OHYAMA Hidenori 大山英典

Researcher Number	80152271
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Affiliation (based on the past Project Information) *help	2005 – 2007: 熊本電波工業高等専門学校, 電子工学科, 教授 2004: Kumamoto National College of Technology, Department of Electronic Engineering, Professor, 電子工学科, 教授 2004: 独立行政法人国立高等専門学校機構熊本電波工業高等専門学校, 電子工学科, 教授 2000 – 2003: 熊本電波工業高等専門学校, 電子工学科, 教授 1995 – 1999: 熊本電波工業高等専門学校, 電子工学科, 助教授
Review Section/Research Field	Principal Investigator 電子デバイス・機器工学 / Electronic materials/Electric materials Except Principal Investigator Inorganic materials/Physical properties / Engineering fundamentals / Physical properties of metals / エネルギー学一般 / Structural/Functional materials / Electronic materials/Electric materials
Keywords	Principal Investigator Recovery by annealing / Induced lattice defects / SiGe hetero device / High energy particle / Radiation damage / 格子欠陥 / 半導体デバイス / Radiation source dependence of radiation atom / Degradation of performance / submicron MOSFETs … More / 回復 / 熱処理 / 劣化 / 宇宙空間 / 照射損傷 / 高エネルギー粒子 / Degradation / InGaAs HEMT / HEMT / InGaAs / SiGe / 特性劣化 / 放射線損傷 / 高エネルギー粒子線 … More Except Principal Investigator SiGe / 照射損傷 / MOSFET / 格子欠陥 / Electron / Radiation damage / 陽子線 / 電子線 / proton / radiation damage / 歪Si / 高温照射 / 半導体デバイス / Recovery by annealing / Induced lattice defects / Degradation / High energy particle / 回復 / 熱処理 / 劣化 / 宇宙空間 / 高エネルギー粒子 / 放射線 / SiC / recovery / induced lattice defect / SOI transisor / SiC transistor / electron / GaN LED / 特性劣化 / 宇宙環境 / SOI MOS / InGaAs photodiode / 高工ネルギー粒子 / Database / Ambient temperature / Solar radiation / Conversion efficiency / Generating characteristic / Solar cell / Photovoltaic / データベース化 / 気温 / 日射量 / 変換効率 / 発電特性 / 太陽電池 / 太陽光発電 / AlGaAs HEMT / InGaAs HEMT / InGaAsデバイス / Carbon / Praticle / Neutron / Proton / Hetero device / HBT / カーボン / 粒子線 / 中性子線 / ヘテロデバイス Less

Radiation damage mechanism of advanced semiconductor materials and devices
- Principal Investigator
  
  SHIGAKI Kazuasda
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Engineering fundamentals
- Research Institution
  Kumamoto National College of Technology
Irradiation temperature dependence of advanced semiconductor devices
- Principal Investigator
  
  KUDOU Tomohiro
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Kumamoto National College of Technology
Study on radiation damages of semiconductor devices for high and low temperature
- Principal Investigator
  
  SHIGAKI Kazusada
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Physical properties of metals
- Research Institution
  Kumamoto National College of Technology
Evaluation of Photovoltaic Performance by 40kW PV System Installed at National College of Technology and their Database
- Principal Investigator
  
  YAMAGUCHI Toshiyuki
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  エネルギー学一般
- Research Institution
  Wakayama National College of Technology
Radiation damage of InGaAs device and its decrease method
- Principal Investigator
  
  KAZUSADA Shigaki
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Structural/Functional materials
- Research Institution
  Kumamoto National College of Technology
Study on high-performance of advanced semiconductorPrincipal Investigator
- Principal Investigator
  
  OHYAMA Hidenori
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Kumamoto National College of Technology
Radiation in advanced semiconductor devices and materialsPrincipal Investigator
- Principal Investigator
  
  OHYAMA Hidenori
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for international Scientific Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kumamoto National College of Technology
High performance of SiGe devices
- Principal Investigator
  
  TOKUYAMA Junya
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kumamoto National College of Technology

All 2007 2006 2005 2004 2003 2002 Other

All Journal Article Presentation

[Journal Article] Effects of gate interface on performance degradation of irradiated SiC-MESFET2007
- Author(s)
  H. Ohyama, et. al.
- Journal Title
  
  Physica B 401-402
  
  Pages: 37-40
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Performance degradation mechanism of irradiated GaAlAs LED2007
- Author(s)
  H.Ohyama, et. al.
- Journal Title
  
  Physica B 401-402
  
  Pages: 33-36
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Degradation and their recovery behavior of irradiated GaAlAs LEDs2007
- Author(s)
  H. Ohyama, et. al.
- Journal Title
  
  Solid State Phenomena 131-133
  
  Pages: 119-124
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Effects of gate interface on performance degradation of irradiated SiC-MESFET2007
- Author(s)
  H.Ohyama, et. al.
- Journal Title
  
  Physica B 401-402
  
  Pages: 37-40
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Performance degradation mechanism of irradiated GaAlAsLED2007
- Author(s)
  H. Ohyama, et. al.
- Journal Title
  
  Physica B 401-402
  
  Pages: 33-36
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Radiation source dependence of device performance degradation for 4H-SiC MESFETs2006
- Author(s)
  H. Ohyama, et. al.
- Journal Title
  
  Superlattice and Microstructure 40
  
  Pages: 623-637
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Radiation source dependence of device performance degradation for 4H-SiC MESFETs2006
- Author(s)
  H.Ohyama et al.
- Journal Title
  
  Superlattice and Microstructure 40
  
  Pages: 623-637
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation2006
- Author(s)
  H.Ohyama et al.
- Journal Title
  
  Physica B 376-377
  
  Pages: 382-384
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons2006
- Author(s)
  H.Ohyama他
- Journal Title
  
  proceeding of the Materials Science in Semiconductor 9
  
  Pages: 292-292
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] Effects of radiation-induced defects on device performance in electron irradiated SiC-MESFETs2005
- Author(s)
  H.Ohyama, K.Takakura, T.Kudo 他
- Journal Title
  
  proceeding of the 11^<th> International Conference on Defects : Recognition and Physics in Semiconductors, DRIP XI, 15-19
  
  Pages: 78-78
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] Effects of radiation-induced defects on device performance in electron irradiated SiC-MESFETs2005
- Author(s)
  H.Ohyama et al.
- Journal Title
  
  proceeding of the 11^<th> International Conference on Defects : Recognition and Physics in Semiconductors, DRIP XI
  
  Pages: 78-78
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Radiation damage of SiC Schottky diodes by electron irradiation2005
- Author(s)
  H.Ohyama et al.
- Journal Title
  
  Journal of Materials Science 16
  
  Pages: 455-458
- Data Source
  KAKENHI-PROJECT-17560054
[Journal Article] Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons2005
- Author(s)
  K.Takakura, H.Ohyama, T.Kudo 他
- Journal Title
  
  proceeding of the 11^<th> International Conference on Defects : Recognition and Physics in Semiconductors, DRIP XI 15-19
  
  Pages: 101-101
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradition2004
- Author(s)
  K.Hayama, K.Takakura, H.Ohyama, A.Marcha, E.Simoen, C.Claeys, J.M.Rafi, M.Kokkoris
- Journal Title
  
  Microelectron.Reliab. 44
  
  Pages: 1721-1726
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Anomalous threshold voltage change by 2 MeV electron irradiation at 100 ℃ in deep submicron metal-oxide-semiconductor field-effect transistors2004
- Author(s)
  H.K.Hayama, Ohyama, E.Simoen, J.M.Rafi, A.Mercha, C.Claeys
- Journal Title
  
  Appl.Phys.Lett. 84
  
  Pages: 3088-3090
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Electron irradiation effect on thermal donors in CZ-Si2004
- Author(s)
  K.Takakura, H.Ohyama, H.Murakawa, T.Yoshida, J.M.Rafi, R.Job, A.Ulyashin, E.Simoen, C.Claeys
- Journal Title
  
  Eur.Phys.J.Appl.Phys. 27
  
  Pages: 133-135
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs2004
- Author(s)
  K.Hayama, K.Takakura, H.Ohyama, J.M.Rafi, A.Mercha, Simoen, C.Claeys
- Journal Title
  
  IEEE Trans.on Nucl.and Sci 51
  
  Pages: 3795-3800
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damages of InGaAs photodiodes by high-temperature electron irradiation2004
- Author(s)
  H.Ohyama, K.Takakura, M.Nakabayashi, T.Hirao, S.Onoda, T.Kamiya, E.Simoen, C.Claeys, S.Kuboyama, K.Oka, S.Matsuda
- Journal Title
  
  Nucl.Instrum.Methods B 219-220
  
  Pages: 718-721
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damages of InGaAs photodiodes by high-temperature electron irradiation2004
- Author(s)
  H.Ohyama et al.
- Journal Title
  
  Nucl.Instrum.Methods B Vol.219-220
  
  Pages: 718-721
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperature2004
- Author(s)
  H.Ohyama et al.
- Journal Title
  
  Nucl.Instrum.Methods B Vol.219-220
  
  Pages: 676-679
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damage induced in Si photodiodes by high-temperature neutron irradiation2003
- Author(s)
  H.Ohyama, E.Simoen, C.Claeys, K.Takakura, T.Jono, H.Matsuoka, J.Uemura, T.Kishikawa
- Journal Title
  
  Journal of Materials Science. 14
  
  Pages: 437-440
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Effects of irradiation temperature on radiation damage in electron-irradiated MOS FETs2003
- Author(s)
  H.Ohyama, K.Hayama, K.Takakura, E.Simoen, C.Claeys
- Journal Title
  
  Microelectronic Engineering 66
  
  Pages: 530-535
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damage of Si photodides by high-temperature irradiation2003
- Author(s)
  H.Ohyama, K.Takakura, K.Shigaki, T.Jono, E.Simoen, C.Claeys, J.Uemura, T.Kishikawa
- Journal Title
  
  Microelectronic Engineering 66
  
  Pages: 536-541
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Influence of irradiation temperature on electron-irradiated STI diodes2003
- Author(s)
  H.Ohyama, K.Hayama, K.Takakura, T.Miura, K.Shigaki, T.Jono, E.Simoen, A.Poyai, C.Claeys
- Journal Title
  
  Journal of Materials Science 14
  
  Pages: 451-454
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Damage coefficient in high-temperature particle- and g-irradiated silicon p-i-n diode2003
- Author(s)
  H.Ohyama, K.Takakura, K.Hayama, S.Kuboyama, Y.Deguchi, S.Matsuda, E.Simoen, C.Claeys
- Journal Title
  
  Appl.Phys.Lett. 82
  
  Pages: 296-298
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Induced lattice defects in InGaAs photodides by high-temperature electron irradiation2003
- Author(s)
  H.Ohyama, K.Kobayashi, J.Vanhellemont, E.Simoen, C.Claeys, K.Takakura, T.Hirao, S.Onoda
- Journal Title
  
  Physica B 340-342
  
  Pages: 337-340
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damage in Si photodiodes by high temperature irradiation2003
- Author(s)
  H.Ohyama, K.Takakura, E.Simoen, K.Kobayashi, C.Claeys, J.Uemura, T.Kishikawa
- Journal Title
  
  Physica E 16
  
  Pages: 533-538
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20-MeV protons2003
- Author(s)
  K.Takakura, H.Ohyama, A.Ueda, M.Nakabayashi, K.Hayama, K.Kobayashi, E.Simoen, K.Kobayashi, E.Simoen, A.Mercha, C.Claeys
- Journal Title
  
  Semicond.Sci.Technology 18
  
  Pages: 506-511
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Comparison of electron irradiation effect on thermal donors in CZ and oxygen doped FZ silicon2003
- Author(s)
  K.Takakura, H.Ohyama, T.Yoshida, H.Murakawa, J.M.Rafi, R.Job, A.Ulyashin, E.Simoen, C.Claeys
- Journal Title
  
  Physica B 340-342
  
  Pages: 1022-1025
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Irradiation temperature dependence of radiation damage in STI diodes2003
- Author(s)
  H.Ohyama, K.Hayama, K.Takakura, T.Miura, K.Shigaki, T.Jono, E.Simoen, A.Poyai, C.Claeys
- Journal Title
  
  Microelectronic Engineering 66
  
  Pages: 517-521
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation effects on n-MOSFETs fabricated in a BiCMOS process2002
- Author(s)
  H.Ohyama, E.Simoen, C.Claeys, K.Hayama, M.Nakabayashi, A.Ueda, K.Kobayashi
- Journal Title
  
  Nucl.Instrum.Methods B 186
  
  Pages: 419-423
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damage of polycrystalline Silicon films2002
- Author(s)
  H.Ohyama, M.Nakabayashi, E.Simoen, C.Claeys, K.Tanaka, K.Kobayashi
- Journal Title
  
  Nucl.Instrum.Methods B 186
  
  Pages: 176-180
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation
- Author(s)
  H.Ohyama, K.Takakura, T.Kudo 他
- Journal Title
  
  Physica B (掲載予定)(to be published)
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] Effect of deep levels and interface states on the lifetime control of trench-IGBTs by electron irradiation
- Author(s)
  K.Takakura, H.Ohyama, T.Kudo 他
- Journal Title
  
  Physica B (掲載予定)(to be published)
- Data Source
  KAKENHI-PROJECT-17560602
[Journal Article] Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature
- Author(s)
  K.Takakura, H.Ohyama, T.Kudo 他
- Journal Title
  
  Physica B (掲載予定)(to be published)
- Data Source
  KAKENHI-PROJECT-17560602
[Presentation] Gate induced floating body effects in SiON and HfO triple gate SOI FinFETs2007
- Author(s)
  J M. Rafi, H. Ohyama, et. al.
- Organizer
  EUROSOI 2007
- Place of Presentation
  Leuven Belgium
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560054
[Presentation] Performance degradation mechanism of irradiated GaAlAs LED2007
- Author(s)
  H. Ohyama, et. al.
- Organizer
  24th international conference on defects in semiconductors
- Place of Presentation
  Albuqueque, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560054
[Presentation] Effects of gate interface on performance degradation of irradiated SiC-MESFET2007
- Author(s)
  H. Ohyama, et. al.
- Organizer
  4th international conference on defects in semiconductors
- Place of Presentation
  Albuqueque, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560054
[Presentation] Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation2005
- Author(s)
  H.Ohyama, et. al.
- Organizer
  23th International Conference on Defects in Semiconductors ICDS-23
- Place of Presentation
  Awaji Island Japan
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560054

1. HAYAMA Kiyoteru (00238148)

# of Collaborated Projects: 8 results

# of Collaborated Products: 9 results
2. KUDOU Tomohiro (90225160)

# of Collaborated Projects: 6 results

# of Collaborated Products: 0 results
3. HAKATA Tetsuya (60237899)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
4. KAZUSADA Shigaki (50044722)

# of Collaborated Projects: 4 results

# of Collaborated Products: 3 results
5. TAKAKURA Kenichirou (70353349)

# of Collaborated Projects: 3 results

# of Collaborated Products: 19 results
6. TOKUYAMA Junya (40044698)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. YAMAGUCHI Toshiyuki (60191235)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. NAKANO Takumi (80217794)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. TOKORO Tetsuro (10155525)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. NAKAGAWA Shigeyasu (60155679)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. SIMOEN Eddy

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. CLAEYS Cor

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. EDDY Simoen

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. COR Claeys

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. SIMONE Eddy

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

OHYAMA Hidenori 大山 英典

Research Projects

Research Products

Co-Researchers

Radiation damage mechanism of advanced semiconductor materials and devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Irradiation temperature dependence of advanced semiconductor devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on radiation damages of semiconductor devices for high and low temperature

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Evaluation of Photovoltaic Performance by 40kW PV System Installed at National College of Technology and their Database

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Radiation damage of InGaAs device and its decrease method

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on high-performance of advanced semiconductorPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Radiation in advanced semiconductor devices and materialsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

High performance of SiGe devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Effects of gate interface on performance degradation of irradiated SiC-MESFET2007

Author(s)

Journal Title

Data Source

[Journal Article] Performance degradation mechanism of irradiated GaAlAs LED2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Degradation and their recovery behavior of irradiated GaAlAs LEDs2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Effects of gate interface on performance degradation of irradiated SiC-MESFET2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Performance degradation mechanism of irradiated GaAlAsLED2007

Author(s)

Journal Title

Data Source

[Journal Article] Radiation source dependence of device performance degradation for 4H-SiC MESFETs2006

Author(s)

Journal Title

Description

Data Source

OHYAMA Hidenori 大山英典