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Gotow Takahiro  後藤 高寛

… Alternative Names

GOTOW Takahiro  後藤 高寛

GOTOW TAKAHIRO  後藤 高寛

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Researcher Number 70827914
Other IDs
  • ORCIDhttps://orcid.org/0000-0001-9052-2950
Affiliation (Current) 2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員
Affiliation (based on the past Project Information) *help 2023 – 2024: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員
2021 – 2023: 東京工業大学, 工学院, 助教
2019: 東京工業大学, 工学院, 助教
2018 – 2019: 国立研究開発法人情報通信研究機構, 未来ICT研究所フロンティア創造総合研究室, 研究員
Review Section/Research Field
Principal Investigator
Basic Section 21050:Electric and electronic materials-related / Basic Section 21060:Electron device and electronic equipment-related / 0302:Electrical and electronic engineering and related fields
Except Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related
Keywords
Principal Investigator
TFET / MOCVD / 高周波デバイス / 窒化物半導体デバイス / III-V semiconductors / MOSFET / III-V族化合物半導体 / トンネルトランジスタ / InGaAs / GaAsSb / MOS界面準位 … More
Except Principal Investigator
… More 横方向結晶成長 / トンネルFE / 横方向成長 / バイポーラトランジスタ / 化合物半導体 / ナノシート / 低消費電力 / ラテラルHBT / トンネルFET / ヘテロ構造 Less
  • Research Projects

    (4 results)
  • Research Products

    (6 results)
  • Co-Researchers

    (4 People)
  •  InNチャネル高電子移動度トランジスタ実現に向けた結晶成長技術と極性制御Principal Investigator

    • Principal Investigator
      後藤 高寛
    • Project Period (FY)
      2024 – 2025
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  Lateral nano-sheet channel tunnel FETs using regrowth technology in source and drain regionPrincipal Investigator

    • Principal Investigator
      GOTOW Takahiro
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
      Tokyo Institute of Technology
  •  Creation of compound semiconductor lateral heterojunctions and their application to electronic devices

    • Principal Investigator
      Miyamoto Yasuyuki
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Tokyo Institute of Technology
  •  Study on tunnel field effect transistors for ultra-low power analog devicesPrincipal Investigator

    • Principal Investigator
      GOTOW TAKAHIRO
    • Project Period (FY)
      2018 – 2019
    • Research Category
      Grant-in-Aid for Research Activity Start-up
    • Review Section
      0302:Electrical and electronic engineering and related fields
    • Research Institution
      Tokyo Institute of Technology
      National Institute of Information and Communications Technology

All 2019 2018

All Journal Article Presentation

  • [Journal Article] 材料エンジニアリングによるトンネル電界効果トランジスタの高性能化2019

    • Author(s)
      (2)高木信一, 加藤公彦, 安大煥, 後藤高寛, 松村亮, 高口遼太郎, 竹中充
    • Journal Title

      電子情報通信学会論文誌 C

      Volume: Vol. J102-C, NO.3 Pages: 61-69

    • Data Source
      KAKENHI-PROJECT-19K21084
  • [Journal Article] Drive current enhancement of Si MOSFETs by using anti-ferroelectric gate insulators2019

    • Author(s)
      Yamaguchi Masashi、Gotow Takahiro、Takenaka Mitsuru、Takagi Shinichi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SB Pages: SBBA15-SBBA15

    • DOI

      10.7567/1347-4065/ab073b

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21084
  • [Presentation] InP基板上引張歪GaAsSbとInGaAsの膜厚増加による結晶性劣化の比較2019

    • Author(s)
      満原学, 星拓也, 杉山弘樹, 後藤高寛, 竹中充, 高木信一
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K21084
  • [Presentation] MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI2018

    • Author(s)
      (5)S. Takagi, K. Kato, W.-K. Kim, K. Jo, R. Matsumura, R. Takaguchi, D.-H. Ahn, T. Gotow, M. Takenaka
    • Organizer
      48th European Solid-State Device Research Conference (ESSDERC)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21084
  • [Presentation] Performance enhancement of Si MOSFETs using anti-ferroelectric thin films as gate insulators2018

    • Author(s)
      M. Yamaguchi, T. Gotow, M. Takenaka, S. Takagi
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21084
  • [Presentation] Improvement of ION and S.S. values of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical TFETs by using abrupt source impurity profile2018

    • Author(s)
      T. Gotow, M. Mitsuharu, T. Hoshi, H. Sugiyama, M. Takenaka, S. Takagi
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21084
  • 1.  Miyamoto Yasuyuki (40209953)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 2.  福田 浩一 (00586282)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 3.  菅原 聡 (40282842)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  荒井 昌和 (90522003)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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