HASHIZUME Tamotsu 橋詰保

Researcher Number	80149898
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2019 – 2022: 北海道大学, 量子集積エレクトロニクス研究センター, 特任教授 2015 – 2019: 北海道大学, 量子集積エレクトロニクス研究センター, 教授 2014: 北海道大学, 学内共同利用施設等, 教授 2004 – 2013: Hokkaido Univ., Res.Center for Integrated Quantum Electronics, Prof., 量子集積エレクトロニクス研究センター, 教授 2001 – 2004: Hokkaido Univ., Res. Center for Integrated Quantum Electronics, Ass. Pro., 量子集積エレクトロニクス研究センター, 助教授 … More 2002: 北海道大学, 量子エレクトロニクス研究センター, 助教授 2002: 北海道大学, 量子集積エレクトニクス研究センター, 助教授 1998 – 2000: Research Center For Interface Quantum Electronics, Hokkaido Univ., Ass.Pro., 量子界面エレクトロニクス研究センター, 助教授 1997 – 1999: 北海道大学, 大学院・工学研究科, 助教授 1997: 北海道大学, 大学院工学研究科, 助教授 1997: Hokkaido Univ., Graduate School of Electron.and Infor.Eng., Ass.Pro., 工学研究科, 助教授 1995 – 1996: 北海道大学, 工学部, 助教授 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Science and Engineering / Science and Engineering / Electronic materials/Electric materials / 極微細構造工学 / Thin film/Surface and interfacial physical properties Except Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Science and Engineering / 表面界面物性
Keywords	Principal Investigator GaN / フェルミ準位ピンニング / ショットキー接合 / 電気化学プロセス / 界面制御 / HEMT / AlGaN / surface control / 表面制御 / interface control … More / 窒化ガリウム / DLTS / 表面処理 / インジウムリン / Al_2O_3 / Gallium Nitride / Schottky barrier / ショットキー障壁 / 深い準位 / 自然酸化膜 / HFET / Fermi level pinning / MIS構造 / surface treatment / Schottky contact / electrochemical process / indium phosphide / 界面準位 / C-V / 電子準位 / AlInN / 電気化学酸化 / 表面準位 / パルス法 / 半導体界面 / 溶液 / 電子捕獲準位 / 周期的ナノチャネル / CV解析 / 電気化学エッチング / MOS / 異種接合 / Schottky interface / carbon diffusion / deep level / AIGaN / 漏れ電流 / 酸素不純物 / 窒素空孔欠陥 / プラズマ処理 / 炭素拡散 / heterointerface / 窒化カリウム / ヘテロ構造 / SiN_χ / MIS structure / ECRプラズマ / MIS接合 / 窒化シリコン膜 / フェルミ準位ビンニング / アルミナ膜 / 窒化シリコン酸 / natural oxide / Fermi level pinnning / ohmic contact / フェルミン準位ピンニング / オーミック接合 / ultrathin Si control layer / シリコン超薄膜制御層 / Schottky gate / single electron transistor / quantum wire transistor / split gate / in-plane gate / 2DEG / quantum structure / ショットキーゲット / ショットキーゲート / 単電子トランジスタ / 量子細線トランジスタ / スプリットゲート / インプレーンゲート / 2次元電子ガス / 量子構造 / optical communication system / micro-wave devices / optoelectronic ICs / FET / 光通信システム / マイクロ波デバイス / 光電子集積回路 / 電界効果トランジスタ / 電流コラプス / 多重台形チャネル / 窒素空孔 / ドライエッチング / ICP / ALD / へテロ接合 / MMC / トランジスタ / 絶縁膜 / 表面・界面 / バンド不連続量 / 表面フェルミ準位 / フェルミ準位安定化エネルギー / 有機金属気相成長 / 表面酸化 / 表面伝導 / ナノショットキー / 化合物半導体 … More Except Principal Investigator 窒化物半導体 / 電気化学プロセス / フェルミ準位ピンニング / 選択成長 / ショットキー極限 / Fermi level pinning / 半導体物性 / 多孔質構造 / ウェットエッチング / 電気化学反応 / 電子デバイス / 窒化ガリウム / ショットキーゲート / 集積回路 / TiN / InP MISFET / Schottky limit / electrochemical process / パルス法 / インジウムリン / 半導体界面 / 金属 / ECRプラズマ / 再成長 / 量子ドット / 表面・界面準位 / 化合物半導体 / ナノ材料 / 電子・電気材料 / エネルギー変換 / 光電気化学 / 論理回路 / フォトニック結晶 / 有機金属気相成長 / 窒化物半導 / 絶縁膜体積技術 / 素子分離技術 / 絶縁膜堆積技術 / 電極形成 / モノリシック集積回路 / 窒化物半導体デバイス / 絶縁膜形成技術 / プロセス技術 / 集積回路技術 / 過酷環境エレクトロニクス / 窒素極性 / HEMT / トランジスタ / 低損傷エッチング / 先端機能デバイス / 格子欠陥 / 特異構造 / 結晶工学 / 新エネルギー / 光物性 / 半導体超微細化 / Quantum Transport / Power-Delay Product / Quantum Wire Network / Schottky Gate / Quantum Dots / Hexagonal BDD Quantum Circuit / Binary Decision Diagram (BDD) / Single Electron Circuit / ヘキサゴナルBDD量子回路 / 量子輸送 / 電力・遅延積 / 量子細線ネットワーク / ナノショットキーゲート / ヘキサゴナルBDD回路 / 二分決定グラフ(BDD) / 単電子回路 / selective MBE growth / Schottky gate / integrated circuit / memory / logic circuit / quantum limit / III-V compound semiconductor / quantum wire transistor / MBE選択成長 / 記憶回路 / 量子限界 / III-V族化合物半導体 / 量子細線トランジスタ / Photonic Bandgap / Photonic Crystal / Masked Substrate / Selective Area Growth / MOVPE Growth / TM偏光・TE偏光 / 3角格子 / 2次元フォトニック結晶スラブ / マスクパターン / フォトニックバンドギャップ / quantum device / conductive prove AFM / nano-metal dot array / compound semiconductor / nano-Schottky contact / 単電子インバータ / 単電子メモリ回路 / 金属仕事関数依存性 / ショットキー障壁高制御 / 金属ドット / ナノスケールショットキー接合 / 量子デバイス / 導電性プローブAFM / ナノ金属ドットアレイ / ナノショットキー接合 / integrated circuit material / thin film low temperature deposition / diffusion barrier material / low frequency plasnra CVD / low frequency plasma / thin film deposition / plasma CVD / 薄膜低温形成 / 集積回路材 / 薄膜低温生成 / 拡散バリア材 / 低周波プラズマCVD / 低周波プラズマ / 薄膜生成 / プラズマCVD / ultra high-frequency and high speed devices / unified DIGS model / ECR plasma process / insulated-gate structure / InP-based materials / ultrathin Si quantum well / 超高周波大電力デバイス / 統一DIGSモデル / 絶縁ゲート / InP系化合物半導体 / 超薄膜シリコン量子井戸 / Schottky barrier height / nano metal particle / Fermi-level pinning / metal-semiconductor interface / ショットキー障壁高 / 金属微粒子 / oxynitride film / ECR plasma / ultrathin insulator / hydrogen-terminated surface / interface state / surface state / UHV-based system / contactless C-V / 原子スケール表面制御 / トンネル絶縁膜 / 極薄絶縁膜 / 半導体自由表面 / 非接触C-V / 酸窒化膜 / 極博絶縁膜 / 水素終端シリコン表面 / 表面プロセス / 超高真空一貫システム / 非接触・C-V / Quantum wire laser / Nano Sturcture / Nano Fabication / Selective growth / Self-organized growth / Coupled Quantum Dots / Quantum Dot / Single electron devices / 表面修飾 / ドット形成過程 / 表面エネルギー / 表面吸着 / 成長モード / 量子細線レーザー / 微細加工 / ナノ構造 / 自己形成 / 結合量子ドット / 単電子デバイス / photoluminescence / silicon interface control layr / surface passivation / surface and interface states / interface control / compound semiconductors / quantum wire / quantum well / フォトルミネセンス / シリコン界面制御層 / 表面不活性化 / 界面制御 / 量子井戸 / 量子細線 / 表面・界面物性 / 高電子移動度トランジスタ / 低損傷プロセス / 化学センサ / 太陽電池 / 光吸収率 / 半導体ナノ構造 / 有機金属気相成長法 / 電界効果トランジスタ / 量子集積ハードウェア / 半導体ナノワイヤ / 近藤効果 / 単電子メモリー / 相補型単電子インバータ / カゴメ格子 / 2分岐決定ダイアグラム / 単電子トランジスタ / 量子ナノ構造 Less

Investigation of process technology for nitride semiconductor based integrated circuits for harsh environment electronics
- Principal Investigator
  
  OKADA Hiroshi
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Toyohashi University of Technology
Development of wet etching technology for nitride semiconductors using strong oxidizing agents and application to transistors
- Principal Investigator
  
  Sato Taketomo
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hokkaido University
Study on N-polar GaN MIS-HEMTs for power devices
- Principal Investigator
  
  Suemitsu Tetsuya
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tohoku University
Low-damage Processing of Nitride Semiconductors Based on Self-stoping Oxdization and Transistor Applications
- Principal Investigator
  
  Sato Taketomo
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Steering Group
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Interface control of heterojunctions including singularity structures for advanced electron devicesPrincipal Investigator
- Principal Investigator
  
  Hashizume Tamotsu
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Visible light responsive photocatalysts utilizing nitride semiconductor-based nanostructures for artificial photosynthesis
- Principal Investigator
  
  Taketomo Sato
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensors
- Principal Investigator
  
  SATO Taketomo
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
窒化物半導体混晶のバルク準位評価とナノ構造表面制御Principal Investigator
- Principal Investigator
  
  橋詰保
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Reliability improvement of GaN transistors based on the control of electronic states and a nobel gate structurePrincipal Investigator
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Hokkaido University
化合物半導体配列ナノ構造を基盤とする超接合光吸収体の創成と太陽電池応用
- Principal Investigator
  
  佐藤威友
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
III族窒化物半導体混晶の欠陥準位・表面準位の評価と制御Principal Investigator
- Principal Investigator
  
  橋詰保
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Development of Quantum Integrated Hardwares based on Semiconductor Nanowires
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Reliability improvement of GaN-based devices by controlling defects and interfacesPrincipal Investigator
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Surface/interface control of high-frequency and high-power transistors based on GaN materialsPrincipal Investigator
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
有機金属気相成長高密度量子ナノ構造による単電子集積エレクトロニクス
- Principal Investigator
  
  福井孝志
- Project Period (FY)
  2001 – 2005
- Research Category
  
  Grant-in-Aid for Creative Scientific Research
- Research Institution
  Hokkaido University
Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky Gates
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Formation of Photonic Crystals by Selective Area Growth and Their Applications
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Research and development of III-V quantum wire transistor-based logic and memory circuits operating near the quantum limit
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構Principal Investigator
- Principal Investigator
  
  橋詰保
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Hokkaido University
Control of Metal-Compound Semiconductor Interfaces by Formation of Nano-Scale Schottky Contacts and Its Application
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Metal contact formation to GaN based on the interface control technologiesPrincipal Investigator
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
"Insulated gate structures on GaN and their interface properties"Principal Investigator
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構Principal Investigator
- Principal Investigator
  
  橋詰保
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Hokkaido University
Novel Insulated Gate Structure having Ultrathin Si Quantum Well for Realization of InP-Based Ultra High-Frequency and High-Power Devices
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Low Temperature Deposition of TiN Diffusion Barrier Metal for Integrated Circuit by Low Frequency Plasma CVD
- Principal Investigator
  
  SHIMOZUMA Mitsuo
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構Principal Investigator
- Principal Investigator
  
  橋詰保
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hokkaido University
"Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
"Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"Principal Investigator
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
"Development of Novel Technology for Integratio of Single Electron Devices"
- Principal Investigator
  
  KAWABE Mitsuo
- Project Period (FY)
  1996 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  TSUKUBA UNIVERSITY
Developement of Contactless and Non-Destructive Capacitance-Voltage Measurement System in Ultra-High Vacuum
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  HOKKAIDO UNIVERSITY
Fabrication of InP-based high-speed integrated circuits using MESFETs with high Schottky barrier heightPrincipal Investigator
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
"A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"Principal Investigator
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  極微細構造工学
- Research Institution
  HOKKAIDO UNIVERSITY

[Book] 高周波半導体材料・デバイスの新展開2006
- Author(s)
  橋詰保, 他26名
- Total Pages
  266
- Publisher
  シーエムシー出版
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation2021
- Author(s)
  Joel T. Asubar, Zenji Yatabe, Dagmar Gregusova, Tamotsu Hashizume
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 129 Issue: 12 Pages: 121102-121102
- DOI
  10.1063/5.0039564
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473, KAKENHI-PROJECT-19K04528, KAKENHI-PLANNED-16H06421
[Journal Article] Interface characterization of Al2O3/m-plane GaN structure2021
- Author(s)
  Kaneki Shota、Hashizume Tamotsu
- Journal Title
  
  AIP Advances
  
  Volume: 11 Issue: 1 Pages: 015301-015301
- DOI
  10.1063/5.0031232
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-18J20386
[Journal Article] Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process2020
- Author(s)
  S. Ozaki, K. Makiyama, T. Ohki, N. Okamoto, Y. Kumazaki, J. Kotani, S. Kaneki, K. Nishiguchi, N. Nakamura, N. Hara, and T. Hashizume
- Journal Title
  
  Semicond. Sci. Technol.
  
  Volume: 35 Issue: 3 Pages: 035027-035027
- DOI
  10.1088/1361-6641/ab708c
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-18J20386
[Journal Article] Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching2020
- Author(s)
  S. Yamada, M. Omori, H. Sakurai, Y. Osada, R. Kamimura, T. Hashizume, J. Suda, and T. Kachi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 13 Issue: 1 Pages: 016505-016505
- DOI
  10.7567/1882-0786/ab5ffe
- NAID
  210000157772
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor2020
- Author(s)
  Ochi Ryota、Maeda Erika、Nabatame Toshihide、Shiozaki Koji、Sato Taketomo、Hashizume Tamotsu
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 6 Pages: 065215-065215
- DOI
  10.1063/5.0012687
- NAID
  120006869887
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] A time-dependent Verilog-A compact model for MOS capacitors with interface traps2019
- Author(s)
  K. Fukuda, H. Asai, J. Hattori, M. Shimizu, and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SB Pages: SBBD06-SBBD06
- DOI
  10.7567/1347-4065/aaffbe
- NAID
  210000135419
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates2019
- Author(s)
  Y. Ando, S. Kaneki and T. Hashizume
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 12 Issue: 2 Pages: 024002-024002
- DOI
  10.7567/1882-0786/aafded
- NAID
  210000135597
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures2019
- Author(s)
  M. Tapajna, J. Drobny, F. Gucmann, K. Husekova, D. Gregussova, T. Hashizume, and J. Kuzmik
- Journal Title
  
  Mat. Sci. Semicond. Process.
  
  Volume: 91 Pages: 356-361
- DOI
  10.1016/j.mssp.2018.12.012
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region2019
- Author(s)
  D. Gregusova, L. Toth, O. Pohorelec, S. Hasenohrl, S. Hascik, I. Cora, Z. Fogarassy, R. Stoklas, A. Seifertova, M. Blaho, A. Laurencikova, T. Oyobiki, B. Pecz, T. Hashizume, and J. Kuzmik
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SC Pages: SCCD21-SCCD21
- DOI
  10.7567/1347-4065/ab06b8
- NAID
  210000156114
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors2019
- Author(s)
  S. Nakazawa, H.-A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, T. Kimoto, and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: 3 Pages: 030902-030902
- DOI
  10.7567/1347-4065/aafd17
- NAID
  210000135371
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] State of the art on gate insulation and surface passivation for GaN-based power HEMTs2018
- Author(s)
  T. Hashizume, K. Nishiguch, S. Kaneki, J. Kuzmik, Z. Yatabe
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 78 Pages: 85-95
- DOI
  10.1016/j.mssp.2017.09.028
- NAID
  120006456416
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034, KAKENHI-PLANNED-16H06421
[Journal Article] Effects of postmetallization annealing on interface properties of Al2O3/GaN structures2018
- Author(s)
  T. Hashizume, S. Kaneki, T. Oyobiki, Y. Ando, S. Sasaki and K. Nishiguchi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 11 Issue: 12 Pages: 124102-124102
- DOI
  10.7567/apex.11.124102
- NAID
  120006543298
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps2018
- Author(s)
  K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 4S Pages: 04FG04-04FG04
- DOI
  10.7567/jjap.57.04fg04
- NAID
  210000148929
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors2018
- Author(s)
  M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik and T. Hashizume
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 124 Issue: 22
- DOI
  10.1063/1.5056194
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction2017
- Author(s)
  R. Stoklas, D. Gregusova, M. Blaho, K. Frohlich, J. Novak, M. Matys, Z. Yatabe, P. Kordos, T. Hashizume
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 32 Issue: 4 Pages: 045018-045018
- DOI
  10.1088/1361-6641/aa5fcb
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034, KAKENHI-PLANNED-16H06421
[Journal Article] Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors2017
- Author(s)
  Matys M.、Kaneki S.、Nishiguchi K.、Adamowicz B.、Hashizume T.
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 122 Issue: 22 Pages: 224504-224504
- DOI
  10.1063/1.5000497
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] Effects of Air-annealing on DC Characteristics of InAlN/GaN MOS-HEMTs Using ALD-Al2O32017
- Author(s)
  S. Ozaki, K, Makiyama, T, Ohki, N, Okamoto, S, Kaneki, K, Nishiguchi, N, Hara and T, Hashizume
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 10 Issue: 6 Pages: 061001-061001
- DOI
  10.7567/apex.10.061001
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process2017
- Author(s)
  Kumazaki Yusuke、Uemura Keisuke、Sato Taketomo、Hashizume Tamotsu
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 121 Issue: 18 Pages: 184501-184501
- DOI
  10.1063/1.4983013
- NAID
  120006463556
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-17H03224, KAKENHI-PROJECT-15K13937
[Journal Article] Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS-HEMTs2017
- Author(s)
  K. Nishiguchi, S. Kaneki, S. Ozaki and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 10 Pages: 101001-101001
- DOI
  10.7567/jjap.56.101001
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-15J00919
[Journal Article] Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates2016
- Author(s)
  S. Kaneki, J. Ohira, S. Toiya, Z. Yatabe, J. T. Asubar and T. Hashizume
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 109 Issue: 16
- DOI
  10.1063/1.4965296
- NAID
  120006360059
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-15K18034
[Journal Article] Effects of Cl_2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al_2O_3/AlGaN/GaN Heterostructures2013
- Author(s)
  Z. Yatabe, Y. Hori, S. Kim, and T. Hashizume
- Journal Title
  
  Appl. Phys
  
  Volume: Express 6 Issue: 1 Pages: 16502-16502
- DOI
  10.7567/apex.6.016502
- NAID
  10031140462
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Determination of the deep donor-like interface state density distribution in metal/Al_2O_3/n-GaN structures from the photocapacitance-light intensity measurement2012
- Author(s)
  M. Matys, B. Adamowicz, and T. Hashizume
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 101 Issue: 23 Pages: 231608-231608
- DOI
  10.1063/1.4769815
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] GaN電子デバイスにおける絶縁膜界面制御（最近の展望）2012
- Author(s)
  橋詰　保
- Journal Title
  
  応用物理
  
  Volume: 81 Pages: 479-484
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Interface state characterization of ALD-Al_2O_3/GaN and ALD-Al_2O_3/AlGaN structures2012
- Author(s)
  Y.Hori, C, Mizue, T.Hashizume
- Journal Title
  
  Physica status solidi C
  
  Volume: 9 Issue: 6 Pages: 1356-1360
- DOI
  10.1002/pssc.201100656
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J02074, KAKENHI-PROJECT-21246007
[Journal Article] Interface properties of Al2O3/n-GaN structures with inductively coupled plasma etching of GaN surfaces2012
- Author(s)
  S. Kim, Y. Hori, W.-C. Ma, D. Kikuta, T. Narita, H. Iguchi, T. Uesugi, T. Kachi, and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 6R Pages: 60201-60201
- DOI
  10.1143/jjap.51.060201
- NAID
  210000140662
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Reduction of current collapse in the multi-mesa-channel AlGaN/GaN HEMT2012
- Author(s)
  Kota Ohi, Tamotsu Hashizume
- Journal Title
  
  physica status solidi (c)
  
  Volume: Volume 9 Issue: 3-4 Pages: 898-902
- DOI
  10.1002/pssc.201100301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J01711, KAKENHI-PROJECT-21246007
[Journal Article] Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress2012
- Author(s)
  C.-Y. Hu and T. Hashizume
- Journal Title
  
  J. Appl. Phys
  
  Volume: 111 Issue: 14 Pages: 84504-84504
- DOI
  10.1063/1.470439
- NAID
  120004146567
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Capacitance-voltage characteristics of Al_2O_3/AlGaN/GaN structures and state density distribution at Al_2O_3/AlGaN interface2011
- Author(s)
  C.Mizue, Y.Hori, M.Miczek, T.Hashizume
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Capacitance-voltage characteristics of Al_2O_3/AlGaN/GaN structures and state density distribution at Al_2O_3/AlGaN interface2011
- Author(s)
  C.Mizue, Y.Hori, M.Miczek, T.Hashizume
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: 60
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Formation of recessed-oxide gate for normally-off AlGaN/GaN HEMTs using a selective electrochemical oxidation2011
- Author(s)
  N.Harada, Y.Hori, N.Azumaishi, K.Ohi, T.Hashizume
- Journal Title
  
  Appl.Phys.Express
  
  Volume: 4
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection2011
- Author(s)
  P. Bidzinski, M. Miczek, B.Adamowicz, C. Mizue and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 4S Pages: 04DF08-04DF08
- DOI
  10.1143/jjap.50.04df08
- NAID
  210000070314
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Formation of recessed-oxide gate for normally-off AlGaN/GaN HEMTs using a selective electrochemical oxidation2011
- Author(s)
  N.Harada, Y.Hori, N.Azumaishi, K.Ohi, T.Hashizume
- Journal Title
  
  Appl.Phys.Express
  
  Volume: 4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Al_0.44Ga_0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures2011
- Author(s)
  M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa
- Journal Title
  
  Appl. Phys. Lerr.
  
  Volume: 98 Issue: 14 Pages: 142117-142117
- DOI
  10.1063/1.3578449
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Measurement of valence-band offsets of InAlN/ GaN heterostructures grown by metal-organic vapor phase epitaxy2011
- Author(s)
  M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 109 Issue: 1 Pages: 13703-13703
- DOI
  10.1063/1.3527058
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Impact of gate and passivation structures on current collapse of AlGaN/GaN HEMTs under off-state-bias stress2011
- Author(s)
  M. Tajima and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 6R Pages: 61001-61001
- DOI
  10.1143/jjap.50.061001
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Formation of recessed-oxide gate for normally-off AlGaN/GaN HEMTs using a selective electrochemical oxidation2011
- Author(s)
  N. Harada, Y. Hori, N. Azumaishi, K. Ohi and T. Hashizume
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 4 Issue: 2 Pages: 21002-21002
- DOI
  10.1143/apex.4.021002
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/ insulator/GaN structure2011
- Author(s)
  M. Miczek, P. Bidzinski, B.Adamowicz, C. Mizue and T. Hashizume
- Journal Title
  
  Solid State Commun
  
  Volume: 151 Issue: 11 Pages: 830-833
- DOI
  10.1016/j.ssc.2011.03.021
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Capacitance-voltage characteristics of Al_2O_3/AlGaN/GaN structures and state density distribution at Al_2O_3/AlGaN interface2011
- Author(s)
  C. Mizue, Y. Hori, M. Miczek, and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 2R Pages: 21001-21001
- DOI
  10.1143/jjap.50.021001
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Process conditions for improvement of electrical properties of Al_2O_3/n-GaN structures prepared by atomic layer deposition2010
- Author(s)
  Y. Hori, C. Mizue, and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 49 Issue: 8R Pages: 80201-80201
- DOI
  10.1143/jjap.49.080201
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition2010
- Author(s)
  D. Gregusova, R. Stoklas, C. Mizue, Y. Hori, J. Novak, T. Hashizume, and P. Kordos
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 107 Issue: 10 Pages: 106104-106104
- DOI
  10.1063/1.3428492
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Low Reflectance Surface Observed on InP Porous Structures after Photo electrochemical Etching2010
- Author(s)
  T.Sato, N.Yoshizawa, H. Okazaki, T.Hashizume
- Journal Title
  
  ECS Transactions
  
  Volume: 25 Pages: 83-88
- NAID
  120003783345
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656078
[Journal Article] Deep electronic levels of Al_xGa_<1-x>N with a wide range of Al composition grown by metal-organic vapor phase epitaxy2010
- Author(s)
  K.Ooyama, K.Sugawara, S.Okuzaki, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Deep electronic levels of AlxGa1-xN with a wide range of Al composition grown by metal-organic vapor phase epitaxy2010
- Author(s)
  K. Ooyama, K. Sugawara, S. Okuzaki, H. Taketomi, H. Miyake, K. Hiramatsu, and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 49 Issue: 10R Pages: 101001-101001
- DOI
  10.1143/jjap.49.101001
- NAID
  210000069281
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Akazawa, T.Matsuyama, T.Hashizume, M.Hiroki, S.Yamahata, N.Shigekawa
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 96
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells2010
- Author(s)
  T.Sato, N.Yoshizawa, T.Hashizume
- Journal Title
  
  Thin solid films (掲載決定)
- NAID
  120002208930
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656078
[Journal Article] Trapping effect evaluation of gateless AlGaN/ GaN heterojunction field-effect transistors using transmission-line-model method2010
- Author(s)
  C.-Y. Hu, T. Hashizume, K. Ohi, M. Tajima
- Journal Title
  
  Appl. Phys. Lett .
  
  Volume: 97 Issue: 22 Pages: 222103-222103
- DOI
  10.1063/1.3506583
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Process conditions for improvement of electrical properties of Al_2O_3/n-GaN structures prepared by atomic layer deposition2010
- Author(s)
  Y.Hori, C.Mizue, T.Hashizume
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells2010
- Author(s)
  T.Sato, N.Yoshizawa T.Hashizume
- Journal Title
  
  Thin Solid Films
  
  Volume: 518 Pages: 4399-4402
- NAID
  120002208930
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656078
[Journal Article] Variation of surface potentials of Si-doped Al_xGa_1-xN (0 < x < 0.87) grown on AlN/sapphire template by metal-organic vapor phase epitaxy2010
- Author(s)
  T. Kubo, H. Taketomi, H. Miyake, K. Hiramatsu, and T. Hashizume
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 3 Issue: 2 Pages: 21004-21004
- DOI
  10.1143/apex.3.021004
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al_2O_3 prepared by atomic layer deposition2010
- Author(s)
  D.Gregusova, R.Stoklas, C.Mizue, Y.Hori, J.Novak, T.Hashizume, P.Kordos
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 107
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Process conditions for improvement of electrical properties of Al_2O_3/n-GaN structures prepared by atomic layer deposition2010
- Author(s)
  Y.Hori, C.Mizue, T.Hashizume
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy2010
- Author(s)
  M. Akazawa, T. Matsuyama, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 96 Issue: 13 Pages: 132104-132104
- DOI
  10.1063/1.3368689
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Variation of surface potentials of Si-doped Al_xGa_<1-x>N(0<x<0.87)grown on AlN/sapphire template by metal-organic vapor phase epitaxy2010
- Author(s)
  T.Kubo, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
- Journal Title
  
  Appl.Phys.Express 3(論文番号021004-1-3)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Small valence-band offset of In0.17A10.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Akazawa, T.Matsuyama, T.Hashizume, M.Hiroki, S.Yamahata, N.Shigekawa
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 96
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al_2O_3 prepared by atomic layer deposition2010
- Author(s)
  D.Gregusova, R.Stoklas, C.Mizue, Y.Hori, J.Novak, T.Hashizume, P.Kordos
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Deep electronic levels of Al_xGa_<1-x>N with a wide range of Al composition grown by metal-organic vapor phase epitaxy2010
- Author(s)
  K.Ooyama, K.Sugawara, S.Okuzaki, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Variation of surface potentials of Si-doped Al_xGa_<1-x>N(0<x<0.87)grown on AlN/sapphire template by metal-organic vapor phase epitaxy2010
- Author(s)
  T.Kubo, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
- Journal Title
  
  Appl.Phys.Express 3
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Near-midgap deep levels in Al_<0.26>Ga_<0.74>N grown by metal-organic chemical vapord eposition2009
- Author(s)
  K.Sugawara, J.Kotani, T.Hashizume
- Journal Title
  
  Appl.Phys.Lett. 94
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Simulations of C-V-T Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures2009
- Author(s)
  M.Miczek, B.Adamowicz, C.Mizue, T.Hashizume
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Near-midgap deep levels in Al_0.26Ga_0.74N grown by metal-organic chemical vapor deposition2009
- Author(s)
  K. Sugawara, J. Kotani and T. Hashizume
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 94 Issue: 15
- DOI
  10.1063/1.3119643
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] UV-induced variation of interface potential in the AlOx/n-GaN structure2009
- Author(s)
  C. Mizue, J. Kotani, M. Miczek, and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 48
- NAID
  40016464704
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor2009
- Author(s)
  K.Ohi, T.Hashizume
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- NAID
  40016704629
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Surface control of GaN alloys for photonic and electronic devices2009
- Author(s)
  T.Hashizume, N.Shiozaki, K.Ohi
- Journal Title
  
  Proc.of SPIE, Gallium Nitride Materials and Devices IV 7216(論文番号7216-0U-1-8)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Surface control of GaN alloys for photonic and electronic devices2009
- Author(s)
  T.Hashizume, N.Shiozaki, K.Ohi
- Journal Title
  
  Proc.of SPIE, Gallium Nitride Materials and Devices IV 7216
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Near-midgap deep levels in Al_<0.26>Ga_<0.74>N grown by metal-organic chemical vapord eposition2009
- Author(s)
  K.Sugawara, J.Kotani, T.Hashizume
- Journal Title
  
  Appl.Phys.Lett. 94(論文番号152106-1-3)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor2009
- Author(s)
  K.Ohi, T.Hashizume
- Journal Title
  
  Jpn.J.Appl.Phys. 48(論文番号081002-1-5)
- NAID
  40016704629
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Improvements of Electronic and Optical Characteristics of n-GaN-based structures by Photoelectrochemical Oxidation in Glycol Solution2009
- Author(s)
  N. Shiozaki and T. Hashizume
- Journal Title
  
  J. Appl. Phys. 105
- NAID
  120001152960
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Effect of carbon incorporation on electric properties of n-type GaN surfaces2009
- Author(s)
  T. Kimura and T. Hashizume
- Journal Title
  
  J. Appl. Phys. 105
- NAID
  120001102068
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Effects of native oxide formation on AlGaN on DC characteristics of AlGaN/GaN high-electron-mobility transistors2009
- Author(s)
  T. Tajima, J. Kotani and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Simulations of C-V-T Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures2009
- Author(s)
  M.Miczek, B.Adamowicz, C.Mizue, T.Hashizume
- Journal Title
  
  Jpn.J.Appl.Phys. 48(論文番号04C092-1-6)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] GaNおよびAlGaNの深い電子準位-電気的評価結果を中心として-(解説)2009
- Author(s)
  橋詰保
- Journal Title
  
  日本結晶成長学会誌 36(論文番号205-213)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor2009
- Author(s)
  K. Ohi and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 48 Issue: 8 Pages: 081002-081002
- DOI
  10.1143/jjap.48.081002
- NAID
  40016704629
- Data Source
  KAKENHI-PROJECT-21246007
[Journal Article] Surface control of GaN alloys for photonic and electronic devices2009
- Author(s)
  T. Hashizume, N. Shiozaki and K. Ohi
- Journal Title
  
  Proc. of SPIE, Gallium Nitride Materials and Devices IV 7216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] GaNおよびAlGaNの深い電子準位-電気的評価結果を中心として-(解説)2009
- Author(s)
  橋詰保
- Journal Title
  
  日本結晶成長学会誌 36
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016001
[Journal Article] Deposition of aluminum oxide layer on GaN using diethyl-aluminum-ethoxide as a precursor2008
- Author(s)
  T. Uesugi, T. Kachi, M. Sugimoto, C. Mizue, and T. Hashizume
- Journal Title
  
  J. Appl. Phys. 104
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Temperature-dependent interface-state response in an Al_2O_3/n-GaN structure2008
- Author(s)
  K. Ooyama, H. Kato, M. Miczek, and T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 5426-5428
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors2008
- Author(s)
  M. Miczek, C. Mizue, T. Hashizume, B. Adamowicz
- Journal Title
  
  J. Appl. Phys. 103(In press)
- NAID
  120000952722
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Effects of interface states and temperature on the C-V behavior of metal/insulator/A1GaN/GaN heterostructure capacitors2008
- Author(s)
  M. Miczek, C. Mizue, T. Hashizume, and B. Adamowicz
- Journal Title
  
  J. Appl. Phys. 103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Chemical and Potential-Bending Characteristics of SiN_x/AlGaN Interfaces Preparedby In Situ Metal-Organic Chemical Vapor Deposition2007
- Author(s)
  E. Ogawa, T. Hashizume, T. Ueda and T. Tanaka
- Journal Title
  
  Jpn. J. Appl. Phys. 46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water2007
- Author(s)
  Nanako Shiozaki, Taketomo Sato, Tamotsu Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys 46(in press)
- NAID
  10018900586
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Solid-Phase Diffusion of Carbon into GaN Using SiNχ/CNχ/GaN Structure2007
- Author(s)
  T.Kimura, S.Ootomo, T.Nomura, S.Yoshida, T.Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 46
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Electrical and deep-level characterization of GaP_<1-x>N_x grown by gas-source molecular beam epitaxy2007
- Author(s)
  M.Kaneko, T.Hashizume, V.A.Odnoblyudov, C.W.Tu
- Journal Title
  
  J. Appl. Phys 101(in press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water2007
- Author(s)
  N.Shiozaki, T.Sato, T.Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 1471-1473
- NAID
  10018900586
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Electrical and deep-level characterization of GaP1-χNχ grown by gas-source molecular beam epitaxy2007
- Author(s)
  M.Kaneko, T.Hashizume, V.A.Odnoblyudov, C.W.Tu
- Journal Title
  
  J. Appl. Phys. 101(in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water2007
- Author(s)
  Nanako Shiozaki, Taketomo Sato, Tamotsu Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 1471-1473
- NAID
  10018900586
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures2007
- Author(s)
  J. Kotani, M. Tajima, S. Kasai and T. Hashizume
- Journal Title
  
  Appl. Phys. Lett. 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution With Glycol and Water2007
- Author(s)
  N. Shiozaki, T. Sato, T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 1471-1473
- NAID
  10018900586
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Electrical and deep-level characterization of GaP_<1-x>N_x grown by gas-source molecular beam epitaxy2007
- Author(s)
  M. Kaneko, T. Hashizume, V. A. Odnoblyudov and C. W. Tu
- Journal Title
  
  J. Appl. Phys. 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Solid-Phase Diffusion of Carbon into GaN Using SiN_x/CN_x/GaN Structure2007
- Author(s)
  T.Kimura, S.Ootomo, T.Nomura, S.Yoshida, T.Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 46
- NAID
  10018903165
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism2006
- Author(s)
  J.Kotani, M.Kaneko, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol B 24
  
  Pages: 2148-2155
- NAID
  120000960611
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism2006
- Author(s)
  T.Sato, T.Oikawa, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol B 24
  
  Pages: 2087-2092
- NAID
  120000959106
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Large reduction of leakage currents in AIGaN Schottky diodes by a surfce control process and its mechanism2006
- Author(s)
  J.Kotani, M.Kaneko, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol B 24
  
  Pages: 2148-2155
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure2006
- Author(s)
  T.Kokawa, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol. B 24
  
  Pages: 1972-1976
- NAID
  120000956602
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Control of leakage current in AlGaN Schottky interfaces by an ultrathin Al layer2006
- Author(s)
  M.Kaneko, T.Hashizume
- Journal Title
  
  phys. stat. sol. (c) 3
  
  Pages: 1758-1761
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Surface control process of AlGaN for suppression of gate leakage currents in AlGaN/GaN heterostructure field effect transistors2006
- Author(s)
  T.Hashizume, J.Kotani, A.Basile, M.Kaneko
- Journal Title
  
  Jpn. J. Appl. Phys 45
- NAID
  10018158791
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Control of leakage current in AlGaN Schottky interfaces by an ultrathin Al layer2006
- Author(s)
  M.Kaneko, T.Hashizume
- Journal Title
  
  phys. stat. sol. (c), 3
  
  Pages: 1758-1761
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale Schottky gates2006
- Author(s)
  S.Kasai, J.Kotani, T.Hashizume, H.Hasegawa
- Journal Title
  
  J. Electron. Mat. 35
  
  Pages: 568-575
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Surface control process of AlGaN for suppression of gate leakage currents in AlGaN/GaN heterostructure field effect transistor2006
- Author(s)
  T.Hashizume^*, J.Kotani, A.Basile, M.Kaneko
- Journal Title
  
  Jpn.J.Appl.Phys 45
- NAID
  10018158791
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Selective molecular beam epitaxy growth of size-and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism2006
- Author(s)
  T.Sato, T.Oikawa, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol. B 24
  
  Pages: 2087-2092
- NAID
  120000959106
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Liquid Phase Sensors Using Open-Gate AlGaN/GaN HEMT Structure2006
- Author(s)
  T.Kokawa, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  J.Vac.Sci.Technol B 26(in press)
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure2006
- Author(s)
  T.Kokawa, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol B 24
  
  Pages: 1972-1976
- NAID
  120000956602
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Surface control process of AlGaN for suppression of gate leakage currents in AlGaN/GaN heterostructure field effect transistors2006
- Author(s)
  T.Hashizume, J.Kotani, A.Basile, M.Kaneko
- Journal Title
  
  Jpn. J. Appl. Phys. Letters 45
- NAID
  10018158791
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Control of leakage current in AlGaN Schottky interfaces by an ultrathin Allayer2006
- Author(s)
  M.Kaneko, T.Hashizume
- Journal Title
  
  phys. stat. sol. (c) 3
  
  Pages: 1758-1761
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Large reduction of leakage currents in A1GaN Schottky diodes by a surface control process and its mechanism2006
- Author(s)
  J.Kotani, M.Kaneko, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol. B 24
  
  Pages: 2148-2155
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on A1GaN/GaN heterostructure transistors2005
- Author(s)
  J.Kotani, S.Kasai, T.Hashizume, H.Hasegawa
- Journal Title
  
  J. Vac. Sci. Technol B 23
  
  Pages: 1799-1807
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Hydrogen Response of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure2005
- Author(s)
  K.Matsuo, T.Kimura, H.Hasegawa, T.Hashizume
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology 3
  
  Pages: 314-318
- NAID
  130004438957
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistor2005
- Author(s)
  J.Kotani, S.Kasai, T.Hashizume, H.Hasegawa
- Journal Title
  
  J.Vac.Sci.Technol B 23
  
  Pages: 1799-1807
- NAID
  120000958033
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Pt Schottky Diode Gas Sensors Formed on GaN and AlGaN/GaN Heterostructure2005
- Author(s)
  K.Matsuo, N.Negoro, J.Kotani, Hashizume, H.Hasegawa
- Journal Title
  
  Appl. Sur. Sci. 244
  
  Pages: 273-276
- NAID
  120000955910
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Minority carrier diffusion length in GaN : Dislocation density and doping concentration dependence2005
- Author(s)
  K.Kumakura, T.Makimoto, N.Kobayashi, T.Hashizume
- Journal Title
  
  Appl.Phys.Lett 86
- NAID
  120000957117
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Minority carrier diffusion length in GaN : Dislocation density and doping concentration dependence2005
- Author(s)
  K.Kumakura, T.Makimoto, N.Kobayashi, T.Hashizume, T.Fukui
- Journal Title
  
  Appl. Phys. Lett 86
- NAID
  120000957117
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN(0001) Substrates2005
- Author(s)
  T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Appl. Sur. Sci. 244
  
  Pages: 84-87
- NAID
  120000953792
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] GaN系ショットキー接合のリーク電流(解説論文)2005
- Author(s)
  橋詰保
- Journal Title
  
  電子情報通信学会論文誌(c) J88-C
  
  Pages: 621-629
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Minority carrier diffusion length in GaN : Dislocation density and doping concentration dependence2005
- Author(s)
  K.Kumakura, T.Makimoto, N.Kobayashi, T.Hashizume
- Journal Title
  
  Appl.Phys.Lett vol.86
- NAID
  120000957117
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN(000l) Substrates2005
- Author(s)
  T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Appl. Sur. Sci. 244
  
  Pages: 84-87
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Minority carrier diffusion length in GaN : Dislocation density and doping concentration dependence2005
- Author(s)
  K.Kumakura, T.Makimoto, N.Kobayashi, T.Hashizume, T.Fukui
- Journal Title
  
  Appl. Phys. Lett 86 Art No. 052105
- NAID
  120000957117
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Leakage currents in GaN-based Schottky interfaces2005
- Author(s)
  T.Hashizume
- Journal Title
  
  Journal of IEICE (C) J88-C
  
  Pages: 621-629
- NAID
  10016797506
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Pt Schottky Diode Gas Sensors Formed on GaN and AlGaN/GaN heterostructure2005
- Author(s)
  K.Matsuo, N.Negoro, J.Kotani, T.Hashizume, H.Hasegawa
- Journal Title
  
  Appl.Sur.Sci. 244
  
  Pages: 273-276
- NAID
  120000955910
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors2005
- Author(s)
  J.Kotani, S.Kasai, T.Hashizume, H.Hasegawa
- Journal Title
  
  J. Vac. Sci. Technol B 23
  
  Pages: 1799-1807
- NAID
  120000958033
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Pt Schottky Diode Gas Sensors Formed on GaN and AlGaN/GaN Heterostructure2005
- Author(s)
  K.Matsuo, N.Negoro, J.Kotani, T.Hashizume, H.Hasegawa
- Journal Title
  
  Appl. Sur. Sci. 244
  
  Pages: 273-276
- NAID
  120000955910
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation2005
- Author(s)
  J.Kotani, S.Kasai, H.Hasegawa, T.Hashizume
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology 3
  
  Pages: 433-438
- NAID
  130004438970
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Minority carrier diffusion length in GaN : Dislocation density and doping concentration dependence2005
- Author(s)
  K.Kumakura, T.Makimoto, N.Kobayashi, T.Hashizume
- Journal Title
  
  Appl.Phys.Lett. 86
- NAID
  120000957117
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Minority carrier diffusion length in GaN : Dislocation density and doping concentration dependence2005
- Author(s)
  K.Kumakura, T.Makimoto, N.Kobayashi, T.Hashizume, T.Fukui
- Journal Title
  
  Appl.Phys.Lett 86
- NAID
  120000957117
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN(0001) Substrates2005
- Author(s)
  T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Appl.Sur.Sci 244
  
  Pages: 84-87
- NAID
  120000953792
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Computer Simulation of Current Transport in GaN and AlGaN Schottky Diodes Based on Thin Surface Barrier Model2004
- Author(s)
  J.Kotani, H.Hasegawa, T.Hashizume
- Journal Title
  
  Appl.Sur.Sci. 237
  
  Pages: 213-218
- NAID
  120000954331
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes2004
- Author(s)
  T.Hashizume
- Journal Title
  
  Appl.Sur.Sci vol.234
  
  Pages: 387-394
- NAID
  120000959078
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Analysis and Control of Excess Leakage Currents in Nitride-Based Schottky Diodes Based on Thin Surface Barrier Model2004
- Author(s)
  J.Kotani, T.Hashizume, H.Hasegawa
- Journal Title
  
  J.Vac.Sci.Technol B 22
  
  Pages: 2179-2189
- NAID
  120000955423
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Effects of Surface Processing on 2DEG Current Transport at AlGaN/GaN Interface Studied by Gateless HFET Structure2004
- Author(s)
  T.Hashizume, S.Anantathanasarn, N.Negoro, E.Sato
- Journal Title
  
  Jpn.J.Appl.Phys.Part2 43(Express Letters)
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Al_2O_3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers2004
- Author(s)
  T.Hashizume, S.Anantathanasarn, N.Negoro, E.Sano
- Journal Title
  
  Jpn.J.Appl.Phys.Part 2 (Express Letters) vol.43
- NAID
  10013161287
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Leakage mechanism in GaN and AlGaN Schottky interfaces2004
- Author(s)
  T.Hashizume, J.Kotani, H.Hasegawa
- Journal Title
  
  Appl.Phys.Lett. 84
  
  Pages: 4884-4886
- NAID
  120000954612
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Analysis and Control of Excess Leakage Currents in Nitride-Based Schottky Diodes Based on Thin Surface Barrier Model2004
- Author(s)
  J.Kotani, T.Hashizume, H.Hasegawa
- Journal Title
  
  J.Vac.Sci.Technol B vol 22
  
  Pages: 2179-2189
- NAID
  120000955423
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Analysis and Control of Excess Leakage Currents in Nitride-Based Schottky Diodes Based on Thin Surface Barrier Model2004
- Author(s)
  J.Kotani, T.Hashizume, H.Hasegawa
- Journal Title
  
  J.Vac.Sci.Technol.B 22
  
  Pages: 2179-2189
- NAID
  120000955423
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes2004
- Author(s)
  T.Hashizume, H.Hasegawa
- Journal Title
  
  Appl.Sur.Sci 234
  
  Pages: 387-394
- NAID
  120000959078
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Computer Simulation of Current Transport in GaN and AlGaN Schottky Diodes Based on Thin Surface Barrier Model2004
- Author(s)
  J.Kotani, H.Hasegawa, T.Hashizume
- Journal Title
  
  Appl.Sur.Sci vol.237
  
  Pages: 213-218
- NAID
  120000954331
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Computer Simulation of Current Transport in GaN and AlGaN Schottky Diodes Based on Thin Surface Barrier Model2004
- Author(s)
  J.Kotani, H.Hasegawa, T.Hashizume
- Journal Title
  
  Appl.Sur.Sci 237
  
  Pages: 213-218
- NAID
  120000954331
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Leakage mechanism in GaN and AlGaN Schottky interfaces2004
- Author(s)
  T.Hashizume, J.Kotani, H.Hasegawa
- Journal Title
  
  Appl.Phys.Lett. vol.84
  
  Pages: 4884-4886
- NAID
  120000954612
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Effects of Surface Processing on 2DEG Current Transport at AlGaN/GaN Interface Studied by Gateless HFET Structure2004
- Author(s)
  T.Hashizume, S.Anantathanasarn, N.Negoro, E.Sano
- Journal Title
  
  Jpn.J.Appl.Phys.Part 2 (Express Letters) 43
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes2004
- Author(s)
  T.Hashizume
- Journal Title
  
  Appl.Sur.Sci. 234
  
  Pages: 387-394
- NAID
  120000959078
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Al_2O_3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs2003
- Author(s)
  T.Hashizume, S.Ootomo, H.Hasegawa
- Journal Title
  
  phys.stat.sol.(c)
  
  Pages: 2380-2384
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors2003
- Author(s)
  T.Hashizume, S.Ootomo, T.Inagaki, H.Hasegawa
- Journal Title
  
  J.Vac.Sci.Technol B 21
  
  Pages: 1828-1838
- NAID
  120000953350
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field effect transistors using ultrathin Al_2O_3 dielectric2003
- Author(s)
  T.Hashizume, S.Ootomo, H.Hasegawa
- Journal Title
  
  Applied Physics Letters vol.83
  
  Pages: 2952-2954
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Al_2O_3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs2003
- Author(s)
  T.Hashizume, S.Ootomo, H.Hasegawa
- Journal Title
  
  phys.stat.sol.(c) 0
  
  Pages: 2380-2384
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Mechanisms of Current Collapse and Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors2003
- Author(s)
  H.Hasegawa, T.Inagaki, S.Ootomo, T.Hashizume
- Journal Title
  
  J.Vac.Sci.Technol B vol.21
  
  Pages: 1844-1855
- NAID
  120000953747
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al_2O_3 Insulated Gate2003
- Author(s)
  S.Ootorno, H.Hasegawa, T.Hashizume
- Journal Title
  
  IEICE Trans.Electron. vol.E86-C
  
  Pages: 2043-2050
- NAID
  110003214505
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al_2O_3 Insulated Gate2003
- Author(s)
  S.Ootomo, H.Hasegawa, T.Hashizume
- Journal Title
  
  IEICE Trans.Electron. E86-C
  
  Pages: 2043-2050
- NAID
  110003214505
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors2003
- Author(s)
  T.Hashizume, S.Ootomo, T.Inagaki, H.Hasegawa
- Journal Title
  
  J.Vac.Sci.Technol B vol.21
  
  Pages: 1828-1838
- NAID
  120000953350
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN Surface2003
- Author(s)
  T.Hashizume
- Journal Title
  
  J.Appl.Phys. vol.94
  
  Pages: 431-436
- NAID
  120000959743
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN Surface2003
- Author(s)
  T.Hashizume
- Journal Title
  
  J.Appl.Phys. 94
  
  Pages: 431-436
- NAID
  120000959743
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Effects of Surface Processing on 2DEG Current Transport at AlGaN/GaN Interface Studied by Gate less HFET Structure2003
- Author(s)
  T.Inagaki, S.Ootomo, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science vol.216
  
  Pages: 519-525
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Mechanisms of Current Collapse and Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors2003
- Author(s)
  H.Hasegawa, T.Inagaki, S.Ootomo, T.Hashizume
- Journal Title
  
  J.Vac.Sci.Technol B 21
  
  Pages: 1844-1855
- NAID
  120000953747
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field effect transistors using ultrathin Al_2O_3 dielectric2003
- Author(s)
  T.Hashizume, S.Ootomo, H.Hasegawa
- Journal Title
  
  Applied Physics Letters 83
  
  Pages: 2952-2954
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Mechanism of Current Leakage through Metal/n-GaN Interfaces2002
- Author(s)
  S.Oyama, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science vol.190
  
  Pages: 322-325
- NAID
  120000960729
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Discrete surface state related to nitrogen-vacancy defect on plasma treated GaN surface2002
- Author(s)
  T.Hashizume
- Journal Title
  
  Applied Physics Letters 80
  
  Pages: 4564-4566
- NAID
  120000956979
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Surface Fermi level position and gap state distribution of InGaP surface grown by metal-organic vapor phase epitaxy2002
- Author(s)
  T.Hashizume
- Journal Title
  
  Applied Physics Letters 81
  
  Pages: 2382-2384
- NAID
  120000953554
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Effects of nitrogen addition on methan-based ECR plasma etching of gallium nitride2002
- Author(s)
  Z.Jin, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science vol.190
  
  Pages: 361-365
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Journal Article] Discrete surface state related to nitrogen-vacancy defect on plasma treated GaN surface2002
- Author(s)
  T.Hashizume, R.Nakasaki
- Journal Title
  
  Applied Physics Letters vol 80
  
  Pages: 4564-4566
- NAID
  120000956979
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350155
[Patent] エッチング方法及びエッチング装置2017
- Inventor(s)
  佐藤威友、熊崎祐介、橋詰保
- Industrial Property Rights Holder
  佐藤威友、熊崎祐介、橋詰保
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-095458
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-17H03224
[Patent] エッチング方法及びエッチング装置2017
- Inventor(s)
  佐藤威友、熊崎祐介、橋詰保
- Industrial Property Rights Holder
  佐藤威友、熊崎祐介、橋詰保
- Industrial Property Rights Type
  特許
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] AlGaN/GaN MIS-HEMTsにおけるパラレル伝導評価2022
- Author(s)
  越智亮太，橋詰保，佐藤威友
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Effect of parallel conduction on the current linearity of AlGaN/GaN MIS-HEMTs2022
- Author(s)
  Ryota Ochi, Tamotsu Hashizume, Taketomo Sato
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics (TWHM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Precise control in threshold voltage of AlGaN/GaN HEMTs utilizing a photoelectrochemical (PEC) etching2021
- Author(s)
  T. Sato, M. Toguchi, K. Itoh, T. Hashizume
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Precise control in threshold voltage of AlGaN/GaN HEMTs utilizing a photoelectrochemical (PEC) etching2021
- Author(s)
  T. Sato, M. Toguchi, K. Itoh, T. Hashizume
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Interface properties of Al2O3-based MOS structures on m-plane GaN2021
- Author(s)
  T. Hashizume and S. Kaneki
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] HfSiOx-gate GaN MOS-HEMTs for RF power transistor2021
- Author(s)
  T. Hashizume, R. Ochi, E. Maeda, T. Nabatame, K. Shiozaki and T. Sato
- Organizer
  Society of Photographic Instrumentation Engineers (SPIE), Photonics West 2021, Gallium Nitride Materials and Devices XVI
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 無極性面に形成したGaN MOS界面の特性2021
- Author(s)
  橋詰保
- Organizer
  第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] HfSiOx-gate AlGaN/GaN MOS HEMTs with improved operation stability2021
- Author(s)
  R. Ochi, T. Nabatame, T. Hashizume, T. Sato
- Organizer
  2021 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] HfSiOxゲート AlGaN/GaN HEMTsのDC特性とMOS界面評価2021
- Author(s)
  越智亮太、前田瑛里香、生田目俊秀、塩崎宏司、橋詰保
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] HfSiOxゲート AlGaN/GaN MOS-HEMTのゲート制御性2020
- Author(s)
  越智亮太、前田瑛里香、生田目俊秀、塩崎宏司、橋詰保
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] GaN MOSFETの絶縁ゲート技術2019
- Author(s)
  橋詰保
- Organizer
  応用物理学会第24回電子デバイス界面テクノロジー研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Improved gate controllability of Al2O3-gate AlGaN/GaN HEMTs grown on GaN substrates2019
- Author(s)
  R. Ochi, Y. Ando, S. Kaneki and T. Hashizume
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics (TWHM-2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Insulated gate technologies for advanced GaN MOS transistors2019
- Author(s)
  T. Hashizume
- Organizer
  11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma-2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Improved Al2O3 gate technology for high-power and high-frequency GaN transistors2019
- Author(s)
  T. Hashizume
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Stable C-V characteristics of Al2O3/m-plane GaN structures at high temperatures2019
- Author(s)
  S. Kaneki and T. Hashizume
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] GaN自立基板上に作製したAl2O3/AlGaN/GaN HEMTの評価2019
- Author(s)
  金木奨太、安藤祐次、橋詰保
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Interface control of Al2O3-based MOS structures for advanced GaN transistors2019
- Author(s)
  T. Hashizume and T. Sato
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] MOS interface control for GaN power transistor2019
- Author(s)
  T. Hashizume
- Organizer
  Compound Semiconductor Week (CSW2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] p-GaNに形成したショットキーおよびMOS接合の評価2018
- Author(s)
  橋詰保
- Organizer
  応用物理学会第149回結晶工学分科会研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors2018
- Author(s)
  M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik, and T. Hashizume
- Organizer
  International Workshop on Nitride Semiconductors (IWN-2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] m面GaNに形成したAl2O3 MOS構造の評価2018
- Author(s)
  金木奨太、橋詰保
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Gate controllability in Al2O3-gate AlGaN/GaN HEMTs grown on GaN substrates2018
- Author(s)
  Y. Ando, S. Kaneki, and T. Hashizume
- Organizer
  International Workshop on Nitride Semiconductors (IWN-2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] GaN基板上に作製したAl2O3/AlGaN/GaN MOS HEMT のゲート制御性2018
- Author(s)
  安藤祐次、金木奨太、橋詰保
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Characterization of Al2O3 MOS structures fabricated on high-temperature annealed GaN surfaces2018
- Author(s)
  T. Oyobiki and T. Hashizume
- Organizer
  International Workshop on Nitride Semiconductors (IWN-2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] GaN系トランジスタにおける界面制御2018
- Author(s)
  橋詰保
- Organizer
  応用物理学会先進パワー半導体分科会第４回個別討論会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 高温アニールがAl2O3/GaN 界面特性に及ぼす影響2018
- Author(s)
  及木達矢、橋詰保
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 高温アニール後のGaN表面に形成したAl2O3 MOS構造の評価2018
- Author(s)
  及木達矢、橋詰保
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Nature of oxide/III-N defects: Disorder induced gap state continuum vs. border traps2018
- Author(s)
  M. Matys, K. Nishiguchi, B. Adamowicz and T. Hashizume
- Organizer
  34th International Conference on the Semiconductor Physics (ICPS-2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Control of Al2O3 MOS Interfaces Fabricated on m-plane GaN Surfaces2018
- Author(s)
  S. Kaneki and T. Hashizume
- Organizer
  International Workshop on Nitride Semiconductors (IWN-2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Al2O3-gate AlGaN/GaN MOS HEMTの動作安定性2018
- Author(s)
  安藤祐次、金木奨太、西口賢弥、橋詰保
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] GaN MOS-HEMTの制御性および安定性の向上2017
- Author(s)
  金木将太、西口賢弥、橋詰保
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 光電気化学(PEC)反応を利用したリセスゲートAlGaN/GaN HEMTの作製2017
- Author(s)
  植村圭佑、佐藤威友、橋詰保
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Analysis of temperature dependent frequency dispersion in C-V curves of Al2O3/AlGaN/GaN structures based on the disorder-induced gap-state model2017
- Author(s)
  M. Matys, S.Kaneki, B. Adamowicz, J. Kuzmik and T. Hashizume
- Organizer
  12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 光電気化学(PEC)反応を利用したリセスゲートAlGaN/GaN HEMTの作製2017
- Author(s)
  植村圭佑、佐藤威友、橋詰保
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Transient-mode simulation of MOS C-V characteristics for GaN2017
- Author(s)
  Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu and Tamotsu Hashizume
- Organizer
  2017 International Conference on Solid-State Devices and Materials (SSDM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Improved MOS gate control in Al2O3/AlGaN/GaN HEMTs with reverse-bias annealing2017
- Author(s)
  Kenya Nishiguchi, Syota Kaneki, Tamotsu Hashizume
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Correlation between VTH instability and interface states in Al2O3/AlGaN/GaN Structures2017
- Author(s)
  Shota Kaneki, Zenji Yatabe, Tamotsu Hashizume
- Organizer
  12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Highly-controllable etching for AlGaN/GaN recessed-gate structures utilizing low-damage electrochemical reactions2017
- Author(s)
  K. Uemura, Y. Kumazaki, T. Sato, and T. Hashizume
- Organizer
  12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] GaNキャップ層がAlGaN/GaN MOS構造のC-V特性に与える影響2017
- Author(s)
  西口賢弥、橋詰保
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 光電気化学反応を利用したn-GaN表面層の低損傷エッチング2017
- Author(s)
  松本悟，佐藤威友，成田哲生，加地徹，橋詰保
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Precise thickness control in recess-etching for normally-off AlGaN/GaN HEMTs using a low damage photo-electrochemical reaction2017
- Author(s)
  Taketomo Sato, Keisuke Uemura, Yusuke Kumazaki, Tamotsu Hashizume
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Fast Switching Performance by 20 A/730 V AlGaN/GaN MIS-HFET Using AlON Gate Insulator2017
- Author(s)
  S. Nakazawa, H.-A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, M. Nozaki, T. Yamada, T. Hosoi, T. Shimura, H. Watanabe, and T. Hashizume
- Organizer
  63rd. International Electron devices Meeting (IEDM-2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Precise thickness control in recess-etching for normally-off AlGaN/GaN HEMTs using a low damage photo-electrochemical reaction2017
- Author(s)
  T. Sato, K. Uemura, Y. Kumazaki, and T. Hashizume
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS 12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] GaN系トランジスタにおける界面制御2017
- Author(s)
  橋詰保
- Organizer
  応用物理学会応用電子物性分科会研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Al2O3/GaN 構造の界面制御プロセス2017
- Author(s)
  金木奨太、西口賢弥、橋詰保
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Improved wet-etching processes for GaN-based electron devices2017
- Author(s)
  T. Sato, K. Uemura and T. Hashizume
- Organizer
  2017 Materials Research Society Fall Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 光電気化学反応を利用したn-GaN表面層の低損傷エッチング2017
- Author(s)
  松本悟、佐藤威友、成田哲生、加地徹、橋詰保
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] MOS構造によるGaN表面のICPエッチング誘起欠陥の評価2017
- Author(s)
  及木達矢、西口賢弥、山田真嗣、桜井秀樹、上村隆一郎、長田大和、加地徹、橋詰保
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Improved wet-etching processes for GaN-based electron devices2017
- Author(s)
  T. Sato, K. Uemura, and T. Hashizume
- Organizer
  2017 MRS Fall Meeting and Exhibit
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Improved wet-etching processes for GaN-based electron devices2017
- Author(s)
  T. Sato, K. Uemura, and T. Hashizume
- Organizer
  2017 MRS Fall Meeting and Exhibit
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] GaN系半導体のMOS界面制御2017
- Author(s)
  橋詰保
- Organizer
  日本学術振興会第162委員会第103回研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] GaN MIS界面とトランジスタ応用～これまでのⅢ-V MIS界面と違いはあるのか～2017
- Author(s)
  橋詰保
- Organizer
  日本結晶成長学会・ナノ構造・エピタキシャル成長分科会・第9回講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structures2016
- Author(s)
  Z. Yatabe, J.T. Asubar, Y. Nakamura, T. Hashizume
- Organizer
  2016 International Conference on Solid-State Devices and Materials (SSDM2016)
- Place of Presentation
  Tsukuba International Congress Center
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] GaN系トランジスタにおける界面制御2016
- Author(s)
  橋詰保
- Organizer
  第77回応用物理学会秋季学術講演会シンポジウム
- Place of Presentation
  新潟朱鷺メッセ
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Al2O3/AlGaN/GaN MOSHEMT の界面制御プロセス2016
- Author(s)
  金木将太、西口賢弥、橋詰保
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Surface passivation structures for GaN power transistors2016
- Author(s)
  T. Hashizume
- Organizer
  Advanced Metallization Conference 2016 (ADMETA-2016)
- Place of Presentation
  東京大学
- Year and Date
  2016-10-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] nterface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions2016
- Author(s)
  T. Sato, Y. Kumazaki, M. Edamoto, M. Akazawa and T. Hashizume
- Organizer
  SPIE Photonics West 2016
- Place of Presentation
  The Moscone Center, San Francisco, USA
- Year and Date
  2016-02-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Influence of dry etching on Al2O3/AlGaN/GaN MOS interface properties2015
- Author(s)
  Z. Yatabe, J. Ohira, T. Sato and T. Hashizume
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Photoelectric energy conversion in GaN porous nanostructures formed by electrochemical process2015
- Author(s)
  T. Sato, Y. Kumazaki and T. Hashizume
- Organizer
  Energy, Materials and Nanotechnology: The Collaborative Conference on Crystal Growth 2015 (EMN-3CG 2015)
- Place of Presentation
  Eaton Hotel, Hong Kong, China
- Year and Date
  2015-12-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] High-selective etching of p-GaN layers on AlGaN/GaN heterostructures by electrochemical process2015
- Author(s)
  M. Edamoto, Y. Kumazaki, Z. Yatabe, T. Sato and T. Hashizume
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 界面・バルク電子準位がGaNトランジスタの動作特性に与える影響2014
- Author(s)
  橋詰保, 西口賢弥, 谷田部然治, 佐藤威友
- Organizer
  第1回先進パワー半導体分科会研究会「ワイドギャップ半導体パワーデバイスの信頼性」
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2014-07-30
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 窒化物半導体異種接合の評価と制御2014
- Author(s)
  佐藤威友, 赤澤正道, 橋詰保
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（神奈川県相模原市）
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] AlGaN/GaN ヘテロ構造上に形成したp-GaN層の選択的電気化学エッチング2014
- Author(s)
  熊崎祐介, 佐藤威友, 橋詰保
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（神奈川県相模原市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] GaNパワーデバイスにおける異種接合界面の制御2013
- Author(s)
  橋詰保
- Organizer
  日本表面科学会第74回表面科学研究会平成24年度中部表面科学シンポジウム
- Place of Presentation
  名古屋大学、名古屋
- Year and Date
  2013-01-26
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaNパワーデバイスにおける異種接合界面の制御2013
- Author(s)
  橋詰　保
- Organizer
  表面科学会第７４回表面科学研究会平成２４年度中部表面科学シンポジウム
- Place of Presentation
  名古屋大学、名古屋
- Invited
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] InAlN/GaN ヘテロ構造の表面・界面の評価と制御2013
- Author(s)
  赤澤正道、橋詰　保
- Organizer
  応用物理学関係連合講演会シンポジウム
- Place of Presentation
  神奈川工科大学、神奈川県
- Invited
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] 「InAlN/GaNヘテロ構造の表面・界面の評価と制御」、応用物理学関係連合講演会シンポジウム:GaN系材料表面・界面評価の進展2013
- Author(s)
  赤澤正道、橋詰保
- Organizer
  第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学、神奈川
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Selective etching of p-GaN layers for normally-off AlGaN/GaN HEMTs by electrochemical process2013
- Author(s)
  3. Y. Kumazaki, N. Azumaishi, H. Ueda, M. Kanechika, H. Tomita, T. Sato and T. Hashizume
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gaylord National Hotel and Convention Center Washington (Washington DC, USA)
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] GaN-based MOS structures processed with plasma-assisted dry etching (Invited)2012
- Author(s)
  T.Hashizume
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)
- Place of Presentation
  中部大学(愛知県)(招待講演)
- Year and Date
  2012-03-07
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaNおよびAlGaNのバルク準位と界面準位評価2012
- Author(s)
  橋詰　保
- Organizer
  第４回窒化物半導体結晶成長講演会
- Place of Presentation
  東大生研、東京
- Invited
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaN系絶縁膜界面の制御とパワートランジスター応用2012
- Author(s)
  橋詰保
- Organizer
  応用電子物性分科会研究例会
- Place of Presentation
  金沢工業大学大学院虎ノ門キャンパス、東京。
- Year and Date
  2012-11-02
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Interface characterization of Al2O3/AlGaN/GaN structure with inductively coupled plasma etching of AlGaN surface2012
- Author(s)
  Z. Yatabe, Y. Hori, S. Kim and T. Hashizume
- Organizer
  2012 International Conference on Solid-State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto Convention Center (Japan)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaN transistors for next-generation power conversion system2012
- Author(s)
  J.T.Asubar, T.Hashizume
- Organizer
  International Symposium on Technology for Sustainability
- Place of Presentation
  King Mongkuts Institute of Technology (Thailand)(招待講演)
- Year and Date
  2012-01-27
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaN系ヘテロ界面構造の特徴とその評価2012
- Author(s)
  橋詰保
- Organizer
  2012年春季第59回応用物理学関係連合講演会シンポジウム[窒化物半導体における特異構造の理解と制御]
- Place of Presentation
  早稲田大学(東京)(招待講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Effects of ICP Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Structures2012
- Author(s)
  Z. Yatabe, Y. Hori, S. Kim and T. Hashizume
- Organizer
  36th Workshop on Semiconductor Devices and Integrated Circuits (WOCSDICE-2012)
- Place of Presentation
  Village Club IGESA (France)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Insulated gate technologies for high-performance GaN transistors2012
- Author(s)
  T. Hashizume
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo Convention Center, Japan.
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaN系絶縁膜界面の制御とパワートランジスター応用2012
- Author(s)
  橋詰　保
- Organizer
  応用電子物性分科会研究例会：ワイドギャップ半導体パワーデバイスの進展
- Place of Presentation
  金沢工業大学大学院　虎ノ門キャンパス、東京
- Invited
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Characterization and control of insulated gates for GaN power switching transistors2012
- Author(s)
  T. Hashizume
- Organizer
  The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM-2012)
- Place of Presentation
  House of Scientists of Slovak Academy of Sciences, Slovakia.
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Reduction of off-stress-induced current co;;apse in multi-mesa-channel AlGaN/GaN HEMT2012
- Author(s)
  K. Ohi and T. Hashizume
- Organizer
  36th Workshop on Semiconductor Devices and Integrated Circuits (WOCSDICE-2012)
- Place of Presentation
  Village Club IGESA (France)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaN-based MOS structures processed with plasma-assisted dry etching2012
- Author(s)
  T. Hashizume
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)
- Place of Presentation
  Chubu University, Kasugai
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaN transistors for next-generation power conversion system2012
- Author(s)
  J. T. Asubar and T. Hashizume
- Organizer
  International Symposium on Technology for Sustainability
- Place of Presentation
  King Mongkut's Institute of Technology, Bangkok, Thailand
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] In-grown and process-induced deep levels in AlGaN alloys2012
- Author(s)
  T. Hashizume
- Organizer
  International Workshop on "Frontier of Nitride Semiconductor Alloy Photonics (NSAP)"
- Place of Presentation
  Hotel Springs, Chiba
- Year and Date
  2012-05-10
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] In-grown and process-induced deep levels in AlGaN alloys2012
- Author(s)
  T. Hashizume
- Organizer
  International Workshop on "Frontier of Nitride Semiconductor Alloy Photonics (NSAP)
- Place of Presentation
  Hotel Springs, Chiba
- Invited
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Insulated gate technologies for high-performance GaN transistors2012
- Author(s)
  T. Hashizume
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo Convention Center (Japan)
- Invited
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaNおよびAlGaNのバルク準位と界面準位評価2012
- Author(s)
  橋詰保
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東大生研、東京
- Year and Date
  2012-04-27
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Characterization and control of insulated gates for GaN power switching transistors2012
- Author(s)
  T. Hashizume
- Organizer
  The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM-2012)
- Place of Presentation
  House of scientists of Slovak academy of sciences (Slovakia)
- Invited
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Characterization of MOS interfaces based on GaN-related heterostructures2012
- Author(s)
  Y. Hori, Z. Yatabe and T. Hashizume
- Organizer
  Workshop on Dielectrics in Microellectronics (WoDiM 2012)
- Place of Presentation
  Quality Hotel Plaza Dresden (Germany)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/GaN structures from capacitance–voltage and photocapacitance–light intensity measurements2012
- Author(s)
  M. Matysi, M. Miczek, B. Adamowicz, and T. Hashizume
- Organizer
  31st International Conference on the Physics of Semiconductors (ICPS 2012)
- Place of Presentation
  ETH Zurich (Switzerland)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Electronic State Characterization of Al2O3/AlGaN/GaN Structures Prepared by Atomic Layer Deposition2011
- Author(s)
  Y.Hori, C.Mizue, T.Hashizume
- Organizer
  13th International Conference on Formation of Semiconductor Interfaces (ICFSI-13)
- Place of Presentation
  Academy of Science (Czech Republic)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Normally-Off AlGaN/GaN HEMT with Recessed-Oxide Gate by Selective Electrochemical Oxidation2011
- Author(s)
  K.Ohi, N.Harada, N.Azumaishi, T.Hashizume
- Organizer
  13th International Conference on Formation of Semiconductor Interfaces (ICFSI-13)
- Place of Presentation
  Academy of Science (Czech Republic)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Characterization of Off-State-Induced Current Collapse in AlGaN/GaN HEMTs Using Dual-gate Architecture2011
- Author(s)
  J.T.Asubar, M.Tajima, T.Hashizume
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Scottish Exhibition and Conference Centre (UK)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Selective Electrochemical Formation of Recessed-Oxide-Gate Structures for AlGaN/GaN HEMTs2011
- Author(s)
  N.Azumaishi, N.Harada, T.Hashizume
- Organizer
  2011 International Conference on Solid-state Devices and Materials (SSDM2011)
- Place of Presentation
  愛知県産業労働センター(名古屋市)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] The Role of the Gate-Source Region on the Off-state Bias-induced Current Collapse of AlGaN/GaN HEMTs2011
- Author(s)
  J.T.Asubar, T.Tajima, T.Hashizume
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors (APWS)
- Place of Presentation
  鳥羽国際ホテル(三重県)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] On-State Bias Stress Induced Trapping Effects in Access Region of AlGaN/GaN HEMTs2011
- Author(s)
  C.-Y. Hu, T.Hashizume
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Scottish Exhibition and Conference Centre (UK)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Multi-Mesa-Channel AlGaN/GaN HEMT with Resistance to Off-Stress-Induced Current Collapse2011
- Author(s)
  K.Ohi, T.Hashizume
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Scottish Exhibition and Conference Centre (UK)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Characterization and control of dry-etched GaN surfaces2011
- Author(s)
  Z.Yatabe, S.-S.Kim, N.Azumaishi, T.Sato, T.Hashizume
- Organizer
  6th Interbnnational Symposium on Surface Science (ISSS-6)
- Place of Presentation
  タワーホール船堀(東京)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Control of Electronic States at Al2O3/GaN and Al2O3/AlGaN Interfaces Prepared by Atomic Layer Deposition2011
- Author(s)
  Y.Hori, C.Mizue, T.Hashizume
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Scottish Exhibition and Conference Centre (UK)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Characterization and control of GaN-based MOS structures2011
- Author(s)
  T. Hashizume, Y. Hori, and C. Mizue
- Organizer
  2011 Meijo International Symposium on Nitride Semiconductors (MSN2011)
- Place of Presentation
  Meijo University, Nagoya
- Year and Date
  2011-10-10
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaNヘテロ接合トランジスタの次世代インバータ展開2011
- Author(s)
  橋詰保
- Organizer
  日本金属学会第3分科会シンポジウム「環境・医療・IT調和型デバイス、及び材料の最前線」
- Place of Presentation
  科学技術館、東京
- Year and Date
  2011-09-22
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] GaNヘテロ接合トランジスタの次世代インバータ展開2011
- Author(s)
  橋詰保
- Organizer
  日本金属学会第3分科会シンポジウム「環境・医療・IT調和型デバイス、及び材料の最前線」
- Place of Presentation
  科学技術館(東京)(招待講演)
- Year and Date
  2011-10-14
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Characterization and control of GaN-based MOS structures2011
- Author(s)
  T.Hashizume, Y.Hori, C.Mizue
- Organizer
  2011 Meijo International Symposium on Nitride Semiconductors (MSN 2011)
- Place of Presentation
  名城大学(名古屋市)(招待講演)
- Year and Date
  2011-12-10
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] 窒化物半導体の表面・界面制御とパワートランジスタ展開2010
- Author(s)
  橋詰保
- Organizer
  日本学術振興会アモルファス・ナノ材料第147委員会第108回研究会
- Place of Presentation
  主婦会館、東京
- Year and Date
  2010-07-09
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] A recessed oxide gate structure for threshold voltage control in AlGaN/GaN HEMTs by electrochemical process2010
- Author(s)
  N.Harada, T.Hashizume
- Organizer
  2010 International Workshop on Nitride Semiconductors (IWN-2010)
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Current controllability and stability of multi-mesa-channel AlGaN/GaN HEMTs2010
- Author(s)
  T.Hashizume, K.Ohi
- Organizer
  2010 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Osaka(Invited 招待講演)
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Deep level characterization of MOVPE-grown AlGaN with high Al compositions2010
- Author(s)
  S.Okuzaki, K.Sugawara, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
- Organizer
  2010 International Conference on Solid-State Devices and Materials (SSDM2010)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Current Controllability and Stability in Multi-Mesa-Channel AlGaN/GaN HEMT2010
- Author(s)
  K.Ohi, T.Hashizume
- Organizer
  2010 International Workshop on Nitride Semiconductors (IWN-2010)
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Optical and Electrical Properties of InP Porous Structures Formed on p-n Substrates2010
- Author(s)
  T.Sato, A.Mizohata, N.Yoshizawa, T.Hashizume
- Organizer
  2010 International RCIQE/CREST Joint Workshop
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2010-03-01
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] Effects of plasma processing on surface properties of GaN and AlGaN2010
- Author(s)
  T. Hashizume
- Organizer
  2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma-2010)
- Place of Presentation
  Meijo Univ., Nagoya
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Deep level characterization of MOVPE-grown AlGaN with high Al compositions2010
- Author(s)
  S.Okuzaki, K.Sugawara, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
- Organizer
  2010 International Conference on Solid-State Devices and Materials (SSDM2010)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Effects of Mg-doping density and high-temperature annealing on deep levels in Mg-doped GaN2010
- Author(s)
  E.Ogawa, T.Hashizume
- Organizer
  2010 International Workshop on Nitride Semiconductors (IWN-2010)
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Effects of fabrication processes on electrical properties of Al_2O_3/n-GaN structures prepared by atomic layer deposition2010
- Author(s)
  Y.Hori, T.Hashizume
- Organizer
  2010 International Workshop on Nitride Semiconductors (IWN-2010)
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Effects of plasma processing on surface properties of GaN and AlGaN(Invited)2010
- Author(s)
  橋詰保
- Organizer
  2^<nd> International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma-2010)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Interface control technologies of GaN-based MOS structures for high-efficiency power switching transistors2010
- Author(s)
  T.Hashizume, Y.Hori, C.Mizue
- Organizer
  Workshop on Dielectrics in Microellectronics (WoDiM 2010)
- Place of Presentation
  Bratislava, Slovak(Invited 招待講演)
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] 窒化物半導体の特徴とデバイス展開(Invited)2010
- Author(s)
  橋詰保
- Organizer
  第27回無機材料に関する最近の研究成果発表会-材料研究の最前線から-
- Place of Presentation
  東京
- Year and Date
  2010-01-25
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] 電気化学的手法を用いて形成したInPポーラス構造の電気的特性2010
- Author(s)
  岡崎拓行, 吉澤直樹, 佐藤威友, 橋詰保
- Organizer
  平成22年春期応用物理学関係連合講演会
- Place of Presentation
  東海大学、神奈川県平塚市
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] Effects of plasma processing on surface properties of GaN and AlGaN(Invited)2010
- Author(s)
  T.Hashizume
- Organizer
  2^<nd> International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma-2010)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] AlGaNの深い電子準位と表面ポテンシャル(Invited)2010
- Author(s)
  橋詰保
- Organizer
  防用物理学会応用電子物性分科会研究会
- Place of Presentation
  大阪招待講演
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Interface state properties of Al_2O_3/n-GaN prepared by atomic layer deposition2010
- Author(s)
  Y.Hori, C.Mizue, T.Hashizume
- Organizer
  International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] InP-pn接合基板へのポーラス構造形成および電気的特性評価2010
- Author(s)
  吉澤直樹, 岡崎拓行, 佐藤威友, 橋詰保
- Organizer
  平成22第45回応用物理学会北海道支部/第6回日本光学会北海道支部合同学術講演-
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2010-01-08
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] MOVPE法によるAlGaN中の深い準位(Invited)2010
- Author(s)
  橋詰保
- Organizer
  応用物理学会シンポジウム(ワイドギャップ窒化物AlGaNの結晶評価と深紫外光デバイス応用)
- Place of Presentation
  長崎招待講演
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Interface control technologies of GaN-based MOS structures for high-efficiency power switching transistors (Invited)2010
- Author(s)
  T.Hashizume, Y.Hori, C.Mizue
- Organizer
  Workshop on Dielectrics in Microellectronics(WoDiM 2010)
- Place of Presentation
  Bratislava, Slovak 招待講演
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] 窒化物半導体の表面・界面制御とパワートランジスタ展開(Invited)2010
- Author(s)
  橋詰保
- Organizer
  日本学術振興会アモルファス・ナノ材料第147委員会第108回研究会
- Place of Presentation
  東京招待講演
- Year and Date
  2010-07-09
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] 窒化物半導体の表面・界面制御とパワートランジスタ展開2010
- Author(s)
  橋詰保
- Organizer
  日本学術振興会アモルファス・ナノ材料第147委員会第108回研究会
- Place of Presentation
  東京(Invited 招待講演)
- Year and Date
  2010-07-09
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Current Controllability and Stability in Multi-Mesa-Channel AlGaN/GaN HEMT2010
- Author(s)
  K.Ohi, T.Hashizume
- Organizer
  2010 International Workshop on Nitride Semiconductors (IWN-2010)
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Effects of fabrication processes on electrical properties of Al_2_O_3/n-GaN structures prepared by atomic layer deposition2010
- Author(s)
  Y.Hori, T.Hashizume
- Organizer
  2010 International Workshop on Nitride Semiconductors (IWN-2010)
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Current controllability and stability of multi-mesa-channel AlGaN/GaN HEMTs (Invited)2010
- Author(s)
  T.Hashizume, K.Ohi
- Organizer
  2010 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Osaka 招待講演
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] MOVPE法によるAlGaN中の深い準位2010
- Author(s)
  橋詰保
- Organizer
  応用物理学会シンポジウム(ワイドギャップ窒化物AlGaNの結晶評価と深紫外光デバイス応用)
- Place of Presentation
  長崎大学、長崎
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] 電気化学的手法によるInP多孔質構造の形成と高感度化学センサへの応用2010
- Author(s)
  佐藤威友, 吉澤直樹, 岡崎拓行, 橋詰保
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北陸先端科学技術大学、能美市
- Year and Date
  2010-06-17
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] Trapping Region Extension at the Gate-Drain Opening of AlGaN/GaN Heterojunction Field-Effect Transistors Subjected to On-State Stress2010
- Author(s)
  C.-Y.Hu, T.Hashizume, K.Ohi, M.Tajima
- Organizer
  2010 International Workshop on Nitride Semiconductors (IWN-2010)
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Interface state properties of Al_2O_3/n-GaN prepared by atomic layer deposition2010
- Author(s)
  Y.Hori, C.Mizue, T.Hashizume
- Organizer
  International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Effects of Mg-doping density and high-temperature annealing on deep levels in Mg-doped GaN2010
- Author(s)
  E.Ogawa, T.Hashizume
- Organizer
  2010 International Workshop on Nitride Semiconductors (IWN-2010)
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] AlGaNの深い電子準位と表面ポテンシャル2010
- Author(s)
  橋詰保
- Organizer
  応用物理学会応用電子物
- Place of Presentation
  大阪大学銀杏会館、大阪
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] 窒化物半導体の特徴とデバイス展開2010
- Author(s)
  橋詰保
- Organizer
  第27回無機材料に関する最近の研究成果発表会-材料研究の最前線から-
- Place of Presentation
  東海大学校友会館、東京
- Year and Date
  2010-01-25
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Current controllability and stability of multi-mesa- channel lGaN/GaN HEMTs2010
- Author(s)
  T. Hashizume and K. Ohi
- Organizer
  2010 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Kansai Univ., Osaka
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] A recessed oxide gate structure for threshold voltage control in AlGaN/GaN HEMTs by electrochemical process2010
- Author(s)
  N.Harada, T.Hashizume
- Organizer
  2010 International Workshop on Nitride Semiconductors (IWN-2010)
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] AlGaNの深い電子準位と表面ポテンシャル2010
- Author(s)
  橋詰保
- Organizer
  応用物理学会応用電子物性分科会研究会
- Place of Presentation
  大阪(Invited 招待講演)
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] C-V characterization of ALD-Al_2O_3 insulated gates on AlGaN/GaN structure2010
- Author(s)
  C.Mizue, T.Hashizume
- Organizer
  Workshop on Dielectrics in Microellectronics (WoDiM 2010)
- Place of Presentation
  Bratislava, Slovak
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] C-V characterization of ALD-Al_2O_3 insulated gates on AlGaN/GaN structure2010
- Author(s)
  C.Mizue, T.Hashizume
- Organizer
  Workshop on Dielectrics in Microellectronics (WoDiM 2010)
- Place of Presentation
  Bratislava, Slovak
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Trapping Region Extension at the Gate-Drain Opening of AlGaN/GaN Heterojunction Field-Effect Transistors Subjected to On-State Stress2010
- Author(s)
  C.-Y.Hu, T.Hashizume, K.Ohi, M.Tajima
- Organizer
  2010 International Workshop on Nitride Semiconductors (IWN-2010)
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Interface control technologies of GaN-based MOS structures for high-efficiency power switching transistors2010
- Author(s)
  T. Hashizume, Y. Hori and C. Mizue
- Organizer
  Workshop on Dielectrics in Microellectronics (WoDiM 2010)
- Place of Presentation
  Hotel SUZA, Bratislava, Slovak
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] MOVPE法によるAlGaN中の深い準位2010
- Author(s)
  橋詰保
- Organizer
  応用物理学会シンポジウム(ワイドギャップ窒化物AlGaNの結晶評価と深紫外光デバイス応用)
- Place of Presentation
  長崎(Invited 招待講演)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] 窒化物半導体の特徴とデバイス展開(Invited)2010
- Author(s)
  橋詰保
- Organizer
  第27回無機材料に関する最近の研究成果発表会-材料研究の最前線から-
- Place of Presentation
  東京
- Year and Date
  2010-01-25
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Multi-Mesa-Channel Structure for Improvement of Gate Controllability and Current Stability in AlGaN/GaN HEMTs2009
- Author(s)
  K.Ohi, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Chemical and electronic properties of ALD-Al_2O_3/AlGaN interfaces2009
- Author(s)
  Y.Hori, C.Mizue, K.Ooyama, M.Miczek, T.Hashizume
- Organizer
  2009 International Conference on Solid-State Devices and Materials(SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Mg accumulation and defect formation at p-GaN surfaces caused by a high-temperature annealing2009
- Author(s)
  E.Ogawa, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] 窒化物半導体のMIS界面電子準位(Invited)2009
- Author(s)
  橋詰保
- Organizer
  日本学術振興会第154委員会・第162委員会合同研究会
- Place of Presentation
  東京
- Year and Date
  2009-10-26
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Characterization and control of GaN and AlGaN surfaces for high-performance GaN-based transistors(Invited)2009
- Author(s)
  T.Hashizume
- Organizer
  Huang Kun Forum
- Place of Presentation
  Chinese Academy of Science, Beijin, China
- Year and Date
  2009-11-06
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Chemical and Electronic Properties of MOVPE-grown Al_xGa_<1-x>N Surfaces(0.25<x<0.68)2009
- Author(s)
  T.Kubo, K.Sugawara, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] ポーラス構造を形成したInP-pn接合基板の電気的特性2009
- Author(s)
  吉澤直樹, 岡崎拓行, 佐藤威友, 橋詰保
- Organizer
  平成21年秋期応用物理学会学術講演会
- Place of Presentation
  富山大学、富山県富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition2009
- Author(s)
  K.Ooyama, C.Mizue, Y.Hori, T.Hashizume
- Organizer
  2009 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2009)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Electrochemical oxidation of GaN for surface control of GaN-based device structures2009
- Author(s)
  N.Harada, N.Shiozaki, T.Hashizume
- Organizer
  2009 International Conference on Solid-State Devices and Malerials(SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Electrochemical oxidation of GaN for surface control of GaN-based device structures2009
- Author(s)
  N.Harada, N.Shiozaki, T.Hashizume
- Organizer
  2009 International Conference on Solid-State Devices and Materials(SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Chemical and electronic properties of ALD-Al_2O_3/AlGaN interfaces2009
- Author(s)
  Y.Hori, C.Mizue, K.Ooyama, M.Miczek, T.Hashizume
- Organizer
  2009 International Conference on Solid-State Devices and Materials(SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Characterization and control of GaN and AlGaN surfaces for high-performance GaN-based transistors(Invited)2009
- Author(s)
  橋詰保
- Organizer
  Huang Kun Forum
- Place of Presentation
  Chinese Academy of Science, Beijin, China
- Year and Date
  2009-11-06
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Characterization and control of GaN and AlGaN surfaces for high- performance GaN-based transistors2009
- Author(s)
  T. Hashizume
- Organizer
  Huang Kun Forum
- Place of Presentation
  Chinese Academy of Science, Beijin, China
- Year and Date
  2009-11-06
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Characterization of interface electronic states in ALD-Al_2O_3/AlGaN/GaN structures2009
- Author(s)
  C.Mizue, Y.Hori, M.Miczek, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Mg accumulation and defect formation at p-GaN surfaces caused by a high-temperature annealing2009
- Author(s)
  E.Ogawa, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Formation and application of InP porous structures on p-n substrates2009
- Author(s)
  T.Sato, N.Yoshizawa, H.Okazaki, T.Hashizume
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
- Place of Presentation
  Hae-un-dae Grand Hotel、釜山、韓国
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] 窒化物半導体のMIS界面電子準位2009
- Author(s)
  橋詰保
- Organizer
  日本学術振興会第154委員会・第162委員会合同研究会
- Place of Presentation
  キャンパスイノベーションセンター東京
- Year and Date
  2009-10-26
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Effects of high-temperature anneal on surface properties of Mg-doped GaN2009
- Author(s)
  E.Ogawa, T.Hashizume
- Organizer
  2009 International Meeting for Future of Electron Devices, Kansai(IMFEDK)
- Place of Presentation
  Osaka, Japan
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Multi-Mesa-Channel Structure for Improvement of Gate Controllability and Current Stability in AlGaN/GaN HEMTs2009
- Author(s)
  K.Ohi, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Correlation between surface leakage current and operation degradation of AlGaN/GaN HEMTs2009
- Author(s)
  M.Tajima, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] (Invited) Surface control of GaN alloys for photonic and electronic devices2009
- Author(s)
  T. Hashizume
- Organizer
  Society of Photographic Instrumentation Engineers (SPIE), Photonics West
- Place of Presentation
  San Hose, CA, USA
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] 窒化物半導体のMIS界面電子準位(Invited)2009
- Author(s)
  橋詰保
- Organizer
  日本学術振興会第154委員会・第162委員会合同研究会
- Place of Presentation
  東京
- Year and Date
  2009-10-26
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Characterization of Schottky interface properties and deep levels of Al_xGa_<1-x>N(0.25<x<0.68)grown by MOVPE2009
- Author(s)
  K.Sugawara, T.Kubo, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition2009
- Author(s)
  K.Ooyama, C.Mizue, Y.Hori, T.Hashizume
- Organizer
  2009 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2009)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Chemical and Electronic Properties of MOVPE-grown Al_xGa_<1-x>N Surfaces(0.25<x<0.68)2009
- Author(s)
  T.Kubo, K.Sugawara, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching2009
- Author(s)
  T.Sato, N.Yoshizawa, H.Okazaki, T.Hashizume
- Organizer
  216th Meeting of the Electrochemical Society
- Place of Presentation
  Austria Center Vienna、ウィーン、オーストリア
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] Correlation between surface leakage current and operation degradation of AlGaN/GaN HEMTs2009
- Author(s)
  M.Tajima, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PUBLICLY-21016001
[Presentation] Characterization of interface electronic states in ALD-Al_2O_3/AlGaN/GaN structures2009
- Author(s)
  C.Mizue, Y.Hori, M.Miczek, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Characterization of Schottky interface properties and deep levels of Al_xGa_<1-x>N(0.25<x<0.68)grown by MOVPE2009
- Author(s)
  K.Sugawara, T.Kubo, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] Depletion layer modulation at the Al_2O_3/n-GaN interface under UV-illumination2008
- Author(s)
  Chihoko Mizue and Tamotsu Hashizume
- Organizer
  2008 International Workshop on Nitride Semiconductors (IWN-2008)
- Place of Presentation
  Montreux, Swizerland
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Variation of Mg density and conductivity at p-GaN surfaces caused by high-temperature anneal2008
- Author(s)
  Eri Ogawa and Tamotsu Hashizume
- Organizer
  2008 International Workshop on Nitride Semiconductors (IWN-2008)
- Place of Presentation
  Montreux, Swizerland
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Near-midgap deep levels in MOVPE-grown AlGaN2008
- Author(s)
  K. Sugawara, J. Kotani and T. Hashizume
- Organizer
  2008 International Conference on Solid-State Devices and Materials (SSDM2008)
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Impacts of Surface of Oxidation and Oxynitridation on DC Characteristics of AlGaN/GaN HEMTs2008
- Author(s)
  Masafumi Tajima and Tamostu Hashizume
- Organizer
  2008 International Workshop on Nitride Semiconductors (IWN-2008)
- Place of Presentation
  Montreux, Swizerland
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] (Invited) Surface control structures for high-performance AIGaN/GaN HEMTs2008
- Author(s)
  T. Hashizume
- Organizer
  7th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2008)
- Place of Presentation
  Smolenice, Slovakia
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] (Invited) Surface control of AlGaN for the stability improvement of AlGaN/GaN HEMTs2008
- Author(s)
  T. Hashizume
- Organizer
  66th Device Research Conference(DRC-66)
- Place of Presentation
  Univ. California, Santa Barbara, USA
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Control of Electronic States at n-GaN Surfaces by Photoelectrochemical Oxidation in Glycol Solution2008
- Author(s)
  Nanako Shiozaki, Taketomo Sato, Tamotsu Hashizume
- Organizer
  2008 International Workshop on Nitride Semiconductors (IWN-2008)
- Place of Presentation
  Montreux, Swizerland
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Characterization of GaN surfaces after high-temperature annealing and carbon diffusion2008
- Author(s)
  T. Kimura and T. Hashizume
- Organizer
  Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2008)
- Place of Presentation
  Sapporo
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Impurity incorporation and Ga outdiffusion at n-GaN surfaces during high-temperature annealing processes2008
- Author(s)
  Takshi Kimura and Tamotsu Hashizume
- Organizer
  2008 International Workshop on Nitride Semiconductors (IWN-2008)
- Place of Presentation
  Montreux, Swizerland
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Mesa-gate AlGaN/GaN HEMTs having narrow-width channels2008
- Author(s)
  K. Ohi, T. Tamura, J. Kotani and T. Hashizume
- Organizer
  2008 International Conference on Solid-State Devices and Materials(SSDM2008)
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Characterization of thin native-oxide layer formed on GaN by photoelectrochemical process in glycol solution2007
- Author(s)
  N. Shiozaki and T. Hashizume
- Organizer
  International Conference on Nano Science and Technology (ICN+T 2007)
- Place of Presentation
  Stockholm International Fairs, Stockholm, Sweden
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Analysis of lateral surface leakage in the vicinity of Schottky gates in AlGaN/GaN HEMTs2007
- Author(s)
  J. Kotani, M. Tajima, S. Kasai and T. Hashizume
- Organizer
  65th Annual Device Research Conference (DRC-65)
- Place of Presentation
  University of Notre Dame, South Bend, USA
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] The effects of interface states on C-V behavior of insulated gates on AlGaN/GaN heterostructures2007
- Author(s)
  M. Miczek, C. Mizue and T. Hashizume
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM Grand Hotel, Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Interface state characterization of insulating gates on AlGaN layers and AlGaN/GaN heterostructures2007
- Author(s)
  C. Mizue, J. Kotani, M. Miczek, T. Hashizume
- Organizer
  2007 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Osaka University Nakanoshima Center, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Correlation between chemical and electrical properties of p-GaN surfaces subjected to halogen-based plasma2007
- Author(s)
  E. Ogawa, M. Sugimoto, T. Kachi, T. Uesugi, N. Soejima, T. Hashizume
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Dynamic response of interface state charges in GaN MIS structures2007
- Author(s)
  K. Ooyama, H. Kato, M. Miczek and T. Hashizume
- Organizer
  2007 International Conference on Solid-State Devices and Materials (SSDM2007)
- Place of Presentation
  Tsukuba International Congress Center, Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] High-quality native oxide of GaN for surface passivation formed by photo-enhanced electrochemical process2007
- Author(s)
  N. Shiozaki, F. Ishikawa, A. Trampert, H. T. Grahn, T. Hashizume
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM Grand Hotel, Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] ドライエッチングがAl2O3/AlGaN/GaN MOS界面特性に与える影響
- Author(s)
  谷田部然治, 大平城二, 佐藤威友, 橋詰保
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289079

1. HASEGAWA Hideki (60001781)

# of Collaborated Projects: 14 results

# of Collaborated Products: 0 results
2. MOTOHISA Junichi (60212263)

# of Collaborated Projects: 12 results

# of Collaborated Products: 0 results
3. SATO Taketomo (50343009)

# of Collaborated Projects: 11 results

# of Collaborated Products: 52 results
4. FUJIKURA Hajime (70271640)

# of Collaborated Projects: 11 results

# of Collaborated Products: 0 results
5. AKAZAWA Masamichi (30212400)

# of Collaborated Projects: 8 results

# of Collaborated Products: 8 results
6. KASAI Seiya (30312383)

# of Collaborated Projects: 8 results

# of Collaborated Products: 5 results
7. KANESHIRO Chinami (30318993)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
8. WU Nan-jan (00250481)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
9. KOGA Hiroaki (80519413)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
10. 福井孝志 (30240641)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
11. SEKI Shouhei

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
12. AMEMIYA Yoshihito (80250489)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
13. KANEKO Masamitsu (70374709)

# of Collaborated Projects: 2 results

# of Collaborated Products: 12 results
14. TAKEYAMA Mayumi (80236512)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
15. JIANG Chao

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
16. IKEBE Masayuki (20374613)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. KUBO Toshiharu (10422338)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
18. YATABE Zenji (00621773)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
19. KAWABE Mitsuo (80029446)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. OURA Kenjiro (60029288)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. YAO Takafumi (60230182)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. ARAI Shigehisa (30151137)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. SHIMOZUMA Mitsuo (70041960)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. DATE Hiroyuki (10197600)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. FUJIOKA Hiroshi (50282570)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. Suemitsu Tetsuya (90447186)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. OKADA Hiroshi (30324495)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. 酒井朗 (20314031)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. 川上養一 (30214604)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
31. 小出康夫 (70195650)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
32. 三宅秀人 (70209881)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
33. 三好実人 (30635199)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
34. SAKAI Takamasa

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
35. UEDA Daisuke

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
36. 韓哲九

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
37. 安海岩

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
38. ASUBAR JOEL

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

HASHIZUME Tamotsu 橋詰 保

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Interface control of heterojunctions including singularity structures for advanced electron devicesPrincipal Investigator

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窒化物半導体混晶のバルク準位評価とナノ構造表面制御Principal Investigator

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Reliability improvement of GaN transistors based on the control of electronic states and a nobel gate structurePrincipal Investigator

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III族窒化物半導体混晶の欠陥準位・表面準位の評価と制御Principal Investigator

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Reliability improvement of GaN-based devices by controlling defects and interfacesPrincipal Investigator

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Surface/interface control of high-frequency and high-power transistors based on GaN materialsPrincipal Investigator

HASHIZUME Tamotsu 橋詰保