MAEMOTO TOSHIHIKO 前元利彦

… Alternative Names

前元利彦マエモトトシヒコ

MAEMOTO Toshihiko 前元利彦

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Researcher Number	80280072
Other IDs	https://orcid.org/0000-0001-6047-832X
Affiliation (Current)	2024: 大阪工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2021 – 2022: 大阪工業大学, 工学部, 教授 2016 – 2018: 大阪工業大学, 工学部, 教授 2010 – 2013: 大阪工業大学, 工学部, 准教授 2007 – 2008: Osaka Institute of Technology, Faculty of Engineering, Associate Professor 2005 – 2006: 大阪工業大学, 工学部, 助教授 2001: 大阪工業大学短期大学部, 電気工学科, 助教授 1998 – 2000: 大阪工業大学短期大学部, その他部局等, 講師
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Measurement engineering / Electron device/Electronic equipment / Microdevices/Nanodevices
Keywords	Principal Investigator InAs / 磁気抵抗 / InAsヘテロ構造 / 酸化亜鉛 / エナジーハーベスティング / レクテナ / 酸化物半導体 / セルフスイッチングダイオード / 整流特性 / トランジスタ … More / High-k / 相互コンダクタンス / 量子細線 / AlGaSb / ワイドバンドギャップ酸化物半導体 / ワイドバンドギャップ / フレキシブルダイオード / フレキシブルデバイス / 自己整流型ダイオード / 環境発電 / 薄膜トランジスタ / セルフスイッチングダイオード / フレキシブル / RFID / 透明ダイオード / High-kゲート絶縁膜 / 高速・低消費電力 / High-kゲート / III-V MOSFET / ヘテロ接合トランジスタ / 高速・低消費電力素子 / 高誘電率ゲート / インジウムヒ素 / 半導体ヘテロ構造 / MOSFET / 化合物半導体 / 量子ポイントコンタクト / 量子ナノ構造 / テラヘルツ波 / AIGaSbヘテロ構造 / 回路応用 / 3分岐構造 / 整流効果 / AlGaSb ヘテロ構造 / 整流デバイス / バリスティック / AlSbヘテロ構造 / バリスティック整流素子 / ゲートリーク電流 / 高誘電率ゲート薄膜 / 高速トランジスタ / AlSb系ヘテロ構造 / 量子カオス / 電子波干渉効果 / 量子ドット / 電子移動度 / 選択ウエットエッチング / 表面超格子 / 電子波干渉 / 量子効果デバイス / 量子細線トランジスタ … More Except Principal Investigator AlGaSb / InAs / ballistic / curvature / negative resistance / heterostructure / diode / sub-terahertz / terahertz / 二乗検波 / lnAs / 量子井戸構造 / AlSb / バリスティック / 検出感度 / 負性抵抗 / AIGaSb / ヘテロ構造 / ダイオード / サブテラヘルツ / テラヘルツ / ギガヘルツ / 遮断周波数 / マイクロ波 / 酸化亜鉛 / 自己スイッチングダイオード / ３分岐接合 / ゲート制御 / 非線形 / ナノデバイス / 3分岐接合 / 半導体ナノワイヤ Less

Development of a harmless flexible diode to humans using by oxide semiconductors and application of rectenna circuitsPrincipal Investigator
- Principal Investigator
  
  前元利彦
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Osaka Institute of Technology
Development of transparent diodes using oxide semiconductors and these applications to energy harvesting circuitsPrincipal Investigator
- Principal Investigator
  
  MAEMOTO TOSHIHIKO
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
Fabrication of new structure transistors using III-V Semiconductors/High-k materials on Si substratesPrincipal Investigator
- Principal Investigator
  
  MAEMOTO TOSHIHIKO
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
Study on the nonlinear characteristics in semiconductor nanowire three branch junction and its control
- Principal Investigator
  
  KASAI Seiya
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Hokkaido University
Development of ZnO-based transistors operated in gigahertzfrequency range
- Principal Investigator
  
  SASA Shigehiko
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
High-sensitive Terahertz technology using semiconductor quantum nanostructuresPrincipal Investigator
- Principal Investigator
  
  MAEMOTO Toshihiko
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
Fabrication of terahertz detectors based on InAs/AISb/AlGaSb/GaSb heterostructures
- Principal Investigator
  
  INOUE Masataka
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Measurement engineering
- Research Institution
  Osaka Institute of Technology
高誘電率(High-k)ゲートを用いたInAs/AISb系高速トランジスタの開発Principal Investigator
- Principal Investigator
  
  前元利彦
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
高移動度InAs系ヘテロ構造を用いた極微構造の作製と新機能デバイス探索Principal Investigator
- Principal Investigator
  
  前元利彦
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka Institute of Technology Junior College
InAsヘテロ構造を用いた量子効果トランジスタの開発と高温動作Principal Investigator
- Principal Investigator
  
  前元利彦
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka Institute of Technology Junior College

[Journal Article] Repeated bending durability evaluation of ZnO and Al-doped ZnO thin films grown on cyclo-olefin polymer for flexible oxide device applications2022
- Author(s)
  Kazuyori Oura, Toshihiro Kumatani, Hideo Wada, Masatoshi Koyama, Toshihiko Maemoto, Shigehiko Sasa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 10 Pages: 101001-101001
- DOI
  10.35848/1347-4065/ac9024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04506, KAKENHI-PROJECT-21K04203, KAKENHI-PROJECT-21K04204
[Journal Article] Low-Temperature Formation of Indium Oxide Thin-Film using Excimer Light by Solution Process and Characterization of Thin-Film Transistor Characteristics2022
- Author(s)
  OURA Kazuyori、WADA Hideo、KOYAMA Masatoshi、MAEMOTO Toshihiko、SASA Shigehiko、TAKEZOE Noritaka、SHIMIZU Akihiro、ITO Hiroyasu
- Journal Title
  
  Vacuum and Surface Science
  
  Volume: 65 Issue: 3 Pages: 139-144
- DOI
  10.1380/vss.65.139
- ISSN
  2433-5835, 2433-5843
- Year and Date
  2022-03-10
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04506, KAKENHI-PROJECT-21K04203, KAKENHI-PROJECT-21K04204
[Journal Article] Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structures2021
- Author(s)
  Oura Kazuyori、Wada Hideo、Koyama Masatoshi、Maemoto Toshihiko、Sasa Shigehiko
- Journal Title
  
  Journal of Information Display
  
  Volume: 23 Issue: 1 Pages: 105-113
- DOI
  10.1080/15980316.2021.2011443
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04506, KAKENHI-PROJECT-21K04203, KAKENHI-PROJECT-21K04204
[Journal Article] Bending Durability of Zinc Oxide Thin-films Transistors Formed on Flexible Substrates2018
- Author(s)
  永山幸希，松田宗平，カルトシュタインオリバー，大浦紀頼，小山政俊，前元利彦，佐々誠彦
- Journal Title
  
  Vacuum and Surface Science
  
  Volume: 61 Issue: 5 Pages: 274-279
- DOI
  10.1380/vss.61.274
- NAID
  130006733712
- ISSN
  2433-5835, 2433-5843
- Year and Date
  2018-05-10
- Language
  Japanese
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K06472, KAKENHI-PROJECT-16K06327
[Journal Article] Effects of He plasma treatment on zinc oxide thin film transistors2017
- Author(s)
  Shotaro Shinya, Toyokazu Kaneko, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa
- Journal Title
  
  IEEE Xplore
  
  Volume: - Pages: 66-67
- DOI
  10.1109/imfedk.2017.7998045
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06327, KAKENHI-PROJECT-17K06472
[Journal Article] 溶液法を用いた酸化亜鉛系薄膜トランジスタの作製および熱ナノインプリント法による酸化物薄膜のダイレクトパターニング2017
- Author(s)
  木村史哉，アブドゥラハナキ，孫屹，佐々木祥太，永山幸希，小山政俊，前元利彦，佐々誠彦
- Journal Title
  
  電子情報通信学会信学技報
  
  Volume: ED2016-132, SDM2016-149 Pages: 13-16
- Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-16K06327
[Journal Article] Study for Enhancement of Terahertz Radiation Using GaSb/InAs Heterostructures2017
- Author(s)
  S. Sasa, Y. Kinoshita, M. Tatsumi, M. Koyama, T. Maemoto, S. Hamauchi, I. Kawayama, and M. Tonouchi
- Journal Title
  
  IOP Conf. Series: Journal of Physics: Conf. Series
  
  Volume: 906 Pages: 012015-012015
- DOI
  10.1088/1742-6596/906/1/012015
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06326, KAKENHI-PROJECT-16K06327
[Journal Article] A reflection layer for enhanced THz radiation from InAs thin films2012
- Author(s)
  K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, and M. Tonouchi
- Journal Title
  
  Proceedings of the 2012 International Meeting for Future of Electron Devices
  
  Volume: 1 Pages: 116-117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] 高性能酸化亜鉛系FETと酸化物デバイス応用の広がり2012
- Author(s)
  佐々誠彦，矢野満明，前元利彦，小池一歩，尾形健一
- Journal Title
  
  電子情報通信学会誌
  
  Volume: 95-4 Pages: 289-293
- NAID
  110009437460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] 室温プロセスによるフレキシブル基板上酸化亜鉛薄膜トランジスタの作製2012
- Author(s)
  木村祐太，日垣友宏，前元利彦，佐々誠彦
- Journal Title
  
  材料
  
  Volume: 61-9 Pages: 760-765
- NAID
  130002084924
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Rectification effects in ZnO-based transparent self-switching nano-diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, and M. Inoue
- Journal Title
  
  Proceedings of the 2012 International Meeting for Future of Electron Devices
  
  Volume: 1 Pages: 114-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] 室温プロセスによるフレキシブル基板上酸化亜鉛薄膜トランジスタの作製2012
- Author(s)
  木村祐太, 日垣友宏, 前元利彦, 佐々誠彦
- Journal Title
  
  材料
  
  Volume: 61巻9号 Pages: 760-765
- NAID
  130002084924
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] 高性能酸化亜鉛系FETと酸化物デバイス応用の広がり2012
- Author(s)
  佐々誠彦, 矢野満明, 前元利彦, 小池一歩, 尾形健一
- Journal Title
  
  電子情報通信学会誌
  
  Volume: 95巻4号 Pages: 289-293
- NAID
  110009437460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Rectification effects in ZnO-based transparent self-switching nano -diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proceedings of the 2012 International Meeting for Future of Electron Devices Kansai
  
  Volume: 1巻 Pages: 114-115
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] A reflection layer for enhanced THz radiation from InAs thin films2012
- Author(s)
  K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, M. Tonouchi
- Journal Title
  
  Proceedings of the 2012 International Meeting for Future of Electron Devices, Kansai
  
  Volume: 1巻 Pages: 116-117
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] 高性能酸化亜鉛系FETと酸化物デバイス応用の広がり2012
- Author(s)
  佐々誠彦,矢野満明,前元利彦,小池一歩,尾形健一
- Journal Title
  
  電子情報通信学会誌
  
  Volume: Vol.95-4 Pages: 289-293
- NAID
  110009437460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Effects of post annealing on IZO thin-film transistor characteristics2012
- Author(s)
  R. Morita, T. Maemoto, and S. Sasa
- Journal Title
  
  2012 Int. Mtg. for Future of Electron Devices Kansai (IMFEDK)
  
  Pages: 118-119
- DOI
  10.1109/imfedk.2012.6218610
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] 高性能酸化亜鉛系 FET と酸化物デバイス応用の広がり2012
- Author(s)
  佐々誠彦，矢野満明，前元利彦，小池一歩，尾形健一
- Journal Title
  
  電子情報通信学会誌
  
  Volume: 95 Pages: 289-293
- NAID
  110009437460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] 酸化亜鉛トランジスターの開発とバイオセンサー応用2011
- Author(s)
  矢野満明, 小池一歩, 佐々誠彦, 前元利彦, 井上正崇
- Journal Title
  
  材料
  
  Volume: 60 Pages: 447-456
- NAID
  130000861066
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Development of ZnO Transistors and Their Application to Bio-Sensors2011
- Author(s)
  矢野満明, 小池一歩, 佐々誠彦, 前元利彦, 井上正崇
- Journal Title
  
  Journal of the Society of Materials Science, Japan
  
  Volume: 60 Issue: 5 Pages: 447-456
- DOI
  10.2472/jsms.60.447
- NAID
  130000861066
- ISSN
  0514-5163, 1880-7488
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310084, KAKENHI-PROJECT-22560353, KAKENHI-PROJECT-22760306
[Journal Article] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulators2011
- Author(s)
  T. Kiso, H. Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proceedings of the 2011 International Meeting for Future of Electron Devices
  
  Volume: 1 Pages: 88-89
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Flexible Zinc Oxide Thin-Film Transistors using Oxide buffer layers on Polyethylene Napthalate Substrates2011
- Author(s)
  T.Higaki, T.Tachibana, Y.Kimura, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proceedings of the 2011 International Meeting for Future of Electron Devices
  
  Pages: 92-93
- DOI
  10.1109/imfedk.2011.5944860
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310084, KAKENHI-PROJECT-22560353
[Journal Article] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulators2011
- Author(s)
  T.Kiso, H.Yoshikawa, Y.Ishibashi, K.Nishisaka, K.Ogata, T.Maemoto
- Journal Title
  
  Proceedings of the 2011 International Meeting for Future of Electron Devices
  
  Pages: 88-89
- DOI
  10.1109/imfedk.2011.5944863
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310084
[Journal Article] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulator2011
- Author(s)
  T. Kiso, H.Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proceedings of the 2011 International Meeting for Future of Electron Devices, Kansai
  
  Volume: 1巻 Pages: 88-89
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Flexible zinc oxide thin-film transistors using oxide buffer layers on polyethylene napthalate Substrates2011
- Author(s)
  T.Higaki, T.Tachibana, Y.Kimura, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc.of International Meeting for Future of Electron Devices
  
  Pages: 92-93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Ballistic three-terminal devices based on T-branch junctions in InAs/AlGaSb heterostructures2010
- Author(s)
  H.Nishioka, Y.Ishibashi, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proceedings of the 2010 International Meeting for Future of Electron Devices
  
  Pages: 136-137
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310084
[Journal Article] Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields2009
- Author(s)
  M. Kovama, K. Fujiwara, N. Amano, T. Maemoto, S. Sasa, M. lnoue
- Journal Title
  
  phys. stat. sol. (c) (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear electron transport properties in InAs/AIGaSb three-terminal ballistic junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, K. Fujiwara, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Technical report of IEICE. Vol.107, No.473-474
  
  Pages: 29-32
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties in InAs/AlGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T.Maemoto, S. Sasa, and M. Inoue,
- Journal Title
  
  J. of Physics: Conf. Ser. 109 012023
  
  Pages: 1-3
- NAID
  110006613703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear Electron "Transport Properties and Rectification Effects in InAs/AlGaSb Ballistic Devices"2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto,S. Sasa, and M. Inoue
- Journal Title
  
  phys. Stat. sol. c 5
  
  Pages: 107-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] InAs/AlGaSb HEMTs with Al_2O_3 and HfO_2 Gate Insulators2008
- Author(s)
  K. Fuiiwara, N, Amano, M. Koyama, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proc. of the 2008 International Meeting for Future of Electron Devices, Kansai
  
  Pages: 73-74
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions2008
- Author(s)
  M Koyama, T Inoue, N Amano, T Maemoto, S Sasa and M.Inoue
- Journal Title
  
  Journal of Phys 109
  
  Pages: 120231-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties in InAs/AIGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M.Koyama, T.Inoue, N.Amano, T.Maemoto, S.Sasa and M.Inoue
- Journal Title
  
  J.of Physics:Conf.Ser. 109
  
  Pages: 12023-12026
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties in InAs/AlGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  J. of Physics : Conf. Ser. 109
  
  Pages: 12023-12023
- NAID
  110006613703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear Electron Transport Properties and Rectification Effects in lnAsIAlGaSb Ballistic Devices2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Phys. Stat. Sol.(c) 5
  
  Pages: 107-110
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties and Rectification Effects in InAs/AIGaSb Ballistic Devices2008
- Author(s)
  M.Koyama, T.Inoue, N.Amano, T.Maemoto, S.Sasa and M.Inoue
- Journal Title
  
  Phys.Stat.Sol.(c) 5
  
  Pages: 107-110
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] InAs/AlGaSb HEMTs with Al_2O_3 and HfO_<2 >Gate Insulators2008
- Author(s)
  K. Fujiwara, N, Amano, M. Koyama, T.Maemoto, S. Sasa, and M. Inoue,
- Journal Title
  
  Proc. Of the 2008 International Meeting for Future of Electron Devices, Kansai c
  
  Pages: 73-74
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear Electron Transport Properties in lnAs/AlGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  J. of Physics: Conf. Ser. 109
  
  Pages: 12023-12026
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties and Rectification Effects in InAs/AIGaSb Ballistic Devices2008
- Author(s)
  M. Kovama, T. lnoue, N. Amano, T. Maemoto, S. Sasa, M. lnoue
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 107-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Field characteristjcs of eiectron mobility and velocity in lnAs/AlGaSb HFETs with high-kgate insulators2007
- Author(s)
  T.Maemoto, M.Koyama, H.Takahashi, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 1391-1392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Ballistic rectification effects in lnAs/AlGaSb nanostructures2007
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  AlP conference proceeding 893
  
  Pages: 577-578
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Investigation of Sb-Based Diode Structures for Detecting Subterahertz Waves2007
- Author(s)
  T. lnoue, N. Amano, M. Koyama, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Memoirs of the Osaka Inst. of Tech, Ser, A 52
  
  Pages: 25-30
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Field characteristics of electron mobility and veloclty in InAs/AlGaSb HFETs with high-kgate insulators2007
- Author(s)
  T.Maemoto, M.Koyama, H.Takahashi, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 1391-1392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Ballistic rectification effects in InAs/AlGaSb nanostructures2007
- Author(s)
  M.Koyama, H.Takahashi, T.Maemoto, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 577-578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Ballistic rectification effects in InAs/AIGaSb nanostructures2007
- Author(s)
  M.Koyama, H.Takahashi, T.Maemoto, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 577-578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Field characteristics of electron mobility and velocity in InAs/AIGaSb HFETs with high-k gate insulators2007
- Author(s)
  T. Maemoto, M. Koyama, H. Takahashi, S. Sasa, M. Inoue
- Journal Title
  
  AlP conference proceeding 893
  
  Pages: 1391-1392
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2007
- Author(s)
  H. Takahashi, T. lnoue, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Memoirs of the Osaka Inst. of Tech, Ser. A 51
  
  Pages: 15-19
- NAID
  110006162463
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Ballistic transport and rectification effects in lnAs/AlGaSb mesoscopic stricture2007
- Author(s)
  M. Koyama, H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Technical report of IEICE. Vol.106, No.520-521
  
  Pages: 67-71
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertzwaves2007
- Author(s)
  H.Takahashi, T.Inoue, T.Maemoto, S.Sasa and M.Inoue
- Journal Title
  
  Proc. of the 2007 International Meeting for Future of Electron Devices 5
  
  Pages: 81-82
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2006
- Author(s)
  H.Takahashi, T.Inoue, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Memories of the Osaka Institute of Technology,Series A Vol.51
  
  Pages: 15-19
- NAID
  110006162463
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear electron transport properties in InAs/AIGaSb ballistic rectifiers2006
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proc. of Int. Mtg. on Future Electron Devices Kansai 2006
  
  Pages: 85-86
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2006
- Author(s)
  H.Takahashi, T.Inoue, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Memories of the Osaka Institute of Technology, Series A Vol. 51
  
  Pages: 15-19
- NAID
  110006162463
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Nonlinear electron Transport properties in InAs/AlGaSb Ballistic Rectifiers2006
- Author(s)
  M.Koyama, H.Takahashi, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc. of the 2006 International Meeting for Future of Electron Devices, Kansai
  
  Pages: 85-86
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Electron transport in InAs/AlGaSb ballistic rectifiers2006
- Author(s)
  T.Maemoto, M.Koyama, M.Furukawa, H.Takahashi, S.Sasa, M.Inoue
- Journal Title
  
  Journal of Physics Conference Series Vol. 38
  
  Pages: 112-115
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Fabrication and Characterization of InAs Mesoscopic Devices2006
- Author(s)
  M.Koyama, M.Furukawa, H.Ishii, M.Nakai, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Springer Proceedings in Physics Vol.110
  
  Pages: 7-10
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Electron transport in InAs/AlGaSb ballistic rectifier2006
- Author(s)
  T.Maemoto, M.Koyama, A.Nakashima, M.Nakai, S.Sasa, M.Inoue
- Journal Title
  
  Journal of Physics (To be published)
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Fabrication and Characterization of InAs Mesoscopic Devices2006
- Author(s)
  M.Koyama, M.Furukawa, H.Ishii, M.Nakai, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Springer Proceedings in Physics Vol. 110
  
  Pages: 7-10
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Electron transport in InAs field effect and mesoscopic devices2006
- Author(s)
  M.Koyama, M.Furukawa, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc. of 12th Int. Conf. on Narrow Gap Semicond., Inst. Phys. Conf. Ser. Vol. 187
  
  Pages: 445-449
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Electron transport in InAs field effect and mesoscopic devices2006
- Author(s)
  M.Koyama, M.Furukawa, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc.of 12th Int.Conf.on Narrow Gap Semicond.,Inst.Phys.Conf.Ser. Vol.187
  
  Pages: 445-449
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of InAs mesoscopic devices2006
- Author(s)
  M.Koyama, M.Furukawa, H.Ishii, M.Nakai, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Institute of Physics (IOP) Conference Series (Springer Proceedings in Physics Series) (To be published)
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Structural and optical properties of ZnMgO thin films grown by pulsed laser deposition using ZnO-MgO multiple targets2006
- Author(s)
  T.Maemoto, N.Ichiba, H.Ishii, S.Sasa, M.Inoue
- Journal Title
  
  Journal of Physics (To be published)
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Electron transport in InAs/AlGaSb ballistic rectifiers2006
- Author(s)
  T.Maemoto, M.Koyama, M.Furukawa, H.Takahashi, S.Sasa, M.Inoue
- Journal Title
  
  Journal of Physics Conference Series Vol.38
  
  Pages: 112-115
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear electron Transport properties in InAs/AlGaSb Ballistic Rectifiers2006
- Author(s)
  M.Koyama, H.Takahashi, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc. of the 2006 International Meeting for Future of Electron Devices,Kansai
  
  Pages: 85-86
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2006
- Author(s)
  H. Takahashi, T. lnoue, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Technical report of IEICE. Vol.106, No.403
  
  Pages: 19-22
- NAID
  110006162463
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Propagation of electron waves in InAs/AlGaSb2005
- Author(s)
  T.Maemoto, M.Koyama, A.Nakashima, M.Nakai, S.Sasa, M.Inoue
- Journal Title
  
  AIP Conference Proceedings 772
  
  Pages: 817-818
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Growth of ZnO/Zn_<1-x>Mg_xO films by pulsed laser ablation2005
- Author(s)
  T.Maemoto, N.Ichiba, S.Sasa, M.Inoue
- Journal Title
  
  Thin Solid Films 486
  
  Pages: 174-177
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Electron transport in InAs field effect and mesoscopic device2005
- Author(s)
  M.Koyama, M.Furukawa, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proceedings of 12th International Conference on Narrow Gap Semiconductors
  
  Pages: 434-437
- Data Source
  KAKENHI-PROJECT-17760284
[Journal Article] Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields
- Author(s)
  M. Koyama, K. Fujiwara, N. Amano, T.Maemoto, S. Sasa, and M. Inoue,
- Journal Title
  
  phys. Stat. sol.c 印刷中
  
  Pages: 0-0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] 水系前駆体溶液とエキシマ光を用いた酸化インジウム薄膜の低温形成と薄膜トランジスタの特性評価2022
- Author(s)
  駒井伯成, 大浦紀頼, 和田英男, 小山政俊, 佐々誠彦, 前元利彦, 竹添法隆, 清水昭宏, 伊藤寛
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04203
[Presentation] Durability Evaluation of Multilayer Oxide Thin-Films Formed on Cyclo-Olefin Polymer Substrate by Repeated Bending Tests2022
- Author(s)
  Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Yoshiyuki Harada, Toshihiko Maemoto, Shigehiko Sasa
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04203
[Presentation] COP基板上に形成した酸化亜鉛系薄膜の繰り返し曲げ耐久性評価2021
- Author(s)
  大浦紀頼, 和田英男, 小山政俊, 前元利彦, 佐々誠彦
- Organizer
  電気学会，電子・情報・システム部門電子材料研究会
- Data Source
  KAKENHI-PROJECT-21K04203
[Presentation] ミストCVD法による 3C -SiC(111)テンプレート基板上へのε-Ga2O3薄膜の成長2019
- Author(s)
  藤原壮大，金子豊和，小山政俊，前元利彦，佐々誠彦
- Organizer
  日本材料学会半導体エレクトロニクス部門委員会第1回講演会・見学会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] ミストCVD法による3C-SiC(111)テンプレート基板へのGa2O3ヘテロエピタキシャル成長2018
- Author(s)
  金子豊和，藤原壮大，小山政俊，前元利彦，佐々誠彦
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] 溶液プロセスによる酸化物薄膜トランジスタの作製とバッファ層挿入による高性能化2018
- Author(s)
  大浦紀頼，高野圭祐，小山政俊，前元利彦，佐々誠彦
- Organizer
  電気関係学会関西連合大会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] ミストCVD法によって成長した (111) 3C-SiC テンプレート基板上ε-Ga2O3 薄膜の熱的安定性2018
- Author(s)
  金子豊和，藤原壮大，小山政俊，前元利彦，佐々誠彦
- Organizer
  電気関係学会関西連合大会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] Heteroepitaxial growth of ε-Ga2O3 thin films on (111) 3C-SiC templates by mist chemical vapor deposition2018
- Author(s)
  T. Kaneko, S. Fujiwara, M. Koyama, T. Maemoto, and S. Sasa
- Organizer
  Int. Symp. on Transparent Conductive Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] 溶液法により形成したAl添加ZnO-TFTの特性評価と基板依存性2018
- Author(s)
  大浦紀頼，小山政俊，前元利彦，佐々誠彦
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] 酸化物半導体を用いたフレキシブル薄膜トランジスタの室温形成と曲げ耐性評価2018
- Author(s)
  熊谷敏宏，大浦紀頼，小山政俊，前元利彦，佐々誠彦
- Organizer
  電気関係学会関西連合大会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] フレキシブル基板上に形成した酸化物薄膜の曲げ耐性評価2017
- Author(s)
  永山幸希，松田宗平，カルトシュタイン　オリバー，小山政俊, 前元利彦，佐々誠彦
- Organizer
  2017年真空・表面科学合同講演会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] Study for Enhancement of Terahertz Radiation Using GaSb/InAs Heterostructures2017
- Author(s)
  M. Koyama, Y. Kinoshita, M. Tatsumi, T. Maemoto, S. Sasa, S. Hamauchi, I. Kawayama and M. Tonouchi
- Organizer
  The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] 溶液法を用いた酸化亜鉛系薄膜トランジスタの作製および熱ナノインプリント法による酸化物薄膜のダイレクトパターニング2017
- Author(s)
  木村史哉, アブドゥラハナキ, 孫　屹, 佐々木祥太, 永山幸希, 小山政俊, 前元利彦, 佐々誠彦
- Organizer
  電子情報通信学会研究会機能ナノデバイスおよび関連技術
- Place of Presentation
  北海道大学
- Year and Date
  2017-02-24
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] 溶液法により形成したAl添加ZnO薄膜トランジスタの焼結雰囲気による影響とAl添加量依存性2017
- Author(s)
  大浦紀頼，木村史哉，小山政俊, 前元利彦，佐々誠彦
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] 真空および非真空プロセスにより成長した酸化亜鉛系薄膜へのエキシマ光照射効果2017
- Author(s)
  松田宗平，永山幸希，カルトシュタイン　オリバー，木村史哉，小山政俊，前元利彦，佐々誠彦
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] Effects of He plasma treatment on zinc oxide thin film transistors2017
- Author(s)
  Shotaro Shinya, Toyokazu Kaneko, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa
- Organizer
  The 2017 International Meeting for Future of Electron Devices, Kansai
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] 酸化亜鉛を用いたMIS型セルフスイッチングダイオードの作製と評価2017
- Author(s)
  松田宗平，永山幸希，孫屹，小山政俊，前元利彦，佐々誠彦，葛西誠也
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜(神奈川県横浜市)
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] プリンテッド&フレキシブルエレクトロニクスに向けた酸化物半導体のデバイス・プロセス開発2017
- Author(s)
  前元利彦
- Organizer
  次世代プリンテッドエレクトロニクスコンソーシアム
- Invited
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] ending Experiment and Resistance Evaluation of Zinc Oxide Thin Films Grown on Cyclo Olefin Substrates2017
- Author(s)
  Oliver Kaltstein, Koki Nagayama, Masatoshi Koyama, Toshihiko Maemoto, Shigehiko Sasa
- Organizer
  The 2017 International Conference on Flexible and Printed Electronics (ICFPE2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] シクロオレフィンポリマー上に室温形成した酸化亜鉛薄膜トランジスタの曲げ劣化に関する一考察2017
- Author(s)
  永山幸希，松田宗平，カルトシュタイン　オリバー，木村史哉，小山政俊，前元利彦，佐々誠彦
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] ZnO TFTに対するHeプラズマ処理の影響2017
- Author(s)
  新屋翔太郎, 金子豊和, 小山政俊, 前元利彦，佐々誠彦
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] フレキシブル基板上に形成した酸化亜鉛薄膜の曲げ耐性評価2016
- Author(s)
  芦田浩平，永山幸希，孫屹，カルトシュタインオリバー，小山政俊，前元利彦，佐々誠彦
- Organizer
  電気関係学会関西連合大会
- Place of Presentation
  大阪府立大学なかもずキャンパス
- Year and Date
  2016-11-23
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] 溶液法により形成した高抵抗AZO薄膜をバッファ層に用いたAZO積層薄膜トランジスタの作製と評価2016
- Author(s)
  木村史哉，佐々木祥太，孫屹，小山政俊，前元利彦，佐々誠彦
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-14
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] 溶液プロセス及びインクジェットプロセスによる酸化亜鉛系薄膜トランジスタの作製と評価2016
- Author(s)
  佐々木祥太，木村史哉，大浦紀頼，孫屹，小山政俊，前元利彦，佐々誠彦
- Organizer
  電気関係学会関西連合大会
- Place of Presentation
  大阪府立大学なかもずキャンパス
- Year and Date
  2016-11-22
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] IZO薄膜トランジスタのヒステリシス特性改善の検討2016
- Author(s)
  大溝悠樹，新屋翔太郎，小山政俊，前元利彦，佐々誠彦
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-14
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] ナノインプリント法によるシクロオレフィンポリマーを用いた酸化亜鉛系薄膜のダイレクトパターンニング2016
- Author(s)
  ハナキアブドゥラ，木村史哉，永山幸希，芦田浩平，孫屹，小山政俊，前元利彦，佐々誠彦
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] 塗布プロセスによる酸化亜鉛系薄膜トランジスタの作製と評価 -プリンテッドエレクトロニクス応用を目指して-2016
- Author(s)
  佐々木祥太，木村史哉，大浦紀頼，孫屹，小山政俊，前元利彦，佐々誠彦
- Organizer
  日本材料学会第２回半導体エレクトロニクス部門委員会研究会
- Place of Presentation
  大阪府立大学なかもずキャンパス
- Year and Date
  2016-07-30
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] Fabrication and characterization of AZO multi-layer thin film transistors using AZO thin film buffers by soution method2016
- Author(s)
  F. Kimura, S. Sasaki, K. Oura, Y. Sun, M. Koyama, T. Maemoto and S. Sasa
- Organizer
  International Workshop on ZnO and Related Materials
- Place of Presentation
  National Taiwan University, Taiwan
- Year and Date
  2016-11-01
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] Fabrication and characterization of zinc oxide based self-switching nano-diode2016
- Author(s)
  S. Matsuda, K. Nagayama, K. Ashida, Y. Sun, M. Koyama, T. Maemoto, S. Sasa and S. Kasai
- Organizer
  International Workshop on ZnO and Related Materials
- Place of Presentation
  National Taiwan University, Taiwan
- Year and Date
  2016-11-01
- Data Source
  KAKENHI-PROJECT-16K06327
[Presentation] InAs/AlGaSbヘテロ構造の分子線エピタキシャル成長と高誘電率ゲート材料を用いたHFETの製作2013
- Author(s)
  森口航平，西坂和一，前元利彦，尾形健一，佐々誠彦
- Organizer
  2013年春季第60回応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学，神奈川
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification effects in ZnO-based self-switching nanodiodes toward transparent flexible electronics2013
- Author(s)
  T. Maemoto, Y. Kimura, Y.Sun, S., S. Sasa
- Organizer
  18^<th> International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
- Place of Presentation
  Matsue, Shimane, Japan
- Year and Date
  2013-07-22
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] InAs/AlGaSbヘテロ構造の分子線エピタキシャル成長と高誘電率ゲート材料を用いたHFETの製作2013
- Author(s)
  森口航平, 西坂和一, 前元利彦, 尾形健一, 佐々誠彦
- Organizer
  2013年春期第60回応用物理学会学術講演会
- Place of Presentation
  神奈川県厚木市
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Crystal growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and fabrication of InAs HFETs using Ni/Au alloy ohmic metal2013
- Author(s)
  K. Moriguchi, T.Maemoto, K. Ogata, S.Sasa
- Organizer
  2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Pulsed laser deposition of low resistivity transparent conducting Al-doped ZnO films at room temperature and its transparent thin-film transistor applications2013
- Author(s)
  Y. Sun, Y. Kimura, T. Maemoto, S. Sasa
- Organizer
  12^<th> International Conference on Laser Ablation
- Place of Presentation
  Ischia, Italy
- Year and Date
  2013-10-08
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 高誘電率ゲート材料を用いたInAs/AlGaSbヘテロ構造トランジスタの作製と半導体/ゲート界面の改善2013
- Author(s)
  森口航平, 前元利彦, 尾形健一, 佐々誠彦
- Organizer
  平成25年電気関係学会関西連合大会
- Place of Presentation
  大阪府寝屋川市
- Year and Date
  2013-11-16
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] High transconductance zinc oxide thin-film transistors on flexible plastic substrates2012
- Author(s)
  Y.Kimura, T.Higaki, T.Maemoto, S.Sasa, M.Inoue
- Organizer
  APS March Meeting 2012
- Place of Presentation
  ボストンコンベンションセンター(アメリカ)
- Year and Date
  2012-02-29
- Data Source
  KAKENHI-PROJECT-22310084
[Presentation] Electron transport properties in self switching nano-diodes2012
- Author(s)
  T.Kiso, K.Nishisaka, T.Maemoto, S.Sasa, S.Kasai, M.Inoue
- Organizer
  APS March Meeting 2012
- Place of Presentation
  ボストンコンベンションセンター(アメリカ)
- Year and Date
  2012-02-29
- Data Source
  KAKENHI-PROJECT-22310084
[Presentation] Nonlinear Three Branch Nano-Junction Devices and Their Application to Logic Circuits2012
- Author(s)
  S. Kasai, S. F. A. Rahman, M. Sato, X. Yin, and T. Maemoto
- Organizer
  2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)
- Place of Presentation
  Okinawa Seinen-kaikan, Naha, Japan
- Data Source
  KAKENHI-PROJECT-22310084
[Presentation] Electron transport properties in self switching nano-diodes2012
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  APS March meeting 2012
- Place of Presentation
  Boston, Massachusetts, USA
- Year and Date
  2012-02-29
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Effects of post annealing on IZO thin-film transistor characteristics2012
- Author(s)
  R. Morita, T. Maemoto, and S. Sasa
- Organizer
  2012 Int. Mtg. for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Osaka
- Year and Date
  2012-05-10
- Data Source
  KAKENHI-PROJECT-22560353
[Presentation] Electron transport properties in self switching nano-diodes2012
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  APS March Meeting 2012
- Place of Presentation
  ボストンコンベンションセンター（アメリカ）
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 分子線エピタキシー法によるInAs/AlGaSbヘテロ構造の結晶成長と高誘電率ゲート材料を用いた電界効果トランジスタの作製2012
- Author(s)
  森口航平, 西坂和一, 前元利彦, 佐々誠彦, 井上正崇
- Organizer
  平成24年電気関係学会関西連合大会
- Place of Presentation
  大阪府吹田市
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification effects in ZnO-based transparent self-switching nano-diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, and M. Inoue
- Organizer
  2012 Int. Mtg. for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Kansai University Centenary Memorial Hall, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 分子線エピタキシー法によるInAs/AlGaSbヘテロ構造の結晶成長と高誘電率ゲート材料を用いた電界効果トランジスタの作製2012
- Author(s)
  森口航平，西坂和一，前元利彦，佐々誠彦，井上正崇
- Organizer
  平成24年電気関係学会関西連合大会
- Place of Presentation
  関西大学100周年記念会館，大阪
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] フレキシブル酸化亜鉛透明薄膜トランジスタの開発2012
- Author(s)
  孫屹,木村祐太,前元利彦,佐々誠彦
- Organizer
  電気材料技術懇談会
- Place of Presentation
  大阪
- Year and Date
  2012-07-12
- Data Source
  KAKENHI-PROJECT-22560353
[Presentation] Rectification effects in ZnO-based transparent self-switching nano-diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  2012 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Suita, Osaka, Japan
- Year and Date
  2012-05-10
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification Effects of ZnO-based Transparent Nano-diodes on Glass and Flexible Plastic Substrates2012
- Author(s)
  Y. Kimura, Y. Sun, T. Maemoto, S. Sasa , S. Kasai and M. Inoue
- Organizer
  25th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Kobe Meriken Park Oriental Hotel, Kobe, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] A reflection layer for enhanced THz radiation from InAs thin films2012
- Author(s)
  K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, and M. Tonouchi
- Organizer
  2012 Int. Mtg. for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Kansai University Centenary Memorial Hall, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] A reflection layer for enhanced THz radiation from InAs thin films2012
- Author(s)
  K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, M. Tonouchi
- Organizer
  2012 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Suita, Osaka, Japan
- Year and Date
  2012-05-10
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification Effects of ZnO-based Transparent Nano-diodes on Glass and Flexible Plastic Substrates2012
- Author(s)
  Y. Kimura, Y. Sun, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  25^<th> International Microprocess and Nanotechnology Conference
- Place of Presentation
  Kobe, Hyogo, Japan
- Year and Date
  2012-10-31
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Fabrication and transport properties in InAs-based self switching nano-diodes2011
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  24th Int. Microprocesses and Nanotechnology Conference
- Place of Presentation
  ANAホテル京都（京都府）
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Room temperature growth of zinc oxide thin films by pulsed laser deposition and its flexible thin-film transistor application2011
- Author(s)
  Y.Kimura, T.Higaki, Y.Sun, T.Maemoto, S.Sasa, M.Inoue
- Organizer
  11th INTERNATIONAL CONFERENCE ON LASER ABLATION (COLA2011)
- Place of Presentation
  Hotel IBEROSTAR (Mexico)
- Year and Date
  2011-11-15
- Data Source
  KAKENHI-PROJECT-22310084
[Presentation] Fabrication and transport properties in InAs-based self switching nano-diodes2011
- Author(s)
  T.Kiso, K.Nishisaka, T.Maemoto, S.Sasa, S.Kasai, M.Inoue
- Organizer
  24th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  京都全日空ホテル(京都)
- Data Source
  KAKENHI-PROJECT-22310084
[Presentation] Zinc Oxide Thin-Film Transistors on Flexible Plastic Substrates and Glass Substrates Fabricated at Room Temperature2011
- Author(s)
  T.Higaki, Y.Kimura, T.Maemoto, S.Sasa, M.Inoue
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  愛知県産業労働センター(名古屋市)
- Year and Date
  2011-09-29
- Data Source
  KAKENHI-PROJECT-22310084
[Presentation] Transport Properties in InAs based Ballistic Rectifiers and Self-Switching Diodes2011
- Author(s)
  T. Kiso, T. Maemoto, K. Nishisaka, S. Sasa, S. Kasai, and M. Inoue
- Organizer
  17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nano structures (EDISON 17)
- Place of Presentation
  University of CaliforniaSanta Barbara, Santa Barbara, California, USA
- Data Source
  KAKENHI-PROJECT-22310084
[Presentation] Fabrication and transport properties in InAs-based self switching nano-diodes2011
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  24^<th> Int. Microprocesses and Nanotechnology Conference
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2011-10-26
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulators2011
- Author(s)
  T. Kiso, H. Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Proceedings of the 2011 International Meeting for Future of Electron Devices
- Place of Presentation
  関西大学（大阪府）
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Transport Properties in InAs based Ballistic Rectifiers and Self-Switching Diodes2011
- Author(s)
  T.Kiso, T.Maemoto, K.Nishisaka, S.Sasa, S.Kasai, M.Inoue
- Organizer
  17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 17)
- Place of Presentation
  カリフォルニア大学,サンタバーバラ校(アメリカ)
- Year and Date
  2011-08-08
- Data Source
  KAKENHI-PROJECT-22310084
[Presentation] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulator2011
- Author(s)
  T. Kiso, H.Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  2011 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Suita, Osaka, Japan
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Transport Properties of InAs-based Three-terminal Ballistic Junctions2010
- Author(s)
  H.Nishioka, Y.Ishibashi, T.Kiso, T.Maemoto, S.Sasa, S.Kasai, M.Inoue
- Organizer
  23rd International Microprocesses and Nanotechnology Conference
- Place of Presentation
  リーガロイヤルホテル小倉(小倉)
- Data Source
  KAKENHI-PROJECT-22310084
[Presentation] Ballistic three-terminal devices based on T-branch junctions in InAs/AlGaSb heterostructures2010
- Author(s)
  H.Nishioka, Y.Ishibashi, T.Maemoto, S.Sasa, M.Inoue
- Organizer
  IEEE The 2010 International Meeting for Future of Electron Devices
- Place of Presentation
  関西大学・百周年記念会館(大阪府吹田市)
- Data Source
  KAKENHI-PROJECT-22310084
[Presentation] 高誘電率材料を用いたInAs/AlGaSb HEMT の作製と評価2008
- Author(s)
  藤原健司,塩路真広,天野直樹,小山政俊,前元利彦,佐々誠彦,井上正崇
- Organizer
  2008 年秋季第70 回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Fabrication and characterization of InAs/AlGaSb HEMTs with high-k gate insulators2008
- Author(s)
  T. Maemoto, K. Fujiwara, T. Inoue, N. Amano, M. Koyama, S. Sasa, M. Inoue
- Organizer
  APS March Meeting 2008
- Place of Presentation
  New Orleans, USA
- Year and Date
  2008-03-12
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields2008
- Author(s)
  M. Koyama, K. Fujiwara, N. Amano, T. Maemoto, S. Sasa, M. Lnoue
- Organizer
  34th International Symposium on Compound Semiconductors
- Place of Presentation
  Rust, Germany
- Year and Date
  2008-09-23
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] 高誘電率材料を用いたInAs/AIGaSb HEMTの作製と評価2008
- Author(s)
  藤原健司, 塩路真広, 天野直樹, 小山政俊, 前元利彦, 佐々誠彦, 井上正崇
- Organizer
  2008年秋季第70回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] InAs/AlGaSb HEMTs with Al_2O_3 and HfO_2 Gate Insulators2008
- Author(s)
  K. Fujiwara, N, Amano, M. Koyama, T.Maemoto, S. Sasa, and M. Inoue
- Organizer
  2008 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  大阪大学中ノ島センター
- Year and Date
  2008-05-02
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields2008
- Author(s)
  M. Koyama, K. Fujiwara, N. Amano, T.Maemoto, S. Sasa, and M. Inoue
- Organizer
  34th International Symposium on Compound Semiconductors
- Place of Presentation
  Rust,Germany
- Year and Date
  2008-09-23
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Nonlinear Electron Transport properties in lnAs/AlGaSb Three-Terminal Ballistic Junctions2007
- Author(s)
  M.Koyama, T.Inoue, N.Amano, T.Maemoto, S.Sasa, and M.Inoue
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology 2007
- Place of Presentation
  Waikaloa,Hawaii,USA
- Year and Date
  2007-12-06
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2007
- Author(s)
  H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Int. Mtg. on Future Electron Devices Kansai 2007
- Place of Presentation
  Osaka Univ., Japan
- Year and Date
  2007-04-24
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Ballistic rectification in four-terminal InAs/AlGaSb nanostructures2007
- Author(s)
  M. Koyama, H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  APS March Meeting 2007
- Place of Presentation
  Denver, USA
- Year and Date
  2007-03-07
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Nonlinear Electron Transport Properties and Rectification Effects in InAs/AlGaSb Ballistic Devices2007
- Author(s)
  M. Koyama, T. lnoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  15th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors
- Place of Presentation
  Tokyo Univ., Japan
- Year and Date
  2007-07-24
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] InAs/AlGaSb量子細線を有するT字型3分岐構造における電子輸送特性2007
- Author(s)
  小山政俊, 中島貴史, 井上達也, 天野直樹, 前元利彦, 佐々誠彦, 井上正崇
- Organizer
  2007年秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学,北海道
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Fabrication and Characrerization of Sb-Based Diode structures for Detecting Subterahertz Waves2007
- Author(s)
  T.Inoue, H.Takahashi, T.Maemoto, S.Sasa and M.Inoue
- Organizer
  2007 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka,Japan
- Year and Date
  2007-04-24
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Fabrication and Characterization of Sb-Based Diode structures for Detecting Subterahertz Waves2007
- Author(s)
  T.Inoue, H.Takahashi, T.Maemoto, S.Sasa and M.Inoue
- Organizer
  2007 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka,Japan
- Year and Date
  2007-04-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Nonlinear Electron Transport Properties in InAs/AlGaSb Three-Terminal Ballistic Junctions2007
- Author(s)
  M. Koyama, T. lnoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology
- Place of Presentation
  Hawaii, USA
- Year and Date
  2007-12-06
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves(2)2007
- Author(s)
  T. Inoue, H. Takahashi, T. Maemoto, S. Sasa, M. lnoue
- Organizer
  JSAP Annual meeting
- Place of Presentation
  Kanagawa, Japan
- Year and Date
  2007-03-30
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Field characteristics of electron mobility and velocity in InAs/AlGaSb HFETs with high-k gate insulators2006
- Author(s)
  T. Maemoto, M. Koyama, H. Takahashi, S. Sasa, M. Inoue
- Organizer
  Int. Conf. on Phys. of Semicond.
- Place of Presentation
  Wien, Austria
- Year and Date
  2006-07-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Ballistic Rectification effects in InAs/AlGaSb Nano-structures2006
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Int. Conf. on Phys. of Semicond.
- Place of Presentation
  Wien, Austria
- Year and Date
  2006-07-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Fabricatior and characterization of Sb-based diode structures for detectinc, subterahertz waves2006
- Author(s)
  H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  IEICE Technical meetings
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2006-12-08
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Nonlinear electron transport properties in InAs/AlGaSb ballistic rectifiers2006
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Int. Mtg. on Future Electron Devices Kansai 2006
- Place of Presentation
  Kyoto Univ., Japan
- Year and Date
  2006-04-21
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] 高誘電率ゲート材料を用いたInAs/AlGaSbヘテロ構造トランジスタの作製と半導体/ゲート界面の改善
- Author(s)
  森口航平，前元利彦，尾形健一，佐々誠彦
- Organizer
  平成25年電気関係学会関西連合大会
- Place of Presentation
  大阪電気通信大学寝屋川キャンパス，大阪府寝屋川市
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Pulsed laser deposition of low resistivity transparent conducting Al-doped ZnO films at room temperature and its transparent thin-film transistor applications
- Author(s)
  Y. Sun, Y. Kimura, T. Maemoto and S. Sasa
- Organizer
  12th International Conference on Laser Ablation
- Place of Presentation
  Hotel Continental, Ischia, Italy
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Crystal growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and fabrication of InAs HFETs using Ni/Au alloy ohmic metal
- Author(s)
  K. Moriguchi, T. Maemoto, K. Ogata and S. Sasa
- Organizer
  2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  Hilton Fukuoka Sea Hawk, Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Effects of post annealing on IZO thin-film transistor characteristics
- Author(s)
  R. Morita, T. Maemoto, and S. Sasa
- Organizer
  2012 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  関西大学100周年記念会館（大阪）
- Data Source
  KAKENHI-PROJECT-22560353
[Presentation] フレキシブル酸化亜鉛透明薄膜トランジスタの開発
- Author(s)
  孫屹，木村祐太，前元利彦，佐々誠彦
- Organizer
  電気材料技術懇談会
- Place of Presentation
  大阪市中央電気倶楽部（大阪）
- Data Source
  KAKENHI-PROJECT-22560353
[Presentation] Rectification effects in ZnO-based self-switching nanodiodes toward transparent flexible electronics
- Author(s)
  T. Maemoto, Y. Kimura, Y. Sun, S. Kasai, and S. Sasa
- Organizer
  18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
- Place of Presentation
  Shimane Prefectural Convention Center "Kunibiki Messe", Matsue, Japan
- Data Source
  KAKENHI-PROJECT-23560422

1. SASA Shigehiko (50278561)

# of Collaborated Projects: 4 results

# of Collaborated Products: 94 results
2. INOUE Masataka (20029325)

# of Collaborated Projects: 3 results

# of Collaborated Products: 63 results
3. KASAI Seiya (30312383)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
4. 吉村勉 (00460767)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 和田英男 (90846320)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
6. 小山政俊

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results

MAEMOTO TOSHIHIKO 前元 利彦

前元 利彦 マエモト トシヒコ

MAEMOTO Toshihiko 前元 利彦

Research Projects

Research Products

Co-Researchers

Development of a harmless flexible diode to humans using by oxide semiconductors and application of rectenna circuitsPrincipal Investigator

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Development of transparent diodes using oxide semiconductors and these applications to energy harvesting circuitsPrincipal Investigator

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Fabrication of new structure transistors using III-V Semiconductors/High-k materials on Si substratesPrincipal Investigator

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Study on the nonlinear characteristics in semiconductor nanowire three branch junction and its control

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Development of ZnO-based transistors operated in gigahertzfrequency range

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High-sensitive Terahertz technology using semiconductor quantum nanostructuresPrincipal Investigator

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Fabrication of terahertz detectors based on InAs/AISb/AlGaSb/GaSb heterostructures

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高誘電率(High-k)ゲートを用いたInAs/AISb系高速トランジスタの開発Principal Investigator

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高移動度InAs系ヘテロ構造を用いた極微構造の作製と新機能デバイス探索Principal Investigator

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InAsヘテロ構造を用いた量子効果トランジスタの開発と高温動作Principal Investigator

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[Journal Article] Repeated bending durability evaluation of ZnO and Al-doped ZnO thin films grown on cyclo-olefin polymer for flexible oxide device applications2022

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[Journal Article] Low-Temperature Formation of Indium Oxide Thin-Film using Excimer Light by Solution Process and Characterization of Thin-Film Transistor Characteristics2022

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[Journal Article] Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structures2021

MAEMOTO TOSHIHIKO 前元利彦

前元利彦マエモトトシヒコ

MAEMOTO Toshihiko 前元利彦