Suzuki Toshi-kazu 鈴木寿一

… Alternative Names

SUZUKI Toshi-kazu 鈴木寿一

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Researcher Number	80362028
Other IDs
Affiliation (Current)	2025: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授
Affiliation (based on the past Project Information) *help	2022 – 2024: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 2015 – 2017: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 2014 – 2016: 北陸先端科学技術大学院大学, 学内共同利用施設等, 教授 2007: Japan Advanced Institute of Science and Technology, Center for Nano Materials and Technology, Associate Professor 2006: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助教授
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Crystal engineering / Electronic materials/Electric materials Except Principal Investigator Electron device/Electronic equipment
Keywords	Principal Investigator 分極エンジニアリング / 界面電荷エンジニアリング / 分極ドーピング / 界面固定電荷 / 閾値電圧制御 / 窒化物半導体電界効果トランジスタ / 低周波ノイズ / 低次元電子 / 異種材料融合技術 / InAs … More / 混合酸化物 / 固定電荷 / クーロン相互作用 / 低次元系 / 狭ギャップ半導体 / electron device / semiconductor physics / MBE. epitaxial / crystal growth / electronic materials / MBE、エゴタキシャル / 電子デバイス・機器 / 半導体物性 / MBE、エピタキシャル / 結晶工学 / 電子・電気材料 … More Except Principal Investigator 絶縁体-半導体界面 / 格子緩和成長 / 分子線エピタキシー / InGaAs MIS構造 / タイプIIヘテロ構造 / 化合物半導体MOSFET / スタガード型ヘテロ構造 / 化合物半導体 / ヘテロ接合 / トンネルFET Less

界面電荷・歪分極エンジニアリングの併用による窒化物半導体デバイス閾値電圧制御Principal Investigator
- Principal Investigator
  
  鈴木寿一
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Japan Advanced Institute of Science and Technology
Mid-infrared exciton control based on low-dimensional image charge effects in narrow-gap semiconductorsPrincipal Investigator
- Principal Investigator
  
  Suzuki Toshi-kazu
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Japan Advanced Institute of Science and Technology
Complementary vertical tunnel FET aiming for low voltage and high speed operation by heterostructure design and miniaturization
- Principal Investigator
  
  MIYAMOTO Yasuyuki
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Crystal growth of Sb-based compound semiconductors and jissoprocess for high-speed device circuitsPrincipal Investigator
- Principal Investigator
  
  SUZUKI Toshi-kazu
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology

All 2022 2018 2017 2016 2015 2014 2008 2007 2006 Other

All Journal Article Presentation

[Journal Article] Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics2018
- Author(s)
  S. P. Le, D. D. Nguyen, and T. Suzuki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Issue: 3 Pages: 034504-034504
- DOI
  10.1063/1.5017668
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K13348
[Journal Article] An InAs/high-k/low-k structure: electron transport and interface analysis2017
- Author(s)
  T. Ui, R. Mori, S. P. Le, Y. Oshima, and T. Suzuki.
- Journal Title
  
  AIP Advances
  
  Volume: 7 Issue: 5 Pages: 055303-055303
- DOI
  10.1063/1.4983176
- NAID
  120006584033
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26249046, KAKENHI-PROJECT-15K13348, KAKENHI-PROJECT-15H03522
[Journal Article] Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors2016
- Author(s)
  S. P. Le, T. Ui, T. Q. Nguyen, H.-A. Shih, and T. Suzuki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 119 Issue: 20
- DOI
  10.1063/1.4952386
- NAID
  120006584035
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249046, KAKENHI-PROJECT-15K13348
[Journal Article] Low-frequency noise in InAs films bonded on low-k flexible substrates2015
- Author(s)
  S. P. Le, T. Ui, and T. Suzuki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107 Issue: 19
- DOI
  10.1063/1.4935458
- NAID
  120006510328
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13348, KAKENHI-PROJECT-26249046
[Journal Article] Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices2014
- Author(s)
  H.-A. Shih, M. Kudo, and T. Suzuki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 116 Issue: 18
- DOI
  10.1063/1.4901290
- NAID
  120005650341
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26249046
[Journal Article] Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices2014
- Author(s)
  S. P. Le, T. Q. Nguyen, H.-A. Shih, M. Kudo, and T. Suzuki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 116 Issue: 5 Pages: 0545101-8
- DOI
  10.1063/1.4892486
- NAID
  120005650340
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26249046
[Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<0.89> Ga_<0.11> Sb/In_<0.88> Al_<0.12>Sb by magnetoresistance measurements2008
- Author(s)
  M.Akabori, V.A.Guzenko, T.Sato, Th.Schaepers, T.Suzuki, and S.Yamada
- Journal Title
  
  Phys.Rev.B
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Epitaxial lift-off of InGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, M. Akabori, and T. Suzuki
- Journal Title
  
  Appl. Phys. Express 1
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Epitaxial lift-off of InGaAs/lnAIAs metamorphic high electron mobility heterostructures and their vander Waals bonding on AIN ceramic substrates2008
- Author(s)
  Y.Jeong, M.Shindo, M.Akabori, and T.Suzuki
- Journal Title
  
  Appl.Phys.Express 1
  
  Pages: 21201-21201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, H. Takita, M. Akabori, and T. Suzuki
- Journal Title
  
  phys. stat. sol.(c) (in press)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<o.89>Ga_<0.11>Sb/In_<0.88>Al_<0.12>Sb by magnetoresistance measurements2008
- Author(s)
  M. Akabori, V. A. Guzenko, T. Sato, Th. Schaepers, T. Suzuki, and S. Yamada
- Journal Title
  
  Phys. Rev. B 77
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Epitaxial lift-off of hiGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, M. Akabori, T. Suzuki
- Journal Title
  
  Appl. Phys. Express vol. vol.1(referred)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Structural,optical,and electrical characterizations of epitaxial lifted-offInGaAs/lnAIAs metamorphic heterostructures bonded on AIN ceramic substrates2008
- Author(s)
  Y.Jeong, M.Shindo, H.Takita, M.Akabori, and T.Suzuki
- Journal Title
  
  phys.stat.sol.(c)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, H. Takita, M. Akabori, T. Suzuki
- Journal Title
  
  phys. stat. sol. (c) (in press)(referred)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Invalidity of graded buffers for InAs grown on GaAs(001)-a comparison between direct and graded-buffer growth2007
- Author(s)
  Y.Jeong, H.Choi, T.Suzuki
- Journal Title
  
  J. Cryst. Growth 301-302
  
  Pages: 235-239
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Invalidity of graded buffers for InAs grown on GaAs(001) a comparison between direct and graded-buffer growth2007
- Author(s)
  Y. Jeong, H. Choi, T. Suzuki
- Journal Title
  
  J.Cryst. Growth referred vol.301-302
  
  Pages: 235-239
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Invalidity of graded buffers for InAs grown on GaAs(001)-a comparison between direct and graded-buffer growth2007
- Author(s)
  Y. Jeong, H. Choi, and T. Suzuki
- Journal Title
  
  J. Cryst. Growth 301-302
  
  Pages: 235-239
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006
- Author(s)
  V. A. Guzenko, M. Akabori, Th. Schapers, S. Cabanas, T. Sato, T. Suzuki, and S. Yamada
- Journal Title
  
  phys. stet. sol.(c) 3
  
  Pages: 4227-4230
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Impurity diffusion in InGaAs Esaki tunnel diodes of varied defect densities,2006
- Author(s)
  H.Ono, S.Taniguchi, T.Suzuki
- Journal Title
  
  IEICE Trans. on Electronics E89-C
  
  Pages: 1020-1024
- NAID
  110007538781
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006
- Author(s)
  M,. Akabori, T. Sunouchi, T. Kakegawa, T. Sato, T. Suzuki, S. Yamada
- Journal Title
  
  Physica E referred vol.34
  
  Pages: 413-416
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006
- Author(s)
  V.A. Guzenko, M. Akabori, Th. Schapers, S. Cabanas, T. Sato, T. Suzuki, S. Yamada
- Journal Title
  
  phys. stat sol. (c) referred vol.3
  
  Pages: 4227-4230
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006
- Author(s)
  M.Akabori, T.Sunouchi, T.Kakegawa, T.Sato, T.Suzuki, S.Yamada
- Journal Title
  
  Physica E 34
  
  Pages: 413-416
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006
- Author(s)
  V.A.Guzenko, M.Akabori, Th.Schapers, S.Cabanas, T.Sato, T.Suzuki, S.Yamada
- Journal Title
  
  Phys. stat. sol.(c) 3
  
  Pages: 4227-4230
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Dislocation-limited electron transport in InSb grown on GaAs (001)2006
- Author(s)
  T. Sato, T. Suzuki, S. Tomiya, S. Yamada
- Journal Title
  
  Physica B referred vol.376-377
  
  Pages: 579-582
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Dislocation-limited electron transport in InSb grown on GaAs(001)2006
- Author(s)
  T. Sato, T. Suzuki, S. Tomiya, and S. Yamada
- Journal Title
  
  Physica B 376-377
  
  Pages: 579-582
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Dislocation-limited electron transport in InSb grown on GaAs(001)2006
- Author(s)
  T.Sato, T.Suzuki, S.Tomiya, S.Yamada
- Journal Title
  
  Physica B 376-377
  
  Pages: 579-582
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006
- Author(s)
  M. Akabori, T. Sunouchi, T. Kakegawa, T. Sato, T. Suzuki, and S. Yamada
- Journal Title
  
  Physica E 34
  
  Pages: 413-416
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In^<0.89>Ga^<0.11>Sb/In^<0.88>Sb by magnetoresistance measurements
- Author(s)
  M. Akabori, V.A. Guzenko, T. Sato, Th. Schaepers, T.Suzuki, S. Yamada
- Journal Title
  
  Phys. Rev. B referred vol.77
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Presentation] High-frequency and multi-probe-Hall characterizations for AlGaN/GaN heterostructures under Ohmic-metals2022
- Author(s)
  K. Uryu and T. Suzuki
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22815
[Presentation] Depletion width in AlGaN/GaN heterostructures under Ohmic-metals2022
- Author(s)
  K. Uryu and T. Suzuki
- Organizer
  54th International Conference on Solid State Devices and Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22815
[Presentation] ダブルリセス構造を有するノーマリオフ型AlGaN-GaN MOSFETのDIBL特性2018
- Author(s)
  佐藤拓, 瓜生和也, 岡安潤一, 君島正幸, 鈴木寿一
- Organizer
  電気学会電子デバイス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-15K13348
[Presentation] Threshold voltages of Al2O3/AlGaN/GaN and AlTiO/AlGaN/GaN metal-insulator-semiconductor devices2017
- Author(s)
  S. P. Le, D. D. Nguyen, and T. Suzuki
- Organizer
  49th International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13348
[Presentation] Drain-induced barrier lowering in normally-off AlGaN-GaN MOSFETs with single- or double-recess overlapped gate2017
- Author(s)
  T. Sato, K. Uryu, J. Okayasu, M. Kimishima, and T. Suzuki
- Organizer
  49th International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13348
[Presentation] Low-frequency noise exponents in InAs thin films on flexible or GaAs(001) substrates2016
- Author(s)
  S. P. Le, T. Ui, and T. Suzuki
- Organizer
  43rd International Symposium on Compound Semiconductors
- Place of Presentation
  富山国際会議場
- Year and Date
  2016-06-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Fabrication and characterization of InAs/high-k/low-k structures2016
- Author(s)
  T. Ui, R. Mori, S. P. Le, Y. Oshima, and T. Suzuki
- Organizer
  48th Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Tsukuba International Congress Center (茨城県つくば市)
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13348
[Presentation] Low-frequency noise exponents in InAs thin films on flexible or GaAs(001) substrates2016
- Author(s)
  S. P. Le, T. Ui, and T. Suzuki
- Organizer
  43rd International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama International Conference Center (富山県富山市)
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13348
[Presentation] Fabrication and characterization of InAs/high-k/low-k structures2016
- Author(s)
  T. Ui, R. Mori, S. P. Le, Y. Oshima, and T. Suzuki.
- Organizer
  48th Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  つくば国際会議場
- Year and Date
  2016-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors2015
- Author(s)
  S. P. Le, T. Ui, T. Q. Nguyen, H.-A. Shih, and T. Suzuki
- Organizer
  47th Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center
- Year and Date
  2015-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors2015
- Author(s)
  S. P. Le, T. Ui, T. Q. Nguyen, H.-A. Shih, and T. Suzuki
- Organizer
  47th Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center (北海道札幌市)
- Year and Date
  2015-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13348
[Presentation] Fabrication and characterization of AlTiO/InAlN/AlN/GaN metal-Insulator-semiconductor field-effect transistor2015
- Author(s)
  S. Yamaguchi, T. Ui, J. Liang, H.-A. Shih, and T. Suzuki
- Organizer
  47th Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center (北海道札幌市)
- Year and Date
  2015-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13348
[Presentation] Low-frequency noise of intrinsic gated region in AlN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
- Author(s)
  S. P. Le, T. Q. Nguyen, H.-A. Shih, M. Kudo, and T. Suzuki
- Organizer
  2014 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  つくば市
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-26249046

1. MIYAMOTO Yasuyuki (40209953)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. KANAZAWA Toru (40514922)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. AKABORI Masashi (50345667)

# of Collaborated Projects: 1 results

# of Collaborated Products: 15 results

Suzuki Toshi-kazu 鈴木 寿一

SUZUKI Toshi-kazu 鈴木 寿一

Research Projects

Research Products

Co-Researchers

界面電荷・歪分極エンジニアリングの併用による窒化物半導体デバイス閾値電圧制御Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Mid-infrared exciton control based on low-dimensional image charge effects in narrow-gap semiconductorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Complementary vertical tunnel FET aiming for low voltage and high speed operation by heterostructure design and miniaturization

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Crystal growth of Sb-based compound semiconductors and jissoprocess for high-speed device circuitsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] An InAs/high-k/low-k structure: electron transport and interface analysis2017

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors2016

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Low-frequency noise in InAs films bonded on low-k flexible substrates2015

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices2014

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices2014

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<0.89> Ga_<0.11> Sb/In_<0.88> Al_<0.12>Sb by magnetoresistance measurements2008

Author(s)

Journal Title

Data Source

[Journal Article] Epitaxial lift-off of InGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates2008

Author(s)

Journal Title

Description

Data Source

[Journal Article] Epitaxial lift-off of InGaAs/lnAIAs metamorphic high electron mobility heterostructures and their vander Waals bonding on AIN ceramic substrates2008

Author(s)

Journal Title

Data Source

[Journal Article] Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AIN ceramic substrates2008

Author(s)

Journal Title

Suzuki Toshi-kazu 鈴木寿一

SUZUKI Toshi-kazu 鈴木寿一