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MIYAZAKI Takayuki  宮崎 卓幸

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… Alternative Names

宮崎 卓幸  ミヤザキ タカユキ

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Researcher Number 80110401
Other IDs
Affiliation (based on the past Project Information) *help 1999 – 2003: 群馬大学, 工学部, 助教授
1996: 群馬大学, 工学部, 助教授
1992 – 1993: 群馬大学, 工学部, 助手
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Except Principal Investigator
Electronic materials/Electric materials
Keywords
Principal Investigator
InN / GaN / optical energy gap / optical properties / dielectric function / reactive sputtering / バンドギャップ / 光学的性質 / 誘電率 / 光学的特性 … More / 分光エリプソメータ / 反応性スパッタリング / 窒化物半導体 / PL spectra / nitride semiconductors / 誘電率スペクトル / PL発光 / spectroscopic ellipsometry / amorphous semiconductor / nitride semiconductor / III-V semiconductor / 偏光分光解析 / 光学的バンドギャップ / 誘電率関数 / 非晶質半導体 / III-V族半導体 / 有効媒質近似 / イオンダメージ / モデル誘電率関数 / 温度変調反射率 / 波長可変エリプソメータ / InSb / ヘテロエピタキシー / 高周波スパッタ法 … More
Except Principal Investigator
Si / CdS / フォトレフレクタンス / 波長可変エリプソメータ / 誘電率 / II-VI族化合物半導体 / II-VI compound semiconductor / Amorphous / Complex refractive index / Complex dielectric function / Photoreflectance / Spectroscopic ellipsometry / CdTe / 真空蒸着 / エレクトロレフレクタンス / III-V族化合物半導体 / アモルファス / 複素屈折率 / 複素誘電率 / 分光エリプソメトリー / エピタキシャル薄膜 / ブリッジマン法 / Si単結晶 / Ga_2Se_3 / 非晶質 / 変調分光法 / 励起子 / 屈折率 / 光学的性質 / 半導体超格子 / 偏光分光解析 Less
  • Research Projects

    (6 results)
  • Co-Researchers

    (2 People)
  •  Properties of group-III nitride semiconductor thin films deposited by RF sputtering.Principal Investigator

    • Principal Investigator
      MIYAZAKI Takayuki
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Gunma university
  •  Growth, structural and optical properties of new concept tetrahedral crystals

    • Principal Investigator
      ADACHI Sadao
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Gunma University
  •  Properties of nitrogen incorporated III-V semiconductors by reactive sputtering.Principal Investigator

    • Principal Investigator
      MIYAZAKI Takayuki
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Gunma university
  •  ダブル(8-N)結晶の結晶成長と構造的、光学的性質

    • Principal Investigator
      安達 定雄
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Gunma University
  •  RFスパッタリング法によるInSbヘテロエピタキシーと成長膜の光学的評価Principal Investigator

    • Principal Investigator
      宮崎 卓幸
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Gunma University
  •  偏光分光解析によるII-VI族化合物半導体超確子の光学的性質に関する研究

    • Principal Investigator
      ADACHI Sadao
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Gunma University
  • 1.  ADACHI Sadao (10202631)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 0 results
  • 2.  OZAKI Shunji (80302454)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results

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