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JIMBO Takashi  神保 孝志

ORCIDConnect your ORCID iD *help
Researcher Number 80093087
Other IDs
External Links
Affiliation (based on the past Project Information) *help 2005 – 2008: 名古屋工業大学, 工学研究科, 教授
2004 – 2005: 名古屋工業大学, 大学院・工学研究科, 教授
1998 – 2003: 名古屋工業大学, 工学研究科, 教授
1999 – 2000: Nagoya Institute of Technology, Graduates Schoolof Engineering, Professor, 都市循環システム工学専攻, 教授
1994 – 1997: 名古屋工業大学, 極微構造デバイス研究センター, 教授
1994: 名古屋工業大学, 工学部, 教授
1987: Nagoya Institute of Technology, 工学部, 助教授
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Science and Engineering
Except Principal Investigator
Applied optics/Quantum optical engineering / Electron device/Electronic equipment / 電子材料工学 / Applied materials science/Crystal engineering / Electronic materials/Electric materials / エネルギー学一般・原子力学
Keywords
Principal Investigator
opt-electronic integrated circuit / optical waveguide / porous silicon / 多孔性シリコン / 導波路 / 光電子集積回路 / 光導波路 / 多孔質シリコン / プラズマパッシベーション / GaInN LED … More / 量子ドットレーザ / GaAs系レーザ / Si基板 / 多波長発光素子 / 多層膜反射鏡 / 欠陥不活性化 / ウエハ接着 / 有機金属気相成長 / Si基板上GaN / Si基板上GaAs / 半導体レーザ / 発光ダイオード / GaAs / Si / GaN / ヘテロエピタキシ … More
Except Principal Investigator
GaAs / MOCVD / 転位 / 歪超格子 / Si / 有機金属気相成長法 / LPE / シリコン基板 / ガリウム砒素 / GaN / AlGaN / Dislocation / 有機金属気相成長 / Si substrate / 少数キャリア寿命 / AlGaAs / 発光ダイオード / GaAs Strained layer superlattice / InP / Hybrid growth / 可視光レーザ / 混晶半導体 / GaAsPLED / レーザ / 燐化インジウム / Photoluminescence / Minority Carrier Lifetime / Solar Cell / Passivation / Defects / Silicon Substrate / Gallium Arsenide / フォスフィン / 水素プラズマ / フォトルミネセンス / 太陽電池 / 不活性化 / 欠陥 / Si MESFET / Si electronic device / Si light emitting device / Si tandem solar cell / Si laser / GaN on Si substrate / GaAs on Si substrate / Heteroepitaxy / 直列抵抗 / 発光ダイオード(LED) / GaN中間層 / 有機金属気相成長(MOCVD) / エピタキシャルリフトオフ(ELO) / Si上ヘテロエピタキシー / Si上タンデム太陽電池 / Si上LED / Si上レーザー / GaAs on Si / Si上のヘテロエピタキシー / 転位の不活性化 / 高効率Si上タンデム太陽電池 / Si上青・緑色LED / 大面積Si上GaN基板 / GaN on Si / CaAs on Si / シリコン上化合物半導体 / Cavity / LED / Multi quantum well / an / distributed Bragg reflector / Vertical cavity surface emitting laser / P型窒化ガリウム / n型窒化ガリウム / 面発光レーザー / 束縛励起子 / 自由励起子 / InGaNダブルヘテロ構造 / 反射率 / クラック / 共振器 / シリコン / 多重量子井戸 / 窒化ガリウム / 分布型ブラッグ反射鏡 / 面発光型レーザー / Quantum well structure / Self-formed / Laser on Si / Lifetest / Island / Metalorganic chemical vapor deposition / Droplet epitaxy / シリコン上ガリウム砒素 / 熱処理 / 量子井戸レーザー / 寿命 / ピニング効果 / 暗線欠陥 / 量子井戸構造 / 自己形成 / シリコン上レーザー / 寿命試験 / 島状結晶 / ドロップレット / minority carrier lifetime / stress / dislocation / thermal cycle annealing / tandem solar cell / III-V on Si / 応力緩和 / 転位低減 / レーザ照射 / GaAs-on-Si / タイデム太陽電池 / 3端子出力 / 応力 / 熱サイクルアニール / Si基板 / タンデム太陽電池 / 偏光特性 / 半導体レーザ / エッチピット密度 / 二次元電子ガス / ヘテロ接合 / ショットキーダイオード / 高電子移動度トランジスター / X線回折 / フォトルミネッセンス / 量子井戸 / 窒化物半導体 / 四元混晶半導体 / 視覚系 / 動き検出 / 神経回路 / 特徴抽出 / アナログ電子回路 / 視覚情報処理 / ニューラルネットワーク / ヘテロ量子界面 / 半導体多層膜 / シリコン上面発光レーザー Less
  • Research Projects

    (12 results)
  • Research Products

    (3 results)
  • Co-Researchers

    (12 People)
  •  Study on quaternary GaN-based optoelectronic devices on large diameter Si substrate

    • Principal Investigator
      EGAWA Takashi
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Nagoya Institute of Technology
  •  アナログ集積回路による高度画像処理機能内蔵型視覚センサの設計と実現

    • Principal Investigator
      川口 雅司
    • Project Period (FY)
      2005 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Suzuka National College of Technology
  •  Research on Fundamentals of Opt-Electronic Integral Circuit on Silicon SubstratePrincipal Investigator

    • Principal Investigator
      JIMBO Takashi, 邵 春林
    • Project Period (FY)
      2004 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Nagoya Institute of Technology
  •  多波長光デバイス集積化のための異種材料一体化技術Principal Investigator

    • Principal Investigator
      神保 孝志
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Nagoya Institute of Technology
  •  Heteroepitaxy of GaAs and GaN on Si and their device applications

    • Principal Investigator
      UMENO Masayoshi
    • Project Period (FY)
      2000 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      CHUBU UNIVERSITY
      Nagoya Institute of Technology
  •  Passivation of dislocations in GaAs-on-Si

    • Principal Investigator
      SOGA Tetsuo
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Nagoya Institute of Technology
  •  Study on GaN-based blue vertical cavity surface emitting laser on Si

    • Principal Investigator
      EGAWA Takashi
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Nagoya Institute of Technology
  •  シリコン基板上の室温連続発振面発光レーザーに関する研究

    • Principal Investigator
      EGAWA Takashi
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Nagoya Institute of Technology
  •  Studies on high-efficiency and low-cost compound semiconductor/Si tandem solar cell

    • Principal Investigator
      UMENO Masayoshi
    • Project Period (FY)
      1994 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      エネルギー学一般・原子力学
    • Research Institution
      Nagoya Institute of Technology
  •  Fabrication of high-performance and long lifetime GaAs-based laser on Si substrate

    • Principal Investigator
      UMENO Masayoshi
    • Project Period (FY)
      1994 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Nagoya Institute of Technology
  •  シリコン上ガリウム砒素によるセンサ用新機能半導体レーザーの研究

    • Principal Investigator
      梅野 正義
    • Project Period (FY)
      1986 – 1987
    • Research Category
      Grant-in-Aid for Special Project Research
    • Research Institution
      Nagoya Institute of Technology
  •  Hybrid growth of Inp on Si and its application to optical devices

    • Principal Investigator
      UMENO Masayoshi
    • Project Period (FY)
      1985 – 1987
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Nagoya Institute of Technology

All 2008 2007

All Journal Article Presentation

  • [Journal Article] Analog VLSI Layout Design and the Circuit Board Manufacturing of Advanced Image Processing for Artificial Vision Model2008

    • Author(s)
      Masashi Kawaguchi, Takashi Jimbo, Naohiro Ishii
    • Journal Title

      KES 2008, Part II, Lecture Notes in Artificial Intelligence, LNAI 5178 5178-2

      Pages: 895-902

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560325
  • [Journal Article] The Characteristics Evaluation of Stacked-Type Electrostatic Actuators by the Neural Network2007

    • Author(s)
      Masashi Kawaguchi, Takashi Jimbo, Naohiro Ishii
    • Journal Title

      KES 2007/ WIRN 2007, Part II, Lecture Notes in Artificial Intelligence, LNAI 4693 4693-2

      Pages: 1059-1065

    • NAID

      40016666154

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560325
  • [Presentation] 生体の視覚系による動き検出アナログ電子回路モデルとその集積化2008

    • Author(s)
      川口雅司, 神保孝志, 石井直宏
    • Organizer
      JASAG2008年秋季全国大会
    • Place of Presentation
      千葉工業大学
    • Year and Date
      2008-10-26
    • Data Source
      KAKENHI-PROJECT-17560325
  • 1.  EGAWA Takashi (00232934)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 0 results
  • 2.  UMENO Masayoshi (90023077)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 0 results
  • 3.  SOGA Tetsuo (20197007)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 0 results
  • 4.  ISHIKAWA Hiroyasu (20303696)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 5.  SHAO Chunlin (20242828)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 6.  林 靖彦 (50314084)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 7.  IDO Toshiyuki (60023256)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  WAKITA Kouichi (20301640)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  SAKAI Shiro (20135411)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  川口 雅司 (70249803)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 11.  北村 登 (50149936)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  MATSUMOTO Koh
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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