HOSODA Makoto 細田誠

… Alternative Names

細田誠ホソダマコト

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Researcher Number	80326248
Other IDs
Affiliation (based on the past Project Information) *help	2011: 大阪市立大学, 大学院・工学研究科, 教授 2011: 大阪市立大学, 工学研究科, 教授 2009: 大阪市立大学, 大学院・工学研究科, 教授 2007: Osaka City University, Faculty of Engineering, Professor 2006: 大阪市立大学, 大学院工学研究科, 教授 2001 – 2004: 大阪市立大学, 大学院・工学研究科, 教授 2000: 大阪市立大学, 工学部, 教授
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator 固体物性Ⅰ(光物性・半導体・誘電体) / Applied optics/Quantum optical engineering
Keywords	Principal Investigator 電界ドメイン / 量子井戸 / 半導体超格子 / Current oscillation / Asymmetric multiple auantum well / Electric field domain / Quantum well / Semiconductor superlattice / 多重有限長超格子 / 非線形ダイナミクス … More / 半導超格子 / 電流発振 / 非対称多重量子井戸 / quantum-well microtube / electric field domain / photocurrent impulse response / S-L electron scattering / carrier transport / higher subband / quantum well / semiconductor superlattice / Gamma-Xキャリア輸送 / マイクロチューブ / 波長変換 / Gamma-X キャリア輸送 / Type-I Type-II遷移 / 短波長発光素子 / Lサブバンド / ガンマ-X輸送 / 高位サブバンド / サブバンド共鳴 / 量子井戸マイクロチューブ / 光電流インパルス応答 / X-L電子散乱 / キャリア輸送 / 高位サブバンド準位 … More Except Principal Investigator coherent phonon / phonon wave-pecket / semiconductor superlattice / pump-probe / ウムクラップ過程 / マイクロプロービング / コヒーレントフォン / テラヘルツ / マイクロポンプ・プローブ / コヒーレントフォノン / フォノン波束 / 半導体超格子 / ポンプ・プローブ装置 / ナノチューブ / 第一原理計算 / ウエットエッチング / レーザ発振 / ホトルミネッセンス / ウエットプロセス / FD-TDシミュレーション / 量子ドット / 量子井戸 / マイクロチューブ Less

Development of high efficient semiconductor microtube-lasers containing micro-ring resonators
- Principal Investigator
  
  OHTANI Naoki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Doshisha University
Nonlinear dynamics of electric field domains in semioonductor superlatticesPrincipal Investigator
- Principal Investigator
  
  HOSODA Makoto
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka City University
Dynamics of carrier transport through the higher energy subbands in semiconductor superlatticesPrincipal Investigator
- Principal Investigator
  
  HOSODA Makoto
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka City University
Micro-probing system of coherent phenomena in THz frequency region
- Principal Investigator
  
  MIZOGUCHI Kohji
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  Osaka City University

All 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation

[Journal Article] Various photoluminescence properties due to Gamma-X resonance in type-I GaAs/AlAs multiple-quantum wells consisting of quantum wells with different thicknesses2008
- Author(s)
  N. Ohtani, et. al. M. Hosoda
- Journal Title
  
  Physica E vol. 40
  
  Pages: 2016-2018
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Various photoluminescence properties due to Gamma-X resonance in type-I GaAs/AIAs multiple-quantum wells consisting of quantum wells with different thicknesses2008
- Author(s)
  N. Ohtani, et. al., and M. Hosoda
- Journal Title
  
  Physica E 40
  
  Pages: 2016-2018
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Photoluminescence properties affected by carrier transport between X and different first excited states originating from interface imperfbction in GaAs/AIAs multiple-quantum wells2008
- Author(s)
  H. Endo, S. Hiramatsu, H. Kitamura, T. Takamatsu, M. Hosoda, and N. Ohtani
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 682-684
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Photoluminescence properties affected by carrier transport between X and different first excited states originating from interface imperfection in GaAs/AlAs multi-quantum wells2008
- Author(s)
  H.Endo, S.Hiratsuka, H.Kitamura, T.Takamatsu, M.Hosoda, and N.Ohtani
- Journal Title
  
  Jpn.J Appl. Phys. 47
  
  Pages: 682-684
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Photoluminescence properties affected by carrier transport between X and different first excited states originating from interface imperfection in GaAs/AlAs multiple^quantum wells2008
- Author(s)
  H. Endo, S. Hiramatsu, H. Kitamura, T. Takamatsu, M. Hosoda, N. Ohtani
- Journal Title
  
  Jpn. J. Appl. Phys vol. 47
  
  Pages: 682-684
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Various photoluminescence properties due to Gamma-X resonance in type-I GaAs/AlAs multi-quantum wells consisting of quantum wells with different thicknesses2008
- Author(s)
  N.Ohtani, H.Endo, S.Hiramatsu, H.Kitamura, T.Takamatsu, and M.Hosoda
- Journal Title
  
  Physica E 40
  
  Pages: 2016-2018
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Various photoluminescence properties observed in a GaAs/AlAs asymmetric double-quantum-well superlattice2007
- Author(s)
  N.Ohtani, M.Hosoda
- Journal Title
  
  Physica Status Solidi (C) 2
  
  Pages: 353-355
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Various photoluminescence properties observed in a GaAs/AIAs asymmetric double-quantum-well superlattice2007
- Author(s)
  N. Ohtani and M. Hosoda
- Journal Title
  
  Phys. Stat. Sol. (c) 4
  
  Pages: 353-355
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Formation of electric-field domains in a system of multiple finite superlattices2007
- Author(s)
  M. Hosoda and S. Noma
- Journal Title
  
  Phys. Rev. B 75
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Influence of L subband states on optical and electric properties in GaAs/AlAs type-I superlattices2007
- Author(s)
  N.Ohtani, M.Hosoda
- Journal Title
  
  Proc. 28-th Int. Conf. Phys. Semicond. (ICPS 2006) (In press)
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Various photoluminescence properties observed in a GaAs/AlAs asymmetric double-quantum-well superlattice2007
- Author(s)
  N. Ohtani, M. Hosoda
- Journal Title
  
  Phys. Stat. Sol. (c) vol. 4
  
  Pages: 353-355
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Formation of electric-field domains in a system of Multiple finite superlattices2007
- Author(s)
  M. Hosoda, S. Noma
- Journal Title
  
  Phys. Rev. B vol. 75
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Formation of electric-field domains in a system of multiple finite superl attices2007
- Author(s)
  M.Hosoda and S.Noma
- Journal Title
  
  Phys.Rev.B 75
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Observation of subband resonances between high-energy states in a series of asymmetric double-quantum-well superlattice systems2006
- Author(s)
  M.Hosoda, et al.
- Journal Title
  
  Phys. Rev. B 73
- Data Source
  KAKENHI-PROJECT-18560013
[Journal Article] Electron scattering between X and L indirect valleys in type-I GaAs/AlAs semiconductor superlattices2005
- Author(s)
  M.Hosoda, et al.
- Journal Title
  
  Phys. Rev. B To be published
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350013
[Journal Article] Uniaxial-strain-induced transition from type-II to type-I band configuration of quantum well microtubes2004
- Author(s)
  N.Ohtani, M.Hosoda, et al.
- Journal Title
  
  Physica E 21
  
  Pages: 732-732
- Data Source
  KAKENHI-PROJECT-14350013
[Journal Article] Formation of electric-field domains in an asymmetric double-quantum-well GaAs/AlAs superlattice2004
- Author(s)
  N.Ohtani, Y.Hirose, T.Nishimura, T.Aida, M.Hosoda
- Journal Title
  
  Semiconductor Science and Technology 19
- Data Source
  KAKENHI-PROJECT-14350013
[Journal Article] Quantum-well microtube constructed from a freestanding thin quantum-well layer2003
- Author(s)
  M.Hosoda, et al.
- Journal Title
  
  Appl. Phys. Lett. 83
  
  Pages: 1017-1019
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350013
[Journal Article] Quantum-well microtube constructed from a freestanding thin quantum-well layer2003
- Author(s)
  M.Hosoda et al.
- Journal Title
  
  Appl.Phys.Lett. vol.83
  
  Pages: 1017-1019
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350013
[Journal Article] Electron scattering between X and L indirect valleys in Type-I GaAs/AlAs semiconductor superlattices
- Author(s)
  M.Hosoda et al.
- Journal Title
  
  Phys.Rev.B (to be published.)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350013
[Presentation] Fabrication and photoluminescence properties of semiconductor microtubes separated from substrates like bridge structures2012
- Author(s)
  Y. Ito, K. Akahane, M. Hosoda, and N. Ohtani
- Organizer
  5th International Conference on Optical, Optoelectronic and Photonic Materials and Applications(ICOOPMA 2012)
- Place of Presentation
  奈良
- Year and Date
  2012-06-06
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] 基板から分離した半導体マイクロチューブの作製と光学特性2011
- Author(s)
  伊藤祐輝, 西田博貴, 赤羽浩一, 細田誠, 大谷直毅
- Organizer
  第8回薄膜材料デバイス研究会
- Place of Presentation
  京都
- Year and Date
  2011-11-05
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] Fabrication and photoluminescence properties of semiconductor microtubes containing stacked quantum dots2011
- Author(s)
  Y.Ito, H.Nishida, K.Akahane, M.Hosoda, N.Ohtani
- Organizer
  15th International Symposium on the Physics of Semiconductors and Applications (ISPSA-XV)
- Place of Presentation
  Ramada Plaza Jeju Hotel(韓国・済州島)
- Year and Date
  2011-07-06
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] 量子井戸マイクロチューブレーザー発振に対する吸収基板の影響2011
- Author(s)
  片山直輝, 細田誠
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] Fabrication and photoluminescence properties of semiconductor microtubes containing stacked quantum dots2011
- Author(s)
  Y. Ito, H. Nishida, K. Akahane, M. Hosoda and N. Ohtani
- Organizer
  15th International Symposium on the Physics of Semiconductors and Applications(ISPSA-XV)
- Place of Presentation
  韓国済州島
- Year and Date
  2011-07-06
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] 積層量子ドット構造を含む半導体マイクロチューブの作製と光学特性2011
- Author(s)
  伊藤祐輝, 西田博貴, 赤羽浩一, 細田誠, 大谷直毅
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] 積層量子ドット構造を含む半導体マイクロチューブの作製と光学特性2011
- Author(s)
  伊藤祐輝, 西田博貴, 赤羽浩一, 細田誠, 大谷直
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] 半導体マイクロチューブの作製と光学特性2010
- Author(s)
  大谷直毅, 西田博貴, 吉川梨恵, 伊藤祐輝, 赤羽浩一, 細田誠
- Organizer
  第48回同志社大学理工学研究所研究発表会
- Place of Presentation
  京都
- Year and Date
  2010-12-02
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] 量子ドットを含む半導体マイクロチューブの作製と光学特性2010
- Author(s)
  大谷直毅, 溝口裕一朗, 吉川梨恵, 西田博貴, 赤羽浩一, 細田誠
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] 量子ドットを含む半導体マイクロチューブの作製と光学特性2010
- Author(s)
  大谷直毅, 溝口裕一朗, 吉川梨恵, 西田博貴, 赤羽浩一, 細田誠
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学湘南キャンパス(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] Optical properties of semiconductor microtubes containing quantum wells and quantum dots2010
- Author(s)
  N. Ohtani, Y. Mizoguchi, R. Yoshikawa, H. Nishida, K. Akahane, and M. Hosoda
- Organizer
  23rd General Conference of the Condensed Matter Division of the European Physical Society(CMD23)
- Place of Presentation
  ポーランド、ワルシャワ
- Year and Date
  2010-08-30
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] Optical properties of semiconductor microtubes containing quantum wells and quantum dots2010
- Author(s)
  N.Ohtani, Y.Mizoguchi, R.Yoshikawa, H.Nishida, K.Akahane, M.Hosoda
- Organizer
  23rd General Conference of the Condensed Matter Division of the European Physical Society (CMD23)
- Place of Presentation
  ポーランド、ワルシャワ大学
- Year and Date
  2010-08-30
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] Influence of the number of turns and the distortion of the shape on the optical properties of semiconductor microtubes2009
- Author(s)
  Y. Mizoguchi, S. Hiratsuka, S. Takeda, S. Saravanan, M. Hosoda, and N. Ohtani
- Organizer
  14th International Conference on Modulated Semiconductor Structures(MSS14)
- Place of Presentation
  神戸
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] 量子井戸マイクロチューブとその発光特性2009
- Author(s)
  細田誠, 溝口裕一郎, 大谷直毅
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] Influence of the number of turns and the distortion of the shape on the optical properties of semiconductor microtubes2009
- Author(s)
  Y.Mizoguchi, S.Hiratsuka, S.Takeda, S.Saravanan, M.Hosoda, N.Ohtani
- Organizer
  14th International Conference on Modulated Semiconductor Structures (MSS14)
- Place of Presentation
  神戸国際会議場(神戸)
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] Influence of number of turns and uniformity of the internal strain distribution on the optical properties in semiconductor microtubes2009
- Author(s)
  Y.Mizoguchi, H.Nishida, R.Yoshikawa, S.Saravanan, M.Hosoda, N.Ohtani
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)
- Place of Presentation
  Kaanapali, Maui, Hawaii, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] Influence of number of turns and uniformity of the internal strain distribution on the optical properties in semiconductor microtubes2009
- Author(s)
  Y. Mizoguchi, H. Nishida, R. Yoshikawa, S. Saravanan, M. Hosoda, and N. Ohtani
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology(ISANN)
- Place of Presentation
  米国ハワイ、マウイ島
- Year and Date
  2009-12-01
- Data Source
  KAKENHI-PROJECT-21560047
[Presentation] Electric field domain formation in multiple finite-superlattice systems2007
- Author(s)
  M. Hosoda S. Noma
- Organizer
  Int. Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560013
[Presentation] Electric field domain formation in multiplefinite-superlattice systems2007
- Author(s)
  M. Hosoda
- Organizer
  Int.Meeting for Future of Electron Devices, Kansai (IMFEDK 2007)
- Place of Presentation
  Osaka Japan
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560013
[Presentation] Electric field domain for mation in multiple finite-superlattice systems2007
- Author(s)
  M.Hosoda and S. Noma
- Organizer
  International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka,Japan
- Year and Date
  2007-04-24
- Data Source
  KAKENHI-PROJECT-18560013

1. AKAHANE Kouichi (50359072)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
2. OHTANI Naoki (80359067)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
3. MIZOGUCHI Kohji (10202342)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. KIM Tegi (00295685)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. NAKAYAMA Masaki (30172480)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

HOSODA Makoto 細田 誠

細田 誠 ホソダ マコト

Research Projects

Research Products

Co-Researchers

Development of high efficient semiconductor microtube-lasers containing micro-ring resonators

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Nonlinear dynamics of electric field domains in semioonductor superlatticesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Dynamics of carrier transport through the higher energy subbands in semiconductor superlatticesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Micro-probing system of coherent phenomena in THz frequency region

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Various photoluminescence properties due to Gamma-X resonance in type-I GaAs/AlAs multiple-quantum wells consisting of quantum wells with different thicknesses2008

Author(s)

Journal Title

Description

Data Source

[Journal Article] Various photoluminescence properties due to Gamma-X resonance in type-I GaAs/AIAs multiple-quantum wells consisting of quantum wells with different thicknesses2008

Author(s)

Journal Title

Description

Data Source

[Journal Article] Photoluminescence properties affected by carrier transport between X and different first excited states originating from interface imperfbction in GaAs/AIAs multiple-quantum wells2008

Author(s)

Journal Title

Description

Data Source

[Journal Article] Photoluminescence properties affected by carrier transport between X and different first excited states originating from interface imperfection in GaAs/AlAs multi-quantum wells2008

Author(s)

Journal Title

Data Source

[Journal Article] Photoluminescence properties affected by carrier transport between X and different first excited states originating from interface imperfection in GaAs/AlAs multiple^quantum wells2008

Author(s)

Journal Title

Description

Data Source

[Journal Article] Various photoluminescence properties due to Gamma-X resonance in type-I GaAs/AlAs multi-quantum wells consisting of quantum wells with different thicknesses2008

Author(s)

Journal Title

Data Source

[Journal Article] Various photoluminescence properties observed in a GaAs/AlAs asymmetric double-quantum-well superlattice2007

Author(s)

Journal Title

Data Source

[Journal Article] Various photoluminescence properties observed in a GaAs/AIAs asymmetric double-quantum-well superlattice2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Formation of electric-field domains in a system of multiple finite superlattices2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Influence of L subband states on optical and electric properties in GaAs/AlAs type-I superlattices2007

Author(s)

Journal Title

Data Source

[Journal Article] Various photoluminescence properties observed in a GaAs/AlAs asymmetric double-quantum-well superlattice2007

Author(s)

Journal Title

Description

Data Source

HOSODA Makoto 細田誠

細田誠ホソダマコト