hanada takashi 花田貴

… Alternative Names

Researcher Number	80211481
Other IDs
External Links
Affiliation (Current)	2022: 東北大学, 金属材料研究所, 助教
Affiliation (based on the past Project Information) *help	2022: 東北大学, 金属材料研究所, 助教 2016 – 2020: 東北大学, 金属材料研究所, 助教 2007 – 2014: Tohoku University, 金属材料研究所, 助教 2004 – 2006: 東北大学, 金属材料研究所, 助手 2002: 東北大学, 金属材料研究所, 助手 … More
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Science and Engineering / Basic Section 29020:Thin film/surface and interfacial physical properties-related / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Applied materials science/Crystal engineering / Electronic materials/Electric materials / Electronic materials/Electric materials / Applied materials science/Crystal engineering / Crystal engineering
Keywords	Principal Investigator 窒化物半導体 / エピタキシャル成長 / 薄膜 / 金属ガラス / X線吸収微細構造 / 局所構造 / 軽元素 / 軟X線 / 金属物性 / 構造・機能材料 … More Except Principal Investigator 窒化物半導体 / MBE / ZnO / Bi系超伝導体 / 分子線エピタキシー / 低温成長 / 薄膜成長 / 光素子 / 有機金属気相成長 / ZnSe / ZnCdSe / GaN / 超伝導 / シリコン / 固体表面 / Si(100) / 表面水酸基 / 歪格子 / 超薄膜 / 分子線エピタキシー法 / 酸化物超伝導体 / 薄膜 / 結晶成長 / 表面構造 / 酸化物高温超伝導体 / 人工格子 / 有機FET / 有機機能デバイス / MIS構造 / アントラセン / 電気特性 / 有機薄膜 / ヘテロ界面反応制御 / AlNバッファー層 / ZnO基板 / RHEED / XPS / SIMS / AFM / 発光ダイオード / InGaN / MOVPE / 走査容量顕微鏡(SCaM) / 局所電気特性評価 / 原子間力顕微鏡(AFM) / 走査トンネル顕微鏡(STM) / MOS構造 / 電荷蓄積 / メモリー / Scanning Capacitance Microscopy / Nano-scale characterization of electrical properties / Atomic Force Microscopy / Scanning tunneling microscopy / MOS structures / Charge storage / Memory deivces / 半導体量子ドット / 短波長光エレクトロニクス / ナノ構造 / 半導体量子構造 / 励起子光物性 / 量子ドット / ワイドギャップ半導体 / 量子構造 / プラズマ援用MBE / CdSe / semiconductor quantum dot / short-wavelength optoelectronics / nano-structure / semiconducto quantum structure / exciton-based optical properties / エピタキシ成長 / サーファクタント / 酸化物半導体 / サーフアクタント / p型ドーピング / 窒素 / II-VI族化合物 / nitride semiconductors / epitaxial growth / surfactant / CrN緩衝層 / GaNエピタキシャル / HVPE / Thin film growth / Optical device / Nitide semiconductors / 極性 / 分極効果 / HEMT / 高電子移動度トランジスタ / 有機金属気相成長法 / N極性 / ヘテロ構造 Less

酸化ガリウム低指数面の清浄・吸着表面の原子構造と電気特性Principal Investigator
- Principal Investigator
  
  花田貴
- Project Period (FY)
  2022 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tohoku University
Polarity selection mechanism of III-nitride semiconductor epitaxial filmsPrincipal Investigator
- Principal Investigator
  
  Hanada Takashi
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Tohoku University
Crystal Growth of N-polar Nitride Semiconductor Heterostructures with Two-Dimensional Electron Gas
- Principal Investigator
  
  Matsuoka Takashi
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Tohoku University
Development of red-color emission based on nitride semiconductor for white lighing
- Principal Investigator
  
  MATSUOKA Takashi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Observation and control of heteroepitaxy on Si substrate by in situ X-ray diffractionPrincipal Investigator
- Principal Investigator
  
  HANADA Takashi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
大面積・超高輝度紫外LEDへの挑戦
- Principal Investigator
  
  河俊碩
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
ヘテロ界面制御によるZnO基板上への高品質GaNの低温成長
- Principal Investigator
  
  INHO Im
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Growth of GaN thin film and fabrication of vertical light emitting diode using CrN nano-crystalline buffer layerPrincipal Investigator
- Principal Investigator
  
  HANADA Takashi, ちょ明煥
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
周期分極反転した酸化亜鉛による励起子共鳴非線形波長変換Principal Investigator
- Principal Investigator
  
  花田貴
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Surfactant MBE of ZnO and its applications to the growh of p-type doping
- Principal Investigator
  
  YAO Takafumi
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
The development of AlGaN template using CrN buffer layer
- Principal Investigator
  
  MEOUNG-WHAN Cho
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
金属ガラス合金の軽元素周辺の局所構造と結合状態Principal Investigator
- Principal Investigator
  
  花田貴
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
有機半導体の分子線エピタキシとエレクトロニクス応用
- Principal Investigator
  
  YAO Takafumi
- Project Period (FY)
  2002
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Construction of wide gap semiconductor nano-Quantum Dots
- Principal Investigator
  
  YAO Takafumi
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (A).
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Development of nano-scale characterization technology for semicondutors and devices with scanning capacitance microscope
- Principal Investigator
  
  YAO Takafumi
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
酸化物超伝導体薄膜の原子層成長
- Principal Investigator
  
  川合真紀
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The Institute of Physical and Chemical Research
酸化物超伝導体薄膜の原子層成長
- Principal Investigator
  
  川合真紀
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The Institute of Physical and Chemical Research
固体表面反応を利用した酸化物超伝導薄膜原子層の段階的形成
- Principal Investigator
  
  川合眞紀
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
団体表面反応を利用した酸化物超伝導薄膜原子層の段階的形成
- Principal Investigator
  
  川合眞紀
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology

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All Journal Article Presentation Book

[Book] ZnO系の最新技術と応用2007
- Author(s)
  八百隆文, 花田貴等他21名
- Total Pages
  440
- Publisher
  シーエムシー出版
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360001
[Book] ZnO系の最新技術と応用2007
- Author(s)
  八百隆文, 花田貴, 等他21名
- Total Pages
  440
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Step-Flow Growth Model of N-polar GaN Metalorganic Vapor Phase Epitaxy2021
- Author(s)
  花田貴, 吉野将生, 山路晃広, 黒澤俊介, 鎌田圭, 大橋雄二, 佐藤浩樹, 豊田智史, 横田有為, 吉川彰
- Journal Title
  
  JJACG
  
  Volume: 48 Issue: 1 Pages: n/a
- DOI
  10.19009/jjacg.48-1-03
- NAID
  130008034934
- ISSN
  0385-6275, 2187-8366
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04933
[Journal Article] Thermodynamic model for metalorganic vapor-phase epitaxy of N-polar group-III nitrides in step-flow growth mode: Hydrogen, competitive adsorption, and configuration entropy2019
- Author(s)
  Hanada Takashi
- Journal Title
  
  Physical Review Materials
  
  Volume: 3
- DOI
  10.1103/physrevmaterials.3.103404
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04933
[Journal Article] Characterization of the ScAlMgO4 cleaving layer by X-ray crystal truncation rod scattering2018
- Author(s)
  Hanada Takashi、Tajiri Hiroo、Sakata Osami、Fukuda Tsuguo、Matsuoka Takashi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Pages: 205305-205305
- DOI
  10.1063/1.5031024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04933
[Journal Article] Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar (000-1) GaN/sapphire2014
- Author(s)
  T. Tanikawa, K. Shojiki, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 5S1 Pages: 05FL05-05FL05
- DOI
  10.7567/jjap.53.05fl05
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth2014
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 8 Pages: 085501-085501
- DOI
  10.7567/jjap.53.085501
- NAID
  210000144304
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-24560362
[Journal Article] Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-Incorporation Into InGaN Grown by Metalorganic Vapor Phase Epitaxy2014
- Author(s)
  J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka
- Journal Title
  
  J. Nanoscience and Nanotechnology
  
  Volume: 14 Pages: 6112-6115
- DOI
  10.1166/jnn.2014.8306
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Effect of c-plane Sapphire Substrate Miscut-angle on Indium Content of MOVPE-grown N-polar InGaN2014
- Author(s)
  K. Shojiki and R. Katayama(他6名)
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53(5S1) Issue: 5S1 Pages: 05FL07-05FL07
- DOI
  10.7567/jjap.53.05fl07
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Investigation of Indium Iincorporation into InGaN by Nitridation of Sapphire Substrate in MOVPE2013
- Author(s)
  J. H. Choi and R. Katayama(他4名)
- Journal Title
  
  phys. stat. sol. (c)
  
  Volume: 10(3) Pages: 417-420
- DOI
  10.1002/pssc.201200667
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Tilted Domain and Indium Content of InGaN Layer on m-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy2012
- Author(s)
  K. Shojiki and R. Katayama(他4名)
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Pages: 04DH01-04DH01
- DOI
  10.1143/jjap.51.04dh01
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Effect of Nitridation on Indium composition of InGaN Films2012
- Author(s)
  J. H. Choi, S. Kumar, S. Y. Ji, K. Shojiki, T. Hanada, R. Katayama and T. Matsuoka
- Journal Title
  
  Key. Eng. Mater.
  
  Volume: 508 Pages: 193-193
- DOI
  10.4028/www.scientific.net/kem.508.193
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009
- Author(s)
  S. W. Lee, J. S. Ha, Hyun-Jae Lee, Hyo-Jong Lee, H. Goto, T. Hanada, T. Goto, K. Fujii, M. W. Cho, and T. Yao
- Journal Title
  
  Appl. Phys. Lett 94
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560008
[Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009
- Author(s)
  S. W. Lee, J. S. Ha, H. J. Lee, H-J. Lee, H. Goto, T. Hanada, T. Goto, et.al.
- Journal Title
  
  Applied Physics Letters 94
  
  Pages: 82105-82105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560002
[Journal Article] Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices2007
- Author(s)
  SW.Lee, DC.Oh, H.Goto, JS.Ha, HJ.Lee, T.Hanada, MW.Cho, et al.
- Journal Title
  
  Physica Status Solidi C 4・1
  
  Pages: 37-40
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560002
[Journal Article] Analysis of the relation between leakage current and dislocations in GaN-based Light-emitting devices2007
- Author(s)
  SW.Lee, DC.0h, H Goto, JS Ha, HJ Lee, T Hanada, MW.Cho, SK.Hong, HY.Lee, SR.Cho, JW.Choi, JH.Choi, JH.Jang, JE.Shin, JS.Lee, T Yao
- Journal Title
  
  Physica Status Solidi C 4・1
  
  Pages: 37-40
- Data Source
  KAKENHI-PROJECT-17560002
[Journal Article] Electrical properties of ZnO/GaN heterostructures and photoresponsivity of ZnO layers.2006
- Author(s)
  D.C.Oh, T.Suzuki, H.Makino, T.Hanada, H.J.Ko, T.Yao
- Journal Title
  
  physica status solid 3(4)
  
  Pages: 946-951
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Structural properties of CrN buffers for GaN growth2006
- Author(s)
  Lee WH, Im IH, Minegishi T, Hanada T, Cho MW, Yao T, Oh DC, Han CS, Koo KW, Kim JJ, Sakata 0, Sumitani K, Cho SJ, Lee HY, Hong SK, Kim ST
- Journal Title
  
  JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 3
  
  Pages: 928-933
- Data Source
  KAKENHI-PROJECT-17560002
[Journal Article] 0rigin of forward leakage current in GaN-based light-emitting devices2006
- Author(s)
  Lee SW, Oh DC, Goto H, Ha JS, Lee HJ, Hanada T, Cho MW, Yao T, Hong SK, Lee HY, Cho SR, Choi JW, Choi JH, Jang JH, Shin JE, Lee JS
- Journal Title
  
  Applied Physics Letters 89
  
  Pages: 132117-132117
- Data Source
  KAKENHI-PROJECT-17560002
[Journal Article] Structural properties of CrN buffers for GaN growth2006
- Author(s)
  Lee.WH, Im.IH, Minegishi.T, Hanada.T, Cho MW, Yao T, et al.
- Journal Title
  
  JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 3
  
  Pages: 928-933
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560002
[Journal Article] Origin of forward leakage current in GaN-based light-emitting devices2006
- Author(s)
  Lee SW, Oh DC, Goto H, Ha JS, Lee HJ, Hanada T, Cho MW, Yao T, et al.
- Journal Title
  
  Applied Physics Letters 89
  
  Pages: 132117-132117
- NAID
  120002337930
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560002
[Journal Article] Electrical properties of ZnO/GaN heterostructures and Photoresponsivity of ZnO layers.2006
- Author(s)
  D.C.Oh, T.Suzuki, H.Makino, T.Hanada, H.J.Ko, T.Yao
- Journal Title
  
  physica status solid 3(4)
  
  Pages: 946-951
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Photoresponsivity of ZnO Schottky barrier diodes.2006
- Author(s)
  Oh DC, Suzuki T, Hanada T, et al.
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE ＆ TECHNOLOGY B 24(3)
  
  Pages: 1595-1598
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Structural variation of cubic and hexagonal MgxZn1-xO layers grown on MgO(111)/C-sapphire2005
- Author(s)
  Z.Vashaei, T.Minegishi, H.Suzuki, T.Hanada, MW.Cho, T.Yao, A.Setiawan
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS 98(5)
  
  Pages: 54911-54911
- NAID
  120001182191
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Control of crystal polarity of ZnO and GaN epitaxial layers by interfacial engineering2005
- Author(s)
  KW.Jang, T.Minegishi, T.Suzuki, SK/Hong, DC.Oh, T.Hanada
- Journal Title
  
  JOURNAL OF CERAMIC PROCESSING RESEARCH 6(2)
  
  Pages: 167-183
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Capacitance-voltage Characteristics of ZnO/GaN2005
- Author(s)
  DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, T.Yao
- Journal Title
  
  APPLIED PHYSICS LETTERS 87(16)
  
  Pages: 162104-162104
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Electron-trap centers in ZnO layers grown by molecular-beam epitaxy2005
- Author(s)
  DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, MW.Cho
- Journal Title
  
  APPLIED PHYSICS LETTERS 86(3)
  
  Pages: 329090-329090
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Structural variation of cubic and hexagonal MgxZu1-x0 layers grown on MgO(111) /c-sapphire2005
- Author(s)
  Z.Vashaei, T.Minegishi, H.Suzuki, T.Hanada, MW.Cho
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS 98(5)
  
  Pages: 54911-54911
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Control of crystal polarity of ZnO and GaN epitaxial layers by interfacial engineering2005
- Author(s)
  KW.Jang, T.Minegishi, T.Suzuki, SK/Hong, DC.Oh, T.Hanada, MW.Cho, T.Yao
- Journal Title
  
  JOURNAL OF CERAMIC PRGCESSING RESEARCH 6(2)
  
  Pages: 167-183
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Electron-trap centers in ZnO layers grown by molecular-beam epitaxy2005
- Author(s)
  DC.Oh, T.Suzuki, JJ.Kim, N.Makino, T.Hanada, MW.Cho, T.Yao
- Journal Title
  
  APPLIED PHYSICS LETTERS 86(3)
  
  Pages: 329090-329090
- NAID
  120001182186
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy2005
- Author(s)
  DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, JS.So
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE＆TECHNOLOGY B23(3)
  
  Pages: 1281-1285
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy2005
- Author(s)
  DC.Oh, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, HJ.Ko
- Journal Title
  
  APPLIED PHYSICS LETTERS 86(4)
  
  Pages: 42110-42110
- NAID
  120001182187
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Capacitance-voltage Characteristics of ZnO/GaN2005
- Author(s)
  DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, T.Yao, HJ.KO
- Journal Title
  
  APPLIED PHYSICS LETTERS 87(16)
  
  Pages: 162104-162104
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy2005
- Author(s)
  DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, JS.Song, HJ.Ko
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE&TECHNOLOGY B23(3)
  
  Pages: 1281-1285
- Data Source
  KAKENHI-PROJECT-17360001
[Journal Article] Characteristics of Schottky contacts to ZnO : N layers grown by molecular- beam epitaxy2005
- Author(s)
  DC.Oh, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, HJ.Ko
- Journal Title
  
  APPLIED PHYSICS LETTERS 86(4)
  
  Pages: 42110-42110
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360001
[Presentation] 微傾斜面または螺旋転位にともなうステップフロー型N極性GaN有機金属気相成長モデル2020
- Author(s)
  花田貴, 吉野将生, 山路晃広, 黒澤俊介, 鎌田圭, 大橋雄二, 佐藤浩樹, 豊田智史, 横田有為, 吉川彰
- Organizer
  第49回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-18K04933
[Presentation] Effect of indium surfactant on MOVPE growth of N-polar GaN2014
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Iwabuchi, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  8th Intern. Symp. Medical, Bio- and Nano-Electronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Effect of c-plane Sapphire Substrate Miscut-angle on Indium Content of MOVPE-grown N-polar InGaN2013
- Author(s)
  K. Shojiki, J. H. Choi, H. Shindo, T. Kimura, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Improvement of surface morphology in (000-1) GaN/Sapphire grown by MOVPE with indium surfactant2013
- Author(s)
  T. Tanikawa, T. Aisaka, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada, and T. Matsuoka
- Organizer
  Conference on LED and its industrial application '13 (LEDIA '13)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] In situ X-ray Diffraction during Reactive Deposition Epitaxy of FeSi2 on Si(001)2013
- Author(s)
  T. Hanada, H. Tajiri, O. Sakata, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Influence of Mg-Doping on the Surface Morphology of (000-1) GaN/Sapphire Grown by Metalorganic Vapor Phase Epitaxy2013
- Author(s)
  T. Tanikawa, T. Aisaka, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  10th International Conference on Nitride Semiconductors(ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] MOVPE 成長N 極性InGaN におけるIn 組成のc 面サファイア基板微傾斜角依存性2013
- Author(s)
  正直花奈子，崔正焄，進藤裕文，木村健司, 谷川智之, 花田貴，片山竜二，松岡隆志
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Improvement of Surface Morphology of N-polar GaN by Introducing Indium Surfactant during MOVPE Growth2013
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Investigation and Suppression of Metastable-phase Inclusion in MOVPE-grown -c-plane InGaN/GaN Multiple Quantum Wells2013
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi1, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  KINKEN-WAKATE 2013 10th Materials Science School for Young Scientists
- Place of Presentation
  Sendai Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Evaluation and Solution of Metastable-Phase Inclusion in MOVPE-grown -c-plane InGaN/GaN Multiple Quantum Wells2013
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
- Organizer
  10th International Conference on Nitride Semiconductors(ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Improvement of Surface Morphology in (000-1) GaN/Sapphire Grown by MOVPE with Indium Surfactant2013
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada, and T. Matsuoka
- Organizer
  Intern. Symp. Comp. Semcond. (ISCS2013)
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性2012
- Author(s)
  正直花奈子, 崔正焄, 進藤裕文, 木村健司, 谷川智之, 花田貴, 片山竜ニ,　松岡隆志
- Organizer
  第67回応用物理学会東北支部学術講演会
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] MOVPE成長(000-1) GaNのステップフロー成長の促進2012
- Author(s)
  逢坂崇, 正直花奈子, 岩渕拓也, 木村健司, 谷川智之, 花田貴, 片山竜二, 松岡隆志
- Organizer
  第67回応用物理学会東北支部学術講演会
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Study of In-composition of faceted InGaN on m-plane GaN substrate using high-resolution microbeam XRD2012
- Author(s)
  J-H Choi, K. Shojiki, T. Shimada, T. Tanikawa, T. Hanada, R. Katayama, Y. Imai, S. Kimura, and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-incorporation into InGaN Grown by MOVPE2012
- Author(s)
  J.H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  International Conference on Nano Science and Nano Technology
- Place of Presentation
  Gwangju, Korea
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] BL13XUの超高真空X線回折装置による半導体薄膜に関する最近の成果2011
- Author(s)
  花田貴
- Organizer
  SPring-8利用者懇談会表界面・薄膜ナノ構造研究会
- Place of Presentation
  大阪
- Year and Date
  2011-03-11
- Data Source
  KAKENHI-PROJECT-21560007
[Presentation] Reactive Deposition Epitaxy of α-FeSi2 Islands on Si(001)Observed by in situ X-Ray Diffraction2011
- Author(s)
  T. Hanada, H. Tajiri, O. Sakata, and T. Matsuoka
- Organizer
  The Seventh International Conference on Low Dimensional Structures and Devices(LDSD2011)
- Place of Presentation
  Telchac, Mexico
- Year and Date
  2011-05-26
- Data Source
  KAKENHI-PROJECT-21560007
[Presentation] Reactive Deposition Epitaxy of β-FeSi_2 Islands on Si(001) Observed by in situ X-Ray Diffraction2011
- Author(s)
  花田貴
- Organizer
  The Seventh International Conference on Low Dimensional Structures and Devices (LDSD2011)
- Place of Presentation
  メキシコ、テルチャク
- Year and Date
  2011-05-26
- Data Source
  KAKENHI-PROJECT-21560007
[Presentation] β-FeSi_2/Si(001)熱反応堆積成長のその場X線回折:α-FeSi_2の成長と消滅2009
- Author(s)
  花田貴
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21560007
[Presentation] β-FeSi2/Si(001)熱反応堆積成長のその場X線回折: α-FeSi2の成長と消滅2009
- Author(s)
  花田貴、田尻寛男、坂田修身、松岡隆志
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560007
[Presentation] Crystallo -graphic Investigation of Nitride C- Sapphire Substrate by Grazing Incidence X-ray Diffraction and Transmission Electron Microscopy2008
- Author(s)
  H. J. Lee, J. S. Ha, S. K. Hong, S. W. Lee, H. J. Lee, S. H. Lee, T. Minegishi, T. Hanada, M. W. Cho, and T. Yao
- Organizer
  The International Conference on the Textures of Materials
- Place of Presentation
  Pittsburgh, USA
- Data Source
  KAKENHI-PROJECT-19560008
[Presentation] Emission Wavelength Extension of Light Emitting Diode Using MOVPE-Grown N-Polar (000-1) InGaN
- Author(s)
  K. Shojiki, J.H. Choi, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Suppression of Metastable-Phase Inclusion in MOVPE-Grown N-Polar (000-1) InGaN/GaN Multiple Quantum Wells
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  Conference on LED and Its Industrial Application (LEDIA '14)
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Suppression of metastable-phase inclusion in MOVPE-grown N-polar (000-1) InGaN/GaN multiple quantum wells
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  第33回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺（静岡県伊豆市）
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] サファイア基板上MOVPE成長N極性面(000-1)InGaNを用いた赤・緑・青色発光ダイオードの作製
- Author(s)
  正直花奈子，崔正焄，谷川智之，窪谷茂幸，花田貴，片山竜二，松岡隆志
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] MOVPE成長N極性(0001)InGaN多重量子井戸構造と発光ダイオードの構造・光学特性
- Author(s)
  正直花奈子，崔正焄，谷川智之，窪谷茂幸，花田貴，片山竜二，松岡隆志
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Control of GaN growth orientation by MOVPE
- Author(s)
  T. Tanikawa, K. Shojiki, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, T. Matsuoka, Y. Honda, H. Amano
- Organizer
  2nd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-2)
- Place of Presentation
  東北大学片平キャンパス（宮城県仙台市）
- Year and Date
  2014-10-29 – 2014-10-31
- Invited
- Data Source
  KAKENHI-PROJECT-24560362

1. YAO Takafumi (60230182)

# of Collaborated Projects: 5 results

# of Collaborated Products: 13 results
2. MEOUNG-WHAN Cho (00361171)

# of Collaborated Projects: 4 results

# of Collaborated Products: 17 results
3. 川合眞紀 (70177640)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
4. 関根理香 (50211321)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
5. INHO Im (00400408)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. MAKINO Hisao (40302210)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. MATSUOKA Takashi (40393730)

# of Collaborated Projects: 2 results

# of Collaborated Products: 27 results
8. KOO Bon-heun (00312645)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 吉信淳 (50202403)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 張志豪 (60333879)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 岡田修司 (30250848)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 河俊碩 (90444017)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. るーふぁん (70281988)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 朱自強 (10243601)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 谷川智之 (90633537)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. HAYASHI Tsukasa

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. グラビアローレント

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. クルツエリザベス

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 片山竜二

# of Collaborated Projects: 0 results

# of Collaborated Products: 6 results

hanada takashi 花田 貴

花田 貴 ハナダ タカシ

Hanada Takashi 花田 貴

HANADA Takashi 花田 貴

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酸化ガリウム低指数面の清浄・吸着表面の原子構造と電気特性Principal Investigator

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Polarity selection mechanism of III-nitride semiconductor epitaxial filmsPrincipal Investigator

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Observation and control of heteroepitaxy on Si substrate by in situ X-ray diffractionPrincipal Investigator

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Growth of GaN thin film and fabrication of vertical light emitting diode using CrN nano-crystalline buffer layerPrincipal Investigator

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周期分極反転した酸化亜鉛による励起子共鳴非線形波長変換Principal Investigator

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金属ガラス合金の軽元素周辺の局所構造と結合状態Principal Investigator

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hanada takashi 花田貴

花田貴ハナダタカシ

Hanada Takashi 花田貴

HANADA Takashi 花田貴