calculated from EL Intensity for Outdoor Measurement2017
- Author(s)
  Daisuke Kobayashi, Takuya Oshima, Kazuki Noguchi, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  The 27th Photovoltaic Science and Engineering Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Effect of UV/Ozone Treatment on Self-Aligned InZnO Thin-Film Transistors towards an All-Solution Process2017
- Author(s)
  Chaiyanan Kulchaisit, Juan Paolo Bermundo, Mami N. Fujii, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  MRS Fall 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Excimer laser annealing of solution-processed InZnO thin-film2017
- Author(s)
  Juan Paolo Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Chaiyanan Kulchaisit, Hiroshi Ikenoue, and Yukiharu Uraoka
- Organizer
  MRS Fall 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Sheet Resistance Reduction of a-IGZO by Oxygen Vacancy Control using Low Temperature Excimer Laser Irradiation2016
- Author(s)
  Juan Paolo Bermundo、Yasuaki Ishikawa、Mami N. FujiiHiroshi Ikenoue、Yukuharu Uraoka
- Organizer
  2016 MRS Fall Meeting & Exhibit
- Place of Presentation
  Boston, USA
- Year and Date
  2016-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Analysis of High Mobility Oxide Thin-Film Transistors after a Low Temperature Annealing Process2016
- Author(s)
  Juan Paolo Bermundo、Yasuaki Ishikawa、Mami N. Fujii、Chaiyanan Kulchaisit、Hiroshi Ikenoue、Yukuharu Uraoka
- Organizer
  The 23rd International Display Workshops
- Place of Presentation
  福岡国際会議場(福岡県福岡市）
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Study of oxygen plasma damage introduced at Al2O3/GaN interface　during atomic layer deposition process2016
- Author(s)
  Yuta Fujimoto、Katsunori Ueno、Koji Yoshitsugu、Masahiro Horita,Uenuma Mutsunori、Yasuaki Ishikawa、Yukiharu Uraoka
- Organizer
  2016 International Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, FL USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Control of the interface and the film quality of SiO2 / GaN MOS by　high pressure water vapor annealing2016
- Author(s)
  Yuta Tominaga、Katsunori Ueno、Koji Yoshitsugu、Uenuma Mutsunori、Yuta Fujimoto、Yasuaki Ishikawa、Yukiharu Uraoka
- Organizer
  2016 International Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, FL USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] Thermal analysis and device simulation of heat suppressed structure for oxide thin-film transistor2016
- Author(s)
  木瀬香保利、藤井茉美、Juan Paolo Bermondo、石河泰明、浦岡行治
- Organizer
  The 23rd International Display Workshops
- Place of Presentation
  福岡国際会議場(福岡県福岡市）
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04332
[Presentation] ウェットO2アニールを用いた液体材料由来の非晶質InZnO薄膜の作製とトランジスタ特性への影響2015
- Author(s)
  長田至弘、石河泰明、藤井茉美、浦岡行治
- Organizer
  応用物理学会関西支部第三回講演会
- Place of Presentation
  奈良先端科学技術大学院大学、奈良県生駒市
- Year and Date
  2015-02-27
- Data Source
  KAKENHI-PROJECT-25820125
[Presentation] Interface Control toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors2014
- Author(s)
  Yasuaki Ishikawa, Juan Paolo Bermund, Haruka Yamazaki, Mami Fujii, and Yukiharu Uraoka
- Organizer
  The 14th International meeting on information display
- Place of Presentation
  EXCO, Daegu, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-25820125
[Presentation] Unique Property of a-InGaZnO/Ag Interface on Thin Film Transistor2013
- Author(s)
  Y. Uraoka, Y.Ishikawa and Y.Uraoka
- Organizer
  20th International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  Kyoto
- Year and Date
  2013-07-03
- Data Source
  KAKENHI-PROJECT-23360137
[Presentation] 溶液プロセスで作製したアモルファスInZnO薄膜トランジスタ特性に対するバックチャネルの影響2013
- Author(s)
  長田至弘、石河泰明、呂莉、浦岡行治
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学、京都
- Data Source
  KAKENHI-PROJECT-25820125
[Presentation] Unique property of a-InGaZnO/Ag Interface on Thin-Film Transistor2013
- Author(s)
  Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo, Haruka Yamazaki, Satoshi Urakawa, Yukihiro Osada, Masahiro Horita, and Yukihiro Uraoka
- Organizer
  The 20th Internaitonal workshop on active-materix flat panel displays and devices
- Place of Presentation
  Avanti Kyoto Hall, Kyoto
- Data Source
  KAKENHI-PROJECT-25820125
[Presentation] Effect of Back Channel on the Characteristics of Solution-Derived Amorphous InZnO Thin-Film Transistors2013
- Author(s)
  Yukihiro Osada, Yasuaki Ishikawa, Li Lu, and Yukiharu Uraoka
- Organizer
  20th International display workshop
- Place of Presentation
  Sapporo Covention Center, Hokkaido
- Data Source
  KAKENHI-PROJECT-25820125
[Presentation] Thermal distribution in Amorphous InSnZnO Thin Film Transistors2013
- Author(s)
  S.Urakawa, Y.Ishikawa and Y.Uraoka
- Organizer
  The 40th International Symposium on Compound Semiconductors
- Place of Presentation
  Kobe
- Year and Date
  2013-05-21
- Data Source
  KAKENHI-PROJECT-23360137
[Presentation] Analysis of Printed Ag Electrode on a-InGaZnO2013
- Author(s)
  Yoshihiro Ueoka, Takahiro Nishibayashi, Yasuaki Ishikawa, Haruka Yamazaki, Yukihiro Osada, Masahiro Horita, and Yukiharu Uraok
- Organizer
  45th International conference of solid state devices and materials
- Place of Presentation
  Hilton Fukuoka Sea Hawk, Fukuoka
- Data Source
  KAKENHI-PROJECT-25820125
[Presentation] Size Control in ZnO Nano-Pillar Fabrication using Gel-Nanoimprint Process2013
- Author(s)
  Yasuaki Ishikawa, Shinji Araki, Min Zhang and Yukiharu Uraoka
- Organizer
  2nd Int'l, Conf. on Adv. Mat. Design and Mech
- Place of Presentation
  Osaka
- Year and Date
  2013-05-18
- Data Source
  KAKENHI-PROJECT-23360137
[Presentation] Printability of Screen Printed Silver for Oxide Thin-Film Transistor toward a Printable Device
- Author(s)
  Satoshi Urakawa, Yasuaki Ishikawa, Yukihiro Osada, Mami Fujii, Masahiro Horita, and Yukiharu Uraoka
- Organizer
  The 21st International Display Workshops
- Place of Presentation
  朱鷺メッセ新潟コンベンションセンター、新潟県新潟市
- Year and Date
  2014-12-02 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-25820125
[Presentation] Size Control in ZnO Nano-Pillar Fabrication Using a Gel-Nanoimprint Process
- Author(s)
  Yasuaki Ishikawa, Shinji Araki, Min Zhang, and Yukiharu Uraoka
- Organizer
  2nd Int'l Conf. on Adv. Mat. Design and Mech.
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-23360137
[Presentation] 塗布型a-InZnO薄膜トランジスタに向けた銀ナノペーストの印刷適性
- Author(s)
  浦川哲、石河泰明、長田至弘、藤井茉美、堀田昌宏、浦岡行治
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、神奈川県平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25820125
[Presentation] Effect of Wet-O2 Annealing on the Characteristics of Solution-Derived Amorphous InZnO Thin-Film Transistors
- Author(s)
  Yukihiro Osada, Yasuaki Ishikawa, Mami Fujii, and Yukiharu Uraoka
- Organizer
  The 21st International Display Workshops
- Place of Presentation
  朱鷺メッセ新潟コンベンションセンター、新潟県新潟市
- Year and Date
  2014-12-02 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-25820125
[Presentation] Evaluation of TaOx Nanoparticles for Resistive Random Access Memory
- Author(s)
  Keisuke Kado, Takahiko Ban, Mutsunori Uenuma, Yasuaki Ishikawa, Ichiro Yamashita, and Yukiharu Uraoka
- Organizer
  2013 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-23360137
[Presentation] 溶液プロセスによる非晶質InZnO薄膜トランジスタ特性に対する湿式酸素アニールの影響
- Author(s)
  長田至弘、石河泰明、藤井茉美、浦岡行治
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、神奈川県平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25820125
[Presentation] Unique Property of a-InGaZnO/Ag Interface on Thin-Film Transistor
- Author(s)
  Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo, Haruka Yamazaki, Satoshi Urakawa, Yukihiro Osada, Masahiro Horita, and Yukiharu Uraoka
- Organizer
  20th International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-23360137
[Presentation] Themal Distribution in Amorphous InSnZnO Thin-Film Transistor
- Author(s)
  Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa, and Yukiharu Uraoka
- Organizer
  The 40th International Symposium on Compound Semiconductors
- Place of Presentation
  Kobe
- Data Source
  KAKENHI-PROJECT-23360137

1. URAOKA Yukiharu (20314536)

# of Collaborated Projects: 3 results

# of Collaborated Products: 63 results
2. 上沼睦典 (20549092)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
3. KIMURA Mutsumi (60368032)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. NISHIDA Takashi (80314540)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. HORITA Masahiro (50549988)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
6. Bermundo J.P.S (60782521)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
7. UEOKA Yoshihiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
8. BERMUNDO Juan Paolo

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. OSADA Yukihiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
10. 古田守

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
11. 藤井茉美

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Ishikawa Yasuaki 石河 泰明

ISHIAKAWA Yasuaki 石河 泰明

Research Projects

Research Products

Co-Researchers

Design and development of structural-anisotropic three-dimensional phononic crystal toward low thermal conductivity materialPrincipal Investigator

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Research on high performance flexible thermoelectric device focusing on heat transport in amorphous oxide semiconductor

Principal Investigator

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Review Section

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Effect of three-dimensional Si phononic crystal on thermal-electric characteristicsPrincipal Investigator

Principal Investigator

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Research Institution

Highly reliable GaN power device fabricated using supercritical water

Principal Investigator

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Low temperature process in printed thin-film transistors toward high-resolution flexible displaysPrincipal Investigator

Principal Investigator

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Research Institution

Low temperature polycrystalline thin film transistors for next generation high performance display

Principal Investigator

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Research Institution

[Journal Article] Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Development of High-Reliability and -Stability Chemical Sensors Based on an Extended-Gate Type Amorphous Oxide Semiconductor Thin-Film Transistor2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Temperature Photosensitive Passivation2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation2020

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Unique degradation under AC stress in high-mobility amorphous InWZnO thin-film transistors2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Physical and electrical properties of ALD-Al2O3/GaN MOS capacitor annealed with high pressure water vapor2019

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Removing Process of the Three-Dimension Periodic Nanostructure Fabricated from KMPR Photoresist2019

Author(s)

Ishikawa Yasuaki 石河泰明

ISHIAKAWA Yasuaki 石河泰明