uchida kazuo 内田和男

… Alternative Names

UCHIDA Kazuo 内田和男

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Researcher Number	80293116
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2018 – 2020: 電気通信大学, 大学院情報理工学研究科, 教授 2000 – 2004: The University of Electro-Communications, Dept. of Electro-Communications, ASSOCIATE PROFESSOR, 電気通信学部, 助教授 1999: 電気通信大学, 電気通信学部, 講師
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials Except Principal Investigator 電子デバイス・機器工学
Keywords	Principal Investigator HMDS / 酸化物半導体トンネル電極 / AlGaN系UVC-LED / UV LED / MOVPE / UVLED / ZnO / AlGaN / トンネル接合 / RFスパッタリング … More / 有機金属気相成長法 / 酸化物半導体 / 窒化物半導体 / UV-LED / FT-IR / Porosity / X-ray total reflection method / Low dielectric materials / Nano-porous SiOx / Gas evaporation Technique / クラスター / 酸化シリコンナノポーラス薄膜 / 層間絶縁膜 / 低誘電率材料 / 空孔率 / カズ中蒸発法 / FTIR / 多孔質度 / 全反射X線 / 低誘電率層間絶縁膜 / SiO_x超微粒子膜 / ガス中蒸発法 … More Except Principal Investigator MOS / MBE / FIB / position-controlled deposition / memory / nanocrystal / germanium / silicon / AFM / ケルビンプローブ / 光酸化 / 電子ビームリソグフィー / 二次元配列 / メモリー / ナノクリスタル / ゲルマニウム / シリコン / High-Pressure Form / Phase Transformation / Cluster-Beam Evaporation / Coulomb Blockade / Granular Metal Film / MOVPE / Semiconductor Position Sensitive Detector / Griffith University / 集積デバイス / 電子線ソングラフィー / MEMS / ナノ構造デバイス / 半導体位置センター / Siナノ構造 / HBT / Position Sensitive Detector (PSD) / 高圧相 / 相転移 / クラスタービーム蒸発法 / クーロンブロッケード / 粒状金属薄膜 / MOVPE法 / 半導体位置センサー / グリフィス大学 Less

Study on high efficiency AlGaN UVC-LED with oxide semiconductor tunelling junctionPrincipal Investigator
- Principal Investigator
  
  uchida kazuo
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  The University of Electro-Communications
Fabrication of Nanocrystal Memories by Position Controlled Deposition of Ge Nanocrystals
- Principal Investigator
  
  NOZAKI Shinji
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  The University of Electro-Ccmmunications
NANO-POROUS SiOx THIN FILMS FOR APPLICATION OF LOW DIELECTRIC MATERIALSPrincipal Investigator
- Principal Investigator
  
  UCHIDA Kazuo
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Electro-Communications
Collaboration of Education/Research on Nano-Structgured Semiconductor Devices
- Principal Investigator
  
  MORISAKI Hiroshi
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  The University of Electro-Communications

All 2021 2020 2018 2004 2003 2002

All Journal Article Presentation

[Journal Article] Growth and characterization of p-type InGaAs on InP subtrates by LP-MOCVD using a new carbon-dopant source, CBrCl32004
- Author(s)
  K.Uchida
- Journal Title
  
  J. Crystal Growth 272
  
  Pages: 658-663
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350183
[Journal Article] Growth and characterization of p-type InGaAs on InP substrates by LP-MOCVD using a new carbon-dopant source, CBrCl_32004
- Author(s)
  K.Uchida, K.Takahashi, S.Kabe, S.Nozaki, H.Morisaki
- Journal Title
  
  J.Crystal Growth 272
  
  Pages: 658-663
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350183
[Journal Article] Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl_3 and quantitative analysis of the compensation mechanism in the epilayers2003
- Author(s)
  S.Bhunia, K.Uchida, S.Nozaki, N.Sugiyama, M.Furiya, H.Morisaki
- Journal Title
  
  J.Appl.Phys. 93(3)
  
  Pages: 1613-1619
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350183
[Journal Article] Heavily carbon doping of GaAs by MOVPE using a newdopant source CBrCl3 and characterization of the epilayers2003
- Author(s)
  K.Uchida
- Journal Title
  
  J. Crystal Growth 248
  
  Pages: 124-129
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350183
[Journal Article] Real-time measurement of rocking curves during MOVPE growth of Ga_xIn_<1-x>P/GaAs2003
- Author(s)
  S.Bhunia, T.Kawamura, Y.Watanabe, S.Fujikawa, J.Matsui, Y.Kagoshima, Y.Tsusaka, K.Uchida, S.Nozaki, H.Morisaki
- Journal Title
  
  Appl.Surface Science 216
  
  Pages: 382-387
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350183
[Journal Article] Heavily carbon doping of GaAs by MOVPE using a newdopant source CBrCl_3 and characterization of the epilayers2003
- Author(s)
  K.Uchida, S.Bhunia, N.Sugiyama, M.Furiya, M.Katoh, S.Katoh, S.Nozaki, H.Morisaki
- Journal Title
  
  J.Crystal Growth 248
  
  Pages: 124-129
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350183
[Journal Article] A photo-oxidation generated low-k dielectric film deposited by reactive evaporation of SiO2002
- Author(s)
  J.J.Si, Y.Show, S.Banerjee, H.Ono, K.Uchida, S.Nozaki, H.Morisaki
- Journal Title
  
  Microelectronic Engineering 60
  
  Pages: 313-321
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350183
[Presentation] 正孔注入促進に向けたp-AlGaN/n-ZnOトンネル接合のバンド構造解析2021
- Author(s)
  浮田駿、田尻武義、内田和男
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04226
[Presentation] p型コンタクト層にn-ZnO層を接合したAlGaN系pnダイオードのEL特性評価2021
- Author(s)
  孫錚、王新磊、森元諄、田尻武義、内田和男
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04226
[Presentation] p型コンタクト層にn-ZnOトンネル層を有するAlGaN系pnダイオードの作製及び電気的評価2020
- Author(s)
  孫錚，森元諄, 大黒将也,田尻武義, 内田和男
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04226
[Presentation] High-Al content AlGaN pn diode with p-AlGaN improved by the UV wet oxidation2018
- Author(s)
  Xiaojia Zhang, Jun Morimoto, Kazuo Uchida, and Shinji Nozaki
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04226

1. NOZAKI Shinji (20237837)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
2. ONO Hiroshi (00134867)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. MORISAKI Hiroshi (00029167)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

uchida kazuo 内田 和男

UCHIDA Kazuo 内田 和男

Research Projects

Research Products

Co-Researchers

Study on high efficiency AlGaN UVC-LED with oxide semiconductor tunelling junctionPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Fabrication of Nanocrystal Memories by Position Controlled Deposition of Ge Nanocrystals

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

NANO-POROUS SiOx THIN FILMS FOR APPLICATION OF LOW DIELECTRIC MATERIALSPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Collaboration of Education/Research on Nano-Structgured Semiconductor Devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Growth and characterization of p-type InGaAs on InP subtrates by LP-MOCVD using a new carbon-dopant source, CBrCl32004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Growth and characterization of p-type InGaAs on InP substrates by LP-MOCVD using a new carbon-dopant source, CBrCl_32004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl_3 and quantitative analysis of the compensation mechanism in the epilayers2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Heavily carbon doping of GaAs by MOVPE using a newdopant source CBrCl3 and characterization of the epilayers2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Real-time measurement of rocking curves during MOVPE growth of Ga_xIn_<1-x>P/GaAs2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Heavily carbon doping of GaAs by MOVPE using a newdopant source CBrCl_3 and characterization of the epilayers2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] A photo-oxidation generated low-k dielectric film deposited by reactive evaporation of SiO2002

Author(s)

Journal Title

Description

Data Source

[Presentation] 正孔注入促進に向けたp-AlGaN/n-ZnOトンネル接合のバンド構造解析2021

Author(s)

Organizer

Data Source

[Presentation] p型コンタクト層にn-ZnO層を接合したAlGaN系pnダイオードのEL特性評価2021

Author(s)

Organizer

Data Source

[Presentation] p型コンタクト層にn-ZnOトンネル層を有するAlGaN系pnダイオードの作製及び電気的評価2020

Author(s)

Organizer

Data Source

[Presentation] High-Al content AlGaN pn diode with p-AlGaN improved by the UV wet oxidation2018

Author(s)

Organizer

Data Source

uchida kazuo 内田和男

UCHIDA Kazuo 内田和男