Hanafusa Hiroaki 花房宏明

… Alternative Names

HANAFUSA HIROAKI 花房宏明

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Researcher Number	70630763
Other IDs
Affiliation (Current)	2025: 広島大学, 先進理工系科学研究科(先), 准教授
Affiliation (based on the past Project Information) *help	2025: 広島大学, 先進理工系科学研究科(先), 准教授 2021 – 2022: 広島大学, 先進理工系科学研究科(先), 准教授 2020: 広島大学, 先進理工系科学研究科(先), 助教 2016 – 2018: 広島大学, 先端物質科学研究科, 助教 2013 – 2014: 広島大学, 先端物質科学研究科, 助教
Review Section/Research Field	Principal Investigator Basic Section 29020:Thin film/surface and interfacial physical properties-related / Crystal engineering / Electronic materials/Electric materials
Keywords	Principal Investigator オーミックコンタクト / 炭化ケイ素 / 最表面欠陥 / 高温動作 / シリコンカーバイド / エネルギーバンド / シリサイド化熱処理 / Siドット / シリコンドーム / コンタクト … More / 表面欠陥 / シリコン / 結晶工学 / 解析・評価 / 半導体物性 / 表面・界面物性 / 電子顕微鏡 / 局所的結晶配列 / 結晶の均質性 / 欠陥密度分布 / 結晶欠陥 / 菊池線 / 電子線後方散乱 / 結晶分布評価 / Si/SiCヘテロ接合 / ワイドバンドギャップ半導体 / シリコン挿入層 Less

Research Projects
(4 results)
Research Products
(10 results)

Study on Surface Structure and Long-Term High-temperature Stability for Silicon-cap annealed SiCPrincipal Investigator
- Principal Investigator
  
  花房宏明
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Hiroshima University
Investigation on control of SiC surface and silicide-less contact using silicon-cap-annealingPrincipal Investigator
- Principal Investigator
  
  HANAFUSA HIROAKI
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Hiroshima University
Development of Local Semiconductor Crystalline Quality Estimation Method by Electron Back Scatter DiffractionPrincipal Investigator
- Principal Investigator
  
  Hanafusa Hiroaki
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Hiroshima University
Development of defect-controlled hetero-junction contact with amorphous silicon insertionPrincipal Investigator
- Principal Investigator
  
  HANAFUSA HIROAKI
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University

All 2022 2020 2019 2017 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Estimation of Phosphorus-implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis2015
- Author(s)
  Hiroaki Hanafusa, Keisuke Maruyama, Shohei Hayashi, and Seiichiro Higashi
- Journal Title
  
  Materials Science Forum
  
  Volume: 821-823 Pages: 391-394
- DOI
  10.4028/www.scientific.net/msf.821-823.391
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25870466
[Journal Article] Properties of Al Ohmic contacts to n-type 4H-SiC employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer2014
- Author(s)
  Hiroaki Hanafusa, Akio Ohta, Ryuhei Ashihara, Keisuke Maruyama, Tsubasa Mizuno, Shohei Hayashi, Hideki Murakami, and Seiichiro Higashi
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 649-652
- DOI
  10.4028/www.scientific.net/msf.778-780.649
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25870466
[Presentation] a-Si:H膜を用いたSiCへのシリコンキャップアニールと Siドット形成の低温化2022
- Author(s)
  花房宏明, 東清一郎
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05328
[Presentation] シリコンキャップアニールを行った4H-SiC表面の電気伝導機構の解析2020
- Author(s)
  花房　宏明、　東堂　大地、　東　清一郎
- Organizer
  81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05328
[Presentation] 菊池線パターン解析によるSi結晶内の欠陥量評価法の開発2019
- Author(s)
  花房　宏明
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K13675
[Presentation] 菊池線パターン解析による結晶欠陥評価の研究2017
- Author(s)
  沖　昴志、花房　宏明、東　清一郎
- Organizer
  薄膜材料デバイス研究会　第14回研究集会
- Data Source
  KAKENHI-PROJECT-16K13675
[Presentation] Si 挿入層の不純物濃度に依存した4H-SiC のコンタクト特性2014
- Author(s)
  廣松志隆、花房宏明、丸山佳祐、石丸凌輔、東清一郎
- Organizer
  2014年度　応用物理・物理系学会中国四国支部　合同学術講演会
- Place of Presentation
  島根大学, 島根県
- Year and Date
  2014-07-26
- Data Source
  KAKENHI-PROJECT-25870466
[Presentation] Contact Property of 4H-SiC with Phosphorus-Doped and Crystallized Amorphous-Silicon Insertion Layer2013
- Author(s)
  Hiroaki Hanafusa, Akio Ohta, Ryuhei Ashihara, Keisuke Maruyama, Tsubasa Mizuno, Shohei Hayashi, Hideki Murakami, and Seiichiro Higashi
- Organizer
  International Conference of Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki, Japan
- Data Source
  KAKENHI-PROJECT-25870466
[Presentation] Estimation of Phosphorus-implanted 4H-SiC Layer Activation by EBSD pattern analysis
- Author(s)
  Hiroaki Hanafusa, Keisuke Maruyama, Shohei Hayashi, and Seiichiro Higashi
- Organizer
  10th European Conference on Silicon Carbide and Related Materials (ECSCRM2014)
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25870466
[Presentation] EBSD パターン明瞭度を用いたリン注入4H-SiC 層の結晶性評価
- Author(s)
  花房宏明、丸山佳祐、林　将平、東清一朗
- Organizer
  第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25870466

Hanafusa Hiroaki 花房 宏明

HANAFUSA HIROAKI 花房 宏明

Research Projects

Research Products

Study on Surface Structure and Long-Term High-temperature Stability for Silicon-cap annealed SiCPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Investigation on control of SiC surface and silicide-less contact using silicon-cap-annealingPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of Local Semiconductor Crystalline Quality Estimation Method by Electron Back Scatter DiffractionPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of defect-controlled hetero-junction contact with amorphous silicon insertionPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Estimation of Phosphorus-implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Properties of Al Ohmic contacts to n-type 4H-SiC employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer2014

Author(s)

Journal Title

DOI

Data Source

[Presentation] a-Si:H膜を用いたSiCへのシリコンキャップアニールと Siドット形成の低温化2022

Author(s)

Organizer

Data Source

[Presentation] シリコンキャップアニールを行った4H-SiC表面の電気 伝導機構の解析2020

Author(s)

Organizer

Data Source

[Presentation] 菊池線パターン解析によるSi結晶内の欠陥量評価法の開発2019

Author(s)

Organizer

Data Source

[Presentation] 菊池線パターン解析による結晶欠陥評価の研究2017

Author(s)

Organizer

Data Source

[Presentation] Si 挿入層の不純物濃度に依存した4H-SiC のコンタクト特性2014

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Contact Property of 4H-SiC with Phosphorus-Doped and Crystallized Amorphous-Silicon Insertion Layer2013

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Estimation of Phosphorus-implanted 4H-SiC Layer Activation by EBSD pattern analysis

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] EBSD パターン明瞭度を用いたリン注入4H-SiC 層の結晶性評価

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

Hanafusa Hiroaki 花房宏明

HANAFUSA HIROAKI 花房宏明

[Presentation] シリコンキャップアニールを行った4H-SiC表面の電気伝導機構の解析2020